JPS61253822A - Manufacturing device for compound semiconductor thin film - Google Patents
Manufacturing device for compound semiconductor thin filmInfo
- Publication number
- JPS61253822A JPS61253822A JP9558785A JP9558785A JPS61253822A JP S61253822 A JPS61253822 A JP S61253822A JP 9558785 A JP9558785 A JP 9558785A JP 9558785 A JP9558785 A JP 9558785A JP S61253822 A JPS61253822 A JP S61253822A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gas ejection
- plate
- compound semiconductor
- ejection plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
ＧａＡｓ ｅ ＩｎＰ等の化合物半導体薄膜のエピタキ
シャル成長薄膜の製造装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to an apparatus for manufacturing an epitaxially grown thin film of a compound semiconductor such as GaAs e InP.
（従来の技術）
ＧａＡｇ 、 ＩｎＰ等の化合物半導体薄膜のエピタキ
シャル成長法としての有機金属化合物熱分解法（以下Ｍ
Ｏ−ＣＶＤ法という）は、原料物質輸送律則で組成およ
び成長速度の制御が可能であること、非可逆反応であシ
基板のエッチ作用の悪影響がないこと等の基本的な特徴
を持っておシ、光半導対デバイス、超高周波、超高速デ
バイスのだめの基幹技術として最近非常に注目されてい
る。しかし、各種原料ガスの基板結晶面への輸送の不均
一性の改善が大きな課題になっている。(Prior art) Organometallic compound thermal decomposition method (hereinafter referred to as M
O-CVD (O-CVD method) has basic characteristics such as being able to control the composition and growth rate using the raw material transport law, being an irreversible reaction, and having no adverse effects from etching the substrate. Recently, it has been attracting a lot of attention as a core technology for optical semiconductor devices, optical semiconductor couplers, ultra-high frequency, and ultra-high speed devices. However, improving the non-uniformity of transport of various source gases to the substrate crystal plane has become a major issue.
第３図は、ＭＯ−ＣＶＤ法における従来の装置の代表的
な構成図であって、石英ガラス製の反応塔３１の外壁は
水冷のために二重構造とし、３２および３３はその流水
口および排水口である。石英ガラス爬の支柱３４で支持
されたカーボンペデスタル３５と該ペデスタル上に搭載
した化合物半導体基板結晶３７は、高周波誘導線輪３６
により轟
６００−８００℃に高周波誘導加熱さ−る。エピタキシ
ャル成長に関与する■族元素の有機金属化合物ガス、■
族元素の水素化物ガスおよびキャリヤガスは、ガス供給
口３８から供給され、石英ガラス製のメツシュ板４０で
仕切られた混合空間４１で拡散混合され、該メツシュ板
のメツジュロ４２から流出する。３９はエピタキシャル
成長の反応過程を経過した排ガスを流出させるだめの排
ガス口である。かかるエピタキシャル成長における基板
結晶面内の均一性の改善策としての従来技術としては、
該カーボンペデスタルの支柱３４を回転させることが試
みられている。参考文献：ジャーナル藝オプ・クリスタ
ル番グロース（Ｊｏｕｒｎａｌ ｏｆＣｒｙｓｔａｌ
Ｇｒｏｗｔｈ ）、Ｐ 、 Ｄ 、 Ｄａｐｋｕｓ 、
ｅｔｃ、 ５５ ｔ １０−２３、（１９８１）
（発明が解決しようとする問題点）
上記従来の製造装置では、以下の理由によシ反応塔内で
の各種ガスが定常的なガス流路となシ、単にペデスタル
を回転するのみによる基板面内でのエピタキシャル成長
の均一化には限界があるという重大々欠的を持っている
。すなわち、ＭＯ−ＣＶＤ法によるエピタキシャル成長
は、主として■族元素のガスの供給律則で成長速度が定
まり、不純物元素のガスの供給量によシミ気侭導度が定
まる性質があシ、結晶表面付近でのこれらのガス流の状
態が成長層の均一性に大きな影響を与えておシ、反応塔
内のガス流の状態と基板結晶との相対的な関係が極めて
重要となる。反応塔内のエピタキシャル成長時のガス流
は、高温度のペデスタルの庭めに、被デスタル周辺のガ
スの温度は上昇して上昇気流を生じ、結果としてかなシ
の対流を起している状態で定常的なガス流路が形成され
ている。FIG. 3 is a typical configuration diagram of a conventional apparatus for the MO-CVD method, in which the outer wall of a reaction tower 31 made of quartz glass has a double structure for water cooling, and 32 and 33 are its water inlets and It is a drain. A carbon pedestal 35 supported by a quartz glass strut 34 and a compound semiconductor substrate crystal 37 mounted on the pedestal are connected to a high frequency guide ring 36.
High frequency induction heating is carried out to 600-800°C. Organometallic compound gas of ■ group elements involved in epitaxial growth, ■
The group element hydride gas and the carrier gas are supplied from the gas supply port 38, diffused and mixed in a mixing space 41 partitioned by a mesh plate 40 made of quartz glass, and flow out from the mesh plate 42 of the mesh plate. Reference numeral 39 is an exhaust gas port through which the exhaust gas that has undergone the reaction process of epitaxial growth is discharged. Conventional techniques for improving the uniformity within the substrate crystal plane in such epitaxial growth include:
Attempts have been made to rotate the carbon pedestal struts 34. References: Journal of Crystal Growth
Growth), P, D, Dapkus,
etc., 55 t 10-23, (1981) (Problems to be Solved by the Invention) In the above-mentioned conventional production equipment, various gases in the reaction tower do not flow in a steady gas flow path for the following reasons. However, there is a serious drawback in that there is a limit to the uniformity of epitaxial growth within the substrate plane simply by rotating the pedestal. In other words, in epitaxial growth by the MO-CVD method, the growth rate is mainly determined by the supply law of the gas of the group Ⅰ element, and the degree of stain conductivity is determined by the supply amount of the gas of the impurity element. The state of these gas flows has a great influence on the uniformity of the grown layer, and the relative relationship between the state of the gas flow in the reaction tower and the substrate crystal is extremely important. The gas flow during epitaxial growth in the reaction tower is steady due to the high temperature of the pedestal, where the temperature of the gas around the pedestal rises and creates an upward air current, resulting in a slight convection. A typical gas flow path is formed.
該定常的なガス流路は近似的に軸対称の形状をしておシ
、従ってその中心軸を軸としてペデスタルを回転しても
、ペデスタル上の基板結晶は、常に定常的な軸対称のガ
ス流路の環境下にあることにナシ、エピタキシャル成長
の基板面内の均一性の具体的な改善には限界があるのが
現状である。The steady gas flow path has an approximately axially symmetrical shape. Therefore, even if the pedestal is rotated about its central axis, the substrate crystal on the pedestal will always maintain a steady, axially symmetrical gas flow path. At present, there is a limit to the specific improvement of the uniformity of epitaxial growth within the substrate surface, regardless of the presence of a flow channel environment.
（問題点を解決するだめの手段）
上記問題点を解決するだめに本発明は、エピタキシャル
成長時における軸対称なガス流路の定常的な生成を阻止
するだめに、エピタキシャル成長に関与するガスを供給
するガス噴出板に軸非対称なガス噴出口あるいはガス噴
出口と翼板とを設け、該ガス噴出板を回転させる機構を
設けて、エピタキシャル成長時における反応塔内に軸非
対称でかつ非定常的な分散ガス流路を形成するように構
成した。(Means for Solving the Problems) In order to solve the above problems, the present invention supplies a gas involved in epitaxial growth in order to prevent steady generation of an axially symmetrical gas flow path during epitaxial growth. A gas ejection plate is provided with an axially asymmetrical gas ejection port or a gas ejection port and a vane plate, and a mechanism for rotating the gas ejection plate is provided to prevent an axially asymmetric and unsteady dispersed gas in the reaction tower during epitaxial growth. It was configured to form a flow path.
（作用）
上記のように、ガス流路の分散化と非定常化を行い、エ
ピタキシャル成長時における基板結晶表面内でのガス流
との接触条件の均一化を達成し、広い基板結晶に対して
も成長層品質の面内均一性の優れたエピタキシャル成長
を実現する製造装置を提供する。(Function) As described above, the gas flow path is dispersed and unsteady, and the contact conditions with the gas flow within the substrate crystal surface during epitaxial growth are made uniform, and even for a wide substrate crystal. Provided is a manufacturing apparatus that realizes epitaxial growth with excellent in-plane uniformity of growth layer quality.
（実施例） 以下、本発明の実施例を図面に基づいて説明する。(Example) Embodiments of the present invention will be described below based on the drawings.
第１図は、本発明に係る化合物半導体膜の製造装置の一
実施例図である。同図において、１は石英ガラス製の反
応塔であり、管壁を水冷できるように二重構造になって
おり、２および３はその流水口および排水口である。石
英ガラス裂の支柱４で支持されたカーがン製の被デスタ
ル５は高周波線輪６によシ例えば６００−８００℃程度
の結晶成長温度に高周波誘導加熱できるように表ってお
シ、該にデスタル上には化合物半導体基板結晶７が装着
される。ＭＯ−ＣＶＤ法による化合物半導体のエピタキ
シャル成長に関与する各種の原料ガス、すなわちＧａ（
ＣＨ３）３．Ｉｎ（Ｃ２Ｈ５）６等の有機金属化合物ガ
ス、Ａ８Ｈ３、ＰＨ５等の水素化合物ガス、ｚｎ（ＣＨ
３）２ 等の不純物添加用の有機金属化合物ガスは、
Ｈ２ｒ Ａｒ等のキャリヤガスと共にガス供給口８より
反応塔内に供給される。９は排ガス口であって、常圧状
態でのＭＯ−Ｃ■法の場合にはそのまま外部の排ガス処
理装置へ接続し、減圧状態でのＭＯ−ＣＶＤ法の場合に
は、排気速度を調整可能な排気系をへて外部排ガス処理
装置に接続し、て所定の反応塔内圧力（例えば数１０Ｔ
ｏｒｒ）になるように調整される。FIG. 1 is a diagram showing an embodiment of a compound semiconductor film manufacturing apparatus according to the present invention. In the figure, 1 is a reaction tower made of quartz glass, which has a double structure so that the tube wall can be cooled with water, and 2 and 3 are its water inlets and drain ports. The carton destal 5 supported by the quartz glass crack pillar 4 is exposed to a high frequency coil 6 so that it can be heated by high frequency induction to a crystal growth temperature of, for example, about 600-800°C. A compound semiconductor substrate crystal 7 is mounted on the destal. Various raw material gases involved in epitaxial growth of compound semiconductors by MO-CVD method, namely Ga(
CH3)3. Organometallic compound gas such as In(C2H5)6, hydrogen compound gas such as A8H3, PH5, zn(CH
3) Organometallic compound gas for adding impurities such as 2.
It is supplied into the reaction tower from the gas supply port 8 together with a carrier gas such as H2r Ar. 9 is an exhaust gas port, which can be directly connected to an external exhaust gas treatment device in the case of the MO-C method under normal pressure conditions, and the exhaust speed can be adjusted in the case of the MO-CVD method under reduced pressure conditions. It is connected to an external exhaust gas treatment device through a suitable exhaust system, and is controlled at a predetermined internal pressure (for example, several tens of tons).
orr).
本発明に係る製造装置の特徴的は、ガス噴出部の構造に
ある。すなわち、１０は石英ガラス製の漏斗状のガス誘
導管、１１はガス噴出板であシ、該ガス噴出板にはその
中心軸に非対称なガス噴出口１２が設けられている。ガ
ス誘導板１０には永久磁石１４を装着するための駆動ア
ーム１３が設けられ、該永久磁石と反応塔の外部の回、
転永久磁石１５との間の引力によりガス誘導管を回転で
きるように構成されている。ガス供給口８から供給され
た各種のガスは、ガス誘導管１０とガス噴出板１１とで
形成される混合空間１６で拡散混合して、軸非対称なガ
ス噴出口１２から噴出される。The manufacturing apparatus according to the present invention is characterized by the structure of the gas ejection part. That is, 10 is a funnel-shaped gas guide tube made of quartz glass, 11 is a gas ejection plate, and the gas ejection plate is provided with an asymmetric gas ejection port 12 around its central axis. The gas guide plate 10 is provided with a drive arm 13 for mounting a permanent magnet 14, and the permanent magnet and the external rotation of the reaction tower are connected to each other.
The gas guide tube is configured to be able to rotate due to the attractive force between it and the rotating permanent magnet 15. Various gases supplied from the gas supply port 8 are diffused and mixed in a mixing space 16 formed by a gas guide pipe 10 and a gas ejection plate 11, and are ejected from an axially asymmetric gas ejection port 12.
第２図は本発明の製造装置におけるガス噴出板に係る種
々の実施例図である。同図のガス噴出板２１はすべて中
心軸非対称の位置に１個又は複数個のガス噴出口が設け
られている点で共通しておシ、同図（、）では１個の円
形のガス噴出口２２を、（ｂ）では１個のスリット状の
ガス噴出口２３を、（Ｃ）では蜂の巣状に配列された７
個の微少なガス噴出口２４を、（ｄ）では直線状に配列
された４個の微小なガス噴出口２５を、それぞれ設けた
場合の実施例図である。また、第２図（、）および（ｆ
）は、第２図（、）のガス噴出板に平面状およびくの字
形の翼板２６および２７をそれぞれ設けた実施例図であ
る。FIG. 2 is a diagram showing various embodiments of the gas ejection plate in the manufacturing apparatus of the present invention. The gas ejection plates 21 shown in the same figure all have one or more gas ejection ports located asymmetrically on the central axis. In (b) there is one slit-shaped gas outlet 23, and in (C) there are 7
FIG. 12(d) is a diagram showing an example in which four minute gas outlets 25 arranged in a straight line are provided, respectively. Also, Figure 2 (,) and (f
) is an embodiment view in which the gas ejection plate of FIG. 2(,) is provided with planar and dogleg-shaped vanes 26 and 27, respectively.
以上の本発明に係る製造装置の特徴的な構造は、第３図
での従来の説明で詳述したような高温度のペデスタルに
起因して発生する軸対称な対流を、定常的な状態にしな
いようにするようにされたものである。すなわち、まづ
、ガス噴出板のガス噴出口を軸非対称な位置にすること
によシ軸対称性を減少させ、つぎに該軸非対称のガス噴
出口を回転させることによシ、ガス流路が定常的な状態
になる以前に分散させる機能を果すことができる。The characteristic structure of the manufacturing apparatus according to the present invention described above is such that the axially symmetrical convection generated due to the high temperature pedestal, as detailed in the conventional explanation in FIG. 3, is brought into a steady state. It was designed to prevent this from happening. That is, first, the axial symmetry is reduced by locating the gas outlet of the gas outlet plate in an axially asymmetrical position, and then, by rotating the axially asymmetrical gas outlet, the gas flow path is It can perform the function of dispersing before it reaches a steady state.
さらに、ガス噴出板に軸非対称な翼板を設けることによ
シ、ガス噴出板とペデスタルとの間のガスを回転させて
一層のガス流路の分散非定常化を行なうことができる。Further, by providing the gas ejection plate with an axially asymmetrical vane plate, the gas between the gas ejection plate and the pedestal can be rotated to further disperse and unsteady the gas flow path.
上述のように本発明は、ガスの供給側を全く新しい構造
とすることによシエビタキシャル成長の基板面内での均
一化を達成するものであシ、従来のペデスタル側の回転
による改善策とは性質を異にするものである。しかし、
本発明の装置構造は、ペデスタル側の構造に何等の制約
なしに実施できることから、本発明に加えての補助的な
手段として、従来のペデスタル側の回転を容易に重畳さ
せることが可能であシ、ガス噴出板側とペデスタル側と
のそれぞれの回転方向あるいは回転数を選定することに
より非常に広いガス流量範囲および成長温度範囲にわた
ってのエピタキシャル成長条件を最適化できる利点もあ
る。As mentioned above, the present invention achieves uniformity of the vitaxial growth within the substrate surface by creating a completely new structure on the gas supply side, and is an improvement over the conventional method of rotating the pedestal side. They have different characteristics. but,
Since the device structure of the present invention can be implemented without any restrictions on the structure of the pedestal side, it is possible to easily superimpose the rotation of the conventional pedestal side as an auxiliary means in addition to the present invention. Another advantage is that epitaxial growth conditions can be optimized over a very wide gas flow rate range and growth temperature range by selecting the respective rotation directions or rotation speeds of the gas ejection plate side and the pedestal side.
（発明の効果）
以上説明したように本発明によれば、軸非対称のガス噴
出口とその回転および軸非対称な回転翼板によシ、ＭＯ
−ＣＶＤ法における軸対称なガス流路の定常化を阻止し
てガス流路の分散化、非定常化を行い、エピタキシャル
成長時における広い基板結晶表面内でのガス流との接触
条件の均一化を計シ、成長層の品質の面内均一性を飛躍
的に改善することができる。(Effects of the Invention) As explained above, according to the present invention, the axially asymmetrical gas jet port and its rotation, and the axially asymmetrical rotary blade plate allow the MO
- Preventing the stabilization of the axially symmetrical gas flow path in the CVD method, making the gas flow path dispersed and unsteady, and making the contact conditions with the gas flow uniform within the wide substrate crystal surface during epitaxial growth. The in-plane uniformity of the quality of the growth layer can be dramatically improved.
化合物半導体デパイヌの進展にともなって、近年、化合
物半導体の基板の直径は急速に増大し、かかる大型の基
板結晶に対して良好な面内均一性を実現するＭＯ−ＣＶ
Ｄエピタキシャル成長の製造装置が要請されており、本
発明は、化合物半導体による超高周波集積回路および光
集積回路の高性能化、高密度化、高歩留り化、低コスト
化等に大いに貢献し、極めて優れた工業的な効果がある
。With the development of compound semiconductor technology, the diameter of compound semiconductor substrates has increased rapidly in recent years, and MO-CV technology has developed to achieve good in-plane uniformity for such large substrate crystals.
There is a demand for manufacturing equipment for D-epitaxial growth, and the present invention greatly contributes to higher performance, higher density, higher yield, lower cost, etc. of ultra-high frequency integrated circuits and optical integrated circuits using compound semiconductors, and is extremely excellent. It has industrial effects.
第１図は本発明の化合物半導体薄膜の製造装置の一例を
具体的に示す断面構造図、第２図は、本発明のガス噴出
板に係る他の実施例図、第３図は従来の化合物半導体薄
膜の製造装置の一例を示す断面構造図である。
１．３１・・・反応塔、２，３２・・・流水口、３゜３
３・・・排水口、４，３４・・・支柱、５，３５・・・
ペデスタル、６，３６・・・高周波線輪、７，３７・・
・化合物半導体基板結晶、８，３８・・・ガス供給口、
９゜３９・・・排ガス口、１０・・・ガス誘導管、１１
・・・ガス噴出板、１２，２２，２３，２４，２５・・
・ガス噴出口、１３・・・駆動アーム、１４・・・永久
磁石、１５・・・回転永久磁石、１６．４１−・・混合
空間、２６゜２７・・・Ｒ板、４０・・・メツシュ板、
４２・・・メツジュロ。
特許出願人 沖電気工業株式会社
第１図
（ａ） （ｂ）
（ｃ） （ｄ）
（ｅ） （ｆ）
〃゛ス１１１反都、構入
第２図
先行状イ・訂。表！
第３図
１、事件の表示
昭和６０年 特 許 項第 ９５５８７ 号２、発明
の名称
化合物半導体薄膜の製造装置
３、補正をする者
事件との関係 特 許 出 願 人住 所（
〒１０５） 東京都港区虎ノ門１丁目７番１２号４、
代理人
６、補正の内容 明細書第７項第１３行目に口特徴的ゆ
、」とあるのを「特徴は、」と補正する。FIG. 1 is a cross-sectional structural diagram specifically showing an example of the compound semiconductor thin film manufacturing apparatus of the present invention, FIG. 2 is a diagram of another embodiment of the gas ejection plate of the present invention, and FIG. 3 is a diagram of a conventional compound semiconductor thin film manufacturing apparatus. FIG. 1 is a cross-sectional structural diagram showing an example of a semiconductor thin film manufacturing apparatus. 1.31... Reaction tower, 2,32... Water outlet, 3゜3
3... Drain port, 4, 34... Support, 5, 35...
Pedestal, 6, 36... High frequency wire ring, 7, 37...
・Compound semiconductor substrate crystal, 8, 38... gas supply port,
9゜39...Exhaust gas port, 10...Gas guide pipe, 11
...Gas ejection plate, 12, 22, 23, 24, 25...
・Gas outlet, 13... Drive arm, 14... Permanent magnet, 15... Rotating permanent magnet, 16.41-... Mixing space, 26° 27... R plate, 40... Mesh board,
42...Metsujuro. Patent applicant: Oki Electric Industry Co., Ltd. Figure 1 (a) (b) (c) (d) (e) (f) table! Figure 3 1, Indication of the case 1985 Patent No. 95587 2, Name of the invention Apparatus for manufacturing compound semiconductor thin film 3, Person making the amendment Relationship with the case Patent application Person's address (
105) 1-7-12-4 Toranomon, Minato-ku, Tokyo.
Agent 6, content of amendment: In paragraph 7, line 13 of the specification, the phrase ``characteristic of the mouth'' is amended to read ``characteristics are''.
Claims (2)
長層の製造装置において、軸非対称な位置に１個あるい
は複数個のガス噴出口を有するガス噴出板を設け、該ガ
ス噴出板を支持するガス誘導管とガス噴出板とで形成さ
れる空間内で、反応に関与する原料ガスおよびキャリヤ
ガスを拡散混合しガス噴出口からの噴出せしめるように
なし、該ガス噴出板とガス誘導管とを回転させて、中心
軸上で静止あるいは回転しているペデスタル上の化合物
半導体基板結晶に対して、回転しながら軸非対称なガス
流を照射するように構成したことを特徴とする化合物半
導体薄膜の製造装置。(1) In an apparatus for producing an epitaxially grown layer using an organometallic compound pyrolysis method, a gas ejection plate having one or more gas ejection ports is provided at an axially asymmetrical position, and a gas guide tube supporting the gas ejection plate is provided. In a space formed by the gas ejection plate, the raw material gas and carrier gas involved in the reaction are diffused and mixed and ejected from the gas ejection port, and the gas ejection plate and the gas guide pipe are rotated, 1. An apparatus for manufacturing a compound semiconductor thin film, characterized in that the compound semiconductor substrate crystal on a pedestal, which is stationary or rotating on a central axis, is irradiated with an axially asymmetrical gas flow while rotating.
長層の製造装置において、軸非対称な位置に１個あるい
は複数個のガス噴出口と軸非対称な翼板とを有するガス
噴出板を設け、該ガス噴出板を支持するガス誘導管とガ
ス噴出板とで形成される空間内で、反応に関与する原料
ガスおよびキャリヤガスを拡散混合しガス噴出口からの
噴出せしめるようになし、該ガス噴出板とガス誘導管と
を回転させて、中心軸上で静止あるいは回転しているペ
デスタル上の化合物半導体基板結晶に対して、ガス噴出
板とペデスタルとの間のガスを回転させながら軸非対称
なガス流を照射するように構成したことを特徴とする化
合物半導体薄膜の製造装置。(2) In an apparatus for producing an epitaxially grown layer using an organometallic compound pyrolysis method, a gas ejection plate having one or more gas ejection ports and an axially asymmetrical blade plate is provided at an axially asymmetrical position, and the gas ejection plate The raw material gas and carrier gas involved in the reaction are diffused and mixed in the space formed by the gas guide tube and the gas ejection plate supporting the gas ejection port, and are ejected from the gas ejection port. The compound semiconductor substrate crystal on the pedestal, which is stationary or rotating on the central axis, is irradiated with an axially asymmetrical gas flow while rotating the gas between the gas ejection plate and the pedestal. An apparatus for manufacturing a compound semiconductor thin film, characterized in that it is configured as follows.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9558785A JPS61253822A (en) | 1985-05-07 | 1985-05-07 | Manufacturing device for compound semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9558785A JPS61253822A (en) | 1985-05-07 | 1985-05-07 | Manufacturing device for compound semiconductor thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61253822A true JPS61253822A (en) | 1986-11-11 |
| JPH039609B2 JPH039609B2 (en) | 1991-02-08 |
Family
ID=14141712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9558785A Granted JPS61253822A (en) | 1985-05-07 | 1985-05-07 | Manufacturing device for compound semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61253822A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5275686A (en) * | 1991-09-25 | 1994-01-04 | University Of New Mexico | Radial epitaxial reactor for multiple wafer growth |
| JP2022547508A (en) * | 2019-09-09 | 2022-11-14 | アプライド マテリアルズ インコーポレイテッド | Process system and method of supplying reactant gases |
| US11959169B2 (en) | 2019-01-30 | 2024-04-16 | Applied Materials, Inc. | Asymmetric injection for better wafer uniformity |
-
1985
- 1985-05-07 JP JP9558785A patent/JPS61253822A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5275686A (en) * | 1991-09-25 | 1994-01-04 | University Of New Mexico | Radial epitaxial reactor for multiple wafer growth |
| US11959169B2 (en) | 2019-01-30 | 2024-04-16 | Applied Materials, Inc. | Asymmetric injection for better wafer uniformity |
| JP2022547508A (en) * | 2019-09-09 | 2022-11-14 | アプライド マテリアルズ インコーポレイテッド | Process system and method of supplying reactant gases |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH039609B2 (en) | 1991-02-08 |
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