CN104638087A - Improved LED silica gel chip encapsulating structure - Google Patents
Improved LED silica gel chip encapsulating structure Download PDFInfo
- Publication number
- CN104638087A CN104638087A CN201310554708.7A CN201310554708A CN104638087A CN 104638087 A CN104638087 A CN 104638087A CN 201310554708 A CN201310554708 A CN 201310554708A CN 104638087 A CN104638087 A CN 104638087A
- Authority
- CN
- China
- Prior art keywords
- silica gel
- mould bases
- led
- modified form
- silicon core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 239000000741 silica gel Substances 0.000 title claims abstract description 40
- 229910002027 silica gel Inorganic materials 0.000 title claims abstract description 40
- 239000011521 glass Substances 0.000 claims abstract description 20
- 238000002347 injection Methods 0.000 claims abstract description 14
- 239000007924 injection Substances 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 238000004020 luminiscence type Methods 0.000 claims description 9
- 241001025261 Neoraja caerulea Species 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000001746 injection moulding Methods 0.000 claims description 4
- 238000000465 moulding Methods 0.000 claims description 3
- 238000009415 formwork Methods 0.000 abstract 6
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 238000009423 ventilation Methods 0.000 abstract 1
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 241000446313 Lamella Species 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
- H01L2224/48476—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area
- H01L2224/48477—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding)
- H01L2224/48478—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball
- H01L2224/48479—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being a pre-ball (i.e. a ball formed by capillary bonding) the connecting portion being a wedge bond, i.e. wedge on pre-ball on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an improved LED silica gel chip encapsulating structure. An LED silica gel chip is encapsulated and comprises a round glass support, at least two parallel blue-light LED light emitting chips are fixedly arranged on the upper surface of the glass support, a cover is located on the glass support and surrounds the blue-light LED light emitting chip, and a conical through hole with big end up is formed in the cover; the encapsulating structure comprises a formwork which is connected on the surface of the cover in an abutted manner, a semispherical inner groove is formed in the upper surface of the formwork, a protruding portion with a triangular section is arranged on the periphery of the inner groove, a conical injection hole is formed in the middle of the formwork, and a ventilation hole penetrating the upper surface and the lower surface of the formwork is formed in a side portion of the protruding portion of the formwork. Consequently, combined encapsulating of semicircular silica gel and triangular silica gel is realized through the formwork, and light irradiating effect of the chip is improved.
Description
Technical field
The present invention relates to a kind of modified form LED silicon core chip package.
Background technology
In existing LED luminescence chip, usually adopt mould to encapsulate, the colloid of encapsulation is generally semicircle, although semicircular encapsulating structure is relatively simple, light transmission is single, and the light scattering effect of light-emitting component is single, is difficult to obtain better illumination effect.
For this reason, designer of the present invention is because above-mentioned defect, and by concentrating on studies and designing, comprehensive experience and the achievement being engaged in related industry for a long time for many years, research and design goes out a kind of modified form LED silicon core chip package, to overcome above-mentioned defect.
Summary of the invention
The technical problem to be solved in the present invention is: semicircular encapsulating structure is relatively simple, but light transmission is single, and the light scattering effect of light-emitting component is single, is difficult to obtain better illumination effect.
For solving the problem, the invention discloses a kind of modified form LED silicon core chip package, one LED silica gel chip is encapsulated, described LED silica gel chip comprises circular glass supporter, the upper surface of described glass supporter is installed with one at least two blue-ray LED luminescence chip arranged side by side, and described glass supporter also occupies a cover body, and described cover body is around described blue-ray LED luminescence chip, there is in it up big and down small conical through-hole, it is characterized in that:
Described modified form LED silicon core chip package comprises a mould bases, and described mould bases is connected to the surface of described cover body, forms the molding space that supplies silica gel injection moulding between described mould bases and glass supporter;
The upper surface of described mould bases has a hemispheric inner groovy, it is leg-of-mutton protuberance that the periphery of described inner groovy has cross section, the middle part of described mould bases has a taper hand-hole, and the sidepiece of the protuberance of described mould bases is provided with the air vent hole of through mould bases upper and lower surface.
Wherein: also comprise one to carry out silica gel injection silica gel injection device from described taper hand-hole.
Wherein: described silica gel injection device for being automatically injected machine, described in be automatically injected in machine and there is heater automatically to inject after heating silica gel, described in be automatically injected machine be electric piston formula implanter.
Wherein: described silica gel injection device is soft silica gel container, has heater bottom it, thus can heating silica gel after manually inject.
Known by said structure, modified form LED silicon core chip package of the present invention has following technique effect:
1, achieved the combination encapsulation of semicircle and triangle silica gel by specific mould bases, make chip improve light radiation response;
2, structure is simple, and production process is simple, colloid excellent bonding performance.
Detailed content of the present invention obtains by explanation described later and institute's accompanying drawing.
Accompanying drawing explanation
Fig. 1 shows the structural representation of the LED silica gel chip that the present invention carries out encapsulating.
Fig. 2 shows the schematic diagram of modified form LED silicon core chip package of the present invention.
Embodiment
See Fig. 2, show modified form LED silicon core chip package of the present invention.
Described modified form LED silicon core chip package encapsulates a LED silica gel chip, see Fig. 1, described LED silica gel chip comprises circular glass supporter 11, described glass supporter 11 periphery has the light shielding part (in figure many vertical line parts) being incorporated into one, the upper surface of described glass supporter 11 is installed with one at least two blue-ray LED luminescence chip 15 arranged side by side, described glass supporter 11 has been embedded at least one bonding jumper 14, and described blue-ray LED luminescence chip 15 is wired to described bonding jumper by one.
Wherein, the bottom of described glass supporter 11 is installed with reflector 16, to improve light reflection effect.
Described glass supporter 11 also occupies and has a cover body 12, described cover body is around described blue-ray LED luminescence chip 15, have a up big and down small conical through-hole in it, the one-tenth being provided with injection moulding in described conical through-hole is positioned at the silica gel glasses lamella 13 outside described blue-ray LED luminescence chip.
Described silica gel glasses lamella 13 comprises body, the upper surface centre position of described body is upwards extended with a hemispherical projections 17, it is leg-of-mutton focusing protruding 18 that described body is formed with cross section around hemispherical projections 17, and the described projection 18 that focuses on has the inclined-plane tilted towards described hemispherical projections 17.
Described modified form LED silicon core chip package comprises a mould bases 21, and described mould bases 21 is connected to the surface of described cover body 12, forms the molding space that supplies silica gel injection moulding between described mould bases 21 and glass supporter 11.
The upper surface of described mould bases 21 has a hemispheric inner groovy 22, it is leg-of-mutton protuberance 23 that the periphery of described inner groovy 22 has cross section, the middle part of described mould bases 21 has a taper hand-hole 24, and the sidepiece of the protuberance 23 of described mould bases 21 is provided with the air vent hole 25 of through mould bases 21 upper and lower surface.
And one carries out the silica gel injection device (not shown) of silica gel injection from described taper hand-hole 24.
Wherein, described silica gel injection device for being automatically injected machine, described in be automatically injected in machine and there is heater automatically to inject after heating silica gel, described in be automatically injected machine be electric piston formula implanter.
Wherein, described silica gel injection device can be soft silica gel container, has heater bottom it, thus manually can inject after heating silica gel.
Thus, after being injected by silica gel, be formed at the glomerate light scattering effect of hemispherical projections shape on LED chip, focus on the protruding middle part that then concentrated on by the light of periphery and penetrate, form the injection effect that in the middle part of in the of, light is strengthened thus.
Known by said structure, modified form LED silicon core chip package tool of the present invention has the following advantages:
1, have employed semicircle and leg-of-mutton in conjunction with astigmatism, improve light radiation response;
2, structure is simple, and production process is simple, colloid excellent bonding performance.
It is evident that, above description and record be only citing instead of in order to limit disclosure of the present invention, application or use.Although described in an embodiment and be described in the drawings embodiment, but the present invention do not limit by accompanying drawing example and describe in an embodiment as the optimal mode thought at present to implement the specific examples of instruction of the present invention, scope of the present invention will comprise any embodiment of specification and the appended claim fallen into above.
Claims (4)
1. a modified form LED silicon core chip package, one LED silica gel chip is encapsulated, described LED silica gel chip comprises circular glass supporter, the upper surface of described glass supporter is installed with one at least two blue-ray LED luminescence chip arranged side by side, described glass supporter also occupies and has a cover body, described cover body, around described blue-ray LED luminescence chip, has a up big and down small conical through-hole, it is characterized in that in it:
Described modified form LED silicon core chip package comprises a mould bases, and described mould bases is connected to the surface of described cover body, forms the molding space that supplies silica gel injection moulding between described mould bases and glass supporter;
The upper surface of described mould bases has a hemispheric inner groovy, it is leg-of-mutton protuberance that the periphery of described inner groovy has cross section, the middle part of described mould bases has a taper hand-hole, and the sidepiece of the protuberance of described mould bases is provided with the air vent hole of through mould bases upper and lower surface.
2. modified form LED silicon core chip package as claimed in claim 1, is characterized in that: also comprise one to carry out silica gel injection silica gel injection device from described taper hand-hole.
3. modified form LED silicon core chip package as claimed in claim 2, it is characterized in that: described silica gel injection device is for being automatically injected machine, described being automatically injected in machine has heater automatically to inject after heating silica gel, described in be automatically injected machine be electric piston formula implanter.
4. modified form LED silicon core chip package as claimed in claim 2, is characterized in that: described silica gel injection device is soft silica gel container, has heater bottom it, thus manually can inject after heating silica gel.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310554708.7A CN104638087A (en) | 2013-11-11 | 2013-11-11 | Improved LED silica gel chip encapsulating structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310554708.7A CN104638087A (en) | 2013-11-11 | 2013-11-11 | Improved LED silica gel chip encapsulating structure |
Publications (1)
Publication Number | Publication Date |
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CN104638087A true CN104638087A (en) | 2015-05-20 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201310554708.7A Pending CN104638087A (en) | 2013-11-11 | 2013-11-11 | Improved LED silica gel chip encapsulating structure |
Country Status (1)
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CN (1) | CN104638087A (en) |
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2013
- 2013-11-11 CN CN201310554708.7A patent/CN104638087A/en active Pending
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PB01 | Publication | ||
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WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150520 |