CN104681690A - Support structure of lateral light emitting diode - Google Patents
Support structure of lateral light emitting diode Download PDFInfo
- Publication number
- CN104681690A CN104681690A CN201310642507.2A CN201310642507A CN104681690A CN 104681690 A CN104681690 A CN 104681690A CN 201310642507 A CN201310642507 A CN 201310642507A CN 104681690 A CN104681690 A CN 104681690A
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- CN
- China
- Prior art keywords
- hole
- emitting diode
- electrode layer
- metallic support
- protuberance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- 230000000994 depressogenic effect Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 abstract description 14
- 238000003466 welding Methods 0.000 abstract description 10
- 238000009713 electroplating Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000012945 sealing adhesive Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a support structure of a lateral light emitting diode. The support structure comprises a metal support, an electroplating layer and at least one rubber seat. The metal support is provided with at least one first electrode layer and at least one second electrode layer, each first electrode layer is provided with a first running-through hole, and the first running-through hole is provided with a first welding part. Each second electrode layer is provided with a second running-through hole, and the second running-through hole is provided with a second welding part. The electroplating layer is arranged on the surface of the metal support. The rubber seat is arranged on the metal support and the electroplating layer and is provided with a hollow functional area, a first through hole and a second through hole are respectively formed in two sides of the hollow functional area, the first running-through hole is exposed by virtue of the first through hole, and the second running-through hole is exposed by virtue of the second through hole. After cutting, an electrode is welded on an open exposed side of the first welding part and the second welding part. When the support structure of the lateral light emitting diode is cut, the side edge welding electrode of the lateral light emitting diode can be prevented from being damaged.
Description
Technical field
The present invention is relevant a kind of light-emitting diode, espespecially a kind of supporting structure of lateral type light-emitting diode.
Background technology
Light-emitting diode belongs to one of semiconductor element, because light-emitting diode has the characteristics such as volume is little, the life-span is long, power consumption is little, has been widely used on 3C Product indicating device, display unit and light fixture.
In recent years under the extensive utilization of light-emitting diode, in the making of many light-emitting diodes, great majority are all in the brightness promoting light-emitting diode, or have polychrome function.But when making a good light-emitting diode, the supporting structure of this light-emitting diode is also one of very important technology on making.
The supporting structure of existing lateral type light-emitting diode, comprise a rubber base and metallic support, metallic support be by a bronze medal metal material belt made by the punching press, by metallic support through electroplating processes, formation one electrodeposited coating on surface ag material being plated on this metallic support, again the metallic support electroplated is positioned over when this male and female mould utilizing hot pressing or ejection formation, this rubber base will be formed on metallic support, and there are hollow functional areas of exposing for metallic support on rubber base, these hollow functional areas are for die bond and routing, colloid is injected in this inside, hollow functional areas after routing, namely the encapsulation process of lateral type light-emitting diode is completed.
In the past, the electrode pin of lateral type light-emitting diode was all be exposed to rubber base outside, therefore after packaging is accomplished, then carried out cutting and bending of electrode pin, made this lateral type light-emitting diode be able to side direction and was welded on circuit board and uses.Because electrode pin is when cutting and bend, capital makes the electrodeposited coating on electrode pin damage, the copper product of metallic support is exposed, therefore at follow-up lateral type light-emitting diode when with welding circuit board, the solder joint on electrode pin and circuit board will be caused to produce the situation of failure welding, cause lateral type light-emitting diode to be lit.
Summary of the invention
Therefore main purpose of the present invention, be to solve above-mentioned existing issue, the supporting structure of luminous for lateral type polar body redesigns by the present invention, encapsulation complete cut lateral type light-emitting diode time, the side welding electrode of lateral type light-emitting diode can not be injured, the side welding electrode of lateral type light-emitting diode can effectively be welded with the solder joint on circuit board.
In order to achieve the above object, the invention provides a kind of supporting structure of lateral type light-emitting diode, comprising:
One metallic support, its at least one group one first electrode layer and a second electrode lay, a side epirelief of this first electrode layer is stretched and is had one first protuberance, this first protuberance has one first through hole, and the internal face of this first through hole forms one first weld part; One side epirelief of this second electrode lay is stretched and is had one second protuberance, this second protuberance has one second through hole, and the internal face of this second through hole forms one second weld part;
One electrodeposited coating, is located on the surface of this metallic support;
At least one rubber base, be located on this metallic support and electrodeposited coating, this rubber base have hollow functional areas, these hollow functional areas make this first electrode layer and this second electrode lay expose, separately respectively there is on the both sides of these hollow functional areas one first through hole and one second through hole, this first through hole makes the first protuberance of this first electrode layer and this first through hole expose, and this second through hole makes the second protuberance of this second electrode lay and this second through hole expose.
Wherein, this metallic support is alloyed copper material.
Wherein, this first through hole and this second through hole are microscler.
Wherein, this first electrode layer has more one first front and one first back side, on this first back side, there is at least one first depressed part.
Wherein, this second electrode lay has more one second front and one second back side, on this second back side, there is at least one second depressed part.
Wherein, this metallic support has more a metal edge frame, this metal edge frame has multiple connecting portion, and the plurality of connecting portion has connected this first electrode layer and this second electrode lay of many groups.
In order to achieve the above object, the invention provides the supporting structure of another kind of lateral type light-emitting diode, comprising:
One metallic support, its at least one group one first electrode layer and a second electrode lay, a side epirelief of this first electrode layer is stretched and is had one first protuberance, this first protuberance has one first through hole, and the internal face of this first through hole forms one first weld part; One side epirelief of this second electrode lay is stretched and is had one second protuberance, this second protuberance has one second through hole, and the internal face of this second through hole forms one second weld part;
One electrodeposited coating, is located on the surface of this metallic support;
At least one rubber base, is located on this metallic support and electrodeposited coating, this rubber base has hollow functional areas, and these hollow functional areas make this first electrode layer and this second electrode lay expose.
Wherein, this metallic support is alloyed copper material.
Wherein, this first through hole and this second through hole are microscler.
Wherein, this first electrode layer has more one first front and one first back side, on this first back side, there is at least one first depressed part.
Wherein, this second electrode lay has more one second front and one second back side, on this second back side, there is at least one second depressed part.
Wherein, this metallic support has more a metal edge frame, this metal edge frame has multiple connecting portion, and the plurality of connecting portion has connected this first electrode layer and this second electrode lay of many groups.
Beneficial functional of the present invention is, adopt the supporting structure of lateral type light-emitting diode of the present invention, after cutting, electrodeposited coating on first weld part and the second weld part can not be subject to cutting rear damage, makes the first weld part and the second weld part can electrically be welded on circuit board by lateral type light-emitting diode.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Accompanying drawing explanation
Fig. 1 is the metallic support schematic diagram of the supporting structure of lateral type light-emitting diode of the present invention;
Fig. 2 is front schematic view metallic support of the present invention forming multiple rubber base;
Fig. 3 is schematic bottom view metallic support of the present invention forming multiple rubber base;
Fig. 4 is that supporting structure of the present invention cuts front schematic view;
Fig. 5 is that supporting structure of the present invention cuts rear single supporting structure stereoscopic schematic diagram;
Fig. 6 is the using state schematic diagram of lateral type light-emitting diode of the present invention;
Fig. 7 is another embodiment of the present invention schematic diagram.
Wherein, Reference numeral
1 metallic support
11 metal edge frames
11a, 11b connecting portion
12 first electrode layers
121 first fronts
122 first back sides
123 first depressed parts
124 sides
125 first protuberances
126 first through holes
127 first weld parts
13 the second electrode lays
131 second fronts
132 second back sides
133 second depressed parts
134 sides
135 second protuberances
136 second through holes
137 second weld parts
2 rubber bases
21 hollow functional areas
22 first through holes
23 second through holes
3 circuit boards
Embodiment
Below in conjunction with the drawings and specific embodiments, technical solution of the present invention is described in detail, further to understand object of the present invention, scheme and effect, but not as the restriction of claims protection range of the present invention.
Referring to Fig. 1, is the metallic support schematic diagram of the supporting structure of lateral type light-emitting diode of the present invention.As shown in the figure: the supporting structure of lateral type light-emitting diode of the present invention, so that the sheet metal punch forming of alloyed copper material is had a metallic support 1, this metallic support 1 has a metal edge frame 11, this metal edge frame 11 connects stamping forming first electrode layer 12 of many groups and the second electrode lay 13 by multiple connecting portion 11a, 11b.This first electrode layer 12 of many groups and this second electrode lay 13 is had to carry out the electroplating processes of ag material in this metallic support 1 punch forming, an electrodeposited coating (not shown) can be formed with on the surface of the first electrode layer 12 of this metallic support 1 and the second electrode lay 13, this electrodeposited coating with after providing lateral type light-emitting diode to complete, this first electrode layer 12 and this second electrode lay 13 can with electrical connection on circuit board (not shown).
This first electrode layer 12, it has one first front 121 and one first back side 122, has at least one first depressed part 123 on this first back side 122.Separately on a side 124 of this first electrode layer 12, protruded out one first protuberance 125, this first protuberance 125 has had a first microscler through hole 126, the internal face of this first through hole 126 forms one first weld part 127.
This second electrode lay 13, it has one second front 131 and one second back side 132, has at least one second depressed part 133 on this second back side 132.Separately on a side 134 of this second electrode lay 13, protruded out one second protuberance 135, this second protuberance 135 has had a second microscler through hole 136, the internal face of this second through hole 136 forms one second weld part 137.
Referring to Fig. 2 and Fig. 3, is the front and the schematic bottom view that metallic support of the present invention form multiple rubber base.As shown in the figure: when after metallic support 1 punching press and electroplating processes, metallic support 1 is placed in mould (not shown), utilize hot pressing or ejection forming technique that this plastic shaping is formed with multiple rubber base 2 on this metallic support 1, each this rubber base 2 have hollow functional areas 21, these hollow functional areas 21 make the first front 121 of this first electrode layer 12 and the second front 131 of this second electrode lay 13 expose, separately respectively there is on the both sides of these hollow functional areas 21 one first through hole 22 and one second through hole 23, this first through hole 22 makes the first protuberance 125 of this first electrode layer 12 and the first through hole 126 expose, similarly, this second through hole 23 makes the second protuberance 135 of this second electrode lay 13 and the second through hole 136 expose.
Referring to Fig. 4 and Fig. 5, is that supporting structure of the present invention cuts front and cuts rear single supporting structure stereoscopic schematic diagram.As shown in the figure: when before cutting supporting structure prior to the hollow functional areas 21 of this rubber base 2 in carry out the courses of processing such as die bond, routing and sealing, after die bond, routing and sealing adhesive process, just carry out cutting of rubber base 2.
When cutting, when being cut by the cutting line 2a of the side of the hollow functional areas 21 of this rubber base 2 of one, by the second through hole 136 of the first through hole 126 and this second through hole 23 that cut through the first through hole 22, after cutting, make the second weld part 137 of the first weld part 127 of the first through hole 126 on this first through hole 22 and the second through hole 136 of this second through hole 23 expose in open shape, make this first weld part 127 and the second weld part 137 form side welding electrode.
And after cutting, the electrodeposited coating on this first weld part 127 and this second weld part 137 can not be subject to cutting rear damage, makes this first weld part 127 and this second weld part 137 that this lateral type light-emitting diode can be electrically welded on this circuit board.
Referring to Fig. 6, is the using state schematic diagram of lateral type light-emitting diode of the present invention.As shown in the figure: in lateral type LED package and after having cut, the electrodeposited coating on the first weld part 127 of lateral type light-emitting diode both sides and the second weld part 137 can be utilized can to engage with scolding tin, make this lateral type light-emitting diode can be welded on the pad (not shown) of this circuit board 3, make on the surface of rubber base 2 side laminating circuit board 3 of this lateral type light-emitting diode, when this lateral type light-emitting diode is lit, this light and the projection of this circuit board 3 in the relation of being parallel to each other are gone out.
Referring to Fig. 7, is another embodiment of the present invention schematic diagram.As shown in the figure: the present embodiment is roughly the same with above-mentioned Fig. 1 to Fig. 6, different be in the rubber base 2 of the supporting structure of lateral type light-emitting diode of the present invention in hot pressing or ejection formation time, be not manufactured with the design of the first through hole 22 and the second through hole 23 in the both sides, hollow functional areas 21 of this rubber base 2, directly make second protuberance 135, second through hole 136 in the back segment portion of the back segment portion of this first electrode layer 12 and this first protuberance 125, first through hole 126 and this second pole layer 13 all exposed.
After cutting, the electrodeposited coating on this first weld part 127 and this second weld part 137 can not be subject to cutting rear damage, makes this first weld part 127 and this second weld part 137 that this lateral type light-emitting diode can be electrically welded on this circuit board.
Certainly; the present invention also can have other various embodiments; when not deviating from the present invention's spirit and essence thereof; those of ordinary skill in the art are when making various corresponding change and distortion according to the present invention, but these change accordingly and are out of shape the protection range that all should belong to the claim appended by the present invention.
Claims (12)
1. a supporting structure for lateral type light-emitting diode, is characterized in that, comprising:
One metallic support, its at least one group one first electrode layer and a second electrode lay, a side epirelief of this first electrode layer is stretched and is had one first protuberance, this first protuberance has one first through hole, and the internal face of this first through hole forms one first weld part; One side epirelief of this second electrode lay is stretched and is had one second protuberance, this second protuberance has one second through hole, and the internal face of this second through hole forms one second weld part;
One electrodeposited coating, is located on the surface of this metallic support;
At least one rubber base, be located on this metallic support and electrodeposited coating, this rubber base have hollow functional areas, these hollow functional areas make this first electrode layer and this second electrode lay expose, separately respectively there is on the both sides of these hollow functional areas one first through hole and one second through hole, this first through hole makes the first protuberance of this first electrode layer and this first through hole expose, and this second through hole makes the second protuberance of this second electrode lay and this second through hole expose.
2. the supporting structure of lateral type light-emitting diode according to claim 1, is characterized in that, this metallic support is alloyed copper material.
3. the supporting structure of lateral type light-emitting diode according to claim 2, is characterized in that, this first through hole and this second through hole are microscler.
4. the supporting structure of lateral type light-emitting diode according to claim 3, is characterized in that, this first electrode layer has more one first front and one first back side, on this first back side, has at least one first depressed part.
5. the supporting structure of lateral type light-emitting diode according to claim 4, is characterized in that, this second electrode lay has more one second front and one second back side, on this second back side, has at least one second depressed part.
6. the supporting structure of lateral type light-emitting diode according to claim 5, it is characterized in that, this metallic support has more a metal edge frame, this metal edge frame has multiple connecting portion, and the plurality of connecting portion has connected this first electrode layer and this second electrode lay of many groups.
7. a supporting structure for lateral type light-emitting diode, is characterized in that, comprising:
One metallic support, its at least one group one first electrode layer and a second electrode lay, a side epirelief of this first electrode layer is stretched and is had one first protuberance, this first protuberance has one first through hole, and the internal face of this first through hole forms one first weld part; One side epirelief of this second electrode lay is stretched and is had one second protuberance, this second protuberance has one second through hole, and the internal face of this second through hole forms one second weld part;
One electrodeposited coating, is located on the surface of this metallic support;
At least one rubber base, is located on this metallic support and electrodeposited coating, this rubber base has hollow functional areas, and these hollow functional areas make this first electrode layer and this second electrode lay expose.
8. supporting structure according to claim 7, is characterized in that, this metallic support is alloyed copper material.
9. supporting structure according to claim 8, is characterized in that, this first through hole and this second through hole are microscler.
10. supporting structure according to claim 9, is characterized in that, this first electrode layer has more one first front and one first back side, on this first back side, has at least one first depressed part.
11. supporting structures according to claim 10, is characterized in that, this second electrode lay have more one second front and one second back side, on this second back side, have at least one second depressed part.
12. supporting structures according to claim 11, is characterized in that, this metallic support have more a metal edge frame, and this metal edge frame has multiple connecting portion, and the plurality of connecting portion has connected this first electrode layer and this second electrode lay of many groups.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310642507.2A CN104681690A (en) | 2013-12-03 | 2013-12-03 | Support structure of lateral light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310642507.2A CN104681690A (en) | 2013-12-03 | 2013-12-03 | Support structure of lateral light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104681690A true CN104681690A (en) | 2015-06-03 |
Family
ID=53316494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310642507.2A Pending CN104681690A (en) | 2013-12-03 | 2013-12-03 | Support structure of lateral light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104681690A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101213677A (en) * | 2005-05-30 | 2008-07-02 | 奥斯兰姆奥普托半导体有限责任公司 | Housing body and method for production thereof |
| CN102144306A (en) * | 2008-09-03 | 2011-08-03 | 日亚化学工业株式会社 | Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body |
| CN102165612A (en) * | 2008-09-29 | 2011-08-24 | 奥斯兰姆奥普托半导体有限责任公司 | LED module and production method |
-
2013
- 2013-12-03 CN CN201310642507.2A patent/CN104681690A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101213677A (en) * | 2005-05-30 | 2008-07-02 | 奥斯兰姆奥普托半导体有限责任公司 | Housing body and method for production thereof |
| CN102144306A (en) * | 2008-09-03 | 2011-08-03 | 日亚化学工业株式会社 | Light emitting device, resin package, resin-molded body, and methods for manufacturing light emitting device, resin package and resin-molded body |
| CN102165612A (en) * | 2008-09-29 | 2011-08-24 | 奥斯兰姆奥普托半导体有限责任公司 | LED module and production method |
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| PB01 | Publication | ||
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Application publication date: 20150603 |