CN104465450A - Gas supply device and method for cooling static sucker - Google Patents
Gas supply device and method for cooling static sucker Download PDFInfo
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- CN104465450A CN104465450A CN201310431420.0A CN201310431420A CN104465450A CN 104465450 A CN104465450 A CN 104465450A CN 201310431420 A CN201310431420 A CN 201310431420A CN 104465450 A CN104465450 A CN 104465450A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a gas supply device and method for a cooling static sucker. Reaction gas with first pressure is changed into first process gas with second pressure through a flow divider in a first gas path and the first process gas is delivered to a substrate placed on the static sucker for reaction treatment; a second branch gas path is communicated with a pipeline in front of the flow divider, a path of reaction gas is divided or the reaction gas is mixed with diluent gas so as to form second process gas with first pressure, the second process gas is delivered to the edge of the back face of the substrate through gas channels on the edge in the static sucker, helium or the second process gas is delivered to the center of the surface of the substrate through the gas channels in the center, and therefore the heat transfer cooling effect is achieved. Due to the fact that the composition of the first process gas and the composition of the second process gas are the same or are quite similar, reaction conditions needed for substrate edge treatment are fundamentally not changed when the first process gas and the second process gas are mixed; the high-pressure second process gas is large in pressure supply range, the defect that heat conduction efficiency is lower than that of helium can be effectively overcome, and the cooling effect is guaranteed.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of feeder for cooling electrostatic chuck and air supply method.
Background technology
The structural representation of existing a kind of vacuum processing chamber 10 as shown in Figure 1.Process gas 40 enters in vacuum processing chamber 10 from top, the surface of substrate 30 is etched, thin film deposition or other some process.Bottom in this vacuum processing chamber 10 is provided with electrostatic chuck 20, is used for being fixed support to the substrate 30 be positioned on this electrostatic chuck 20 in processing procedure.Helium 60 is as refrigerating gas, first via the some gas passages 50 offered in electrostatic chuck 20, pass from below through this electrostatic chuck 20 and arrive its end face, conduct heat, to realize the cooling to substrate 30 in the back side flowing through whole substrate 30 via the gap between substrate 30 back side and electrostatic chuck 20 end face again.But, helium 60 can leak at the edge of substrate 30, and carry out mixing (Mixed Zone that label 70 is depicted as gas) with process gas 40, thus the reaction condition at substrate 30 edge is changed, the effect after causing substrate 30 centerand edge region to be made is inconsistent.
Current solution be the diameter of electrostatic chuck 20 is slightly less than above it put the diameter of substrate 30, allow substrate 30 can cover electrostatic chuck 20 completely, thus the Mixed Zone of helium 60 and process gas 40 be limited in the below of substrate 30.But in order to obtain better Temperature Distribution on the substrate 30, the size increasing electrostatic chuck is inexorable trend, and above-mentioned solution but runs in the opposite direction with it.Therefore, in this case, a kind of new electrostatic chuck and air feed scheme is needed badly.
Summary of the invention
The object of the present invention is to provide a kind of feeder, and change the air supply method of wherein refrigerating gas, in large scale electrostatic chuck, operation gas replaces or partly replaces helium as refrigerating gas, in the embodiment avoiding substrate edge gas and vapor permeation to cause reaction condition to change, by increasing to pressure during substrate edge delivery technology gas, make up the deficiency of process gas heat transfer efficiency lower than helium, guarantee the cooling effect to substrate.
In order to achieve the above object, first technical scheme of the present invention is to provide a kind of feeder for cooling electrostatic chuck, and described electrostatic chuck is positioned at the bottom of vacuum treatment indoor, is fixed support to the substrate be placed on this electrostatic chuck;
Described feeder includes the first gas circuit and the second gas circuit; First process gas with the second pressure is transported to vacuum treatment indoor by described first gas circuit, carries out reaction treatment to substrate surface;
Some gas passages are offered in described electrostatic chuck; Described second gas circuit will have the second process gas of the first pressure as refrigerating gas, at least be transported to the corresponding gas passage being arranged in edges of electrostatic chuck, make described second process gas can flow into space between substrate back and electrostatic chuck end face, so that carry out heat transfer cooling to substrate;
Wherein, described second process gas only comprises the reacting gas of described first process gas composition or the mist of described reacting gas and diluent gas; Further, the second pressure that the first pressure that described second process gas has has higher than described first process gas.
Preferably, described first gas circuit is provided with leading portion pipeline, and the reacting gas with the first pressure is transported to shunt, forms by shunt conversion described first process gas that a road has the second pressure; Described first gas circuit is also provided with back segment pipeline, described first process gas is transported to described vacuum treatment indoor;
Described second gas circuit is connected to the leading portion pipeline of described first gas circuit, so that have the gas of the first pressure as described second process gas using separating a road from described reacting gas, and is transported to electrostatic chuck by described second gas circuit.
Preferably, be connected to described second gas circuit by collateral branch's gas circuit, in the road reacting gas via described second gas circuit conveying, be mixed into the gas after a small amount of diluent gas as described second process gas.
Preferably, described diluent gas is inert gas or active gases.
Preferably, described inert gas is any one or its combination in any in helium, neon, argon gas, Krypton, xenon or nitrogen.
Preferably, described active gases is oxygen-containing gas.
Preferably, described second gas circuit is provided with device pressure during described second process gas conveying or flow being carried out further to regulating and controlling.
In preferred embodiment, described electrostatic chuck diameter is equal to or greater than the diameter of substrate;
Described electrostatic chuck is provided with central area, and round the fringe region of described central area; In the gas passage of described electrostatic chuck, comprise the some groups of first passages being positioned at central area, and be positioned at some groups of second channels of fringe region;
Described second process gas is delivered to the marginal position of substrate back by described second channel, and heat transfer cooling is carried out in the center that helium is delivered to substrate back by described first passage; Or described second process gas all carried by described first passage and second channel, so that carry out heat transfer cooling to the whole back side of substrate.
Preferably, gas pressure when carrying described second process gas by second channel, is greater than by gas pressure during first passage conveying helium.
There is provided a kind of feeder for cooling electrostatic chuck in a preferred embodiment of the present invention, described electrostatic chuck is positioned at the bottom of vacuum treatment indoor, is fixed support to the substrate be placed on this electrostatic chuck;
Described feeder includes the first gas circuit and the second gas circuit; Described first gas circuit is provided with leading portion pipeline, and the reacting gas with the first pressure is transported to shunt, forms first process gas with the second pressure by shunt conversion; Described first gas circuit is also provided with back segment pipeline, described first process gas is transported to vacuum treatment indoor, carries out reaction treatment to substrate surface;
To there is the second process gas of the first pressure as refrigerating gas by the second gas circuit, be transported in the corresponding gas passage offered in electrostatic chuck, make described second process gas can flow into space between substrate back and electrostatic chuck end face, so that carry out heat transfer cooling to substrate;
Described second gas circuit is connected to the leading portion pipeline of described first gas circuit, to obtain from reacting gas described in the road wherein separated; Control collateral branch's gas circuit described second gas circuit of access and carry diluent gas, making described second process gas be the mist of described reacting gas and diluent gas; Or, control described collateral branch gas circuit and do not access described second gas circuit, make described second process gas be the reacting gas only comprising the first process gas composition;
Wherein, the second pressure that the first pressure that described second process gas has has higher than described first process gas.
Another technical scheme of the present invention is to provide a kind of air supply method for cooling electrostatic chuck:
The reacting gas with the first pressure is converted to first process gas with the second pressure in the first gas circuit, simultaneously in the second gas circuit using from there is the road gas that separates in the described reacting gas of the first pressure as the second process gas, or the mist of the gas separated on this road and diluent gas is as the second process gas; The second pressure that the first pressure that described second process gas has has higher than described first process gas;
Described first process gas is transported to vacuum treatment indoor, reaction treatment is carried out to the substrate be positioned on electrostatic chuck; Using described second process gas as refrigerating gas, by being positioned at the gas passage of fringe region in described electrostatic chuck, the marginal position to substrate back is carried; Also by being positioned at the gas passage of central area in this electrostatic chuck, the center to substrate back is carried helium or carries described second process gas, carries out heat transfer cooling to substrate.
Preferably, by being mixed into a small amount of inert gas or active gases forms described second process gas in the road reacting gas to described second gas circuit conveying.
Preferably, carrying described second process gas to carry out the gas pressure conducted heat when cooling, being greater than by carrying helium to carry out the gas pressure conducted heat when cooling.
Compare described in background technology in electrostatic chuck, be used alone the scheme of helium as refrigerating gas, by identical with the first process gas composition used during substrate surface treatment or closely the second process gas in the present invention, replacement helium is delivered to the marginal position of substrate back or heat transfer cooling is carried out to substrate in whole positions of substrate back, can effectively avoid at substrate edge occurring because gas with various mixes the problem causing processing reaction condition to change, therefore can be applied to the larger electrostatic chuck of size, thus on substrate, obtain better Temperature Distribution effect.
By improving pressure during conveying the second process gas in the present invention, the deficiency of its heat transfer efficiency lower than helium can be made up, to guarantee the heat transfer cooling effect to substrate; And the pressure extent of supply of the second process gas is larger.By in the gas circuit before from air feed end to shunt; directly synchronous second process gas of reacting gas as cooling of drawing a road high pressure; little to the variation of existing equipment gas circuit; transformation is implemented convenient, and can guarantee that the second process gas obtained is identical with the first process gas kind of low pressure after shunt.
When the second process gas is mist with the diluent gas accessed by collateral branch's gas circuit of the reacting gas identical with the first process gas composition, diluent gas (as helium) is more, then good cooling results, but the reaction speed at edge is low; Reacting gas is more, then edge response speed obtains benefit and tastes, but cooling effect needs very atmospheric pressure to realize.These two kinds of compositions are only two extreme cases, according to the different requirements that under different application occasion, cooling requires and reaction rate compensates, can select the mixed proportion of reacting gas and diluent gas in adjustment second process gas.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of existing vacuum processing chamber and air feed situation thereof;
Fig. 2 uses the vacuum processing chamber of electrostatic chuck and the schematic diagram of air feed situation thereof described in the embodiment of the present invention 1;
Fig. 3 is the vertical view of gas passage in electrostatic chuck described in the embodiment of the present invention 1;
Fig. 4 uses the vacuum processing chamber of electrostatic chuck and the schematic diagram of air feed situation thereof described in the embodiment of the present invention 2;
Fig. 5 is the vertical view of gas passage in electrostatic chuck described in the embodiment of the present invention 2;
Fig. 6 is the air feed situation schematic diagram of feeder of the present invention;
Fig. 7 is the another kind of air feed situation schematic diagram of feeder of the present invention.
Embodiment
As shown in Figure 2, Figure 4 shows, the bottom in vacuum processing chamber 1 is provided with the electrostatic chuck 2 that diameter is equal to or greater than substrate 3 diameter, is used for being fixed support to the superincumbent substrate 3 of placement.First process gas 40 imports in vacuum processing chamber 1 from top, etches or other process to substrate 3 surface.Using road second process gas 80 or 80 ' replace or partly replace helium as refrigerating gas, via the corresponding gas passage offered in electrostatic chuck 2, be transported to the space between substrate 3 back side and electrostatic chuck 2 end face, heat transfer cooling is carried out to substrate 3.Use or gas closely identical with the first process gas 40 composition as the second process gas 80 or 80 ', thus effectively avoid substrate 3 edge because the problem generation that causes reaction condition to change of variety classes gas and vapor permeation.
Due to the second process gas 80 or 80 ' (namely, first process gas 40) thermal conductivity lower than helium, the feeder that ' heat transfer cooling effect not as the problem of helium, by providing one can increase the second process gas 80 or 80 in the present invention ' imports pressure in order to overcome the second process gas 80 or 80 improves.
Feeder of the present invention is in the embodiment of as shown in Figure 6, gases at high pressure from source of the gas are mixed to form the leading portion pipeline gas with the first pressure and export, shunt 7(gas splitter by the first gas circuit is arranged) will there is the reacting gas of the first pressure in leading portion pipeline, convert the gas that some roads have the second pressure to, the first pressure is higher than the second pressure.Wherein the reacting gas with the first pressure can be divided into central area and fringe region by shunt 7, or pole fringe region air feed respectively, and zones of different has different flows.In the back segment pipeline of the first gas circuit, the wherein road formed is had the gas of the second pressure as the first described process gas 40, imports to from top in vacuum processing chamber 1, for the process on substrate 3 surface.Back segment pipeline can be the air hole structure in gas spray also can be gas tip structure, mainly realizes the reaction chamber passing into process substrates of the gas uniform of shunt 7 rear end.The leading portion pipeline that second gas circuit is communicated to corresponding first pressure in described first gas circuit is set, thus will separate a road in the reacting gas with the first pressure as the second described process gas 80, and instead helium or part replace the refrigerating gas of helium to be transported to electrostatic chuck 2 place.
Specifically, described reacting gas can be mixed to form by several gas A ~ Z, and its composition and proportioning are all determine according to the target substance of etching, such as, be SF
6, CHF
3etc., do not enumerate herein.In order to mate the needs of etching processing, Cai its pressure is reduced to the second pressure can use as the first process gas 40.Described second process gas 80 is the reacting gas of directly drawing, and therefore its composition and proportioning and the first process gas 40 are on all four, but difference is that the first pressure that the second process gas 80 has is higher.The device (not shown) of the flow, pressure etc. of the second process gas 80 being carried out to regulating and controlling can be set in the second gas circuit, to expand its extent of supply further.The present invention also and can prevent the needs diluting fringe region reacting gas from obtaining separately a kind of cooling reactant gas source containing reacting gas according to cooling, this cooling reactant gas source selects the gas of different content in A ~ Z to mix as required, cooling reaction gas pressure and first pressure of output are close, by the fringe region of pipeline supply to electrostatic chuck.In cooling reacting gas now, the content of helium can be higher than the content of original first process gas 40, or the content of other inert gas is higher.The present invention more effectively can realize the cooling of wafer through the cooling reacting gas composition optimized.
Feeder of the present invention, in another embodiment as shown in Figure 7, will have the reacting gas of the first pressure by shunt 7 in the first gas circuit, and the process that the first process gas 40 being reduced to the second pressure is carried to vacuum processing chamber 1 is substantially identical.And by the road reacting gas that separated by the second gas circuit, the mist formed after being mixed into a small amount of diluent gas is further as the second process gas 80 ', and the first pressure that this second process gas 80 ' has is higher than the second pressure of the first process gas 40.Content shared by diluent gas is minimum, and the second process gas 80 ' remains and the first process gas 40 composition gas closely.
Described diluent gas can be inert gas, such as: helium, neon, argon gas, Krypton, xenon, nitrogen or other suitable inert gas, by the concentration of first process gas 40 at appropriate change substrate 3 edge, thus the speed of etching on flexible (accelerate or slow down) substrate 3.Or described diluent gas can also be active gases, such as, be oxygen or other suitable active gases, thus can carry out corroding and compensate the heterogeneity difference of the substrate 3 caused due to other reason.
Coordinate see the embodiment shown in Fig. 2, Fig. 3, first process gas 40 with the second pressure imports in vacuum processing chamber 1 from top, carries out processing reaction to substrate 3.The some groups of gas passages 50 offered in electrostatic chuck 2, are all used for carrying described second process gas 80 or 80 with the first pressure ', be used for cooling with replacing whole helium.Often organize gas passage 50 to be arranged in respectively with on the annulus that is the center of circle of electrostatic chuck 2 center, the annulus concentric at each group gas passage 50 place is arranged.After being transported to the end face of electrostatic chuck 2, described second process gas 80 or 80 ' just divergently blow to surrounding at the opening part of each gas passage 50, so that each position at contact substrate 3 back side realizes heat transfer cooling rapidly.
Coordinate see another embodiment shown in Fig. 4, Fig. 5, first process gas 40 with the second pressure imports in vacuum processing chamber 1 from top, carries out processing reaction to substrate 3.The gas passage offered in electrostatic chuck 2 is divided into the first passage 51 for carrying helium, with be used for the second process gas 80 or 80 of conveying first pressure ' second channel 52, some groups of first passages 51 are arranged in electrostatic chuck 2 central area 91 respectively, with on some annulus that are the center of circle of electrostatic chuck 2 center; Some groups of second channels 52 are arranged in round in the fringe region 92 of central area 91, with on the other annulus that is the center of circle of this electrostatic chuck 2 center (shown in Fig. 5 is the situation only having one group of second channel 52) respectively; The annulus at each group of second channel 52 place and the annulus concentric at each group of first passage 52 place are arranged.
Wherein, helium 60 is sent backward surrounding from the opening of first passage 51 and is dispersed so that most of position at rapid contact substrate 3 back side.Meanwhile, second channel 52 can be designed to make the second process gas 80 or 80 ' major part flows to the structure (such as slightly changing opening direction etc. of second channel 52) of substrate 3 marginal position.In addition, can also make to carry the second process gas 80 or 80 by second channel 52 ' time the first pressure be greater than pressure when carrying helium by first passage 51, adapt to improvement second process gas 80 or 80 ' effect to the heat transfer cooling of substrate 3 edge, and effectively helium and the first process gas 40 to be separated.
In sum, structure shown in each embodiment of the present invention and air supply method, in large scale electrostatic chuck, operation gas replaces or partly replaces helium as refrigerating gas, in the embodiment avoiding substrate edge gas and vapor permeation to cause reaction condition to change, by increasing to pressure during substrate edge delivery technology gas, make up the deficiency of process gas heat transfer efficiency lower than helium, guarantee the cooling effect to substrate.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (13)
1. for cooling a feeder for electrostatic chuck, described electrostatic chuck (2) is positioned at the bottom of vacuum processing chamber (1), is fixed support to the substrate (3) be placed on this electrostatic chuck (2); It is characterized in that, described feeder includes the first gas circuit and the second gas circuit;
First process gas (40) with the second pressure is transported in vacuum processing chamber (1) by described first gas circuit, carries out reaction treatment to substrate (3) surface;
Described electrostatic chuck offers some gas passages in (2); Described second gas circuit will have the second process gas (80 of the first pressure, 80 ') as refrigerating gas, at least be transported to the corresponding gas passage being arranged in electrostatic chuck (2) edge, make described second process gas (80,80 ') space between substrate (3) back side and electrostatic chuck (2) end face can be flowed into, so that carry out heat transfer cooling to substrate (3);
Wherein, described second process gas (80,80 ') only comprises the described reacting gas of the first process gas (40) composition or the mist of described reacting gas and diluent gas; The second pressure that the first pressure that described second process gas (80,80 ') has has higher than described first process gas (40).
2. feeder as claimed in claim 1, is characterized in that,
Described first gas circuit is provided with leading portion pipeline, the reacting gas with the first pressure is transported to shunt (7), forms by shunt (7) conversion described first process gas (40) that a road has the second pressure; Described first gas circuit is also provided with back segment pipeline, is transported in described vacuum processing chamber (1) by described first process gas (40);
Described second gas circuit is connected to the leading portion pipeline of described first gas circuit, so that have the gas of the first pressure as described second process gas (80) using separating a road from described reacting gas, and is transported to electrostatic chuck (2) by described second gas circuit.
3. feeder as claimed in claim 2, is characterized in that,
Be connected to described second gas circuit by collateral branch's gas circuit, in the road reacting gas via described second gas circuit conveying, be mixed into the gas after a small amount of diluent gas as described second process gas (80 ').
4. feeder as claimed in claim 3, is characterized in that,
Described diluent gas is inert gas or active gases.
5. feeder as claimed in claim 4, is characterized in that,
Described inert gas is any one or its combination in any in helium, neon, argon gas, Krypton, xenon or nitrogen.
6. feeder as claimed in claim 4, is characterized in that,
Described active gases is oxygen-containing gas.
7. feeder as claimed in claim 3, is characterized in that,
Described second gas circuit is provided with device pressure during described second process gas (80,80 ') conveying or flow being carried out further to regulating and controlling.
8. feeder as claimed in claim 3, is characterized in that,
Described electrostatic chuck (2) diameter is equal to or greater than the diameter of substrate (3);
Described electrostatic chuck (2) is provided with central area (91), and round the fringe region (92) of described central area (91); In the gas passage of described electrostatic chuck (2), comprise the some groups of first passages (51) being positioned at central area (91), and be positioned at the some groups of second channels (52) of fringe region (92);
Described second process gas (80,80 ') is delivered to the marginal position at substrate (3) back side by described second channel (52), and heat transfer cooling is carried out in the center that helium is delivered to substrate (3) back side by described first passage (51); Or described second process gas (80,80 ') all carried by described first passage (51) and second channel (52), so that carry out heat transfer cooling to the whole back side of substrate (3).
9. feeder as claimed in claim 8, is characterized in that,
Gas pressure when carrying described second process gas (80,80 ') by second channel (52), is greater than by gas pressure during first passage (51) conveying helium.
10. for cooling a feeder for electrostatic chuck, described electrostatic chuck (2) is positioned at the bottom of vacuum processing chamber (1), is fixed support to the substrate (3) be placed on this electrostatic chuck (2); It is characterized in that, described feeder includes the first gas circuit and the second gas circuit;
Described first gas circuit is provided with leading portion pipeline, the reacting gas with the first pressure is transported to shunt (7), forms first process gas (40) with the second pressure by shunt (7) conversion; Described first gas circuit is also provided with back segment pipeline, is transported in vacuum processing chamber (1), carries out reaction treatment to substrate (3) surface by described first process gas (40);
To there is second process gas (80) of the first pressure as refrigerating gas by the second gas circuit, be transported in the corresponding gas passage offered in electrostatic chuck (2), make described second process gas (80) that space between substrate (3) back side and electrostatic chuck (2) end face can be flowed into, so that carry out heat transfer cooling to substrate (3);
Described second gas circuit is connected to the leading portion pipeline of described first gas circuit, to obtain from reacting gas described in the road wherein separated; Control collateral branch's gas circuit described second gas circuit of access and carry diluent gas, making described second process gas (80 ') be the mist of described reacting gas and diluent gas; Or, control described collateral branch gas circuit and do not access described second gas circuit, make described second process gas (80) be the reacting gas only comprising the first process gas (40) composition;
Wherein, the second pressure that the first pressure that described second process gas (80,80 ') has has higher than described first process gas (40).
11. 1 kinds, for cooling the air supply method of electrostatic chuck, is characterized in that,
The reacting gas with the first pressure is converted to first process gas (40) with the second pressure in the first gas circuit, simultaneously in the second gas circuit using from there is the road gas that separates in the described reacting gas of the first pressure as the second process gas (80), or the mist of the gas separated on this road and diluent gas is as the second process gas (80 '); The second pressure that the first pressure that described second process gas (80,80 ') has has higher than described first process gas (40);
Described first process gas (40) is transported in vacuum processing chamber (1), reaction treatment is carried out to the substrate (3) be positioned on electrostatic chuck (2); By described second process gas (80,80 ') as refrigerating gas, by being positioned at the gas passage of fringe region (92) in described electrostatic chuck (2), the marginal position to substrate (3) back side is carried; Also by being positioned at the gas passage of central area (91) in this electrostatic chuck (2), the center to substrate (3) back side is carried helium or carries described second process gas (80,80 '), carries out heat transfer cooling to substrate (3).
12. air supply methods as claimed in claim 11, is characterized in that,
By being mixed into a small amount of inert gas or active gases forms described second process gas (80 ') in the road reacting gas to described second gas circuit conveying.
13. air supply methods as described in claim 11 or 12, is characterized in that,
Carrying described second process gas (80,80 ') to carry out the gas pressure conducted heat when cooling, being greater than by carrying helium to carry out the gas pressure conducted heat when cooling.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110459493A (en) * | 2019-08-21 | 2019-11-15 | 北京北方华创微电子装备有限公司 | Vacuumize chamber and vacuum pumping method |
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| CN102741998A (en) * | 2010-01-29 | 2012-10-17 | 住友大阪水泥股份有限公司 | Electrostatic chuck apparatus |
| CN103107119A (en) * | 2011-11-09 | 2013-05-15 | 东京毅力科创株式会社 | Substrate cooling system, substrate processing apparatus, electrostatic chuck and substrate cooling method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110459493A (en) * | 2019-08-21 | 2019-11-15 | 北京北方华创微电子装备有限公司 | Vacuumize chamber and vacuum pumping method |
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