CN104831251B - 一种对衬底进行处理的方法 - Google Patents

一种对衬底进行处理的方法 Download PDF

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Publication number
CN104831251B
CN104831251B CN201510065284.7A CN201510065284A CN104831251B CN 104831251 B CN104831251 B CN 104831251B CN 201510065284 A CN201510065284 A CN 201510065284A CN 104831251 B CN104831251 B CN 104831251B
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CN
China
Prior art keywords
substrate
cooling gas
gas
substrate support
pvd
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CN201510065284.7A
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English (en)
Chinese (zh)
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CN104831251A (zh
Inventor
安东尼·P·威尔比
斯蒂芬·R·伯吉斯
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SPTS Technologies Ltd
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SPTS Technologies Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07131—Means for applying material, e.g. for deposition or forming coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201510065284.7A 2014-02-07 2015-02-06 一种对衬底进行处理的方法 Active CN104831251B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1402126.5A GB201402126D0 (en) 2014-02-07 2014-02-07 Method of processing a substrate
GB1402126.5 2014-02-07

Publications (2)

Publication Number Publication Date
CN104831251A CN104831251A (zh) 2015-08-12
CN104831251B true CN104831251B (zh) 2020-08-14

Family

ID=50390621

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510065284.7A Active CN104831251B (zh) 2014-02-07 2015-02-06 一种对衬底进行处理的方法

Country Status (7)

Country Link
US (1) US20150225841A1 (https=)
EP (1) EP2905354B1 (https=)
JP (1) JP2015163736A (https=)
KR (2) KR20150093622A (https=)
CN (1) CN104831251B (https=)
GB (1) GB201402126D0 (https=)
TW (1) TWI661068B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6877133B2 (ja) * 2016-03-28 2021-05-26 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US20180148835A1 (en) 2016-11-29 2018-05-31 Lam Research Corporation Substrate support with varying depths of areas between mesas and corresponding temperature dependent method of fabricating
US10748986B2 (en) 2017-11-21 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device with capacitors

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000355766A (ja) * 1999-06-15 2000-12-26 Hitachi Kokusai Electric Inc 基板処理装置及び基板処理方法
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
CN201006893Y (zh) * 2006-08-28 2008-01-16 深圳豪威真空光电子股份有限公司 基片冷却装置
CN102760679A (zh) * 2011-04-28 2012-10-31 佳能安内华股份有限公司 基板托架以及使用了该托架的基板处理装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
JPS6074626A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd ウエハー処理方法及び装置
JP2671835B2 (ja) * 1994-10-20 1997-11-05 日本電気株式会社 スパッタ装置とその装置を用いた半導体装置の製造方法
US8002463B2 (en) * 2008-06-13 2011-08-23 Asm International N.V. Method and device for determining the temperature of a substrate
US9340865B2 (en) * 2010-01-26 2016-05-17 Panasonic Intellectual Property Management Co., Ltd. Thin film-manufacturing apparatus,thin film-manufacturing method,and substrate-conveying roller
TWI506719B (zh) * 2011-11-08 2015-11-01 因特瓦克公司 基板處理系統及方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000355766A (ja) * 1999-06-15 2000-12-26 Hitachi Kokusai Electric Inc 基板処理装置及び基板処理方法
US20030168174A1 (en) * 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
CN201006893Y (zh) * 2006-08-28 2008-01-16 深圳豪威真空光电子股份有限公司 基片冷却装置
CN102760679A (zh) * 2011-04-28 2012-10-31 佳能安内华股份有限公司 基板托架以及使用了该托架的基板处理装置

Also Published As

Publication number Publication date
EP2905354A1 (en) 2015-08-12
JP2015163736A (ja) 2015-09-10
TWI661068B (zh) 2019-06-01
KR102352695B1 (ko) 2022-01-17
CN104831251A (zh) 2015-08-12
GB201402126D0 (en) 2014-03-26
KR20210118797A (ko) 2021-10-01
EP2905354B1 (en) 2021-09-15
US20150225841A1 (en) 2015-08-13
KR20150093622A (ko) 2015-08-18
TW201538770A (zh) 2015-10-16

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