CN104576360A - 功率二极管的制备方法 - Google Patents
功率二极管的制备方法 Download PDFInfo
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- CN104576360A CN104576360A CN201310503985.5A CN201310503985A CN104576360A CN 104576360 A CN104576360 A CN 104576360A CN 201310503985 A CN201310503985 A CN 201310503985A CN 104576360 A CN104576360 A CN 104576360A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 35
- 230000000873 masking effect Effects 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 29
- 238000001259 photo etching Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000001465 metallisation Methods 0.000 claims abstract description 12
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 238000000206 photolithography Methods 0.000 claims description 33
- 229920005591 polysilicon Polymers 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000002513 implantation Methods 0.000 claims description 19
- 238000005468 ion implantation Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 abstract description 3
- 210000000746 body region Anatomy 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000011084 recovery Methods 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000003550 marker Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310503985.5A CN104576360B (zh) | 2013-10-23 | 2013-10-23 | 功率二极管的制备方法 |
Applications Claiming Priority (1)
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CN201310503985.5A CN104576360B (zh) | 2013-10-23 | 2013-10-23 | 功率二极管的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN104576360A true CN104576360A (zh) | 2015-04-29 |
CN104576360B CN104576360B (zh) | 2017-08-08 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201310503985.5A Active CN104576360B (zh) | 2013-10-23 | 2013-10-23 | 功率二极管的制备方法 |
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CN (1) | CN104576360B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4625388A (en) * | 1982-04-26 | 1986-12-02 | Acrian, Inc. | Method of fabricating mesa MOSFET using overhang mask and resulting structure |
US5744994A (en) * | 1996-05-15 | 1998-04-28 | Siliconix Incorporated | Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp |
US20090085111A1 (en) * | 2007-09-27 | 2009-04-02 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
CN102237293A (zh) * | 2010-04-23 | 2011-11-09 | 无锡华润上华半导体有限公司 | 半导体器件及其制造方法 |
CN102931090A (zh) * | 2012-08-17 | 2013-02-13 | 西安龙腾新能源科技发展有限公司 | 一种超结mosfet的制造方法 |
CN103262251A (zh) * | 2010-12-09 | 2013-08-21 | 罗伯特·博世有限公司 | 用于机动车的供电的发电机装置 |
-
2013
- 2013-10-23 CN CN201310503985.5A patent/CN104576360B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4625388A (en) * | 1982-04-26 | 1986-12-02 | Acrian, Inc. | Method of fabricating mesa MOSFET using overhang mask and resulting structure |
US5744994A (en) * | 1996-05-15 | 1998-04-28 | Siliconix Incorporated | Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp |
US20090085111A1 (en) * | 2007-09-27 | 2009-04-02 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
CN102237293A (zh) * | 2010-04-23 | 2011-11-09 | 无锡华润上华半导体有限公司 | 半导体器件及其制造方法 |
CN103262251A (zh) * | 2010-12-09 | 2013-08-21 | 罗伯特·博世有限公司 | 用于机动车的供电的发电机装置 |
CN102931090A (zh) * | 2012-08-17 | 2013-02-13 | 西安龙腾新能源科技发展有限公司 | 一种超结mosfet的制造方法 |
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CN104576360B (zh) | 2017-08-08 |
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CB03 | Change of inventor or designer information |
Inventor after: Deng Xiaoshe Inventor after: Zhong Shengrong Inventor after: Wang Genyi Inventor after: Zhou Dongfei Inventor after: Zhang Dacheng Inventor before: Zhong Shengrong Inventor before: Wang Genyi Inventor before: Deng Xiaoshe Inventor before: Zhou Dongfei |
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CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20170926 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |
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TR01 | Transfer of patent right |