CN104584134A - 使用具有不同氧化镁(MgO)厚度的多个磁性隧道结的多级存储器单元 - Google Patents

使用具有不同氧化镁(MgO)厚度的多个磁性隧道结的多级存储器单元 Download PDF

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Publication number
CN104584134A
CN104584134A CN201380043908.4A CN201380043908A CN104584134A CN 104584134 A CN104584134 A CN 104584134A CN 201380043908 A CN201380043908 A CN 201380043908A CN 104584134 A CN104584134 A CN 104584134A
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China
Prior art keywords
mtj
mtj element
barrier layer
layer
logic
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Pending
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CN201380043908.4A
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English (en)
Chinese (zh)
Inventor
K·李
T·金
J·P·金
S·H·康
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
CN201380043908.4A 2012-08-20 2013-08-15 使用具有不同氧化镁(MgO)厚度的多个磁性隧道结的多级存储器单元 Pending CN104584134A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/589,315 US9047964B2 (en) 2012-08-20 2012-08-20 Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thickness
US13/589,315 2012-08-20
PCT/US2013/055171 WO2014031442A1 (en) 2012-08-20 2013-08-15 Multi-level memory cell using multiple magentic tunnel junctions with varying mgo thickness

Publications (1)

Publication Number Publication Date
CN104584134A true CN104584134A (zh) 2015-04-29

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CN201380043908.4A Pending CN104584134A (zh) 2012-08-20 2013-08-15 使用具有不同氧化镁(MgO)厚度的多个磁性隧道结的多级存储器单元

Country Status (5)

Country Link
US (1) US9047964B2 (enExample)
EP (1) EP2885787A1 (enExample)
CN (1) CN104584134A (enExample)
IN (1) IN2015MN00065A (enExample)
WO (1) WO2014031442A1 (enExample)

Cited By (5)

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CN107342104A (zh) * 2016-04-29 2017-11-10 上海磁宇信息科技有限公司 一种非对称磁性随机存储器及其磁性记忆单元读取方法
CN107481755A (zh) * 2016-06-13 2017-12-15 中电海康集团有限公司 一种多态磁性存储器的位元结构
CN108987427A (zh) * 2017-05-26 2018-12-11 三星电子株式会社 制造mram器件的方法及制造半导体芯片的方法
CN110277490A (zh) * 2019-06-24 2019-09-24 中国科学院微电子研究所 Stt-mram参考单元及其制备方法及包含该参考单元的芯片
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KR20170064018A (ko) * 2015-11-30 2017-06-09 에스케이하이닉스 주식회사 전자 장치
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US10541268B2 (en) 2017-12-28 2020-01-21 Spin Memory, Inc. Three-dimensional magnetic memory devices
US10347308B1 (en) 2017-12-29 2019-07-09 Spin Memory, Inc. Systems and methods utilizing parallel configurations of magnetic memory devices
US10403343B2 (en) * 2017-12-29 2019-09-03 Spin Memory, Inc. Systems and methods utilizing serial configurations of magnetic memory devices
US10803916B2 (en) 2017-12-29 2020-10-13 Spin Memory, Inc. Methods and systems for writing to magnetic memory devices utilizing alternating current
US10424357B2 (en) 2017-12-29 2019-09-24 Spin Memory, Inc. Magnetic tunnel junction (MTJ) memory device having a composite free magnetic layer
US10192788B1 (en) 2018-01-08 2019-01-29 Spin Transfer Technologies Methods of fabricating dual threshold voltage devices with stacked gates
US10192789B1 (en) 2018-01-08 2019-01-29 Spin Transfer Technologies Methods of fabricating dual threshold voltage devices
US10319424B1 (en) 2018-01-08 2019-06-11 Spin Memory, Inc. Adjustable current selectors
US10192787B1 (en) 2018-01-08 2019-01-29 Spin Transfer Technologies Methods of fabricating contacts for cylindrical devices
US10381550B1 (en) 2018-03-01 2019-08-13 Samsung Electronics Co., Ltd. Method and system for engineering the secondary barrier layer in dual magnetic junctions
US11488647B2 (en) 2018-06-28 2022-11-01 Everspin Technologies, Inc. Stacked magnetoresistive structures and methods therefor
US10878870B2 (en) 2018-09-28 2020-12-29 Spin Memory, Inc. Defect propagation structure and mechanism for magnetic memory
US10692556B2 (en) 2018-09-28 2020-06-23 Spin Memory, Inc. Defect injection structure and mechanism for magnetic memory
EP3664094B1 (en) * 2018-12-06 2022-08-24 IMEC vzw A magnetic tunnel junction unit and a memory device
US11250896B2 (en) * 2019-06-23 2022-02-15 Purdue Research Foundation Valley spin hall effect based non-volatile memory
GB2588151B (en) * 2019-10-09 2022-05-04 Huo Suguo Hybrid perpendicular and in-plane STT-MRAM
US11335850B2 (en) 2020-03-12 2022-05-17 International Business Machines Corporation Magnetoresistive random-access memory device including magnetic tunnel junctions
US11552243B2 (en) * 2020-04-24 2023-01-10 International Business Machines Corporation MRAM structure with ternary weight storage
WO2022032562A1 (zh) * 2020-08-13 2022-02-17 华为技术有限公司 一种存储单元以及相关设备
KR102768596B1 (ko) 2020-11-03 2025-02-13 삼성전자주식회사 이미지 센서 및 이미지 센싱 장치
US11514962B2 (en) 2020-11-12 2022-11-29 International Business Machines Corporation Two-bit magnetoresistive random-access memory cell
US12207477B2 (en) 2021-03-18 2025-01-21 International Business Machines Corporation Same level MRAM stacks having different configurations
WO2025074730A1 (ja) * 2023-10-02 2025-04-10 ソニーセミコンダクタソリューションズ株式会社 不揮発性メモリ、および、演算装置

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CN101711408A (zh) * 2007-02-12 2010-05-19 亚达夫科技有限公司 改进的高容量低成本多态磁存储器
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Cited By (11)

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Publication number Priority date Publication date Assignee Title
CN107342104A (zh) * 2016-04-29 2017-11-10 上海磁宇信息科技有限公司 一种非对称磁性随机存储器及其磁性记忆单元读取方法
CN107342104B (zh) * 2016-04-29 2021-04-27 上海磁宇信息科技有限公司 一种非对称磁性随机存储器及其磁性记忆单元读取方法
CN107481755A (zh) * 2016-06-13 2017-12-15 中电海康集团有限公司 一种多态磁性存储器的位元结构
CN108987427A (zh) * 2017-05-26 2018-12-11 三星电子株式会社 制造mram器件的方法及制造半导体芯片的方法
CN108987427B (zh) * 2017-05-26 2023-04-25 三星电子株式会社 制造mram器件的方法及制造半导体芯片的方法
CN110277490A (zh) * 2019-06-24 2019-09-24 中国科学院微电子研究所 Stt-mram参考单元及其制备方法及包含该参考单元的芯片
CN110277490B (zh) * 2019-06-24 2023-06-09 中国科学院微电子研究所 Stt-mram参考单元及其制备方法及包含该参考单元的芯片
WO2021181172A1 (en) * 2020-03-13 2021-09-16 International Business Machines Corporation Inverted wide base double magnetic tunnel junction device
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WO2014031442A1 (en) 2014-02-27
IN2015MN00065A (enExample) 2015-10-16
US9047964B2 (en) 2015-06-02
EP2885787A1 (en) 2015-06-24
US20140050019A1 (en) 2014-02-20

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