CN104716081A - 柔性装置及其制作方法 - Google Patents

柔性装置及其制作方法 Download PDF

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CN104716081A
CN104716081A CN201510138382.9A CN201510138382A CN104716081A CN 104716081 A CN104716081 A CN 104716081A CN 201510138382 A CN201510138382 A CN 201510138382A CN 104716081 A CN104716081 A CN 104716081A
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CN104716081B (zh
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刘陆
谢明哲
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BOE Technology Group Co Ltd
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Priority to US15/031,242 priority patent/US10046548B2/en
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Priority to PCT/CN2015/089924 priority patent/WO2016150120A1/en
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Abstract

本发明提供了一种柔性装置及其制作方法,该方法包括:在刚性基底上形成牺牲层;在所述牺牲层之上形成反射层;在所述反射层的上方制作柔性显示器件;使用激光照射所述牺牲层,将刚性基底剥离。本发明中,由于在牺牲层上方还形成有反射层,能够在进行剥离时,将照射的激光反射回牺牲层,这样就增加了牺牲层所吸收的激光的能量。从而能够降低剥离过程中所需要使用的激光的能量。

Description

柔性装置及其制作方法
技术领域
本发明涉及显示技术领域,尤其涉及一种用于柔性装置及其制作方法。
背景技术
目前柔性的制作工艺有roll-to-roll和片对片两种制造方式。片对片生产模式可以很好的利用液晶面板的生产工艺和设备,具体的方法是以刚性基底作为载具,将柔性装置制作在刚性基底上,之后再将刚性基底与制作好的柔性装置剥离的方法。
其中一种剥离方法是飞利浦公司所采用的激光剥离方法,这种方法中采用激光来破坏柔性装置与刚性基底之间界面来达到分离效果,在这种技术中,柔性装置和玻璃基板之间增加一层牺牲层来增强柔性装置和刚性基底之间的分离效果。由于柔性装置在制作的过程中需要采用高温工艺,因此需要牺牲层在300-400摄氏度的温度中保持原有的性能。这样就导致需要用高能量的激光来剥离,功耗较高。
发明内容
本发明的一个目的是降低刚性基底与制作好的柔性装置剥离的过程所需要使用的激光的能量。
本发明提供了一种柔性装置的制作方法,包括:
在刚性基底上形成牺牲层;
在至少一部分所述牺牲层之上形成反射层;
在所述牺牲层和所述反射层的上方制作柔性显示器件;
使用激光照射所述牺牲层,将刚性基底剥离。
进一步的,所述反射层的位置与所述柔性显示器件中的周边电路区域相对应。
进一步的,所述反射层覆盖全部的所述牺牲层。
进一步的,所述在刚性基底上形成牺牲层包括:
使用有机材料制作所述牺牲层。
进一步的,所述使用有机材料制作所述牺牲层具体为:
使用聚酰亚胺制作所述牺牲层。
进一步的,所述使用聚酰亚胺制作所述牺牲层包括:
在刚性基底上涂覆聚酰亚胺溶液;
对涂覆的聚酰亚胺溶液热固化形成牺牲层。
进一步的,在刚性基底上形成牺牲层之后,在所述牺牲层和所述反射层的上方制作柔性显示器件之前,所述方法还包括:在所述牺牲层和所述反射层之上形成柔性基底层;
在所述牺牲层和所述反射层的上方制作柔性显示器件,具体包括:在所述柔性基底层上制作柔性显示器件。
进一步的,所述在所述牺牲层和所述反射层之上形成柔性基底层包括:使用聚酰亚胺制作所述柔性基底层。
进一步的,所述在至少一部分所述牺牲层之上形成反射层包括:采用溅射工艺形成所述反射层。
本发明还提供了一种利用上述任一项所述的方法制作的柔性装置。
本发明中,由于在牺牲层上方还形成有反射层,能够在进行剥离时,将照射的激光反射回牺牲层,这样就增加了牺牲层所吸收的激光的能量。这样能够降低剥离过程中所需要使用的激光的能量。
附图说明
图1为本发明一实施例提供的一种柔性装置的制作方法的流程示意图;
图2为在图1的步骤S1之后得到的中间结构的结构示意图;
图3为在图1的步骤S2之后得到的中间结构的结构示意图;
图4为在图1的步骤S3之后得到的中间结构的结构示意图;
图5为在图1的步骤S4中之后得到的柔性基板的结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整的描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他的实施例,都属于本发明保护的范围。
本发明一实施例提供了一种柔性装置的制作方法,如图1所示,该方法可以包括如下流程:
步骤S1,在刚性基底上形成牺牲层;
步骤S2,在至少一部分所述牺牲层之上形成反射层;
步骤S3,在所述牺牲层和所述反射层的上方制作柔性显示器件;
步骤S4,使用激光照射所述牺牲层,将刚性基底剥离。
本发明实施例中,由于在牺牲层上方还形成有反射层,能够在进行剥离时,将照射的激光反射回牺牲层,这样就增加了牺牲层所吸收的激光的能量。这样能够降低剥离过程中所需要使用的激光的能量。
在具体实施时,这里的刚性基底可以具体为玻璃基板等。这里的牺牲层可以采用能够吸收光的能量分解的材料制作,比如可以采用无机材料比如氮化硅、二氧化硅等制作。本发明提供的一种可选的方式中,采用有机材料制作上述的牺牲层,采用有机材料制作的牺牲层更容易在激光的作用下分解,从而能够降低剥离过程中所使用的激光的能量。更进一步的,可以采用聚酰亚胺材料作为牺牲层。采用聚亚酰胺材料作为牺牲层的好处是,由于聚亚酰胺材料具有良好的耐高温特性,能够在后续制作柔性显示器件的高温工艺中使得由聚亚酰胺材料制作的牺牲层不受高温的影响,从而避免一项所制作的柔性显示器件的性能。在具体实施时,当采用聚酰亚胺制作牺牲层时,可以将聚酰亚胺溶液涂覆在刚性基底上,然后进行热固化得到牺牲层。
在步骤S1之后,所形成的中间结构的结构可以参考图2,包括基底1和形成在基底1上覆盖整个基底1的牺牲层2。
在上述的步骤S2中,可以通过溅射工艺或者气相沉淀工艺在牺牲层上形成一反射层,该反射层可以采用金属材料比如Al或者AlNd制作,当然采用其他具有能够反射光线的材料也可以实现本发明的技术方案。
在实际应用中,在步骤S2中,所形成的反射层可以覆盖整个基板,这样能够降低整体所使用的激光的能量。作为一种可选的方式,也可以仅形成在对应于柔性装置的周边电路区域的区域。这里的周边电路区域可以具体指GOA设计区域,集成电路绑定的区域(IC bonding区域)等电路的区域。由于在实际应用中,周边电路通常高温压着在基板上。因此,在对应于周边电路区域的区域,刚性基底与牺牲层之间的附着力更大,需要更高的能量进行分离。仅形成在柔性装置的周边电路区域对应的区域,可以降低该区域所需要使用的激光的能量,使得在分离过程中可以使用相同能量的激光对不同区域的牺牲层进行照射剥离。因此,不仅可以降低所使用的激光的能量,而且节省了调整激光能量的步骤,有利于生产效率的提高。
在步骤S2中,反射层仅形成在周边电路区域对应的区域时,所形成的中间结构的结构可以参考图3,与图2不同的是,在材料层2上还形成有反射层3,该反射层3仅形成在基板上的部分区域。
在实际应用中,在步骤S2之后,步骤S3之前,上述的方法还可以包括图中未示出的:
步骤S3a,在所述反射层之上形成柔性基底层。
这里的柔性基底层覆盖基板的在一个像素内的所有区域,具体来说,当反射层覆盖整个像素区域时,该柔性基底层形成在整个反射层上。当反射层仅形成在对应于周边电路区域的区域时,这里的柔性基底层形成在反射层和牺牲层上,覆盖整个像素区域。
步骤S4具体包括:在所述柔性基底层制作柔性显示器件。
这里的柔性基底层可以也可以采用聚酰亚胺制作。此时步骤S3a中制作柔性基底层的方式可以参照上述的步骤S1中制作牺牲层的方式,在此不再详细说明。
在具体实施时,上述的柔性显示器件可以具体包括两部分,一部分是显示器件,一部分是周边电路。该周边电路压着在显示器件上。此时,在步骤S4之后,所形成的中间结构的结构可以参考图4,与图3不同的是,该反射层3上方还形成有柔性基底层4、形成在柔性基底层4之上的显示器件5、以及形成在显示器件5之上的周边电路6。
这里的步骤S4中,使用激光照射所述牺牲层,将刚性基底剥离是指从刚性基底的方向照射牺牲层。
在步骤S4剥离刚性基底之后,得到相应的柔性装置。参考图5,该柔性装置包括可以反射层3、柔性基底层4、显示器件5和周边电路6。
基于相同的构思,本发明一实施例还提供了一种柔性装置,该柔性装置为通过上述任一项所述的方法制作的柔性装置。这里的柔性装置的具体结构可以同样参考图5,包括:牺牲层2、形成在所述牺牲层2之上的反射层3、形成在反射层3之上的柔性基底层4、形成在柔性基底层4之上的显示器件5以及形成在显示器件5之上的周边电路6。这里的柔性基底层4可以采用聚酰亚胺制作,反射层3可以采用金属材料制作,且反射层3的位置与周边电路6的位置对应。
制作本发明实施例提供的柔性装置的剥离过程中,由于在牺牲层上方还形成有反射层,能够在进行剥离时,将照射的激光反射回牺牲层,这样就增加了牺牲层所吸收的激光的能量。这样能够降低剥离过程中所需要使用的激光的能量。
另外,在实际应用中,上述的反射层3也可以与柔性基底层4一样,布满整个像素区域,相应的柔性装置也能降低制作该柔性装置时的剥离过程所需要使用的激光的能量。
以上所述,仅为本发明的具体实施方式,但是,本发明的保护范围不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到的变化或替代,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。

Claims (10)

1.一种柔性装置的制作方法,其特征在于,包括:
在刚性基底上形成牺牲层;
在至少一部分所述牺牲层之上形成反射层;
在所述牺牲层和所述反射层的上方制作柔性基底层;
使用激光照射所述牺牲层,将刚性基底剥离。
2.如权利要求1所述的方法,其特征在于,
所述反射层的位置与所述柔性显示器件中的周边电路区域相对应。
3.如权利要求1所述的方法,其特征在于,
所述反射层覆盖全部的所述牺牲层。
4.如权利要求1所述的方法,其特征在于,所述在刚性基底上形成牺牲层包括:
使用有机材料制作所述牺牲层。
5.如权利要求4所述的方法,其特征在于,所述使用有机材料制作所述牺牲层具体为:
使用聚酰亚胺制作所述牺牲层。
6.如权利要求5所述的方法,其特征在于,所述使用聚酰亚胺制作所述牺牲层包括:
在刚性基底上涂覆聚酰亚胺溶液;
对涂覆的聚酰亚胺溶液热固化形成牺牲层。
7.如权利要求1-6所述的方法,其特征在于,在所述牺牲层和所述反射层的上方制作柔性基底层之后还包括:
在所述柔性基底层上制作柔性显示器件。
8.如权利要求7所述的方法,其特征在于,所述在所述牺牲层和所述反射层之上形成柔性基底层包括:使用聚酰亚胺制作所述柔性基底层。
9.如权利要求1所述的方法,其特征在于,所述在至少一部分所述牺牲层之上形成反射层包括:采用溅射工艺形成所述反射层。
10.一种利用如权利要求1-9任一项所述的方法制作的柔性装置。
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016150120A1 (en) * 2015-03-26 2016-09-29 Boe Technology Group Co., Ltd. Flexible device and fabrication method thereof, display apparatus
WO2019080329A1 (zh) * 2017-10-23 2019-05-02 武汉华星光电半导体显示技术有限公司 柔性基板剥离方法及柔性基板
WO2019114072A1 (zh) * 2017-12-12 2019-06-20 武汉华星光电半导体显示技术有限公司 柔性显示面板的制作方法
CN110556330A (zh) * 2019-09-12 2019-12-10 云谷(固安)科技有限公司 支撑衬底、剥离装置、柔性显示面板及其制备方法
WO2020113752A1 (zh) * 2018-12-05 2020-06-11 武汉华星光电半导体显示技术有限公司 显示器结构及制造方法
CN112289806A (zh) * 2020-10-16 2021-01-29 Tcl华星光电技术有限公司 阵列基板及显示面板
CN113496935A (zh) * 2020-04-08 2021-10-12 深圳市柔宇科技有限公司 可拉伸显示面板及其制备方法、及可拉伸电子设备
WO2022032838A1 (zh) * 2020-08-10 2022-02-17 深圳市华星光电半导体显示技术有限公司 基板及其分离方法、显示面板

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110993568B (zh) * 2019-10-25 2023-06-20 京东方科技集团股份有限公司 一种显示器件制造方法及显示器件
CN112103404A (zh) * 2020-09-21 2020-12-18 福建华佳彩有限公司 一种柔性oled器件及制作方法
TW202228999A (zh) * 2020-10-06 2022-08-01 加拿大商歐姆尼普萊科技股份有限公司 用於從剛性基材上製造及分離可撓性微電子裝置的技術

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103345084A (zh) * 2013-07-03 2013-10-09 京东方科技集团股份有限公司 一种柔性显示器的制备方法和柔性显示器
CN103413775A (zh) * 2013-07-19 2013-11-27 京东方科技集团股份有限公司 一种柔性显示器件的制备方法及装置
CN103762194A (zh) * 2014-01-26 2014-04-30 上海交通大学 一种柔性显示装置的制造方法
CN103996698A (zh) * 2014-05-29 2014-08-20 友达光电股份有限公司 一种软性面板的制作方法
CN104051496A (zh) * 2014-06-04 2014-09-17 昆山工研院新型平板显示技术中心有限公司 一种柔性显示器及其制作方法
CN104143565A (zh) * 2014-07-28 2014-11-12 京东方科技集团股份有限公司 一种柔性显示基板及其制备方法与显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050116235A1 (en) 2003-12-02 2005-06-02 Schultz John C. Illumination assembly
US7527995B2 (en) 2004-09-27 2009-05-05 Qualcomm Mems Technologies, Inc. Method of making prestructure for MEMS systems
US8216876B2 (en) * 2008-02-20 2012-07-10 Sharp Kabushiki Kaisha Method for manufacturing flexible semiconductor substrate
KR101149433B1 (ko) * 2009-08-28 2012-05-22 삼성모바일디스플레이주식회사 플렉서블 표시 장치 및 그 제조 방법
CN102013414A (zh) * 2009-09-08 2011-04-13 群康科技(深圳)有限公司 软性显示器组件的制作方法
CN104716081B (zh) 2015-03-26 2017-09-15 京东方科技集团股份有限公司 柔性装置及其制作方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103345084A (zh) * 2013-07-03 2013-10-09 京东方科技集团股份有限公司 一种柔性显示器的制备方法和柔性显示器
CN103413775A (zh) * 2013-07-19 2013-11-27 京东方科技集团股份有限公司 一种柔性显示器件的制备方法及装置
CN103762194A (zh) * 2014-01-26 2014-04-30 上海交通大学 一种柔性显示装置的制造方法
CN103996698A (zh) * 2014-05-29 2014-08-20 友达光电股份有限公司 一种软性面板的制作方法
CN104051496A (zh) * 2014-06-04 2014-09-17 昆山工研院新型平板显示技术中心有限公司 一种柔性显示器及其制作方法
CN104143565A (zh) * 2014-07-28 2014-11-12 京东方科技集团股份有限公司 一种柔性显示基板及其制备方法与显示装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016150120A1 (en) * 2015-03-26 2016-09-29 Boe Technology Group Co., Ltd. Flexible device and fabrication method thereof, display apparatus
US10046548B2 (en) 2015-03-26 2018-08-14 Boe Technology Group Co., Ltd. Flexible device and fabrication method thereof, display apparatus
WO2019080329A1 (zh) * 2017-10-23 2019-05-02 武汉华星光电半导体显示技术有限公司 柔性基板剥离方法及柔性基板
WO2019114072A1 (zh) * 2017-12-12 2019-06-20 武汉华星光电半导体显示技术有限公司 柔性显示面板的制作方法
WO2020113752A1 (zh) * 2018-12-05 2020-06-11 武汉华星光电半导体显示技术有限公司 显示器结构及制造方法
CN110556330A (zh) * 2019-09-12 2019-12-10 云谷(固安)科技有限公司 支撑衬底、剥离装置、柔性显示面板及其制备方法
CN110556330B (zh) * 2019-09-12 2022-03-22 云谷(固安)科技有限公司 支撑衬底、剥离装置、柔性显示面板及其制备方法
CN113496935A (zh) * 2020-04-08 2021-10-12 深圳市柔宇科技有限公司 可拉伸显示面板及其制备方法、及可拉伸电子设备
WO2022032838A1 (zh) * 2020-08-10 2022-02-17 深圳市华星光电半导体显示技术有限公司 基板及其分离方法、显示面板
CN112289806A (zh) * 2020-10-16 2021-01-29 Tcl华星光电技术有限公司 阵列基板及显示面板

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