JP6362480B2 - 半導体バックプレーンを製造するための方法およびシステム - Google Patents
半導体バックプレーンを製造するための方法およびシステム Download PDFInfo
- Publication number
- JP6362480B2 JP6362480B2 JP2014173705A JP2014173705A JP6362480B2 JP 6362480 B2 JP6362480 B2 JP 6362480B2 JP 2014173705 A JP2014173705 A JP 2014173705A JP 2014173705 A JP2014173705 A JP 2014173705A JP 6362480 B2 JP6362480 B2 JP 6362480B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Wire Bonding (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/019,131 | 2013-09-05 | ||
| US14/019,131 US9209019B2 (en) | 2013-09-05 | 2013-09-05 | Method and system for manufacturing a semi-conducting backplane |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015053481A JP2015053481A (ja) | 2015-03-19 |
| JP2015053481A5 JP2015053481A5 (enExample) | 2017-08-03 |
| JP6362480B2 true JP6362480B2 (ja) | 2018-07-25 |
Family
ID=51492169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014173705A Active JP6362480B2 (ja) | 2013-09-05 | 2014-08-28 | 半導体バックプレーンを製造するための方法およびシステム |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9209019B2 (enExample) |
| EP (1) | EP2846354B1 (enExample) |
| JP (1) | JP6362480B2 (enExample) |
| CN (1) | CN104576404B (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9859348B2 (en) | 2011-10-14 | 2018-01-02 | Diftek Lasers, Inc. | Electronic device and method of making thereof |
| US10446629B2 (en) | 2011-10-14 | 2019-10-15 | Diftek Lasers, Inc. | Electronic device and method of making thereof |
| US9601329B2 (en) * | 2014-06-04 | 2017-03-21 | Diftek Lasers, Inc. | Method of fabricating crystalline island on substrate |
| US20160257117A1 (en) | 2013-10-28 | 2016-09-08 | Hewlett-Packard Development Company, L.P. | Encapsulating a Bonded Wire with Low Profile Encapsulation |
| US9818903B2 (en) | 2014-04-30 | 2017-11-14 | Sunpower Corporation | Bonds for solar cell metallization |
| EP2953158A3 (en) * | 2014-06-04 | 2016-02-17 | Diftek Lasers, Inc. | Method of fabricating crystalline island on substrate |
| US9843024B2 (en) * | 2014-12-03 | 2017-12-12 | Universal Display Corporation | Methods for fabricating OLEDs |
| EP3244453A1 (en) * | 2015-10-09 | 2017-11-15 | Diftek Lasers, Inc. | An electronic device and method of making thereof |
| US10312310B2 (en) | 2016-01-19 | 2019-06-04 | Diftek Lasers, Inc. | OLED display and method of fabrication thereof |
| US10199255B2 (en) * | 2016-03-10 | 2019-02-05 | Infineon Technologioes AG | Method for providing a planarizable workpiece support, a workpiece planarization arrangement, and a chuck |
| JP6805414B2 (ja) * | 2016-11-16 | 2020-12-23 | 東京エレクトロン株式会社 | サブ解像度基板パターニング方法 |
| DE102017213065B3 (de) * | 2017-04-13 | 2018-07-05 | Christian-Albrechts-Universität Zu Kiel | Verfahren zur Herstellung von plankonvexen Linsenelementen und zur Herstellung eines gehäusten Bauelements auf Waferebene |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US3025335A (en) | 1960-02-29 | 1962-03-13 | Hoffman Electronics Corp | Flexible solar energy converter panel |
| NL154876B (nl) | 1966-04-14 | 1977-10-17 | Philips Nv | Werkwijze voor het vervaardigen van elektrisch werkzame inrichtingen met monokorrellagen met actieve korrels in een isolerende vulstof, alsmede volgens deze werkwijze verkregen elektrisch werkzame inrichting. |
| US3998659A (en) | 1974-01-28 | 1976-12-21 | Texas Instruments Incorporated | Solar cell with semiconductor particles and method of fabrication |
| US4270263A (en) | 1977-02-14 | 1981-06-02 | Texas Instruments Incorporated | Glass support light energy converter |
| US4470874A (en) | 1983-12-15 | 1984-09-11 | International Business Machines Corporation | Planarization of multi-level interconnected metallization system |
| US4614835A (en) | 1983-12-15 | 1986-09-30 | Texas Instruments Incorporated | Photovoltaic solar arrays using silicon microparticles |
| US5069740A (en) | 1984-09-04 | 1991-12-03 | Texas Instruments Incorporated | Production of semiconductor grade silicon spheres from metallurgical grade silicon particles |
| US4637855A (en) | 1985-04-30 | 1987-01-20 | Texas Instruments Incorporated | Process for producing crystalline silicon spheres |
| US4872607A (en) | 1988-02-04 | 1989-10-10 | Texas Instruments Incorporated | Method of bonding semiconductor material to an aluminum foil |
| US5091319A (en) | 1989-07-31 | 1992-02-25 | Hotchkiss Gregory B | Method of affixing silicon spheres to a foil matrix |
| US5086003A (en) * | 1989-07-31 | 1992-02-04 | Texas Instruments Incorporated | Method for applying an organic insulator to a solar array |
| US5256562A (en) | 1990-12-31 | 1993-10-26 | Kopin Corporation | Method for manufacturing a semiconductor device using a circuit transfer film |
| US5469020A (en) | 1994-03-14 | 1995-11-21 | Massachusetts Institute Of Technology | Flexible large screen display having multiple light emitting elements sandwiched between crossed electrodes |
| KR100377825B1 (ko) | 1996-10-09 | 2003-07-16 | 나가다 죠스게 | 반도체디바이스 |
| US5955776A (en) | 1996-12-04 | 1999-09-21 | Ball Semiconductor, Inc. | Spherical shaped semiconductor integrated circuit |
| US6657225B1 (en) | 1998-03-25 | 2003-12-02 | Seiko Epson Corporation | Semiconductor component, active matrix substrate for a liquid crystal display, and methods of manufacturing such component and substrate |
| US6350388B1 (en) | 1999-08-19 | 2002-02-26 | Micron Technology, Inc. | Method for patterning high density field emitter tips |
| JP2001210843A (ja) | 1999-11-17 | 2001-08-03 | Fuji Mach Mfg Co Ltd | 光発電パネルおよびその製造方法 |
| JP3847514B2 (ja) * | 2000-02-14 | 2006-11-22 | 株式会社三井ハイテック | ボール・ダイオード基板の製造方法。 |
| TW505942B (en) | 2000-06-29 | 2002-10-11 | Matsushita Electric Industrial Co Ltd | Method and apparatus for forming pattern onto panel substrate |
| JP2002083876A (ja) | 2000-09-07 | 2002-03-22 | Sanyo Electric Co Ltd | 半導体集積回路装置の製造方法 |
| JP2002111021A (ja) * | 2000-09-26 | 2002-04-12 | Mitsui High Tec Inc | 太陽電池の製造方法 |
| US7205626B1 (en) | 2000-10-20 | 2007-04-17 | Josuke Nakata | Light-emitting or light-receiving with plurality of particle-shaped semiconductor devices having light-emitting or light-receiving properties |
| DE60039545D1 (de) | 2000-10-20 | 2008-08-28 | Josuke Nakata | Lichtemittierdende oder lichtempfindliche Halbleiteranordnung und ihre Herstellungsmethode |
| US20040016456A1 (en) | 2002-07-25 | 2004-01-29 | Clean Venture 21 Corporation | Photovoltaic device and method for producing the same |
| KR100499129B1 (ko) | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | 발광 다이오드 및 그 제조방법 |
| JP2007504615A (ja) | 2003-09-05 | 2007-03-01 | キタイ,エイドリアン | 球支持薄膜蛍光体エレクトロルミネセンス素子 |
| TW200637037A (en) | 2005-02-18 | 2006-10-16 | Sumitomo Chemical Co | Semiconductor light-emitting element and fabrication method thereof |
| EP1693903B1 (en) * | 2005-02-18 | 2011-05-18 | Clean Venture 21 Corporation | Array of spherical solar cells and its method of fabrication |
| US20080121987A1 (en) | 2006-11-06 | 2008-05-29 | Yijian Chen | Nanodot and nanowire based MOSFET structures and fabrication processes |
| DE102006054206A1 (de) | 2006-11-15 | 2008-05-21 | Till Keesmann | Feldemissionsvorrichtung |
| KR100907787B1 (ko) | 2007-05-29 | 2009-07-15 | 재단법인서울대학교산학협력재단 | 패턴-천공된 마스크를 이용하는 하전입자의 집속 패터닝방법 및 이에 사용되는 마스크 |
| JP5157843B2 (ja) | 2007-12-04 | 2013-03-06 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
| KR101039630B1 (ko) | 2009-02-18 | 2011-06-08 | 성균관대학교산학협력단 | 기판 상에 나노구조체를 선택적으로 위치시키는 방법 및 이에 의해 형성된 나노구조체를 포함하는 나노-분자 소자 |
| US8575471B2 (en) | 2009-08-31 | 2013-11-05 | Alliance For Sustainable Energy, Llc | Lattice matched semiconductor growth on crystalline metallic substrates |
| JP2011181534A (ja) | 2010-02-26 | 2011-09-15 | Hitachi Ltd | 球状化合物半導体セル及びモジュールの製造方法 |
| US9224851B2 (en) | 2011-10-14 | 2015-12-29 | Diftek Lasers, Inc. | Planarized semiconductor particles positioned on a substrate |
| US8999742B1 (en) * | 2013-12-10 | 2015-04-07 | Nthdegree Technologies Worldwide Inc. | Silicon microsphere fabrication |
-
2013
- 2013-09-05 US US14/019,131 patent/US9209019B2/en active Active
-
2014
- 2014-08-27 EP EP14182511.7A patent/EP2846354B1/en active Active
- 2014-08-28 JP JP2014173705A patent/JP6362480B2/ja active Active
- 2014-09-05 CN CN201410452718.4A patent/CN104576404B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP2846354A3 (en) | 2015-08-12 |
| CN104576404B (zh) | 2019-08-09 |
| US20150064883A1 (en) | 2015-03-05 |
| US9209019B2 (en) | 2015-12-08 |
| EP2846354A2 (en) | 2015-03-11 |
| JP2015053481A (ja) | 2015-03-19 |
| CN104576404A (zh) | 2015-04-29 |
| EP2846354B1 (en) | 2019-05-22 |
| HK1207207A1 (en) | 2016-01-22 |
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