CN104821368A - Flip LED packaging structure - Google Patents
Flip LED packaging structure Download PDFInfo
- Publication number
- CN104821368A CN104821368A CN201510272613.5A CN201510272613A CN104821368A CN 104821368 A CN104821368 A CN 104821368A CN 201510272613 A CN201510272613 A CN 201510272613A CN 104821368 A CN104821368 A CN 104821368A
- Authority
- CN
- China
- Prior art keywords
- substrate
- chip
- flip led
- capsule
- encapsulating structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
A flip LED packaging structure comprises an insulation plastic body and conductive capsules dispersed in the insulation plastic body. Each conductive capsule comprises an insulation capsule skin and conductive powers being wrapped in the insulation capsule skin. Conductive substance is filled between chip electrodes and a substrate to enable the chip electrodes and the substrate to form electric connection, which is more reliable than electric connection formed by single conductive particles; and insulating property between the conductive capsules is not influenced by the content of the conductive capsules, and the content is easy to control.
Description
Technical field
The present invention relates to a kind of LED encapsulation structure, particularly a kind of encapsulating structure of flip LED.
Background technology
Light-emitting diode (Light Emitting Diode), abbreviation LED is a kind of can be the solid-state semiconductor device of visible ray by electric energy conversion.As new and effective solid light source, semiconductor lighting has the remarkable advantages such as life-span length, energy-saving and environmental protection, safety, extensive use and illumination, display, signal lamp field.The main formal dress of existing LED encapsulation structure, upside-down mounting with vertical three kinds, wherein flip-chip packaged day by day becomes the main flow of lighting field LED with its excellent conductivity and thermal diffusivity.Traditional flip-chip packaged need by the salient point of chip surface by welding system welding and substrate, the control of salient point and substrate distance and levelness directly has influence on the welding quality of chip, apart from excessive, weld and easily cause rosin joint, apart from too small, weld and easily cause short circuit, levelness difference easily causes missing solder.Again because traditional flip LED welding system equipment cannot the quality of detection chip welding quality, cause flip-chip packaged LED yield low.
For overcoming the problem of Conventional flip LED, prior art different direction conducting resinl replaces the welding procedure in Conventional flip LED process.Described different direction conducting resinl is mixed by insulative glue and metallic, by controlling the content of metallic, is distributed in insulative glue with making metallic uniform intervals.First on base plate for packaging, apply described different direction conducting resinl during encapsulation, then chip is compressed on the substrate, after the glue solidifies, chip is fixed on substantially.At this moment, the chien shih that vertical direction upper part metallic is crimped to chip electrode and substrate is electrically connected, and in horizontal direction, other metallics are isolated and opposing insulation owing to there being insulative glue.Adopt this different direction conducting resinl Problems existing: 1, control conducting particles ratio difficulty large, when conducting particles ratio is too much, the short circuit of electrode horizontal direction may be caused; When conducting particles ratio is very few, may cause clamping less than metallic between chip electrode and substrate.2, be electrically connected unreliable, because the conducting particles clamped random in the process that it relies on chip to compress conducts electricity, expand with heat and contract with cold in LED use procedure, when the distance between chip electrode and substrate changes, easily cause resistance sharply to increase or open circuit.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides a kind of encapsulating structure of flip LED.
The present invention solves the technological means that its technical problem adopts: the conducting resinl comprising flip-chip, substrate and be fixed on by flip-chip on substrate, the conduction capsule that described conducting resinl comprises insulation colloid and is dispersed in described insulation colloid, the conductive powder body that described conduction capsule comprises insulation capsule skin and is wrapped in described insulation capsule skin, be crimped to the conduction capsules break between chip electrode and substrate, conductive powder body is diffused in the insulation colloid between chip electrode with substrate and is electrically connected chip electrode and substrate.。
The invention has the beneficial effects as follows: owing to comprising the conduction capsule being wrapped up in conductive powder body by insulation capsule suitcase in conducting resinl of the present invention, when conduction capsule core plate electrode and substrate press to a certain degree, insulation capsule skin breaks, be full of conductive powder body between chip electrode with substrate and formed and be electrically connected, more reliable than the electrical connection of single conductive particle; Continue to keep insulating due to the existence of the capsule skin that insulate between conduction capsule outside chip electrode and substrate, by the impact that conduction capsule content is how many, conduction capsule content controls easily.
As a further improvement on the present invention, described conductive powder body is silver powder, and it has good conductivity and the diffusivity in insulation colloid.
Improve further as the present invention, described insulation capsule skin is organosilicon impregnated membranes.
Improve further as the present invention, described insulation capsule skin is polyacetals modified organic silicon impregnated membranes, and its anti-pressure ability is poor, easily breaks at pressurized, is conducive to conductive powder body diffusion.
Improve further as the present invention, the diameter of described insulation capsule skin is 4-10 micron, breaks when being pressed to the 30%-60% of original diameter.
Improve further as the present invention, the diameter of described insulation capsule skin is 5 microns, breaks when being pressed to 2 ~ 3 microns.
Improve further as the present invention, the material of described insulation colloid is silica gel or epoxy resin.
Improve further as the present invention, the material of described insulation colloid also comprises aluminium hydroxide.
Improve further as the present invention, the distance between described chip electrode and substrate is 2 ~ 30um.
Accompanying drawing explanation
Fig. 1 is the encapsulating structure schematic diagram of flip LED of the present invention;
Fig. 2 is the partial enlarged drawing of Fig. 1;
Fig. 3 the present invention is insulated colloid and conduction capsule admixture schematic diagram;
Fig. 4 is that the structural representation of capsule is conducted electricity in the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further detailed explanation.
With reference to figure 1, the insulation colloid 1 comprising flip-chip 3, substrate 4 and flip-chip 4 is fixed on substrate 4, doped with conduction capsule 2 in described insulation colloid 1, the conductive powder body 22 that described conduction capsule 2 comprises insulation capsule skin 21 and is wrapped in described insulation capsule skin, the conduction capsule 2 be crimped between chip 3 electrode and substrate 4 breaks, and conductive powder body 22 is diffused in chip 4 electrode and is electrically connected with substrate 4 with making chip 3 electrode in the insulation colloid 1 between substrate 4.
Described insulation colloid 1 is the good thermoset plastics of the thermal conductivity such as silica gel or epoxy resin, is the setting rate promoting thermoset plastics, also can mix the alumag of trace in conducting resinl.The effect of insulation colloid 1 is chip 3 to be fixed on substrate 4, is also heat-conduction medium heat being passed to substrate from chip simultaneously.
As shown in Figure 2, it is outer is insulation capsule skin 21 to described conduction capsule 2, and the coated conductive materials 22 of insulation capsule skin 21 is conductive powder body, as silver powder, bronze or copper powder.Described insulation capsule skin 21 is that ductility is poor, the crackly material of pressurized, and as machine silicon impregnated membranes or polyacetals modified organic silicon impregnated membranes, it is depressed into certain proportion and breaks as during 30%-60%.Described conductive materials 22 can rapid diffusion after mixing with described insulation colloid 1.As preferrred embodiment of the present invention, the diameter of described insulation capsule skin 21 is 4-10 micron, breaks when being pressed to the 30%-60% of original diameter, and can ensure that chip electrode and substrate distance are comparatively near like this, chip electrical connects reliably, and heat conduction is good.For achieving the above object, optimum execution mode is the diameter of described insulation capsule skin 21 is 5 microns, breaks when being pressed to 2 ~ 3 microns.
With reference to figure 3 and Fig. 4, the present invention is used to carry out the processing step encapsulated:
1) conduction capsule 2 is evenly spread in the good insulation colloid 1 of thermal conductivity;
2) described insulation colloid 1 is dropped on base plate for packaging 4, then the electrode position on the electrode of described upside-down mounting LED chip 3 alignment substrate 4 is placed;
3) use pressing machine to press described upside-down mounting LED chip 3, apply voltage simultaneously at described base plate for packaging 4 positive and negative electrode, when the conducting of described upside-down mounting LED chip 3, and when reaching specified current flow, described pressing machine stops pressing;
4) be heating and curing described insulation colloid 1.
In the 3rd of above-mentioned technological process) in, because the partially conductive capsule 2 in insulation colloid 1 is crimped between electrode 31 and substrate 4, when chip 3 continuing exert pressure to time to a certain degree, the insulation capsule skin 21 of described electric capsule 2 breaks, conductive materials 22 in insulation capsule skin 21 is released, be diffused between electrode 31 and substrate 4, electrode 31 is electrically connected with substrate 4.In the starting stage of current lead-through, because conductive materials 22 is not very tight, resistance is larger; After continuing to exert pressure, conductive materials 22 becomes tight, and resistance reduces, and electric current increases gradually.The conduction capsule 2 of leading material 22 is wrapped up by insulation capsule skin 21 owing to comprising in insulation colloid 1 of the present invention, when conduction capsule 2 is clamped to a certain extent by chip electrode 3 and substrate 4, insulation capsule skin 21 breaks, be full of between chip electrode 3 with substrate 4 to lead material 22 and formed and be electrically connected, more reliable than the electrical connection of single conductive particle; Continue to keep insulating due to the existence of the capsule skin 21 that insulate between conduction capsule 2 outside chip electrode 3 and substrate 4, by the impact that conduction capsule 2 content is how many, conduction capsule 2 content controls easily.
Claims (9)
1. the encapsulating structure of a flip LED, it is characterized in that: the insulation colloid comprising flip-chip, substrate and flip-chip is fixed on substrate, doped with conduction capsule in described insulation colloid, the conductive powder body that described conduction capsule comprises insulation capsule skin and is wrapped in described insulation capsule skin, be crimped to the conduction capsules break between chip electrode and substrate, conductive powder body is diffused in the insulation colloid between chip electrode with substrate and chip electrode is electrically connected with substrate.
2. the encapsulating structure of a kind of flip LED according to claim 1, is characterized in that: described conductive powder body is silver powder.
3. the encapsulating structure of a kind of flip LED according to claim 1, is characterized in that: described insulation capsule skin is organosilicon impregnated membranes.
4. the encapsulating structure of a kind of flip LED according to claim 3, is characterized in that: described insulation capsule skin is polyacetals modified organic silicon impregnated membranes.
5. the encapsulating structure of a kind of flip LED according to claim 1, is characterized in that: the diameter of described insulation capsule skin is 4-10 micron, breaks when being pressed to the 30%-60% of original diameter.
6. the encapsulating structure of a kind of flip LED according to claim 5, is characterized in that: the diameter of described insulation capsule skin is 5 microns, breaks when being pressed to 2 ~ 3 microns.
7. the encapsulating structure of a kind of flip LED according to claim 1, is characterized in that: the material of described insulation colloid is silica gel or epoxy resin.
8. the encapsulating structure of a kind of flip LED according to claim 7, is characterized in that: the material of described insulation colloid also comprises aluminium hydroxide.
9. the encapsulating structure of a kind of flip LED according to claim 1, is characterized in that: the distance between described chip electrode and substrate is 2 ~ 30um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510272613.5A CN104821368A (en) | 2015-05-25 | 2015-05-25 | Flip LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510272613.5A CN104821368A (en) | 2015-05-25 | 2015-05-25 | Flip LED packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104821368A true CN104821368A (en) | 2015-08-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510272613.5A Pending CN104821368A (en) | 2015-05-25 | 2015-05-25 | Flip LED packaging structure |
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| Country | Link |
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| CN (1) | CN104821368A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204395A (en) * | 2016-03-16 | 2017-09-26 | 晶元光电股份有限公司 | Semiconductor device and its manufacture method |
| CN108172605A (en) * | 2018-01-03 | 2018-06-15 | 京东方科技集团股份有限公司 | Organic Light Emitting Diode substrate and preparation method thereof, display panel |
| CN111370315A (en) * | 2018-12-25 | 2020-07-03 | 海太半导体（无锡）有限公司 | Method for welding flip chip and substrate by using thermosetting conductive adhesive |
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| EP0512546A1 (en) * | 1991-05-07 | 1992-11-11 | Nec Corporation | Anisotropically conductive material and method for connecting integrated circuits by using the same |
| CN1471179A (en) * | 2002-07-05 | 2004-01-28 | ��ķ�ɷ�����˾ | Semiconductor luminescent device |
| CN102821543A (en) * | 2012-08-13 | 2012-12-12 | 广东欧珀移动通信有限公司 | Printed circuit board laminating structure and laminating method |
| CN104059586A (en) * | 2014-07-17 | 2014-09-24 | 李倩楠 | Resistivity-variable conductive adhesive |
| CN204596839U (en) * | 2015-05-25 | 2015-08-26 | 叶志伟 | A kind of encapsulating structure of flip LED |
-
2015
- 2015-05-25 CN CN201510272613.5A patent/CN104821368A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP0512546A1 (en) * | 1991-05-07 | 1992-11-11 | Nec Corporation | Anisotropically conductive material and method for connecting integrated circuits by using the same |
| CN1471179A (en) * | 2002-07-05 | 2004-01-28 | ��ķ�ɷ�����˾ | Semiconductor luminescent device |
| CN102821543A (en) * | 2012-08-13 | 2012-12-12 | 广东欧珀移动通信有限公司 | Printed circuit board laminating structure and laminating method |
| CN104059586A (en) * | 2014-07-17 | 2014-09-24 | 李倩楠 | Resistivity-variable conductive adhesive |
| CN204596839U (en) * | 2015-05-25 | 2015-08-26 | 叶志伟 | A kind of encapsulating structure of flip LED |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204395A (en) * | 2016-03-16 | 2017-09-26 | 晶元光电股份有限公司 | Semiconductor device and its manufacture method |
| CN107204395B (en) * | 2016-03-16 | 2021-02-05 | 晶元光电股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN108172605A (en) * | 2018-01-03 | 2018-06-15 | 京东方科技集团股份有限公司 | Organic Light Emitting Diode substrate and preparation method thereof, display panel |
| US10586940B2 (en) | 2018-01-03 | 2020-03-10 | Boe Technology Group Co., Ltd. | Organic light emitting diode substrate and preparation method thereof, and display panel |
| CN108172605B (en) * | 2018-01-03 | 2020-11-03 | 京东方科技集团股份有限公司 | Organic light emitting diode substrate, preparation method thereof and display panel |
| US10991902B2 (en) | 2018-01-03 | 2021-04-27 | Boe Technology Group Co., Ltd. | Organic light emitting diode substrate and preparation method thereof, and display panel |
| CN111370315A (en) * | 2018-12-25 | 2020-07-03 | 海太半导体（无锡）有限公司 | Method for welding flip chip and substrate by using thermosetting conductive adhesive |
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| EXSB | Decision made by sipo to initiate substantive examination | ||
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| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20150805 |