CN104592906A - 各向异性导电膜和使用其的半导体装置 - Google Patents

各向异性导电膜和使用其的半导体装置 Download PDF

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Publication number
CN104592906A
CN104592906A CN201410602261.0A CN201410602261A CN104592906A CN 104592906 A CN104592906 A CN 104592906A CN 201410602261 A CN201410602261 A CN 201410602261A CN 104592906 A CN104592906 A CN 104592906A
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Prior art keywords
conductive film
anisotropic conductive
weight
adhesive resin
insulation layer
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CN201410602261.0A
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CN104592906B (zh
Inventor
金智软
姜炅求
朴憬修
孙秉勤
申颍株
郑光珍
黄慈英
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Guo Dujianduansucai
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Samsung SDI Co Ltd
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • H—ELECTRICITY
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
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Abstract

揭示了各向异性导电膜和使用其的半导体装置。各向异性导电膜具有三层结构，包含第一绝缘层、导电层和第二绝缘层，其中各向异性导电膜的应力-应变曲线具有如以下方程式1表示的大于0和小于或等于0.2千克力/(平方毫米·％)的斜率A，以及0.4千克力/平方毫米或0.4千克力/平方毫米以上的最大应力(Smax)：斜率(A，单位：千克力/(平方毫米·％))＝(1/2Smax-S0)/x---(1)，其中，Smax：最大应力，x：最大应力的一半(1/2)下的应变(％)，S0：0应变下的应力。本发明的各向异性导电膜具有改进的预压缩性质，且可通过调整斜率A和最大应力使得固化之前的各向异性导电膜初始性质受到控制来促进主要压缩。

Description

各向异性导电膜和使用其的半导体装置
技术领域
本发明涉及各向异性导电膜和使用所述各向异性导电膜的半导体装置。
背景技术
一般来说，各向异性导电膜(anisotropic conductive film，ACF)指通过将导电颗粒分散在例如环氧树脂等树脂中而制备的膜状粘着剂。各向异性导电膜由具有电各向异性和粘着力的聚合物层构成，且在膜的厚度方向上展现导电性质，且在膜的表面方向上展现绝缘性质。
当各向异性导电膜被置于电路板之间且在某些条件下进行热压缩时，电路板的电路端子经由导电颗粒而相互电连接，且绝缘层填充邻近电路端子之间的空间以将导电颗粒相互隔离，进而在电路端子之间提供高绝缘以及导电性。
在使用各向异性导电膜的调制过程中，各向异性导电膜在玻璃板上对准，且接着进行各向异性导电膜经由热压缩而紧固到玻璃衬底的预压缩，接着是离型膜的移除。此处，因为紧固到玻璃衬底的导电层的熔融粘度高于接近离型膜的绝缘层的熔融粘度，所以导电层展现对玻璃衬底的低粘着力，进而频繁导致预压缩故障，以致于在离型膜的移除后，各向异性导电膜完全与玻璃衬底分离，而不是保留在玻璃衬底上。
为了解决这个问题，已在此项技术中建议三层结构的各向异性导电膜。然而，三层结构的常规各向异性导电膜采用厚绝缘层以便确保绝缘层的预压缩性质。在这种状况下，由于固化后的导电膜的分离，而存在连接可靠性不足的问题(第H07-9821A号日本专利公开案)。
此外，在主要压缩中产生故障后，因为各向异性导电膜在经由返工过程移除分接头(tap)后进行手动预压缩，而不是玻璃衬底的设置，所以各向异性导电膜需要高预压缩性质。
另一方面，各向异性导电膜在预压缩时由于压力而经受应力。此时，如果施加到各向异性导电膜的外部应力超过允许最大应力，那么各向异性导电膜无法减轻内部应力而产生裂纹，进而导致例如粘着力等性质的降低以及各向异性导电膜的断裂。此外，当在降低的压力下执行预压缩时，存在膜伸长且膜的预压缩性质降低的问题。
因此，需要能够在固化前控制膜的预压缩性质的新颖方法、通过提高预压缩加工性能同时经由预压缩性质的调整而促进主要压缩而具有改进的形状稳定性和卷稳定性，以及包含这种各向异性导电膜的半导体装置。
发明内容
本发明的目标为提供通过调整应力-应变曲线的斜率和最大应力以实现预压缩性质的控制而具有改进的预压缩性质的各向异性导电膜和使用所述各向异性导电膜的半导体装置。
本发明的另一目标为提供通过经由预压缩性质的改进来促进主要压缩而具有进一步改进的形状稳定性的各向异性导电膜和使用所述各向异性导电膜的半导体装置。
根据本发明的一个实施例，提供一种各向异性导电膜，其中所述各向异性导电膜的应力-应变曲线具有如以下方程式1表示的大于0和小于或等于0.2kgf/(mm2·％)的斜率(A)(所述斜率(A)的单位：千克力/(平方毫米·％))，以及0.4千克力/平方毫米(kgf/mm2)或0.4千克力/平方毫米以上的最大应力(Smax)。
斜率(A，单位：千克力/(平方毫米·％))＝(1/2Smax-S0)/x---(1)
(Smax：最大应力，x：最大应力的一半(1/2)下的应变(％)，S0：0应变下的应力)
根据本发明的另一实施例，提供一种使用各向异性导电膜的半导体装置。
根据本发明的实施例，各向异性导电膜可通过调整应力-应变曲线的斜率和最大应力而提高预压缩性质和主要压缩加工性能来确保形状稳定性，通过减少固化后的分离而具有改进的连接可靠性，且确保足够导电性和对衬底的结合力。
此外，本发明的实施例提供由具有改进的预压缩性质和可靠性测试后连接电阻(post-reliability testing connection resistance)的各向异性导电膜连接的半导体装置，进而确保高温高湿条件下的长使用寿命。
附图说明
结合附图，根据示范性实施例的以下描述，本发明的以上和其它方面、特征和优点将变得显而易见。
图1为根据本发明的一个实施例的各向异性导电膜的截面图。
图2为说明应力-应变曲线的图式。
图3为实例2中所制备的各向异性导电膜的应力-应变曲线。
图4为描绘根据本发明的一个实施例的各向异性导电膜的斜率A和最大应力(Smax)的曲线图。
图5为根据本发明描绘使用ARES(Advanced Rheometric ExpansionSystem)流变仪在某温度下测量第二绝缘层的熔融粘度的方法的曲线图。
图6为展示对比实例3的样本的图片，其中在预压缩故障的评估中，三个样本不展示线条且被不充分地预压缩。
图7为展示实例1的样本的图片，其中在预压缩故障的评估中，所有样本展示线条且具有良好结果。
图8为根据本发明的一个实施例的半导体装置的截面图，所述半导体装置包含第一连接构件50和第二连接构件60，其经由各向异性导电粘着膜10而相互连接，且分别包含第一电极70和第二电极80。此处，当各向异性导电粘着膜10置于具有第一电极70的第一连接构件50和具有第二电极80的第二连接构件60之间且被压缩时，第一电极70和第二电极80经由导电颗粒40而相互电连接。
【主要元件标号说明】
1：第一绝缘层
2：导电层
3：第二绝缘层
4：各向异性导电膜
5：导电颗粒
10：各向异性导电膜
40：导电颗粒
50：第一连接构件
60：第二连接构件
70：第一电极
80：第二电极
具体实施方式
下文中，将更详细地描述本发明的实施例。为了清楚起见，将省略对所属领域的技术人员显而易见的细节的描述。
图1为根据本发明的一个实施例的三层结构的各向异性导电膜4的截面图。
根据本发明的实施例，各向异性导电膜4可具有三层或更多层的多层结构。具体来说，各向异性导电膜4可具有包含第一绝缘层1、导电层2和第二绝缘层3的三层结构。更具体来说，第一绝缘层1可堆叠在含有导电颗粒5的导电层2的一个表面上，且第二绝缘层3可堆叠在导电层2的另一表面上。
在根据实施例的各向异性导电膜4中，不含有导电颗粒5的绝缘层1、3分别形成在含有导电颗粒5以进行电连接的导电层2的两个表面上，进而在膜的压缩后，将绝缘性质赋予各向异性导电膜而不妨碍导电颗粒5的压缩。此外，每一绝缘层由单一层构成，而不是在相关技术中由双层结构构成，且因此，可用绝缘层实现端子之间的空间的充足填充。
如本文中所使用，术语“堆叠”意味某层形成在另一层的一个表面上，且可与涂层或层压片互换地使用。
第一绝缘层1可具有2微米(μm)或2微米以下的厚度，导电层2可具有2微米到10微米的厚度，且第二绝缘层3可具有6微米到18微米的厚度。具体来说，第一绝缘层1可具有1微米或1微米以下的厚度，导电层2可具有2微米到8微米的厚度，且第二绝缘层3可具有6微米到16微米的厚度。
更具体来说，导电层2可具有2.5微米到6微米的厚度，且第二绝缘层3可具有7微米到15微米的厚度。
当根据此实施例的各向异性导电膜的第一绝缘层1具有2微米或2微米以下、具体来说1微米或1微米以下的厚度时，各向异性导电膜可促进预压缩同时确保充足的导电性，减少固化后的分离，且确保对衬底的结合力以便改进连接可靠性，进而改进半导体装置的可靠性。
预压缩之前的应力-应变曲线可使用根据此实施例的各向异性导电膜来获得，且可用于基于预压缩之前的各向异性导电膜的性质来促进预压缩加工性能和主要压缩加工性能。
如本文中所使用，术语“应力-应变曲线”可与例如应力-应变图或应力-畸变曲线等其它术语互换地使用，且可通过测量施加到材料的试样的负荷和变形的程度来获得。
接着，将参看图2来描述应力-应变曲线。在应力-应变曲线中，弹性区域表示展示线性应力-应变关系直到屈服点(yield point)的部分，其中，在弹性区域中由线性方程式表示的曲线的斜率被称为弹性模数(E)或杨氏模数。随着材料的试样继续变形，由于变形强化，应力升高直到最大应力。
在图2中，屈服点意味弹性区域转换到塑性区域的极限点，应力-应变曲线下的面积指示材料的韧性，且曲线中的弹性区域的三角形面积指示材料的回弹性。在实际应力-应变曲线中，断裂点可在屈服点之前或附近出现，且屈服点的高度或曲线的形状取决于材料的种类而变化。
图3展示根据本发明的一个实施例的各向异性导电膜的应力-应变曲线。
各向异性导电膜的应力-应变曲线可通过以下方法而获得，但不限于此。举例来说，在膜样本通过手工剖幅而切割为(例如)2毫米×10毫米的大小且安装在通用测试仪(UTM，H5KT，亨斯菲尔德(Hounsfield))上的情况下，针对每一样本测量膜样本的拉伸强度两次。
具体来说，可通过在x轴上绘制应变(％)且在y轴上绘制应力(千克力/平方毫米)而获得应力-应变曲线，以使得曲线上的某点可由(x，y)坐标指示。
接着，参看图4，将描述应力-应变曲线的斜率(A)以及最大应力(Smax)。
在此实施例中，应力-应变曲线的斜率(A，单位：千克力/(平方毫米·％))指示从指示最大应力(Smax)的50％的坐标(x，1/2Smax)到0应变下的坐标(0，S0)的变化，且可通过方程式1来计算。
斜率(A，单位：千克力/(平方毫米·％))＝(1/2Smax-S0)/x---(1)
(Smax：最大应力，x：最大应力的一半(1/2)下的应变(％)，S0：0应变下的应力)
在根据此实施例的各向异性导电膜的应力-应变曲线中，斜率(A)是在各向异性导电膜的固化之前测量的，且与固化之前的各向异性导电膜的预压缩性质或初始性质相关。
因为S0为应变为0时的应力，所以S0可为0。
在应力-应变曲线中，最大应力(Smax)指示应力的最高值，且意味因膜的变形而导致的应力的极限。
在一个实例中，应力-应变曲线的斜率(A)以及最大应力(Smax)可在各向异性导电膜的固化之前进行测量，且可基于每一层的厚度、膜组合物的组分及其量来调整。
根据实施例，各向异性导电膜的应力-应变曲线可具有如以下方程式1表示的大于0和小于或等于0.2千克力/(平方毫米·％)的斜率(A)，以及0.4千克力/平方毫米或0.4千克力/平方毫米以上的最大应力(Smax)。
具体来说，斜率(A)的范围可为0.05千克力/(平方毫米·％)到0.2千克力/(平方毫米·％)，且最大应力(Smax)可为0.5千克力/平方毫米或0.5千克力/平方毫米以上。更具体来说，斜率(A)的范围可为0.1千克力/(平方毫米·％)到0.2千克力/(平方毫米·％)，且最大应力(Smax)的范围可为0.5千克力/平方毫米到1.0千克力/平方毫米。
斜率(A，单位：千克力/(平方毫米·％))＝(1/2Smax-S0)/x---(1)
(Smax：最大应力，x：最大应力的一半(1/2)下的应变(％)，S0：0应变下的应力)
通过将各向异性导电膜的应力-应变曲线的斜率(A)和最大应力(Smax)调整为处于前述范围内，可控制各向异性导电膜的预压缩性质。明确地说，因为斜率(A)和最大应力(Smax)可指示预压缩后的膜的初始性质(例如，应力、硬度、弹性模数等)，所以各向异性导电膜可通过将斜率(A)和最大应力(Smax)调整为处于前述范围内而减少预压缩故障，可防止预压缩后的伸长以改进可靠性，且可促进主要压缩加工性能的调整而不断裂。
此外，通过将斜率(A)和最大应力(Smax)调整为处于前述范围内，各向异性导电膜可具有改进的固化后的初始连接电阻(initial connectionresistance)以及高温/高湿条件下的可靠性测试后连接电阻，进而确保改进的连接可靠性。
此外，在根据本实施例的应力-应变曲线中，试样断裂时的应变(D)可为10％或10％以上，具体来说，20％或20％以上，例如，25％或25％以上。
在此应变范围内，各向异性导电膜实现稳定的预压缩而不碎裂或断裂。
如通过ARES流变仪所测量，根据本发明的一个实施例的各向异性导电膜可在50℃到60℃下具有20,000帕斯卡·秒(Pa·s)到100,000帕斯卡·秒、更具体来说20,000帕斯卡·秒到80,000帕斯卡·秒、例如20,000帕斯卡·秒到60,000帕斯卡·秒或20,000帕斯卡·秒到50,000帕斯卡·秒的熔融粘度。
在此实施例中，各向异性导电膜的预压缩可在50℃到60℃下执行，且各向异性导电膜的流动性可控制在50℃到60℃下的各向异性导电膜的熔融粘度范围内，进而促进预压缩过程。
此外，根据本发明的实施例的各向异性导电膜的熔融粘度可根据导电膜的厚度和膜组合物的组分及其量来调整。
具体来说，各向异性导电膜的熔融粘度取决于作为各向异性导电膜中的最厚层的第二绝缘层。举例来说，如通过ARES流变仪所测量，根据本发明的实施例的各向异性导电膜中的第二绝缘层可在50℃到60℃下具有10,000帕斯卡·秒到70,000帕斯卡·秒、10,000帕斯卡·秒到60,000帕斯卡·秒、具体来说10,000帕斯卡·秒到40,000帕斯卡·秒、更具体来说20,000帕斯卡·秒到38,000帕斯卡·秒、例如22,000帕斯卡·秒到38,000帕斯卡·秒的熔融粘度。
在这些范围内，整个各向异性导电膜的熔融粘度可得以调整，且各向异性导电膜可展现足够粘着力且可均匀压缩在玻璃衬底上，进而改进预压缩性质。此外，各向异性导电膜具有改进的薄膜性质以减少预压缩故障，且允许绝缘层充分地填充端子之间的空间，进而改进连接可靠性。
一般来说，当对粘着剂进行加热时，粘着剂的粘度在初始区(A1区)中由于温度升高而逐渐降低。在达到某时间点(T0)后，粘着剂熔融且展现最低粘度(η0)。接着，当粘着剂的温度进一步升高时，粘着剂的固化得以进行(A2区)以使得粘着剂的粘度逐渐升高。接着，当完成固化(A3区)时，粘着剂的粘度通常维持在恒定的水准。如本文中所使用，如通过ARES流变仪所测量的50℃到60℃下的第二绝缘层的熔融粘度可根据树脂的比例和/或组成比来调整，且可通过另外提供无机颗粒来调整。
此外，根据本发明的实施例的各向异性导电膜可具有0.5欧姆(Ω)或0.5欧姆以下的连接电阻，这是在1兆帕(MPa)到3兆帕的负荷(load)下在50℃到70℃下，对置于玻璃衬底与集成电路驱动器芯片(Integrated Circuit(IC)driver chp)或集成电路芯片之间的各向异性导电膜进行预压缩持续1到3秒，和在60兆帕到80兆帕的负荷下在140℃到160℃下进行压缩持续3到7秒后，立即在25℃下测量的。具体来说，各向异性导电膜可具有0.1欧姆或0.1欧姆以下、更具体来说0.05欧姆或0.05欧姆以下的连接电阻。
在连接电阻的这个范围内，各向异性导电膜可防止细间距电极的信号干扰。
举例来说，各向异性导电膜的连接电阻可通过以下方法而测量，但不限于此。在60℃、1秒和1.0兆帕的负荷的预压缩条件下以及150℃、5秒和70兆帕的主要压缩条件下将各向异性导电膜连接到半导体装置，以针对每一条件制备10个试样。接着，使用电阻测试器(日置有限公司(Hioki Co.，Ltd.))通过施加1毫安的电流而测量每一试样的连接电阻，且计算初始连接电阻的平均值。
具体来说，各向异性导电膜可在1.0兆帕到2.0兆帕的负荷下在55℃到65℃下进行预压缩持续1到2秒，且在65兆帕到75兆帕的负荷下在145℃到155℃下进行主要压缩持续4到6秒。
此外，根据此实施例的各向异性导电膜可具有5欧姆或5欧姆以下的可靠性测试后连接电阻，这是在各向异性导电膜在前述条件下进行预压缩和压缩且保持在85℃和85％相对湿度下持续500小时之后测量的。具体来说，各向异性导电膜可具有4欧姆或4欧姆以下、更具体来说3欧姆或3欧姆以下、例如2欧姆或2欧姆以下或1欧姆或1欧姆以下的可靠性测试后连接电阻。
在这范围内，各向异性导电膜可甚至在高温高湿条件下也可维持低连接电阻，进而改进连接可靠性。此外，可在高温高湿条件下长期使用由根据此实施例的各向异性导电膜连接的半导体装置。
举例来说，各向异性导电膜的可靠性测试后连接电阻可通过以下方法而测量，但不限于此。各向异性导电膜在初始连接电阻的测量条件下进行压缩和加热(预压缩和主要压缩)且保持在85℃和85％相对湿度(RH)下持续500小时以执行高温/高湿可靠性测试。接着，测量每一试样的连接电阻，且计算连接电阻的平均值。
下文中，将详细地描述根据一个实施例的各向异性导电膜中的每一层。各向异性导电膜中的每一层可包含粘合剂树脂、环氧树脂、固化剂、无机颗粒和偶联剂，其中导电层可还包含导电颗粒。
具体来说，将详细地描述通常包含在相应层中的粘合剂树脂、环氧树脂、固化剂、无机颗粒和偶联剂。
粘合剂树脂
在本发明的实施例中，可使用通常用于本领域中的任何粘合剂树脂，而不受限制。
粘合剂树脂的实例可包含聚酰亚胺树脂、聚酰胺树脂、苯氧基树脂、聚甲基丙烯酸酯树脂、聚丙烯酸酯树脂、聚氨基甲酸酯树脂、聚酯树脂、聚酯型氨基甲酸酯树脂、聚乙烯醇缩丁醛树脂、苯乙烯-丁二烯-苯乙烯(SBS)树脂及其环氧化改性物、苯乙烯-乙烯-丁烯-苯乙烯(SEBS)树脂及其改性物、丙烯腈丁二烯橡胶(NBR)或其氢化化合物。这些粘合剂树脂可单独使用或以其组合来使用。
具体来说，视需要可使用具有不同重均分子量(Mw)且属于同一种粘合剂树脂的粘合剂树脂，且视需要可使用具有相同重均分子量的两种或两种以上粘合剂树脂。
在第一绝缘层中，关于固体含量，以第一绝缘层的总重量计，所存在的粘合剂树脂的量可为10重量％到60重量％，具体来说，20重量％到50重量％。
此外，在导电层中，关于固体含量，以导电层的总重量计，所存在的粘合剂树脂的量可为10重量％到50重量％，具体来说，10重量％到40重量％。
此外，在第二绝缘层中，关于固体含量，以第二绝缘层的总重量计，所存在的粘合剂树脂的量可为10重量％到50重量％，具体来说，10重量％到40重量％。
具体来说，第二绝缘层可含有具有不同玻璃化转变温度的第一粘合剂树脂和第二粘合剂树脂。
更具体来说，第一粘合剂树脂可具有高于第二粘合剂树脂的玻璃化转变温度(Tg)。更具体来说，第一粘合剂树脂可具有90℃或90℃以上、例如95℃或95℃以上的玻璃化转变温度，且第二粘合剂树脂可具有小于90℃、例如60℃到小于90℃、具体来说70℃到小于90℃、例如70℃到80℃的玻璃化转变温度。膜组合物的硬度可随着粘合剂树脂的玻璃化转变温度升高而升高。
当根据此实施例的第二绝缘层包含的第一粘合剂树脂的量相同于或大于所包含的第二粘合剂树脂的量时，第一粘合剂树脂与第二粘合剂树脂的重量比的范围可为1∶0.2到1∶1。当根据此实施例的第二绝缘层包含的第一粘合剂树脂的量小于所包含的第二粘合剂树脂的量时，第一粘合剂树脂与第二粘合剂树脂的重量比的范围可为1∶4到1∶10。
在粘合剂树脂的这些范围内，对应层可具有改进的流动性，且各向异性导电膜可在预压缩后展现适当的粘着力。此外，可根据第二绝缘层中的粘合剂树脂的重量比来调整第二绝缘层的熔融粘度。
环氧树脂
环氧树脂可包含选自由以下各物质组成的群组中的环氧单体中的至少一种：双酚型、酚醛型、缩水甘油型、脂族和脂环族环氧单体、其环氧寡聚物及其环氧聚合物。关于环氧树脂，可使用任何典型材料，而不受限制，所述典型材料包含选自双酚型、酚醛型、缩水甘油型、脂族和脂环族环氧分子的至少一种偶联结构。
在室温下具有固相的环氧树脂和在室温下具有液相的环氧树脂可一起使用。此外，柔性环氧树脂也可一起使用。在室温下具有固相的环氧树脂的实例可包含苯酚酚醛型环氧树脂、甲酚酚醛型环氧树脂、含有二环戊二烯的环氧树脂和双酚A或F型聚合物或经改性的环氧树脂，但不限于此。
在室温下具有液相的环氧树脂的实例可包含双酚A或F型环氧树脂或其组合，但不限于此。
柔性环氧树脂的实例可包含经二聚酸改性的环氧树脂、含有丙二醇的环氧树脂、经氨基甲酸酯改性的环氧树脂等。
此外，芳族环氧树脂可选自由萘、蒽和芘树脂组成的群组，但不限于此。
此外，用于根据此实施例的各向异性导电膜中的环氧树脂可包含经羟基取代的环氧树脂。此处，经羟基取代的环氧树脂可包含由式1表示的氢化双酚A型环氧单体或由式2表示的氢化双酚A型环氧寡聚物。
举例来说，在式2中，n为1到50的整数。
在第一绝缘层中，关于固体含量，以第一绝缘层的总重量计，所存在的环氧树脂的量可为20重量％到70重量％，具体来说，30重量％到70重量％，例如，40重量％到60重量％。
此外，在导电层中，关于固体含量，以导电层的总重量计，所存在的环氧树脂的量可为1重量％到30重量％，具体来说，1重量％到20重量％。
此外，在第二绝缘层中，关于固体含量，以第二绝缘层的总重量计，所存在的环氧树脂的量可为10重量％到60重量％，具体来说，20重量％到60重量％，例如，30重量％到50重量％。
具体来说，在第二绝缘层中，关于固体含量，以第二绝缘层的总重量计，环氧树脂的含量可高于粘合剂树脂的含量。具体来说，在第二绝缘层中，环氧树脂与粘合剂树脂的重量比可高于1∶1和小于或等于2∶1，具体来说，1.1∶1到1.95∶1，例如，1.2∶1到1.9∶1。
在相应层中的环氧树脂的这些范围内，各向异性导电膜可确保优良的膜形成和粘着力，且可展现适用于预压缩的熔融粘度，以使得膜可在预压缩后均匀压缩在玻璃衬底上。此外，各向异性导电膜可通过补偿单一绝缘层的不足的填充来改进绝缘可靠性。
固化剂
可使用能够使环氧树脂固化的任何固化剂，而不受限制。固化剂的实例可包含酸酐固化剂、胺固化剂、咪唑固化剂、异氰酸酯固化剂、酰胺固化剂、酰肼固化剂、苯酚固化剂、阳离子固化剂等。这些固化剂可单独使用或以其组合来使用。
根据此实施例，固化剂可为阳离子固化剂，例如，六氟化铵/锑。
因为固化剂在室温下是与环氧树脂作为混合物来使用，所以固化剂必须在室温下不与环氧树脂反应，且在预定温度或预定温度以上具有活性以经由与环氧树脂的活性反应而展现固化剂的性质。
可使用能够以热活化能量产生阳离子的任何典型阳离子固化剂，而不受限制。举例来说，可使用阳离子潜在固化剂(cationic latent curing agent)。
具体来说，阳离子潜在固化剂的实例可包含：鎓盐化合物，例如，芳族重氮盐、芳族锍盐、脂族锍盐、芳族錪盐、鏻盐、吡啶鎓盐、硒盐等；化合物络合物、例如，金属芳烃络合物、硅醇/铝络合物等；含有甲苯磺酸基的化合物，例如，用于提供捕获电子的功能的甲苯磺酸安息香酯(benzoin tosylate)、甲苯磺酸邻硝基苄酯(o-nitrobenzyl tosylate)等；等等。
更具体来说，可使用在产生阳离子方面具有高效率的锍盐化合物，例如，芳族锍盐化合物或脂族锍盐化合物。
此处，当这种阳离子潜在固化剂形成盐结构时，六氟锑酸盐(hexafluoroantimonate)、六氟磷酸盐(hexafluorophosphate)、四氟硼酸盐(tetrafluoroborate)、五氟苯基硼酸盐(pentafluorophenyl borate)等可在形成反应副盐(reactive side salt)时用作反离子(counter ion)。
在第一绝缘层中，关于固体含量，以第一绝缘层的总重量计，所存在的固化剂的量可为0.1重量％到10重量％，具体来说，1重量％到10重量％。
此外，在导电层中，关于固体含量，以导电层的总重量计，所存在的固化剂的量可为0.5重量％到10重量％，具体来说，1重量％到10重量％。
此外，在第二绝缘层中，关于固体含量，以第二绝缘层的总重量计，所存在的固化剂的量可为0.5重量％到10重量％，具体来说，1重量％到10重量％。
在这范围内，固化剂可允许在整个固化产物中充足形成丙烯酸酯固化结构，可防止固化产物的硬度的过量提高以防止界面剥离力和粘着力的降低，且可防止因剩余的固化剂所致的稳定性和可靠性的降低。
根据此实施例，导电层可还包含无机颗粒和导电颗粒。
无机颗粒
根据一个实施例，导电层可包含无机颗粒以便调整导电层的流动性。无机颗粒的实例包含二氧化硅(SiO2)、Al2O3、TiO2、ZnO、MgO、ZrO2、PbO、Bi2O3、MoO3、V2O5、Nb2O5、Ta2O5、WO3、In2O3等。
具体来说，二氧化硅可用作无机颗粒。二氧化硅可包含：通过例如溶胶-凝胶处理、沉降等液相工艺制备的二氧化硅；通过例如火焰氧化等气相工艺制备的二氧化硅；未经粉碎而从二氧化硅凝胶获得的非粉状二氧化硅；锻制二氧化硅；熔融二氧化硅；等等。二氧化硅颗粒可具有球形、片形、无边形等。这些二氧化硅可单独使用或以其组合来使用。
且，第一绝缘层和第二绝缘层也可包含无机颗粒。
在第一绝缘层中，关于固体含量，以第一绝缘层的总重量计，所存在的二氧化硅颗粒的量可为1重量％到30重量％，具体来说，1重量％到20重量％。
此外，在导电层中，关于固体含量，以导电层的总重量计，所存在的二氧化硅颗粒的量可为1重量％到30重量％，具体来说，1重量％到20重量％。
此外，在第二绝缘层中，关于固体含量，以第二绝缘层的总重量计，所存在的二氧化硅颗粒的量可为5重量％到40重量％，具体来说，10重量％到40重量％。
导电层的流动性可基于这范围内的二氧化硅颗粒的量经由导电层的熔融粘度的调整来调整。
此外，如果二氧化硅颗粒具有大于导电颗粒的颗粒大小(平均颗粒大小)，那么导电性可存在问题。具体来说，包含在导电层中的二氧化硅颗粒可具有5纳米到20纳米的平均颗粒大小。
因为相应层含有含量和平均颗粒大小在这些范围内的二氧化硅颗粒，所以各向异性导电膜可经由熔融粘度的调整而确保充足流动性，以允许电极端子之间的空间以导电层充分填充，且可由于无机颗粒的绝缘性质而具有改进的绝缘可靠性。
根据此实施例，各向异性导电膜的导电层可还包含导电颗粒。
导电颗粒
导电颗粒包含在导电层中以改进端子之间的导电性，且可使用通常在此项技术中已知的任何导电颗粒，而不受限制。
导电颗粒的实例可包含：金属颗粒，例如，金(Au)、银(Ag)、镍(Ni)、铜(Cu)和焊料颗粒；碳颗粒；树脂颗粒，例如，以例如金(Au)、银(Ag)、镍(Ni)等金属涂布的聚乙烯、聚丙烯、聚酯、聚苯乙烯、聚乙烯醇及其经改性的树脂颗粒；以及通过进一步将绝缘颗粒涂布到金属涂布的聚合物树脂颗粒上而获得的绝缘导电颗粒，但不限于此。这些导电颗粒可单独使用或以其组合来使用。
取决于将使用的电路的间距及其用途，导电颗粒的平均颗粒大小可选自1微米到20微米的范围。具体来说，导电颗粒可具有1微米到10微米的平均颗粒大小。
在一些实施例中，在各向异性导电膜的导电层中，关于固体含量，以导电层的总重量计，所存在的导电颗粒的量可为20重量％到70重量％，具体来说，30重量％到60重量％。
在平均颗粒大小和含量的这些范围内，导电颗粒可容易在端子之间压缩以确保稳定的连接可靠性，且可通过改进导电性而降低连接电阻。
根据本发明的实施例的各向异性导电膜中的相应层可还包含硅烷偶联剂，以便提高由无机颗粒与有机粘合剂树脂的表面之间的化学偶联导致的粘着力。
偶联剂
可使用此项技术中已知的任何偶联剂，而不受限制。举例来说，可使用硅烷偶联剂。硅烷偶联剂的实例包含：含有环氧基的硅烷偶联剂，例如，2-(3，4-环氧环己基)乙基三甲氧基硅烷、3-缩水甘油氧基三甲氧基硅烷(3-glycidoxytrimethoxysilane)和3-缩水甘油氧基丙基三乙氧基硅烷；含有氨基(amino group)的硅烷偶联剂，例如，N-2-(氨乙基)-3-氨丙基甲基二甲氧基硅烷、N-2-(氨乙基)-3-氨丙基三甲氧基硅烷、N-2-(氨乙基)-3-氨丙基三乙氧基硅烷、3-氨丙基三甲氧基硅烷、3-氨丙基三乙氧基硅烷、3-三乙氧基硅基-N-(1，3-二甲基亚丁基)丙胺和N-苯基-3-氨丙基三甲氧基硅烷；含有巯基的硅烷偶联剂，例如，3-巯基丙基甲基二甲氧基硅烷和3-巯基丙基三乙氧基硅烷；以及含有异氰酸酯的硅烷偶联剂，例如，3-异氰酸酯丙基三乙氧基硅烷。这些硅烷偶联剂可单独使用或以其组合来使用。
具体来说，在第一绝缘层中，关于固体含量，以第一绝缘层的总重量计，所存在的硅烷偶联剂的量可为0.1重量％到10重量％，具体来说，0.1重量％到5重量％。
此外，在导电层中，关于固体含量，以导电层的总重量计，所存在的硅烷偶联剂的量可为0.1重量％到10重量％，具体来说，0.1重量％到7重量％。
此外，在第二绝缘层中，关于固体含量，以第二绝缘层的总重量计，所存在的硅烷偶联剂的量可为0.1重量％到10重量％，具体来说，0.1重量％到5重量％。
在偶联剂的这个含量范围内，各向异性导电膜可展现优良键结可靠性。
在一些实施例，各向异性导电膜的导电层、第一绝缘层和第二绝缘层可还包含其它添加剂以便将额外性质赋予各向异性导电膜，而不降低各向异性导电膜的基本性质。
其它添加剂
各向异性导电膜可还包含添加剂，例如，阻聚剂、增粘剂、抗氧化剂、热稳定剂、固化促进剂等。这些添加剂的量可取决于膜的用途和所要效果而按照各种方式来确定，且为所属领域的技术人员所熟知。
根据本发明的实施例的制备各向异性导电膜的方法不受特定限制，且可使用此项技术中已知的任何特定方法，而不受限制。
形成各向异性导电膜不需要特殊设备或装备。举例来说，可通过以下方式来制备各向异性导电膜：将粘合剂树脂溶解在有机溶剂中；将其它组分添加到粘合剂树脂；搅拌组分持续预定时间段；将混合物涂覆到离型膜上达适当厚度，例如，10微米到50微米；以及对混合物进行干燥持续足以使有机溶剂挥发的时间，进而提供具有单层结构的各向异性导电膜。
此处，可使用任何典型有机溶剂，而不受限制。在此实施例中，重复前述程序两次或两次以上，进而提供具有多层结构的各向异性导电膜。
具体来说，将参看图8来描述根据本发明的一个实施例的半导体装置。
参看图8，根据本发明的一个实施例的半导体装置包含：第一连接构件50，具有第一电极70；第二连接构件60，具有第二电极80；以及各向异性导电膜10，设置于第一连接构件50与第二连接构件60之间且经由导电颗粒40而将第一电极70电连接到第二电极80。
各向异性导电膜10可为根据本发明的其它实施例的各向异性导电膜。
具体来说，在根据实施例的半导体装置中，当各向异性导电膜10置于具有第一电极70的第一连接构件50与具有第二电极80的第二连接构件60之间且被压缩时，第一电极70和第二电极80经由导电颗粒40而相互连接。
在一个实施例中，关于材料、厚度、大小和互连性，第一连接构件和第二连接构件可具有类似结构。第一连接构件和第二连接构件可具有约20微米到约100微米的厚度。
在另一实施例中，关于材料、厚度、大小和互连性，第一连接构件和第二连接构件可具有不同结构和功能。
第一连接构件或第二连接构件可由(例如)集成电路芯片(IC芯片)、驱动器IC、玻璃、印刷电路板(Printed Circuit Board，PCB)、fPCB、COF、TCP和ITO玻璃形成，但不限于此。第一电极或第二电极可为突起电极或平坦电极。当第一电极和第二电极为突起电极时，这些电极可具有约2.50微米到约10微米的高度(H)、约50微米到约120微米的宽度(W)，且电极之间的间隙(G)为约50微米到约110微米。
举例来说，电极具有约2.50微米到约9微米的高度(H)、约50微米到约100微米的宽度(W)，且间隙(G)为约60微米到约100微米。
当第一电极和第二电极为突起电极时，这些电极具有约500埃到约1200埃的高度(H)。
第一电极或第二电极可由ITO、铜、硅和IZO形成，但不限于此。
举例来说，平坦电极可具有800埃到1200埃的厚度，且突起电极可具有6微米到10微米的高度。在这种状况下，绝缘层可具有4微米到12微米的厚度以展现充足粘着力。具体来说，平坦电极可具有1000埃的厚度，且突起电极可具有8微米的高度。在这种状况下，绝缘层可具有6微米到10微米的厚度。
本领域中已知的任何合适方法可用于制造根据本发明的实施例的半导体装置。
接着，将参考一些实例来更详细地描述本发明。然而，应理解，提供这些实例只是为了进行说明且决不应理解为限制本发明。
实例和对比实例
如表1所列而制备第一绝缘层、导电层和第二绝缘层。每一层中的组分是以重量％为单位而表示的。
表1
第一粘合剂树脂：双酚A苯氧基树脂(三菱有限公司(Mitsubishi Co.，Ltd.)，产品名称：E1256，Tg：98℃，重均分子量(MW)：50,000克/摩尔)
第二粘合剂树脂：双酚A/F苯氧基树脂(三菱有限公司，产品名称：E4275，Tg：75℃，重均分子量(MW)：60,000克/摩尔)
第一环氧树脂：基于环氧丙烷的环氧树脂(艾迪科公司(AdekaCorporation)，产品名称：EP-4000S)
第二环氧树脂：基于环氧丙烷的环氧树脂(艾迪科公司，产品名称：EP-4010S)
固化剂：阳离子固化剂(三信化学有限公司(Samshin Chemical Co.，Ltd.)，产品名称：SI-60L)
无机颗粒：7纳米二氧化硅(德固赛公司(Degussa GmbH)，产品名称：R812)
导电颗粒：3微米导电颗粒(积水化学有限公司(Sekisui Chemical Co.，Ltd.)，产品名称：AUL704)
偶联剂：硅烷偶联剂(信越有限公司(Shin-Etsu Co.，Ltd.)，产品名称：KBM403)
实例1
第一绝缘层组合物的制备
使用C混合器而将30重量％的第一粘合剂树脂(三菱有限公司，产品名称：E1256)、23重量％的第一环氧树脂(艾迪科公司，产品名称：EP-4000S)和30重量％的第二环氧树脂(艾迪科公司，产品名称：EP-4010S)混合并搅拌持续5分钟。接着，在将5重量％的阳离子固化剂(三信化学有限公司，产品名称：SI-60L)添加到混合物后，将7纳米二氧化硅(德固赛公司，产品名称：R812)和硅烷偶联剂(信越有限公司，产品名称：KBM403)进一步添加到混合物，接着使用C混合器来搅拌持续1分钟(以使得混合物的温度不超过60℃)，进而形成第一绝缘层组合物。
导电层组合物的制备
以与第一绝缘层组合物的制备相同的方式制备导电层组合物，不同之处在于如表1所示而调整粘合剂树脂、环氧树脂、固化剂、二氧化硅颗粒和偶联剂的量，且添加3微米导电颗粒(AUL704，积水化学有限公司)。
第二绝缘层组合物的制备
以与第一绝缘层组合物的制备相同的方式制备第二绝缘层组合物，不同之处在于如表1所示而调整粘合剂树脂、环氧树脂、固化剂、二氧化硅颗粒和偶联剂的量。
各向异性导电膜的制备
将第一绝缘层组合物涂布到聚对苯二甲酸乙二醇酯离型膜的一个表面上且在70℃下用热空气干燥持续5分钟以在1.0微米厚的基础膜上形成1.0微米厚的第一绝缘层。
接着，使用导电层组合物而在第一绝缘层上形成4微米厚的导电层，且，使用第二绝缘层组合物而在导电层上形成12微米厚的第二绝缘层，进而制备各向异性导电膜。
实例2
通过如表1所列而调整第二绝缘层中的相应组分的量而以与实例1相同的方式制备各向异性导电膜。
实例3
通过如表1所列而调整第二绝缘层中的相应组分的量而以与实例1相同的方式制备各向异性导电膜。
对比实例1
通过如表1所列而调整第二绝缘层中的相应组分的量而以与实例1相同的方式制备各向异性导电膜。
对比实例2
通过如表1所列而调整第二绝缘层中的相应组分的量而以与实例1相同的方式制备各向异性导电膜。
对比实例3
通过如表1所列而调整第二绝缘层中的相应组分的量而以与实例1相同的方式制备各向异性导电膜。
对比实例4
通过如表1所列而调整第二绝缘层中的相应组分的量而以与实例1相同的方式制备各向异性导电膜。
表2展示实例和对比实例的第二绝缘层中的粘合剂树脂的比率
表2
实验实例1
最低熔融粘度的测量
使用ARES G2流变仪(美国热分析仪器公司(TAInstruments))而在150微米厚的样本上测量60℃下的最低熔融粘度，同时在30℃到200℃的温区中以10℃/分的温度升高速率和10弧度/秒的频率提高样本的温度。测量结果展示在表3中。
表3
实验实例2
应力-应变曲线、斜率(A)、最大应力(Smax)和样本断裂时的应变(D)的测量
如下测量实例和对比实例中所制备的每一各向异性导电膜的应力-应变曲线的斜率(A)和最大应力(Smax)。
在膜样本通过手工剖幅而切割为2毫米×10毫米的大小且安装在通用测试仪(UTM，H5KT，亨斯菲尔德)上的情况下，针对每一样本测量膜样本的拉伸强度两次。接着，计算平均拉伸强度以获得应力-应变曲线。
在应力-应变曲线上，测量最大应力(Smax)(千克力/平方毫米)且获得从指示最大应力(Smax)的50％的坐标(x，1/2Smax)到0应变下的坐标(0，S0)的变化以根据方程式1来计算斜率(A)(单位：千克力/(平方毫米·％))。
斜率(A，单位：千克力/(平方毫米·％))＝(1/2Smax-S0)/x---(1)
(Smax：最大应力，x：最大应力的一半(1/2)下的应变(％)，S0：0应变下的应力)
在以下表2中，展示最大应力(Smax)、样本断裂时的应变(D)和指示从指示最大应力的50％的坐标(x，1/2Smax)到0应变下的坐标(0，S0)的变化的应力-应变曲线的斜率(A，单位：千克力/(平方毫米·％))。
实验实例3
预压缩故障的评估
如下执行实例和对比实例中所制备的每一各向异性导电膜的预压缩故障的评估。
在涂布以2000埃厚的ITO层的0.5T玻璃衬底上在1兆帕的负荷下在60℃下进行预压缩持续1秒后，将不展示线条的样本(参见图6)评估为“低劣”，且将展示线条的样本评估为“良好”(参见图7)。接着，对被评估为“良好”的样本的数目进行计数以确定预压缩故障。
实验实例4
连接电阻的测量
如下测量实例和对比实例中所制备的每一各向异性导电膜的连接电阻。
作为被粘体构件，使用具有1200微米的凸块面积的1200微米IC芯片和2000埃厚的氧化铟锡(ITO)电路的玻璃衬底。在1兆帕的负荷下在60℃下进行预压缩持续1秒后，将各向异性导电膜置于被粘体构件之间且使其在70兆帕的负荷下在150℃下进行主要压缩持续5秒，进而制备样本。
通过施加1毫安的电流使用电阻测试器(日置Hitester)来测量每一样本的电阻。
实验实例5
可靠性测试后连接电阻的测量
如下测量实例和对比实例中所制备的每一各向异性导电膜的可靠性测试后连接电阻。
在实验实例4的条件下进行压缩后，将各向异性导电膜保持在85℃和85％相对湿度下持续500小时以评估高温高湿条件下的可靠性。接着，以与实验实例4相同的方式测量每一各向异性导电膜的连接电阻。
实验实例2到5的测量结果展示在表4中。
表4
参看表4，在应力-应变曲线中斜率处于大于0到0.2千克力/(平方毫米·％)的范围中且最大应力(Smax)为0.4千克力/平方毫米或0.4千克力/平方毫米以上(实例1到3)的状况下，确认在预压缩故障测试中，各向异性导电膜被评定为“良好”，进而展现良好的预压缩性质。此外，确认各向异性导电膜具有0.5欧姆或0.5欧姆以下的初始连接电阻和5欧姆或5欧姆以下的可靠性测试后连接电阻，进而甚至在高温高湿条件下也展现良好的连接电阻。
相比之下，在各向异性导电膜不满足根据本发明的斜率和最大应力条件中的一者的状况下，在预压缩故障测试中，各向异性导电膜具有至少三个到6个“低劣”样本，且展现初始连接电阻和可靠性测试后连接电阻的升高。
因此，因为根据本发明的各向异性导电膜具有良好的预压缩性质，且在主要压缩后甚至在高温高湿条件下也展现良好的连接可靠性，所以可确认，当应用到半导体装置时，甚至在高温高湿条件下也可长期使用根据本发明的各向异性导电膜。
虽然上文已描述本发明的一些实施例和特征，但应理解，给出这些实施例和特征仅是为了进行说明且决不应理解为限制本发明。因此，本发明的范围和精神应仅由所附权利要求书及其等效物来限定。

Claims (19)

1.一种各向异性导电膜，
其中所述各向异性导电膜的应力-应变曲线具有如以下方程式1表示的大于0和小于或等于0.2千克力/(平方毫米·％)的斜率A，以及0.4千克力/平方毫米或0.4千克力/平方毫米以上的最大应力，
斜率A＝(1/2Smax-S0)/x---(1)，
其中所述斜率A的单位为千克力/(平方毫米·％)，Smax：所述最大应力，x：所述最大应力的一半下的应变，其中所述x的单位为％，S0：0应变下的应力。
2.根据权利要求1所述的各向异性导电膜，其中所述各向异性导电膜在其样本断裂时具有10％或10％以上的应变。
3.根据权利要求1所述的各向异性导电膜，其中所述各向异性导电膜包括第一绝缘层、导电层和第二绝缘层。
4.根据权利要求3所述的各向异性导电膜，其中所述第一绝缘层堆叠在所述导电层的一个表面上，且所述第二绝缘层堆叠在所述导电层的另一表面上。
5.根据权利要求3所述的各向异性导电膜，其中所述第一绝缘层具有2微米或2微米以下的厚度。
6.根据权利要求3所述的各向异性导电膜，其中所述导电层具有2微米到10微米的厚度，且所述第二绝缘层具有6微米到18微米的厚度。
7.根据权利要求1所述的各向异性导电膜，其中通过ARES流变仪所测量，所述各向异性导电膜在50℃到60℃下具有20,000帕斯卡·秒到100,000帕斯卡·秒的熔融粘度。
8.根据权利要求3所述的各向异性导电膜，其中通过ARES流变仪所测量，所述第二绝缘层在50℃到60℃下具有10,000帕斯卡·秒到70,000帕斯卡·秒的熔融粘度。
9.根据权利要求3所述的各向异性导电膜，其中所述第二绝缘层包括粘合剂树脂、环氧树脂、无机颗粒、固化剂和偶联剂。
10.根据权利要求9所述的各向异性导电膜，其中关于固体含量，以所述第二绝缘层的总重量计，所述第二绝缘层包括：10重量％到50重量％的所述粘合剂树脂；10重量％到60重量％的所述环氧树脂；5重量％到40重量％的所述无机颗粒；0.5重量％到10重量％的所述固化剂；以及0.1重量％到10重量％的所述偶联剂。
11.根据权利要求10所述的各向异性导电膜，其中所述粘合剂树脂包括第一粘合剂树脂和第二粘合剂树脂，所述第一粘合剂树脂具有90℃或90℃以上的玻璃化转变温度，所述第二粘合剂树脂具有60℃到小于90℃的玻璃化转变温度。
12.根据权利要求11所述的各向异性导电膜，其中所存在的所述第一粘合剂树脂的量大于所述第二粘合剂树脂的量，且所述第一粘合剂树脂与所述第二粘合剂树脂的重量比的范围为1∶0.2到1∶1。
13.根据权利要求11所述的各向异性导电膜，其中所存在的所述第一粘合剂树脂的量小于所述第二粘合剂树脂的量，且所述第一粘合剂树脂与所述第二粘合剂树脂的重量比的范围为1∶4到1∶10。
14.根据权利要求11所述的各向异性导电膜，其中关于固体含量，以所述第二绝缘层的总重量计，在所述第二绝缘层中，所述环氧树脂的含量大于所述粘合剂树脂的含量，且所述环氧树脂与所述粘合剂树脂的重量比高于1∶1且小于或等于2∶1。
15.根据权利要求1所述的各向异性导电膜，其中所述各向异性导电膜具有0.5欧姆或0.5欧姆以下的连接电阻，这是在1兆帕到3兆帕的负荷下在50℃到70℃下，对置于玻璃衬底与集成电路驱动器芯片或集成电路芯片之间的所述各向异性导电膜进行预压缩持续1到3秒，和在60兆帕到80兆帕的负荷下在140℃到160℃下进行压缩持续3到7秒后，立即在25℃下测量的。
16.根据权利要求15所述的各向异性导电膜，其中所述各向异性导电膜具有5欧姆或5欧姆以下的可靠性测试后连接电阻，这是在所述各向异性导电膜进行所述预压缩和所述压缩且保持在85℃和85％相对湿度下持续500小时之后测量的。
17.一种半导体装置，包括：
第一连接构件，包含第一电极；
第二连接构件，包含第二电极；以及
根据权利要求1到16中任一项所述的各向异性导电膜，所述各向异性导电膜置于所述第一连接构件与所述第二连接构件之间且将所述第一电极连接到所述第二电极。
18.根据权利要求17所述的半导体装置，其中所述第一连接构件为玻璃衬底，且所述第二连接构件为集成电路驱动器芯片或集成电路芯片，且所述各向异性导电膜具有0.5欧姆或0.5欧姆以下的连接电阻，这是在1兆帕到3兆帕的负荷下在50℃到70℃下，对置于所述玻璃衬底与所述集成电路驱动器芯片或所述集成电路芯片之间的所述各向异性导电膜进行预压缩持续1到3秒，和在60兆帕到80兆帕的负荷下在140℃到160℃下进行压缩持续3到7秒后，立即在25℃下测量的。
19.根据权利要求18所述的半导体装置，其中所述各向异性导电膜具有5欧姆或5欧姆以下的可靠性测试后连接电阻，这是在所述各向异性导电膜进行所述预压缩和所述压缩且保持在85℃和85％相对湿度下持续500小时之后测量的。
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