CN104885186B - 宽离子束用的具多天线电感性耦合等离子体离子源 - Google Patents

宽离子束用的具多天线电感性耦合等离子体离子源 Download PDF

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Publication number
CN104885186B
CN104885186B CN201380049073.3A CN201380049073A CN104885186B CN 104885186 B CN104885186 B CN 104885186B CN 201380049073 A CN201380049073 A CN 201380049073A CN 104885186 B CN104885186 B CN 104885186B
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CN
China
Prior art keywords
radio frequency
ion beam
source
frequency
windows
Prior art date
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CN201380049073.3A
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English (en)
Chinese (zh)
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CN104885186A (zh
Inventor
科斯特尔·拜洛
约瑟·C·欧尔森
艾德沃·W·比尔
玛尼·斯尔达斯奇
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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Publication of CN104885186A publication Critical patent/CN104885186A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/0817—Microwaves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
CN201380049073.3A 2012-08-13 2013-08-08 宽离子束用的具多天线电感性耦合等离子体离子源 Active CN104885186B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261682356P 2012-08-13 2012-08-13
US61/682,356 2012-08-13
US13/961,060 2013-08-07
US13/961,060 US8809803B2 (en) 2012-08-13 2013-08-07 Inductively coupled plasma ion source with multiple antennas for wide ion beam
PCT/US2013/054056 WO2014028290A1 (en) 2012-08-13 2013-08-08 Inductively coupled plasma ion source with multiple antennas for wide ion beam

Publications (2)

Publication Number Publication Date
CN104885186A CN104885186A (zh) 2015-09-02
CN104885186B true CN104885186B (zh) 2017-03-08

Family

ID=50065489

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380049073.3A Active CN104885186B (zh) 2012-08-13 2013-08-08 宽离子束用的具多天线电感性耦合等离子体离子源

Country Status (6)

Country Link
US (1) US8809803B2 (https=)
JP (1) JP5832708B2 (https=)
KR (1) KR101615671B1 (https=)
CN (1) CN104885186B (https=)
TW (1) TWI513375B (https=)
WO (1) WO2014028290A1 (https=)

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JP5617817B2 (ja) * 2011-10-27 2014-11-05 パナソニック株式会社 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法
US9384937B2 (en) * 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter
US9642014B2 (en) * 2014-06-09 2017-05-02 Nokomis, Inc. Non-contact electromagnetic illuminated detection of part anomalies for cyber physical security
US9613777B2 (en) 2014-09-11 2017-04-04 Varian Semiconductor Equipment Associates, Inc. Uniformity control using adjustable internal antennas
KR101798371B1 (ko) * 2016-04-27 2017-11-16 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 가스공급구조
KR101798384B1 (ko) * 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 rf 안테나 구조
KR101798373B1 (ko) * 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창 지지구조
KR101798376B1 (ko) * 2016-05-04 2017-12-12 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창
KR101798374B1 (ko) * 2016-05-04 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창의 지지구조
GB201806783D0 (en) * 2018-04-25 2018-06-06 Spts Technologies Ltd A plasma generating arrangement
EP3748374B8 (en) 2019-06-06 2023-02-15 Rohde & Schwarz GmbH & Co. KG System and method for calibrating radio frequency test chambers

Citations (3)

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Publication number Priority date Publication date Assignee Title
EP0756309A1 (en) * 1995-07-26 1997-01-29 Applied Materials, Inc. Plasma systems for processing substrates
US20100066252A1 (en) * 2008-04-18 2010-03-18 The Regents Of The University Of California Spiral rf-induction antenna based ion source for neutron generators
CN102449739A (zh) * 2009-04-16 2012-05-09 瓦里安半导体设备公司 宽带离子束产生与控制用的共轭icp与ecr等离子源

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KR100302167B1 (ko) 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5824606A (en) 1996-03-29 1998-10-20 Lam Research Corporation Methods and apparatuses for controlling phase difference in plasma processing systems
JP2001023532A (ja) 1999-07-09 2001-01-26 Nissin Electric Co Ltd イオン源の制御方法およびイオンドーピング装置
JP2001042099A (ja) 1999-07-28 2001-02-16 Toshiba Corp 高周波負イオン源
US6451161B1 (en) * 2000-04-10 2002-09-17 Nano-Architect Research Corporation Method and apparatus for generating high-density uniform plasma
EP1753011B1 (de) 2005-08-13 2012-10-03 HÜTTINGER Elektronik GmbH + Co. KG Verfahren zur Erzeugung von Ansteuersignalen für HF-Leistungsgeneratoren
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JP5125447B2 (ja) * 2007-11-27 2013-01-23 株式会社島津製作所 イオンビーム処理装置
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Publication number Priority date Publication date Assignee Title
EP0756309A1 (en) * 1995-07-26 1997-01-29 Applied Materials, Inc. Plasma systems for processing substrates
US20100066252A1 (en) * 2008-04-18 2010-03-18 The Regents Of The University Of California Spiral rf-induction antenna based ion source for neutron generators
CN102449739A (zh) * 2009-04-16 2012-05-09 瓦里安半导体设备公司 宽带离子束产生与控制用的共轭icp与ecr等离子源

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
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An Array of Inductively Coupled Plasma Sources for Large Area Plasma;Park, et al.;《Thin Solid Films》;19991101;第355-356卷;252页右栏第二段至253页右栏第二端，附图1 *

Also Published As

Publication number Publication date
JP2015524607A (ja) 2015-08-24
KR101615671B1 (ko) 2016-04-26
US8809803B2 (en) 2014-08-19
JP5832708B2 (ja) 2015-12-16
TWI513375B (zh) 2015-12-11
CN104885186A (zh) 2015-09-02
US20140042337A1 (en) 2014-02-13
TW201408141A (zh) 2014-02-16
KR20150042260A (ko) 2015-04-20
WO2014028290A1 (en) 2014-02-20

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