CN104835732B - 选择性地抛光碳化硅膜的方法 - Google Patents

选择性地抛光碳化硅膜的方法 Download PDF

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Publication number
CN104835732B
CN104835732B CN201510122961.4A CN201510122961A CN104835732B CN 104835732 B CN104835732 B CN 104835732B CN 201510122961 A CN201510122961 A CN 201510122961A CN 104835732 B CN104835732 B CN 104835732B
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CN
China
Prior art keywords
silica
acid
silicon carbide
polishing
composition
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CN201510122961.4A
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English (en)
Chinese (zh)
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CN104835732A (zh
Inventor
W.沃德
T.约翰斯
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CMC Materials LLC
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Cabot Microelectronics Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201510122961.4A 2008-12-04 2009-12-04 选择性地抛光碳化硅膜的方法 Active CN104835732B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US20081208P 2008-12-04 2008-12-04
US61/200,812 2008-12-04
US12/630,288 US9548211B2 (en) 2008-12-04 2009-12-03 Method to selectively polish silicon carbide films
US12/630,288 2009-12-03
CN2009801551460A CN102292190A (zh) 2008-12-04 2009-12-04 选择性地抛光碳化硅膜的方法

Related Parent Applications (1)

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CN2009801551460A Division CN102292190A (zh) 2008-12-04 2009-12-04 选择性地抛光碳化硅膜的方法

Publications (2)

Publication Number Publication Date
CN104835732A CN104835732A (zh) 2015-08-12
CN104835732B true CN104835732B (zh) 2017-11-14

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CN201510122961.4A Active CN104835732B (zh) 2008-12-04 2009-12-04 选择性地抛光碳化硅膜的方法
CN2009801551460A Pending CN102292190A (zh) 2008-12-04 2009-12-04 选择性地抛光碳化硅膜的方法

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Country Status (9)

Country Link
US (1) US9548211B2 (enExample)
EP (1) EP2384258B1 (enExample)
JP (1) JP5491520B2 (enExample)
KR (1) KR101671042B1 (enExample)
CN (2) CN104835732B (enExample)
MY (1) MY153077A (enExample)
SG (1) SG171909A1 (enExample)
TW (1) TWI398918B (enExample)
WO (1) WO2010065125A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010013519B4 (de) * 2010-03-31 2012-12-27 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
JP5695367B2 (ja) * 2010-08-23 2015-04-01 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US8497210B2 (en) * 2010-10-04 2013-07-30 International Business Machines Corporation Shallow trench isolation chemical mechanical planarization
CN102172851B (zh) * 2011-03-03 2013-03-27 李子恒 等离子脱膜抛光机
US8999193B2 (en) 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
CN103387796B (zh) * 2012-05-10 2015-08-12 气体产品与化学公司 具有化学添加剂的化学机械抛光组合物及其使用方法
JP6106419B2 (ja) * 2012-12-12 2017-03-29 昭和電工株式会社 ＳｉＣ基板の製造方法
US9803109B2 (en) 2015-02-03 2017-10-31 Cabot Microelectronics Corporation CMP composition for silicon nitride removal
US9944829B2 (en) * 2015-12-03 2018-04-17 Treliant Fang Halite salts as silicon carbide etchants for enhancing CMP material removal rate for SiC wafer
KR102462501B1 (ko) 2016-01-15 2022-11-02 삼성전자주식회사 슬러리 조성물을 이용하는 집적회로 소자의 제조 방법
US10294399B2 (en) * 2017-01-05 2019-05-21 Cabot Microelectronics Corporation Composition and method for polishing silicon carbide
CN110997856B (zh) * 2017-08-09 2021-10-29 昭和电工材料株式会社 研磨液和研磨方法
US11931855B2 (en) * 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
CN114621683A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
CN114407547B (zh) * 2021-12-29 2023-03-07 江苏泰佳新材料科技有限公司 一种耐水洗防伪烫印膜及其制备方法
US20250376604A1 (en) * 2024-06-05 2025-12-11 Entegris, Inc. Silica-based slurry for selective polishing of silicon nitride and silicon carbide

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1248994A (zh) * 1996-12-30 2000-03-29 卡伯特公司 用于氧化物cmp的组合物
CN101263583A (zh) * 2005-09-09 2008-09-10 旭硝子株式会社 研磨剂、被研磨面的研磨方法及半导体集成电路装置的制造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US20030139069A1 (en) * 2001-12-06 2003-07-24 Block Kelly H. Planarization of silicon carbide hardmask material
JP3748410B2 (ja) * 2001-12-27 2006-02-22 株式会社東芝 研磨方法及び半導体装置の製造方法
DE10205280C1 (de) * 2002-02-07 2003-07-03 Degussa Dispersion zum chemisch-mechanischen Polieren
CN100336179C (zh) * 2002-04-30 2007-09-05 日立化成工业株式会社 研磨液及研磨方法
US7101832B2 (en) * 2003-06-19 2006-09-05 Johnsondiversey, Inc. Cleaners containing peroxide bleaching agents for cleaning paper making equipment and method
US7018560B2 (en) 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7300603B2 (en) * 2003-08-05 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers
JP2007533141A (ja) * 2004-04-08 2007-11-15 トゥー‐シックス・インコーポレイテッド コロイド状研磨材と組み合わせて過酸化水素またはオゾン化水溶液を用いたＳｉＣ表面の化学機械的研磨
US20070037892A1 (en) * 2004-09-08 2007-02-15 Irina Belov Aqueous slurry containing metallate-modified silica particles
US20070218811A1 (en) 2004-09-27 2007-09-20 Hitachi Chemical Co., Ltd. Cmp polishing slurry and method of polishing substrate
US7563383B2 (en) * 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7803203B2 (en) * 2005-09-26 2010-09-28 Cabot Microelectronics Corporation Compositions and methods for CMP of semiconductor materials
JP2007123759A (ja) * 2005-10-31 2007-05-17 Nitta Haas Inc 半導体研磨用組成物および研磨方法
JP2007157841A (ja) * 2005-12-01 2007-06-21 Toshiba Corp Ｃｍｐ用水系分散液、研磨方法、および半導体装置の製造方法
US7781388B2 (en) * 2006-05-04 2010-08-24 American Sterilizer Company Cleaning compositions for hard to remove organic material
US7678700B2 (en) * 2006-09-05 2010-03-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
JP4523935B2 (ja) * 2006-12-27 2010-08-11 昭和電工株式会社 炭化珪素単結晶基板の研磨用水系研磨スラリー及び研磨法。
US20090269923A1 (en) * 2008-04-25 2009-10-29 Lee Sang M Adhesion and electromigration improvement between dielectric and conductive layers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1248994A (zh) * 1996-12-30 2000-03-29 卡伯特公司 用于氧化物cmp的组合物
CN101263583A (zh) * 2005-09-09 2008-09-10 旭硝子株式会社 研磨剂、被研磨面的研磨方法及半导体集成电路装置的制造方法

Also Published As

Publication number Publication date
CN104835732A (zh) 2015-08-12
MY153077A (en) 2014-12-31
EP2384258A1 (en) 2011-11-09
JP5491520B2 (ja) 2014-05-14
KR20110106864A (ko) 2011-09-29
SG171909A1 (en) 2011-07-28
TWI398918B (zh) 2013-06-11
JP2012511251A (ja) 2012-05-17
TW201030832A (en) 2010-08-16
CN102292190A (zh) 2011-12-21
EP2384258A4 (en) 2012-07-18
WO2010065125A1 (en) 2010-06-10
KR101671042B1 (ko) 2016-10-31
EP2384258B1 (en) 2016-11-23
US20100144149A1 (en) 2010-06-10
US9548211B2 (en) 2017-01-17

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