CN104651806B - 多托盘压载抽蒸气系统 - Google Patents

多托盘压载抽蒸气系统 Download PDF

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Publication number
CN104651806B
CN104651806B CN201410680419.6A CN201410680419A CN104651806B CN 104651806 B CN104651806 B CN 104651806B CN 201410680419 A CN201410680419 A CN 201410680419A CN 104651806 B CN104651806 B CN 104651806B
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China
Prior art keywords
pallet
carrier gas
conduit
precursor
liquid precursor
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CN201410680419.6A
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English (en)
Chinese (zh)
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CN104651806A (zh
Inventor
拉梅什·钱德拉赛卡兰
戴维斯·威尔曼
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Lam Research Corp
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Lam Research Corp
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Priority to CN201811122857.5A priority Critical patent/CN109536923B/zh
Publication of CN104651806A publication Critical patent/CN104651806A/zh
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561Gas plumbing upstream of the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN201410680419.6A 2013-11-25 2014-11-24 多托盘压载抽蒸气系统 Active CN104651806B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811122857.5A CN109536923B (zh) 2013-11-25 2014-11-24 多托盘压载抽蒸气系统

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/089,009 2013-11-25
US14/089,009 US9334566B2 (en) 2013-11-25 2013-11-25 Multi-tray ballast vapor draw systems

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201811122857.5A Division CN109536923B (zh) 2013-11-25 2014-11-24 多托盘压载抽蒸气系统

Publications (2)

Publication Number Publication Date
CN104651806A CN104651806A (zh) 2015-05-27
CN104651806B true CN104651806B (zh) 2018-11-02

Family

ID=53181978

Family Applications (2)

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CN201410680419.6A Active CN104651806B (zh) 2013-11-25 2014-11-24 多托盘压载抽蒸气系统
CN201811122857.5A Active CN109536923B (zh) 2013-11-25 2014-11-24 多托盘压载抽蒸气系统

Family Applications After (1)

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CN201811122857.5A Active CN109536923B (zh) 2013-11-25 2014-11-24 多托盘压载抽蒸气系统

Country Status (5)

Country Link
US (1) US9334566B2 (https=)
JP (1) JP6945269B2 (https=)
KR (1) KR102369254B1 (https=)
CN (2) CN104651806B (https=)
TW (2) TWI700120B (https=)

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US10876205B2 (en) 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US11926894B2 (en) * 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
CN118360588A (zh) 2018-07-05 2024-07-19 朗姆研究公司 衬底处理系统中的衬底支撑件的动态温度控制
US11183400B2 (en) 2018-08-08 2021-11-23 Lam Research Corporation Progressive heating of components of substrate processing systems using TCR element-based heaters
US11634812B2 (en) 2018-08-16 2023-04-25 Asm Ip Holding B.V. Solid source sublimator
JP7240993B2 (ja) * 2019-08-27 2023-03-16 東京エレクトロン株式会社 原料ガス供給システム及び原料ガス供給方法
US11624113B2 (en) 2019-09-13 2023-04-11 Asm Ip Holding B.V. Heating zone separation for reactant evaporation system
WO2021054216A1 (ja) 2019-09-18 2021-03-25 東京エレクトロン株式会社 原料ガス供給システム及び原料ガス供給方法
KR102919003B1 (ko) * 2020-03-17 2026-01-28 도쿄엘렉트론가부시키가이샤 원료 공급 시스템
JP7519829B2 (ja) * 2020-03-17 2024-07-22 東京エレクトロン株式会社 原料供給システム及び原料供給方法
CN115867999A (zh) 2020-06-06 2023-03-28 朗姆研究公司 用于半导体处理的可移除喷头面板
JP7788408B2 (ja) * 2020-07-29 2025-12-18 ラム リサーチ コーポレーション バブラを用いた濃度制御
US20230374657A1 (en) * 2020-10-09 2023-11-23 Lam Research Corporation Vapor delivery device
CN114277358B (zh) * 2021-11-12 2023-10-27 北京北方华创微电子装备有限公司 一种液态源瓶及半导体工艺设备
US20240133033A1 (en) * 2021-12-08 2024-04-25 Asm Ip Holding B.V. Reactant delivery system and reactor system including same
US20260098337A1 (en) * 2024-10-07 2026-04-09 L'Air Liquide, Société Anonyme pour I'Etude et I'Exploitation des Procédés Georges Claude Metal chloride precursors and deposition of metal-containing films

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CN1549738A (zh) * 2001-08-28 2004-11-24 �������Ȼ��Ʒ��ҵ���޹�˾ 用于分馏蒸发的多室设备和溶液的分离
CN101050524A (zh) * 2006-04-05 2007-10-10 杰努斯公司 用于向反应器输送均匀气体的方法和设备

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US366168A (en) * 1887-07-05 Gas-generating machine
US1583255A (en) * 1924-05-21 1926-05-04 Moore Willis Luther Humidifying radiator
CN1549738A (zh) * 2001-08-28 2004-11-24 �������Ȼ��Ʒ��ҵ���޹�˾ 用于分馏蒸发的多室设备和溶液的分离
CN101050524A (zh) * 2006-04-05 2007-10-10 杰努斯公司 用于向反应器输送均匀气体的方法和设备

Also Published As

Publication number Publication date
TWI654025B (zh) 2019-03-21
TWI700120B (zh) 2020-08-01
TW201919755A (zh) 2019-06-01
JP6945269B2 (ja) 2021-10-06
KR102369254B1 (ko) 2022-02-28
TW201532665A (zh) 2015-09-01
CN109536923B (zh) 2021-08-06
CN104651806A (zh) 2015-05-27
US9334566B2 (en) 2016-05-10
US20150145154A1 (en) 2015-05-28
KR20150060566A (ko) 2015-06-03
CN109536923A (zh) 2019-03-29
JP2015110837A (ja) 2015-06-18

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