JP2012521093A - Vapor deposition reactor system and method - Google Patents

Vapor deposition reactor system and method Download PDF

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Publication number
JP2012521093A
JP2012521093A JP2012500902A JP2012500902A JP2012521093A JP 2012521093 A JP2012521093 A JP 2012521093A JP 2012500902 A JP2012500902 A JP 2012500902A JP 2012500902 A JP2012500902 A JP 2012500902A JP 2012521093 A JP2012521093 A JP 2012521093A
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Prior art keywords
assembly
reactor
disposed
wafer carrier
showerhead
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Japanese (ja)
Inventor
ソラブジ,クルシード
ハマムジィ,ロジャー
ヒー,ゲング
ヒガシ,グレッグ
ヘジェダス,アンドレアス
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アルタ デバイセズ,インコーポレイテッドAlta Devices,Inc.
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Priority to US61/160,703 priority Critical
Priority to US16069409P priority
Priority to US16070109P priority
Priority to US16069009P priority
Priority to US16069909P priority
Priority to US16069609P priority
Priority to US16070309P priority
Priority to US16070009P priority
Priority to US61/160,700 priority
Priority to US61/160,694 priority
Priority to US61/160,696 priority
Priority to US61/160,701 priority
Priority to US61/160,699 priority
Priority to US61/160,690 priority
Application filed by アルタ デバイセズ,インコーポレイテッドAlta Devices,Inc. filed Critical アルタ デバイセズ,インコーポレイテッドAlta Devices,Inc.
Priority to PCT/US2010/027538 priority patent/WO2010107835A2/en
Publication of JP2012521093A publication Critical patent/JP2012521093A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411Cooling of the reaction chamber walls
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519Inert gas curtains
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/4557Heated nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating

Abstract

Embodiments of the present invention generally relate to an apparatus and method for a chemical vapor deposition (CVD) process. In one embodiment, the CVD reactor is disposed on the reactor body and linearly disposed on the lid support, the reactor lid assembly including the first showerhead assembly and the isolator. An assembly, a second showerhead assembly, and an exhaust assembly. The CVD reactor further includes first and second faceplates disposed at both ends of the reactor body, the first showerhead assembly being disposed between the first faceplate and the isolator assembly, and exhaust. An assembly is disposed between the second showerhead assembly and the second faceplate. The reactor body includes a wafer carrier on the wafer carrier track, a lamp assembly including a plurality of lamps disposed below the wafer carrier track and usable to heat the wafer disposed on the wafer carrier; have.
[Selection] Figure 1A

Description

  Embodiments of the present invention generally relate to an apparatus and method for vapor deposition, and more particularly to chemical vapor deposition systems, reactors, and processes thereof.

  Solar cells, solar cell devices, semiconductor devices, or other electronic devices are typically manufactured using various manufacturing processes for manipulating the surface of a substrate. These manufacturing processes may include deposition, heat treatment, etching, doping, oxidation, nitridation, and many other processes. Epitaxial lift-off (ELO) is a less common technique for manufacturing thin film devices and materials where a layer of material is deposited on the growth substrate and then removed from the growth substrate. The epitaxial layer, film, or material is grown or deposited on a sacrificial layer that is deposited on a growth substrate, such as a gallium arsenide wafer, by a chemical vapor deposition (CVD) process or a metal organic CVD (MOCVD) process. The sacrificial layer is then selectively etched away with a wet acid bath while the epitaxial material is separated from the growth substrate during the ELO etching process. The isolated epitaxial material may be a thin layer or film, commonly referred to as an ELO film or epitaxial film. Each epitaxial film typically includes a number of layers that vary in composition relative to a particular device, such as a photovoltaic power generation, a photovoltaic power generation device, a semiconductor device, or other electronic equipment.

  A CVD process involves growing or depositing an epitaxial film by reaction of a gas phase chemical precursor. During the MOCVD process, at least one of the chemical precursors is a metal-organic compound, that is, a compound having at least one ligand that includes metal atoms and organic fragments.

  There are many types of CVD reactors for very different applications. For example, CVD reactors include not only plasma enhanced reactors, but also single or bulk wafer reactors, atmospheric and low pressure reactors, ambient and high temperature reactors. These unambiguous designs solve various challenges that arise during the CVD process, such as depletion effects, contamination problems, reactor maintenance, throughput, and production costs.

  Thus, there is a need for CVD processes, reactors and processes to grow epitaxial thin films and materials on substrates more efficiently with less contamination, higher throughput and lower cost than currently known CVD equipment and processes. is there.

  Embodiments of the present invention generally relate to an apparatus and method for a chemical vapor deposition (CVD) process. In one embodiment, a CVD reactor is provided including a reactor lid assembly disposed on the reactor body. In one example, the reactor lid assembly includes a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly disposed in series and adjacent to the lid support. The reactor body includes a lamp assembly having a wafer carrier disposed on the wafer carrier track and a plurality of lamps on the wafer carrier disposed under the wafer carrier track. In one example, the lamp assembly includes a reflector positioned below the plurality of lamps and below the wafer carrier track. In another example, the reactor body includes a floating wafer carrier disposed in a floating wafer carrier track, and a lamp assembly having a plurality of lamps and disposed under the wafer carrier track.

  In many embodiments, the first or second showerhead assembly further includes a body having an upper portion and a lower portion, and an inner surface of the body, parallel to a central axis extending through the body, A central channel. The first or second showerhead assembly further includes a first plurality of holes, an optional diffuser plate disposed within the central channel, and a second plurality of holes, the optional diffuser plate An upper tube plate disposed in the lower central channel, a lower tube plate having a third plurality of holes and disposed in the central channel below the upper tube plate, and a lower side from the upper tube plate A plurality of tubes extending to the tube plate, wherein each tube is coupled to an individual hole from the second plurality of holes and to an individual hole from the third plurality of holes and in fluid communication state It has become.

  In another example, the reactor lid assembly includes a first faceplate disposed at one end of the reactor body, and the first showerhead assembly includes the first faceplate and isolator assembly, and the reactor body. Between the second faceplate and the second faceplate, and the exhaust assembly is disposed between the second showerhead assembly and the second faceplate.

  In another example, the reactor body includes a wafer carrier disposed on the wafer carrier track, a lamp assembly including a plurality of lamps disposed below the wafer carrier track, and a temperature control system. Yes. A temperature regulation system extends across the reactor lid and includes a first fluid path including a first outlet connected to the first fluid path by fluid communication with the first inlet and the body of the reactor A second fluid path that extends generally and includes a second inlet and a second outlet coupled to the second fluid path in fluid communication.

  In another embodiment, a chemical vapor deposition (CVD) reactor is provided that includes a reactor lid assembly disposed on a reactor body, the reactor lid assemblies being disposed next to each other on a lid support. First showerhead assembly and isolator assembly, and a second showerhead assembly and exhaust assembly disposed next to each other on the lid support portion, wherein the isolator assembly includes first and second showerheads. A second showerhead assembly is disposed between the isolator assembly and the exhaust assembly.

  In one example, a CVD reactor is provided that includes a reactor lid assembly disposed on a reactor body, wherein the reactor lid assemblies are disposed next to each other on a lid support portion. A first container having an assembly and an isolator assembly; and a second container having a second showerhead assembly and an exhaust assembly disposed next to each other on the lid assembly.

  In another example, a CVD reactor is provided that includes a reactor lid assembly disposed on a reactor body, the reactor lid assembly being disposed linearly next to each other on a lid support in succession. Aligned first showerhead assembly, isolator assembly, second showerhead assembly and exhaust assembly, wherein the isolator assembly is disposed between the first and second showerhead assemblies and the second showerhead An assembly is disposed between the isolator assembly and the exhaust assembly.

  In another example, the CVD reactor includes at least one fluid path extending through the lid support, and at least one inlet and at least one outlet coupled in fluid communication with the fluid path.

  In some examples, the first showerhead assembly is a modular showerhead assembly, the second showerhead assembly is a modular showerhead assembly, the isolator assembly is a modular isolator assembly, and an exhaust The assembly may be a modular exhaust assembly.

  In other embodiments described herein, the deposition includes heating at least one wafer disposed on the wafer carrier at a predetermined temperature by exposing a lower surface of the wafer carrier track to radiation emitted from the lamp assembly. A method is provided for processing a wafer in a reactor and a wafer carrier is disposed on a wafer carrier track in a deposition reactor. The method further includes passing through the first chamber having a first showerhead assembly and an isolator assembly, across the wafer carrier along the wafer carrier track, and depositing the first material during the first showerhead. Exposing the wafer to a first mixture of gaseous precursors flowing from, exposing the wafer to a process gas (eg, arsine gas) flowing from an isolator assembly, and through a second chamber having a second head assembly and an exhaust assembly. Across the wafer carrier along the wafer carrier track and exposing the wafer to a second mixture of gaseous precursors flowing from the second showerhead during deposition of the second material and from the deposition reactor through the exhaust assembly. Removing the gas. In some examples, the predetermined temperature is in the range of about 250 ° C. to about 350 ° C., preferably about 275 ° C. to about 325 ° C., preferably 290 ° C. to about 310 ° C., for example about 300 ° C.

  In another example, a method for processing a wafer in a deposition reactor is provided, the method comprising: a plurality of holes disposed in a top surface of a wafer carrier track in the deposition reactor and the wafer carrier track being Levitation of the wafer carrier from the wafer carrier track by flowing a levitation gas through the cavity and exposing the lower surface of the wafer carrier to the levitation gas flowing from the holes, the upper surface of the wafer carrier comprising at least one wafer, preferably a plurality of Of wafers. The method further heats the wafer and wafer carrier to a predetermined temperature by exposing the lower surface of the wafer carrier track to radiation emitted from the lamp assembly and along the wafer carrier track through at least two chambers. Crossing the wafer carrier, wherein the first chamber includes a first showerhead assembly and isolator assembly, and the second chamber includes a second showerhead assembly and an exhaust assembly.

  In another embodiment, a method for processing a wafer in a vapor deposition reactor is provided, the method using a floating gas flowing from a plurality of holes disposed in an upper surface of a wafer carrier track in the vapor deposition reactor. Exposing the lower surface of the wafer carrier to expose the lower surface of the wafer carrier track of radiation emitted from the lamp assembly, wherein the upper surface of the wafer carrier has at least one wafer by exposing the lower surface of the wafer carrier; To heat the wafer and wafer carrier to a predetermined temperature. The method further includes a first precursor (flowing from the first showerhead) through the first chamber having the first showerhead assembly and the isolator assembly, across the wafer carrier along the wafer carrier track. For example, a process gas (e.g., exposing a wafer to a gallium precursor or other group III precursor) and a second precursor (e.g., an arsenic precursor or other group V precursor) and flowing from the isolator assembly Gaseous precursor that flows from the second showerhead across the wafer carrier along a wafer carrier track through a second chamber having a second showerhead assembly and an exhaust assembly. The wafer is exposed to a mixture of gases from the deposition reactor through the exhaust assembly. Including the step of removing.

  The process gas can include arsine, argon, helium, nitrogen, hydrogen, or mixtures thereof. In one example, the process gas includes an arsenic precursor such as arsine. In other embodiments, the first precursor can include an aluminum precursor, a gallium precursor, an indium precursor, or a combination thereof, and the second precursor is a nitrogen precursor, Phosphorus precursors, arsenic precursors, antimony precursors, or mixtures thereof may be included.

  In another example, a method is provided for processing a wafer in a deposition reactor, the method comprising exposing a lower surface of a wafer carrier track to radiation emitted from a lamp assembly, thereby exposing the wafer carrier onto the wafer carrier. The reactor lid of the deposition reactor is heated to heat at least one wafer disposed and the wafer carrier is placed on a wafer carrier track in the deposition reactor to maintain the reactor lid assembly at a predetermined temperature. Flowing liquid through a path extending through the entire assembly, the liquid and path including fluid communication with a temperature control system.

  In another embodiment, a method is provided for processing a wafer in a deposition reactor, the method comprising exposing a lower surface of the wafer carrier track to radiation emitted from a lamp assembly, thereby exposing the wafer carrier on the wafer carrier. Heating the at least one wafer disposed in the wafer reactor, the wafer carrier being disposed on a wafer carrier track in the deposition reactor, and maintaining the reactor lid assembly at a predetermined temperature for the reactor of the deposition reactor A liquid is flowed through a path extending through the entire lid assembly, the liquid and the path being in fluid communication with the temperature control system, traversing the wafer carrier along the wafer carrier track through at least two chambers, the first chamber Includes a first showerhead assembly and an isolator assembly; Server comprises a second showerhead assembly and isolator assembly, removing gas from the deposition reactor through the exhaust assembly includes the step.

It is therefore possible to understand in detail how to enumerate the features of the invention described above, and to give a more specific description of the invention briefly summarized as described above, some of which are described in the accompanying drawings. It can be obtained by referring to the form. The accompanying drawings, however, merely illustrate exemplary embodiments of the invention and are not to be construed as limiting the scope thereof as the invention may allow other equally effective embodiments. It should be noted.
1A-1E illustrate a CVD reactor according to embodiments described herein. FIG. 1F shows a CVD reactor coupled to a temperature control system according to other embodiments described herein. 2A-2C illustrate a reactor lid assembly according to embodiments described herein. FIG. 2D shows the lid support of the reactor according to the embodiments described herein. FIG. 3 shows a body assembly of a reactor according to the embodiments described herein. 4A-4E illustrate a wafer carrier track according to embodiments described herein. 5A-5D illustrate an isolator assembly according to embodiments described herein. FIG. 6 illustrates a heating lamp assembly according to embodiments described herein. 7A-7D illustrate a showerhead assembly according to embodiments described herein. 8A-8D illustrate an exhaust assembly according to embodiments described herein. 9A-9F illustrate a CVD system that includes a multiple CVD reactor according to embodiments described herein. 10A-10B show a lamp according to embodiments described herein. 11A-11F illustrate a plurality of lamps according to other embodiments described herein. 12A-12B illustrate a floating substrate carrier according to another embodiment described herein. FIGS. 12C-12E illustrate another floating substrate carrier according to another embodiment described herein.

  Embodiments of the present invention generally relate to an apparatus and method for chemical vapor deposition (CVD), such as a metal-organic CVD (MOCVD) process. As described herein, embodiments of the present invention are described as they relate to an atmospheric pressure CVD reactor and an organo-metal precursor gas. However, it should be noted that aspects of the present invention are not limited to use with atmospheric pressure CVD reactors or metal-organic precursor gases, but are applicable to other types of reactor systems and precursor gases. That. For a better understanding of the novelty of the device of the invention and its method of use, reference is made to the accompanying drawings in the following description.

  According to one embodiment of the present invention, an atmospheric pressure CVD reactor is provided. A CVD reactor is used to provide a plurality of epitaxial layers on a substrate such as a gallium arsenide substrate. These epitaxial layers can include aluminum gallium arsenide, gallium arsenide, and phosphogallium arsenide. These epitaxial layers are grown on a gallium arsenide substrate for later removal, and the substrate can be reused to produce additional material. In one embodiment, a CVD reactor may be used to provide a solar cell. These solar cells can further include single junctions, heterojunctions, or other configurations. In one embodiment, the CVD reactor may be configured to develop a 2.5 watt wafer at 10 centimeters with a 10 centimeter substrate. In one embodiment, the CVD reactor can provide a throughput of about 1 substrate per minute to about 10 substrates per minute.

  1A-1E illustrate a reactor 100, a CVD reactor or chamber as described in the embodiments described herein. The reactor 100 includes a reactor lid assembly 200 disposed on the reactor body assembly 102. The reactor lid assembly 200 and its components are further illustrated in FIGS. 2A-2D, and the reactor body assembly 102 is further illustrated in FIG.

  The reactor lid assembly 200 includes an injector or isolator, an isolator assembly 500 disposed between the two showerhead assemblies, and a showerhead building 700. The reactor lid assembly 200 also includes an exhaust assembly 800. FIG. 1C shows a reactor 100 that includes two deposition stations, such as chamber stations 160, 162. Chamber station 160 includes showerhead assembly 700 and isolator assembly 500, while chamber station 162 includes showerhead assembly 700 and exhaust assembly 800. In one embodiment, the isolator assembly 500 can be used to flow gas to separate both showerhead assemblies 700 from one another, while the exhaust assembly 800 is from another reactor connected to the faceplate 112. Used to isolate the internal environment of the reactor 100.

  In many embodiments described herein, each of the showerhead assemblies 700 can be a modular showerhead assembly, each of the isolator assemblies 500 can be a modular isolator assembly, and the exhaust assembly 800. Each may be a modular exhaust assembly. Any of the showerhead assembly 700, isolator assembly 500, and / or exhaust assembly 800 may be removed from the reactor lid assembly 200 and replaced with the same or different assembly as desired for specific process conditions. May be. The modular assembly of the showerhead assembly 700, isolator assembly 500, and / or exhaust assembly 800 can each be configured to be positioned within a CVD reactor system.

  In another embodiment described herein, other configurations of the reactor 100 are provided that are not shown in the drawings. In one embodiment, the reactor lid assembly 200 of the reactor 100 includes three exhaust assemblies 800 separated by two showerhead assemblies 700, so that the reactor lid assembly 200 is sequentially A first exhaust assembly, a first showerhead assembly, a second exhaust assembly, a second showerhead assembly, and a third exhaust assembly are included. In another embodiment, the reactor lid assembly 200 of the reactor 100 includes three isolator assemblies 500 separated by two showerhead assemblies 700, so that the reactor lid assembly 200 is One isolator assembly, a first showerhead assembly, a second isolator assembly, a second showerhead assembly, and a third isolator assembly.

  In another embodiment, the reactor lid assembly 200 of the reactor 100 includes two isolator assemblies 500 and one exhaust assembly 800 separated by two shower assemblies 700, such that the reactor lid assembly 200. Sequentially includes a first isolator assembly, a first showerhead assembly, a second isolator assembly, a second showerhead assembly, and a first exhaust assembly. In another example, the reactor lid assembly 200 sequentially includes a first isolator assembly, a first showerhead assembly, a first exhaust assembly, a second showerhead assembly, and a second isolator assembly. . In another example, the reactor lid assembly 200 includes, in sequence, a first exhaust assembly, a first showerhead assembly, a first isolator assembly, a second showerhead assembly, and a third isolator assembly. .

  In another embodiment, the reactor lid assembly 200 of the reactor 100 includes two exhaust assemblies 800 and one isolator assembly 700 separated by two shower assemblies 700, such that the reactor lid assembly 200. Sequentially includes a first exhaust assembly, a first showerhead assembly, a second exhaust assembly, a second showerhead assembly, and a first exhaust assembly. In another example, the reactor lid assembly 200 includes, in sequence, a first exhaust assembly, a first showerhead assembly, a first isolator assembly, a second showerhead assembly, and a second exhaust assembly. . In another example, the reactor lid assembly 200, in turn, includes a first isolator assembly, a first showerhead assembly, a first exhaust assembly, a second showerhead assembly, and a second exhaust assembly. .

  The reactor body assembly 102 includes a faceplate 110 at one end and a faceplate 112 at the opposite end. Faceplates 110 and 112 may be used to connect to additional reactors that are similar to or different from reactor 100, or to connect to an end cap, end plate, wafer / substrate handler, or another device, respectively. Is done. In one example, the face plate 110 of the reactor 100 can be coupled to the face plate 112 of another reactor (not shown). Similarly, the face plate 112 of the reactor 100 can be coupled to the face plate 110 of another reactor (not shown). A seal, spacer, or O-ring may be placed between the two bonded faceplates. In one embodiment, the seal may include a metal such as nickel or a nickel alloy. In one example, the seal is a knife edge metal seal. In another embodiment, the seal comprises a polymer or elastomer, such as KALREZ® elastomer available from DuPont Performance Elastomer Company. In another embodiment, the seal is a helix seal or an H seal. The seal or O-ring forms an airtight seal to prevent or greatly reduce the ingress of ambient gas into the reactor 100. The reactor 100 can be maintained during use or manufacture with little or no oxygen, water, or carbon dioxide. In one embodiment, the reactors 100 each have about 100 ppb (parts per billion) or less, preferably about 10 ppb or less, more preferably about 1 ppb or less, more preferably about 100 ppt (parts per trillion) or less oxygen. Maintained at concentration, moisture concentration, and / or carbon dioxide concentration.

  Sides 120 and 130 extend along the length of the reactor body assembly 102. Side 120 has an upper surface 128 and side 130 has an upper surface 138. Upper surfaces 114 and 116 of reactor body assembly 102 extend between upper surfaces 128 and 138. The top surface 114 is parallel to the faceplate 110 just inside the reactor body assembly 102 and the top surface 116 is parallel to the faceplate 112 just inside the reactor body assembly 102. The gas inlet 123 is connected to the side surface 120 and extends from the side surface 120. Floating gas or carrier gas can be administered into the reactor 100 through the gas inlet 123. The levitation gas or carrier gas can include nitrogen, helium, argon, hydrogen, or mixtures thereof.

  FIG. 1F illustrates a reactor 100 that includes a reactor body assembly 102 and a reactor lid assembly 200 coupled to a temperature regulation system 190 in accordance with one embodiment described herein. Temperature control system 190 is shown in FIG. 1F as having three heat exchangers 180a, 180b, and 180c. However, the temperature control system 190 can have 1, 2, 3, 4, 5, or more heat exchangers that are in fluid communication with and coupled to various portions of the reactor 100. Each of the heat exchangers 180a, 180b, or 180c can include at least one liquid supply path 182 and at least one liquid return path 184. Each liquid return path 184 can be connected in fluid communication with the outlet of the reactor 100 by a conduit 186, while each liquid supply path 182 is connected in fluid communication with the inlet of the reactor 100 by a conduit 186. Also good. The conduit 186 can include pipes, tubes, hoses, other hollow wires, or combinations thereof. A valve 188 can be used on each conduit 186 between the liquid supply path 182 and the inlet or between the liquid return path 184 and the outlet.

  The reactor body assembly 102 is coupled and in fluid communication with at least one heat exchanger as part of a thermal conditioning system. In some embodiments, the reactor body assembly 102 may be in fluid communication with and coupled to two, three, or more heat exchangers. FIG. 1B shows an inlet 118a and an outlet 118b in fluid communication with and coupling to the lower portion 104 of the reactor 100 and the thermal conditioning system.

  In one embodiment, the inlets 122 a, 122 b and 122 c and the outlets 126 a, 126 b and 126 c are connected to the side surface 120 and extend from the side surface 120. At least one heat exchanger is in fluid communication with and coupled to the inlets 122a, 122b and 122c and the outlets 126a, 126b and 126c. Outlets 126a, 126b and 126c send liquid back to the heat exchanger, while inlets 122a, 122b and 122c receive liquid from the heat exchanger. In one embodiment, each inlet 122a, 122b or 122c is positioned and positioned lower than the respective outlet 126a, 126b and 126c so that the flowing liquid from each inlet 122a, 122b or 122c is , Flows upward to the respective outlets 126a, 126b or 126c via the respective connection paths.

  In another embodiment, the inlets 132a, 132b and 132c and the outlets 136a, 136b and 136c are connected to and extend from the side surface 130. At least one heat exchanger is in fluid communication with and coupled to the inlets 132a, 132b and 132c and the outlets 136a, 136b and 136c. Outlets 136a, 136b, and 136c send liquid back to the heat exchanger, while inlets 132a, 132b, and 132c receive liquid from the heat exchanger.

  1C-1D show the reactor body assembly 102 including fluid pathways 124a, 124b, 124c, 134a, 134b and 134c. In one example, the fluid path 124a extends within the side 120 and along a partial length of the reactor body assembly 102. The fluid path 124a is connected to the inlet 122a and the outlet 126a for fluid communication. The fluid path 134a also extends within the side 130 along the partial length of the reactor body assembly 102. The fluid path 134a is connected to the inlet 132a and the outlet 136a for fluid communication.

  In another example, the fluid path 124b extends within the reactor body assembly 102 and within the protrusion or bracket arm 146 along a partial length of the reactor body assembly 102. The fluid path 124b is connected to and communicates with the inlet 122b and the outlet 126b. The fluid path 134b also extends within the reactor body assembly 102 and within the protrusion or bracket arm 146 along a partial length of the reactor body assembly 102. The fluid path 134b is connected to the inlet 132b and the outlet 136b for fluid communication.

  In another example, the fluid pathway 124c extends from the side surface 120 to the side surface 130 through the width of the reactor body assembly 102. The fluid path 124c is in fluid communication with and connected to the inlet 122c and the outlet 132c. The fluid path 124c extends from the side surface 130 to the side surface 130 through the width of the main assembly 102 of the reactor. The fluid path 124c is connected to the inlet 126c and the outlet 136c for fluid communication.

  In another embodiment, the reactor body assembly 102 includes a wafer carrier track 400 and a heating lamp assembly 600 disposed therein. The heating lamp system is used to heat the wafer 90 placed in or on the wafer carrier track 400, the wafer carrier, and the reactor 100. Wafer carrier track 400 is on a protrusion such as bracket arm 146. In general, the wafer carrier track 400 is disposed between the bracket arm 146 and the clamp arm 148. Bracket arm 146 includes fluid pathways 124b and 134b traversing it.

  In one embodiment, a spacer such as a gasket or O-ring is disposed between the lower surface of the wafer carrier track 400 and the upper surface of the bracket arm 146. Further, another spacer such as a gasket and an O-ring is disposed between the upper surface of the wafer carrier track 400 and the lower surface of the clamp arm 148. The spacer is used to form a space or gap around the wafer carrier track 400 that helps thermal management of the wafer carrier track 400. In one example, the upper surface of the bracket arm 146 has a groove for receiving the spacer. Similarly, the lower surface of the clamp arm 148 has a groove for accommodating the spacer.

  2A-2C illustrate a reactor lid assembly 200 according to another embodiment described herein. The reactor lid assembly 200 includes a showerhead assembly 700 and an isolator assembly 500 (chamber station 160) and an exhaust assembly 800 (chamber station 162) disposed on the showerhead assembly 700 and lid support 210. FIG. 2D shows a lid support 210 included within the reactor lid assembly 200 as described in one embodiment. The lid support 210 has a lower surface 208 and an upper surface 212. The flange 220 extends outward from the lid support 210 and has a lower surface 222. When disposed on the reactor body assembly 102, the flange 220 may support the reactor lid assembly 200. The lower surface 222 of the flange 220 is in physical contact with the upper surfaces 114, 116, 128 and 138 of the reactor body assembly 102.

  In one embodiment, the showerhead assembly 700 is disposed in the showerhead ports 230 and 250 of the lid support 210, the isolator assembly 500 is disposed in the isolator port 240 of the lid support 210, and the exhaust assembly 800 is disposed in the lid support 210. 21 exhaust ports 260. The shape of the gas or exhaust assembly generally matches the shape of the respective port. Each showerhead assembly 700 and showerhead ports 230 and 250 may each have a rectangular or square shape. The process path—such as the path through which the floating wafer carrier 480 moves forward along the wafer carrier track 400 during the manufacturing steps—like the wafer carrier track 400, extends along the length of the lid support 210.

  Shower head port 230 has a length 232 and a width 234, and shower head port 250 has a length 252 and a width 254. The isolator assembly 500 and the isolator port 240 can each have a rectangular or square shape. The isolator port 240 has a length 242 and a width 244. The exhaust assembly 800 and the exhaust port 260 can each have a rectangular or square shape. The exhaust port 260 has a length 262 and a width 264.

  The process path extends along the length 232 of the showerhead port 230 and the first showerhead assembly therein, and extends along the length 242 of the isolator port 240 and the isolator assembly therein, and the showerhead port 250 and It extends along the length 252 of the second showerhead assembly therein, and extends along the length 262 of the exhaust port 260 and the exhaust assembly therein. The process path also includes the showerhead port 250 and the first showerhead assembly width 234 therein, the isolator port 240 and the isolator assembly width 244 therein, and the showerhead port 250 and the first therein. The two showerhead assembly widths 254 extend perpendicularly or substantially perpendicularly to the exhaust port 260 and the exhaust assembly width 264 therein, respectively.

  In some examples, the first showerhead assembly 700, the isolator assembly 500, the second showerhead assembly 700, and the exhaust assembly 800 are connected to each other in a process path that extends along the length of the lid support. Are arranged along. Similar to the exhaust assembly 800, the isolator assembly 500 has a width that is substantially the same as or greater than the width of the process path. Also, isolator assembly 500 or exhaust assembly 800 each have a width that is substantially the same as or greater than the width of first and second showerhead assemblies 700.

  In one embodiment, each showerhead assembly 700 has a square shape, and isolator assembly 500 and exhaust assembly 800 have a square shape. In one example, the width 244 of isolator port 240 and the width of isolator assembly 500 can extend across the width of the interior of the chamber. In another example, the width 264 of the exhaust port 260 and the width of the exhaust assembly 800 can extend across the interior width of the chamber.

  In some embodiments, the width 234 of the showerhead port 230, the width 254 of the showerhead port 250, and the width of each showerhead assembly 700 are each about 3 inches to about 9 inches, preferably about 5 inches to Within a range of about 7 inches, for example about 6 inches. Also, the length 232 of the showerhead port 230, the length 252 of the showerhead port 250, and the length of each showerhead assembly 700 are about 3 inches to about 9 inches, preferably about 5 inches to about 7 respectively. Within an inch range, for example, about 6 inches.

  In other embodiments, the width 244 of the isolator port 240 and the width of the isolator assembly 500 are each about 3 inches to about 12 inches, preferably about 4 inches to about 8 inches, more preferably about 5 inches to about 6 inches. Is within the range. Also, the length 242 of the isolator port 240 and the length of the isolator assembly 500 are each about 0.5 inches to about 5 inches, preferably about 1 inch to about 4 inches, and more preferably about 1.5 inches to Within about 2 inches.

  In other embodiments, the width 264 of the exhaust port 260 and the width of the exhaust assembly 800 are each about 3 inches to about 12 inches, preferably about 4 inches to about 8 inches, more preferably about 5 inches to about 6 inches. Is within the range. Also, the length 262 of the exhaust port 260 and the length of the exhaust assembly 800 are each about 0.5 inches to about 5 inches, preferably about 1 inch to about 4 inches, and more preferably about 1.5 inches to about 5 inches. Within 2 inches.

  The reactor lid assembly 200 may be in fluid communication with and coupled to at least one heat exchanger as part of a thermal conditioning system. In some embodiments, the reactor lid assembly 200 may be in fluid communication with and coupled to two, three or more heat exchangers.

  The thermal control system 190 (FIG. 1F) of the reactor lid assembly 200 includes inlets 214a, 216a and 218a and outlets 214b, 216b and 218b, as shown in FIG. 2A. Each pair of inlet and outlet is in fluid communication with a path extending through the reactor lid assembly 200. Outlets 214b, 216b, and 218b send liquid back to a heat exchanger, such as heat exchangers 180a-180c, while inlets 214a, 216a, and 218a can receive liquid from the heat exchanger. In some embodiments, the temperature control system 190 is at a temperature in the range of about 250 ° C. to about 350 ° C., preferably about 275 ° C. to 325 ° C., more preferably about 290 ° C. to 310 ° C., such as about 300 ° C. The heat exchangers 180a-180c are utilized to maintain the reactor body assembly 102 and / or the reactor lid assembly 200, respectively.

  2B-2C show fluid paths 224, 226 and 228. The fluid path 224 is disposed between the inlet 214a and the outlet 214b that are connected to and in fluid communication with the heat exchanger. The fluid path 224 is disposed between the showerhead assembly 700 and the exhaust assembly 800. In addition, the fluid path 226 is disposed between the inlet 216a and the outlet 216b, and the fluid path 228 is disposed between the inlet 218a and the outlet 218b, each connected to a heat exchanger and in fluid communication. The fluid path 226 is disposed between the showerhead assembly 700 and the isolator assembly 500, and the fluid path 228 is disposed between the showerhead assembly 700 and the isolator assembly 500.

  The fluid path 224 is partially formed between the groove 213 and the plate 223. Similarly, fluid path 226 is partially formed between groove 215 and plate 225, and fluid path 228 is partially formed between groove 217 and plate 227. Grooves 213, 215 and 217 can be formed in the lower surface 208 of the lid support 210. FIG. 2D shows plates 223, 225, and 227 that cover grooves 213, 215, and 217, respectively.

  In one embodiment, a first showerhead assembly 700 and an isolator assembly 500 disposed adjacent to the lid support 210 and a second showerhead assembly 700 and an exhaust assembly 800 disposed adjacent to the lid support 210 are provided. A deposition reactor lid assembly 200 is provided, wherein the isolator assembly 500 is disposed between the first and second showerhead assemblies 700, and the second showerhead assembly 700 includes the isolator assembly 500 and the exhaust assembly. 800.

  In another embodiment, a chamber station 160 having a first showerhead assembly 700 and an isolator assembly 500 located next to each other on the lid support 210 and a second showerhead assembly located next to the lid support 210. And a deposition reactor lid assembly 200 including a chamber station 162 having an exhaust assembly 800 and an isolator assembly 500 disposed between the first and second showerhead assemblies 700 to provide a second shower. The head assembly 700 is disposed between the isolator assembly 500 and the exhaust assembly 800.

  In another embodiment, the deposition includes a first showerhead assembly 700, an isolator assembly 500, a second showerhead assembly 700, and an exhaust assembly 800 that are arranged in series and adjacent to the lid support 210. The reactor lid assembly 200 is provided, the isolator assembly 500 is disposed between the first and second showerhead assemblies 700, and the second showerhead assembly 700 is between the isolator assembly 500 and the exhaust assembly 800. Placed in.

  In another embodiment, the deposition includes a first showerhead assembly 700, an isolator assembly 500, a second showerhead assembly 700, and an exhaust assembly 800 that are arranged in series and adjacent to the lid support 210. Reactor lid assembly 200 is provided, and temperature control system 190 may be 2, 3 or 2, such as at least one liquid or liquid path, often liquid paths 224, 226 and 228 extending throughout lid support 210. It has more liquid or liquid pathways. The temperature regulation system 190 further includes at least one inlet, such as inlets 214a, 216a, and 218a, and at least one, such as outlets 214b, 216b, and 218b, in fluid communication with and coupled to the fluid paths 224, 226, and 228. And two outlets. Each of the inlets 214a, 216a and 218a and the outlets 214b, 216b and 218b are in fluid communication with and coupled to a plurality of heat exchangers, such as liquid reservoirs, heat exchangers or heat exchangers 180a, 180b and 180c, respectively. The In one example, the liquid reservoir can include source water, alcohol, glycol, glycol ether, organic solvent, or a mixture thereof.

  In one example, the first showerhead assembly 700 is disposed between two independent fluid paths of a temperature control system 190 that extends through the reactor lid assembly 200. In another example, the second showerhead assembly 700 is positioned between two independent fluid pathways of the temperature control system 190 that extends through the reactor lid assembly 200. In another example, isolator assembly 500 is disposed between two independent fluid paths of temperature control system 190 that extend through reactor lid assembly 200. In another example, the exhaust assembly 800 is positioned between two independent fluid paths of a temperature control system 190 that extends through the reactor lid assembly 200.

  In another embodiment, a chamber station 160 having a first showerhead assembly 700 and an isolator assembly 500 disposed adjacent to the lid support 210 and a second disposed adjacent to the lid support 210. A deposition reactor lid assembly 200 is provided that includes a chamber station 162 having a showerhead assembly 700 and an exhaust assembly 800, and the isolator assembly 500 includes second and second showerhead assemblies 700, a temperature control system 190, and the like. It is arranged between.

  In one embodiment, the first showerhead assembly 700, the isolator assembly 500, the second showerhead assembly 700, and the exhaust assembly 800 are disposed next to each other along the length of the lid support 210. In some embodiments, the isolator assembly 500 can have a longer width than the first or second showerhead assembly 700. In other embodiments, the isolator assembly 500 can have a shorter length than the first or second showerhead assembly 700. In some embodiments, the exhaust assembly 800 can have a longer width than the first or second showerhead assembly 700. In other embodiments, the exhaust assembly 800 can have a shorter length than the first or second showerhead assembly 700.

  In some examples, first showerhead assembly 700, isolator assembly 500, second showerhead assembly 700, and exhaust assembly 800 each have a rectangular shape. In another example, the first showerhead assembly 700 and the second showerhead assembly 700 have a square shape. The lid support 210 includes or is made of a material such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof.

  Embodiments include a body 502 or 702 in which each of the isolator assembly 500 or the first or second showerhead assembly 700 includes an upper portion 506 or 706 disposed in the lower portion 504 or 704, respectively, and the inner surface of the body 502 or 702 A central channel 516 or 716 extending between an upper portion 506 or 706 and a lower portion 504 or 704 and parallel to a central axis 501 or 701 extending through the body 502 or 702, between An additional diffuser plate 530 or 730 having a plurality of holes 532 or 732 and disposed within the central channel 516 or 716. The isolator assembly 500 or the first or second showerhead assembly 700 has a second plurality of holes 542 or 742, respectively, within the central channel 516 or 716 and optionally under the diffusion plate 530 or 730. An upper tube plate 540 or 740 and a lower side disposed within the central channel 516 or 716 and below the upper tube plate 540 or 740, with an upper tube plate 540 or 740 and a third plurality of holes 552 or 752 Tube plate 550 or 750. Either showerhead assembly 700 or isolator assembly 500 further includes a plurality of gas tubes 580 or 780 extending from the upper tube plate 540 or 740 to the lower tube plate 550 or 750, respectively. Or each of 780 is connected to and in fluid communication with an individual hole from the second plurality of holes 542 or 742 and an individual hole from the third plurality of holes 552 or 752.

  In another embodiment, the exhaust assembly 800 extends through the body 802 between the body 802 having an upper portion 806 disposed on the lower portion 804 and the inner surface 809 of the body 802 via the upper portion 806 and the lower portion 804. A central channel 816 extending parallel to the existing central axis 801, an exhaust outlet 860 disposed on the top 806 of the body 802, and a first plurality of holes 832, disposed within the central channel 816. An additional diffuser plate 830 and an upper tube plate 840 having a second plurality of holes 842 and optionally disposed within the central channel 816 and below the diffuser plate 830 (if present); A lower tube plate 850 having a third plurality of holes 852 and disposed within the central channel 816 and below the upper tube plate 840. There. The exhaust assembly 800 further includes a plurality of exhaust tubes 880 extending from the upper tube plate 840 to the lower tube plate 850, each of the exhaust tubes 880 being an individual hole and a second plurality of holes 842. Coupled with individual holes of the third plurality of holes 852 for fluid communication.

  4A-4E illustrate a wafer carrier track 400 according to one embodiment described herein. In another embodiment, a wafer carrier 480 in a deposition reactor system, such as reactor 100, that includes an upper segment 410 of wafer carrier track 400 disposed on a lower segment 412 of wafer carrier track 400 is levitated. A wafer carrier track 400 is provided for levitating and traversing the substrate susceptor. The gas cavity 430 is formed between the upper segment 410 and the lower segment 412 of the wafer carrier track 400. The two side surfaces 416 extend parallel to each other along the upper segment 410 of the wafer carrier track 400. The guide path 420 extends along the upper surface 418 of the upper segment 410 between the two side surfaces 416. The plurality of gas holes 438 are disposed in the guide path 420 and extend from the upper surface 418 of the upper segment 410 to the gas cavity 430 through the upper segment 410.

  In another embodiment, the upper lap joint 440 is located at one end of the wafer carrier track 400, the lower lap joint 450 is located at the opposite end of the wafer carrier track 400, and the upper lap joint 440 is , Extending along the guide path 420 and part of the side surface 416. The upper lap joint 440 has a lower surface 442 that extends further than the lower segment 412. The lower lap joint 450 has an upper surface 452 that extends further from the guide path 420 and the side surface 416 of the wafer carrier track 400.

  In general, the upper segment 410 and / or the lower segment 412 of the wafer carrier track 400 can each comprise quartz. In some examples, the lower segment 412 of the wafer carrier track 400 is a quartz plate. The upper segment 410 and the lower segment 412 of the wafer carrier track 400 can be fused together. In one embodiment, both the upper segment 410 and the lower segment 412 include quartz and are fused together to form a gas cavity therebetween. While the quartz contained in the upper segment 410 and / or the lower segment 412 of the wafer carrier track 400 is typically transparent, in some embodiments, a portion of the wafer carrier track 400 may include opaque quartz.

  In another embodiment, the gas port 434 extends from the side 402 of the wafer carrier track 400 into the gas cavity 430. In one example, the gas port 434 extends through the upper segment 410. The plurality of gas holes 438 is a number from about 10 holes to about 50 holes, preferably from about 20 holes to about 40 holes. Each of the gas holes 438 can have a diameter in the range of about 0.005 inches to about 0.05 inches, preferably about 0.01 inches to about 0.03 inches.

  In other embodiments, the wafer carrier track system may include two or more wafer carrier tracks 400 arranged end to end in series, as shown in FIGS. 4D-4E. In one embodiment, the upper lap joint 440 of the first wafer carrier track 400 disposed on the lower lap joint 450 of the second wafer carrier track 400, and the upper lap joint 440 of the first wafer carrier track 400, The first wafer carrier track 400 aligned with the exhaust port formed between the lower lap joint 450 of the second wafer carrier track 400 and the second guide path on the lower surface of the second wafer carrier track 400. And a first guide path on the top surface of the wafer carrier track system. In some examples, the upper lap joint 440 of the second wafer carrier track 400 may be disposed on the lower lap joint 450 of the third wafer carrier track 400 (not shown).

  In another embodiment, a wafer carrier track 400 having a gas cavity 430 formed therein, a guide path 420 extending along the wafer carrier track 400, and inside the guide path 420, the wafer carrier track 400. A plurality of gas holes 438 extending into the gas cavity 430, an upper lap joint 440 disposed at one end of the wafer carrier track 400, and a lower lap joint disposed at the opposite end of the wafer carrier track 400 450, a wafer carrier track 400 is provided for levitating and traversing a floating wafer carrier 480 in a deposition reactor system, such as reactor 100, and the upper lap joint 440 is a part of the guide path 420. Extend the lower lap join 450 has further extending the top surface of the guide path 420 of the wafer carrier track 400.

  At least one side is disposed on the wafer carrier track 400 and extends along the guide path 420 thereon. In some examples, the two side surfaces 416 are disposed on the wafer carrier track 400 and extend along the guide path 420 thereon. The guide path 420 can extend between the two side surfaces 416. In one embodiment, the upper segment 410 of the wafer carrier track 400 can be positioned over the lower segment 412 of the wafer carrier track 400. The upper segment 410 of the wafer carrier track 400 can have a guide path 420 extending along the top surface. A gas cavity 430 may be formed between the upper segment 410 and the lower segment 412 of the wafer carrier track 400. In some examples, the upper segment 410 and the lower segment 412 of the wafer carrier track 400 can be fused together. In some embodiments, the wafer carrier track 400 includes quartz. The upper segment 410 and the lower segment 412 of the wafer carrier track 400 can each comprise quartz. In one example, the lower segment 412 of the wafer carrier track 400 is a quartz plate.

  In other embodiments, the gas port 434 extends from the side of the wafer carrier track 400 to the gas cavity 430. The gas port 434 is used for flowing a floating gas from a plurality of gas holes 438 on the upper surface of the wafer carrier track 400 into the gas cavity 430 through the upper surface of the wafer carrier track 400. The plurality of gas holes 438 is a number from about 10 holes to about 50 holes, preferably from about 20 holes to about 40 holes. Each of the gas holes 438 can have a diameter in the range of about 0.005 inches to about 0.05 inches, preferably about 0.01 inches to about 0.03 inches.

  In another embodiment, FIGS. 12A-12E transport substrates through various processing chambers, including the CVD reactors described herein, as well as other processing chambers used for deposition or etching. A floating wafer carrier 480 that can be used to do this is shown. The floating wafer carrier 480 has a short side 471, a long side 473, an upper surface 472, and a lower surface 474. Although the floating wafer carrier 480 is shown in a rectangular shape, it can also have a square shape, a circular shape, or other shapes. The floating wafer carrier 480 includes or is formed from graphite or other materials. The floating wafer carrier 480 usually moves to the short side 471 that moves forward through the CVD reactor while the long side 473 faces the side surface of the CVD reactor.

  12A-12B illustrate a floating wafer carrier 480 according to one embodiment described herein. FIG. 12A shows a top view of a floating wafer carrier 480 that includes three indentations 475 on the top surface 472. The wafer or substrate is positioned in the recess 475 while being transferred through the CVD reactor during the process. Although shown with three indentations 475, the top surface 472 can have more or fewer indentations, including the absence of indentations. For example, the top surface 472 of the floating wafer carrier 480 includes 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 12 or more indentations to accommodate a wafer or substrate. be able to. In some examples, a wafer / substrate or multiple wafers / substrates are placed directly on the top surface 472 that does not have a recess.

  FIG. 12B shows a bottom view of a floating wafer carrier 480 that includes a recess 478 on the lower surface 474, as described in one embodiment. The recess 478 is used as an aid to lift the floating wafer carrier 480 by introducing a gas cushion under the floating wafer carrier 480. The gas flow rate is directed at a recess 478 that accumulates gas to form a gas cushion. The lower surface 474 of the floating wafer carrier 480 may have no recess, or in the case of one recess 478 (FIG. 12B), in the case of two recesses 478 (FIGS. 12C-12E), and in the case of three recesses 478 (not shown). Or more). Each of the recesses 478 can have straight or tapered sides. In one example, each indentation 478 has a tapered side surface such that side surface 476 changes more steeply or more rapidly than side surface 477 having a gradual change in angle. A side surface 477 in the recess 478 is tapered to correct a temperature gradient across the floating wafer carrier 480. The side surface 477 is tapered to float and move / carry the floating wafer carrier 480 along the wafer carrier track 400 while forming a gas pocket and maintaining the gas pocket under the floating wafer carrier 480. Or it forms diagonally. In another example, the recesses 478 can be such that the side 476 is straight or substantially straight and the side 477 has a taper / angle or the side 477 is straight or substantially straight and the side 476 is To have a taper / angle, it has a straight or substantially straight side and a tapered side. Also, the recesses 478 can all be straight side surfaces such that the side surfaces 476 and 477 are straight or substantially straight.

  In another embodiment, FIGS. 12C-12E show a bottom view of a floating wafer carrier 480 that includes two indentations 478 in the lower surface 474. The two recesses 478 help to float the floating wafer carrier 480 by introducing a gas cushion under the floating wafer carrier 480. The gas flow rate is directed at a recess 478 that accumulates gas to form a gas cushion. The recess 478 can have straight or tapered sides. In one example, as shown in FIG. 10E, the recess 478 has side surfaces that are all straight such that the side surfaces 476 and 477 are straight, eg, perpendicular to the plane of the lower surface 474. In another example, as shown in FIG. 10F, the recesses 478 have all tapered sides such that the side 476 is steeper or steeper than the side 477, which has many gradual changes in angle. ing. A side surface 477 in the recess 478 is tapered to correct a temperature gradient across the floating wafer carrier 480. The recess 478 is a combination of a linear side surface and a tapered side surface so that the side surface 476 is linear and the side surface 477 is tapered or the side surface 477 is linear and the side surface 476 has a taper. Can also be included.

  The floating wafer carrier 480 includes a heat flux that extends from the lower surface 474 to the upper surface 472 and any substrate disposed thereon. Heat flux is controlled by both the internal pressure and length of the processing system. The profile of the floating wafer carrier 480 is tapered to compensate for heat loss from other sources. During the process, heat is lost through the edge of the floating wafer carrier 480 such as the short side 471 and the long side 473. However, the lost heat can be compensated for by allowing more heat flux to the edge of the flying wafer carrier 480 by reducing the gap of the channel in flight.

  In another embodiment, wafer carrier track 400 includes a floating wafer carrier 480 disposed on guide path 420. In some examples, the floating wafer carrier 480 has at least one recessed pocket disposed in the lower surface. In another example, the floating wafer carrier 480 has at least two recessed pockets disposed in the lower surface.

  5A-5D show an isolator assembly 500 for a deposition chamber, such as reactor 100, according to embodiments described herein. In one embodiment, the isolator assembly 500 includes a body 502 having an upper portion 506 and a lower portion 504 and a central channel 516 extending through the upper portion 506 and the lower portion 504 of the body 502. The upper portion 506 includes an upper surface 507. The central channel 516 extends between the inner surface 509 of the body 502 and parallel to a central axis 501 that extends through the body 502. The diffusion plate 530 includes a plurality of gas holes 532 and is disposed within the central channel 516. In one example, the diffuser plate 530 is disposed on the flange or protrusion 510. In another example, isolator assembly 500 does not include a diffuser plate 530 disposed therein.

  The isolator assembly 500 includes an upper tube plate 540 having a plurality of gas holes 542 and disposed within the central channel 516 and below the diffusion plate 530. The isolator assembly 500 also includes a lower tube plate 550 having a plurality of gas holes 552 and disposed within the central channel 516 and below the upper tube plate 540. A plurality of gas tubes 580 extend from the upper tube plate 540 to the lower tube plate 550, and each tube is connected to an individual hole from the plurality of gas holes 542 and an individual hole from the plurality of gas holes 552. Fluid communication. Each of the gas tubes 580 extend parallel to or substantially parallel to each other, as in the many embodiments described herein, as well as to the central axis 501. In an alternative embodiment not shown, each of the gas tubes 580 extends at a predetermined angle relative to the central axis 501 within a range of about 1 ° to about 15 ° or more.

  Isolator assembly 500 is used to disperse gases such as purge gas, precursor gas, and / or carrier gas by providing flow paths to cavities 538, 548, and 558 through inlet port 522. . A cavity 538 is formed between the upper plate 520 and the diffusion plate 530 in the central channel 516. A cavity 548 is formed between the diffusion plate 530 and the upper tube plate 540 in the central channel 516. A cavity 558 is formed between the upper tube plate 540 and the lower tube plate 550 in the central channel 516.

  In another embodiment, the isolator assembly 500 includes a body 502 that includes an upper portion 506 and a lower portion 504, the upper portion 506 including a flange that extends over the lower portion 504, and the upper portion 506 and the lower portion 504 of the body 502. A central channel 516 extending parallel to the central axis 501 extending through the body 502 and a diffusion plate 530 disposed within the central channel 516 and disposed within the central channel 516, An upper tube plate 540 that includes a plurality of gas holes 542 and is disposed within the central channel 516 and below the diffusion plate 530, and a plurality of gas holes 552 that are within the central channel 516 and are within A lower tube plate 550 disposed below, and an upper tube plate 540 and a lower tube plate Extends to bets 550, each tube contains a plurality of gas tubes 580 in fluid communication in conjunction with individual holes from each hole and the gas hole 552 from a plurality of gas holes 542, the.

  In another embodiment, the isolator assembly 500 includes an upper portion 506 and a lower portion 504, the upper portion 506 extends beyond the lower portion 504 and adjacent to the central axis 501 of the body 502, and the lower portion 504 extends beyond the upper portion 506. A central channel 516 that extends parallel to the central axis 501 between an inner surface 509 of the main body 502 via a main body 502 that extends parallel to the central axis 501 of the main body 502 and an upper portion 506 and a lower portion 504 of the main body 502. And a diffusion plate 530 disposed within the central channel 516 and including a plurality of gas holes 532 and an upper tube plate disposed within the central channel 516 and below the diffusion plate 530. 540 and a plurality of gas holes 552 and disposed within the central channel 516 and below the upper tube plate 540. A lower tube plate 550 that extends from the upper tube plate 540 to the lower tube plate 550, each tube being connected to an individual hole from the plurality of gas holes 542 and an individual hole from the gas hole 552. A plurality of gas tubes 580 communicating with each other.

  In another embodiment, the isolator assembly 500 extends through the body 502 between the body 502 including the upper portion 506 and the lower portion 504 and the inner surface 509 of the body 502 via the upper portion 506 and the lower portion 504 of the body 502. A central channel 516 extending parallel to the central axis 501, a plurality of gas holes 532, a diffusion plate 530 disposed in the central channel 516, and a plurality of gas holes 542, and within the central channel 516. An upper tube plate 540 disposed below the diffusion plate 530 and a lower tube plate 550 including a plurality of gas holes 552 and disposed within the central channel 516 and below the upper tube plate 540. It is out.

  In another embodiment, the isolator assembly 500 extends through the body 502 between the body 502 including the upper portion 506 and the lower portion 504 and the inner surface 509 of the body 502 via the upper portion 506 and the lower portion 504 of the body 502. A central channel 516 extending parallel to the central axis 501, a plurality of gas holes 532, an upper tube plate 540 disposed within the central channel 516 and below the diffusion plate 530, and a plurality of gas holes 542 A lower tube plate 550 disposed within the central channel 516 and below the upper tube plate 540, and extending from the upper tube plate 540 to the lower tube plate 550, each tube extending from the plurality of gas holes 532 A plurality of gas in fluid communication with the individual holes and the individual holes from the plurality of gas holes 542. It includes a tube 580, a.

  In some embodiments, isolator assembly 500 is a modular showerhead assembly. The upper portion 506 and the lower portion 504 of the body 502 can each include a material such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof. In one example, the upper portion 506 and the lower portion 504 of the body 502 each include stainless steel or an alloy thereof.

  In one embodiment, the isolator assembly 500 includes a gas inlet 560 disposed in the upper portion 506 of the body 502. The upper plate 520 is disposed on the upper surface of the upper portion 506 of the main body 502, and the gas inlet 560 is disposed on the plate. The plate can include materials such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof. In some examples, the plate has an inlet port 522 extending therethrough. The gas inlet 560 has an inlet tube 564 that extends through an inlet port 522. An inlet nozzle 562 is connected to one end of the inlet tube 564 and is located above the plate. In another example, the upper surface of the upper portion 506 of the showerhead body has a groove 508 that includes a central channel 516. The O-ring may be disposed in the groove 508. The diffusion plate 530 is disposed on a protrusion or flange protruding from the side surface of the main body 502 in the central channel 516.

  In one embodiment, the plurality of gas tubes 580 are in the range of about 500 tubes to about 1500 tubes, preferably about 700 tubes to about 1200 tubes, more preferably about 800 tubes to about 1000 tubes, For example, it can have about 900 tubes. In some examples, each tube can have a length in the range of about 0.5 cm to about 2 cm, preferably about 0.8 cm to about 1.2 cm, for example about 1 cm. In other examples, each tube can have a diameter in the range of about 0.005 inches to about 0.05 inches, preferably about 0.01 inches to about 0.03 inches. In some examples, the tube is a hypodermic needle. The tube includes or is made from materials such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof.

  In one embodiment, each of the plurality of gas holes 532 on the diffusion plate 530 has a larger diameter than each of the plurality of gas holes 542 on the upper tube plate 540. Further, each of the plurality of gas holes 532 on the diffusion plate 530 has a larger diameter than each of the plurality of gas holes 552 on the lower diffusion plate. In addition, each of the plurality of gas holes 542 on the upper tube plate 540 has the same or substantially the same diameter as each of the plurality of gas holes 552 on the lower tube plate 550.

  In one embodiment, the diffuser plate 530 includes or is made of materials such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof. The The diffuser plate 530 includes a number of holes in the range of about 20 holes to about 200 holes, preferably about 25 holes to about 55 holes, more preferably about 40 holes to about 60 holes. it can. Each hole in the diffuser plate 530 can have a diameter in the range of about 0.005 inches to about 0.05 inches, preferably about 0.01 inches to about 0.03 inches. In another embodiment, the upper tube plate 540 and / or the lower tube plate 550 are made of steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof, respectively. Or are made from such materials. Upper tube plate 540 and / or lower tube plate 550 may each have from about 500 holes to about 1500 holes, preferably from about 700 holes to about 1200 holes, more preferably from about 800 holes to about 1000 holes. have. Each hole in the upper tube plate 540 and / or the lower tube plate 550 has a diameter in the range of about 0.005 inches to about 0.05 inches, preferably about 0.01 inches to about 0.03 inches, respectively. Can have. In another embodiment, the isolator assembly 500 is from about 10 holes / in 2 (number of holes per square inch) to about 60 holes / in 2, preferably from about 15 holes / in 2 to about 45 holes / in 2. And more preferably has a gas pore density and / or number of tubes in the range of about 20 holes / in 2 to about 36 holes / in 2.

  In one example, the top surface of the upper portion 506 of the body 502 of the isolator assembly 500 is a metal plate. In other examples, isolator assembly 500 can have a rectangular shape or a square shape. In another embodiment, the body 502 of the isolator assembly 500 further includes a temperature adjustment system. A temperature regulation system, such as the temperature regulation system 190, can include a fluid path 518 extending into the body 502 and can have an inlet 514 a and an outlet 514 b that are in fluid communication with the fluid path 518. . Inlet 514a and outlet 514b are each coupled to a fluid at least one heat exchanger, such as heat exchanger 180a, 180b or 180c in liquid reservoir or temperature control system 190, as shown in FIG. 1F. Communicate.

  FIG. 6 shows a heating lamp assembly 600 used to heat a wafer or substrate, as well as a wafer carrier or substrate support in a deposition reactor system, as described in the embodiments herein. ing. In one embodiment, the lamp housing 610 is disposed on the upper surface 606 of the support base 602 and includes a first lamp holder 620a and a second lamp holder 620b, and extends from the first lamp holder 620a to the second lamp holder 620b. A plurality of lamps 624, each having a split filament or a non-split filament, and a reflector 650 disposed on the upper surface 606 of the support base 602 includes a first lamp holder 620a and a second lamp. A heating lamp assembly 600 is provided that is disposed between the holder 620b.

  In another embodiment, the heating lamp assembly 600 is disposed on the upper surface 606 of the support base 602 and includes a lamp housing 610 including a first lamp holder 620a and a second lamp holder 620b, and the first lamp holder 620a. A first plurality of lamps 624 extending to a second lamp holder 620b, each of the first plurality of lamps having a non-split filament, A second plurality of lamps 624 extending from the lamp holder 620a to the second lamp holder 620b, each of the second plurality of lamps having a second plurality of lamps 624 having undivided filaments; On the upper surface 606 of the support base 602 between the first lamp holder 620a and the second lamp holder 620b And arranged reflector 650 includes.

  In another embodiment, the heating lamp assembly 600 is disposed on the upper surface 606 of the support base 602 and includes a lamp housing 610 including a first lamp holder 620a and a second lamp holder 620b, and the first lamp holder 620a. A first plurality of lamps 624 extending to a second lamp holder 620b, each of the first plurality of lamps having a split filament, and a first lamp A second plurality of lamps 624 extending from the holder 620a to the second lamp holder 620b, each of the second plurality of lamps having a non-split filament; A first plurality of lamps 624 extending between the first and second lamp holders while a second plurality of lamps They are arranged sequentially or alternately between the lamp 624. The reflector 650 can be disposed on the upper surface 606 of the support base 602 between the first lamp holder 620a and the second lamp holder 620b.

  In another embodiment, the heating lamp assembly 600 is disposed on the upper surface 606 of the support base 602 and includes a lamp housing 610 including a first lamp holder 620a and a second lamp holder 620b, and the first lamp holder 620a. A plurality of lamps 624 extending to the second lamp holder 620b, the plurality of lamps 624 including a first group of lamps and a second group of lamps arranged sequentially or alternately with each other, the first group Each lamp of the first lamp includes a split filament, each lamp of the second group of lamps includes a non-split filament, and a reflector 650 is a support base between the first lamp holder 620a and the second lamp holder 620b. It is disposed on the upper surface 606 of 602.

  In another embodiment, the heating lamp assembly 600 is disposed on the upper surface 606 of the support base 602 and includes a lamp housing 610 including a first lamp holder 620a and a second lamp holder 620b, a first lamp holder 620a, A plurality of posts 622 disposed on the second lamp holder 620b and a plurality of lamps 624 extending from the first lamp holder 620a to the second lamp holder 620b, each lamp being a split filament or A non-divided filament is provided, and a reflector 650 is disposed on the upper surface 606 of the support base 602 between the first lamp holder 620a and the second lamp holder 620b.

  In another embodiment, the heating lamp assembly 600 is disposed on the upper surface 606 of the support base 602 and includes a lamp housing 610 including a first lamp holder 620a and a second lamp holder 620b, a first lamp holder 620a, A plurality of posts 622 disposed on the second lamp holder 620b and a plurality of lamps 624 extending from the first lamp holder 620a to the second lamp holder 620b, each lamp being a split filament or With undivided filaments, each lamp was placed between a first end located between two posts 622 on the first lamp holder 620a and between two posts 622 on the second dump holder 620b. A reflector 650 having a first end and a second lamp holder 620a; 0b is disposed on the upper surface 606 of the support base 602 with the.

  In another embodiment, the heating lamp assembly 600 is disposed on the upper surface 606 of the support base 602 and includes a lamp housing 610 including a first lamp holder 620a and a second lamp holder 620b, a first lamp holder 620a, A plurality of posts 622 disposed on the second lamp holder 620b and a plurality of lamps 624 extending from the first lamp holder 620a to the second lamp holder 620b, each lamp having a first A first end located between the two posts 622 on the lamp holder 620a and a second end located between the two posts 622 on the second dump holder 620b, the reflector 650 having a first end. Between the first lamp holder 620a and the second lamp holder 620b on the upper surface 606 of the support base 602. To have.

  In another embodiment, the heating lamp assembly 600 is disposed on the upper surface 606 of the support base 602 and includes a lamp housing 610 including a first lamp holder 620a and a second lamp holder 620b, a first lamp holder 620a, A plurality of posts 622 disposed on the second lamp holder 620b, a plurality of lamps 624 extending from the first lamp holder 620a to the second lamp holder 620b, the first lamp holder 620a and the second And a reflector 650 disposed on the upper surface 606 of the support base 602 with the lamp holder 620b.

  In another embodiment, a lamp housing 610 disposed on the upper surface 606 of the support base 602 and including a first lamp holder 620a and a second lamp holder 620b, and the first lamp holder 620a to the second lamp holder 620b. A plurality of lamps 624 extending to the reflector, and a reflector 650 disposed on the upper surface 606 of the support base 602 between the first lamp holder 620a and the second lamp holder 620b. A heating lamp assembly 600 is provided for the system.

  In one embodiment, the heating lamp assembly 600 includes a reflector 650 and / or the top surface of the reflector 650 is a reflective metal such as gold, silver, copper, aluminum, nickel, chromium, alloys thereof, or combinations thereof. Is included. In many examples, the upper surface of reflector 650 and / or reflector 650 includes gold or a gold alloy. The underside of wafer carrier track 400 is exposed to radiation emitted from lamp 624 in heating lamp assembly 600 and reflected from reflector 650, top surface of reflector 650, and / or each mirror 652. The emitted radiation is absorbed by the wafer carrier track 400, the floating wafer carrier 460 and the wafer 90 in the reaction apparatus 100. In some embodiments of the processes described herein, the wafer carrier track 400, the floating wafer carrier 460, and / or the wafer 90 are each about 250 ° C. to about 350 ° C., preferably about 275 ° C. to about 325 ° C. More preferably, it is heated by the emitted radiation to a temperature in the range of about 290 ° C. to about 310 ° C., for example about 300 ° C.

  The heating lamp assembly 600 can include at least one mirror 652 that extends along the top surface 606 of the support base 602 and is perpendicular or substantially perpendicular to the top surface 606 of the support base 602. In some examples, the mirror 652 is the inner surface of each lamp holder 620a or 620b having a reflective coating deposited or disposed thereon. In other examples, the mirror 652 may be a pre-manufactured or modular mirror or reflective material attached or glued to the inner surface of each lamp holder 620a or 620b. The at least one mirror 652 is generally positioned to face toward the reflector 650 at an angle of about 90 ° relative to the plane of the surface 606. Preferably, in another embodiment described herein, the heating lamp assembly 600 includes two mirrors 652 that extend along the top surface 606 of the support base 602. Both mirrors are perpendicular or substantially perpendicular to the upper surface 606 of the support base 602, and both mirrors 652 are positioned to face each other towards the reflector 650 between them. Each of the two mirrors 652 faces toward the reflector 650 at an angle of about 90 ° to the plane of the surface 606. The top surface of each mirror and / or each mirror 652 includes a reflective metal such as gold, silver, copper, aluminum, nickel, chromium, alloys thereof, or combinations thereof. In many examples, the upper surface of each mirror 652 and / or each mirror 652 includes gold or a gold alloy.

  In another embodiment not shown, each mirror 652 is at a greater angle than 90 ° relative to the plane of the surface 606, such as an angle in the range of greater than 90 ° to about 135 °, from the reflector 650. Positioned to look slightly outward. A mirror 652 positioned at an angle greater than 90 ° is utilized to direct energy toward the wafer carrier track 400, the floating wafer carrier 460, or other portion or surface within the reactor 100. In an alternative embodiment, the heating lamp assembly 600 can include three or more mirrors 652 along the top surface 606 of the support base 602.

  The plurality of lamps 624 in the heating lamp assembly 600 may be from about 10 lamps to about 100 lamps, preferably from about 20 lamps to about 50 lamps, more preferably from about 30 lamps to about 40 lamps. be able to. In one example, the heating lamp assembly 600 includes about 34 lamps. Embodiments provide that each lamp is electrically connected to a power source, an independent switch, and a controller. The controller may be used independently to control the power to each lamp.

In other embodiments, the support base 602 in each heating lamp assembly 600 and each lamp holder 620a or 620b is made of steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, etc., respectively. Including or made from such materials or alloys thereof. In some examples, the first lamp holder 620a or the second lamp holder 620b includes or is made of stainless steel or an alloy thereof, respectively. The first lamp holder 620a or the second lamp holder 620b is about 2000 W / m 2 -K to about 3000 W / m 2 -K, preferably about 2300 W / m 2 -K to about 2700 W / m 2 -K, respectively. Cooling efficiency within the range of. In one example, the cooling efficiency is about 2500 W / m 2 -K. In other embodiments, the first lamp holder 620a and the second lamp holder 620b each have a thickness in the range of about 0.001 inches to about 0.1 inches.

  In accordance with the embodiments described herein, FIG. 10A shows an unsplit filament lamp 670 and FIG. 10B shows a split filament lamp 680. Split filament lamp 680 includes bulb 682 and non-split filament 684, while non-split filament lamp 670 includes bulb 672 and non-split filament 674. As described throughout the embodiments herein, the plurality of lamps 624 is generally a non-split filament lamp 670, a split filament lamp 680, or a mixture of a non-split filament lamp 670 and a split filament lamp 680. Is included.

  11A-11F illustrate a wafer carrier track such as a wafer carrier track 400, a wafer carrier such as a floating wafer carrier track 480, or a substrate support in a deposition reactor such as the reactor 100, as described in the embodiments. And / or different lamps, such as lamp 624, utilized to adjust the heat profile of a wafer or substrate, such as wafer 90. In one embodiment, FIG. 11A shows a plurality of lamps including all non-split filament lamps 670 and FIG. 11B shows a plurality of lamps including all split filament lamps 680. In another embodiment, FIG. 11C shows a plurality of lamps that include non-split filament lamps 670 and split filament lamps 680 sequentially or alternately. In other embodiments, FIG. 11E shows a plurality of lamps including non-divided filament lamps 670 between every other split filament 680, while FIG. 11D shows split filaments between every other non-split filament lamp 670. A plurality of lamps including lamp 680 are shown. FIG. 11F shows a plurality of lamps including non-split filament lamps 670 and split filament lamps 680, either sequentially or alternately, each lamp being further away from each other than the lamps of FIGS. 11A-11E.

  In another embodiment, a heating lamp assembly 600 provides a method for heating a substrate or substrate susceptor, such as a floating wafer carrier 480, in a deposition reactor system, such as reactor 100, which includes a heating lamp. Exposing the lower surface of the substrate susceptor to energy released from the assembly 600 and heating the substrate susceptor to a predetermined temperature, the heating lamp assembly 600 being disposed on the upper surface 606 of the support base 602 and having at least one lamp holder A lamp housing 610 including 620a or 620b, a plurality of lamps 624 extending from at least one lamp holder, and a reflector disposed on the upper surface 606 of the support base 602 below the lamp and next to the lamp holder 650 and And Nde.

  The method embodiments further provide that the heating lamp assembly 600 includes a split filament lamp 680, a non-split filament, or a mixture of lamps that includes either split or non-split filaments. In one embodiment, each of the lamps has a split filament lamp 680. The split filament lamp 680 can have a center between the first end and the second end. The first and second ends of the split filament lamp 680 are kept warmer than the center of the split filament lamp 680. Thus, the outer edge of the substrate susceptor is kept warmer than the center point of the substrate susceptor.

  In another embodiment, each of the lamps has an unsplit filament lamp 670. The non-split filament lamp 670 can have a center between the first end and the second end. The center of the non-split filament lamp 670 is kept warmer than the first and second ends of the non-split filament lamp 670. Thus, the center point of the substrate susceptor is kept warmer than the outer edge of the substrate susceptor.

  In another embodiment, the plurality of lamps 624 includes split filament lamps and non-split filament lamps. In one embodiment, the split filament lamp 680 and the non-split filament lamp 670 are sequentially disposed between each other. Each lamp can be electrically connected to a power source and a controller, respectively. The method further includes adjusting the amount of electricity flowing through each lamp. In one example, split filament lamp 680 can be centered between a first end and a second end. The first and second ends of the split filament lamp 680 are kept warmer than the center of the split filament lamp 680. Thus, the outer edge of the substrate susceptor is kept warmer than the center point of the substrate susceptor. In another example, unsplit filament lamp 670 can be centered between a first end and a second end. The center of the non-split filament lamp 670 is kept warmer than the first and second ends of the non-split filament lamp 670. Thus, the center point of the substrate susceptor is kept warmer than the outer edge of the substrate susceptor.

  In various embodiments, the method provides that the substrate susceptor is a substrate carrier or wafer carrier. The lamp housing 610 can have a first lamp holder 620a and a second lamp holder 620b. The first lamp holder 620a and the second lamp holder 620b are parallel or substantially parallel to each other. In one example, the reflector 650 is disposed between the first lamp holder 620a and the second lamp holder 620b. The first lamp holder 620a and the second lamp holder 620b each have a thickness in the range of about 0.001 inch to about 0.1 inch. The predetermined thickness of the lamp holder helps to maintain a constant temperature of the lamp holder. Accordingly, the first lamp holder 620a and the second lamp holder 620b are each maintained at a temperature in the range of about 275 ° C. to about 375 ° C., preferably about 300 ° C. to 350 ° C.

  7A-7D show a showerhead assembly 700 for a deposition chamber, such as reactor 100, according to embodiments described herein. In one embodiment, the showerhead assembly 700 includes a body 702 having an upper portion 706 and a lower portion 704 and a central channel 716 extending through the upper portion 706 and the lower portion 704 of the body 702. Upper portion 706 includes an upper surface 707. The central channel 716 extends parallel to the central axis 701 that extends between the inner surface 709 of the body 702 and extends through the body 702. The diffusion plate 730 includes a plurality of gas holes 732 and is disposed within the central channel 716. In one example, the diffuser plate 730 is disposed on a flange or protrusion 710. In another example, the showerhead assembly 700 does not include an optional diffuser plate 730 disposed therein.

  The showerhead assembly 700 further includes an upper tube plate 740 having a plurality of gas holes 742 and disposed within the central channel 716 below the diffuser plate 730. The showerhead assembly 700 also includes a lower tube plate 750 having a plurality of gas holes 752 and disposed under the upper tube plate 740 and in the central channel 716. A plurality of gas tubes 780 extend from the upper tube plate 740 to the lower tube plate 750, and each tube is connected to an individual hole from the plurality of gas holes 742 and an individual hole from the plurality of gas holes 752 to form a fluid. Communicate. Each of the gas tubes 780 extend parallel to or substantially parallel to each other, similar to the central axis 701 in many embodiments described herein. In an alternative embodiment not shown, each of the gas tubes 780 can extend at a predetermined angle with respect to the central axis 701 within a range of about 1 ° to about 15 ° or more.

  The showerhead assembly 700 is used to disperse gases such as purge gas, precursor gas, and / or carrier gas by providing flow paths to the cavities 738, 748 and 758 through the inlet port 722. The A cavity 738 is formed between the upper plate 720 and the diffusion plate 730 in the central channel 716. A cavity 748 is formed in the central channel 716 between the diffusion plate 730 and the upper tube plate 740. A cavity 758 is formed between the upper tube plate 740 and the lower tube plate 750 in the central channel 716.

  In another embodiment, the showerhead assembly 700 includes a body 702 that includes an upper portion 706 and a lower portion 704, the upper portion 706 including a flange extending over the lower portion 704, and the upper portion 706 and the lower portion 704 of the body 702. A central channel 716 extending parallel to the central axis 701 extending through the body 702 between the inner surface 709 of the 702, and a diffusion plate 730 disposed in the central channel 716 including a plurality of gas holes 732 An upper tube plate 740 that includes a plurality of gas holes 742 and is disposed within the central channel 716 and below the diffusion plate 730, and a plurality of gas holes 752 that is within the central channel 716 and that is within the upper channel plate 740. A lower tube plate 750 disposed below the upper tube plate 740 and a lower tube plate Extends to over preparative 750, each tube contains a plurality of gas tubes 780 in fluid communication in conjunction with individual holes from each hole and the gas hole 752 from a plurality of gas holes 742, the.

  In another embodiment, the showerhead assembly 700 includes an upper portion 706 and a lower portion 704, the upper portion 706 extends beyond the lower portion 704 and adjacent to the central axis 701 of the body 702, and the lower portion 704 extends beyond the upper portion 706. A central channel 716 extending parallel to the central axis 701 between an inner surface 709 of the main body 702 via an upper portion 706 and a lower portion 704 of the main body 702, and a main body 702 extending parallel to the central axis 701. A diffusion plate 730 including a plurality of gas holes 732 and disposed within the central channel 716; and an upper tube plate 740 including a plurality of gas holes 742 and disposed within the central channel 716 and below the diffusion plate 730; , Including a plurality of gas holes 752 and located within the central channel 716 and below the upper tube plate 740 A tube plate 750, extending from the upper tube plate 740 to the lower tube plate 750, each tube being in fluid communication with an individual hole from the plurality of gas holes 742 and an individual hole from the plurality of gas holes 752 A plurality of gas tubes 780.

  In another embodiment, the showerhead assembly 700 extends through the body 702 between the body 702 including the upper portion 706 and the lower portion 704 and the inner surface 709 of the body 702 via the upper portion 706 and the lower portion 704 of the body 702. A central channel 716 extending parallel to the existing central axis 701, a plurality of gas holes 732, a diffusion plate 730 disposed in the central channel 716, a plurality of gas holes 742, and within the central channel 716 An upper tube plate 740 disposed below the diffusion plate 730, and a lower tube plate 750 including a plurality of gas holes 752 and disposed within the central channel 716 and below the upper tube plate 740. Contains.

  In another embodiment, the showerhead assembly 700 extends through the body 702 between the body 702 including the upper portion 706 and the lower portion 704 and the inner surface 709 of the body 702 via the upper portion 706 and the lower portion 704 of the body 702. A central channel 716 extending parallel to the existing central axis 701, an upper tube plate 740 including a plurality of gas holes 732, the central channel 716 disposed below the diffusion plate 730, and a plurality of gas holes 742 A lower tube plate 750 disposed within the central channel 716 and below the upper tube plate 740, and extending from the upper tube plate 740 to the lower tube plate 750, each tube extending from the plurality of gas holes 732 And a plurality of gas tubes in fluid communication with the individual holes and the individual holes from the gas holes 742. It includes a blanking 780, a.

  In some embodiments, the showerhead assembly 700 is a modular showerhead assembly. Upper portion 706 and lower portion 704 of body 702 can each include a material such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof. In one example, the upper portion 706 and the lower portion 704 of the body 702 each include stainless steel or an alloy thereof.

  In one embodiment, the showerhead assembly 700 includes a gas inlet 760 disposed in the upper portion 706 of the body 702. The upper plate 720 is disposed on the upper surface of the upper portion 706 of the main body 702, and the gas inlet 760 is disposed on the plate. The plate can include materials such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof. In some examples, the plate has an inlet port 722 extending therethrough. The gas inlet 760 has an inlet tube 764 that extends through an inlet port 722. An inlet nozzle 762 is connected to one end of the inlet tube 764 and is located above the plate. In another example, the upper surface of the upper portion 706 of the showerhead body has a groove 708 that includes a central channel 716. The O-ring may be disposed in the groove 708. The diffusion plate 730 is disposed on a protrusion or flange protruding from the side surface of the main body 702 in the central channel 716.

  In one embodiment, the plurality of gas tubes 780 is in the range of about 500 tubes to about 1500 tubes, preferably about 700 tubes to about 1200 tubes, more preferably about 800 tubes to about 1000 tubes, For example, it can have about 900 tubes. In some examples, each tube can have a length in the range of about 0.5 cm to about 2 cm, preferably about 0.8 cm to about 1.2 cm, for example about 1 cm. In other examples, each tube can have a diameter in the range of about 0.005 inches to about 0.05 inches, preferably about 0.01 inches to about 0.03 inches. In some examples, the tube is a hypodermic needle. The tube includes or is made from materials such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof.

  In one embodiment, each of the plurality of gas holes 732 on the diffusion plate 730 has a larger diameter than each of the plurality of gas holes 742 on the upper tube plate 740. Further, each of the plurality of gas holes 732 on the diffusion plate 730 has a larger diameter than each of the plurality of gas holes 752 on the lower diffusion plate. Each of the plurality of gas holes 742 on the upper tube plate 740 has the same or substantially the same diameter as each of the plurality of gas holes 752 on the lower tube plate 750.

  In one embodiment, the diffusion plate 730 includes or is made of a material such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof. The The diffuser plate 730 includes a number of holes in the range of about 20 holes to about 200 holes, preferably about 25 holes to about 75 holes, more preferably about 40 holes to about 60 holes. be able to. Each hole in the diffuser plate 730 can have a diameter in the range of about 0.005 inches to about 0.05 inches, preferably about 0.01 inches to about 0.03 inches. In another embodiment, the upper tube plate 740 and / or the lower tube plate 750 may be steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof, respectively. Or are made from such materials. Upper tube plate 740 and / or lower tube plate 750 may each have from about 500 holes to about 1500 holes, preferably from about 700 holes to about 1200 holes, more preferably from about 800 holes to about 1000 holes. have. Each hole in the upper tube plate 740 and / or the lower tube plate 750 has a diameter in the range of about 0.005 inches to about 0.05 inches, preferably about 0.01 inches to about 0.03 inches, respectively. Can have. In another embodiment, the showerhead assembly 700 is from about 10 holes / in 2 (number of holes per square inch) to about 60 holes / in 2, preferably from about 15 holes / in 2 to about 45 holes / in 2. Having a gas hole density and / or number of tubes in the range of inches, more preferably from about 20 holes / in 2 to about 36 holes / in 2.

  In one example, the upper surface of the upper portion 706 of the body 702 of the showerhead assembly 700 is a metal plate. In other examples, the showerhead assembly 700 can have a rectangular shape or a square shape. In another embodiment, the body 702 of the showerhead assembly 700 further includes a temperature adjustment system. A temperature regulation system, such as the temperature regulation system 190, can include a fluid path 718 that extends into the body 702 and can have an inlet 714 a and an outlet 714 b that are in fluid communication with the fluid path 718. . Inlet 714a and outlet 714b are each coupled to a fluid at least one heat exchanger, such as heat exchanger 180a, 180b or 180c in liquid reservoir or temperature control system 190, as shown in FIG. 1F. Communicate.

  8A-8D show an exhaust assembly 800 for a deposition chamber, such as reactor 100, according to embodiments described herein. In one embodiment, the exhaust assembly 800 includes a body 802 having an upper portion 806 and a lower portion 804 and a central channel 816 extending through the upper portion 806 and the lower portion 804 of the body 802. Upper portion 806 includes an upper surface 807. The central channel 816 extends between the inner surface 809 of the main body 802 and parallel to the central axis 801 extending through the main body 802. The diffusion plate 830 includes a plurality of gas holes 832 and is disposed within the central channel 816. In one example, the diffuser plate 830 is disposed on a flange or protrusion 810. In another example, the exhaust assembly 800 does not include an optional diffuser plate 830 disposed therein.

  The exhaust assembly 800 further includes an upper tube plate 840 having a plurality of gas holes 842 and disposed within the central channel 816 and below the diffusion plate 830. The exhaust assembly 800 also includes a lower tube plate 850 having a plurality of gas holes 854 and disposed within the central channel 816 and below the upper tube plate 840. A plurality of exhaust tubes 880 extend from the upper tube plate 840 to the lower tube plate 850, and each tube is connected to an individual hole from the plurality of gas holes 842 and an individual hole from the plurality of gas holes 854. Fluid communication. Each of the exhaust tubes 880 extend parallel to or substantially parallel to each other, in many embodiments described herein, as well as to the central axis 801. In an alternative embodiment not shown, each of the exhaust tubes 880 extends at a predetermined angle with respect to the central axis 801 within the range of about 1 ° to about 15 ° or more.

  The exhaust assembly 800 draws a vacuum to reduce the internal pressure through the exhaust port 822 and cavities 838, 848 and 858. A cavity 838 is formed between the top plate 820 and the diffusion plate 830 in the central channel 816. A cavity 848 is formed in the central channel 816 between the diffusion plate 830 and the upper tube plate 840. A cavity 858 is formed in the central channel 816 between the upper tube plate 840 and the lower tube plate 850.

  In another embodiment, the exhaust assembly 800 includes a body 802 that includes an upper portion 806 and a lower portion 804, the upper portion 806 including a flange extending over the lower portion 804, and the upper portion 806 and the lower portion 804 of the body 802. A central channel 816 extending parallel to the central axis 801 extending through the body 802 and a diffusion plate 830 disposed within the central channel 816 and including a plurality of gas holes 832, An upper tube plate 840 that includes a plurality of gas holes 842 and is disposed within the central channel 816 and below the diffusion plate 830; and a plurality of gas holes 854 that are within the central channel 816 and that are within the upper tube plate 840. Lower tube plate 850 arranged below and upper tube plate 840 to lower tube plate 85 To the extend, each tube contains a plurality of gas tubes 880 in fluid communication in conjunction with individual holes from each hole and the gas hole 854 from a plurality of gas holes 842, the.

  In another embodiment, the exhaust assembly 800 includes an upper portion 806 and a lower portion 804, the upper portion 806 extends beyond the lower portion 804 and adjacent to the central axis 801 of the body 802, and the lower portion 804 extends beyond the upper portion 806. A central channel 816 that extends parallel to the central axis 801 between an inner surface 809 of the main body 802 via a main body 802 that extends parallel to the central axis 801 of the main body 802 and an upper portion 806 and a lower portion 804 of the main body 802. A diffusion plate 830 including a plurality of gas holes 832 and disposed within the central channel 816; and an upper tube plate including a plurality of gas holes 842 and disposed within the central channel 816 and below the diffusion plate 830. 840 and a plurality of gas holes 854 and disposed within the central channel 816 and below the upper tube plate 840 A side tube plate 850, a plurality of tubes extending from the upper tube plate 840 to the lower tube plate 850, each tube being in fluid communication with an individual hole from the plurality of gas holes 842 and an individual hole from the gas holes 854 The exhaust tube 880 is included.

  In another embodiment, the exhaust assembly 800 extends through the body 802 between the body 802 including the upper portion 806 and the lower portion 804 and the inner surface 809 of the body 802 via the upper portion 806 and the lower portion 804 of the body 802. A central channel 816 extending parallel to the central axis 801, a plurality of gas holes 832, a diffusion plate 830 disposed in the central channel 816, and a plurality of gas holes 842, and within the central channel 816. An upper tube plate 840 disposed under the diffusion plate 830 and a lower tube plate 850 including a plurality of gas holes 854 and disposed within the central channel 816 and below the upper tube plate 840. It is out.

  In another embodiment, the exhaust assembly 800 extends through the body 802 between the body 802 including the upper portion 806 and the lower portion 804 and the inner surface 809 of the body 802 via the upper portion 806 and the lower portion 804 of the body 802. A central channel 816 extending parallel to the central axis 801, a plurality of gas holes 832, an upper tube plate 840 disposed within the central channel 816 and below the diffusion plate 830, and a plurality of gas holes 842 A lower tube plate 850 disposed within the central channel 816 and below the upper tube plate 840, and extending from the upper tube plate 840 to the lower tube plate 850, each tube extending from a plurality of gas holes 832 And a plurality of gas tubes in fluid communication with the individual holes and the individual holes from the plurality of gas holes 842. It includes the 880, the.

  In some embodiments, the exhaust assembly 800 is a modular showerhead assembly. Upper portion 806 and lower portion 804 of body 802 can each include materials such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof. In one example, the upper portion 806 and the lower portion 804 of the body 802 each include stainless steel or an alloy thereof.

  In one embodiment, the exhaust assembly 800 includes an exhaust outlet 860 disposed at the top 806 of the body 802. The upper plate 820 is disposed on the upper surface of the upper portion 806 of the main body 802, and the exhaust outlet 860 is disposed on the plate. The plate can include materials such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof. In some examples, the plate has an exhaust port 822 extending therethrough. The exhaust outlet 860 has an exhaust outlet tube 864 that extends through the exhaust port 822. The inlet nozzle 862 is connected to one end of the exhaust outlet tube 864 and is disposed above the plate. In another example, the upper surface of the upper portion 806 of the showerhead body has a groove 808 that includes a central channel 816. An O-ring may be disposed in the groove 808. The diffusion plate 830 is disposed on a protrusion or flange that protrudes from the side surface of the main body 802 in the central channel 816.

  In one embodiment, the plurality of gas tubes 880 are in the range of about 5 tubes to about 50 tubes, preferably about 7 tubes to about 30 tubes, more preferably about 10 tubes to about 20 tubes, For example, it can have about 14 tubes. In some examples, each tube can have a length in the range of about 0.5 cm to about 2 cm, preferably about 0.8 cm to about 1.2 cm, for example about 1 cm. In other examples, each tube may have a diameter in the range of about 0.1 inch to about 0.4 inch, preferably about 0.2 inch to about 0.3 inch, for example 0.23 inch. it can. In one example, the exhaust assembly 800 includes a single row of tubes and holes.

  In one embodiment, the plurality of gas tubes 880 is in the range of about 500 tubes to about 1500 tubes, preferably about 700 tubes to about 1200 tubes, more preferably about 800 tubes to about 1000 tubes, For example, it can have about 900 tubes. In some examples, each tube can have a length in the range of about 0.5 cm to about 2 cm, preferably about 0.8 cm to about 1.2 cm, for example about 1 cm. In other examples, each tube can have a diameter in the range of about 0.005 inches to about 0.05 inches, preferably about 0.01 inches to about 0.03 inches.

  In some examples, the tube is a hypodermic needle. The tube includes or is made from materials such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof.

  In one embodiment, each of the plurality of gas holes 832 on the diffusion plate 830 has a larger diameter than each of the plurality of gas holes 842 on the upper tube plate 840. Further, each of the plurality of gas holes 832 on the diffusion plate 830 has a larger diameter than each of the plurality of gas holes 854 on the lower diffusion plate. In addition, each of the plurality of gas holes 842 on the upper tube plate 840 has the same or substantially the same diameter as each of the plurality of gas holes 854 on the lower tube plate 850.

  In one embodiment, the diffuser plate 830 includes or is made of a material such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof. The In another embodiment, the diffuser plate 830 has a number in the range of about 5 holes to about 50 holes, preferably about 7 holes to about 30 holes, more preferably about 10 holes to about 20 holes. Of holes. Each hole in the diffuser plate 830 can have a diameter in the range of about 0.1 inches to about 0.4 inches, preferably about 0.2 inches to about 0.3 inches, for example 0.23 inches. . In one example, the diffuser plate 830 includes a single row of holes. In another embodiment, the diffuser plate 830 has a number in the range of about 20 holes to about 200 holes, preferably about 25 holes to about 55 holes, more preferably about 40 holes to about 60 holes. Of holes. Each hole in the diffuser plate 830 can have a diameter in the range of about 0.005 inches to about 0.05 inches, preferably about 0.01 inches to about 0.03 inches.

  In another embodiment, the upper tube plate 840 and / or the lower tube plate 850 are steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof, respectively. Or are made from such materials. In one embodiment, upper tube plate 840 and / or lower tube plate 850 each have from about 5 holes to about 50 holes, preferably from about 7 holes to about 30 holes, more preferably about 10 holes. There are 14 holes in the range of about 20 holes. The respective holes in the upper tube plate 840 and / or the lower tube plate 850 are each in the range of about 0.1 inch to about 0.4 inch, preferably about 0.2 inch to about 0.3 inch, for example It can have a diameter of 0.23 inches. In another embodiment, the exhaust assembly 800 is from about 5 holes / in 2 (number of holes per square inch) to about 30 holes / in 2, preferably from about 8 holes / in 2 to about 25 holes / in 2. And more preferably has a gas pore density and / or number of tubes in the range of about 10 holes / in 2 to about 20 holes / in 2.

  In another embodiment, upper tube plate 840 and / or lower tube plate 850 each have from about 500 holes to about 1500 holes, preferably from about 700 holes to about 1200 holes, more preferably about 800 holes. The hole has about 1000 holes. Each hole in upper tube plate 840 and / or lower tube plate 850 has a diameter in the range of about 0.005 inches to about 0.05 inches, preferably about 0.01 inches to about 0.03 inches, respectively. Can have.

  In one example, the top surface of the upper portion 806 of the body 802 of the isolator assembly 800 is a metal plate. In other examples, the exhaust assembly 800 can have a rectangular shape or a square shape. In another embodiment, the body 802 of the exhaust assembly 800 further includes a temperature regulation system. A temperature regulation system, such as temperature regulation system 190, can include a fluid path 818 that extends into body 802 and can have an inlet 814 a and an outlet 814 b that are coupled to and in fluid communication with fluid path 818. Inlet 814a and outlet 814b are each coupled to at least one heat exchanger, such as heat exchanger 180a, 180b or 180c in liquid reservoir or temperature control system 190, as shown in FIG. Communicate.

  In another embodiment, the exhaust assembly 800 utilized in the deposition chamber is between a body 802 that includes an upper portion 806 and a lower portion 804 and an inner surface 809 of the body 802 via the upper portion 806 and the lower portion 804 of the body 802. A central channel 816 extending parallel to the central axis 801 extending through the body 802, an exhaust outlet 860 disposed at the top 806 of the body 802, and a plurality of gas holes 832 are disposed within the central channel 816. A diffuser plate 830, a plurality of gas holes 842, and an upper tube plate 840 disposed within the central channel 816 and below the diffuser plate 830, and a plurality of gas holes 852 within the central channel 816. A lower tube plate 850 disposed under the upper tube plate 840, and an upper tube plate 840 A plurality of exhaust tubes 880 extending in fluid communication with the individual holes from the plurality of gas holes 842 and in communication with the respective holes from the gas holes 852. Yes.

  The exhaust assembly 800 includes an upper plate 820 disposed on the upper portion 806 of the body 802. The exhaust outlet 860 is disposed in the upper plate 820. The top plate 820 can include or be made of materials such as steel, stainless steel, 300 series stainless steel, iron, nickel, chromium, molybdenum, aluminum, alloys thereof, or combinations thereof. The top plate 820 typically has an exhaust port extending therethrough. The exhaust outlet 860 has an exhaust outlet tube 864 that extends through the exhaust port 822. In one example, the exhaust nozzle 862 is connected to one end of the exhaust outlet tube 864 and is disposed above the upper plate 820. In another example, the upper surface of the upper portion 806 of the exhaust assembly body has a groove 808 that includes a central channel 816. An O-ring may be disposed in the groove 808. The diffusion plate 830 is disposed on a protrusion or flange that protrudes from the side surface of the main body 802 in the central channel 816.

  9A-9F illustrate a reactor system 1000, a CVD system that includes a plurality of reactors 1100a, 1100b, and 1100c, as described in the embodiments herein. Reactors 1100a, 1100b, and 1100c may be the same reactor as reactor 100, or may be a modified derivative of reactor 100. In one embodiment, the reactor 1100a is coupled to a reactor 1100b that is coupled to the reactor 1100c, as shown in FIGS. 9A-9C. One end of the reactor 1100a is connected to the end cap 1050 at the interface 1012 while the other end of the reactor 1100a is connected to one end of the reactor 1100b at the interface 1014. The other end of the reaction apparatus 1100b is connected to one end of the reaction apparatus 1100c through an interface 1016 while the other end of the reaction apparatus 1100c is connected to the end plate 1002 through an interface 1016.

  9D-9F show an enlarged view of the portion of interface 1018 between reactors 1100b and 1100c. In another embodiment, the reactor 1100b includes a wafer carrier track 1400 having a lower lap joint 1450 and the reactor 1100c includes a wafer carrier track having an upper lap joint 1440.

  The exhaust purge port 1080 is disposed between the wafer carrier track 1400 in the reaction apparatus 1100b and the wafer carrier track 1400 in the reaction apparatus 1100c. The exhaust purge port 1080 is in fluid communication with a path 1460 that extends from the exhaust purge port 1080 to the wafer carrier track 1400. Similar to the exhaust assembly 800, the exhaust assembly 1058 is disposed on the reactor lid assembly of the reactor 1100b. The exhaust assembly 1058 is used to remove gas from the exhaust purge port 1080. The exhaust assembly 1058 includes an exhaust outlet 1060, an exhaust nozzle 1062 and an exhaust tube 1064.

  In another embodiment, the reactor system 1000 can include additional reactors (not shown) in addition to the reactors 1100a, 1100b, and 1100c. In one example, a fourth reactor is included in the reactor system 1000. In another example, a fifth reactor is included in the reactor system 1000. In different configurations and embodiments, the reactor system 1000 includes 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 or more reactors. In other embodiments, reactors 1100a, 1100b and 1100c or other reactors not shown include 1, 2, 3, 4 or more showerhead assemblies in each reactor (not shown). be able to.

  In alternative embodiments described herein, other configurations of reactors 1100a, 1100b, and 1100c are provided, but are not illustrated in the drawings. In one embodiment, each of the reactors 1100a, 1100b or 1100c can include three exhaust assemblies separated by two showerhead assemblies, and any of the reactor lid assemblies can be One exhaust assembly, a first showerhead assembly, a second exhaust assembly, a second showerhead assembly, and a third exhaust assembly. In another embodiment, each of the reactors 1100a, 1100b, or 1100c can include three isolator assemblies separated by two showerhead assemblies, wherein the reactor lid assembly is in series with the first An isolator assembly, a first showerhead assembly, a second isolator assembly, a second showerhead assembly, and a third isolator assembly are included.

  In another embodiment, each of the reactors 1100a, 1100b or 1100c can include two isolator assemblies and one exhaust assembly separated by two showerhead assemblies, and any of the reactor lid assemblies Can include, in succession, a first isolator assembly, a first showerhead assembly, a second isolator assembly, a second showerhead assembly, and a first exhaust assembly. In another example, any of the reactor lid assemblies are sequentially connected to a first isolator assembly, a first showerhead assembly, a first exhaust assembly, a second showerhead assembly, and a second An isolator assembly can be included. In another example, any of the reactor lid assemblies are sequentially connected to a first exhaust assembly, a first showerhead assembly, a first isolator assembly, a second showerhead assembly, and a second An isolator assembly can be included.

  In another embodiment, each of reactors 1100a, 1100b, or 1100c can include two exhaust assemblies and one isolator assembly separated by two showerhead assemblies, and any of the reactor lid assemblies Can include, in succession, a first exhaust assembly, a first showerhead assembly, a second exhaust assembly, a second showerhead assembly, and a first isolator assembly. In another example, any of the reactor lid assemblies are sequentially connected to a first exhaust assembly, a first showerhead assembly, a first isolator assembly, a second showerhead assembly, and a second An exhaust assembly may be included. In another example, any of the reactor lid assemblies are sequentially connected to a first isolator assembly, a first showerhead assembly, a first exhaust assembly, a second showerhead assembly, and a second An exhaust assembly may be included.

  Reactor 100, reactor system 1000, and derivatives of these reactors are used to form various materials on a wafer or substrate, as described in the embodiments herein, by CVD, Used for various purposes in MOCVD and / or epitaxial deposition processes. In one embodiment, a III / V comprising at least one group III element (eg, boron, aluminum, gallium, or indium) and at least one group V element (eg, nitrogen, phosphorus, arsenic, or antimony). Group materials can be formed or deposited on the wafer. Examples of vapor deposition materials can include gallium nitride, indium phosphide, gallium indium phosphide, gallium arsenide, aluminum gallium arsenide, derivatives thereof, alloys thereof, multilayers thereof, or combinations thereof. In some embodiments shown herein, the deposition material may be an epitaxial material. The deposited material or epitaxial material can include one layer, but usually includes multiple layers. In some examples, the epitaxial material includes a layer having gallium arsenide and another layer having aluminum gallium arsenide. In another example, the epitaxial material includes a gallium arsenide buffer layer, an aluminum gallium arsenide passivation layer, and a gallium arsenide active layer. The gallium arsenide buffer layer has a thickness in the range of about 100 nm to about 500 nm, for example about 300 nm, and the aluminum gallium arsenide passivation layer has a thickness in the range of about 10 nm to about 50 nm, for example 30 nm, The arsenic active layer has a thickness in the range of about 500 nm to about 2000 nm, for example about 1000 nm. In some examples, the epitaxial material further includes a second aluminum gallium arsenide passivation layer.

  In one embodiment, the process gas used in reactor 100 or reactor system 1000 can include arsine, argon, helium, nitrogen, hydrogen, or mixtures thereof. In one example, the process gas includes an arsenic precursor, such as arsine. In other embodiments, the first precursor can include an aluminum precursor, a gallium precursor, an indium precursor, or a combination thereof, and the second precursor is a nitrogen precursor, Phosphorus precursors, arsenic precursors, antimony precursors, or combinations thereof may be included.

  In one embodiment, the CVD reactor can be configured to supply nitrogen to the reactor to float the substrate along the reactor track at the inlet and outlet. The hydrogen / arsine mixture can also be used to float the substrate along the CVD reactor track between the outlet and the inlet. Stages along the track are: inlet nitrogen separation zone, preheated exhaust, hydrogen / arsine mixed preheat separation zone, gallium arsenide deposition zone, gallium arsenide discharge, aluminum gallium arsenide deposition zone, gallium arsenide N layer deposition zone, Gallium arsenide P layer deposition zone, phosphorus hydrogen arsine separation zone, first phosphorus, aluminum gallium arsenide deposition zone, phosphorus aluminum gallium arsenide exhaust, second phosphorus aluminum gallium arsenide deposition zone, hydrogen / arsine mixture cool It includes a down separation zone, a cool down exhaust, and an outlet nitrogen separation zone. The temperature of the substrate passing through the reactor can be increased while passing through the inlet separation zone, can be maintained while passing through the zone, or can be decreased while approaching the arsine cooldown separation zone. be able to.

  In another embodiment, the CVD reactor can be configured to supply nitrogen to the reactor to float the substrate along the reactor track at the inlet and outlet. The hydrogen / arsine mixture can also be used to float the substrate along the CVD reactor track between the outlet and the inlet. Stages along the track include inlet nitrogen separation zone, preheated exhaust, hydrogen / arsine mixed preheated separation zone, exhaust, vapor deposition zone, exhaust, hydrogen / arsine mixture cool down separation zone, cool down exhaust, and outlet nitrogen separation zone Can be included. The temperature of the substrate passing through the reactor system should be increased while passing through the inlet separation zone, maintained while passing through the deposition zone, or decreased while approaching the arsine cooldown separation zone. Can do.

  In another embodiment, the CVD reactor can be configured to supply nitrogen to the reactor to float the substrate along the reactor track at the inlet and outlet. The hydrogen / arsine mixture can also be used to float the substrate along the CVD reactor track between the outlet and the inlet. The stage along the track consists of an inlet nitrogen separation zone, preheating with flow balance control, active hydrogen / arsine mixture separation zone, gallium arsenide deposition zone, aluminum gallium arsenide deposition zone, gallium isoarsenide N layer A deposition zone, a gallium arsenide P layer deposition zone, a phosphorous aluminum gallium arsenide deposition zone, a cool down exhaust, and an outlet nitrogen separation zone can be included. The temperature of the substrate passing through the reactor can be increased while passing through the inlet separation zone, maintained while passing through the deposition zone, or decreased while approaching cooldown exhaust.

  In another embodiment, the CVD reactor can be configured to supply nitrogen to the reactor to float the substrate along the reactor track at the inlet and outlet. The hydrogen / arsine mixture can also be used to float the substrate along the CVD reactor track between the outlet and the inlet. Stages along the track include inlet nitrogen separation zone, preheat with flow balance control, gallium arsenide deposition zone, aluminum gallium arsenide deposition zone, gallium arsenide N layer deposition zone, gallium arsenide P layer deposition zone , A deposition zone of phosphoraluminum gallium arsenide, a preheat with flow balance control, a cool-down exhaust with flow balance control, and an outlet nitrogen separation zone. The temperature of the substrate passing through the reactor can be increased while passing through the inlet separation zone, maintained while passing through the deposition zone, or decreased while approaching cooldown exhaust.

  FIG. 17 shows a seventh configuration 800. The CVD reactor can be configured to supply nitrogen to the reactor to float the substrate along the reactor track at the inlet and outlet. The hydrogen / arsine mixture can also be used to float the substrate along the CVD reactor track between the outlet and the inlet. Stages along the track can include an inlet nitrogen zone, a preheat exhaust, a deposition zone, a cool down exhaust, and an outlet nitrogen separation zone. The temperature of the substrate passing through the reactor can be increased while passing through the inlet separation zone, maintained while passing through the deposition zone, or decreased while approaching cooldown exhaust.

  In one embodiment, the CVD reactor is adapted to epitaxially grow a double heterostructure comprising gallium arsenide material and aluminum gallium arsenide material, as well as epitaxially growing a laterally grown sacrificial layer comprising aluminum arsenic material. Can be configured. In some examples, gallium arsenide, aluminum gallium arsenide, and aluminum arsenic can be deposited at a rate of about 1 μm / min. In some embodiments, the CVD reactor can have a throughput of about 6 to about 10 per minute.

In an embodiment, the CVD reactor can be configured to provide a substrate deposition rate of 10 cm × 10 cm per minute. In one embodiment, the CVD reactor may be configured to provide a 300 nm gallium arsenide buffer layer. In one embodiment, the CVD reactor may be configured to provide a 30 nm aluminum gallium arsenide passivation layer. In one embodiment, the CVD reactor can be configured to provide a 1000 nm gallium arsenide active layer. In one embodiment, the CVD reactor may be configured to provide a 30 nm aluminum gallium arsenide passivation layer. In one embodiment, the CVD reactor may be configured to provide a dislocation density of less than 1 × 10 4 per square centimeter, a luminous efficiency of 99%, and a photoluminescence lifetime of 250 nanoseconds.

In one embodiment, the CVD reactor includes an epitaxial lateral growth layer having a thickness of 5 nm ± 0.5 nm; an etch greater than 1 × 10 6 ; a zero pinhole; and aluminum arsenic greater than 0.2 mm per hour It can be configured to provide an etch rate.

  In one embodiment, the CVD reactor provides a central axis of edge temperature non-uniformity of 10 ° C. or lower for temperatures of 300 ° C. or higher; a V-III ratio of 5 or lower; and a maximum temperature of 700 ° C. It can be configured as follows.

In one embodiment, the CVD reactor comprises a deposited layer having a 300 nm gallium arsenide buffer layer; a 5 nm aluminum arsenic sacrificial layer; a 10 nm aluminum gallium arsenide window layer; a 700 nm gallium arsenide 1 × 10 17 Si active layer; An aluminum gallium arsenide 1 × 10 19 CP + layer.

In one embodiment, the CVD reactor comprises a deposition layer having a 300 nm gallium arsenide buffer layer; a 5 nm aluminum arsenic sacrificial layer; a 10 nm gallium indium phosphide window layer; a 700 nm gallium arsenide 1 × 10 19 Si active layer; Gallium arsenide CP layer; 300 nm gallium indium phosphide P window layer; 20 nm gallium indium phosphide 1 × 10 29 P + tunnel junction layer; 20 nm gallium indium phosphide 1 × 10 20 N + tunnel junction layer; 30 nm aluminum gallium arsenide window 400 nm gallium indium phosphide N active layer; 100 nm gallium indium phosphide P active layer; 30 nm aluminum gallium arsenide P window; 300 nm gallium arsenide P + contact layer It can be configured to provide a deposition layer having a.

  While the foregoing description is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, which scope is Determined by range.

Claims (61)

  1. A chemical vapor deposition reactor:
    A reactor lid assembly disposed on the reactor body, the reactor lid assembly comprising:
    A first chamber comprising a first showerhead assembly and an isolator assembly disposed next to each other on a lid support, the first showerhead assembly further comprising:
    A body with an upper part and a lower part;
    A central channel extending through the upper and lower portions of the body between the inner surface of the body and parallel to a central axis extending through the body;
    A selective diffusion plate comprising a first plurality of holes and disposed within said central channel;
    An upper tube plate comprising a second plurality of holes and disposed within the central channel and below the selective diffusion plate;
    A lower tube plate comprising a third plurality of holes and disposed within the central channel and below the upper tube plate; and extending from the upper tube plate to the lower tube plate, A first chamber comprising: a tube; and a plurality of tubes in fluid communication with the individual holes from the second plurality of holes and the individual holes from the third plurality of holes; and the lid A support having a second showerhead assembly and an exhaust assembly disposed adjacent to each other, wherein the isolator assembly is disposed between the first and second showerhead assemblies, and the second showerhead assembly is A second chamber disposed between the isolator assembly and the exhaust assembly;
    A chemical vapor deposition reactor characterized by comprising:
  2.   The chemical vapor deposition reactor according to claim 1, wherein the reactor main body further comprises a wafer carrier disposed on a wafer carrier track, and the wafer carrier track comprises quartz.
  3.   The chemical vapor deposition reactor according to claim 2, wherein the wafer carrier is a floating wafer carrier disposed on a floating wafer carrier track.
  4.   The chemical vapor deposition reactor of claim 3, wherein the floating wafer carrier track is configured to flow gas through at least one recessed pocket disposed within a lower surface of the floating wafer carrier.
  5.   The chemical vapor deposition reactor of claim 1, wherein the reactor body further comprises a lamp assembly comprising a plurality of lamps disposed under the wafer carrier track.
  6.   The chemical vapor deposition reactor of claim 5, wherein the lamp assembly further comprises a reflector disposed under the plurality of lamps.
  7.   The chemical vapor deposition reactor of claim 6, wherein the reflector comprises gold or a gold alloy.
  8. A first faceplate disposed at one end of the main body of the reactor, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly. A second faceplate disposed at the other end of the reactor body, wherein the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. A second faceplate disposed;
    The chemical vapor deposition reactor according to claim 1, further comprising:
  9. It also has a temperature control system, which is:
    A first fluid path extending through the entire lid of the reactor and coupled to and in fluid communication with the first fluid path; and through the entire body of the reactor. A second fluid path including a second inlet and a second outlet extending and in fluid communication with the second fluid path;
    The chemical vapor deposition reactor according to claim 1, comprising:
  10.   The chemical vapor deposition reactor of claim 1, wherein the first showerhead assembly or the second showerhead assembly is a modular showerhead assembly.
  11.   The chemical vapor deposition reactor of claim 1, wherein the isolator assembly or the exhaust assembly is a modular isolator assembly.
  12. A chemical vapor deposition reactor:
    Comprising a reactor lid assembly disposed on the reactor body;
    The reactor lid assembly comprises a first showerhead assembly, an isolator assembly, a second showerhead assembly, and an exhaust assembly, which are arranged in a straight line next to each other on a lid support. Shower head assembly further:
    A body with an upper part and a lower part;
    A central channel extending through the upper and lower portions of the body between the inner surface of the body and parallel to a central axis extending through the body;
    A selective diffusion plate comprising a first plurality of holes and disposed within said central channel;
    An upper tube plate comprising a second plurality of holes and disposed within the central channel and below the selective diffusion plate;
    A lower tube plate comprising a third plurality of holes and disposed within the central channel and below the upper tube plate; and extending from the upper tube plate to the lower tube plate, A plurality of tubes in fluid communication with individual holes from the second plurality of holes and with individual holes from the third plurality of holes;
    The chemical vapor deposition characterized in that the reactor main body includes a floating wafer carrier disposed on a floating wafer carrier track, and a lamp assembly including a plurality of lamps and disposed under the wafer carrier track. Reactor.
  13. A first faceplate disposed at one end of the body of the reactor, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly. A second faceplate disposed at the other end of the reactor body, wherein the exhaust assembly is disposed between the second showerhead assembly and the second faceplate. A second faceplate disposed;
    The chemical vapor deposition reactor according to claim 12, further comprising:
  14. The chemical vapor deposition reactor further comprises a temperature control system, which is:
    A first fluid path extending through the entire lid of the reactor and coupled to and in fluid communication with the first fluid path; and through the entire body of the reactor. A second fluid path including a second inlet and a second outlet extending and in fluid communication with the second fluid path;
    The chemical vapor deposition reactor according to claim 12, comprising:
  15.   The chemical vapor deposition reactor of claim 12, wherein the first showerhead assembly or the second showerhead assembly is a modular showerhead assembly.
  16.   The chemical vapor deposition reactor of claim 12, wherein the isolator assembly or the exhaust assembly is a modular isolator assembly.
  17.   The chemical vapor deposition reactor of claim 12, wherein the lamp assembly further comprises a reflector disposed under the plurality of lamps.
  18.   The chemical vapor deposition reactor of claim 17, wherein the reflector comprises gold or a gold alloy.
  19.   The chemical vapor deposition reactor of claim 12, wherein the floating wafer carrier track is configured to flow gas through at least one recessed pocket disposed within a lower surface of the floating wafer carrier.
  20. A chemical vapor deposition reactor:
    A reactor lid assembly disposed on the reactor body, the reactor lid assembly comprising:
    A first chamber comprising a first showerhead assembly and an isolator assembly disposed next to each other on a lid support, the first showerhead assembly further comprising:
    A body with an upper part and a lower part;
    A central channel extending through the upper and lower portions of the body between the inner surface of the body and parallel to a central axis extending through the body;
    A selective diffusion plate comprising a first plurality of holes and disposed within said central channel;
    An upper tube plate comprising a second plurality of holes and disposed within the central channel and below the selective diffusion plate;
    A lower tube plate comprising a third plurality of holes and disposed within the central channel and below the upper tube plate; and extending from the upper tube plate to the lower tube plate, A first chamber comprising: a plurality of tubes in fluid communication with the individual holes from the second plurality of holes and the individual holes from the third plurality of holes;
    A second chamber comprising a second showerhead assembly and an exhaust assembly disposed adjacent to the lid support, wherein the isolator assembly is disposed between the first and second showerhead assemblies; and A temperature comprising: at least one fluid path extending through the entire lid support of the reactor; and at least one first inlet and at least one first outlet coupled to and in fluid communication with the fluid flow path. Control system;
    A chemical vapor deposition reactor characterized by comprising:
  21.   21. The chemical vapor deposition reactor of claim 20, wherein the reactor body further comprises a wafer carrier disposed on a wafer carrier track, and the wafer carrier track comprises quartz.
  22.   The chemical vapor deposition reaction apparatus according to claim 21, wherein the wafer carrier is a floating wafer carrier disposed on a floating wafer carrier track.
  23.   23. The chemical vapor deposition reactor of claim 22, wherein the floating wafer carrier track is configured to flow gas into at least one recessed pocket disposed in a lower surface of the floating wafer carrier.
  24.   21. The chemical vapor deposition reactor of claim 20, wherein the reactor body further comprises a lamp assembly comprising a plurality of lamps disposed under the wafer carrier track.
  25.   The chemical vapor deposition reactor of claim 24, wherein the lamp assembly further comprises a reflector disposed under the plurality of lamps.
  26.   The chemical vapor deposition reactor of claim 25, wherein the reflector comprises gold or a gold alloy.
  27. A first faceplate disposed at one end of the main body of the reactor, wherein the first showerhead assembly is disposed between the first faceplate and the isolator assembly. A second faceplate disposed at the other end of the reactor body, wherein the exhaust assembly is between the second showerhead assembly and the second faceplate. A second faceplate disposed on the surface;
    The chemical vapor deposition reactor according to claim 20, further comprising:
  28. Temperature control system:
    A first fluid path extending through the entire lid of the reactor and coupled to and in fluid communication with the first fluid path; and through the entire body of the reactor. A second fluid path including a second inlet and a second outlet extending and in fluid communication with the second fluid path;
    The chemical vapor deposition reactor according to claim 20, further comprising:
  29.   21. The chemical vapor deposition reactor of claim 20, wherein the first showerhead assembly or the second showerhead assembly is a modular showerhead assembly.
  30.   21. The chemical vapor deposition reactor of claim 20, wherein the isolator assembly or the exhaust assembly is a modular isolator assembly.
  31. A method for processing a wafer in a deposition reactor comprising:
    At least one wafer disposed on the wafer carrier is heated by exposing a lower surface of the wafer carrier track to radiation emitted from the lamp assembly, and the wafer carrier is disposed on the wafer carrier track in a deposition reactor. And;
    Maintaining the reactor lid assembly at a first temperature and maintaining the reactor body assembly at a second temperature such that the liquid and the path are in fluid communication with a temperature control system. Flowing at least one liquid through a path extending through the reactor lid assembly and the reactor body assembly;
    Traverses the wafer carrier along the wafer carrier track through a first chamber having a first showerhead assembly and an isolator assembly;
    Exposing the wafer to a first mixture of gaseous precursors flowing from the first showerhead while depositing a first material;
    Exposing the wafer to a process gas flowing from the isolator assembly;
    Traversing the wafer carrier along the wafer carrier track through a second chamber having a second showerhead assembly and an exhaust assembly;
    Exposing the wafer to a second mixture of gaseous precursors flowing from the second showerhead while depositing a second material;
    Removing gas from the deposition reactor through the exhaust assembly;
    A method characterized by that.
  32.   32. The method of claim 31, wherein each of the first temperature and the second temperature is a temperature within a range of about 275 ° C to about 325 ° C.
  33.   35. The method of claim 32, wherein each of the first temperature and the second temperature is a temperature within a range of about 290 degrees Celsius to about 310 degrees Celsius.
  34.   34. The method of claim 33, wherein each of the first temperature and the second temperature is a temperature of about 300 degrees Celsius.
  35.   32. The method of claim 31, wherein a reflector is disposed below the lamp assembly.
  36.   36. The method of claim 35, wherein the lower surface of the wafer carrier track is exposed to radiation emitted from the lamp assembly and reflected from the reflector.
  37.   36. The method of claim 35, wherein the reflector comprises gold or a gold alloy.
  38.   32. The method of claim 31, further comprising levitating the wafer carrier from the wafer carrier track and traversing the wafer carrier along the wafer carrier track.
  39.   40. The method of claim 38, further comprising levitating the wafer carrier by exposing a lower surface of the wafer carrier to a floating gas flowing from a plurality of holes disposed on an upper surface of the wafer carrier track.
  40.   32. The method of claim 31, wherein the process gas comprises a gas selected from arsine, argon, helium, nitrogen, hydrogen, or mixtures thereof.
  41.   41. The method of claim 40, wherein the process gas comprises arsine.
  42.   32. The method of claim 31, wherein the first precursor comprises an aluminum precursor, a gallium precursor, an indium precursor, or a mixture thereof.
  43.   43. The method of claim 42, wherein the second precursor comprises a nitrogen precursor, a phosphorus precursor, an arsenic precursor, an antimony precursor, or a mixture thereof.
  44. A method for processing a wafer in a deposition reactor comprising:
    Flowing a floating gas into a cavity in the wafer carrier track from a plurality of holes disposed in an upper surface of the wafer carrier track in a deposition reactor;
    Exposing the lower surface of the wafer carrier to a floating gas flowing from a hole to float the wafer carrier from the wafer carrier track, wherein the upper surface of the wafer carrier is at least one wafer;
    Heating the wafer and the wafer carrier to a predetermined temperature by exposing a lower surface of the wafer carrier track to radiation emitted from a lamp assembly;
    Traversing the wafer carrier along the wafer carrier track through at least two chambers, wherein the first chamber comprises a first showerhead assembly and an isolator assembly, the second chamber being a second shower A head assembly and an exhaust assembly;
    A method characterized by that.
  45.   45. The method of claim 44, wherein the predetermined temperature is a temperature in the range of about 275 ° C to about 325 ° C.
  46.   46. The method of claim 45, wherein the predetermined temperature is a temperature within a range of about 290.degree. C. to about 310.degree.
  47.   47. The method of claim 46, wherein the predetermined temperature is a temperature of about 300 degrees Celsius.
  48.   45. The method of claim 44, wherein a reflector is disposed below the lamp assembly.
  49.   49. The method of claim 48, wherein the lower surface of the wafer carrier track is exposed to radiation emitted from the lamp assembly and reflected from the reflector.
  50.   49. The method of claim 48, wherein the reflector comprises gold or a gold alloy.
  51.   45. The method of claim 44, wherein the process gas comprises a gas selected from the group consisting of arsine, argon, helium, nitrogen, hydrogen, or mixtures thereof.
  52.   52. The method of claim 51, wherein the process gas comprises arsine.
  53.   45. The method of claim 44, wherein the first precursor comprises an aluminum precursor, a gallium precursor, an indium precursor, or a mixture thereof.
  54.   54. The method of claim 53, wherein the second precursor comprises a nitrogen precursor, a phosphorus precursor, an arsenic precursor, an antimony precursor, or a mixture thereof.
  55. A method for processing a wafer in a deposition reactor comprising:
    Exposing the lower surface of the wafer carrier track to radiation emitted from the lamp assembly heats at least one wafer disposed on the wafer carrier, wherein the wafer carrier is disposed on the wafer carrier track in a deposition reactor. Has been;
    Through the deposition reactor lid assembly or reactor body assembly such that the reactor lid assembly or the reactor body assembly is maintained at a predetermined temperature and the liquid and the path are in fluid communication with a temperature control system. Flowing liquid through an extended path;
    Traversing the wafer carrier along the wafer carrier track through at least two chambers, wherein the first chamber comprises a first showerhead assembly and an isolator assembly, the second chamber being a second showerhead An assembly and an exhaust assembly;
    Removing gas from the deposition reactor through the exhaust assembly;
    A method characterized by that.
  56.   56. The method of claim 55, wherein the predetermined temperature of the reactor lid assembly is a temperature within a range of about 275 ° C to about 325 ° C.
  57.   57. The method of claim 56, wherein the predetermined temperature of the reactor lid assembly is a temperature in the range of about 290 ° C to about 310 ° C.
  58.   58. The method of claim 57, wherein the predetermined temperature of the reactor lid assembly is a temperature of about 300 <0> C.
  59.   56. The method of claim 55, wherein the predetermined temperature of the reactor body assembly is a temperature within a range of about 275 ° C to about 325 ° C.
  60.   60. The method of claim 59, wherein the predetermined temperature of the reactor body assembly is a temperature within a range of about 290 ° C to about 310 ° C.
  61.   61. The method of claim 60, wherein the predetermined temperature of the reactor body assembly is a temperature of about 300 <0> C.
JP2012500902A 2009-03-16 2010-03-16 Vapor deposition reactor system and method Pending JP2012521093A (en)

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US16070309P true 2009-03-16 2009-03-16
US16070009P true 2009-03-16 2009-03-16
US61/160,700 2009-03-16
US61/160,694 2009-03-16
US61/160,696 2009-03-16
US61/160,701 2009-03-16
US61/160,699 2009-03-16
US61/160,690 2009-03-16
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