JP6362480B2 - 半導体バックプレーンを製造するための方法およびシステム - Google Patents

半導体バックプレーンを製造するための方法およびシステム Download PDF

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JP6362480B2
JP6362480B2 JP2014173705A JP2014173705A JP6362480B2 JP 6362480 B2 JP6362480 B2 JP 6362480B2 JP 2014173705 A JP2014173705 A JP 2014173705A JP 2014173705 A JP2014173705 A JP 2014173705A JP 6362480 B2 JP6362480 B2 JP 6362480B2
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substrate
semiconductor
layer
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semiconductor particles
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JP2015053481A (ja
JP2015053481A5 (enExample
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ダグラス ダイカー
ダグラス ダイカー
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ディフテック レーザーズ インコーポレイテッド
ディフテック レーザーズ インコーポレイテッド
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/11Manufacturing methods
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788Glasses, e.g. amorphous oxides, nitrides or fluorides

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Wire Bonding (AREA)
  • Laminated Bodies (AREA)
JP2014173705A 2013-09-05 2014-08-28 半導体バックプレーンを製造するための方法およびシステム Active JP6362480B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/019,131 2013-09-05
US14/019,131 US9209019B2 (en) 2013-09-05 2013-09-05 Method and system for manufacturing a semi-conducting backplane

Publications (3)

Publication Number Publication Date
JP2015053481A JP2015053481A (ja) 2015-03-19
JP2015053481A5 JP2015053481A5 (enExample) 2017-08-03
JP6362480B2 true JP6362480B2 (ja) 2018-07-25

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JP2014173705A Active JP6362480B2 (ja) 2013-09-05 2014-08-28 半導体バックプレーンを製造するための方法およびシステム

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Country Link
US (1) US9209019B2 (enExample)
EP (1) EP2846354B1 (enExample)
JP (1) JP6362480B2 (enExample)
CN (1) CN104576404B (enExample)

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US9601329B2 (en) * 2014-06-04 2017-03-21 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
US20160257117A1 (en) 2013-10-28 2016-09-08 Hewlett-Packard Development Company, L.P. Encapsulating a Bonded Wire with Low Profile Encapsulation
US9818903B2 (en) 2014-04-30 2017-11-14 Sunpower Corporation Bonds for solar cell metallization
EP2953158A3 (en) * 2014-06-04 2016-02-17 Diftek Lasers, Inc. Method of fabricating crystalline island on substrate
US9843024B2 (en) * 2014-12-03 2017-12-12 Universal Display Corporation Methods for fabricating OLEDs
EP3244453A1 (en) * 2015-10-09 2017-11-15 Diftek Lasers, Inc. An electronic device and method of making thereof
US10312310B2 (en) 2016-01-19 2019-06-04 Diftek Lasers, Inc. OLED display and method of fabrication thereof
US10199255B2 (en) * 2016-03-10 2019-02-05 Infineon Technologioes AG Method for providing a planarizable workpiece support, a workpiece planarization arrangement, and a chuck
JP6805414B2 (ja) * 2016-11-16 2020-12-23 東京エレクトロン株式会社 サブ解像度基板パターニング方法
DE102017213065B3 (de) * 2017-04-13 2018-07-05 Christian-Albrechts-Universität Zu Kiel Verfahren zur Herstellung von plankonvexen Linsenelementen und zur Herstellung eines gehäusten Bauelements auf Waferebene

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Also Published As

Publication number Publication date
EP2846354A3 (en) 2015-08-12
CN104576404B (zh) 2019-08-09
US20150064883A1 (en) 2015-03-05
US9209019B2 (en) 2015-12-08
EP2846354A2 (en) 2015-03-11
JP2015053481A (ja) 2015-03-19
CN104576404A (zh) 2015-04-29
EP2846354B1 (en) 2019-05-22
HK1207207A1 (en) 2016-01-22

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