CN104766779B - 用于涂覆衬底的方法和涂覆器 - Google Patents

用于涂覆衬底的方法和涂覆器 Download PDF

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Publication number
CN104766779B
CN104766779B CN201510157919.6A CN201510157919A CN104766779B CN 104766779 B CN104766779 B CN 104766779B CN 201510157919 A CN201510157919 A CN 201510157919A CN 104766779 B CN104766779 B CN 104766779B
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China
Prior art keywords
angle
magnet assembly
magnet
substrate
target
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Chinese (zh)
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CN104766779A (zh
Inventor
马库斯·班德尔
马卡斯·哈尼卡
伊夫林·希尔
法毕奥·皮拉里斯
盖德·曼克
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Applied Materials Inc
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Applied Materials Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/345Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452Magnet distribution
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/345Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455Movable magnets
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411Constructional aspects of the reactor
    • H01J37/3461Means for shaping the magnetic field, e.g. magnetic shunts

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201510157919.6A 2009-10-02 2010-09-30 用于涂覆衬底的方法和涂覆器 Active CN104766779B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP09172133.2 2009-10-02
EP09172133A EP2306489A1 (en) 2009-10-02 2009-10-02 Method for coating a substrate and coater
CN201080044690.0A CN102549706B (zh) 2009-10-02 2010-09-30 用于涂覆衬底的方法和涂覆器

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201080044690.0A Division CN102549706B (zh) 2009-10-02 2010-09-30 用于涂覆衬底的方法和涂覆器

Publications (2)

Publication Number Publication Date
CN104766779A CN104766779A (zh) 2015-07-08
CN104766779B true CN104766779B (zh) 2017-07-25

Family

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CN201510157919.6A Active CN104766779B (zh) 2009-10-02 2010-09-30 用于涂覆衬底的方法和涂覆器
CN201080044690.0A Active CN102549706B (zh) 2009-10-02 2010-09-30 用于涂覆衬底的方法和涂覆器

Family Applications After (1)

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CN201080044690.0A Active CN102549706B (zh) 2009-10-02 2010-09-30 用于涂覆衬底的方法和涂覆器

Country Status (7)

Country Link
US (2) US20110079508A1 (https=)
EP (2) EP2306489A1 (https=)
JP (4) JP2013506756A (https=)
KR (2) KR101709520B1 (https=)
CN (2) CN104766779B (https=)
TW (3) TWI567777B (https=)
WO (1) WO2011039316A1 (https=)

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WO2013135265A1 (en) * 2012-03-12 2013-09-19 Applied Materials, Inc. Mini rotatable sputter devices for sputter deposition
CN105026611B (zh) * 2013-02-25 2018-11-27 应用材料公司 具有相邻溅射阴极的装置及其操作方法
EP2778253B1 (de) 2013-02-26 2018-10-24 Oerlikon Surface Solutions AG, Pfäffikon Zylinderförmige Verdampfungsquelle
WO2015072046A1 (ja) * 2013-11-14 2015-05-21 株式会社Joled スパッタリング装置
BE1021296B1 (nl) * 2014-04-18 2015-10-23 Soleras Advanced Coatings Bvba Sputter systeem voor uniform sputteren
CN206654950U (zh) * 2014-05-15 2017-11-21 应用材料公司 用于涂布基板的溅射沉积装置
WO2015199640A1 (en) * 2014-06-23 2015-12-30 Applied Materials, Inc. Method of depositing a layer in a via or trench and products obtained thereby
JP6805124B2 (ja) * 2014-07-09 2020-12-23 ソレラス・アドヴァンスト・コーティングス・ビーヴイ 移動ターゲットを有するスパッタ装置
CN104694892A (zh) * 2015-03-27 2015-06-10 京东方科技集团股份有限公司 一种溅射装置
CN209227052U (zh) * 2015-04-09 2019-08-09 应用材料公司 用于在基板上进行层沉积的设备
CN107636195A (zh) * 2015-06-05 2018-01-26 应用材料公司 溅射沉积源、溅射装置及其操作方法
JP2019519673A (ja) * 2016-04-21 2019-07-11 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 基板をコーティングするための方法、及びコータ
EP3452634B1 (en) * 2016-05-02 2023-09-06 Applied Materials, Inc. Magnetron sputtering method
JP6396367B2 (ja) * 2016-06-27 2018-09-26 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Pvdアレイ用の多方向レーストラック回転カソード
KR101760218B1 (ko) * 2016-08-30 2017-07-20 전기표 수직진동 제트천공장치 및 방법, 그리고 수직진동 제트그라우팅 장치 및 방법
KR20190077575A (ko) * 2016-11-22 2019-07-03 어플라이드 머티어리얼스, 인코포레이티드 기판 상으로의 층 증착을 위한 장치 및 방법
CN107541712A (zh) * 2017-10-11 2018-01-05 广东腾胜真空技术工程有限公司 一种双端进出的玻璃镀膜设备
JP7328744B2 (ja) * 2018-07-31 2023-08-17 キヤノントッキ株式会社 成膜装置、および、電子デバイスの製造方法
WO2021180396A1 (en) * 2020-03-13 2021-09-16 Evatec Ag Apparatus and process with a dc-pulsed cathode array
WO2022009484A1 (ja) * 2020-07-08 2022-01-13 株式会社アルバック 成膜方法
EP4324015A1 (en) 2021-04-16 2024-02-21 Evatec AG Sputtering apparatus for coating of 3d-objects
KR20260025876A (ko) * 2021-04-19 2026-02-24 어플라이드 머티어리얼스, 인코포레이티드 스퍼터 증착 소스, 마그네트론 스퍼터 캐소드, 및 기판 상에 재료를 증착하는 방법
JP7672921B2 (ja) * 2021-08-30 2025-05-08 株式会社アルバック 成膜方法及び成膜装置

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CN101300372A (zh) * 2005-11-04 2008-11-05 新明和工业株式会社 磁控管溅射装置用的磁体构件、阴极单元以及磁控管溅射装置
CN100513633C (zh) * 2004-05-05 2009-07-15 应用材料有限责任与两合公司 带有可转动的磁控管的大面积组件的镀膜机

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AU8320491A (en) * 1990-07-06 1992-02-04 Boc Group, Inc., The Method and apparatus for co-sputtering and cross-sputtering homogeneous films
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JP2006083408A (ja) * 2004-09-14 2006-03-30 Shin Meiwa Ind Co Ltd 真空成膜装置
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JP4937772B2 (ja) * 2007-01-22 2012-05-23 東京エレクトロン株式会社 基板の処理方法
GB0715879D0 (en) * 2007-08-15 2007-09-26 Gencoa Ltd Low impedance plasma
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CN2656432Y (zh) * 2003-09-11 2004-11-17 深圳豪威真空光电子股份有限公司 旋转式磁控溅射靶
CN100513633C (zh) * 2004-05-05 2009-07-15 应用材料有限责任与两合公司 带有可转动的磁控管的大面积组件的镀膜机
CN1861835A (zh) * 2005-05-13 2006-11-15 应用薄膜股份有限公司 操作具有靶的溅射阴极的方法
CN101300372A (zh) * 2005-11-04 2008-11-05 新明和工业株式会社 磁控管溅射装置用的磁体构件、阴极单元以及磁控管溅射装置

Also Published As

Publication number Publication date
JP2015158013A (ja) 2015-09-03
JP2013506756A (ja) 2013-02-28
TW201113927A (en) 2011-04-16
TWI578371B (zh) 2017-04-11
EP2306489A1 (en) 2011-04-06
JP2017128813A (ja) 2017-07-27
TWI494969B (zh) 2015-08-01
JP6104967B2 (ja) 2017-03-29
CN102549706A (zh) 2012-07-04
US20120273343A1 (en) 2012-11-01
JP2015148014A (ja) 2015-08-20
KR101709520B1 (ko) 2017-02-23
KR20150052359A (ko) 2015-05-13
KR101708194B1 (ko) 2017-02-20
CN104766779A (zh) 2015-07-08
TW201530606A (zh) 2015-08-01
EP2483907A1 (en) 2012-08-08
EP2483907B1 (en) 2016-07-27
CN102549706B (zh) 2016-03-02
WO2011039316A1 (en) 2011-04-07
US20110079508A1 (en) 2011-04-07
TW201539524A (zh) 2015-10-16
JP6385487B2 (ja) 2018-09-05
TWI567777B (zh) 2017-01-21
KR20120092619A (ko) 2012-08-21
JP5993974B2 (ja) 2016-09-21

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