CN104584232B - 纹理形成用蚀刻液及使用其的纹理形成方法 - Google Patents

纹理形成用蚀刻液及使用其的纹理形成方法 Download PDF

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Publication number
CN104584232B
CN104584232B CN201380042594.6A CN201380042594A CN104584232B CN 104584232 B CN104584232 B CN 104584232B CN 201380042594 A CN201380042594 A CN 201380042594A CN 104584232 B CN104584232 B CN 104584232B
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China
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mass
salt
compound
etching solution
acid
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Chinese (zh)
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CN104584232A (zh
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中川和典
气贺泽繁
桥本贺之
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DKS Co Ltd
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Dai Ichi Kogyo Seiyaku Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0236Special surface textures
    • H01L31/02363Special surface textures of the semiconductor body itself, e.g. textured active layers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Photovoltaic Devices (AREA)
  • ing And Chemical Polishing (AREA)
CN201380042594.6A 2012-08-10 2013-07-29 纹理形成用蚀刻液及使用其的纹理形成方法 Active CN104584232B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2012178129 2012-08-10
JP2012178128 2012-08-10
JP2012-178129 2012-08-10
JP2012-178128 2012-08-10
JP2013-073434 2013-03-29
JP2013073434 2013-03-29
PCT/JP2013/004586 WO2014024414A1 (ja) 2012-08-10 2013-07-29 テクスチャー形成用エッチング液およびそれを用いたテクスチャー形成方法

Publications (2)

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CN104584232A CN104584232A (zh) 2015-04-29
CN104584232B true CN104584232B (zh) 2017-03-08

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CN201380042594.6A Active CN104584232B (zh) 2012-08-10 2013-07-29 纹理形成用蚀刻液及使用其的纹理形成方法

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JP (2) JP6138794B2 (ja)
CN (1) CN104584232B (ja)
MY (1) MY168909A (ja)
PH (1) PH12015500079A1 (ja)
SG (1) SG11201500281YA (ja)
TW (1) TWI554592B (ja)
WO (1) WO2014024414A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102122049B1 (ko) * 2013-07-19 2020-06-11 동우 화인켐 주식회사 결정성 실리콘 웨이퍼의 텍스쳐 에칭액 조성물 및 텍스쳐 에칭방법
JP6282507B2 (ja) * 2014-03-27 2018-02-21 第一工業製薬株式会社 テクスチャー形成用エッチング液およびそれを用いたテクスチャー形成方法
JP6859111B2 (ja) * 2017-01-19 2021-04-14 信越化学工業株式会社 高光電変換効率太陽電池の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101454879A (zh) * 2006-05-26 2009-06-10 和光纯药工业株式会社 基板蚀刻液
CN102017176A (zh) * 2008-03-25 2011-04-13 应用材料股份有限公司 结晶太阳能电池的表面清洁与纹理化工艺
CN102169818A (zh) * 2009-12-17 2011-08-31 罗门哈斯电子材料有限公司 纹理化半导体衬底的改进方法
JP2012004528A (ja) * 2010-05-18 2012-01-05 Shinryo Corp エッチング液およびシリコン基板の表面加工方法
CN102484060A (zh) * 2009-08-20 2012-05-30 瑞纳有限责任公司 用于硅表面蚀刻的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3772456B2 (ja) * 1997-04-23 2006-05-10 三菱電機株式会社 太陽電池及びその製造方法、半導体製造装置
DE10241300A1 (de) * 2002-09-04 2004-03-18 Merck Patent Gmbh Ätzpasten für Siliziumoberflächen und -schichten
MY160091A (en) * 2010-06-09 2017-02-28 Basf Se Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates
US20120295447A1 (en) * 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101454879A (zh) * 2006-05-26 2009-06-10 和光纯药工业株式会社 基板蚀刻液
CN102017176A (zh) * 2008-03-25 2011-04-13 应用材料股份有限公司 结晶太阳能电池的表面清洁与纹理化工艺
CN102484060A (zh) * 2009-08-20 2012-05-30 瑞纳有限责任公司 用于硅表面蚀刻的方法
CN102169818A (zh) * 2009-12-17 2011-08-31 罗门哈斯电子材料有限公司 纹理化半导体衬底的改进方法
JP2012004528A (ja) * 2010-05-18 2012-01-05 Shinryo Corp エッチング液およびシリコン基板の表面加工方法

Also Published As

Publication number Publication date
PH12015500079B1 (en) 2015-03-02
TWI554592B (zh) 2016-10-21
SG11201500281YA (en) 2015-03-30
PH12015500079A1 (en) 2015-03-02
JP6129455B1 (ja) 2017-05-17
JP2017118143A (ja) 2017-06-29
WO2014024414A1 (ja) 2014-02-13
JPWO2014024414A1 (ja) 2016-07-25
TW201412947A (zh) 2014-04-01
CN104584232A (zh) 2015-04-29
MY168909A (en) 2018-12-04
JP6138794B2 (ja) 2017-05-31

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