CN104503527A - Reference current generating circuit - Google Patents
Reference current generating circuit Download PDFInfo
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- CN104503527A CN104503527A CN201410686561.1A CN201410686561A CN104503527A CN 104503527 A CN104503527 A CN 104503527A CN 201410686561 A CN201410686561 A CN 201410686561A CN 104503527 A CN104503527 A CN 104503527A
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- transistor
- grid
- drain electrode
- reference current
- generating circuit
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Abstract
The invention discloses a reference current generating circuit comprising a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor and a voltage divider. The first transistor, the second transistor and the third transistor form a current mirror structure, a grid electrode of the fourth transistor is connected with a drain electrode of the same and a drain electrode of the second transistor while a source electrode of the same is grounded, a grid electrode of the fifth transistor is connected with that of the fourth transistor while a drain electrode is connected with a drain electrode of the first transistor, a drain electrode of the sixth transistor is connected with a source electrode of the fifth transistor while a source electrode of the same is grounded, and the voltage divider provides bias voltage enabling the sixth transistor to work in a linear area to a grid electrode of the sixth transistor. Transistors working in a deep linear area are used to replace resistors, so that high-accuracy reference current which is slightly influenced by temperature or process parameters can be generated.
Description
Technical field
The present invention relates to integrated circuit (IC) design, particularly a kind of circuit producing reference current.
Background technology
In the process of simulation COMS integrated circuit (IC) design, the circuit often needing can produce reference current provides bias current, such as a current mirroring circuit for other circuit.At present, the simplest also the most frequently used circuit structure be as shown in Figure 1 with irrelevant biased of power supply.In circuit shown in Fig. 1, circuit is biased by oneself, and transistor M3 and M4 replicates Iout, thus determines Iref.In essence, Iref quilt " bootstrapping " is to Iout.The function of resistance Rs determines unique current value.If ignore bulk effect, can obtain:
As can be seen from formula, output current value Iout and supply voltage have nothing to do, but are inversely proportional to the square value of resistance Rs.
But under modern COMS technique, resistance value size affects by technological parameter and temperature, there is very large deviation in different situations, output current value is made to have larger deviation, and the reduction greatly of the output current precision that this is caused by resistance, be difficult to as a rule accept.
Therefore, need to propose a kind of overall performance neither affecting circuit, also can eliminate the novel reference current generating circuit that the output current degree of accuracy brought more greatly due to resistance deviation is not high.
Summary of the invention
Fundamental purpose of the present invention is the defect overcoming prior art, provides the reference current generating circuit that a kind of output current degree of accuracy is high.
The present invention adopts following technical scheme: a kind of reference current generating circuit, comprise: form the first transistor of current-mirror structure, transistor seconds and third transistor, the grid of described the first transistor is connected with the grid of described third transistor with the grid of its drain electrode, described transistor seconds; The source electrode of described the first transistor, transistor seconds and third transistor connects supply voltage, and the drain electrode of described third transistor is the output terminal of described reference current generating circuit; 4th transistor, its grid is connected with the drain electrode of its drain electrode and described transistor seconds, source ground; 5th transistor, its grid is connected with the grid of described 4th transistor, drains to be connected with the drain electrode of described the first transistor; 6th transistor, its drain electrode is connected with the source electrode of described 5th transistor, source ground; Voltage divider, the grid to described 6th transistor provides and makes the bias voltage of described 6th transistor in linear zone.
The preferred a kind of technical scheme of the present invention, described reference current generating circuit also comprises: the 7th transistor, and its grid is connected with the drain electrode of its drain electrode and described 5th transistor, and its drain electrode is connected with the drain electrode of described the first transistor; 8th transistor, its grid is connected with the grid of described 7th transistor, drains to be connected with the drain electrode of described transistor seconds, and source electrode is connected with the drain electrode of described 4th transistor.
The preferred a kind of technical scheme of the present invention, described voltage divider is included in first sectional pressure element and the second sectional pressure element of connecting between described supply voltage and ground, and the grid of described 6th transistor is connected between described first sectional pressure element and described second sectional pressure element.
The preferred a kind of technical scheme of the present invention, described the first transistor and described transistor seconds measure-alike.
The preferred a kind of technical scheme of the present invention, described 7th transistor and described 8th transistor measure-alike.
The preferred a kind of technical scheme of the present invention, described first sectional pressure element is resistance.
The preferred a kind of technical scheme of the present invention, described second sectional pressure element comprises the 9th transistor and the tenth transistor that all work in saturation region, and the grid of wherein said 9th transistor is connected with described first sectional pressure element with the grid of its drain electrode, described 6th transistor; The grid of described tenth transistor is connected with its drain electrode, source ground.
The preferred a kind of technical scheme of the present invention, described bias voltage is the threshold voltage sum of described 9th transistor and the tenth transistor.
The preferred a kind of technical scheme of the present invention, described second sectional pressure element comprises: the first resistance of series connection and the second resistance, and grid and described first sectional pressure element of described first resistance and described 6th transistor are connected, described second resistance eutral grounding; Triode, its base stage is connected between described first resistance and the second resistance, and its emitter is connected with the grid of described 6th transistor, its grounded collector.
The preferred a kind of technical scheme of the present invention, described second sectional pressure element is voltage stabilizing diode, and its positive pole connects described first sectional pressure element, its minus earth.
Compared with prior art, the reference current generating circuit of the present invention transistor being operated in degree of depth linear zone replaces linear resistance, can solve the output current caused because resistance produces deviation because technological parameter and temperature affect and read carefully and thoroughly lower problem.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the reference current generating circuit of prior art.
Fig. 2 is the circuit diagram of the reference current generating circuit of one embodiment of the invention.
Fig. 3 is the circuit diagram of the reference current generating circuit of one embodiment of the invention.
Fig. 4 is the circuit diagram of the reference current generating circuit of one embodiment of the invention.
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
In this manual and in detail in the claims, should understand when an element is called as " connection " or " is connected " with another element, it can be directly connected to another element, maybe can there is intervention element.
Fig. 2 is the circuit diagram of the reference current generating circuit of first embodiment of the invention, and it comprises the first transistor M1, the transistor seconds M2 and third transistor M3 that form current-mirror structure.Wherein, the grid of the first transistor M1 is connected with the grid of third transistor M3 with its drain electrode, the grid of transistor seconds M2; The source electrode of the first transistor M1, transistor seconds M2 and third transistor M3 meets supply voltage VDD, and the drain electrode of third transistor M3 is the output terminal of reference current generating circuit.Preferably, the first transistor M1 is identical with the size of transistor seconds M2, thus when circuit stability works with the ratio of 1:1 by electric current I
2copy as electric current I
1, i.e. I
1=I
2.Third transistor M3 is of a size of the K1 of the first transistor M1 doubly.
Reference current generating circuit also comprises the 4th transistor M4 and the 5th transistor M5.Wherein, the grid of the 4th transistor M4 is connected with the drain electrode of its drain electrode and transistor seconds M2, the source ground of the 4th transistor M4; The grid of the 5th transistor M5 is connected with the grid of the 4th transistor M4, drains to be connected with the drain electrode of the first transistor M1.Because the 4th transistor M4 is different with the source voltage of the 5th transistor M5, their the proportional coefficient of size is the proportionate relationship of K, to ensure the electric current I exported
1and I
2identical.In the present invention, instead of traditional resistance with the 6th transistor M6 being operated in linear zone, as shown in the figure, the drain electrode of the 6th transistor M6 is connected with the source electrode of the 5th transistor M5, source ground.For guaranteeing that the 6th transistor M6 is operated in linear zone, reference current generating circuit provides enough bias voltage Vref by voltage divider to the grid of the 6th transistor M6.Because the 6th transistor M6 is operated in linear zone, the i.e. drain-source voltage Vds<<2 (Vgs – Vth) of transistor M6, this linear relationship shows that the passage between source and drain is equivalent to a linear resistance Ron, and linear resistance Ron can be expressed as:
The current value Iout that then now reference current generating circuit produces is:
Wherein, Un is the carrier mobility of transistor M6, Cox is the unit gate capacitance of transistor M6, (W/L) n6 is the breadth length ratio of transistor M6, Vgs-Vth is the overdrive voltage of transistor M6, from above formula, output current Iout is only relevant with the overdrive voltage of the 6th transistor M6, which eliminates the problem of the output current change caused due to resistance deviation.
Preferably, reference current generating circuit also comprises the 7th transistor M7 and the 8th transistor M8 of common gate structure.7th transistor M7 is connected between the first transistor M1 and the 5th transistor M5, and the grid of concrete transistor M7 is connected with the drain electrode of its drain electrode and the 5th transistor M5, and its drain electrode is connected with the drain electrode of the first transistor M1.8th transistor M8 is connected between transistor seconds M2 and the 4th transistor M4, and the grid of concrete transistor M8 is connected with the grid of the 7th transistor M7, drains to be connected with the drain electrode of transistor seconds M2, and source electrode is connected with the drain electrode of the 4th transistor M4.Transistor M7 and M8's is measure-alike, and its effect ensures that the drain voltage of transistor M1 and M2 is equal.
For realizing the function providing grid voltage to the 6th transistor, voltage divider comprises and is connected on the first sectional pressure element between supply voltage VDD and ground and the second sectional pressure element, the grid of the 6th transistor M6 is connected between the first sectional pressure element and the second sectional pressure element, receives bias voltage Vref.First sectional pressure element is active pull-up RS.Please continue to refer to Fig. 2, in the present embodiment, the second sectional pressure element comprises the 9th transistor M9 and the tenth transistor M10 that all work in saturation region.Wherein, the grid of the 9th transistor M9 is connected with the first sectional pressure element Rs with the grid of its drain electrode, the 6th transistor M6; The grid of the tenth transistor M10 is connected with its drain electrode, source ground.Thus, active pull-up RS, transistor M9 and M10 provide a stable gate bias voltage to transistor M6, and this bias value is the threshold voltage sum of transistor M9 and M10, and the resistance value between the drain-to-source of such transistor M6 keeps stable.
Variant embodiment of the present invention is respectively shown in Fig. 3 and Fig. 4.First please refer to Fig. 3, the difference of itself and above-described embodiment is, the second sectional pressure element of voltage divider is different from above-described embodiment.In the present embodiment, the second sectional pressure element comprises the first resistance R1 and the second resistance R2 of series connection, and PNP triode.Grid and the first sectional pressure element Rs of the first resistance R1 other end and the 6th transistor M6 are connected, the other end ground connection of the second resistance R2; The base stage of triode is connected between the first resistance R1 and the second resistance R2, and emitter is connected with the grid of the 6th transistor M6, grounded collector.
Thus, when the electric current flowed through in the first resistance R1 and the second resistance R2 is very little compared to the electric current in triode, the bias voltage to the 6th transistor M6 grid exports:
Wherein V
eBfor the voltage between the emitter of triode and base stage, stable bias voltage can be provided to the grid of the 6th transistor equally by the structure of this kind second sectional pressure element.
Figure 4 shows that the reference current generating circuit of another embodiment of the present invention, with the first and second embodiments unlike, in the present embodiment, the second sectional pressure element of voltage divider is voltage stabilizing diode, its positive pole connects the grid of the first sectional pressure element Rs and the 6th transistor M6, its minus earth, the active pull-up of voltage stabilizing diode and the first sectional pressure element provides stable bias voltage to the grid of the 6th transistor M6.
In the embodiment shown in Fig. 3 and Fig. 4, the size of transistor M1 ~ M5 all can be identical with the first embodiment with annexation, also can comprise transistor M7 and M8 identical with the first embodiment, not repeat them here.
In sum, the reference current generating circuit that the present invention the proposes transistor being operated in degree of depth linear zone replaces resistance, can solve the output current caused because resistance produces deviation because technological parameter and temperature affect and read carefully and thoroughly lower problem.
Although the present invention discloses as above with preferred embodiment; right described many embodiments are citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection domain that the present invention advocates should be as the criterion with described in claims.
Claims (10)
1. a reference current generating circuit, is characterized in that, comprising:
Form the first transistor of current-mirror structure, transistor seconds and third transistor, the grid of described the first transistor is connected with the grid of described third transistor with the grid of its drain electrode, described transistor seconds; The source electrode of described the first transistor, transistor seconds and third transistor connects supply voltage, and the drain electrode of described third transistor is the output terminal of described reference current generating circuit;
4th transistor, its grid is connected with the drain electrode of its drain electrode and described transistor seconds, source ground;
5th transistor, its grid is connected with the grid of described 4th transistor, drains to be connected with the drain electrode of described the first transistor;
6th transistor, its drain electrode is connected with the source electrode of described 5th transistor, source ground;
Voltage divider, the grid to described 6th transistor provides and makes the bias voltage of described 6th transistor in linear zone.
2. reference current generating circuit according to claim 1, is characterized in that, also comprises:
7th transistor, its grid is connected with the drain electrode of its drain electrode and described 5th transistor, and its drain electrode is connected with the drain electrode of described the first transistor;
8th transistor, its grid is connected with the grid of described 7th transistor, drains to be connected with the drain electrode of described transistor seconds, and source electrode is connected with the drain electrode of described 4th transistor.
3. reference current generating circuit according to claim 1, it is characterized in that, described voltage divider is included in first sectional pressure element and the second sectional pressure element of connecting between described supply voltage and ground, and the grid of described 6th transistor is connected between described first sectional pressure element and described second sectional pressure element.
4. reference current generating circuit according to claim 1, is characterized in that, described the first transistor and described transistor seconds measure-alike.
5. reference current generating circuit according to claim 2, is characterized in that, described 7th transistor and described 8th transistor measure-alike.
6. reference current generating circuit according to claim 4, is characterized in that, described first sectional pressure element is resistance.
7. reference current generating circuit according to claim 4, it is characterized in that, described second sectional pressure element comprises the 9th transistor and the tenth transistor that all work in saturation region, and the grid of wherein said 9th transistor is connected with described first sectional pressure element with the grid of its drain electrode, described 6th transistor; The grid of described tenth transistor is connected with its drain electrode, source ground.
8. reference current generating circuit according to claim 7, is characterized in that, described bias voltage is the threshold voltage sum of described 9th transistor and the tenth transistor.
9. reference current generating circuit according to claim 4, is characterized in that, described second sectional pressure element comprises:
First resistance of series connection and the second resistance, grid and described first sectional pressure element of described first resistance and described 6th transistor are connected, described second resistance eutral grounding;
Triode, its base stage is connected between described first resistance and the second resistance, and its emitter is connected with the grid of described 6th transistor, its grounded collector.
10. reference current generating circuit according to claim 4, is characterized in that, described second sectional pressure element is voltage stabilizing diode, and its positive pole connects described first sectional pressure element, its minus earth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410686561.1A CN104503527A (en) | 2014-11-25 | 2014-11-25 | Reference current generating circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410686561.1A CN104503527A (en) | 2014-11-25 | 2014-11-25 | Reference current generating circuit |
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| CN104503527A true CN104503527A (en) | 2015-04-08 |
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|---|---|---|---|
| CN201410686561.1A Pending CN104503527A (en) | 2014-11-25 | 2014-11-25 | Reference current generating circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109062305A (en) * | 2018-07-26 | 2018-12-21 | 上海华虹宏力半导体制造有限公司 | Reference voltage source circuit |
| CN111665898A (en) * | 2020-06-23 | 2020-09-15 | 华南理工大学 | Power amplifier chip biasing circuit based on GaAs HBT technology |
| CN114265461A (en) * | 2021-12-15 | 2022-04-01 | 深圳飞骧科技股份有限公司 | Reference voltage source |
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Cited By (4)
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|---|---|---|---|---|
| CN109062305A (en) * | 2018-07-26 | 2018-12-21 | 上海华虹宏力半导体制造有限公司 | Reference voltage source circuit |
| CN109062305B (en) * | 2018-07-26 | 2020-06-09 | 上海华虹宏力半导体制造有限公司 | Reference voltage source circuit |
| CN111665898A (en) * | 2020-06-23 | 2020-09-15 | 华南理工大学 | Power amplifier chip biasing circuit based on GaAs HBT technology |
| CN114265461A (en) * | 2021-12-15 | 2022-04-01 | 深圳飞骧科技股份有限公司 | Reference voltage source |
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