CN104576404B - 一种制作半导体底板的方法及系统 - Google Patents

一种制作半导体底板的方法及系统 Download PDF

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Publication number
CN104576404B
CN104576404B CN201410452718.4A CN201410452718A CN104576404B CN 104576404 B CN104576404 B CN 104576404B CN 201410452718 A CN201410452718 A CN 201410452718A CN 104576404 B CN104576404 B CN 104576404B
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CN
China
Prior art keywords
substrate
semiconductor particles
semiconductor
support member
sealing material
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Expired - Fee Related
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CN201410452718.4A
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English (en)
Chinese (zh)
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CN104576404A (zh
Inventor
道格拉斯·迪卡尔
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Diftek Lasers Inc
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Diftek Lasers Inc
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Publication of CN104576404A publication Critical patent/CN104576404A/zh
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Publication of CN104576404B publication Critical patent/CN104576404B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Wire Bonding (AREA)
  • Laminated Bodies (AREA)
  • Recrystallisation Techniques (AREA)
CN201410452718.4A 2013-09-05 2014-09-05 一种制作半导体底板的方法及系统 Expired - Fee Related CN104576404B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/019,131 US9209019B2 (en) 2013-09-05 2013-09-05 Method and system for manufacturing a semi-conducting backplane
US14/019131 2013-09-05

Publications (2)

Publication Number Publication Date
CN104576404A CN104576404A (zh) 2015-04-29
CN104576404B true CN104576404B (zh) 2019-08-09

Family

ID=51492169

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410452718.4A Expired - Fee Related CN104576404B (zh) 2013-09-05 2014-09-05 一种制作半导体底板的方法及系统

Country Status (4)

Country Link
US (1) US9209019B2 (enExample)
EP (1) EP2846354B1 (enExample)
JP (1) JP6362480B2 (enExample)
CN (1) CN104576404B (enExample)

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US9859348B2 (en) 2011-10-14 2018-01-02 Diftek Lasers, Inc. Electronic device and method of making thereof
US10446629B2 (en) 2011-10-14 2019-10-15 Diftek Lasers, Inc. Electronic device and method of making thereof
US9601329B2 (en) * 2014-06-04 2017-03-21 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
US20160257117A1 (en) * 2013-10-28 2016-09-08 Hewlett-Packard Development Company, L.P. Encapsulating a Bonded Wire with Low Profile Encapsulation
US9818903B2 (en) 2014-04-30 2017-11-14 Sunpower Corporation Bonds for solar cell metallization
EP2953158A3 (en) * 2014-06-04 2016-02-17 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
US9843024B2 (en) * 2014-12-03 2017-12-12 Universal Display Corporation Methods for fabricating OLEDs
EP3244453A1 (en) * 2015-10-09 2017-11-15 Diftek Lasers, Inc. An electronic device and method of making thereof
US10312310B2 (en) 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof
US10199255B2 (en) * 2016-03-10 2019-02-05 Infineon Technologioes AG Method for providing a planarizable workpiece support, a workpiece planarization arrangement, and a chuck
CN109983564B (zh) * 2016-11-16 2023-05-02 东京毅力科创株式会社 亚分辨率衬底图案化的方法
DE102017213065B3 (de) * 2017-04-13 2018-07-05 Christian-Albrechts-Universität Zu Kiel Verfahren zur Herstellung von plankonvexen Linsenelementen und zur Herstellung eines gehäusten Bauelements auf Waferebene

Citations (1)

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Also Published As

Publication number Publication date
JP6362480B2 (ja) 2018-07-25
HK1207207A1 (en) 2016-01-22
EP2846354B1 (en) 2019-05-22
JP2015053481A (ja) 2015-03-19
US9209019B2 (en) 2015-12-08
CN104576404A (zh) 2015-04-29
EP2846354A2 (en) 2015-03-11
US20150064883A1 (en) 2015-03-05
EP2846354A3 (en) 2015-08-12

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