CN104516214B - 检测装置、光刻装置以及物品的制造方法 - Google Patents

检测装置、光刻装置以及物品的制造方法 Download PDF

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Publication number
CN104516214B
CN104516214B CN201410506206.1A CN201410506206A CN104516214B CN 104516214 B CN104516214 B CN 104516214B CN 201410506206 A CN201410506206 A CN 201410506206A CN 104516214 B CN104516214 B CN 104516214B
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China
Prior art keywords
light
substrate
mark
scope
detection device
Prior art date
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CN201410506206.1A
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English (en)
Chinese (zh)
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CN104516214A (zh
Inventor
赤松昭郎
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Canon Inc
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Canon Inc
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201410506206.1A 2013-10-08 2014-09-28 检测装置、光刻装置以及物品的制造方法 Active CN104516214B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013211430A JP6228420B2 (ja) 2013-10-08 2013-10-08 検出装置、リソグラフィ装置、および物品の製造方法
JP2013-211430 2013-10-08

Publications (2)

Publication Number Publication Date
CN104516214A CN104516214A (zh) 2015-04-15
CN104516214B true CN104516214B (zh) 2017-04-26

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ID=52791741

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CN201410506206.1A Active CN104516214B (zh) 2013-10-08 2014-09-28 检测装置、光刻装置以及物品的制造方法

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JP (1) JP6228420B2 (enExample)
KR (2) KR101783514B1 (enExample)
CN (1) CN104516214B (enExample)
TW (1) TWI557517B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6926596B2 (ja) * 2017-03-31 2021-08-25 ウシオ電機株式会社 露光装置および露光方法
US20220100109A1 (en) * 2018-12-20 2022-03-31 Asml Holding N.V. Apparatus for and method of simultaneously acquiring parallel alignment marks

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723845A (en) * 1985-09-30 1988-02-09 Nippon Kogaku K. K. Optical apparatus for the detection of position
US5508527A (en) * 1992-01-31 1996-04-16 Canon Kabushiki Kaisha Method of detecting positional displacement between mask and wafer, and exposure apparatus adopting the method
CN1766740A (zh) * 2004-10-28 2006-05-03 Asml荷兰有限公司 光学位置确定设备及方法
TW200732861A (en) * 2006-02-16 2007-09-01 Nikon Corp Exposure apparatus, exposing method, and device manufacturing method
CN101410945A (zh) * 2006-08-31 2009-04-15 株式会社尼康 移动体驱动方法和移动体驱动系统、图案形成方法和装置、曝光方法和装置、以及器件制造方法
CN101526750A (zh) * 2009-01-13 2009-09-09 上海微电子装备有限公司 用于光刻设备的对准系统及应用其的光刻设备
CN101950132A (zh) * 2010-08-17 2011-01-19 中国科学院光电技术研究所 纳米光刻掩模硅片间隙测量及调平装置
CN102141738A (zh) * 2011-04-02 2011-08-03 中国科学院光电技术研究所 一种用于投影光刻纳米量级自动调焦系统

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62262426A (ja) * 1986-05-09 1987-11-14 Canon Inc 露光装置
US5148214A (en) * 1986-05-09 1992-09-15 Canon Kabushiki Kaisha Alignment and exposure apparatus
KR100464854B1 (ko) * 2002-06-26 2005-01-06 삼성전자주식회사 반도체 기판의 정렬 방법 및 정렬 장치
KR101215094B1 (ko) * 2010-10-25 2012-12-24 삼성전자주식회사 피측정체 정렬장치
JP5713961B2 (ja) * 2011-06-21 2015-05-07 キヤノン株式会社 位置検出装置、インプリント装置及び位置検出方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4723845A (en) * 1985-09-30 1988-02-09 Nippon Kogaku K. K. Optical apparatus for the detection of position
US5508527A (en) * 1992-01-31 1996-04-16 Canon Kabushiki Kaisha Method of detecting positional displacement between mask and wafer, and exposure apparatus adopting the method
CN1766740A (zh) * 2004-10-28 2006-05-03 Asml荷兰有限公司 光学位置确定设备及方法
TW200732861A (en) * 2006-02-16 2007-09-01 Nikon Corp Exposure apparatus, exposing method, and device manufacturing method
CN101410945A (zh) * 2006-08-31 2009-04-15 株式会社尼康 移动体驱动方法和移动体驱动系统、图案形成方法和装置、曝光方法和装置、以及器件制造方法
CN101526750A (zh) * 2009-01-13 2009-09-09 上海微电子装备有限公司 用于光刻设备的对准系统及应用其的光刻设备
CN101950132A (zh) * 2010-08-17 2011-01-19 中国科学院光电技术研究所 纳米光刻掩模硅片间隙测量及调平装置
CN102141738A (zh) * 2011-04-02 2011-08-03 中国科学院光电技术研究所 一种用于投影光刻纳米量级自动调焦系统

Also Published As

Publication number Publication date
JP6228420B2 (ja) 2017-11-08
TW201514634A (zh) 2015-04-16
KR20150041579A (ko) 2015-04-16
KR101783514B1 (ko) 2017-09-29
KR20170016421A (ko) 2017-02-13
KR101828739B1 (ko) 2018-02-12
TWI557517B (zh) 2016-11-11
JP2015076491A (ja) 2015-04-20
CN104516214A (zh) 2015-04-15

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