CN104515773A - 用于利用结构光测量半导体器件元件的物理特性的系统和方法 - Google Patents

用于利用结构光测量半导体器件元件的物理特性的系统和方法 Download PDF

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Publication number
CN104515773A
CN104515773A CN201410616244.2A CN201410616244A CN104515773A CN 104515773 A CN104515773 A CN 104515773A CN 201410616244 A CN201410616244 A CN 201410616244A CN 104515773 A CN104515773 A CN 104515773A
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China
Prior art keywords
structured light
adhesive material
light patterns
physical characteristics
image
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CN201410616244.2A
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English (en)
Inventor
D·索德
Z·王
T·J·小科洛西莫
D·A·劳特
S-G·唐
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Kulicke and Soffa Investments Inc
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Kulicke and Soffa Investments Inc
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Priority to CN201911179790.3A priority Critical patent/CN110911294B/zh
Publication of CN104515773A publication Critical patent/CN104515773A/zh
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Abstract

本发明提供了利用结构光来确定半导体器件元件上的粘合剂材料的物理特性的方法。所述方法包括如下步骤：(1)将结构光图案应用于半导体器件元件上的粘合剂材料；(2)利于相机创建所述结构光图案的图像；以及(3)分析所述结构光图案的图像，以确定所述粘合剂材料的物理特性。还提供了用于利用结构光来确定半导体器件和元件的物理特性的其它方法和系统。

Description

用于利用结构光测量半导体器件元件的物理特性的系统和方法
相关申请的交叉引用
本申请要求2013年9月3日提交的美国临时申请No.61/873,288的优先权的权益，该美国临时申请的内容通过引用并入本文中。
技术领域
本发明涉及用于测量半导体器件元件的物理特性的系统和方法(通常与半导体元件的接合操作相关)，并且更具体地，涉及用于利用结构光测量这种物理特性的改进的系统和方法。
背景技术
半导体器件包括各种物理特征或特性，所述各种物理特征或特性最好是可控的。例如，通常可取的是半导体管芯在包装之前(例如，在管芯附着工艺、热压接合工艺等之前)基本上是平的。另外，典型的是对半导体器件或封装中所包括的元件的某些物理属性进行测量，以确保符合设计标准或规格。
具体而言，在热压接合(例如，利用两个器件之间的铜柱或类似的导电结构将一个半导体器件与另一个半导体器件接合)中，接合元件的物理特征或者特性最好是可控的。这在多个器件同时热压接合时尤其正确。
因此，可取的是提供用于测量和/或控制这种物理特性的改进的系统和方法。
发明内容
根据本发明的示例性实施例，提供了用于利用结构光来确定半导体器件元件上的粘合剂材料的物理特性的方法。所述方法包括以下步骤：(1)将结构光图案应用于半导体器件元件上的粘合剂材料；(2)利用相机创建结构光图案的图像；以及(3)分析结构光图案的图像，以确定粘合剂材料的物理特性。
根据本发明的另一个示例性实施例，提供了利用结构光来确定涂覆在半导体器件的元件之间的粘合剂材料的倒角的物理特性的方法。所述方法包括以下步骤：(1)将结构光图案应用于半导体器件的元件之间的粘合剂倒角；(2)利用相机创建结构光图案的图像；以及(3)分析结构光图案的图像，以确定粘合剂倒角的物理特性。
根据本发明的另一个示例性实施例，提供了利用结构光来确定半导体器件的平面度特性的方法。所述方法包括：(1)利用相机创建被半导体器件的表面反射的结构光图案的图像；以及(2)分析结构光图案的图像，以确定半导体器件的平面度特性。
根据本发明的某些示例性实施例，可以在热压接合机上实现这些和其它方法(包括本文中所列举的步骤中的部分或全部步骤)。
根据本发明的某些示例性实施例，本文中所述的方法(包括确定半导体器件元件上的粘合剂材料的物理特性的方法、确定涂覆在半导体器件的元件之间的粘合剂材料的倒角的物理特性的方法、以及确定半导体器件的平面度特性的方法)可以包括使用不同的结构光图案，以获得最佳的测量结果(例如，如本文中所述的物理特性或平面度特性)。例如，可以重复进行利用相机沉积结构光图案的图像和分析结构光图案的图像以确定特性的步骤(由此分析多个图像)，以确定所期望的测量结果。
根据本发明的另一个示例性实施例，提供了热压接合系统。热压接合系统包括：(1)支撑结构，其用于支撑包括粘合剂材料的半导体器件元件；(2)结构光源，其用于在粘合剂材料上提供结构光图案；以及(3)相机，其用于创建粘合剂材料上的结构光图案的图像。
根据本发明的另一个示例性实施例，提供了热压接合系统。热压接合系统包括：(1)支撑结构，其用于支撑半导体器件；(2)结构光源，其用于提供结构光图案；以及(3)相机，其用于利用半导体器件的反射表面间接观察结构光图案，该相机创建结构光图案的图像。
附图说明
通过结合附图阅读以下具体实施方式可以最好地理解本发明。需要强调的是，根据惯例，附图的各种特征不是按比例绘制的。反而，为了清楚起见，各种特征的尺寸被任意地放大或缩小。附图中包括下图：
图1是根据本发明的示例性实施例的热压接合机的元件的方块图视图；
图2A-2B是根据本发明的示例性实施例的投射到粘合剂材料上的结构光图案的顶视图；
图3是根据本发明的示例性实施例所产生的粘合剂材料的三维表示；
图4A是根据本发明的示例性实施例的要成像的粘合剂材料倒角的方块图的侧视图；
图4B是根据本发明的示例性实施例所产生的粘合剂材料倒角的三维表示；
图5是根据本发明的示例性实施例的可以与热压接合机结合使用的成像元件的方块图视图；
图6是根据本发明的示例性实施例的热压接合机的元件的方块图视图；
图7A-7C是根据本发明的示例性实施例的从半导体器件的表面反射的结构光图案的一系列图像；以及
图8是根据本发明的示例性实施例的热压接合机的元件的另一个方块图视图。
具体实施方式
本文中所使用的术语“结构光”旨在按照本领域技术人员所公知的那样进行限定，并且特别是指包括应用到要成像的表面的投影(例如，图案，例如在网格或水平条配置中具有不同灰度级的像素)的光。
根据本发明的某些示例性实施例，提供了用于利用结构光来测量半导体器件的元件(例如，轮廓、特性等)的系统和方法。被测量的半导体器件的示例性元件包括半导体器件的元件之间的粘合剂材料、半导体器件的元件之间的粘合剂材料的倒角、以及半导体器件表面。
例如，测量的粘合剂材料元件可以包括诸如环氧树脂、非导电膏等的固化液材料。这种粘合剂材料可以涂覆在热压接合时被接合在一起的元件之间。更具体地，具有导电区的半导体器件的第一元件可以设置在支撑结构上。然后可以将粘合剂材料涂覆于第一元件。然后，将第二元件(其可以是半导体管芯或包括导电柱等的其它器件)热压接合到第一元件。例如，该接合可以包括热和接合力。例如，可以测量粘合剂材料以确定材料的体积(例如材料的3D体积)、材料的分布(例如，材料的图案)等。
本发明的方面也可以用于测量这种第一和第二元件之间的粘合剂材料的倒角。倒角是两个元件之间暴露的粘合剂材料的部分(例如，见图4A)。例如，可以测量倒角，以确定倒角的高度(图4A中的附图标记410)、倒角的长度(图4A中的附图标记412)、体积(例如，倒角的3D体积)、以及其它量。
本发明的方面也可以用于测量半导体器件平面度特性。如本领域技术人员将意识到的，通常可取的是半导体器件(例如，要热压接合到另一个半导体元件的半导体管芯)基本上是平的和/或平面的。本发明可以用于确定这种器件是否在预定的平面度规范(例如，公差)内。
本发明的方面也可以用于测量半导体器件裂纹特性，包括这种裂缝的尺寸和位置。
本文中所使用的术语“半导体器件”旨在涉及任何类型的半导体器件，包括但不限于裸露的半导体管芯、封装的半导体管芯、部分封装的半导体管芯、将要接合管芯的衬底的区域、以及包括多个半导体管芯的半导体晶片(或其一部分)等。半导体器件的元件可以包括半导体管芯、用于支撑半导体管芯的衬底等。
图1示出了热压接合机100的元件。为清楚起见，图1(和本文中所示出的其它机器)中已省略了许多元件，例如接合头组件、材料处理系统等。机器100包括结构光源102(例如，示出为数字条纹投影机102，但不限于此)。光源102包括光栅104或其它结构(例如数字条纹投影机实施例中的DLP芯片)。从源102发射的光108是结构光，其包括例如利用光栅104施加在光上的结构光图案。图1还示出了支撑结构110，其支撑元件112。例如，元件112可以是涂覆了粘合剂材料(例如，环氧树脂材料、非导电膏等——作为固化液涂覆到半导体器件上)的半导体器件。粘合剂材料包括漫射表面114。当由漫射表面114接收结构光108时，得到的漫射光图案116的至少一部分在相机118的视场120内成像。由相机118产生的图像可以用于测量粘合剂材料(包括在元件112、114中)的物理特性，例如体积或体积分布。尽管元件112被描述为粘合剂材料，也可以考虑其它类型的元件，例如具有漫射表面(或至少部分漫射表面)的衬底。
图2A-2B示出了涂覆到各自的半导体器件的粘合剂材料样品的两个顶视图图像216a和216b。如图所示，粘合剂材料具有传统的“星”形或“爆裂”图案。在图2A中，粘合剂材料样品的中心部分260a不是很清楚。在图2B中，已经对图像进行了处理(例如，使用可以包含在热压接合机上的图像处理硬件和/或软件)，以提供如图2B中所示的较清楚的图像。在图2B中，中心部分260b比图2A中的更清晰，并且结构光图案(以及图案中的结构光线条的变化)更明显。利用这种图像，图像处理硬件和/或软件可以用于确定期望的物理特性，所述期望的物理特性可以是简单的特性(例如，诸如体积之类的数值)或者是诸如地形图或地形表示之类的较复杂的物理特性。图3示出了这种地图360的示例。
图1中所示出的示例性结构光成像方法不仅可以用于测量诸如图2A-2B中所示的粘合剂材料的物理特性。在另一个示例中，光可以用于对粘合剂倒角的物理特性进行成像(并且由此对其进行测量)。图4A示出了半导体器件400的一部分，所述半导体器件400包括第一半导体元件402(例如，管芯或衬底)、设置在元件402上的粘合剂层404、以及设置在粘合剂层404上的第二半导体元件406。倒角408(其为粘合剂材料404的一部分)延伸超过元件406的边缘。期望的是测量倒角408的物理特性，例如，高度410、长度412或曲率“c”。为了确定粘合剂材料并未延伸到其不应该延伸的区域，获知这种特性可能是有用的。当然，可以测量诸如地形图或地形表示之类的较复杂的物理特性。图4B示出了这种地图的示例。
根据本发明所测量的倒角的物理特性可以包括测量围绕整个周长的特性，倒角沿着所述整个周长延伸。例如，如果倒角围绕半导体器件的整个边缘延伸，则可以测量整个倒角。
在根据本发明(例如，利用相机、结构光等)所产生的图像中，可能出现各种成像难题。一个这种难题与可能使图像较不清晰的热点有关。图5示出了对减少这种热点可能有用的结构。更具体地，光源576(例如，LED或其它光源)通过起偏器1发射，并且进入投影元件502(例如，包括用于产生结构光图像的光栅等)。结构光508漫射离开测试样品578(例如，半导体器件上的粘合剂材料等)。漫射图像520通过起偏器2发射并且由相机518接收。起偏器的使用对降低热点的影响可能是有用的。
本发明的某些示例性实施例可以用于测量半导体器件的其它物理特性，例如平面度特性、裂纹扩展、以及其它特性。图6示出了包括结构光源602(例如，示出为数字条纹投影机602，但不限于此)的示例性热压接合机600(为清楚起见，省略了许多元件)。光源602包括光栅604或其它结构(例如数字条纹投影机实施例中的DLP芯片)。从源602发射的光608是结构光，其包括例如利用光栅604施加在光上的结构光图案。结构光608由漫射屏630a接收。图6还示出了支撑结构610，其支撑元件612。例如，元件612可以是诸如具有反射(或至少部分反射)上表面644的半导体管芯或其它元件之类的半导体器件。相机648对包括元件612的反射表面644的视场640内的区域进行成像。这种反射允许相机对元件612所看到(以及可能被元件612扭曲)的结构光图案进行成像。如本领域技术人员将领会到的，这种类型的结构允许如附图标记630b所示的虚像的成像。如上所述，由相机648产生的图像可以用于测量元件612的物理特性，例如平面度特性和/或裂纹扩展特性。图7A-7C是被使用图6中所示的技术的各种半导体器件扭曲的结构光的示例性图像。
在本发明的某些示例性实施例中，可能可取的是对漫射表面特性(例如，粘合剂材料特性)和反射表面特性(例如，平面度特性)进行成像。图8示出了热压接合机800的元件。为清楚起见，省略了许多元件。机器800包括结构光源802(例如，示出为数字条纹投影机802，但不限于此)。光源802包括光栅804或其它结构(例如数字条纹投影机实施例中的DLP芯片)。从源802发射的光808是结构光，其包括例如利用光栅804施加在光上的结构光图案。图8还示出了支撑结构810，其支撑元件812。例如，支撑元件812可以是包括漫射表面814(例如，粘合剂材料)和反射表面844(例如，管芯表面)的半导体器件。通过转换漫射屏850(示出为液晶漫射屏，但不限于此)来接收结构光808。当期望对反射表面844进行成像时，屏幕850可以工作在漫射模式，其允许相机848如以上关于图6所描述的那样产生图像，并且由此允许测量物理特性(例如，平面度特性、裂纹扩展特性等)。当期望对漫射表面814进行成像时，屏幕850可以工作在透明模式，其允许相机818如以上关于图1所描述的那样产生图像，并且由此允许测量物理特性(例如，体积、体积分布等)。
尽管已经主要关于利用结构光进行成像对本发明进行了描述，但是本发明并不限于此。本发明的某些方面适用于利用其它形式和/或结构的光。
尽管已经主要关于热压接合机和工艺(例如，将第一半导体器件元件热压接合到另一个半导体器件元件)对本发明进行了描述，但是本发明并不限于此。例如，本发明的教导适用于传统管芯连接系统及其使用方法。
在本文中所述的本发明的某些示例性实施例中，描述了闭环过程(或反馈驱动过程)。例如，如果测量了给定的物理特性(例如，粘合剂材料体积或分布)并且该给定的物理特性不在预定规范(例如，耐受性)内，则可以以闭环方式调节分配工艺的方面(例如，分配粘合剂的体积、分配材料的速率、分配材料的温度以及其它方面)。然而，调节热压接合工艺的其它方面以获得期望的物理特性规范也在本发明的范围内。例如，这种可以调节的热压接合工艺方面包括接合温度、接合温度分布、接合力、接合时间等。
尽管本文中参考特定实施例示出并描述了本发明，但是本发明并不是要限制于所示的细节。相反，在权利要求的等同物的范围内、并且在不脱离本发明的情况下，可以对细节做出各种修改。

Claims (39)

1.一种利用结构光来确定半导体器件元件上的粘合剂材料的物理特性的方法，所述方法包括以下步骤：
(1)将结构光图案应用到半导体器件元件的粘合剂材料上；
(2)利用相机创建所述结构光图案的图像；以及
(3)分析所述结构光图案的所述图像，以确定所述粘合剂材料的物理特性。
2.根据权利要求1所述的方法，其中，从由环氧树脂材料、非导电膏材料、和固化液材料组成的组中选择所述粘合剂材料。
3.根据权利要求1所述的方法，其中，所述结构光图案包括平行条图案和栅格图案的至少其中之一。
4.根据权利要求1所述的方法，还包括在步骤(1)之前将所述粘合剂材料分配到所述半导体器件元件上的步骤。
5.根据权利要求4所述的方法，其中，步骤(3)包括利用所述图像来确定所述物理特性是否在预定的规范内。
6.根据权利要求5所述的方法，还包括以下步骤：如果确定所述物理特性不在所述预定的规范内，则为后续半导体器件元件调整分配所述粘合剂材料的步骤的方面。
7.根据权利要求6所述的方法，其中，所述调整步骤利用闭环过程来实现，从而至少部分地基于所述确定的物理特性来自动确定所述调整的方面。
8.根据权利要求1所述的方法，其中，步骤(1)、(2)和(3)中的每个步骤均在热压接合机上执行。
9.根据权利要求1所述的方法，其中，所述物理特性包括所述粘合剂材料的体积和所述粘合剂材料的分布的至少其中之一。
10.一种在热压接合机上利用结构光来确定半导体器件元件上的粘合剂材料的物理特性的方法，所述方法包括以下步骤：
(1)将粘合剂材料分配到半导体器件元件上，所述半导体器件元件被配置为通过热压接合工艺接纳另一个半导体器件；
(2)利用所述热压接合机的光源将结构光图案应用到所述粘合剂材料上；
(3)利用所述热压接合机的相机创建所述结构光图案的图像；以及
(4)分析所述结构光图案的所述图像，以确定所述粘合剂材料的物理特性。
11.一种利用结构光来确定涂覆在半导体器件的元件之间的粘合剂材料的倒角的物理特性的方法，所述方法包括以下步骤：
(1)将结构光图案应用于半导体器件的元件之间的粘合剂倒角；
(2)利用相机创建所述结构光图案的图像；以及
(3)分析所述结构光图案的所述图像，以确定所述粘合剂倒角的物理特性。
12.根据权利要求11所述的方法，其中，所述结构光图案包括平行条图案和栅格图案的至少其中之一。
13.根据权利要求11所述的方法，其中，步骤(3)包括利用所述图像来确定所述物理特性是否在预定的规范内。
14.根据权利要求13所述的方法，还包括以下步骤：如果确定所述物理特性不在所述预定的规范内，则为后续半导体器件调整分配所述粘合剂材料的步骤的方面。
15.根据权利要求14所述的方法，其中，所述调整步骤利用闭环过程来实现，从而至少部分地基于所述确定的物理特性来自动确定所述调整的方面。
16.根据权利要求11所述的方法，其中，步骤(1)、(2)和(3)中的每个步骤均在热压接合机上执行。
17.根据权利要求11所述的方法，其中，所述物理特性包括倒角的高度和粘合剂倒角的长度的至少其中之一。
18.一种在热压接合机上利用结构光来确定涂覆在半导体器件的元件之间的粘合剂材料的倒角的物理特性的方法，所述方法包括以下步骤：
(1)将半导体器件的第一元件热压接合到所述半导体器件的第二元件，从而使粘合剂材料涂覆在所述第一元件和所述第二元件之间的区域中；
(2)在步骤(1)之后，将结构光图案应用于所述粘合剂材料的粘合剂倒角；
(3)利用相机创建所述结构光图案的图像；以及
(4)分析所述结构光图案的所述图像，以确定所述粘合剂材料的物理特性。
19.一种利用结构光来确定半导体器件的平面度特性的方法，所述方法包括以下步骤：
(1)利用相机创建由半导体器件的表面反射的结构光图案的图像；以及
(2)分析所述结构光图案的所述图像，以确定所述半导体器件的平面度特性。
20.根据权利要求19所述的方法，其中，所述结构光图案包括平行条图案和栅格图案的至少其中之一。
21.根据权利要求19所述的方法，其中，步骤(2)包括利用所述图像来确定所述平面度特性是否在预定的规范内。
22.根据权利要求19所述的方法，其中，步骤(1)和(2)中的每个步骤均在热压接合机上执行。
23.根据权利要求19所述的方法，其中，步骤(1)包括将所述结构光图案从光源投射到漫射屏上，利用所述半导体器件的所述表面将投射的光图案反射到所述相机。
24.一种在热压接合机上利用结构光来确定半导体器件的平面度特性的方法，所述方法包括以下步骤：
(1)将半导体器件固定在热压接合机上的位置中；
(2)利用相机创建来自所述半导体器件的表面的结构光图案的图像；以及
(3)分析所述结构光图案的所述图像，以确定所述半导体器件的平面度特性。
25.根据权利要求24所述的方法，其中，步骤(1)包括利用所述热压接合机的拾取工具和所述热压接合机的放置工具的至少其中之一来固定所述半导体器件。
26.一种热压接合机，包括：
支撑结构，其用于支撑包括粘合剂材料的半导体器件元件；
结构光源，其用于在所述粘合剂材料上提供结构光图案；以及
相机，其用于创建所述粘合剂材料上的所述结构光图案的图像。
27.根据权利要求26所述的热压接合机，其中，从由环氧树脂材料、非导电膏材料、和固化液材料组成的组中选择所述粘合剂材料。
28.根据权利要求26所述的热压接合机，其中，所述结构光图案包括平行条图案和栅格图案的至少其中之一。
29.根据权利要求26所述的热压接合机，还包括分配器，其用于将所述粘合剂材料分配到所述半导体器件元件上。
30.根据权利要求26所述的热压接合机，还包括图像处理硬件和软件，所述图像处理硬件和软件用于分析所述图像以确定所述粘合剂材料的物理特性。
31.根据权利要求30所述的热压接合机，其中，所述物理特性包括所述粘合剂材料的体积和所述粘合剂材料的体积的分布的至少其中之一。
32.根据权利要求26所述的热压接合机，还包括图像处理硬件和软件，所述图像处理硬件和软件用于分析所述图像以确定所述粘合剂材料的物理特性，并且确定所述物理特性是否在预定的规范内。
33.根据权利要求26所述的热压接合机，其中，所述粘合剂材料为设置在所述半导体器件元件与另一个半导体器件元件之间的粘合剂的倒角部分。
34.一种热压接合机，包括：
支撑结构，其用于支撑半导体器件；
结构光源，其用于提供结构光图案；以及
相机，其用于利用所述半导体器件的反射表面来间接观察所述结构光图案，所述相机创建所述结构光图案的图像。
35.根据权利要求34所述的热压接合机，其中，所述结构光图案包括平行条图案和栅格图案的至少其中之一。
36.根据权利要求34所述的热压接合机，还包括图像处理硬件和软件，所述图像处理硬件和软件用于分析所述图像以确定所述半导体器件的平面度特性。
37.根据权利要求36所述的热压接合机，其中，所述图像处理硬件和软件被配置为确定所述平面度特性是否在预定的规范内。
38.根据权利要求34所述的热压接合机，还包括用于接收来自所述结构光源的所述结构光图案的漫射屏。
39.根据权利要求34所述的热压接合机，还包括用于在所述相机间接观察所述结构光图案时固定所述半导体器件的拾取工具和放置工具的至少其中之一。
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Application publication date: 20150415