CN104903705B - 用于光瞳成像散射测量的变迹法 - Google Patents

用于光瞳成像散射测量的变迹法 Download PDF

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Publication number
CN104903705B
CN104903705B CN201380069795.5A CN201380069795A CN104903705B CN 104903705 B CN104903705 B CN 104903705B CN 201380069795 A CN201380069795 A CN 201380069795A CN 104903705 B CN104903705 B CN 104903705B
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China
Prior art keywords
illumination
apodization
field diaphragm
path
sample
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Chinese (zh)
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CN104903705A (zh
Inventor
安德鲁·W·希尔
阿姆农·玛纳森
巴拉克·布林戈尔茨
欧哈德·巴沙尔
马克·吉诺乌克
泽夫·博姆索恩
丹尼尔·坎德尔
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KLA Corp
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KLA Tencor Corp
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Priority to CN201810555453.9A priority Critical patent/CN108762006A/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/58—Optics for apodization or superresolution; Optical synthetic aperture systems
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/068—Optics, miscellaneous

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Microscoopes, Condenser (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
CN201380069795.5A 2012-11-27 2013-11-25 用于光瞳成像散射测量的变迹法 Active CN104903705B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810555453.9A CN108762006A (zh) 2012-11-27 2013-11-25 用于光瞳成像散射测量的变迹法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261730383P 2012-11-27 2012-11-27
US61/730,383 2012-11-27
US13/936,529 2013-07-08
US13/936,529 US9091650B2 (en) 2012-11-27 2013-07-08 Apodization for pupil imaging scatterometry
PCT/US2013/071715 WO2014085338A1 (en) 2012-11-27 2013-11-25 Apodization for pupil imaging scatterometry

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201810555453.9A Division CN108762006A (zh) 2012-11-27 2013-11-25 用于光瞳成像散射测量的变迹法

Publications (2)

Publication Number Publication Date
CN104903705A CN104903705A (zh) 2015-09-09
CN104903705B true CN104903705B (zh) 2018-06-26

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CN201380069795.5A Active CN104903705B (zh) 2012-11-27 2013-11-25 用于光瞳成像散射测量的变迹法
CN201810555453.9A Pending CN108762006A (zh) 2012-11-27 2013-11-25 用于光瞳成像散射测量的变迹法

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Country Status (5)

Country Link
US (2) US9091650B2 (ko)
KR (1) KR102079416B1 (ko)
CN (2) CN104903705B (ko)
TW (2) TWI683098B (ko)
WO (1) WO2014085338A1 (ko)

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US9719920B2 (en) * 2013-07-18 2017-08-01 Kla-Tencor Corporation Scatterometry system and method for generating non-overlapping and non-truncated diffraction images
US9709510B2 (en) 2014-06-26 2017-07-18 Kla-Tencor Corp. Determining a configuration for an optical element positioned in a collection aperture during wafer inspection
NL2015160A (en) * 2014-07-28 2016-07-07 Asml Netherlands Bv Illumination system, inspection apparatus including such an illumination system, inspection method and manufacturing method.
US10056224B2 (en) * 2015-08-10 2018-08-21 Kla-Tencor Corporation Method and system for edge-of-wafer inspection and review
US20170045355A1 (en) * 2015-08-12 2017-02-16 Industrial Technology Research Institute Scattering measurement system and method
US10094774B2 (en) 2015-08-12 2018-10-09 Industrial Technology Research Institute Scattering measurement system and method
JP6619883B2 (ja) 2015-12-09 2019-12-11 エーエスエムエル ホールディング エヌ．ブイ． メトロロジ装置における照明方法およびメトロロジ装置
CN108700834B (zh) 2016-03-07 2021-03-09 Asml荷兰有限公司 照射系统和量测系统
US10048132B2 (en) * 2016-07-28 2018-08-14 Kla-Tencor Corporation Simultaneous capturing of overlay signals from multiple targets
WO2018089190A1 (en) * 2016-11-09 2018-05-17 Kla-Tencor Corporation Target location in semiconductor manufacturing
CN111051992A (zh) * 2017-09-07 2020-04-21 Asml荷兰有限公司 光刻方法和设备
CN108469685B (zh) * 2018-05-17 2020-08-25 辽宁大学 一种超分辨率关联成像系统及成像方法
WO2020057900A1 (en) * 2018-09-19 2020-03-26 Asml Netherlands B.V. Metrology sensor for position metrology
US11474435B2 (en) 2018-12-20 2022-10-18 Asml Netherlands B.V. Metrology sensor, illumination system and method of generating measurement illumination with a configurable illumination spot diameter
CN109840942A (zh) * 2019-04-09 2019-06-04 上海上实龙创智慧能源科技股份有限公司 一种大型空间恒照度控制方法、平台及系统
US20240094641A1 (en) * 2020-12-10 2024-03-21 Asml Holding N.V. Intensity order difference based metrology system, lithographic apparatus, and methods thereof
US11300524B1 (en) * 2021-01-06 2022-04-12 Kla Corporation Pupil-plane beam scanning for metrology
US20230236113A1 (en) * 2022-01-25 2023-07-27 Kla Corporation Annular apodizer for small target overlay measurement

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Also Published As

Publication number Publication date
KR102079416B1 (ko) 2020-02-19
KR20150090180A (ko) 2015-08-05
CN104903705A (zh) 2015-09-09
US20140146322A1 (en) 2014-05-29
TW201428262A (zh) 2014-07-16
TWI683098B (zh) 2020-01-21
US9091650B2 (en) 2015-07-28
CN108762006A (zh) 2018-11-06
WO2014085338A1 (en) 2014-06-05
TW201920938A (zh) 2019-06-01
US9784987B2 (en) 2017-10-10
US20150316783A1 (en) 2015-11-05

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