CN104681502A - 大功率半导体装置 - Google Patents

大功率半导体装置 Download PDF

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Publication number
CN104681502A
CN104681502A CN201410613719.2A CN201410613719A CN104681502A CN 104681502 A CN104681502 A CN 104681502A CN 201410613719 A CN201410613719 A CN 201410613719A CN 104681502 A CN104681502 A CN 104681502A
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Prior art keywords
load connecting
power semiconductor
high power
semiconductor devices
connecting element
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CN104681502B (zh
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A·波佩斯库
H·库拉斯
P·格拉斯彻尔
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Semikron GmbH and Co KG
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Abstract

本发明涉及一种大功率半导体装置，其具有基板和布置在基板上并与该基板相连的大功率半导体结构元件，其中，大功率半导体装置具有构成结构单元的负载连接装置和壳体，该壳体具有包括凹口的第一壳体件，其中，用于电接触大功率半导体装置的负载连接装置具有穿过凹口延伸的导电的第一负载连接元件，该第一负载连接元件具有布置在壳体外部的外部连接区段和布置在壳体内部的内部连接区段，其中，负载连接装置具有压力元件，外部连接区段穿过该压力元件延伸并且该压力元件与外部连接区段材料配合地连接，其中，大功率半导体装置具有压合接头，该压合接头相对于第一壳体件的外侧挤压压力元件并且使压力元件与第一壳体件的内侧相连。

Description

大功率半导体装置
技术领域
本发明涉及一种大功率半导体装置。
背景技术
在由现有技术已知的大功率半导体装置中，通常在基板上布置有多个大功率半导体结构元件，例如大功率半导体开关和二极管并且借助基板的导电层以及焊线和/或薄膜复合层相互导电地连接。对此，大功率半导体开关通常以晶体管、例如IGBTs(Insulated Gate Bipolar Transistor)或者MOSFETs(Metal Oxide Semiconductor Field Effect Transistor)的形式存在，或者以闸流晶体管的形式存在。
对此，布置在基板上的大功率半导体结构元件通常电联接到单个或多个所谓的半桥电路，该半桥电路例如用于整流和逆变电压和电流。
符合技术标准的大功率半导体装置具有负载连接元件以用于引导负载电流，大功率半导体装置借助该负载连接元件与外部组件导电地连接。与例如用于操纵大功率半导体开关的辅助电流不同，负载电流对此通常具有高的电流强度。通常来说，负载连接元件必须被引导穿过大功率半导体装置的壳体。对此，通常必须要求保护大功率半导体装置例如以免被溅水(例如IP54)，因此必须使负载连接元件相对于壳体受到密封。在符合技术标准的大功率半导体装置中，引导负载连接元件穿过壳体的凹口并且随后借助硅酮密封材料和/或其它的密封件相对于壳体密封负载连接元件，这一方面非常耗时并且另一方面通常有导致密封不充分的缺陷。
发明内容
本发明的目的是提供一种大功率半导体装置，其能够以经济的方式被制造并且在该大功率半导体装置中相对于其壳体使至少一个负载连接元件受到可靠地密封。
通过具有基板和布置在基板上并且与该基板相连的大功率半导体结构元件的大功率半导体装置实现了该目的，其中，大功率半导体装置具有构成结构单元的负载连接装置和壳体，该壳体具有包括凹口的第一壳体件，其中，用于电接触大功率半导体装置的负载连接装置具有穿过凹口延伸的导电的第一负载连接元件，该第一负载连接元件具有布置在壳体外部的外部连接区段和布置在壳体内部的内部连接区段，其中，负载连接装置具有压力元件，外部连接区段穿过该压力元件延伸并且该压力元件与外部连接区段材料配合地连接，其中，大功率半导体装置具有压合接头，该压合接头相对于第一壳体件的外侧挤压压力元件并且使压力元件与第一壳体件的内侧相连。
本发明的有利的设计方案由从属权利要求给出。
已证实，这样构造压合接头是有利的，使压力元件具有穿过凹口延伸到壳体内部的保持元件，其中楔形元件布置在保持元件和第一壳体件内侧之间，该楔形元件抵压保持元件并且抵压第一壳体件的内侧，因为压力元件借助于楔形元件以大的作用力抵压第一壳体件的外侧并因此能够实现特别可靠的密封。
还证实，楔形元件借助卡锁连接固定在保持元件上是有利的。由此可靠地避免楔形元件被推出。
还证实，压合接头构造为卡锁连接件是有利的，因为这样大功率半导体装置能够特别简单地构造并且特别经济地制成。
此外证实，压力元件由热塑性塑料或者热固性塑料构成是有利的，因为这样压力元件能够特别简单地制成。
还证实，在压力元件和第一壳体件的外侧之间布置封闭地环绕负载连接装置的第一负载连接元件的密封件是有利的。由此实现了特别可靠的密封。
还证实，压力元件与外部连接区段材料配合地直接连接是有利的，因为这样使负载连接装置能够特别简单地制成。
此外证实有利的是，压力元件与外部连接区段材料配合地连接，即，通过在压力元件和外部连接区段之间布置弹性体，该弹性体使得压力元件与外部连接区段材料配合地连接。由此实现了特别可靠的密封。
还证实有利的是，用于电接触大功率半导体装置的负载连接装置具有穿过凹口延伸的导电的第一负载连接元件和第二负载连接元件，该第一负载连接元件和第二负载连接元件分别具有布置在壳体外部的外部连接区段和布置在壳体内部的内部连接区段，其中，负载连接装置具有压力元件，各个负载连接元件的外部连接区段穿过该压力元件延伸并且该压力元件与各个负载连接元件的外部连接区段材料配合地连接。由此提供了这样的大功率半导体装置，其能够经济地制造的并且使得至少两个负载连接元件相对于大功率半导体装置的壳体可靠地受到密封。
还证实有利的是，用于电接触大功率半导体装置的负载连接装置具有穿过凹口延伸的导电的第一负载连接元件、第二负载连接元件和第三负载连接元件，该第一负载连接元件、第二负载连接元件和第三负载连接元件分别具有布置在壳体外部的外部连接区段和布置在壳体内部的内部连接区段，其中，负载连接装置具有压力元件，各个负载连接元件的外部连接区段穿过该压力元件延伸并且该压力元件与各个负载连接元件的外部连接区段材料配合地连接。由此提供了这样的大功率半导体装置，其能够经济地制造的并且使得至少三个负载连接元件相对于大功率半导体装置的壳体可靠地受到密封。
还证实有利的是，在大功率半导体装置工作过程中，第一负载连接元件具有正电位并且第二负载连接元件具有负电位。第一和第二负载连接元件能够如此地构造为直流电压负载连接元件。
此外证实，压力元件与各个负载连接元件的外部连接区段材料配合地直接连接是有利的，因为这样能够特别简单地制造负载连接装置。
此外证实有利的是，压力元件与各个负载连接元件的外部连接区段材料配合地连接，即，通过在压力元件和各个负载连接元件的外部连接区段之间布置弹性体，该弹性体使得压力元件与各个负载连接元件的外部连接区段材料配合地连接。由此实现了特别可靠的密封。
还证实，在压力元件和第一壳体件的外侧之间布置封闭地环绕负载连接装置的负载连接元件的密封件是有利的。由此实现了特别可靠的密封。
附图说明
本发明的实施例在附图中示出并且在下面进行详细阐述。在附图中：
图1示出了根据本发明的大功率半导体装置的立体前视图，其中未示出大功率半导体装置的负载连接装置；
图2示出了构成结构单元的负载连接装置的立体示意图；
图3示出了根据本发明的具有负载连接装置的大功率半导体装置的立体前视图；
图4示出了图3的详细视图；
图5示出了负载连接装置的另一个结构方案的立体示意图；
图6示出了根据本发明的具有负载连接装置的大功率半导体装置的立体后视图；
图7示出了图6的详细视图；
图8示出了根据本发明的具有负载连接装置的大功率半导体装置的局部立体前视图；
图9示出了楔形元件的立体示意图，该楔形元件与卡锁元件相连；
图10示出了楔形元件的侧视图，该楔形元件与卡锁元件相连；
图11示出了根据本发明的大功率半导体装置的基板和大功率半导体装置的与该基板相连的元件的示意性剖面图；
图12示出了压力元件的压板连同环绕的密封件的后视图；
图13示出了作为卡锁连接件的压合接头的构造方案的剖面图；
图14示出了根据本发明的大功率半导体装置的另一个构造方案的立体前视图；
图15示出了楔形元件的另一个构造方案的立体示意图，该楔形元件与卡锁元件相连；以及
图16示出了根据本发明的大功率半导体装置的第二壳体件。
在附图中，相同的元件配有相同的附图标记。
具体实施方式
图1示出了根据本发明的大功率半导体装置1的立体前视图，其中未示出大功率半导体装置1的负载连接装置2。图2示出了构成结构单元的负载连接装置2的立体示意图。图3示出了根据本发明的具有负载连接装置2的大功率半导体装置1的立体前视图，其中，图4示出了图3的详细视图。图11示出了根据本发明的大功率半导体装置1的基板19和大功率半导体装置1的与基板19相连的元件的示意性剖面图。
大功率半导体装置1具有壳体，该壳体具有包括凹口10的第一壳体件9，该第一壳体件优选从侧面包围大功率半导体装置1的大功率半导体结构元件22。在本实施例的范围中，大功率半导体装置1的壳体具有第二壳体件33，该第二壳体件优选构成第一壳体件9的盖(参见图16)。需要指出，根据本发明的大功率半导体装置的壳体也能够仅具有单一的壳体件并因此也能够仅由第一壳体件构成，或者也能够具有如第一和第二壳体件那样的更多的壳体件。在第二壳体件33上布置有环绕的密封环34，在第二壳体件33布置在第一壳体件9上并且与该壳体件9相连时，该密封环使第二壳体件33相对于第一壳体件9密封。第二壳体件33在本实施例的范围中借助卡锁连接与第一壳体件9相连，对此为了清楚起见，在附图中未示出构成相应卡锁连接的元件。第一壳体件9和第二壳体件33优选由热塑性材料构成。优选由第一壳体件9的材料以侧面封闭的方式包围凹口10。
在本实施例的范围中，在大功率半导体装置1的第一壳体件9中布置有三个大功率半导体模块14。大功率半导体模块14分别在其大功率半导体模块壳体的内部具有图11所示的用于产生单相交流电压的布置。
需要指出，在本实施例的范围中，借助大功率半导体装置1或者说是三个大功率半导体模块14将直流电压逆变为3相交流电压，或者将3相交流电压整流成直流电压。对此，接下来的描述在基板和对应于基板的元件方面、针对单相交流电压的产生示例性地说明大功率半导体装置1的构造。在本实施例的范围中，基板19或者说图11所示的用于产生单相交流电压的布置在此以相同的实施方案设置三次，因此如上所述，在大功率半导体装置1的本实施例中由直流电压产生3相交流电压，或者将3相交流电压整流成直流电压。大功率半导体装置1，确切地说是大功率半导体模块14具有基板19和布置在基板19上并且与基板19相连的大功率半导体结构元件22。各个大功率半导体结构元件优选以大功率半导体开关或者二极管的形式存在。对此，大功率半导体开关通常以晶体管、例如IGBTs(InsulatedGate Bipolar Transistor)或者MOSFETs(Metal Oxide Semiconductor FieldEffect Transistor)的形式、或者以闸流晶体管的形式存在。
基板19具有绝缘材料体25和布置在绝缘材料体25的第一侧面上并且与绝缘材料体25相连的导电的经结构化的第一线路层20，该第一线路层在本实施例的范围中构成导体电路21。优选地，基板19具有导电的优选未经结构化的第二线路层24，其中，绝缘材料体25布置在经结构化的第一线路层20和第二线路层24之间。基板19如在本实施例中一样能够以Direct Copper Bonded Substrat(DCB-直接键合铜的基板)的形式或者Insulated Metal Substrat(IMS绝缘金属基板)的形式存在。
大功率半导体装置1在本实施例的范围中具有第一负载连接元件3和第二负载连接元件4以使大功率半导体装置与外部的、电气的线路装置(例如导电的汇流排或电缆)电接触。借助第一负载连接元件3和第二负载连接元件4引导负载电流通过大功率半导体装置1的壳体。
大功率半导体装置1还具有导电的连接件18或者说18’，该连接件将基板19、确切地说是基板19的第一线路层20与导电的第一负载连接元件3或者第二负载连接元件4连接。在本实施例中，连接件18在此引导交流电，而连接件18’引导直流电。如图4和图7所示，在本实施例中第一负载连接元件3或者第二负载连接元件4与连接件18或者说连接件18’相连。相应的第一负载连接元件3或者第二负载连接元件4与至少一个大功率半导体结构元件22导电地连接。但是，相应的第一负载连接元件3或者第二负载连接元件4也可以例如直接与基板19或者与大功率半导体结构元件22连接。优选地，上述元件之间的连接分别实现为材料配合的连接(例如钎焊连接或者烧结连接)或者传力连接，其中，图11中各个连接层配有附图标记12。对此，在大功率半导体结构元件构造为大功率半导体开关时，与例如用于操纵大功率半导体结构元件的辅助电流不同，流过第一负载连接元件3和第二负载连接元件4的负载电流通常具有高的电流强度。
进一步需要指出，大功率半导体结构元件22在其远离基板19的一侧上例如借助焊线和/或薄膜复合层相互连接并且根据所希望的、应该实现大功率半导体装置1的电路与基板19的导体电路21导电地相互连接。为了清楚起见图11未示出这些电连接。
如图1所示，各个大功率半导体模块14具有控制端子元件41，其用于操纵在本实施例中构造为大功率半导体开关的大功率半导体结构元件22。
大功率半导体装置1具有负载连接装置2，该负载连接装置分别构造为结构单元(参见图2)。负载连接装置2在安装大功率半导体装置1时被引入凹口10中。图3和图4示出了具有引入凹口10中的负载连接装置2的大功率半导体装置1。
各个负载连接装置2具有穿过各个凹口10延伸的导电的第一负载连接元件3以电接触大功率半导体装置1，该第一负载连接元件具有布置在大功率半导体装置1的壳体外部的外部连接区段3a和布置在大功率半导体装置1的壳体内部的内部连接区段3b。此外，负载连接装置2具有优选一件式形成的压力元件7，外部连接区段3a穿过该压力元件延伸，并且该压力元件与外部连接区段3a材料配合地连接。大功率半导体装置1具有压合接头35或者35’(参见图4或图13)，该压合接头相对于第一壳体件9的外侧16挤压压力元件7，并且使压力元件7与第一壳体件9的内侧15相连。压力元件7具有布置在大功率半导体装置1的壳体外部的压板29，其中，压合接头35或者35’相对于第一壳体件9的外侧16挤压压板29。压力元件7优选一件式构成。压力元件7优选由热塑性塑料或者热固性塑料构成。
如图4示例性所示，这样构造压合接头35，压力元件7具有穿过凹口10延伸的、伸入大功率半导体装置1的壳体内部的保持元件8，其中，楔形元件17布置在保持元件8和第一壳体件9的内侧15之间，该楔形元件压住保持元件8以及第一壳体件9的内侧15。压板29优选与保持元件8一件式地构造。楔形元件17在图9和图10中示出。楔形元件17优选借助卡锁连接定位在保持元件8上。为了实现该卡锁连接，使楔形元件17与卡锁元件23连接，该卡锁元件卡合到保持元件8中。保持元件8在此优选具有凹口27，卡锁元件23卡合到该凹口中。楔形元件17优选与卡锁元件23一件式构造。在本实施例中，楔形元件17如此地通过多个卡锁元件23与保持元件8相连。
如图12示例性地示出，优选在压力元件7和第一壳体件9的外侧16之间、特别是在压力元件7的压板29和第一壳体件9的外侧16之间布置有封闭环绕第一负载连接元件3的密封件28。密封件28优选由弹性材料、例如硅酮或者橡胶构成。密封件28能够与压力元件7、特别是与压力元件7的压板29材料配合地相连(参见图12)或者与第一壳体件9材料配合地相连。替代性地，密封件28也能够以单独的密封件的形式(例如作为密封环)实现，在安装大功率半导体装置1时，该密封件置于压力元件7、特别是压力元件7的压板29和第一壳体件9之间。
在本实施例中，通过在压力元件7和外部连接区段3a之间、特别是在压力元件7的压板29和外部连接区段3a之间布置使压力元件7与外部连接区段3a材料配合地连接的弹性体5，使得压力元件7与外部连接区段3a材料配合地相连。弹性体5优选在侧面封闭环绕第一负载连接元件3的外部连接区段3a。弹性体5优选侧面地包住第一负载连接元件3的外部连接区段3a。优选地，弹性体5额外地在侧面封闭环绕第一负载连接元件3的内部连接区段3b。在外部连接区段3a和内部连接区段3b的端部区域上没有弹性体5。在本实施例的范围中，外部连接区段3a的端部区域具有设有内螺纹的孔11，借助该孔通过螺纹连接能够使外部的电气的线路装置(例如导电的汇流排或者电缆)与负载连接元件3以及特别是与外部连接区段3a电接触。弹性体5优选以硅酮构成。硅酮优选以可交联的液体硅橡胶的形式或者以可交联的固体硅橡胶的形式存在。
替代性地，压力元件7在此也可以与第一负载连接元件3的外部连接区段3a材料配合地直接连接，即，压力元件7、特别是压力元件7的压板29与外部连接区段3a有接触。压力元件7、特别是压力元件7的压板29在这种情况下优选在侧面封闭环绕地与第一负载连接元件3的外部连接区段3a直接连接。对此优选在制造压力元件7时，使外部连接区段3a一起注塑在压力元件7中。压力元件7、特别是压力元件7的压板29优选在侧面包围第一负载连接元件3的外部连接区段3a。
图5示出了负载连接装置2的另一个构造方案的立体示意图。图5所示的负载连接装置2除了下述特征以外与图2所示的负载连接装置2相一致，即，图5所示的负载连接装置2除了上述第一负载连接元件3还具有第二负载连接元件4。图2所示的负载连接装置2的所有有利的构造方案都能够以相同的方式在图5所示的负载连接装置2上实现。图6示出了根据本发明的具有根据图5和根据图2所构造的负载连接装置2的大功率半导体装置1的立体后视图，其中，图7示出了图6的详细视图。图8示出了根据本发明的具有根据图5所构造的负载连接装置2的大功率半导体装置1的局部立体前视图。
图5所示的负载连接装置2具有穿过第一壳体件9的各个凹口10延伸的导电的第一负载连接元件3和第二负载连接元件4以电接触大功率半导体装置1，该第一负载连接元件和第二负载连接元件分别具有布置在大功率半导体装置1的壳体外部的外部连接区段3a或4a以及布置在大功率半导体装置1的壳体内部的内部连接区段3b或4b，其中负载连接装置2具有压力元件7，各个负载连接元件3或4的外部连接区段3a或4a穿过该压力元件7延伸，并且该压力元件与各个负载连接元件3或4的外部连接区段3a或4a材料配合地连接。
在压力元件7和外部连接区段4a之间、特别是在压力元件7的压板29和外部连接区段4a之间布置有弹性体6，该弹性体使得压力元件7与外部连接区段3a材料配合地连接。弹性体6对此优选与弹性体5相类似地构造并且布置。弹性体6能够与弹性体5一件式构成。
对此可替代地，压力元件7也能够与第二负载连接元件4的外部连接区段4a材料配合地直接连接，即，压力元件7、特别是压力元件7的压板29与外部连接区段4a有接触。压力元件7、特别是压力元件7的压板29在这种情况下优选在侧面封闭环绕地与第二负载连接元件4的外部连接区段4a直接连接。对此优选在压力元件7的制造过程中，将外部连接区段4a一起注塑在压力元件7中。压力元件7、特别是压力元件7的压板29优选侧面地包围第二负载连接元件4的外部连接区段4a。
在图2所示的负载连接装置2中，优选在大功率半导体装置1的工作过程中第一负载连接元件3具有交流电压电位。在图5所示的负载连接装置2中，优选在大功率半导体装置1的工作过程中第一负载连接元件3具有正电位并且第二负载连接元件4具有负电位。
图14示出了根据本发明的大功率半导体装置1以及负载连接装置2的另一个构造方案的立体前视图。图14所示的负载连接装置2除了下述特征以外与图2所示的负载连接装置2相一致，即，图14所示的负载连接装置2除了上述第一负载连接元件3还具有第二负载连接元件4和第三负载连接元件31。如图14中前侧可以看出，负载连接装置2除了第一、第二和第三负载连接元件3、4和31还具有更多负载连接元件。图2所示的负载连接装置2的所有有利的构造方案都能够以相同的方式在图14所示的负载连接装置2上实现。那么例如以如在第一负载连接元件3中相同的方式在第三负载连接元件31上布置弹性体36，其中，该弹性体36如弹性体5一样地构造。对此可替代地，如同图2所示的压力元件7能够与第一负载连接元件3的外部连接区段3a材料配合地直接连接那样，图14所示的压力元件7能够同样以相同的方式与第三负载连接元件31的外部连接区段31a材料配合地直接连接。图15示出了与根据图14的负载连接装置2的构造所对应的、楔形元件17和与楔形元件17相连的卡锁元件23的另一个构造方案的立体示意图。在图14中用盖板32遮盖大功率半导体装置1的三个大功率半导体模块14。
可以看出，图9和图10所示的楔形元件17和卡锁元件23的有利的构造方案对于本发明的所有构造方案当然都能够实现。
图14所示的负载连接装置2为了与大功率半导体装置1电接触而具有穿过第一壳体件9的各个凹口延伸的导电的第一载连接元件3、第二载连接元件4和第三负载连接元件31，这些负载连接元件分别具有布置在大功率半导体装置1的壳体外部的外部连接区段3a、4a或31a以及布置在大功率半导体装置1的壳体内部的内部连接区段3b、4b或31b，其中负载连接装置2具有压力元件7，各个负载连接元件3、4或31的外部连接区段3a、4a或31a穿过该压力元件延伸，并且该压力元件材料配合地与各个负载连接元件3、4或31的外部连接区段3a、4a或31a连接。图14中第一壳体件9的各个凹口明显大于图1所示的、壳体件9的凹口10。
图13以剖面图的形式示出了压合接头的另一个构造方案，该压合接头相对于第一壳体件9的外侧16挤压负载连接装置2’的压力元件7’，并且使压力元件7’与第一壳体件9的内侧15相连。图13所示的压合接头35’借助负载连接装置2’得以实现，除了负载连接装置2’的保持元件8’构造为卡锁元件这个特征以外，该负载连接装置与上述各种负载连接装置2相一致，其中，在图13所示的截面中，负载连接元件3或者说负载连接元件3、4和/或31不可见。图13所示的压合接头35’如此地构造为卡锁连接件。负载连接装置2’的压力元件7’具有布置在大功率半导体装置1的壳体外部的压板29，其中压合接头35’相对于第一壳体件9的外侧16挤压压板29。保持元件8’卡合在第一壳体件9的内侧15上。压板29优选与保持元件8’一件式构造。压力元件7’优选由热塑性塑料或者热固性塑料构成。如图13和图12示例性地示出，优选在压力元件7’和第一壳体件9的外侧16之间、特别是在压力元件7’的压板29和第一壳体件9的外侧16之间布置封闭地环绕第一负载连接元件3或者说封闭地环绕负载连接元件3、4和/或31的密封件28。密封件28如同在图12中所述的那样布置并且构造。
在此需要指出，本发明的各种实施例的特征只要没有互相排斥，这些特征就自然能够任意地相互结合。

Claims (14)

1.大功率半导体装置，所述大功率半导体装置具有基板(19)和布置在所述基板(19)上并且与所述基板(19)相连的大功率半导体结构元件(22)，其中，所述大功率半导体装置(1)具有构成结构单元的负载连接装置(2)和壳体，所述壳体具有包括凹口(10)的第一壳体件(9)，其中，用于电接触所述大功率半导体装置(1)的负载连接装置(2)具有穿过所述凹口(10)延伸的导电的第一负载连接元件(3)，所述第一负载连接元件具有布置在壳体外部的外部连接区段(3a)和布置在壳体内部的内部连接区段(3b)，其中，所述负载连接装置(2)具有压力元件(7、7’)，所述外部连接区段(3a)穿过所述压力元件延伸并且所述压力元件与所述外部连接区段(3a)材料配合地连接，其中，所述大功率半导体装置(1)具有压合接头(35、35’)，所述压合接头相对于所述第一壳体件(9)的外侧(16)挤压所述压力元件(7、7’)并且使所述压力元件(7、7’)与所述第一壳体件(9)的内侧(15)相连。
2.根据权利要求1所述的大功率半导体装置，其特征在于，所述压合接头(35)能够使所述压力元件(7)具有穿过所述凹口(10)延伸到壳体内部的保持元件(8)，其中楔形元件(17)布置在所述保持元件(8)和所述第一壳体件(9)的内侧(15)之间，所述楔形元件抵压所述保持元件(8)并且抵压所述第一壳体件(9)的内侧(15)。
3.根据权利要求2所述的大功率半导体装置，其特征在于，所述楔形元件(17)借助卡锁连接固定在所述保持元件(8)上。
4.根据权利要求1所述的大功率半导体装置，其特征在于，所述压合接头(35’)是卡锁连接件。
5.根据前述权利要求中任意一项所述的大功率半导体装置，其特征在于，所述压力元件(7、7’)由热塑性塑料或者热固性塑料构成。
6.根据前述权利要求中任意一项所述的大功率半导体装置，其特征在于，在所述压力元件(7、7’)和所述第一壳体件(9)的外侧(16)之间布置封闭地环绕所述负载连接装置(2)的第一负载连接元件(3)的密封件(28)。
7.根据前述权利要求中任意一项所述的大功率半导体装置，其特征在于，所述压力元件(7、7’)与所述外部连接区段(3a)材料配合地直接连接。
8.根据权利要求1至6中任意一项所述的大功率半导体装置，其特征在于，通过在所述压力元件(7、7’)和所述外部连接区段(3a)之间布置弹性体(5)，所述弹性体使得所述压力元件(7、7’)与所述外部连接区段(3a)材料配合地连接，由此使所述压力元件(7、7’)与所述外部连接区段(3a)材料配合地连接。
9.根据权利要求1至5中任意一项所述的大功率半导体装置，其特征在于，用于电接触所述大功率半导体装置(1)的负载连接装置(2)具有穿过所述凹口(10)延伸的导电的第一负载连接元件(3)和第二负载连接元件(4)，所述第一负载连接元件和第二负载连接元件分别具有布置在壳体外部的外部连接区段(3a、4a)和布置在壳体内部的内部连接区段(3b、4b)，其中，所述负载连接装置(2)具有压力元件(7、7’)，各个负载连接元件(3、4)的外部连接区段(3a、4a)穿过所述压力元件延伸并且所述压力元件与各个负载连接元件(3、4)的外部连接区段(3a、4a)材料配合地连接。
10.根据权利要求9所述的大功率半导体装置，其特征在于，用于电接触所述大功率半导体装置(1)的负载连接装置(2)具有穿过凹口延伸的导电的第一负载连接元件(3)、第二负载连接元件(4)和第三负载连接元件(31)，所述第一负载连接元件、第二负载连接元件和第三负载连接元件分别具有布置在壳体外部的外部连接区段(3a、4a、31a)和布置在壳体内部的内部连接区段(3b、4b、31b)，其中，所述负载连接装置(2)具有压力元件(7、7’)，各个负载连接元件(3、4、31)的外部连接区段(3a、4a、31a)穿过所述压力元件延伸并且所述压力元件与各个负载连接元件(3、4、31)的外部连接区段(3a、4a、31a)材料配合地连接。
11.根据权利要求9或10所述的大功率半导体装置，其特征在于，在所述大功率半导体装置(1)工作过程中，所述第一负载连接元件(3)具有正电位并且所述第二负载连接元件(4)具有负电位。
12.根据权利要求9至11中任意一项所述的大功率半导体装置，其特征在于，所述压力元件(7、7’)与各个负载连接元件(3、4、31)的外部连接区段(3a、4a、31a)材料配合地直接连接。
13.根据权利要求9至11中任意一项所述的大功率半导体装置，其特征在于，通过在所述压力元件(7、7’)和各个负载连接元件(3、4、31)的外部连接区段(3a、4a、31a)之间布置弹性体(5、6、36)，所述弹性体使得所述压力元件(7、7’)与各个负载连接元件(3、4、31)的外部连接区段(3a、4a、31a)材料配合地连接，由此使所述压力元件(7、7’)与各个负载连接元件(3、4、31)的外部连接区段(3a、4a、31a)材料配合地连接。
14.根据权利要求9至13中任意一项所述的大功率半导体装置，其特征在于，在所述压力元件(7、7’)和所述第一壳体件(9)的外侧(16)之间布置封闭地环绕所述负载连接装置(2)的负载连接元件(3、4、31)的密封件(28)。
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CN101577262A (zh) * 2008-03-04 2009-11-11 英飞凌科技股份有限公司 功率半导体模块系统

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CN1921110A (zh) * 2005-08-24 2007-02-28 塞米克朗电子有限及两合公司 具有功率半导体模块和连接器的组件
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