CN104681388B - Container for plasma treatment and plasma processing apparatus - Google Patents
Container for plasma treatment and plasma processing apparatus Download PDFInfo
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- CN104681388B CN104681388B CN201510062189.1A CN201510062189A CN104681388B CN 104681388 B CN104681388 B CN 104681388B CN 201510062189 A CN201510062189 A CN 201510062189A CN 104681388 B CN104681388 B CN 104681388B
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- seal member
- container
- plasma
- guard block
- sealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
Abstract
The present invention provides a kind of container for plasma treatment and the plasma processing apparatus with the container for plasma treatment.Operating time and the cost needed for the anodized of container for plasma treatment can strongly be mitigated.In container for plasma treatment, the junction of pad (102) insertion side wall (1b) and top plate (1c), its front end reaches inner side o-ring (111).Plasma and corrosive gas are interrupted in the position of inner side o-ring (111), so position that plasma and corrosive gas will not reach side wall (1b) and top plate (1c) directly abuts, it is not necessary to the anodized of top plate (1c).
Description
It is April 9, Application No. 200910134905.7, entitled " plasma in 2009 applying date that the application, which is,
The divisional application of the patent application of body process container and plasma processing apparatus ".
Technical field
Plasma is carried out to handled object the glass substrate such as flat-panel monitor (FPD) the present invention relates to one kind
The container for plasma treatment of handled object is stored during processing and the corona treatment with the container for plasma treatment fills
Put.
Background technology
With liquid crystal display (LCD) for representative FPD manufacturing processes in, under vacuo to handled objects such as glass substrates
Implement the various processing such as etching, film forming.In order to carry out the processing using plasma, and using has what can be sucked by vacuum
The plasma processing apparatus of container for plasma treatment.
In plasma processing apparatus, because the effect of plasma or corrosive gas can make metal plasma
The inner face of body process container is damaged.Therefore, the main body of the container for plasma treatment of such as aluminum is implemented at anodic oxidation
Manage (anodized) and improve corrosion resistance.Anodized is generally by will receive the container for plasma treatment of processing
Or its component parts is immersed in the electrolyte containing sulfuric acid or oxalic acid.
In addition, in order to prevent the damage of container for plasma treatment, also arranged in the internal face of container for plasma treatment
Guard block (pad：liner).Such as in patent document 1, along formation transporting in mouth in container for plasma treatment
Wall arranges the pad that can be dismounted.The oxide scale film that make use of anodized is formed on the surface of pad or is had resistance to etc.
The corrosive sputtered films of bismuth of gas ions, improve the durability of plasma or corrosive gas.But plasma or corrosivity
Gas can move into its dorsal part from the end of the pad of the inner face installed in container for plasma treatment, and (it holds with corona treatment
The gap of device) in, so even if in the case of being configured with pad, for container for plasma treatment, Lueyang can not be saved
Pole oxidation processes.
Patent document 1：International Publication WO2002/29877
In recent years, the maximization requirement to FPD substrate increases, and correspondingly, container for plasma treatment also has
The tendency of maximization.Also manufacture now using huge substrate of the one side more than 2m as the container for plasma treatment dealt with objects,
Anodized is difficult on such large-scale container for plasma treatment.In addition, in large-scale plasma
Implementing the activity duration of anodized and cost in process container also turns into larger burden.
The content of the invention
The present invention is to research and develop in view of the above problems, and its object is to strongly mitigate the anode of container for plasma treatment
Oxidation processes desired operating time and cost.
The container for plasma treatment of the present invention, it forms storage handled object and carries out the processing of corona treatment
Room, it is characterised in that have：
The container body that engagement multiple containers component parts forms；
First seal member of the bonding part being disposed between the container component parts；
Installed in the container body inner face and protect the guard block of the container body,
Bonding part between the container component parts be provided with by by the guard block from the inner treatment chamber
Insertion is until reaching the position of first seal member and making first seal member and the guard block abuts the
One sealing.
The container for plasma treatment of the present invention, it is first close at this preferably in a manner of surrounding first seal member
The outside of envelope part is provided with the second sealing that second seal member is directly involved between the container component parts.It is this
In the case of, plasma and/or corrosive gas are preferably interdicted by first sealing, sealed by described second
Portion maintains the air-tightness of the container body.Additionally, it is preferred that the material of first seal member and second seal member
Difference, first seal member have indefatigable material by plasma and/or corrosive gas and formed.
In addition, in the container for plasma treatment of the present invention, preferably described guard block, which is embedded in be formed at, to be engaged
Two parts in either component on recess in, form the composition surface between the part and the surface of the guard block
The same face.
In addition, in the container for plasma treatment of the present invention, the surface of preferably described guard block is by utilizing anodic oxidation
The oxidation overlay film or covered with the corrosive ceramic sputtered films of bismuth of anti-plasma that processing is formed.
The plasma processing apparatus of the present invention is characterised by thering is above-mentioned container for plasma treatment.
(invention effect)
According to the container for plasma treatment of the present invention, the structure with such first sealing is formed, it is two
Bonding part between individual container component parts, the first seal member is arranged, guard block is inserted into up to first seal member
Position, make the first seal member abut guard block.According to the sealing structure, plasma or corrosive gas are close by first
Interdict in envelope portion.Therefore, plasma and corrosive gas will not reach the composition surface that two container component parts directly abut.Cause
This, at least one party in the container component parts that is engaged, it is not necessary to anodized, anodized can be suppressed
Required time and cost.Turn into big burden, container for plasma treatment anodic oxygen in the past therefore, it is possible to play to reduce
Change the operating time needed for processing and the effect of cost.
Brief description of the drawings
Fig. 1 is the profile of the schematic configuration for the plasma-etching apparatus for representing the first embodiment of the present invention.
Fig. 2 is that enlarged representation Fig. 1 part A wants portion's profile.
Fig. 3 is the profile of the schematic configuration for the plasma-etching apparatus for representing second embodiment of the present invention.
Fig. 4 is that the plasma-etching apparatus of third embodiment of the present invention wants portion's profile.
Description of reference numerals
1 process container
1a bottom walls
1b side walls
1c top plates
2 bottom containers
3 insulating elements
5 supporting bodies
7 base materials
51 exhaust outlets
61 substrate transport openings
100 plasma-etching apparatus
101 pads
102 pads
111 inner side o-rings
112 outside o-rings
113 o-ring arranging grooves
114 recesses
Embodiment
Hereinafter, the embodiment that present invention will be described in detail with reference to the accompanying.Referring to Figures 1 and 2, on present embodiment etc.
Gas ions process container and the plasma-etching apparatus 100 with the container for plasma treatment illustrate.Fig. 1 is
Represent the profile of the schematic configuration of plasma-etching apparatus 100.Plasma-etching apparatus 100 is configured to for example to FPD
Glass substrate (hereinafter referred to as " substrate ") S carries out the device of plasma etch process.In addition, illustrate liquid as FPD
Crystal display (LCD), electroluminescent (Electro Luminescence：EL) display, plasma display (PDP)
Deng.
As shown in figure 1, plasma-etching apparatus 100 is configured to the electric capacity being etched to the substrate S for being formed as rectangle
The parallel flat plasma-etching apparatus of coupled mode.The plasma-etching apparatus 100 has by such as surface by anodic oxygen
Change the process container (container body) 1 for being configured to square tube shape that the aluminium of processing is formed.Appearance is used as the process container 1 of vacuum tank
Device component parts is made up of the bottom container 2 and top plate 1c of the side wall 1b with bottom wall 1a and four directions.With bottom wall 1a and side
Wall 1b bottom container 2 is integrally molded so as box such as by machining, implements anodized to surface.In side wall
1b inner face, for the influence of protective side wall 1b not subject plasma and corrosive gas, it is equipped as the guarantor for forming tabular
Protect the pad 101 of part.
Top plate 1c can be opened and closed relative to bottom container 2 by switching mechanism (not shown).Top plate 1c inner face (under
Face), in order to protect the influence of top plate 1c not subject plasma or corrosive gas, and it is equipped as the protection portion for forming tabular
The pad 102 of part.In the state of top plate 1c is closed, in top plate 1c and side wall 1b bonding part, close to process container 1
The inner side o-ring 111 as the first seal member is arranged on internal position, is arranged in a manner of surrounding the inner side o-ring 111
Outside o-ring 112 as the second seal member.That is, by making inner side 112 dual arranging of o-ring 111 and outside o-ring, from
And form the sealing structure of top plate 1c and side wall 1b bonding part.Sealing structure on the part is aftermentioned.In addition, in this reality
Apply in mode, because bottom container 2 (bottom wall 1a and side wall 1b) is integrally formed, so, by sealing top plate 1c's and side wall 1b
The inner side o-ring 111 and outside o-ring 112 of bonding part, kept in the state of top plate 1c is closed as vacuum tank
The air-tightness of process container 1.
Bottom in process container 1 configures the insulating element 3 of framed shape.Being provided with conduct on insulating element 3 can
Load the supporting body 5 of substrate S mounting table.
The supporting body 5 for also serving as lower electrode has base material 7.Base material 7 is such as the electric conductivity material as aluminium or stainless steel (SUS)
Material is formed.Base material 7 is configured on insulating element 3, and the seal members 13 such as o-ring, dimension are arranged on the bonding part of two parts
Hold air-tightness.Air-tightness is also maintained by seal member 14 between insulating element 3 and the bottom wall 1a of process container 1.The sidepiece of base material 7
Periphery is surrounded by insulating element 17.Thus, it is ensured that the insulating properties of the side of supporting body 5, prevents exception during corona treatment
Electric discharge.
Abreast and it is relatively provided with and plays a part of as upper electrode in the top of supporting body 5 and the supporting body 5
Spray head 31.Spray head 31 is supported on the top plate 1c on the top of process container 1.Spray head 31 forms hollow form, is set inside it
There is gas diffusion space 33.In addition, (opposite face of supporting body 5) forms the multiple of ejection processing gas below spray head 31
Gas squit hole 35.The spray head 31 is grounded, and a pair of parallel plate electrode is formed together with supporting body 5.
Gas introduction port 37 is provided near the center upper portion of spray head 31.It is connected to handle gas in the gas introduction port 37
Body supply pipe 39.Process gases supply pipe 39 is connected to supply via two valves 41,41 and mass flow controller 43 in this place
Gas supply source 45 for the processing gas of etching.As processing gas for example outside halogen class G＆O, additionally it is possible to use
Rare gas such as argon Ar etc..
Exhaust outlet 51 everywhere are formed on four angles of the bottom of the process container 1.The row of being connected on exhaust outlet 51
Tracheae 53, the blast pipe 53 are connected with exhaust apparatus 55.Exhaust apparatus 55 has the vavuum pump such as turbomolecular pump, thus, it is possible to
It is enough to be vacuum-drawn against defined reduced atmosphere in process container 1.
In addition, it is provided with the sidepiece 1b of a side of process container 1 as the opening portion being formed through with sidepiece 1b
Substrate transports and uses opening 61.Opening and closing (is omitted and illustrated) to the substrate transport with opening 61 by gate valve.Also, in the shape that the gate valve is opened
It is transported under state via substrate transport opening 61 and transports substrate S.In addition, it is provided with conduct on other sidepieces 1b of process container 1
It is formed through the window opening 63 of sidepiece 1b opening portion.Transparent quartz plate 65 is installed in each window opening 63.
Supply lines 71 is connected with the base material 7 of supporting body 5.The supply lines 71 is connected with high frequency via matching box (M.B.) 73
Power supply 75.Thus, such as 13.56MHz RF power is supplied from high frequency electric source 75 to the supporting body 5 as lower electrode.Separately
Outside, supply lines 71 is imported in process container via the opening 77 formed in bottom wall 1a.
In addition, it is provided with the baffle plate 81 of the cowling panel as the air-flow in control process container 1 in the side of supporting body 5.Gear
Four sides of plate 81 and the supporting body 5 of planar shape are correspondingly arranged four.Each baffle plate 81 is upright by the bottom wall 1a from process container 1
The 85 approximate horizontal supporting of insulation wall 83 and insulation wall of setting.On from the gas squit hole 35 of spray head 31 towards supporting body 5
The processing gas of substrate S supplies spread on substrate S surface to four directions, by the rectified action of baffle plate 81, towards located at place
The exhaust outlet 51 of the bottom of container 1 everywhere is managed to form air-flow and be vented simultaneously.
Then, the processing action of the plasma-etching apparatus 100 formed more than illustrating.First, it is (not shown) in opening
In the state of gate valve, as handled object substrate S from conveyer (not shown) via substrate transport with opening 61 to processing
It is transported into container 1, joins to supporting body 5.Afterwards, gate valve is closed, will be sucked by vacuum by exhaust apparatus 55 in process container 1 as rule
Fixed vacuum.
Then, relief valve 41, from gas supply source 45 via processing gas supply pipe 39, gas introduction port 37 to spray head
31 gas diffusion space 33 imports processing gas.At this moment, the flow control of processing gas is carried out by mass flow controller 43
System.The processing gas in gas diffusion space 33 is imported further via multiple ejiction openings 35 and to the base being placed on supporting body 5
Plate S uniformly sprays, and the pressure in process container 1 maintains setting.
RF power is applied to supporting body 5 from high frequency electric source 75 via matching box 73 under the state.Thus, as bottom
The supporting body 5 of electrode and as producing high-frequency electric field between the spray head 31 of upper electrode, processing gas dissociation and plasma
Change.Etching process is implemented to substrate S by the plasma.
After implementing etching process, stop applying RF power from high frequency electric source 75, stop gas and import, afterwards, will handle
Defined pressure is depressurized in container 1.Then, open gate valve, substrate S is joined to conveyer (not shown) from supporting body 5, from
The substrate transport opening 61 of process container 1 transports.Operation more than, terminates the etching process to substrate S.
Fig. 2 is the profile of enlarged representation side wall 1b and top plate 1c bonding part i.e. Fig. 1 part A.As it was previously stated, side
Wall 1b and top plate 1c bonding part pass through the o-ring 111 of inner side and the dual-seal of o-ring 112 in outside.By rubber or fluorine class
The inner side o-ring 111 and outside o-ring 112 that resin elastomeric material is formed are formed in side wall 1b upper end with embedded respectively
O-ring arrange with the state of groove 113 be arranged on the o-ring arrange with groove 113,.
The pad 101 of protective side wall 1b inner face can removably be arranged on side wall 1b.Protect the lining of top plate 1c inner face
Pad 102 can removably be arranged on top plate 1c.The recess 114 that pad 102 is formed below top plate 1c with being embedded with step difference
In, pad 102 surface and top plate 1c below form a face.Pad 101,102 is arranged on side wall 1b and top plate 1c side
Method is not particularly limited, such as can also be installed with fixed forms such as bolts.
Pad 102 installed in top plate 1c abuts with the upper end of the pad 101 installed in side wall 1b, pad 101 and pad
102 sections, which are seen, forms the configuration of T fonts., can be by implementing anodic oxygen to the surface of aluminium base as pad 101 and pad 102
Change handles (anodized) and obtained.In addition, as pad 101 and pad 102, preferably use to the substrate surface shape such as aluminium
Into the structure with the corrosive ceramic sputtered films of bismuth of anti-plasma.As with the corrosive ceramic sputtered films of bismuth of anti-plasma
Such as Y can be used2O3Sputtered films of bismuth, YF3Sputtered films of bismuth, AL2O3Sputtered films of bismuth, B4C sputtered films of bismuth etc..Among these, more preferably with outstanding
The corrosive Y of anti-plasma2O3Sputtered films of bismuth or YF3Sputtered films of bismuth.
In side wall 1b and top plate 1c bonding part, pad 102 inserts side wall 1b and top plate 1c from the inner side of process container 1
Between, its front end reaches inner side o-ring 111.That is, do not abutted in side wall 1b and top plate 1c bonding part, inner side o-ring 111
Top plate 1c, and pad 102 is abutted, form the first sealing.Plasma or corruption are interdicted at the position by first sealing
Corrosion gas.So, inner side o-ring 111, which mainly has, prevents plasma or corrosive gas from invading side wall 1b and top plate 1c
Bonding part gap in function, that is, have blocking plasma or corrosive gas function.On the other hand, outside O
Type ring 112 is directly between side wall 1b and top plate 1c, it is ensured that the sealing of the bonding part of two parts, mainly has and keeps making
Vacuum for the air-tightness of the process container 1 of vacuum chamber keeps function.
Inner side o-ring 111 and outside o-ring 112 also can be phase same material.But as with interdict plasma and
The function of gas has excellent for the material prioritizing selection plasma and corrosive gas of o-ring 111 on the inside of main purpose
Patience material such as silicon rubber, perfluoroelastomers (perfluoroelastomers).On the other hand, protected as with vacuum
The material for the outside o-ring 112 that function is main purpose is held, from the viewpoint of low from gas transmissivity and cheap, such as preferably
Fluorine class rubber.So, according to the inner side o-ring 111 of dual arranging and the difference of the function of outside o-ring 112, and selection is passed through
Most suitable material, the effect of inner side o-ring 111 and outside o-ring 112 can be played to the limit, and can grown
Phase uses the o-ring easily deteriorated.
In the connected structure shown in Fig. 1 and Fig. 2, the position quilt of plasma and corrosive gas in inner side o-ring 111
Blocking.Therefore, plasma and corrosive gas will not reach joint interface that side wall 1b and top plate 1c directly abut, for example not
The equipping position of the outside o-ring 112 of vacuum holding can be reached.Therefore, top plate 1c is not exposed to plasma or corrosion
Property gas, completely without anodized.Therefore, in the plasma-etching apparatus 100 of present embodiment, can press down
Time and cost needed for top plate 1c processed anodized.
(second embodiment)
Then, reference picture 3 illustrates second embodiment of the present invention.Fig. 3 is to represent second embodiment of the present invention
The profile of the schematic configuration of plasma-etching apparatus 200.In the plasma-etching apparatus 100 of first embodiment,
It is integrally formed using bottom wall 1a and side wall 1b and the bottom container 2 of anodized is implemented to surface, but in this implementation
In the plasma-etching apparatus 200 of mode, bottom wall 1a is formed by plate-shaped member respectively, side wall 1b is formed by square tube shape part.
Hereinafter, so that with illustrating centered on the difference of first embodiment (Fig. 1), identical reference is used to identical structure,
The description thereof will be omitted.In addition, in figure 3, omit the diagram of baffle plate 81, insulation wall 83 and insulation wall 85.
In present embodiment, as shown in figure 3, recess 121 is formed on bottom wall 1a, it is embedded herein to pad 122 and arrange,
Bottom wall 1a and side wall 1b bonding part arrange the inner side o-ring 131 as the first seal member, further with encirclement inner side O
The mode of type ring 131 arranges the outside o-ring 132 as the second seal member.That is, by by inner side o-ring 131 and outside O
132 dual arranging of type ring, so as to form the sealing structure of bottom wall 1a and side wall 1b bonding part.
Pad 122 inserts bottom wall 1a and side wall 1b junction from the inner side of process container 1, and its front end reaches inner side
O-ring 131.That is, in bottom wall 1a and side wall 1b bonding part, pad 122 directly abuts inner side o-ring 131, forms first
Sealing, interdict plasma and corrosive gas at the position.So, inner side o-ring 131, which mainly has, prevents plasma
With the function in the gap of corrosive gas intrusion bottom wall 1a and side wall 1b bonding part, i.e. with blocking plasma and corruption
The function of corrosion gas.On the other hand, outside o-ring 132 forms the second sealing directly between bottom wall 1a and side wall 1b
Portion, it is ensured that the sealing of the bonding part of two parts, mainly with the airtight inside for keeping the process container 1 as vacuum chamber
The vacuum in space keeps function.
The side wall 1b and top plate 1c of present embodiment connected structure are identical with first embodiment.
In the bottom wall 1a and side wall 1b connected structure shown in Fig. 3, plasma and corrosive gas are in inner side o-ring
131 position is interrupted.Therefore, plasma and corrosive gas will not reach the engagement that bottom wall 1a and side wall 1b are directly abutted
Interface, the equipping position of for example few outside o-ring 132 for reaching vacuum holding.Accordingly, with respect to bottom wall 1a anodic oxidation
Processing is completely without can suppress the time needed for bottom wall 1a anodized and cost.In addition, present embodiment
In, with first embodiment also, it is not required top plate 1c anodized.In addition, in the present embodiment, pass through
Square tube shape part forms side wall 1b, so the inner face that can also obtain offside wall 1b also easily carries out the secondary of anodized
Effect.
Other structures, effect and effect in present embodiment are identical with first embodiment.
(the 3rd embodiment)
Then, reference picture 4 illustrates third embodiment of the present invention.Present embodiment is the above-mentioned first and second implementation
The variation of mode, in addition to changing the equipping position of the second seal member, it can intactly be applicable first and second
The plasma-etching apparatus 100,200 of embodiment.Hereinafter, with first and second embodiment (Fig. 1 and Fig. 2) no
With being illustrated centered on point, identical reference is applicable to identical structure, omitted the description.
Fig. 4 is the profile of enlarged representation side wall 1b and top plate 1c bonding part.Top plate 1c inner face (below) match somebody with somebody
Provided with the pad 102 as the guard block for forming tabular.In side wall 1b and top plate 1c bonding part, 102 are padded from processing
Between the inner side insertion side wall 1b and top plate 1c of container 1.In top plate 1c and side wall 1b engagement in the state of top plate 1c is closed
Partly, the o-ring 141 as the first seal member is arranged close to the position of the inside of the process container 1 of side wall 1b sides.O-ring
141 abut below pad 102 and arrange.O-ring 141, which mainly has, prevents plasma or corrosive gas from invading side wall 1b
With in the gap of top plate 1c bonding part function (blocking plasma or corrosive gas function), and, it is ensured that lining
Sealing between pad 102 and side wall 1b, the vacuum with the air-tightness for keeping the process container 1 as vacuum chamber keep work(
Energy.
In addition, it is equipped with o-ring 142 between 102 and top plate 1c is padded.O-ring 142 abut pad 102 above and
Arrange.O-ring 142 ensures the sealing of the rear side (i.e. between 102 and top plate 1c of pad) of pad 102, has and keeps conduct
The vacuum of the air-tightness of the process container 1 of vacuum chamber keeps function.
In the side wall 1b and top plate 1c connected structure shown in Fig. 4, plasma and corrosive gas are in o-ring 141
Position be interrupted.Therefore, plasma and corrosive gas will not reach engagement circle that side wall 1b and top plate 1c are directly abutted
Face.Accordingly, with respect to top plate 1c anodized completely without needed for the anodized that can suppress top plate 1c
Time and cost.
The other structures of present embodiment, effect and effect are identical with first embodiment.In addition, the side wall shown in Fig. 4
1b and top plate 1c connected structure can also be applied to bottom wall 1a and the side of the plasma-etching apparatus 200 of second embodiment
The side wall 1b of tubular connected structure.
Embodiments of the present invention are this concludes the description of, but the invention is not restricted to above-mentioned embodiment, can be carried out a variety of
Deformation.For example, in the above-described embodiment, the RIE formula electric capacity for applying RF power to lower electrode (base material 7) is illustrated
Coupled mode parallel flat plasma-etching apparatus, but can also be the type to upper electrode supply high frequency electric power, in addition
It is not limited to capacitively coupled or inductively type.
In addition, the container for plasma treatment of the present invention is not limited to be lost using FPD with plasma of the substrate to deal with objects
Engraving device, such as using semiconductor wafer as object plasma-etching apparatus can also be not limited in addition, such as can also be adapted to
In other plasma processing apparatus such as plasma ashing apparatus, plasma CVD equipment.
Claims (5)
1. a kind of container for plasma treatment, it forms storage handled object and carries out the process chamber of corona treatment, and it is special
Sign is have：
The container body for engaging multiple containers component parts and being formed；
First seal member of the bonding part being disposed between the container component parts；
The guard block that can be dismounted of the container body is protected installed in the inner face of the container body,
Bonding part between the container component parts is provided with by the way that the guard block is inserted from the inner treatment chamber
Until the position of first seal member is reached, plasma or corrosive gas or both is thus interdicted and makes institute
The first sealing that the first seal member and the guard block are abutted and sealed in whole circumference is stated,
In first seal member and described in a manner of surrounding the peripheral part of first seal member and the guard block
The outside of the peripheral part of guard block is provided with the second sealing that the second seal member is directly involved between the container component parts
Portion, the peripheral part of the guard block between first seal member and second seal member,
Plasma and/or corrosive gas are interdicted by first sealing, maintained by second sealing
The air-tightness of the container body.
2. container for plasma treatment as claimed in claim 1, it is characterised in that
The guard block is embedded in the recess for a part being formed in two engaged parts, is made between the part
Composition surface and the surface of the guard block be formed as the same face, first seal member and second seal member are embedding
Enter the groove portion of another part in two engaged parts are respectively arranged at.
3. a kind of container for plasma treatment, it forms storage handled object and carries out the process chamber of corona treatment, and it is special
Sign is have：
The container body for engaging multiple containers component parts and being formed；
First seal member of the bonding part being disposed between the container component parts；
The guard block that can be dismounted of the container body is protected installed in the inner face of the container body；
Bonding part between the container component parts, to surround the periphery of first seal member and the guard block
The second seal member that the mode in portion arranges in the outside of first seal member and the peripheral part of the guard block, it is described
First seal member and second seal member are embedded in a part being respectively arranged in two engaged parts
Groove portion,
Bonding part between the container component parts is provided with：By the way that the guard block is inserted from the inner treatment chamber
Until the position of first seal member is reached, plasma or corrosive gas or both is thus interdicted and makes institute
State the first sealing that the first seal member and the guard block are abutted and sealed；And between the container component parts
The second sealing of second seal member is directly involved, the peripheral part of the guard block is located at first seal member
Between second seal member,
Plasma and/or corrosive gas are interdicted by first sealing, maintained by second sealing
The air-tightness of the container body.
4. container for plasma treatment as claimed in claim 3, it is characterised in that
The guard block is embedded in the recess for another part being formed in two engaged parts, is made described
The surface on composition surface and the guard block between part is formed as the same face.
5. a kind of plasma processing apparatus, it is characterised in that there is plasma according to any one of claims 1 to 4
Process container.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008-101698 | 2008-04-09 | ||
| JP2008101698A JP5271586B2 (en) | 2008-04-09 | 2008-04-09 | Plasma processing vessel and plasma processing apparatus |
| CNA2009101349057A CN101556913A (en) | 2008-04-09 | 2009-04-09 | Plasma processing container and plasma processing device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009101349057A Division CN101556913A (en) | 2008-04-09 | 2009-04-09 | Plasma processing container and plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104681388A CN104681388A (en) | 2015-06-03 |
| CN104681388B true CN104681388B (en) | 2018-03-27 |
Family
ID=41174967
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510062189.1A Active CN104681388B (en) | 2008-04-09 | 2009-04-09 | Container for plasma treatment and plasma processing apparatus |
| CNA2009101349057A Pending CN101556913A (en) | 2008-04-09 | 2009-04-09 | Plasma processing container and plasma processing device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009101349057A Pending CN101556913A (en) | 2008-04-09 | 2009-04-09 | Plasma processing container and plasma processing device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5271586B2 (en) |
| CN (2) | CN104681388B (en) |
| TW (1) | TWI442502B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5871453B2 (en) * | 2010-05-20 | 2016-03-01 | 東京エレクトロン株式会社 | Plasma processing apparatus, substrate holding mechanism, and substrate misalignment detection method |
| CN104701157A (en) * | 2015-03-31 | 2015-06-10 | 上海华力微电子有限公司 | Plasma etching apparatus with top disc for reducing edge etching rate |
| CN104766778A (en) * | 2015-03-31 | 2015-07-08 | 上海华力微电子有限公司 | Plasma etching equipment cavity sealing face protecting device |
| CN108091630B (en) * | 2016-11-23 | 2020-01-03 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor device and manufacturing method thereof |
| JP7316863B2 (en) | 2019-07-19 | 2023-07-28 | 東京エレクトロン株式会社 | Joining structure and joining method of first conductive member and second conductive member, and substrate processing apparatus |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0338358U (en) * | 1989-08-19 | 1991-04-12 | ||
| JP2593690Y2 (en) * | 1993-10-15 | 1999-04-12 | 日新電機株式会社 | LEP quartz chamber |
| US5722668A (en) * | 1994-04-29 | 1998-03-03 | Applied Materials, Inc. | Protective collar for vacuum seal in a plasma etch reactor |
| KR100268432B1 (en) * | 1998-09-05 | 2000-11-01 | 윤종용 | Device for Plasma Etching |
| JP4004154B2 (en) * | 1998-10-20 | 2007-11-07 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US6477980B1 (en) * | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
| JP2002313780A (en) * | 2001-04-11 | 2002-10-25 | Seiko Epson Corp | Quartz chamber for semiconductor manufacturing device and manufacturing method therefor |
| JP2003068713A (en) * | 2001-08-24 | 2003-03-07 | Matsushita Electric Ind Co Ltd | Plasma treatment apparatus |
| JP4628900B2 (en) * | 2005-08-24 | 2011-02-09 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| JP2007250569A (en) * | 2006-03-13 | 2007-09-27 | Tokyo Electron Ltd | Plasma treatment apparatus and member to be exposed in plasma |
-
2008
- 2008-04-09 JP JP2008101698A patent/JP5271586B2/en active Active
-
2009
- 2009-04-08 TW TW098111687A patent/TWI442502B/en active
- 2009-04-09 CN CN201510062189.1A patent/CN104681388B/en active Active
- 2009-04-09 CN CNA2009101349057A patent/CN101556913A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW201003817A (en) | 2010-01-16 |
| JP2009253161A (en) | 2009-10-29 |
| TWI442502B (en) | 2014-06-21 |
| CN101556913A (en) | 2009-10-14 |
| JP5271586B2 (en) | 2013-08-21 |
| CN104681388A (en) | 2015-06-03 |
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