CN104465451B - A kind of electrostatic chuck and its air supply method - Google Patents
A kind of electrostatic chuck and its air supply method Download PDFInfo
- Publication number
- CN104465451B CN104465451B CN201310431436.1A CN201310431436A CN104465451B CN 104465451 B CN104465451 B CN 104465451B CN 201310431436 A CN201310431436 A CN 201310431436A CN 104465451 B CN104465451 B CN 104465451B
- Authority
- CN
- China
- Prior art keywords
- electrostatic chuck
- gas
- substrate
- process gas
- passage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Abstract
The present invention relates to a kind of electrostatic chuck and its air supply method, positioned at the electrostatic chuck of vacuum processing chamber inner bottom part, its diameter is equal to or more than the electrostatic chuck and fixes the substrate diameter supported；Second process gas is transported to the marginal position of substrate back using the gas passage positioned at edges of electrostatic chuck, and the center that helium or the second process gas are transported to substrate surface is subjected to heat transfer cooling using the gas passage positioned at electrostatic chuck center, because the second process gas composition is identical or closely with the composition for being transported to the first process gas that substrate surface carries out reaction treatment, the gas after the second process gas and the first process gas mix is able to ensure that, reaction condition during processing substrate edge will not be changed.Thus the present invention can be applied on larger-sized electrostatic chuck, to obtain more preferable Temperature Distribution effect on substrate.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of electrostatic chuck and its air supply method.
Background technology
It is a kind of structural representation of existing vacuum processing chamber 10 as shown in Figure 1.Process gas 40 enters vacuum from top
In process chamber 10, the surface of substrate 30 is performed etching, thin film deposition or some other processing.In the vacuum processing chamber 10
Bottom is provided with electrostatic chuck 20, is used for that branch is fixed to the substrate 30 being positioned on the electrostatic chuck 20 in processing procedure
Hold.Helium 60, first via some gas passages 50 opened up in electrostatic chuck 20, passes from below through the electrostatic as cooling gas
Sucker 20 reaches its top surface, then the back of the body of whole substrate 30 is flowed through in gap between the back side of substrate 30 and the top surface of electrostatic chuck 20
Face is conducted heat, to realize the cooling to substrate 30.However, helium 60 can be leaked at the edge of substrate 30, and and technique
Gas 40 is mixed（Label 70 show the Mixed Zone of gas）, so that the reaction condition at the edge of substrate 30 is changed
Become, cause the center of substrate 30 be made with fringe region after effect it is inconsistent.
Current solution is the diameter for making the smaller face thereon of diameter of electrostatic chuck 20 put substrate 30, allows substrate
30 can cover all electrostatic chuck 20, so that the Mixed Zone of helium 60 and process gas 40 is limited under substrate 30
Side.But, in order to obtain more preferable Temperature Distribution on the substrate 30, the size of increase electrostatic chuck is inexorable trend, above-mentioned
Solution but runs in the opposite direction therewith.Therefore, in this case, a kind of new electrostatic chuck and supply scheme are needed badly.
The content of the invention
It is an object of the invention to provide a kind of new electrostatic chuck, and change the air supply method of wherein cooling gas,
The edge of substrate is used as cooling gas with technique gas instead helium, it is ensured that while to substrate heat transfer cooling effect, in electrostatic
Sucker size can be prevented effectively from substrate edge cooling gas leakage mixing and cause the problem of process conditions change to send out when increasing
It is raw.
In order to achieve the above object, the first string of the invention is to provide a kind of electrostatic chuck, positioned at vacuum processing chamber
Interior bottom, the substrate being placed on the electrostatic chuck is fixed support, and the first process gas imported into vacuum processing chamber
It is interior that reaction treatment is carried out to substrate surface；The diameter of the electrostatic chuck is equal to or more than the diameter of the substrate；The electrostatic
Some gas passages are offered in sucker, wherein the gas passage positioned at edges of electrostatic chuck can be at least to the electrostatic chuck
Edge, bull ladle contains the second process gas of first process gas composition, so that it is guaranteed that second process gas and the
Gas after one process gas mix, will not change reaction condition during processing substrate edge.
In one embodiment, all gas passages of the electrostatic chuck, can using second process gas as
Cooling gas, is delivered to the space between substrate back and electrostatic chuck top surface, in order to which second process gas can connect
Touch and heat transfer cooling is carried out to it in the whole back side of substrate.
Preferably, the gas passage that second process gas is conveyed in the electrostatic chuck is divided into some groups, each group
Gas passage is arranged separately on using electrostatic chuck center as the annulus in the center of circle, the annulus concentric cloth where each group gas passage
Put.
Preferably, when being transported to the top surface of electrostatic chuck, second process gas is at the opening of each gas passage
Divergently blowed to surrounding.
In another embodiment, the electrostatic chuck is provided with central area, and the side around the central area
Edge region；In the gas passage of the electrostatic chuck, comprising some groups of first passages positioned at central area, and positioned at marginal zone
Some groups of second channels in domain；
Preferably, helium is delivered to the center of substrate back to carry out heat transfer cooling by the first passage；It is described
Second process gas is delivered to the marginal position of substrate back by second channel, by second process gas by helium
Separated with first process gas.
The each group first passage of central area is preferably located at, one using electrostatic chuck center as the center of circle is arranged separately on
On a little annulus；Positioned at each group second channel of fringe region, other one using the electrostatic chuck center as the center of circle is arranged separately on
On a little annulus；Annulus where each group second channel is arranged with the annulus concentric where each group first passage.
Preferably, when being transported to the top surface of electrostatic chuck, the helium is sent out at the opening of each first passage to surrounding
Blow scatteredly, second process gas exported from each second channel opening is most of to be blowed to the edge of substrate.
Preferably, gas pressure during second process gas is conveyed by second channel, more than passing through first passage
Convey gas pressure during helium.
In a preferred embodiment, second process gas is and first process gas composition and proportioning complete one
The gas of cause；Or, second process gas is a kind of the mixed of a small amount of diluent gas to be mixed into a large amount of first process gas
Close gas.
Preferably, the diluent gas is inert gas or active gases；The inert gas be helium, neon, argon gas,
Any one in Krypton, xenon or nitrogen or its any combination；The active gases is oxygen-containing gas.
Second scheme of the present invention is to provide a kind of vacuum processing chamber, the bottom in the application of vacuum room, sets
There is the electrostatic chuck as described above described in any one embodiment.
The 3rd scheme of the present invention is to provide a kind of air supply method, can be positioned over electrostatic chuck into application of vacuum room
On substrate surface convey the first process gas, to substrate carry out reaction treatment；By being located at marginal zone in the electrostatic chuck
The gas passage in domain, contains the second process gas of the first process gas composition, with true to the marginal position bull ladle of substrate back
The gas protected after second process gas and the first process gas mix, will not change reaction bar during processing substrate edge
Part；Also by being located at the gas passage of central area in the electrostatic chuck, helium or defeated is conveyed to the center of substrate back
Second process gas is sent, heat transfer cooling is carried out to substrate.
Preferably, gas pressure when second process gas carries out heat transfer cooling is conveyed, more than by conveying helium
Carry out gas pressure during heat transfer cooling.
Compared to described in background technology in electrostatic chuck be used alone helium as cooling gas scheme, the present invention in will
Second process gas of the first process gas composition identical used, substrate back is delivered to instead of helium during with substrate surface treatment
Marginal position or whole positions of substrate back heat transfer cooling is carried out to substrate, can be prevented effectively from substrate edge because not
Cause the problem of processing reaction condition changes with gas mixing, therefore can apply to larger-sized electrostatic chuck, from
And more preferable Temperature Distribution effect is obtained on substrate., can by improving pressure during the second process gas of conveying in the present invention
To make up the deficiency that its heat transfer efficiency is less than helium, to ensure the cooling effect to substrate.Can also be by using in the present invention
First process gas and the gas of diluent gas mixing as the second process gas, come adjust speed during Substrate treatment reaction or
Compensate due to the substrate heterogeneity difference that other reasons are caused.
Brief description of the drawings
Fig. 1 is existing vacuum processing chamber and its schematic diagram for supplying situation；
Fig. 2 is the schematic diagram using the vacuum processing chamber of electrostatic chuck described in the embodiment of the present invention 1 and its supply situation；
Fig. 3 is the top view of gas passage in electrostatic chuck described in the embodiment of the present invention 1；
Fig. 4 is the schematic diagram using the vacuum processing chamber of electrostatic chuck described in the embodiment of the present invention 2 and its supply situation；
Fig. 5 is the top view of gas passage in electrostatic chuck described in the embodiment of the present invention 2.
Embodiment
Below in conjunction with accompanying drawing, illustrate multiple preferred embodiments of the present invention.
Embodiment 1
As shown in Fig. 2 in one embodiment of the present invention, the first process gas 40 is passed through into vacuum processing chamber 1
The surface of substrate 3 is performed etching or other processing, the bottom in vacuum processing chamber 1 is provided with electrostatic chuck 2, to being placed on this
Support is fixed in substrate 3 on electrostatic chuck 2.Some gas passages 50 are offered in electrostatic chuck 2, will can be cooled down
The bottom of gas from electrostatic chuck 2 imported into its top surface.Afterwards, cooling gas by the back side of substrate 3 and the top surface of electrostatic chuck 2 it
Between space blow so that the back side for flowing through whole substrate 3 is conducted heat, realize the cooling to substrate 3.
Wherein, the diameter of electrostatic chuck 2 described in the present embodiment is equal to or more than the diameter of substrate 3.Meanwhile, as above-mentioned cold
But the gas componant that gas is used, with above-mentioned the first process gas 40 for being used for carrying out the surface reaction treatment of substrate 3 into split-phase
Together or closely, described cooling gas is called the second process gas 80 or 80 '.Therefore, though the second process gas 80 or
80 ' leak at the edge of substrate 3, and when being mixed with the first process gas 40 from the top of substrate 3, will not also change substrate
The reaction condition at 3 edges.
Specifically, it can use with all completely the same gas such as the composition of the first process gas 40 and proportioning as second
Process gas 80；Or, the mixed gas of a kind of diluent gas and the first process gas 40 can also be used as the second technique
Content shared by gas 80 ', wherein diluent gas is minimum, and the overwhelming majority of the second process gas 80 ' is still the first process gas
40.Therefore, by the species and the difference of ratio of the diluent gas being mixed into, speed that can be to be etched on flexible modulation substrate 3
Rate, and the heterogeneity difference of the substrate 3 caused by other reasons can also be compensated.
Described diluent gas can be inert gas, for example：Helium, neon, argon gas, Krypton, xenon, nitrogen or its
Its suitable inert gas, can be by the concentration of the first process gas 40 for suitably changing the edge of substrate 3, so that flexible modulation
（Accelerate or slow down）The speed etched on substrate 3.Or, described diluent gas can also be active gases, e.g. oxygen
Or other suitable active gases, the non-equal of the substrate 3 caused by other reasons is compensated so as to erode
Even sex differernce.And the composition and proportioning of first process gas 40 are determined according to the target substance of etching, it is, for example,
SF6, CHF3Etc., do not enumerate herein.
Second process gas 80 or 80 ' the parameter such as pressure, flow velocity, can adjust according to specific circumstances.It is right
It is caused to conduct heat cooling effect not as the problem of originally using helium in the low thermal conductivity of the first process gas 40, the present invention's
It is preferred that can suitably be improved by increasing pressure during the second process gas 80 of importing in application example.Central area is corresponding
Helium can also be spread out to the corresponding outer peripheral areas of the second process gas 80, now the cooling gas of electrostatic chuck outer peripheral areas
Body is really the mixed gas of helium and the second process gas 80, can not only cool down substrate outer peripheral areas and prevent because of leakage
Cooling gas dilution and the relatively low problem of substrate edge region reaction speed that causes.
Be provided with electrostatic chuck 2 for importing the second process gas 80 or 80 ' multigroup gas passage 50, each group of gas
Body passage 50 is arranged on an annulus using the center of electrostatic chuck 2 as the center of circle（One of which gas is only demonstrated by Fig. 2 to lead to
The schematic construction of the longitudinal profile of road 50）.As shown in figure 3, the opening of these gas passages 50, is arranged in the top surface of electrostatic chuck 2
Some circle annulus arranged into concentric.Second process gas 80 or 80 ' electrostatic chuck 2 is reached by the opening of gas passage 50
Top surface after, i.e., divergently blowed to each surrounding being open, in order to which each position at rapid contact substrate 3 back side is realized
Heat transfer cooling.Structure shown in Fig. 2, Fig. 3 is only as an example, be not the shape bore to each gas passage 50, or phase
The limitation of the parameter such as spacing distance and distributing position between adjacent gas passage 50.
Embodiment 2
As shown in figure 4, in second embodiment of the present invention, electrostatic chuck 2 is located at the bottom in vacuum processing chamber 1, use
Support is fixed to placing superincumbent substrate 3, the first process gas 40 imports from top and the surface of substrate 3 is performed etching
Or other processing.The diameter of electrostatic chuck 2 is equal to or more than the diameter of substrate 3.Also, first is provided with electrostatic chuck 2
Passage 51 and second channel 52 this two groups of gas passages, are respectively intended to the space between the back side of substrate 3 and the top surface of electrostatic chuck 2
Convey gas.
Wherein, first passage 51 is located at the central area 91 of electrostatic chuck 2, for conveying cooling gas, preferably helium
60；Second channel 52 is located at the fringe region 92 of electrostatic chuck 2, complete with the composition proportion of the first process gas 40 for conveying
Identical or the second process gas 80 or 80 closely ', second process gas 80 or 80 ' is by the cooling of central area 91
Gas is separated with the first process gas 40 from the top of substrate 3, to ensure that the reaction condition at the edge of substrate 3 is unaffected.
, can be by by pole if the second process gas 80 ' is with the composition of the first process gas 40 gas closely
A small amount of diluent gas is mixed into the first process gas 40 to obtain；Being mixed into for the diluent gas can be for regulation substrate 3
Processing speed or the heterogeneity difference of substrate 3 that is caused by other factors of compensation, its example may refer in above-described embodiment
Similar description.
In the electrostatic chuck 2, belong to some groups of gas passages of first passage 51, and belong to some of second channel 52
Group gas passage, is each arranged on using the center of electrostatic chuck 2 as the annulus in the center of circle（Only it is demonstrated by Fig. 4 wherein each one group
The schematic construction of gas passage longitudinal profile）.As shown in figure 5, on the top surface of electrostatic chuck 2, each first passage 51 is opened
Mouth is arranged in central area 91 on some circle annulus of concentric arrangement；The opening of each second channel 52 is then in
On some circle annulus that concentric arrangement is arranged in the fringe region 92 that heart district domain 91 is set.That is, second channel 52
Opening be distributed in first passage 51 opening periphery, closer to the position on the periphery of electrostatic chuck 2.Shown in Fig. 4, Fig. 5
Structure only as an example, be not the division to central area 91 and fringe region 92, or in each region gas passage shape
Shape bore, or in regional or in adjacent area the parameter such as gas passage spacing distance and distributing position limitation.
Mainly cooled down because the thermal conductivity of helium is higher than in process gas, the present embodiment by helium heat transfer
, therefore helium 60 can be made to send out backward surrounding diverging from the opening of first passage 51 in order to rapid contact substrate 3 back side
Most of position.Meanwhile, second channel 52 can be designed to make the second process gas 80 or 80 ' largely flow to base
The structure of the marginal position of piece 3（For example slightly change opening direction of second channel 52 etc.）.Furthermore it is also possible to make by second
Passage 52 convey the second process gas 80 or 80 ' when pressure be more than by first passage 51 convey helium when pressure, to fit
The second process gas 80 or 80 should be improved ' effect cooled down of being conducted heat to the edge of substrate 3.
In summary, the structure and air supply method shown in each embodiment of the invention, is ensureing the same of heat transfer cooling effect
When, helium at least is replaced using process gas at the edge of electrostatic chuck 2, even if the process gas after leakage with the top of substrate 3
Occur mixing and also do not interfere with the reaction condition at the edge of substrate 3, it is thus possible to use larger sized electrostatic chuck 2, so as to
More preferable Temperature Distribution is obtained on substrate 3.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (13)
1. a kind of electrostatic chuck, positioned at vacuum processing chamber（1）Interior bottom, to being placed on the electrostatic chuck（2）On substrate（3）
Support, the first process gas is fixed（40）It imported into vacuum processing chamber（1）It is interior to substrate（3）Surface carries out reaction treatment；
Characterized in that, the electrostatic chuck（2）Top surface diameter be equal to or more than the substrate（3）Diameter；The electrostatic chuck
（2）In offer some gas passages, by cooling gas from electrostatic chuck（2）Bottom imported into its top surface, substrate（3）The back side
With electrostatic chuck（2）There is space between top surface so that cooling gas flows through whole substrate（3）The back side conducted heat, wherein
Positioned at electrostatic chuck（2）The gas passage at edge can be at least to the electrostatic chuck（2）Edge, conveying include first work
Skill gas（40）Second process gas of composition comes to substrate as cooling gas（3）Carry out heat transfer cooling.
2. electrostatic chuck as claimed in claim 1, it is characterised in that
The electrostatic chuck（2）All gas passages, base can be delivered to using second process gas as cooling gas
Piece（3）The back side and electrostatic chuck（2）Space between top surface, in order to which second process gas can be contacted with substrate（3）
The whole back side heat transfer cooling is carried out to it.
3. electrostatic chuck as claimed in claim 1, it is characterised in that
The electrostatic chuck（2）Provided with central area（91）, and around the central area（91）Fringe region（92）；
The electrostatic chuck（2）Gas passage in, comprising positioned at central area（91）Some groups of first passages（51）, and positioned at side
Edge region（92）Some groups of second channels（52）；
The first passage（51）Helium is delivered to substrate（3）The center at the back side carries out heat transfer cooling；Described second
Passage（52）Second process gas is delivered to substrate（3）The marginal position at the back side.
4. electrostatic chuck as claimed in claim 2, it is characterised in that
The electrostatic chuck（2）The gas passage of middle conveying second process gas is divided into some groups, each group of gas passage
It is arranged separately on electrostatic chuck（2）Center is on the annulus in the center of circle, the annulus concentric where each group gas passage is arranged.
5. electrostatic chuck as claimed in claim 2, it is characterised in that
It is transported to electrostatic chuck（2）Top surface when, second process gas is sent out at the opening of each gas passage to surrounding
Blow scatteredly.
6. electrostatic chuck as claimed in claim 3, it is characterised in that
Positioned at central area（91）Each group first passage（51）, it is arranged separately on electrostatic chuck（2）Center is the one of the center of circle
On a little annulus；Positioned at fringe region（92）Each group second channel（52）, it is arranged separately on the electrostatic chuck（2）Center is circle
On the other annulus of the heart；Each group second channel（52）The annulus at place and each group first passage（52）The annulus at place is with circle
The heart is arranged.
7. electrostatic chuck as claimed in claim 3, it is characterised in that
It is transported to electrostatic chuck（2）Top surface when, the helium is in each first passage（51）Opening to surrounding divergently
Blow, from each second channel（52）Be open second process gas exported, most of to substrate（3）Edge blow.
8. electrostatic chuck as claimed in claim 3, it is characterised in that
Pass through second channel（52）Gas pressure during second process gas is conveyed, more than passing through first passage（51）Conveying
Gas pressure during helium.
9. electrostatic chuck as described in claim 1, it is characterised in that
Second process gas is and first process gas（40）Composition and the completely the same gas of proportioning；Or, institute
State the second process gas be one kind in a large amount of first process gas（40）In be mixed into the mixed gas of a small amount of diluent gas.
10. electrostatic chuck as claimed in claim 9, it is characterised in that
The diluent gas is inert gas or active gases.
11. electrostatic chuck as claimed in claim 10, it is characterised in that
The inert gas is any one or its any combination in helium, neon, argon gas, Krypton, xenon or nitrogen.
12. electrostatic chuck as claimed in claim 10, it is characterised in that
The active gases is oxygen-containing gas.
13. a kind of vacuum processing chamber, it is characterised in that in the vacuum processing chamber（1）Interior bottom, is set just like claim
Electrostatic chuck in 1 ~ 10 described in any one（2）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310431436.1A CN104465451B (en) | 2013-09-22 | 2013-09-22 | A kind of electrostatic chuck and its air supply method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310431436.1A CN104465451B (en) | 2013-09-22 | 2013-09-22 | A kind of electrostatic chuck and its air supply method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104465451A CN104465451A (en) | 2015-03-25 |
| CN104465451B true CN104465451B (en) | 2017-09-05 |
Family
ID=52911301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310431436.1A Active CN104465451B (en) | 2013-09-22 | 2013-09-22 | A kind of electrostatic chuck and its air supply method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104465451B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW423064B (en) * | 1996-04-30 | 2001-02-21 | Matsushita Electronics Corp | Substrate cooling apparatus and semiconductor fabrication apparatus |
| US7156951B1 (en) * | 2002-06-21 | 2007-01-02 | Lam Research Corporation | Multiple zone gas distribution apparatus for thermal control of semiconductor wafer |
| CN101477945A (en) * | 2008-12-30 | 2009-07-08 | 中微半导体设备(上海)有限公司 | Method and apparatus for preventing/reducing substrate back polymer deposition |
| CN101552182A (en) * | 2008-03-31 | 2009-10-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Marginal ring mechanism used in semiconductor manufacture technology |
| CN102856243A (en) * | 2011-06-30 | 2013-01-02 | 细美事有限公司 | Electrostatic chucks, substrate treating apparatuses including the same, and substrate treating methods |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM423064U (en) * | 2011-05-27 | 2012-02-21 | Uniopto Electronics Co Ltd | Display device for movable carrier |
-
2013
- 2013-09-22 CN CN201310431436.1A patent/CN104465451B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW423064B (en) * | 1996-04-30 | 2001-02-21 | Matsushita Electronics Corp | Substrate cooling apparatus and semiconductor fabrication apparatus |
| US7156951B1 (en) * | 2002-06-21 | 2007-01-02 | Lam Research Corporation | Multiple zone gas distribution apparatus for thermal control of semiconductor wafer |
| CN101552182A (en) * | 2008-03-31 | 2009-10-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Marginal ring mechanism used in semiconductor manufacture technology |
| CN101477945A (en) * | 2008-12-30 | 2009-07-08 | 中微半导体设备(上海)有限公司 | Method and apparatus for preventing/reducing substrate back polymer deposition |
| CN102856243A (en) * | 2011-06-30 | 2013-01-02 | 细美事有限公司 | Electrostatic chucks, substrate treating apparatuses including the same, and substrate treating methods |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104465451A (en) | 2015-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5544669B2 (en) | Gas injection unit and thin film deposition apparatus and method using the same | |
| CN100468619C (en) | Temperature control device of etching equipment and its method for controlling wafer temperature | |
| CN101504928B (en) | Substrate mounting table, substrate processing apparatus and substrate temperature control method | |
| JP2014146767A5 (en) | ||
| KR950020967A (en) | Plasma treatment apparatus and plasma treatment method | |
| JP6606403B2 (en) | Shower plate, vapor phase growth apparatus, and vapor phase growth method | |
| KR101758433B1 (en) | Film forming apparatus and film forming method | |
| TW200616139A (en) | Method and apparatus for controlling temperature of a substrate | |
| JP2009087989A (en) | Method of forming epitaxial growth film | |
| JP5413305B2 (en) | Epitaxial growth equipment | |
| CN104878370A (en) | Split type temperature-controllable heating disc structure | |
| JP2013145873A (en) | Deposition apparatus and deposition method | |
| US7060944B2 (en) | Heat treatment device and heat treatment method | |
| JP2016036018A (en) | Plasma processing device and gas supply member | |
| CN104465451B (en) | A kind of electrostatic chuck and its air supply method | |
| CN107574424A (en) | Injection plug-in unit for EPI chambers | |
| JP2012049339A (en) | Film deposition apparatus and film deposition method | |
| JP2011134871A (en) | Epitaxial growth device, and method of manufacturing the same | |
| CN105624645B (en) | Reacting gas conveying device and chemical vapor deposition or outer layer growth reactor | |
| JP4677873B2 (en) | Deposition equipment | |
| CN104465450B (en) | Gas supply device and method for cooling static sucker | |
| JP2007224375A (en) | Vapor deposition apparatus | |
| JP5032828B2 (en) | Vapor growth equipment | |
| CN107768300B (en) | Chuck, reaction chamber and semiconductor processing equipment | |
| CN202830169U (en) | Chemical vapor deposition device for metal organic matters |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |