CN104681388A - Plasma processing container and plasma processing device - Google Patents
Plasma processing container and plasma processing device Download PDFInfo
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- CN104681388A CN104681388A CN201510062189.1A CN201510062189A CN104681388A CN 104681388 A CN104681388 A CN 104681388A CN 201510062189 A CN201510062189 A CN 201510062189A CN 104681388 A CN104681388 A CN 104681388A
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- container
- seal member
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- guard block
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
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Abstract
The invention provides a plasma processing container and a plasma processing device having the same. The operation time and cost for anodizing of the plasma processing container can be greatly reduced. In the plasma processing container, a gasket (102) is inserted at the joint of a side wall (1b) and a top plate (1c), with front end thereof reaching an internal O-shaped ring (111). Plasma and corrosive gas are interrupted at the internal O-shaped ring (111), so that the plasma and corrosive gas cannot reach the place directly pressed against by the side wall (1b) and top plate (1c), and the top plate (1c) does not need anodizing.
Description
The divisional application that the application is the applying date is on April 9th, 2009, application number is 200910134905.7, denomination of invention is the patent application of " container for plasma treatment and plasma processing apparatus ".
Technical field
The present invention relates to when the handled objects such as a kind of glass substrate to such as flat-panel monitor (FPD) carry out plasma treatment and receive the container for plasma treatment of handled object and there is the plasma processing apparatus of this container for plasma treatment.
Background technology
In the FPD manufacture process being representative with liquid crystal display (LCD), under vacuo the various process such as etching, film forming are implemented to handled objects such as glass substrates.In order to utilize plasma to carry out described process, and use that have can the plasma processing apparatus of container for plasma treatment of vacuum draw.
In plasma processing apparatus, because the effect of plasma or corrosive gas can make the inner face of metal container for plasma treatment impaired.For this reason, anodized (anodized) be implemented to the main body of the container for plasma treatment of such as aluminum and improve corrosion resistance.Anodized is usually by being immersed in the container for plasma treatment or its component parts that accept process in the electrolyte containing sulfuric acid or oxalic acid.
In addition, in order to prevent the damage of container for plasma treatment, also arrange guard block (liner: liner) at the internal face of container for plasma treatment.Such as in patent documentation 1, the internal face along the transport mouth being formed in container for plasma treatment arranges can the liner of dismounting.Form the oxide scale film that make use of anodized on the surface of liner or there is the corrosive sputtered films of bismuth of anti-plasma, improving the durability of plasma or corrosive gas.But, plasma or corrosive gas can move into its dorsal part gap of container for plasma treatment (itself and) from the end of liner of the inner face being arranged on container for plasma treatment, even if so when being configured with liner, for container for plasma treatment, anodized can not be omitted.
Patent documentation 1: No. WO2002/29877, International Publication
In recent years, require to strengthen to the maximization of the substrate of FPD, correspondingly, container for plasma treatment also has the tendency of maximization.Also manufacture now with while the container for plasma treatment that is handling object more than the huge substrate of 2m, so large-scale container for plasma treatment is difficult to carry out anodized.In addition, activity duration and cost for implementing anodized on large-scale container for plasma treatment also become larger burden.
Summary of the invention
The present invention researches and develops in view of the above problems, its object is to anodized desired operating time and the cost of doing one's utmost to alleviate container for plasma treatment.
Container for plasma treatment of the present invention, it forms storage handled object and carries out the process chamber of plasma treatment, it is characterized in that having:
Engage the container body of multiple container component parts;
Be disposed in the first seal member of the bonding part between described container component parts;
Be arranged on the inner face of described container body and protect the guard block of described container body,
Bonding part between described container component parts is provided with by being inserted until arrive the position of described first seal member and make the first sealing that described first seal member and described guard block abut from described inner treatment chamber by described guard block.
Container for plasma treatment of the present invention, it is preferably provided with in the mode of surrounding described first seal member the second sealing directly getting involved described second seal member between described container component parts in the outside of this first seal member.In this case, preferably by described first sealing blocking plasma and/or corrosive gas, the air-tightness of described container body is maintained by described second sealing.In addition, preferably described first seal member is different with the material of described second seal member, and described first seal member is made up of plasma and/or the indefatigable material of corrosive gas tool.
In addition, in container for plasma treatment of the present invention, preferred described guard block is embedded in the recess on arbitrary parts of being formed in two engaged parts, makes the surface of the composition surface between described parts and described guard block form the same face.
In addition, at container for plasma treatment of the present invention, the surface of preferred described guard block is by the oxidation overlay film utilizing anodized to be formed or have the corrosive ceramic spray plated film covering of anti-plasma.
Plasma processing apparatus of the present invention is characterised in that, has above-mentioned container for plasma treatment.
(invention effect)
According to container for plasma treatment of the present invention; form the structure with the first such sealing, it is the bonding part between two container component parts, arranges the first seal member; guard block is inserted the position arriving this first seal member, make the first seal member abut guard block.According to sealing structure, plasma or corrosive gas are interdicted by the first sealing.Therefore, plasma and corrosive gas can not arrive the composition surface that two container component parts directly abut.Therefore, about at least one party in engaged container component parts, do not need anodized, the time needed for anodized and cost can be suppressed.Therefore, it is possible to play reduction became in the past large burden, the operating time needed for anodized of container for plasma treatment and the effect of cost.
Accompanying drawing explanation
Fig. 1 is the profile of the schematic configuration of the plasma-etching apparatus representing the first execution mode of the present invention.
Fig. 2 is the important part profile of the part A of Watch with magnifier diagram 1.
Fig. 3 is the profile of the schematic configuration of the plasma-etching apparatus representing the second execution mode of the present invention.
Fig. 4 is the important part profile of the plasma-etching apparatus of the 3rd execution mode of the present invention.
Description of reference numerals
1 container handling
1a diapire
1b sidewall
1c top board
2 bottom container
3 insulating elements
5 supporting bodies
7 base materials
51 exhaust outlets
61 substrate transport openings
100 plasma-etching apparatus
101 liners
102 liners
O type ring inside 111
O type ring outside 112
113 O type ring arranging grooves
114 recesses
Embodiment
Below, the execution mode that present invention will be described in detail with reference to the accompanying.See figures.1.and.2, be described about the container for plasma treatment of present embodiment and the plasma-etching apparatus 100 with this container for plasma treatment.Fig. 1 is the profile of the schematic configuration representing plasma-etching apparatus 100.Plasma-etching apparatus 100 is configured to the device such as glass substrate (hereinafter referred to as " the substrate ") S of FPD being carried out to plasma etch process.In addition, liquid crystal display (LCD), electroluminescent (Electro Luminescence:EL) display, plasma display (PDP) etc. are illustrated as FPD.
As shown in Figure 1, plasma-etching apparatus 100 is configured to the parallel flat plasma-etching apparatus to the capacitively coupled that the substrate S being formed as rectangle etches.This plasma-etching apparatus 100 has the container handling (container body) 1 being configured as square tube shape be made up of the aluminium that such as surface is oxidized anodically process.For the container handling 1 of vacuum tank is made up of the bottom container 2 of sidewall 1b and top board 1c with diapire 1a and four directions as container component parts.The bottom container 2 with diapire 1a and sidewall 1b is such as one-body molded by cut etc. is box, and effects on surface implements anodized.At the inner face of sidewall 1b, in order to the impact of protective side wall 1b not subject plasma and corrosive gas, be equipped with the liner 101 as the guard block forming tabular.
Top board 1c can by not shown switching mechanism opening and closing relative to bottom container 2.Top board 1c inner face (below), in order to protect the impact of top board 1c not subject plasma or corrosive gas, and be equipped with the liner 102 as the guard block forming tabular.Under the state of closing top board 1c, in the bonding part of top board 1c and sidewall 1b, the position of the inside near container handling 1 arranges the inner side O type ring 111 as the first seal member, arranges the outside O type ring 112 as the second seal member in the mode of surrounding O type ring 111 inside this.That is, by making inner side O type ring 111 and the dual arranging of outside O type ring 112, thus the hermetically-sealed construction of the bonding part of top board 1c and sidewall 1b is formed.Hermetically-sealed construction about this part is aftermentioned.In addition, in the present embodiment, because bottom container 2 (diapire 1a and sidewall 1b) is integrally formed, so, by sealing inner side O type ring 111 and the outside O type ring 112 of the bonding part of top board 1c and sidewall 1b, under the state of closing top board 1c, keep the air-tightness of the container handling 1 as vacuum tank.
Bottom in container handling 1 is configured with the insulating element 3 of shaped as frame shape.Insulating element 3 is provided with the supporting body 5 as the mounting table that can load substrate S.
Also the supporting body 5 as lower electrode has base material 7.Base material 7 is such as made up of conductive materials such as aluminium or stainless steels (SUS).Base material 7 is configured on insulating element 3, and the bonding part of two parts arranges the seal members 13 such as O type ring, maintains air-tightness.Also air-tightness is maintained by seal member 14 between the diapire 1a of insulating element 3 and container handling 1.The sidepiece periphery of base material 7 is surrounded by insulating element 17.Thus, guarantee the insulating properties of the side of supporting body 5, prevent paradoxical discharge during plasma treatment.
Above supporting body 5 with this supporting body 5 abreast and be relatively provided with the spray head 31 played as the effect of upper electrode.Spray head 31 is supported on the top board 1c on the top of container handling 1.Spray head 31 forms hollow form, is provided with gas diffusion space 33 therein.In addition, below spray head 31, (opposite face of supporting body 5) forms multiple gas squit holes 35 of ejection process gas.This spray head 31 ground connection, forms pair of parallel plate electrode together with supporting body 5.
Gas introduction port 37 is provided with near the center upper portion of spray head 31.Process gas supply pipe 39 is connected at this gas introduction port 37.Be connected to the supplies for gas 45 supplied for the process gas etched via two valves 41,41 and mass flow controller 43 at this process gas supply pipe 39.As outside process gas such as halogen class G&O, the rare gas etc. such as argon Ar can also be used.
Four angles of the bottom of described container handling 1 form exhaust outlet 51 everywhere.Exhaust outlet 51 is connected to blast pipe 53, and this blast pipe 53 is connected with exhaust apparatus 55.Exhaust apparatus 55 has the vacuum pumps such as such as turbomolecular pump, can will be vacuum-drawn against the reduced atmosphere of regulation thus in container handling 1.
In addition, the sidepiece 1b of a side of container handling 1 is provided with the substrate transport opening 61 as the peristome be formed through with this sidepiece 1b.This substrate transport with opening 61 by the family of power and influence's (omit diagram) opening and closing.Further, be transported into via substrate transport opening 61 under the state opened this family of power and influence and transport substrate S.In addition, other sidepieces 1b of container handling 1 is provided with the window opening 63 as the peristome being formed through sidepiece 1b.At each window opening 63, transparent quartz plate 65 is installed.
Supply lines 71 is connected with at the base material 7 of supporting body 5.This supply lines 71 is connected with high frequency electric source 75 via matching box (M.B.) 73.Thus, the High frequency power of such as 13.56MHz is supplied from high frequency electric source 75 to the supporting body 5 as lower electrode.In addition, supply lines 71 imports in container handling via the opening 77 being formed in diapire 1a.
In addition, the baffle plate 81 as the cowling panel of the air-flow in control treatment container 1 is provided with in the side of supporting body 5.Baffle plate 81 is corresponding with four limits of the supporting body 5 of planar shape arranges four.The insulation wall 83 that each baffle plate 81 is uprightly arranged by the diapire 1a from container handling 1 and the approximate horizontal supporting of insulation wall 85.The process gas supplied towards the substrate S supporting body 5 from the gas squit hole 35 of spray head 31 spreads to four directions on the surface of substrate S, by the rectified action of baffle plate 81, form air-flow towards the bottom exhaust outlet 51 being everywhere located at container handling 1 and be vented simultaneously.
Then, the process action of the above plasma-etching apparatus 100 formed is described.First, under the state of the open not shown family of power and influence, the substrate S as handled object is transported into via substrate transport opening 61 by not shown conveyer in container handling 1, joins to supporting body 5.Afterwards, closing the family of power and influence, is the vacuum degree of regulation by vacuum draw in container handling 1 by exhaust apparatus 55.
Then, relief valve 41, imports process gas via process gas supply pipe 39, gas introduction port 37 to the gas diffusion space 33 of spray head 31 from supplies for gas 45.At this moment, carry out by mass flow controller 43 flow control processing gas.The process gas importing gas diffusion space 33 evenly sprays to the substrate S be placed on supporting body 5 via multiple ejiction opening 35 further, and the pressure in container handling 1 maintains setting.
High frequency power is applied from high frequency electric source 75 via matching box 73 pairs of supporting bodies 5 under this state.Thus, between the supporting body 5 as lower electrode and the spray head 31 as upper electrode, produce high-frequency electric field, process gaseous dissociation and plasmarized.By this plasma, etch processes is implemented to substrate S.
After implementing etch processes, stop applying High frequency power from high frequency electric source 75, stop gas importing, afterwards, by decompression in container handling 1 to the pressure of regulation.Then, the open family of power and influence, from supporting body 5 to not shown conveyer handing-over substrate S, transports from the substrate transport opening 61 of container handling 1.By above operation, terminate the etch processes to substrate S.
Fig. 2 amplifies the profile representing sidewall 1b and the bonding part of top board 1c and the part A of Fig. 1.As previously mentioned, the bonding part of sidewall 1b and top board 1c is by the O type ring 111 of inner side and O type ring 112 dual-seal in outside.The inner side O type ring 111 be made up of rubber or fluorine-type resin elastomeric material and outside O type ring 112 to be arranged on this O type ring arranging groove 113 to embed the state being formed in the O type ring arranging groove 113 of the upper end of sidewall 1b respectively.
The liner 101 of the inner face of protective side wall 1b can be arranged on sidewall 1b removably.The liner 102 of the inner face of protection top board 1c can be arranged on top board 1c removably.Liner 102 is formed in the recess 114 below top board 1c with being embedded with step difference, forms a face below the surface of liner 102 and top board 1c.The method that liner 101,102 is arranged on sidewall 1b and top board 1c is not particularly limited, such as, also can install with fixed forms such as bolts.
The liner 102 being arranged on top board 1c abuts with the upper end of the liner 101 being arranged on sidewall 1b, and liner 101 and liner 102 section are seen and formed the configuration of T font.As liner 101 and liner 102, can obtain by implementing anodized (anodized) to the surface of aluminium base.In addition, as liner 101 and liner 102, preferably use and the structure with the corrosive ceramic spray plated film of anti-plasma is formed to substrate surfaces such as aluminium.Such as Y can be used as having the corrosive ceramic spray plated film of anti-plasma
2o
3sputtered films of bismuth, YF
3sputtered films of bismuth, AL
2o
3sputtered films of bismuth, B
4c sputtered films of bismuth etc.This wherein more preferably has the corrosive Y of outstanding anti-plasma
2o
3sputtered films of bismuth or YF
3sputtered films of bismuth.
In the bonding part of sidewall 1b and top board 1c, liner 102 inserts between sidewall 1b and top board 1c from the inner side of container handling 1, and its front end arrives inner side O type ring 111.That is, in the bonding part of sidewall 1b and top board 1c, inner side O type ring 111 does not abut top board 1c, and abuts liner 102, forms the first sealing.By this first sealing at this position blocking plasma or corrosive gas.Like this, inner side O type ring 111 mainly has the function in the gap of the bonding part preventing plasma or corrosive gas intrusion sidewall 1b and top board 1c, namely has the function of blocking plasma or corrosive gas.On the other hand, outside O type ring 112 directly, between sidewall 1b and top board 1c, guarantees the sealing of the bonding part of two parts, mainly has and keeps the bubble-tight vacuum of the container handling 1 as vacuum chamber to keep function.
Inner side O type ring 111 also can be identical material with outside O type ring 112.But, there is as the material prioritizing selection plasma being O type ring 111 inside main purpose with the function of interdicting plasma and gas and corrosive gas material such as silicon rubber, the perfluoroelastomers (perfluoroelastomers) of excellent patience.On the other hand, as the material of the outside O type ring 112 that keeps function to be main purpose with vacuum, such as, from the viewpoint of gas transmissivity low and cheapness, preferred fluorine class rubber.Like this, according to the difference of the inner side O type ring 111 of dual arranging and the function of outside O type ring 112, and by selecting most suitable material, can the effect of inner side O type ring 111 and outside O type ring 112 be performed to greatest extent, and can the easy deteriorated O type ring of Long-Time Service.
In the connected structure shown in Fig. 1 and Fig. 2, plasma and corrosive gas are interdicted in the position of inner side O type ring 111.Therefore, plasma and corrosive gas can not arrive the joint interface that sidewall 1b and top board 1c directly abuts, the equipping position that such as can not arrive the outside O type ring 112 that vacuum keeps.Therefore, top board 1c can not be exposed to plasma or corrosive gas, does not need anodized completely.Therefore, in the plasma-etching apparatus 100 of present embodiment, the time needed for anodized and the cost of top board 1c can be suppressed.
(the second execution mode)
Then, with reference to Fig. 3, the second execution mode of the present invention is described.Fig. 3 is the profile of the schematic configuration of the plasma-etching apparatus 200 representing the second execution mode of the present invention.In the plasma-etching apparatus 100 of the first execution mode, one-body molded and the effects on surface of diapire 1a and sidewall 1b is used to implement the bottom container 2 of anodized, but in the plasma-etching apparatus 200 of present embodiment, form diapire 1a by plate-shaped member respectively, form sidewall 1b by square cartridge.Below, by with the difference of the first execution mode (Fig. 1) centered by illustrate, use identical Reference numeral to identical structure, the description thereof will be omitted.In addition, in figure 3, the diagram of baffle plate 81, insulation wall 83 and insulation wall 85 is omitted.
In present embodiment, as shown in Figure 3, diapire 1a is formed recess 121, embed liner 122 at this and arrange, arrange the inner side O type ring 131 as the first seal member in the bonding part of diapire 1a and sidewall 1b, arrange the outside O type ring 132 as the second seal member in the mode of surrounding inner side O type ring 131 further.That is, by by inner side O type ring 131 and the dual arranging of outside O type ring 132, thus the hermetically-sealed construction of the bonding part of diapire 1a and sidewall 1b is formed.
Liner 122 inserts the junction of diapire 1a and sidewall 1b from the inner side of container handling 1, and its front end arrives the O type ring 131 of inner side.That is, in the bonding part of diapire 1a and sidewall 1b, liner 122 directly abuts inner side O type ring 131, forms the first sealing, at this position blocking plasma and corrosive gas.Like this, inner side O type ring 131 mainly has and prevents plasma and corrosive gas from invading function in the gap of the bonding part of diapire 1a and sidewall 1b, namely has the function of blocking plasma and corrosive gas.On the other hand, outside O type ring 132 directly, between diapire 1a and sidewall 1b, forms the second sealing, guarantees the sealing of the bonding part of two parts, mainly has the vacuum maintenance function of airtight maintenance as the inner space of the container handling 1 of vacuum chamber.
The sidewall 1b of present embodiment is identical with the first execution mode with the connected structure of top board 1c.
In the connected structure of the diapire 1a shown in Fig. 3 and sidewall 1b, plasma and corrosive gas are interdicted in the position of inner side O type ring 131.Therefore, plasma and corrosive gas can not arrive the joint interface that diapire 1a and sidewall 1b directly abuts, the equipping position such as seldom arriving the outside O type ring 132 that vacuum keeps.Therefore, the anodized about diapire 1a does not need completely, can suppress the time needed for anodized and the cost of diapire 1a.In addition, in present embodiment, in the same manner as the first execution mode, do not need the anodized of top board 1c yet.In addition, in the present embodiment, sidewall 1b is formed, so the inner face that also can obtain oppose side wall 1b also easily carries out the secondary effects of anodized by square cylindrical part.
Other structures in present embodiment, effect are identical with the first execution mode.
(the 3rd execution mode)
Then, with reference to Fig. 4, the 3rd execution mode of the present invention is described.Present embodiment is the variation of the above-mentioned first and second execution mode, except changing the equipping position of the second seal member, intactly can be suitable for the plasma-etching apparatus 100,200 of first and second execution mode.Below, by with the difference of the first and second execution mode (Fig. 1 and Fig. 2) centered by be described, identical Reference numeral is suitable for identical structure, omits the description.
Fig. 4 is the profile amplifying the bonding part representing sidewall 1b and top board 1c.Top board 1c inner face (below) be equipped with the liner 102 of guard block as forming tabular.In the bonding part of sidewall 1b and top board 1c, liner 102 inserts between sidewall 1b and top board 1c from the inner side of container handling 1.The position of the inside of the container handling 1 in the bonding part of top board 1c and sidewall 1b, near sidewall 1b side under the state of closing top board 1c arranges the O type ring 141 as the first seal member.O type ring 141 abuts below liner 102 and arranges.O type ring 141 mainly has the function (function of blocking plasma or corrosive gas) in the gap of the bonding part preventing plasma or corrosive gas intrusion sidewall 1b and top board 1c, and, guarantee the sealing between liner 102 and sidewall 1b, have and keep the bubble-tight vacuum of the container handling 1 as vacuum chamber to keep function.
In addition, between liner 102 and top board 1c, O type ring 142 is equipped with.O type ring 142 abuts arranging of liner 102 above.O type ring 142 guarantees the sealing of the rear side (namely between liner 102 and top board 1c) of liner 102, has and keeps the bubble-tight vacuum of the container handling 1 as vacuum chamber to keep function.
In the connected structure of the sidewall 1b shown in Fig. 4 and top board 1c, plasma and corrosive gas are interdicted in the position of O type ring 141.Therefore, plasma and corrosive gas can not arrive the joint interface that sidewall 1b and top board 1c directly abuts.Therefore, the anodized about top board 1c does not need completely, can suppress the time needed for anodized and the cost of top board 1c.
Other structures, the effect of present embodiment are identical with the first execution mode.In addition, the sidewall 1b shown in Fig. 4 and the connected structure of top board 1c also can be applicable to the connected structure of the diapire 1a of the plasma-etching apparatus 200 of the second execution mode and the sidewall 1b of square tube shape.
Above, describe embodiments of the present invention, but the invention is not restricted to above-mentioned execution mode, can all distortion be carried out.Such as, in the above-described embodiment, illustrate RIE formula capacitively coupled parallel flat plasma-etching apparatus lower electrode (base material 7) being applied to High frequency power, but also can be the type to upper electrode supply high frequency electric power, being not limited to capacitively coupled in addition, also can be inductively type.
In addition, the plasma-etching apparatus that it is handling object that container for plasma treatment of the present invention is not limited to FPD substrate, can take also such as semiconductor wafer as object, be not limited to plasma-etching apparatus in addition, such as, also can be suitable for other plasma processing apparatus such as plasma ashing apparatus, plasma CVD equipment.
Claims (7)
1. a container for plasma treatment, it forms storage handled object and carries out the process chamber of plasma treatment, it is characterized in that having:
Engage multiple container component parts and the container body formed;
Be disposed in the first seal member of the bonding part between described container component parts;
Be arranged on the inner face of described container body and protect the guard block of described container body,
Bonding part between described container component parts be provided with by by described guard block from described inner treatment chamber insert until arrive described first seal member position, interdict plasma or corrosive gas or described first seal member and described guard block are abutted at whole circumference and carry out the first sealing of sealing both it thus.
2. container for plasma treatment as claimed in claim 1, is characterized in that,
Be provided with in the outside of this first seal member and described guard block the second sealing directly getting involved the second seal member between described container component parts in the mode of surrounding described first seal member and described guard block.
3. container for plasma treatment as claimed in claim 2, is characterized in that,
By described first sealing blocking plasma and/or corrosive gas, maintained the air-tightness of described container body by described second sealing.
4. container for plasma treatment as claimed in claim 2 or claim 3, is characterized in that,
Described guard block is embedded in the recess of the parts be formed in two engaged parts; make the surface of the composition surface between described parts and described guard block be formed as the same face, described first seal member and described second seal member are embedded in the groove portion of another parts be arranged at respectively in two described engaged parts.
5. a container for plasma treatment, it forms storage handled object and carries out the process chamber of plasma treatment, it is characterized in that having:
Engage multiple container component parts and the container body formed;
Be disposed in the first seal member of the bonding part between described container component parts;
Bonding part between described container component parts, the second seal member arranged in the outside of this first seal member in the mode of surrounding described first seal member;
Be arranged on the inner face of described container body and protect the guard block of described container body,
Described first seal member and described second seal member are embedded in the groove portion of the parts be arranged at respectively in two engaged parts,
Bonding part between described container component parts is provided with: by by described guard block from described inner treatment chamber insert until arrive described first seal member position, interdict plasma or corrosive gas or described first seal member and described guard block are abutted and carry out the first sealing of sealing both it thus; And between described container component parts, directly get involved the second sealing of described second seal member.
6. container for plasma treatment as claimed in claim 5, is characterized in that,
Described guard block is embedded in the recess of another parts be formed in two described engaged parts, makes the surface of the composition surface between described parts and described guard block be formed as the same face.
7. a plasma processing apparatus, is characterized in that, has the container for plasma treatment according to any one of claim 1 ~ 6.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008-101698 | 2008-04-09 | ||
| JP2008101698A JP5271586B2 (en) | 2008-04-09 | 2008-04-09 | Plasma processing vessel and plasma processing apparatus |
| CNA2009101349057A CN101556913A (en) | 2008-04-09 | 2009-04-09 | Plasma processing container and plasma processing device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009101349057A Division CN101556913A (en) | 2008-04-09 | 2009-04-09 | Plasma processing container and plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104681388A true CN104681388A (en) | 2015-06-03 |
| CN104681388B CN104681388B (en) | 2018-03-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510062189.1A Active CN104681388B (en) | 2008-04-09 | 2009-04-09 | Container for plasma treatment and plasma processing apparatus |
| CNA2009101349057A Pending CN101556913A (en) | 2008-04-09 | 2009-04-09 | Plasma processing container and plasma processing device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009101349057A Pending CN101556913A (en) | 2008-04-09 | 2009-04-09 | Plasma processing container and plasma processing device |
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| Country | Link |
|---|---|
| JP (1) | JP5271586B2 (en) |
| CN (2) | CN104681388B (en) |
| TW (1) | TWI442502B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108091630A (en) * | 2016-11-23 | 2018-05-29 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and its manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5871453B2 (en) * | 2010-05-20 | 2016-03-01 | 東京エレクトロン株式会社 | Plasma processing apparatus, substrate holding mechanism, and substrate misalignment detection method |
| CN104766778A (en) * | 2015-03-31 | 2015-07-08 | 上海华力微电子有限公司 | Plasma etching equipment cavity sealing face protecting device |
| CN104701157A (en) * | 2015-03-31 | 2015-06-10 | 上海华力微电子有限公司 | Plasma etching apparatus with top disc for reducing edge etching rate |
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| US20030066607A1 (en) * | 2000-01-20 | 2003-04-10 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201003817A (en) | 2010-01-16 |
| CN101556913A (en) | 2009-10-14 |
| JP5271586B2 (en) | 2013-08-21 |
| TWI442502B (en) | 2014-06-21 |
| CN104681388B (en) | 2018-03-27 |
| JP2009253161A (en) | 2009-10-29 |
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