JP2012049339A - Film deposition apparatus and film deposition method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method which can prevent a reaction gas from contacting a member such as a liner and the like around a substrate thereby preventing adhesion of a reaction product.SOLUTION: A film deposition apparatus 100 includes a chamber 1, a reaction gas supply part 14 supplying a reaction gas 26 into the chamber 1, an inert gas supply part 4 supplying an inert gas 25 into the chamber 1, a hollow cylindrical liner 2 disposed in the chamber 1 and a susceptor 7 on which a semiconductor substrate 6 is loaded provided in the liner 2. In the liner 2, a head part 31 serving as a duct of the reaction gas 26 and a trunk part 30 with the susceptor 7 disposed inside are disposed via a slit 38 through which the inert gas 25 flows down.

Description

  The present invention relates to a film forming apparatus and a film forming method.

  Conventionally, an epitaxial growth technique has been used for manufacturing a semiconductor element that requires a relatively thick crystal film, such as a power device such as an IGBT (Insulated Gate Bipolar Transistor).

  In the vapor phase growth method used for the epitaxial growth technique, a wafer is placed inside a film formation chamber maintained at normal pressure or reduced pressure, and a reactive gas is supplied into the film formation chamber while heating the wafer. Then, a thermal decomposition reaction and a hydrogen reduction reaction of the reaction gas occur on the surface of the wafer, and an epitaxial film is formed on the wafer.

  In order to manufacture a thick epitaxial film with a high yield, it is necessary to improve the film formation rate by bringing new reaction gases into contact with the uniformly heated wafer surface one after another. Therefore, in a conventional film forming apparatus, for example, epitaxial growth is performed while rotating a wafer at a high speed (see, for example, Patent Document 1).

JP 2008-108983 A

  In recent years, SiC (silicon carbide (silicon carbide)) epitaxial growth technology has attracted attention. SiC is characterized by an energy gap that is two to three times larger than that of conventional semiconductor materials such as Si (silicon) and GaAs (gallium arsenide), and a dielectric breakdown electric field that is about one digit larger. For this reason, it is a semiconductor material expected to be used for high breakdown voltage power semiconductor devices.

  However, when depositing SiC, in addition to the surface of the wafer, the susceptor that supports the wafer, the inner wall of the deposition chamber, the piping for exhausting the gas in the deposition chamber, etc. The problem that the reaction product which adheres may adhere may arise.

  FIG. 3 is a schematic cross-sectional view for explaining the structure and problems of a conventional film forming apparatus.

As shown in FIG. 3, a conventional film forming apparatus 200 includes a chamber 201 as a film forming chamber, a liner 202, flow paths 203a and 203b of cooling water for cooling the chamber 201, and hydrogen (H _{2 as} a purge gas). ) Hydrogen gas supply unit 204 for introducing gas 225, reaction gas supply unit 214 for introducing reaction gas 226, exhaust unit 205, susceptor 207, heater 208, flanges 209 and 211, And packings 210 and 212 for sealing.

  The hollow cylindrical liner 202 has a body portion 230 in which the susceptor 207 is disposed, and a head portion 231 having an inner diameter smaller than that of the body portion 230, and these are connected by a connecting portion 234. That is, the head portion 231 and the trunk portion 230 have different diameters, but are integrated as the liner 202 and form a continuous space in the chamber 201.

  A shower plate 220 having a plurality of through holes 221 is attached to the opening of the head portion 231 of the liner 202. The susceptor 207 is attached on the rotating cylinder 223, and a semiconductor substrate 206 to be deposited is placed on the susceptor 207.

  The rotating cylinder 223 is connected to a rotating mechanism (not shown) via a rotating shaft 232 extending from the bottom of the chamber 201 to the inside of the chamber 201. During the vapor phase growth reaction, the rotating shaft rotates through the rotating mechanism, and the susceptor 207 rotates through the rotating cylinder 223 rotated thereby. As a result, the semiconductor substrate 206 placed on the susceptor 207 rotates.

  The reactive gas 226 is supplied from a reactive gas supply unit 214 provided in the upper part of the chamber 201. And it passes through the through-hole 221 of the shower plate 220, is supplied to the surface of the semiconductor substrate 206 heated by the heater 208, and is used for film-forming of an epitaxial film. Of the reaction gas 226, the gas that has not been used for the vapor phase growth reaction is exhausted from the exhaust unit 205.

  A hydrogen gas supply unit 204 that supplies a hydrogen gas 225 that is a purge gas is provided in an upper portion of the chamber 201 in a space between the liner 202 and the inner wall of the chamber 201. The hydrogen gas 225 is supplied from the hydrogen gas supply unit 204, purges the space between the side wall of the chamber 201 and the liner 202, and is discharged from the lower end of the trunk portion 230 of the liner 202. Thereafter, the gas is discharged from the exhaust unit 205 to the outside of the chamber 201.

  When the SiC film is formed by the film forming apparatus 200 as described above, the following problem occurs.

  In the epitaxial growth of SiC, the substrate needs to be heated to a high temperature of 1500 ° C. or higher. At this time, the radiant heat from the heater 208 is transmitted not only to the semiconductor substrate 206 but also to other members constituting the film forming apparatus 200 to raise the temperature thereof. In particular, the body 230 of the liner 202 close to the semiconductor substrate 206 and the heater 208 is hot. When the reaction gas 226 comes into contact with such a high temperature portion, the reaction product 237 resulting from the reaction gas 226 adheres.

  As the reaction product 237 is repeatedly heated and lowered along with the operation of the film forming apparatus 200, the fragments are peeled off and stay in the chamber 201 as dust. And it becomes a factor which produces a defect in the epitaxial film formed on a board | substrate and degrades quality. For this reason, conventionally, it was necessary to periodically remove the reaction product 237. However, such maintenance work has a problem that the operation rate cannot be improved beyond a certain level because the operation of the film forming apparatus 200 needs to be stopped.

  The present invention has been made in view of such problems. That is, an object of the present invention is to provide a film forming apparatus and a film forming method capable of preventing a reaction gas from coming into contact with a member around a substrate such as a liner during an epitaxial growth process and preventing a reaction product from adhering. There is to do.

  Other objects and advantages of the present invention will become apparent from the following description.

A first aspect of the present invention includes a film formation chamber,
A reaction gas supply unit for supplying a reaction gas into the film forming chamber;
An inert gas supply unit for supplying an inert gas into the film forming chamber;
A hollow cylindrical liner provided in the deposition chamber;
A susceptor provided in the liner and on which the substrate is placed;
The present invention relates to a film forming apparatus characterized in that an inert gas flows down along an inner wall of a liner.

  In the first aspect of the present invention, the liner has a configuration in which a head portion serving as a reaction gas flow path and a body portion in which the susceptor is disposed are disposed via a slit, and the liner is inactive. It is preferable that the gas flow down.

  In the first aspect of the present invention, the head of the liner preferably has a collar portion having an inner diameter smaller than that of the trunk portion and formed along the periphery of the lower end portion, and the slit is formed between the collar portion and the trunk portion. It is preferable to be provided between the upper end portion.

  In the first aspect of the present invention, the inert gas is preferably argon (Ar) gas.

According to a second aspect of the present invention, a predetermined film is formed on a substrate by supplying a reaction gas to the film formation chamber while heating the substrate in a hollow cylindrical liner disposed in the film formation chamber. A membrane method,
The liner is configured such that a head that serves as a flow path for the reaction gas and a body portion in which the substrate is disposed are disposed via a slit,
An inert gas is supplied to the film forming chamber, and the film is formed while flowing the inert gas from the slit along the inner wall of the liner.

According to the present invention, there is provided a film forming apparatus and a film forming method capable of preventing a reaction gas from contacting a member around a substrate such as a liner during an epitaxial growth process and preventing a reaction product from adhering. .
This film formation apparatus is applied to a so-called vertical epitaxial growth apparatus in which a gas necessary for film formation is supplied from the upper surface of a substrate placed on a susceptor and a heater is provided on the back surface side of the susceptor. It is desirable.

It is typical sectional drawing of the film-forming apparatus of this Embodiment. It is another example of the film-forming apparatus of this Embodiment. It is typical sectional drawing of the conventional film-forming apparatus.

  FIG. 1 is a schematic cross-sectional view of the film forming apparatus of the present embodiment. The film forming apparatus of the present embodiment is particularly suitable for forming a SiC epitaxial film.

When the SiC film is formed using the film forming apparatus 100 of FIG. 1, an SiC wafer can be used as the semiconductor substrate 6. However, the present invention is not limited to this, and a wafer made of another material may be used depending on the case. For example, instead of the SiC wafer, a Si wafer may be used, or another insulating substrate such as SiO ₂ (quartz) or a semi-insulating substrate such as high-resistance GaAs may be used.

  The film forming apparatus 100 includes a chamber 1 as a film forming chamber, a hollow cylindrical liner 2 that covers and protects the inner wall of the chamber 1, cooling water channels 3 a and 3 b that cool the chamber 1, and a chamber 1. A reaction gas supply unit 14 for introducing a reaction gas 26 into the interior, an exhaust unit 5 for exhausting the reaction gas 26 after reaction and the like out of the chamber 1, and a semiconductor substrate 6 such as a wafer as a substrate are placed. A susceptor 7 that supports this, a heater 8 that is supported by a support portion (not shown) and heats the semiconductor substrate 6, a flange portion 9 that connects the upper and lower portions of the chamber 1, and a packing 10 that seals the flange portion 9. And a flange portion 11 that connects the exhaust portion 5 and the pipe, and a packing 12 that seals the flange portion 11. Furthermore, the film forming apparatus 100 of the present embodiment has an inert gas supply unit 4 for introducing the inert gas 25 into the chamber 1.

  The liner 2 is configured using a material having very high heat resistance. For example, it is possible to use a member formed by coating carbon with SiC.

  The reason for providing the liner 2 is that the chamber wall in the film forming apparatus is generally made of stainless steel. That is, in the film forming apparatus 100, in order not to expose the stainless steel wall in the gas phase reaction system, the liner 2 covering the entire surface is used. The liner 2 has an effect of preventing adhesion of particles and metal contamination to the wall of the chamber 1 during formation of the crystal film, and preventing the wall of the chamber 1 from being eroded by the reaction gas 26.

  The liner 2 has a hollow cylindrical shape, and includes a body portion 30 in which the susceptor 7 is disposed, and a head portion 31 having an inner diameter smaller than that of the body portion 30. The head portion 31 and the trunk portion 30 are disposed via the slit 38. That is, the trunk portion 30 and the head portion 31 in the present embodiment are not integrated into the liner 2 but are separate and combined so that a slit 38 is provided therebetween. Liner 2 is configured. The liner 2 protects the space around the susceptor 7 on which the semiconductor substrate 6 is placed so that the inner wall of the chamber 1 is not exposed.

  The head portion 31 has a collar portion 34 formed along the periphery of the lower end portion thereof, and a slit 38 is formed between the collar portion 34 and the upper end portion of the trunk portion 30. The slit 38 becomes a blowout port for the inert gas 25 described later. By providing the flange portion 34, the slit 38 can be formed near the trunk portion 30 so that the inert gas 25 can flow down along the trunk portion 30. In the example of FIG. 1, the collar portion 34 has a cross section formed substantially horizontally with respect to the vertical direction. However, the shape of the collar part 34 is not restricted to this, For example, it can also be set as the shape where the cross section inclined. In this case, it is preferable to have a shape that is inclined downward toward the slit 38 from the point of guiding the gas to the exhaust part 5.

  In the film forming apparatus of the present embodiment, the head and the body of the liner may be provided integrally. That is, it is also possible to connect the collar part and the body part and provide a plurality of through holes in the collar part instead of the slit. In this case, it is preferable to provide the plurality of through holes in the vicinity of the connecting portion between the collar portion and the trunk portion. The body portion protects the wall of the chamber around the semiconductor substrate as in the example of FIG.

  A shower plate 20 is attached to the upper opening of the head 31 of the liner 2. The shower plate 20 is a gas rectifying plate for uniformly supplying the reaction gas 26 to the surface of the semiconductor substrate 6. The shower plate 20 is provided with a plurality of through holes 21 for supplying the reaction gas 26. Then, the reaction gas 26 is uniformly supplied to the surface of the semiconductor substrate 6 placed on the susceptor 7 in the body 30.

  The inner diameter of the head portion 31 of the liner 2 is determined so as to correspond to the arrangement of the through holes 21 of the shower plate 20 and the size of the semiconductor substrate 6. Thereby, the useless space where the reaction gas 26 that has exited the through hole 21 of the shower plate 20 diffuses can be reduced. That is, the film forming apparatus 100 is configured such that the reaction gas 26 supplied from the shower plate 20 is efficiently collected on the surface of the semiconductor substrate 6.

  In the film forming apparatus 100 of the present embodiment, an inert gas supply unit 4 for supplying an inert gas into the chamber 1 is provided on the upper portion of the chamber 1, separately from the reaction gas supply unit 14. . When the inert gas 25 is supplied from the inert gas supply unit 4, the inert gas 25 flows out from the lower slit 38 through a space formed between the head 31 of the liner 2 and the inner wall of the chamber 1.

  The inert gas 25 is heavier than the hydrogen gas used for the reaction gas 26, and after flowing out from the slit 38, does not go toward the semiconductor substrate 6 but flows down along the inner wall of the body portion 30 of the liner 2. . Then, it reaches the exhaust part 5 and is discharged from the exhaust part 5 to the outside of the chamber 1 together with the unreacted reaction gas 26 and the like. Thus, in the present embodiment, the slit 38 is provided near the trunk portion 30, and the inert gas 25 is caused to flow out from the slit 38 so that the trunk portion 30 is covered with the flow of the inert gas 25. Yes.

  As described above, the susceptor 7 is disposed in the liner 2, more specifically, in the body portion 30. A semiconductor substrate 6 is placed on the susceptor 7. The susceptor 7 is mounted on a hollow cylindrical rotating cylinder 23. The rotating cylinder 23 is connected to a rotating mechanism (not shown) via a rotating shaft 32 extending from the bottom of the chamber 1 to the inside of the chamber 1. That is, the susceptor 7 is rotatably supported and disposed above the heater 8 in the body portion 30 of the liner 2. Therefore, during the vapor phase growth reaction, by rotating the susceptor 7, the semiconductor substrate 6 placed thereon rotates at a high speed.

  Further, in the film forming apparatus 100 shown in FIG. 1, packings 10 and 12 for sealing are used for the flange portion 9 of the chamber 1 and the flange portion 11 of the exhaust portion 5, respectively. The packings 10 and 12 are preferably made of fluororubber, but the heat resistant temperature is about 300 ° C. In the film forming apparatus 100 of the present embodiment, by providing the cooling water flow paths 3a and 3b for cooling the chamber 1, it is possible to prevent the packings 10 and 12 from being deteriorated by heat.

  As the heater 8 for heating the semiconductor substrate 6 from the lower side, a resistance heater configured by covering the surface of the carbon base material with a SiC material is used.

When an SiC epitaxial film is to be formed on the semiconductor substrate 6, as the reaction gas 26, for example, a source gas of silicon (Si) such as silane (SiH ₄ ) or dichlorosilane (SiH ₂ Cl ₂ ), and A mixed gas obtained by mixing a source gas of carbon (C) such as propane (C ₃ H ₈ ) or acetylene (C ₂ H ₂ ) and hydrogen (H ₂ ) gas as a carrier gas is used.

  After the reaction gas 26 is introduced from the reaction gas supply unit 14, the reaction gas 26 is rectified through the through hole 21 of the shower plate 20 disposed in the head portion 31 of the liner 2. Then, it flows down substantially vertically toward the semiconductor substrate 6 in the lower body portion 30. That is, the reaction gas 26 forms a so-called vertical flow. Then, the semiconductor substrate 6 heated by the heater 8 and rotated at high speed on the susceptor 7 is attracted. After reaching the semiconductor substrate 6, it flows almost laminarly in the horizontal direction along the surface of the semiconductor substrate 6 without forming turbulent flow. As described above, the gas is rectified on the surface of the semiconductor substrate 6, thereby forming a high-quality epitaxial film with high film thickness uniformity.

  On the surface of the semiconductor substrate 6, a thermal decomposition reaction or a hydrogen reduction reaction of the reaction gas 26 is performed. Thereby, a SiC epitaxial film is formed on the surface of the semiconductor substrate 6. Of the reaction gas 26, a gas other than the gas used for the vapor phase growth reaction is exhausted from the exhaust unit 5 provided in the lower portion of the chamber 1.

  In the present embodiment, the inert gas 25 is supplied from the inert gas supply unit 4 along with the supply of the reaction gas 26 for forming the SiC epitaxial film, and the inert gas 25 flows out from the lower slit 38. ing. That is, the inert gas 25 exits the slit 38 and flows down along the wall surface of the trunk portion 30 of the liner 2. By doing so, the following effects can be obtained.

  A part of the reaction gas 26 supplied from the reaction gas supply unit 14 is consumed for forming the SiC epitaxial film on the surface of the semiconductor substrate 6, but the remaining gas is directed from the vicinity of the center of the semiconductor substrate 6 toward the outer periphery. Then, the gas is exhausted from an exhaust unit 5 provided at the lower part of the chamber 1.

  Here, in the conventional film forming apparatus 200 described with reference to FIG. 3, the reaction gas 226 that flows toward the outer periphery of the semiconductor substrate 206 collides with the body 230 of the liner 202 and is then exhausted from the exhaust unit 205. It has a structure. Since the body portion 230 is at a high temperature, the reaction product 237 adheres when the reaction gas 226 comes into contact therewith. Here, the reaction product 237 is considered to be a non-dense polycrystalline SiC film, unlike the dense polycrystalline SiC film constituting the liner 202.

  On the other hand, in the film forming apparatus 100 of the present embodiment, since the inert gas 25 flows down along the wall surface of the trunk portion 30, the reaction gas 26 is prevented from contacting the trunk portion 30. Thereby, it can prevent that the reaction product adheres to the trunk | drum 30. FIG.

  As the inert gas 25, one or more gases selected from the group consisting of helium (He) gas, neon (Ne) gas, argon (Ar) gas, krypton (Kr) gas, and xenon (Xe) gas are used. can do. In the present embodiment, an inexpensive and easy-to-handle argon gas is preferably used. Note that it is not preferable to use hydrogen gas instead of the inert gas. This is because hydrogen gas is usually used as a reaction gas as a carrier gas and is light, so that the protection effect of the body 30 as in the case of using an inert gas cannot be expected.

  The flow rate of the inert gas 25 supplied from the inert gas supply unit 4 and flowing out from the slit 38 is set to an appropriate value in consideration of the flow rate of the reaction gas 26 used for forming the SiC epitaxial film. . If the flow rate of the inert gas 25 is too small, the reaction gas 26 cannot be sufficiently prevented from contacting the body 30. On the other hand, if the flow rate of the inert gas 25 is too large, the rectification state of the reaction gas 26 formed on the surface of the semiconductor substrate 6 may be disturbed.

  The flow rate of the inert gas 25 can be adjusted not only by adjusting the amount of the inert gas 25 supplied from the inert gas supply unit 4 but also by the size of the slit 38. For example, the flow rate of the inert gas 26 required at the time of designing the film forming apparatus 100 is roughly estimated to determine the size of the slit 38 and supplied from the inert gas supply unit 4 when the film forming apparatus 100 is in operation. The amount of the inert gas 25 flowing down from the slit 38 is adjusted by adjusting the flow rate of the inert gas 25.

  FIG. 2 shows another example of the film forming apparatus of this embodiment. In this film forming apparatus, a heater is also provided above the semiconductor substrate in order to efficiently heat the semiconductor substrate. In addition, it has shown that the part which attached | subjected the same code | symbol as FIG. 1 is the same.

  2 has an upper heater 18 in a space formed between the liner 2 and the inner wall of the chamber 1. The upper heater 18 is provided in the vicinity of the semiconductor substrate 6, that is, in the collar portion 34 constituting the head portion 31. As the upper heater 18, a resistance heater configured by covering the surface of a carbon base material with a SiC material is used.

  When the inert gas 25 is supplied from the inert gas supply unit 4, the inert gas 25 flows down toward the slit 38 while purging around the upper heater 18. Thereafter, the inert gas 25 flows out from the slit 38 and flows down along the trunk portion 30 as in the case of the film forming apparatus 100 described above. Thereafter, the inert gas 25 is discharged from the exhaust unit 5. By doing in this way, since the contact of the reaction gas 26 with the trunk | drum 30 is prevented, it can prevent that a reaction product adheres to the trunk | drum 30. FIG.

  Further, since the inert gas 25 does not react with the members constituting the upper heater 18, it does not adversely affect the upper heater 18. On the other hand, in the conventional film forming apparatus 200 described with reference to FIG. 3, hydrogen gas 225 is supplied to the space between the liner 202 and the inner wall of the chamber 201. In this case, the following problems occur.

It is known that SiC and hydrogen gas react at high temperatures. For this reason, when hydrogen gas touches the heater during the epitaxial growth of SiC, SiC that covers the surface of the heater reacts with hydrogen gas to decompose SiC. Then, the underlying carbon is exposed and this carbon reacts with hydrogen gas according to the following formula.
C + 2H ₂ → CH ₄
Such a reaction between the heater base material and the hydrogen gas deteriorates the heater and shortens the life of the heater in the film forming apparatus.

  Therefore, when the upper heater is provided in the conventional film forming apparatus 200, the members constituting the upper heater react with the hydrogen gas, resulting in shortening the life of the upper heater. On the other hand, according to the film forming apparatus 110 of FIG. 2, the upper heater 18 is placed in an inert gas atmosphere, so that such a problem does not occur.

  Next, the film forming method of this embodiment will be described. The film forming method of the present embodiment is particularly suitable for forming a SiC epitaxial film. Therefore, this method will be described with reference to the film forming apparatus 100 shown in FIG.

  First, the semiconductor substrate 6 is carried into the chamber 1 and placed on the susceptor 7. Next, the semiconductor substrate 6 placed on the susceptor 7 is rotated at about 50 rpm in association with the rotating cylinder 23 and the susceptor 7.

  Next, an electric current is supplied to the heater 8 to operate, and the semiconductor substrate 6 is heated by heat generated from the heater 8. The semiconductor substrate 6 is gradually heated until it reaches a predetermined temperature between 1500 ° C. and 1700 ° C., which is the film formation temperature, for example, 1600 ° C. At this time, the temperature of the heater 8 is in a high temperature state of about 1800 ° C. Therefore, cooling water is allowed to flow through the flow paths 3a and 3b provided in the wall portion of the chamber 1 to prevent the temperature of the chamber 1 from rising excessively.

  After the temperature of the semiconductor substrate 6 reaches 1600 ° C., the heater 8 performs precise temperature adjustment around 1600 ° C. At this time, the temperature of the semiconductor substrate 6 is performed using a radiation thermometer (not shown) attached outside the chamber 1. After confirming that the temperature of the semiconductor substrate 6 has reached a predetermined temperature by measurement with a radiation thermometer, the rotational speed of the semiconductor substrate 6 is gradually increased. For example, the rotation speed is preferably about 900 rpm.

  Next, the reaction gas 26 is supplied from the reaction gas supply unit 14, and the reaction gas 26 is caused to flow onto the semiconductor substrate 6 placed in the body 30 of the liner 2 through the shower plate 20. Then, the reaction gas 26 is rectified through the through hole 21 of the shower plate 20 that is a rectifying plate, and flows down substantially vertically toward the semiconductor substrate 6 below. That is, a so-called vertical flow is formed.

  Simultaneously with the supply of the reaction gas 26, the argon gas is supplied from the inert gas supply unit 4. The argon gas introduced into the space formed between the liner 2 and the inner wall of the chamber 1 flows out from the slit 38, then flows down along the inner wall of the body 30, and is discharged from the exhaust unit 5. Such a flow of argon gas prevents the reaction gas 26 from contacting the body 30. Therefore, it is possible to prevent the reaction product from adhering to the trunk portion 30.

  In the region from the head portion 31 to the body portion 30 of the liner 2, the reaction gas 26 flows down toward the semiconductor substrate 6, and a rectified state is obtained on the surface of the semiconductor substrate 6. When the reaction gas 26 reaches the surface of the heated semiconductor substrate 6, the reaction gas 26 causes a thermal decomposition reaction or a hydrogen reduction reaction to form a SiC epitaxial film on the surface of the semiconductor substrate 6.

  After the SiC epitaxial film having a predetermined thickness is formed on the semiconductor substrate 6, the supply of the reaction gas 26 is terminated. The supply of the hydrogen gas as the carrier gas can also be terminated upon completion of the formation of the epitaxial film, but is terminated after confirming that the semiconductor substrate 6 has become lower than a predetermined temperature by measurement with a radiation thermometer. You may do it. On the other hand, the supply of the argon gas as the inert gas 25 is terminated after the supply of the reaction gas 26 is stopped in order to prevent the reaction gas 26 from coming into contact with the body portion 30.

  After confirming that the semiconductor substrate 6 has been cooled to a predetermined temperature, the semiconductor substrate 6 is carried out of the chamber 1.

  Although the film forming apparatus and the film forming method of the present embodiment have been described above by taking the film formation of the SiC film as an example, the present invention is not limited to this. That is, the present invention can be applied to other film forming apparatuses and film forming methods such as a Si film.

  In addition, this invention is not limited to the said embodiment, It can implement in various deformation | transformation in the range which does not deviate from a summary.

1, 201 Chamber 2, 202 Liner 3a, 3b, 203a, 203b Flow path 4 Inert gas supply part 5, 205 Exhaust part 6, 206 Semiconductor substrate 7, 207 Susceptor 8, 208 Heater 9, 11, 209, 211 Flange part 10, 12, 210, 212 Packing 14, 214 Reaction gas supply unit 18 Upper heater 20, 220 Shower plate 21, 221 Through hole 23, 223 Rotating cylinder 25 Inert gas 26, 226 Reaction gas 30, 230 Body 31, 231 Head portion 32, 232 Rotating shaft 34 Brim portion 38 Slit 100, 110, 200 Film forming apparatus 204 Hydrogen gas supply portion 225 Hydrogen gas 234 Connection portion 237 Reaction product

Claims (5)

A deposition chamber;
A reaction gas supply unit for supplying a reaction gas into the film forming chamber;
An inert gas supply unit for supplying an inert gas into the film forming chamber;
A hollow cylindrical liner provided in the film forming chamber;
A susceptor provided in the liner and on which a substrate is placed;
A film forming apparatus, wherein the inert gas flows down along an inner wall of the liner.   The liner has a configuration in which a head serving as a flow path for the reaction gas and a body portion in which the susceptor is disposed are disposed via a slit, and the inert gas flows down from the slit. The film forming apparatus according to claim 1, wherein the film forming apparatus is configured as described above.   The liner head has a flange portion having an inner diameter smaller than that of the body portion and formed along the periphery of the lower end portion, and the slit is between the collar portion and the upper end portion of the body portion. The film forming apparatus according to claim 2, wherein the film forming apparatus is provided.   The film forming apparatus according to claim 1, wherein the inert gas is an argon (Ar) gas. A film forming method for forming a predetermined film on the substrate by supplying a reaction gas to the film forming chamber while heating the substrate in a hollow cylindrical liner disposed in the film forming chamber,
The liner is configured such that a head portion serving as a flow path for the reaction gas and a body portion in which the substrate is disposed are disposed via a slit,
A film forming method, wherein an inert gas is supplied to the film forming chamber, and the film is formed while flowing the inert gas from the slit along the inner wall of the liner.

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