MY168909A - Etching fluid for forming texture and texture-forming method using same - Google Patents
Etching fluid for forming texture and texture-forming method using sameInfo
- Publication number
- MY168909A MY168909A MYPI2014704078A MYPI2014704078A MY168909A MY 168909 A MY168909 A MY 168909A MY PI2014704078 A MYPI2014704078 A MY PI2014704078A MY PI2014704078 A MYPI2014704078 A MY PI2014704078A MY 168909 A MY168909 A MY 168909A
- Authority
- MY
- Malaysia
- Prior art keywords
- texture
- forming
- group
- etching fluid
- silicon substrate
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 4
- 239000012530 fluid Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 239000006061 abrasive grain Substances 0.000 abstract 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract 2
- 150000003839 salts Chemical class 0.000 abstract 2
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 abstract 2
- AFINAILKDBCXMX-PBHICJAKSA-N (2s,3r)-2-amino-3-hydroxy-n-(4-octylphenyl)butanamide Chemical compound CCCCCCCCC1=CC=C(NC(=O)[C@@H](N)[C@@H](C)O)C=C1 AFINAILKDBCXMX-PBHICJAKSA-N 0.000 abstract 1
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
Abstract
There are provided a silicon substrate etching fluid and an etching method for forming texture with which a desirable texture can be uniformly and stably formed on a substrate surface without causing the additive components to vaporize in the common working temperature range of 60?C to 95?C, and that is applicable to both a silicon substrate produced by using the loose-abrasive grain method, and a silicon substrate produced by using the fixed-abrasive grain method. The etching fluid includes (A) an alkali component; (B) a phosphoric acid derivative or a salt thereof; and (C) a compound that contains at least one selected from the group consisting of a carboxy group, a sulfo group, a carboxy or sulfo group forming a salt, and a carboxymethyl group.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012178128 | 2012-08-10 | ||
| JP2012178129 | 2012-08-10 | ||
| JP2013073434 | 2013-03-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY168909A true MY168909A (en) | 2018-12-04 |
Family
ID=50067674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2014704078A MY168909A (en) | 2012-08-10 | 2013-07-29 | Etching fluid for forming texture and texture-forming method using same |
Country Status (7)
| Country | Link |
|---|---|
| JP (2) | JP6138794B2 (en) |
| CN (1) | CN104584232B (en) |
| MY (1) | MY168909A (en) |
| PH (1) | PH12015500079B1 (en) |
| SG (1) | SG11201500281YA (en) |
| TW (1) | TWI554592B (en) |
| WO (1) | WO2014024414A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102122049B1 (en) * | 2013-07-19 | 2020-06-11 | 동우 화인켐 주식회사 | Texture etching solution composition and texture etching method of crystalline silicon wafers |
| JP6282507B2 (en) * | 2014-03-27 | 2018-02-21 | 第一工業製薬株式会社 | Texture forming etching solution and texture forming method using the same |
| JP6859111B2 (en) * | 2017-01-19 | 2021-04-14 | 信越化学工業株式会社 | Manufacturing method of high photoelectric conversion efficiency solar cell |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3772456B2 (en) * | 1997-04-23 | 2006-05-10 | 三菱電機株式会社 | Solar cell, method for manufacturing the same, and semiconductor manufacturing apparatus |
| DE10241300A1 (en) * | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Etching for silicon surfaces and layers, used in photovoltaic, semiconductor and high power electronics technology, for producing photodiode, circuit, electronic device or solar cell, is thickened alkaline liquid |
| TW200745313A (en) * | 2006-05-26 | 2007-12-16 | Wako Pure Chem Ind Ltd | Substrate etching liquid |
| TW201001508A (en) * | 2008-03-25 | 2010-01-01 | Applied Materials Inc | Surface cleaning and texturing process for crystalline solar cells |
| DE102009028762A1 (en) * | 2009-08-20 | 2011-03-03 | Rena Gmbh | Process for etching silicon surfaces |
| CN102169818B (en) * | 2009-12-17 | 2013-12-11 | 罗门哈斯电子材料有限公司 | Improved method of texturing semiconductor substrates |
| JP5479301B2 (en) * | 2010-05-18 | 2014-04-23 | 株式会社新菱 | Etching solution and silicon substrate surface processing method |
| MY160091A (en) * | 2010-06-09 | 2017-02-28 | Basf Se | Aqueous alkaline etching and cleaning composition and method for treating the surface of silicon substrates |
| US20120295447A1 (en) * | 2010-11-24 | 2012-11-22 | Air Products And Chemicals, Inc. | Compositions and Methods for Texturing of Silicon Wafers |
-
2013
- 2013-07-29 SG SG11201500281YA patent/SG11201500281YA/en unknown
- 2013-07-29 MY MYPI2014704078A patent/MY168909A/en unknown
- 2013-07-29 WO PCT/JP2013/004586 patent/WO2014024414A1/en active Application Filing
- 2013-07-29 CN CN201380042594.6A patent/CN104584232B/en active Active
- 2013-07-29 JP JP2014529271A patent/JP6138794B2/en active Active
- 2013-08-06 TW TW102128087A patent/TWI554592B/en not_active IP Right Cessation
-
2015
- 2015-01-13 PH PH12015500079A patent/PH12015500079B1/en unknown
-
2017
- 2017-03-15 JP JP2017049968A patent/JP6129455B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| PH12015500079A1 (en) | 2015-03-02 |
| SG11201500281YA (en) | 2015-03-30 |
| TW201412947A (en) | 2014-04-01 |
| JP6138794B2 (en) | 2017-05-31 |
| JPWO2014024414A1 (en) | 2016-07-25 |
| CN104584232A (en) | 2015-04-29 |
| WO2014024414A1 (en) | 2014-02-13 |
| JP6129455B1 (en) | 2017-05-17 |
| TWI554592B (en) | 2016-10-21 |
| CN104584232B (en) | 2017-03-08 |
| PH12015500079B1 (en) | 2015-03-02 |
| JP2017118143A (en) | 2017-06-29 |
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