CN104638094A - Scattering-type LED luminous chip structure - Google Patents
Scattering-type LED luminous chip structure Download PDFInfo
- Publication number
- CN104638094A CN104638094A CN201310555048.4A CN201310555048A CN104638094A CN 104638094 A CN104638094 A CN 104638094A CN 201310555048 A CN201310555048 A CN 201310555048A CN 104638094 A CN104638094 A CN 104638094A
- Authority
- CN
- China
- Prior art keywords
- led luminescence
- luminescence chip
- scattering
- glass supporter
- type led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 28
- 241001025261 Neoraja caerulea Species 0.000 claims abstract description 11
- 238000004020 luminiscence type Methods 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000741 silica gel Substances 0.000 claims description 12
- 229910002027 silica gel Inorganic materials 0.000 claims description 12
- 241000446313 Lamella Species 0.000 claims description 6
- 238000001746 injection moulding Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229920001296 polysiloxane Polymers 0.000 abstract 3
- 238000009499 grossing Methods 0.000 abstract 1
- 238000000149 argon plasma sintering Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 201000009310 astigmatism Diseases 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a scattering-type LED luminous chip structure comprising a circular glass support. A shading portion is integrated with the periphery of the glass support. At least two parallel LED luminous chips are fixed on the upper surface of the glass support. The glass support is provided with a cover internally provided with a big-end-up tapered through hole. A silicone lens layer in the tapered through hole is formed by injecting and arranged outside blue-ray LED luminous chips. The silicone lens layer comprises a body. A semi-spherical protrusion extending upwards is formed in the middle of the upper surface of the body and surrounded by a scattering protrusion with a triangular section. The scattering protrusion is provided with a zigzag surface inclining to the semi-spherical protrusion. The scattering-type LED luminous chip structure has the advantages that the semi-spherical structure is integrated with the zigzag structure to improve light ray scattering effect, accordingly smoothing the light rays; structure is simple, production is easy, and silicone binding capability is good.
Description
Technical field
The present invention relates to a kind of scatter-type LED luminescence chip structure.
Background technology
In existing LED luminescence chip, usually adopt mould to encapsulate, the colloid of encapsulation is generally semicircle, although semicircular encapsulating structure is relatively simple, light transmission is single, and the light scattering effect of light-emitting component is single, is difficult to obtain better illumination effect.
For this reason, designer of the present invention is because above-mentioned defect, and by concentrating on studies and designing, comprehensive experience and the achievement being engaged in related industry for a long time for many years, research and design goes out a kind of scatter-type LED luminescence chip structure, to overcome above-mentioned defect.
Summary of the invention
The technical problem to be solved in the present invention is: semicircular encapsulating structure is relatively simple, but light transmission is single, and the light scattering effect of light-emitting component is single, is difficult to obtain better illumination effect.
For solving the problem, the invention discloses a kind of scatter-type LED luminescence chip structure, comprising circular glass supporter, it is characterized in that:
Described glass supporter periphery has the light shielding part being incorporated into one, the upper surface of described glass supporter is installed with one at least two LED luminescence chip arranged side by side, described at least two LED luminescence chips arranged side by side comprise at least one blue-ray LED luminescence chip and at least one red-light LED luminescence chip, described glass supporter has been embedded at least two bonding jumpers, described blue-ray LED luminescence chip is wired to a wherein bonding jumper by one, and described red-light LED luminescence chip is wired to another bonding jumper by one;
Described glass supporter also has a cover body, described cover body is around described blue-ray LED luminescence chip, have a up big and down small conical through-hole in it, the one-tenth being provided with injection moulding in described conical through-hole is positioned at the silica gel glasses lamella outside described blue-ray LED luminescence chip;
Described silica gel glasses lamella comprises body, the upper surface centre position of described body is upwards extended with a hemispherical projections, it is that leg-of-mutton scattering is protruding that described body is formed with cross section around hemispherical projections, and described scattering projection has the hackly surface tilted towards described hemispherical projections.
Wherein: the inner surface of described cover body is coated with a reflector layer, the surface of described reflector layer is formed with multiple projection.
Wherein: the bottom of described glass supporter is installed with reflector to improve light reflection effect.
Known by said structure, scatter-type LED luminescence chip structure of the present invention has following technique effect:
1, have employed semicircle and tooth-shape structure in conjunction with astigmatism, improve light scattering effect, make light softer;
2, structure is simple, and production process is simple, silica gel excellent bonding performance.
Detailed content of the present invention obtains by explanation described later and institute's accompanying drawing.
Accompanying drawing explanation
Fig. 1 shows the schematic diagram of scatter-type LED luminescence chip structure of the present invention.
Embodiment
See Fig. 1, show scatter-type LED luminescence chip structure of the present invention.
Described scatter-type LED luminescence chip structure comprises circular glass supporter 11, described glass supporter 11 periphery has the light shielding part 111 being incorporated into one, described light shielding part 111 is made for rubber, the upper surface of described glass supporter 11 is installed with one at least two LED luminescence chip 15 arranged side by side, described at least two LED luminescence chips 15 arranged side by side comprise at least one blue-ray LED luminescence chip and at least one red-light LED luminescence chip, described glass supporter 11 has been embedded at least two bonding jumpers 14, described blue-ray LED luminescence chip is wired to a wherein bonding jumper by one, described red-light LED luminescence chip is wired to another bonding jumper by one.
Wherein, the bottom of described glass supporter 11 is installed with reflector 16, to improve light reflection effect.
Described glass supporter 11 also has a cover body 12, described cover body is around described LED luminescence chip 15, have a up big and down small conical through-hole in it, the one-tenth being provided with injection moulding in described conical through-hole is positioned at the silica gel glasses lamella 13 outside described LED luminescence chip.
Described silica gel glasses lamella 13 comprises body, the upper surface centre position of described body is upwards extended with a hemispherical projections 17, it is leg-of-mutton scattering projection 18 that described body is formed with cross section around hemispherical projections 17, and described scattering projection 18 has the hackly surface tilted towards described hemispherical projections 17.
For improve silica gel in conjunction with effect, the inner surface of described cover body 12 is coated with a reflector layer 121, and the surface of described reflector layer 121 is formed with multiple protruding 122, and thus, after injection silica gel is shaping, protruding 122 embed in layer of silica gel, avoid coming off of silica gel.
Thus, the glomerate light scattering effect of described hemispherical projections 17 shape, the light of periphery is then carried out scattering injection by scattering protruding 18, due to the dispersion effect of profile of tooth, light can be penetrated to multiple directions, forms the injection effect of a light scattering thus.
Known by said structure, scatter-type LED luminescence chip structure tool of the present invention has the following advantages:
1, have employed semicircle and tooth-shape structure in conjunction with astigmatism, improve light scattering effect, make light softer;
2, structure is simple, and production process is simple, silica gel excellent bonding performance.
It is evident that, above description and record be only citing instead of in order to limit disclosure of the present invention, application or use.Although described in an embodiment and be described in the drawings embodiment, but the present invention do not limit by accompanying drawing example and describe in an embodiment as the optimal mode thought at present to implement the specific examples of instruction of the present invention, scope of the present invention will comprise any embodiment of specification and the appended claim fallen into above.
Claims (3)
1. a scatter-type LED luminescence chip structure, comprises circular glass supporter, it is characterized in that:
Described glass supporter periphery has the light shielding part being incorporated into one, the upper surface of described glass supporter is installed with one at least two LED luminescence chip arranged side by side, described at least two LED luminescence chips arranged side by side comprise at least one blue-ray LED luminescence chip and at least one red-light LED luminescence chip, described glass supporter has been embedded at least two bonding jumpers, described blue-ray LED luminescence chip is wired to a wherein bonding jumper by one, and described red-light LED luminescence chip is wired to another bonding jumper by one;
Described glass supporter also has a cover body, described cover body is around described blue-ray LED luminescence chip, have a up big and down small conical through-hole in it, the one-tenth being provided with injection moulding in described conical through-hole is positioned at the silica gel glasses lamella outside described blue-ray LED luminescence chip;
Described silica gel glasses lamella comprises body, the upper surface centre position of described body is upwards extended with a hemispherical projections, it is that leg-of-mutton scattering is protruding that described body is formed with cross section around hemispherical projections, and described scattering projection has the hackly surface tilted towards described hemispherical projections.
2. scatter-type LED luminescence chip structure as claimed in claim 1, it is characterized in that: the inner surface of described cover body is coated with a reflector layer, the surface of described reflector layer is formed with multiple projection.
3. scatter-type LED luminescence chip structure as claimed in claim 1, is characterized in that: the bottom of described glass supporter is installed with reflector to improve light reflection effect.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310555048.4A CN104638094A (en) | 2013-11-11 | 2013-11-11 | Scattering-type LED luminous chip structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310555048.4A CN104638094A (en) | 2013-11-11 | 2013-11-11 | Scattering-type LED luminous chip structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104638094A true CN104638094A (en) | 2015-05-20 |
Family
ID=53216599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310555048.4A Pending CN104638094A (en) | 2013-11-11 | 2013-11-11 | Scattering-type LED luminous chip structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104638094A (en) |
-
2013
- 2013-11-11 CN CN201310555048.4A patent/CN104638094A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150520 |