CN103137831A - Light-emitting diode (LED) lamp and encapsulation method thereof - Google Patents
Light-emitting diode (LED) lamp and encapsulation method thereof Download PDFInfo
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- CN103137831A CN103137831A CN2013100553537A CN201310055353A CN103137831A CN 103137831 A CN103137831 A CN 103137831A CN 2013100553537 A CN2013100553537 A CN 2013100553537A CN 201310055353 A CN201310055353 A CN 201310055353A CN 103137831 A CN103137831 A CN 103137831A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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Abstract
The invention provides a light-emitting diode (LED) lamp and an encapsulation method of the LED lamp and belongs to the field of optical illumination. The LED lamp comprises a support, at least one LED chip which is arranged above the support, and encapsulation materials which cover the LED chip. A first metal coating and a second metal coating are respectively arranged on the surface between the support and the LED chip. A bonding layer is formed by sintered sliver in a sintering manner between the first metal coating and the second metal coating. Products after the sintered sliver is sintered are regarded as the bonding layer, a metal connection among the first metal coating, the bonding layer and the second metal coating is completed through the sintering of sintered silver at a high temperature so that heat transmission by metal atoms from the LED chip to the support is achieved, Ag-Ag particles are used for the connection inside the bonding layer, and therefore, heat conduction inside the bonding layer is diffused through the Ag-Ag particles. Compared with a traditional silver colloid, the LED lamp has high heat transmission rate and is beneficial for the dissipation of the chip heat.
Description
Technical field
The invention belongs to the illumination optical field, relate in particular to a kind of LED lamp and method for packing thereof.
Background technology
At the LED(light-emitting diode) encapsulation field, the die bond technology is one of its crucial technology.The quality of die bond quality will have influence on stability, thermal diffusivity and light efficiency of LED etc.According to the size of LED power and the difference of packaging technology, the die bond mode of selection is also different.General, low-power LED uses the insulating cement fixed chip, conducts heat by electrode pin; The LED that power is slightly large can use elargol or the bonding heat radiation of silica gel; Usually use the mode fixed chip heat radiation of high heat conduction elargol or eutectic technology for more powerful LED.
Elargol or high heat conduction elargol for present use, contain a certain amount of matrix resin in colloid after baking, bonding effect by matrix resin combines the Ag particle, forms conduction, thermal conducting path, realizes that LED chip is connected with conduction, the heat conduction of support.In elargol, the existence of matrix resin has had a strong impact on its heat conductivility and mechanical strength just.Simultaneously, the present elargol that uses is larger to Optical Absorption, causes light efficiency to descend.
For the eutectic technology of high-capacity LED, have that mechanical strength is high, thermal resistance is little, a good stability, high reliability, but equipment cost is high, technology difficulty is large, rate of finished products is low, and wafer/support thickness of coating and planarization are had relatively high expectations, and product voidage height is its difficult point.Therefore, the heat dissipation problem of high-capacity LED lamp remains further to be solved.
Summary of the invention
Technical problem to be solved by this invention is the heat dissipation problem for existing high-capacity LED lamp, and a kind of LED lamp is provided.
The present invention solves the problems of the technologies described above the technical scheme that adopts to be: a kind of LED lamp is provided, comprise support, be located at least one LED chip of described support top and the encapsulating material that coats described LED chip, in between the described support surface relative with described LED chip, be respectively arranged with first coat of metal and second coat of metal, between described first coat of metal and described second coat of metal, adopt sintering silver to consist of a tack coat by the mode of sintering.
Further, described tack coat has percentage by weight more than or equal to 99% argent.
Further, described first coat of metal is proof gold coating or fine silver coating.
Further, described second coat of metal is proof gold coating or fine silver coating.
Further, the surface that described LED chip is relative with described support is the reverse side of LED chip, and described second coat of metal is arranged on the reverse side of LED chip.
further, the surface that described LED chip is relative with described support is the front of LED chip, described second coat of metal comprises the anodal coating on the positive pole in the front that is arranged on LED chip and is arranged on negative pole coating on the negative pole in front of LED chip, described anodal coating and the interval setting of described negative pole coating, described first coat of metal comprises the first support coating and the second support coating of space, described tack coat comprise be connected in the first tack coat between described anodal coating and described the first support coating and be connected in described negative pole coating and described the second support coating between the second adhesive linkage.
LED lamp provided by the invention, it utilizes the product after sintering silver sintering to be connected in first coat of metal and second coat of metal between the described support surface relative with LED chip as tack coat, complete first coat of metal by the sintering of sintering silver in high temperature, metal between tack coat and the second coat of metal three connects, thereby realize that LED chip conducts heat to the metallic atom of support, because the connection of adhesives inside no longer relies on the macromolecule organic additive, but Ag-Ag particle, the conduction of the heat of this tack coat inside is by the diffusion of Ag-Ag particle thus, with respect to traditional elargol, has higher thermal conductivity, it is second coat of metal of metal material that the heat that LED chip produces passes through entirely, adhesives and first coat of metal are delivered on support, outwards distribute again, improved the heat dispersion of LED lamp chip.Simultaneously, because its inner Ag content of tack coat that produces after sintering silver sintering is very high, therefore, tack coat is less to Optical Absorption, has improved the light efficiency of LED lamp.And, this LED lamp, it is the metal interface contact with contacting of LED chip, support by the tack coat that obtains after sintering silver sintering, and thermal coefficient of expansion approaches, bond strength between its LED chip and support is very high, and after the thrust test, failure mode is generally the tack coat fracture; Can show preferably cold-hot and impact in reliability test, can generation and the peeling off of LED chip, support.
The present invention also provides a kind of method for packing of above-mentioned LED lamp, comprises the steps:
A, on the support plated surface relative with LED chip first coat of metal, plate second coat of metal on the reverse side of LED chip or positive both positive and negative polarity;
B, sintering silver is applied between the second metal coating surface of the first metal coating surface of support and LED chip;
C, above-mentioned sample to be sintered is put into baking box heat-agglomerating, take out after cooling;
D, pressure welding;
E, add encapsulating material encapsulation.
Further, described sintering silver have percentage by weight more than or equal to 80% and particle diameter be less than or equal to the silver powder of 2 microns, all the other compositions are volatile organic additive.
Further, form the tack coat that connects first coat of metal and second coat of metal after described sintering silver sintering, described tack coat has percentage by weight more than or equal to 99% argent.
Further, step c is specially: rise in 170～250 ℃ of scopes with the baking temperature of constant heating rate with baking box, insulation 0.5～1h takes out after then being cooled to room temperature.
the method for packing of LED lamp provided by the invention, complete first coat of metal by the sintering of sintering silver in high temperature, metal between tack coat and the second coat of metal three connects, thereby realize that LED chip conducts heat to the metallic atom of support, because the connection of adhesives inside no longer relies on the macromolecule organic additive, but Ag-Ag particle, the conduction of the heat of this tack coat inside is by the diffusion of Ag-Ag particle thus, with respect to traditional elargol, has higher thermal conductivity, it is second coat of metal of metal material that the heat that LED chip produces passes through entirely, adhesives and first coat of metal are delivered on support, outwards distribute again, improved the heat dispersion of LED lamp chip.Simultaneously, because its inner Ag content of tack coat that produces after sintering silver sintering is very high, therefore, tack coat is less to Optical Absorption, has improved the light efficiency of LED lamp.And, LED lamp by this method for packing acquisition, it is the metal interface contact with contacting of LED chip, support by the tack coat that obtains after sintering silver sintering, thermal coefficient of expansion approaches, bond strength between its LED chip and support is very high, and after the thrust test, failure mode is generally the tack coat fracture; Can show preferably cold-hot and impact in reliability test, can generation and the peeling off of LED chip, support.
Description of drawings
The structural representation of the LED lamp that Fig. 1 provides for one embodiment of the invention;
The structural representation of the LED lamp that Fig. 2 provides for another embodiment of the present invention.
Embodiment
In order to make technical problem to be solved by this invention, technical scheme and beneficial effect clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
Please refer to Fig. 1, one embodiment of the invention provides a kind of LED lamp, comprise the support 3 that is placed in bottom, be located at least one LED chip 1 of described support 3 tops and the encapsulating material 4 that coats LED chip from the top downwards, in between described support 3 surface relative with described LED chip 1, be respectively arranged with first coat of metal 5 and second coat of metal 6, between described first coat of metal 5 and described second coat of metal 6, adopt sintering silver to consist of a tack coat 2 by the mode of sintering.In the present embodiment, the surface that described LED chip 1 is relative with support 3 is the reverse side of LED chip, and described second coat of metal 6 is arranged on the reverse side of LED chip.Herein, the front of LED chip refers to have in LED chip the surface of circuit structure, and reverse side is the insulating surface with vis-a-vis.
In the present embodiment, as shown in Figure 1, first coat of metal 5 comprises first 71 and the second portion 72 at interval, and the positive pole of LED chip, negative pole are connected on first 71 and second portion 72 by a metal lead wire 8 respectively.Insulate between the first 71 of first coat of metal 5 and second portion 72.
In said structure, it is the metal interface contact with contacting of LED chip, support by the tack coat that obtains after sintering silver sintering, thermal coefficient of expansion approaches, and the bond strength between its LED chip and support is very high, and after the thrust test, failure mode is generally the tack coat fracture; Can show preferably cold-hot and impact in reliability test, can generation and the peeling off of LED chip, support.
In the present embodiment, described support comprises ceramics bracket, epoxy support and sheet molding compound support.But not only be confined to this, the support of the present embodiment can comprise all can resistant to elevated temperatures LED support.Metallic support for example, metallic support is such as being copper stent, retort stand etc.
In the present embodiment, encapsulating material is encapsulating material or the epoxy resin that has added fluorescent material.
It is as follows that sintering silvery is made process: according to certain proportioning, silver powder, adhesive, organic solvent and some other volatile organic additives are mixed, obtain the sintering silver of sheet through ball mill grinding.The volatile organic additive of above-mentioned some other can be dispersant (play the Uniform Dispersion particle, prevent the effect of silver-colored particle agglomeration), diluent (playing the effect of regulating sintering silver mobility) etc.
In the present embodiment, preferably, selected sintering silver have percentage by weight more than or equal to 80% and particle diameter be less than or equal to the silver powder of 2 microns, all the other compositions are volatile organic additive, preferably, selected sintering silver has percentage by weight more than or equal to 85% silver powder; Through high temperature sintering, originally being present in the inner volatile organic additive of sintering silver vapors away from sintering silver, product after sintering silver sintering is the tack coat that connects first coat of metal and second coat of metal, and it has percentage by weight more than or equal to 99% argent.The inner loose structure that forms of tack coat, realize the connection between the Ag-Ag particle after oversintering.
In the present embodiment, described first coat of metal 5 is proof gold coating or fine silver coating, and described second coat of metal 6 is proof gold coating or fine silver coating.Herein, proof gold refers to that the purity of gold is more than 99%.Equally, fine silver refers to that the purity of silver is more than 99%.Preferably, described first coat of metal 5, second coat of metal 6 are fine silver coating, not only be conducive to the control of cost, can also obtain consistent outward appearance, and due to, connection between first coat of metal, tack coat and second coat of metal is all by the Ag-Ag particle, and the bonding between tack coat and first coat of metal and second coat of metal is more firm like this.
the LED lamp that the above embodiment of the present invention provides, it utilizes the product after sintering silver sintering to be connected in first coat of metal and second coat of metal between the described support surface relative with LED chip as tack coat, complete first coat of metal by the sintering of sintering silver in high temperature, metal between tack coat and the second coat of metal three connects, thereby realize that LED chip conducts heat to the metallic atom of support, because the connection of adhesives inside no longer relies on the macromolecule organic additive, but Ag-Ag particle, the conduction of the heat of this tack coat inside is by the diffusion of Ag-Ag particle thus, with respect to traditional elargol, has higher thermal conductivity, its thermal conductivity can be up to 100W/mK, even higher, the heat that LED chip produces, more outwards distributes for second coat of metal of metal material, adhesives and first coat of metal are delivered on support by complete, has improved the heat dispersion of LED lamp chip.Simultaneously, because its inner Ag content of tack coat that produces after sintering silver sintering is very high, therefore, tack coat is less to Optical Absorption, has improved the light efficiency of LED lamp.
Please refer to Fig. 2, another embodiment of the present invention provides a kind of LED lamp, comprise the support 30 that is placed in bottom, be located at least one LED chip 10 of described support 30 tops and the encapsulating material 40 that coats LED chip from the top downwards, in between described support 30 surface relative with described LED chip 10, be respectively arranged with first coat of metal 50 and second coat of metal 60, between described first coat of metal 50 and described second coat of metal 60, adopt sintering silver to consist of a tack coat 20 by the mode of sintering.
Be with difference embodiment illustrated in fig. 1, in the present embodiment, the surface that described LED chip 10 is relative with described support 30 is the front of LED chip 10, described second coat of metal 60 comprises the anodal coating 61 on the positive pole in the front that is arranged on LED chip and is arranged on negative pole coating 62 on the negative pole in front of LED chip, described anodal coating 61 and described negative pole coating 62 intervals settings are to prevent short circuit; Described first coat of metal 50 comprises the first support coating 51 and the second support coating 52 of space, described tack coat 20 comprise be connected in the first tack coat 21 between described anodal coating 61 and described the first support coating 51 and be connected in described negative pole coating 62 and described the second support coating 52 between the second adhesive linkage 22.
As shown in Figure 2, in the present embodiment, anodal coating 61, the first support coating 51 and be connected between the first tack coat 21 between anodal coating 61 and the first support coating 51 metal is connected the structure of composition jointly, its with negative pole coating 62, the second support coating 52 and be connected between the second tack coat 22 between anodal coating 61 and the second support coating 52 metal be connected the common structure that forms be that the interval arranges, and insulate between the first support coating 51 and the second support coating 52, cause short circuit to prevent that the LED chip both positive and negative polarity is communicated with.
In the present embodiment, support can be ceramics bracket, epoxy support and sheet molding compound support.But not only be confined to this, the support of the present embodiment can comprise all can resistant to elevated temperatures LED support.Metallic support for example, metallic support is such as being copper stent, retort stand etc.
In the present embodiment, the LED lamp adopts the structure be similar to chip package, namely LED chip just facing to support, and on the positive pole of LED chip, negative pole, anodal coating and negative pole coating are set respectively; With respect to embodiment shown in Figure 1, the LED chip that the present embodiment adopts can have less volume, and shorter contact conductor, not only can reduce the volume of LED lamp, also helps the control of cost.
In the embodiment of Figure 1 and Figure 2, each LED lamp comprises a LED chip, and in other embodiments, the LED lamp also can comprise plural LED chip.It is the Combined LED lamp that the LED lamp that provides of the embodiment of the present invention also can be comprised of a plurality of LED chips.
In addition, the present invention also provides a kind of method for packing of above-mentioned LED lamp, comprises the steps:
A, in the support surface relative with LED chip by electroplating or the mode of chemical plating plates first coat of metal, on the reverse side of LED chip or positive both positive and negative polarity by electroplating or the mode of chemical plating plates second coat of metal.First coat of metal is proof gold coating or fine silver coating, and second coat of metal is proof gold coating or fine silver coating.Preferably, first coat of metal, second coat of metal are fine silver coating, not only are conducive to the control of cost, can also obtain consistent outward appearance.
B, sintering silver is applied between the second metal coating surface of the first metal coating surface of support and LED chip, obtains sample to be sintered; In step b, can be that the mode by a glue or silk screen printing is applied to sintering silver on the first metal coating surface of support, then LED chip is placed on sintering silver, LED chip is connected with support; Can be also, the mode by a glue or silk screen printing be applied to sintering silver on the second metal coating surface of LED chip, and the LED chip that then will apply sintering silver is placed in the support crystal bonding area, and LED chip is connected with support.Preferably, in this step, described sintering silver before sintering not, namely selected sintering silver have percentage by weight more than or equal to 80% and particle diameter be less than or equal to the silver powder of 2 microns, all the other compositions are volatile organic additive.In one embodiment, selected sintering silver have percentage by weight be 90% and particle diameter be to be less than or equal to the silver powder of 1 micron.
C, above-mentioned sample to be sintered is put into baking box heat-agglomerating, take out after cooling.Preferably, described baking box is heated-air circulation roaster.In the present embodiment, step b is specially: rise in 170～250 ℃ of scopes with the baking temperature of constant heating rate with baking box, insulation 0.5～1h takes out after then being cooled to room temperature.More preferably, after the b step, namely described sintering silver after sintering, has percentage by weight more than or equal to 99% silver.
D, pressure welding; The purpose of pressure welding is guided to electrode on LED chip, completes the connection work of outer lead in product.Pressure welding has gold ball bonding and aluminium wire pressure welding dual mode, and the maturation process that it is all in existing LED encapsulation is not described in detail in this herein.
E, add encapsulating material encapsulation.Encapsulating material uses transparent epoxy resin usually.Encapsulation has a rubber seal dress, embedding encapsulation and three kinds of modes of mold pressing encapsulation, and the maturation process that it is all in existing LED encapsulation is not described in detail in this herein.
LED lamp method for packing provided by the invention, complete first coat of metal by the sintering of sintering silver in high temperature, metal between tack coat and the second coat of metal three connects, thereby realize that LED chip conducts heat to the metallic atom of support, because the connection of adhesives inside no longer relies on the macromolecule organic additive, but Ag-Ag particle, the conduction of the heat of this tack coat inside is by the diffusion of Ag-Ag particle thus, with respect to traditional elargol, has higher thermal conductivity, it is second coat of metal of metal material that the heat that LED chip produces passes through entirely, adhesives and first coat of metal are delivered on support, outwards distribute again, improved the heat dispersion of LED lamp chip.Simultaneously, because its inner Ag content of tack coat that produces after sintering silver sintering is very high, therefore, tack coat is less to Optical Absorption, has improved the light efficiency of LED lamp.And, LED lamp by this method for packing acquisition, it is the metal interface contact with contacting of LED chip, support by the tack coat that obtains after sintering silver sintering, thermal coefficient of expansion approaches, bond strength between its LED chip and support is very high, and after the thrust test, failure mode is generally the tack coat fracture; Can show preferably cold-hot and impact in reliability test, can generation and the peeling off of LED chip, support.
The above is only preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces or improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. LED lamp, comprise support, be located at least one LED chip of described support top and the encapsulating material that coats described LED chip, it is characterized in that, in between the described support surface relative with described LED chip, be respectively arranged with first coat of metal and second coat of metal, between described first coat of metal and described second coat of metal, adopt sintering silver to consist of a tack coat by the mode of sintering.
2. LED lamp according to claim 1, is characterized in that, described tack coat has percentage by weight more than or equal to 99% argent.
3. LED lamp according to claim 1, is characterized in that, described first coat of metal is proof gold coating or fine silver coating.
4. LED lamp according to claim 1, is characterized in that, described second coat of metal is proof gold coating or fine silver coating.
5. the described LED lamp of according to claim 1 to 4 any one, is characterized in that, the surface that described LED chip is relative with described support is the reverse side of LED chip, and described second coat of metal is arranged on the reverse side of LED chip.
6. the described LED lamp of according to claim 1 to 4 any one, it is characterized in that, the surface that described LED chip is relative with described support is the front of LED chip, described second coat of metal comprises the anodal coating on the positive pole in the front that is arranged on LED chip and is arranged on negative pole coating on the negative pole in front of LED chip, described anodal coating and the interval setting of described negative pole coating, described first coat of metal comprises the first support coating and the second support coating of space, described tack coat comprise be connected in the first tack coat between described anodal coating and described the first support coating and be connected in described negative pole coating and described the second support coating between the second adhesive linkage.
7. the method for packing of a LED lamp as described in claim 1 to 6 any one, is characterized in that, comprises the steps:
A, on the support plated surface relative with LED chip first coat of metal, plate second coat of metal on the reverse side of LED chip or positive both positive and negative polarity;
B, sintering silver is applied between the second metal coating surface of the first metal coating surface of support and LED chip;
C, above-mentioned sample to be sintered is put into baking box heat-agglomerating, take out after cooling;
D, pressure welding;
E, add encapsulating material encapsulation.
8. the method for packing of LED lamp according to claim 7, is characterized in that, described sintering silver have percentage by weight more than or equal to 80% and particle diameter be less than or equal to the silver powder of 2 microns, all the other compositions are volatile organic additive.
9. the method for packing of LED lamp according to claim 7, is characterized in that, forms the tack coat that connects first coat of metal and second coat of metal after described sintering silver sintering, and described tack coat has percentage by weight more than or equal to 99% argent.
10. the method for packing of the described LED lamp of according to claim 7 to 9 any one, it is characterized in that, step c is specially: rise in 170～250 ℃ of scopes with the baking temperature of constant heating rate with baking box, insulation 0.5～1h takes out after then being cooled to room temperature.
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| CN2013100553537A CN103137831A (en) | 2013-02-21 | 2013-02-21 | Light-emitting diode (LED) lamp and encapsulation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103346096A (en) * | 2013-07-11 | 2013-10-09 | 苏州远创达科技有限公司 | Packaging technology for RF device |
| CN106128966A (en) * | 2016-07-15 | 2016-11-16 | 常州银河世纪微电子有限公司 | Environmental protection welded encapsulation technique |
| WO2020103137A1 (en) * | 2018-11-23 | 2020-05-28 | 北京比特大陆科技有限公司 | Chip heat dissipation structure, chip structure, circuit board and supercomputing device |
| CN111613710A (en) * | 2020-06-29 | 2020-09-01 | 松山湖材料实验室 | Electronic equipment, semiconductor device, packaging structure, support and manufacturing method thereof |
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