CN104591271B - 一种制备二氧化钛微孔薄膜的方法 - Google Patents
一种制备二氧化钛微孔薄膜的方法 Download PDFInfo
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CN109206339B (zh) * | 2017-06-29 | 2021-04-27 | 湘潭大学 | 一种环己胺氧化制备环己酮肟的方法 |
CN107935036B (zh) * | 2017-11-30 | 2020-02-07 | 重庆文理学院 | 一种致密二氧化钛薄膜的室温成膜制备方法 |
CN109524497B (zh) * | 2018-11-07 | 2020-10-27 | 西安交通大学 | 一种透明超快响应自供能紫外探测器及其制备方法 |
CN110918079B (zh) * | 2019-12-19 | 2022-09-02 | 延安大学 | 一种纳米粉体二氧化钛薄膜耐酸材料及其制备方法 |
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CN100539199C (zh) * | 2006-12-22 | 2009-09-09 | 比亚迪股份有限公司 | 一种二氧化钛双元纳晶多孔薄膜及其制备方法 |
CN101585552B (zh) * | 2009-06-26 | 2011-08-10 | 上海大学 | 由TiO2纳米晶水溶胶制备TiO2多孔薄膜的方法 |
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CN103833074B (zh) * | 2014-03-19 | 2015-08-19 | 吉林大学 | 一种制备二氧化钛纳米粒子的方法 |
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Effective date of registration: 20181229 Address after: Room 511, 5th floor, Area A, 2499 Weishan Road, Changchun High-tech Zone, Jilin Province, 130012 Patentee after: Jilin University Science Park Development Center Address before: 130012 No. 2699 Qianjin Street, Jilin, Changchun Patentee before: Jilin University |
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Effective date of registration: 20190926 Address after: 130012 Jilin province Changchun high tech District No. 3333 North Street North Grand Changchun science and technology park a first floor of building C2-1 Patentee after: Jilin Jida Incubator Co. Ltd. Address before: 130012, room 5, building 2499, A District, 511 Wei Shan Road, Changchun hi tech Zone, Jilin, China Patentee before: Jilin University Science Park Development Center |
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Effective date of registration: 20191118 Address after: Room 005, room 801, floor 8, building b1-1, industrial phase I, Beihu science and Technology Park, No. 3333, Shengbei street, Beihu science and Technology Development Zone, Changchun City, Jilin Province Patentee after: Jilin runzhen Separation Technology Co., Ltd Address before: 130012 Jilin province Changchun high tech District No. 3333 North Street North Grand Changchun science and technology park a first floor of building C2-1 Patentee before: Jilin Jida Incubator Co. Ltd. |
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