CN104465450B - Gas supply device and method for cooling static sucker - Google Patents
Gas supply device and method for cooling static sucker Download PDFInfo
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- CN104465450B CN104465450B CN201310431420.0A CN201310431420A CN104465450B CN 104465450 B CN104465450 B CN 104465450B CN 201310431420 A CN201310431420 A CN 201310431420A CN 104465450 B CN104465450 B CN 104465450B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a gas supply device and method for a cooling static sucker. Reaction gas with first pressure is changed into first process gas with second pressure through a flow divider in a first gas path and the first process gas is delivered to a substrate placed on the static sucker for reaction treatment; a second branch gas path is communicated with a pipeline in front of the flow divider, a path of reaction gas is divided or the reaction gas is mixed with diluent gas so as to form second process gas with first pressure, the second process gas is delivered to the edge of the back face of the substrate through gas channels on the edge in the static sucker, helium or the second process gas is delivered to the center of the surface of the substrate through the gas channels in the center, and therefore the heat transfer cooling effect is achieved. Due to the fact that the composition of the first process gas and the composition of the second process gas are the same or are quite similar, reaction conditions needed for substrate edge treatment are fundamentally not changed when the first process gas and the second process gas are mixed; the high-pressure second process gas is large in pressure supply range, the defect that heat conduction efficiency is lower than that of helium can be effectively overcome, and the cooling effect is guaranteed.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of feeder and supply for cooling down electrostatic chuck
Method.
Background technology
It is as shown in Figure 1 a kind of structural representation of existing vacuum processing chamber 10.Process gas 40 enters vacuum from top
In process chamber 10, the surface of substrate 30 is performed etching, thin film deposition or other some process.In the vacuum processing chamber 10
Bottom is provided with electrostatic chuck 20, props up for being fixed to the substrate 30 being positioned on the electrostatic chuck 20 in processing procedure
Hold.Helium 60, first via some gas passages 50 opened up in electrostatic chuck 20, passes from below through the electrostatic as cooling gas
Sucker 20 reaches its top surface, then the back of the body of whole substrate 30 is flow through in the gap between the back side of substrate 30 and the top surface of electrostatic chuck 20
Face is conducted heat, to realize the cooling to substrate 30.However, helium 60 can be leaked at the edge of substrate 30, and and technique
Gas 40 is mixed（Label 70 show the Mixed Zone of gas）, so that the reaction condition at the edge of substrate 30 is changed
Become, the effect after causing the center of substrate 30 to be made with marginal area is inconsistent.
Current solution is that the diameter of substrate 30 is put in the smaller face thereon of diameter for making electrostatic chuck 20, allows substrate
30 can cover all electrostatic chuck 20, so as to the Mixed Zone of helium 60 and process gas 40 is limited under substrate 30
Side.But, in order to obtain more preferable Temperature Distribution on the substrate 30, the size for increasing electrostatic chuck is inexorable trend, above-mentioned
Solution but runs in the opposite direction therewith.Therefore, in this case, a kind of new electrostatic chuck and supply scheme are needed badly.
The content of the invention
It is an object of the invention to provide a kind of feeder, and the air supply method of change wherein cooling gas, in big chi
Process gas replaces or part replaces helium as cooling gas to avoid substrate edge gas mixing used in very little electrostatic chuck
In causing the embodiment that reaction condition changes, by increase to pressure during substrate edge conveying process gas, come more
Process gas heat transfer efficiency is mended less than the deficiency of helium to guarantee the cooling effect to substrate.
In order to achieve the above object, first technical scheme of the invention is to provide a kind of confession for cooling down electrostatic chuck
Device of air, the electrostatic chuck is located at the bottom in application of vacuum room, and the substrate to being placed on the electrostatic chuck is fixed
Support；
The feeder includes the first gas circuit and the second gas circuit；First gas circuit is by with second pressure first
Process gas is transported in application of vacuum room, to carry out reaction treatment to substrate surface；
Some gas passages are offered in the electrostatic chuck；Second gas circuit is by the second technique with first pressure
Gas is at least transported in the corresponding gas passage of edges of electrostatic chuck so that second technique as cooling gas
Gas can flow into the space between substrate back and electrostatic chuck top surface, in order to carry out heat transfer cooling to substrate；
Wherein, second process gas is the only reacting gas comprising first process gas composition or described
The mixed gas of reacting gas and diluent gas；Also, the first pressure that second process gas has is higher than described first
The second pressure that process gas has.
Preferably, first gas circuit is provided with leading portion pipeline, and the reacting gas with first pressure is transported to into diverter,
Changed by diverter and form first process gas with second pressure all the way；First gas circuit is additionally provided with back segment pipe
Road, first process gas is transported in the application of vacuum room；
Second gas circuit is connected to the leading portion pipeline of first gas circuit, in order to separate from the reacting gas
All the way the gas with first pressure is used as second process gas, and is transported to electrostatic chuck by second gas circuit.
Preferably, second gas circuit is connected to by collateral branch's gas circuit, to conveyed via second gas circuit
The gas after a small amount of diluent gas is mixed in the reacting gas of road as second process gas.
Preferably, the diluent gas is noble gases or active gasess.
Preferably, the noble gases are any one or its in helium, neon, argon, Krypton, xenon or nitrogen
Meaning combination.
Preferably, the active gasess are oxygen-containing gas.
Preferably, the pressure or flow being provided with second gas circuit when conveying to second process gas is further
It is controlled the device of regulation.
In preferred embodiment, the electrostatic chuck diameter is equal to or more than the diameter of substrate；
The electrostatic chuck is provided with central area, and around the marginal area of the central area；The electrostatic is inhaled
In the gas passage of disk, comprising some groups of first passages positioned at central area, and lead to positioned at some groups second of marginal area
Road；
Second process gas is delivered to the second channel marginal position of substrate back, and described first leads to
Helium is delivered to the center of substrate back to carry out heat transfer cooling by road；Or, the first passage and second channel are all
Second process gas is conveyed, in order to carry out heat transfer cooling to the whole back side of substrate.
Preferably, gas pressure during second process gas is conveyed by second channel, more than by first passage
Gas pressure during conveying helium.
A kind of feeder for cooling down electrostatic chuck is provided in a preferred embodiment of the present invention, the electrostatic is inhaled
Disk is located at the bottom in application of vacuum room, and the substrate to being placed on the electrostatic chuck is fixed support；
The feeder includes the first gas circuit and the second gas circuit；First gas circuit is provided with leading portion pipeline, will have
The reacting gas of first pressure is transported to diverter, and the first process gas formed with second pressure is changed by diverter；Institute
State the first gas circuit and be additionally provided with back segment pipeline, first process gas is transported in application of vacuum room, to enter to substrate surface
Row reaction treatment；
The second process gas with first pressure is transported in electrostatic chuck as cooling gas by the second gas circuit
In the corresponding gas passage for opening up so that second process gas can be flowed between substrate back and electrostatic chuck top surface
Space, in order to carry out heat transfer cooling to substrate；
Second gas circuit is connected to the leading portion pipeline of first gas circuit, described all the way anti-from what is wherein separated to obtain
Answer gas；One collateral branch's gas circuit of control accesses second gas circuit and conveys diluent gas, makes second process gas be institute
State the mixed gas of reacting gas and diluent gas；Or, control collateral branch's gas circuit and do not access second gas circuit, make described
Second process gas is the reacting gas for only including the first process gas composition；
Wherein, the first pressure that second process gas has is higher than the second pressure that first process gas has
Power.
Another technical scheme of the present invention is to provide a kind of air supply method for cooling down electrostatic chuck：
The reacting gas with first pressure is converted to into the first process gas with second pressure in the first gas circuit,
While using the gas all the way separated from the reacting gas with first pressure as the second process gas in the second gas circuit
Body, or the mixed gas of the gas that this is separated all the way and diluent gas are used as the second process gas；Second process gas
The first pressure that body has is higher than the second pressure that first process gas has；
First process gas is transported in application of vacuum room, the substrate to being positioned on electrostatic chuck reacts
Process；Using second process gas as cooling gas, by the gas passage in the electrostatic chuck positioned at marginal area,
Convey to the marginal position of substrate back；Also by the gas passage for being located at central area in the electrostatic chuck, to substrate back
Center conveying helium or convey second process gas, heat transfer cooling is carried out to substrate.
Preferably, by being mixed into a small amount of noble gases or active gas in the reacting gas all the way that conveys to second gas circuit
Body is forming second process gas.
Preferably, the gas pressure that second process gas carries out conducting heat when cooling down is conveyed, more than by conveying helium
Carry out the gas pressure conducted heat when cooling down.
Compare and helium is used alone as the scheme of cooling gas in electrostatic chuck described in background technology, will in the present invention
First process gas composition used with during substrate surface treatment be identical or the second process gas closely, replaces helium conveying
Whole positions of marginal position or substrate back to substrate back carry out heat transfer cooling to substrate, can be prevented effectively from substrate
Edge is because gas with various mixing causes to process the problem that reaction condition changes and occurs, therefore can apply to bigger quiet of size
Electric sucker, so as to obtain more preferable Temperature Distribution effect on substrate.
By improving pressure during the second process gas of conveying in the present invention, its heat transfer efficiency can be made up less than helium
Deficiency, to guarantee the heat transfer cooling effect to substrate；And the pressure extent of supply of the second process gas is bigger.By from supply
In holding the gas circuit before diverter, second process gas of the reacting gas as cooling of high pressure all the way are directly synchronously drawn
Body, the variation to existing equipment gas circuit is little, transforms easy to implement, and is able to ensure that second process gas and diverter of acquisition
Afterwards the first process gas species of low pressure is identical.
When the second process gas be with the first process gas composition identical reacting gas with connect by collateral branch's gas circuit
During the mixed gas of the diluent gas for entering, diluent gas（Such as helium）It is more, then good cooling results, but the response speed at edge
It is low；Reacting gas is more, then edge response speed obtains back-off, but cooling effect needs very atmospheric pressure to realize.This two
It is only two extreme cases to plant composition, is required according to cooling under different application occasion and the difference of reaction rate compensation is required,
The mixed proportion for adjusting reacting gas and diluent gas in the second process gas can be selected.
Description of the drawings
Fig. 1 is the schematic diagram of existing vacuum processing chamber and its supply situation；
Fig. 2 is the schematic diagram for using the vacuum processing chamber of electrostatic chuck described in the embodiment of the present invention 1 and its supply situation；
Fig. 3 is the top view of gas passage in electrostatic chuck described in the embodiment of the present invention 1；
Fig. 4 is the schematic diagram for using the vacuum processing chamber of electrostatic chuck described in the embodiment of the present invention 2 and its supply situation；
Fig. 5 is the top view of gas passage in electrostatic chuck described in the embodiment of the present invention 2；
Fig. 6 is the supply situation schematic diagram of feeder of the present invention；
Fig. 7 is another kind of supply situation schematic diagram of feeder of the present invention.
Specific embodiment
As shown in Figure 2, Figure 4 shows, the bottom in vacuum processing chamber 1 is provided with electrostatic of the diameter equal to or more than the diameter of substrate 3
Sucker 2, for being fixed support to placing superincumbent substrate 3.First process gas 40 imports vacuum processing chamber 1 from top
It is interior, the surface of substrate 3 is performed etching or other process.To the second process gas 80 or 80 all the way ' replace or part replacement helium
As cooling gas, via the corresponding gas passage opened up in electrostatic chuck 2, the back side of substrate 3 and the top surface of electrostatic chuck 2 are transported to
Between space, heat transfer cooling is carried out to substrate 3.Made using identical with the composition of the first process gas 40 or closely gas
For the second process gas 80 or 80 ', so as to be prevented effectively from the edge of substrate 3 because variety classes gas mixing causes reaction condition to change
The problem of change occurs.
Due to the second process gas 80 or 80 '（That is, the first process gas 40）Low thermal conductivity in helium, in order to overcome
Two process gas 80 or 80 ' not as the problem of helium, offer one kind is passed through in the present invention can increase second to heat transfer cooling effect
Process gas 80 or 80 ' feeder of pressure is imported improving.
In one embodiment as shown in Figure 6, the gases at high pressure from source of the gas are mixed to form the feeder of the present invention
Leading portion pipeline gas with first pressure output, by the diverter 7 arranged in the first gas circuit（gas splitter）Will be front
Reacting gas with first pressure in Duan Guanlu, if being converted into the gas that main line has second pressure, first pressure is higher than
Second pressure.Wherein the reacting gas with first pressure can be divided into central area and marginal area, Huo Zheji by diverter 7
Marginal area is supplied respectively, and zones of different has different flows.In the back segment pipeline of the first gas circuit, wherein for being formed
Road has the gas of second pressure as the first described process gas 40, imports in vacuum processing chamber 1, for base from top
The process on the surface of piece 3.It can also be gas tip structure that back segment pipeline can be the air hole structure in gas spray, main real
The gas of the existing rear end of diverter 7 is uniformly passed through the reaction chamber of processing substrate.One the second gas circuit is set and is communicated to described first
The leading portion pipeline of correspondence first pressure in gas circuit, so as to separate in the reacting gas with first pressure all the way as described
Second process gas 80, and the instead cooling gas of helium or part replacement helium are transported at electrostatic chuck 2.
Specifically, described reacting gas can be mixed to form by several gas A ~ Z, and its composition and proportioning are all
It is the e.g. SF determining according to the target substance of etching6, CHF3Etc., do not enumerate herein.In order to match at etching
The needs of reason, just using its reduced pressure to second pressure so as to use as the first process gas 40.Second work
Skill gas 80 is then the reacting gas for directly leading out, thus its composition and proportioning be with the first process gas 40 it is on all four,
But difference is that the first pressure that the second process gas 80 has is higher.Further can arrange to second in the second gas circuit
Flow, pressure of process gas 80 etc. are controlled the device of regulation（Not shown in figure）, to expand its extent of supply.The present invention
Can also according to cool down and prevent dilute marginal area reacting gas need individually obtain a kind of cooling containing reacting gas
Reactant gas source, the cooling reactant gas source selects as needed the gas of different content in A ~ Z to be mixed, the cooling reaction of output
Gas pressure is close to first pressure, by the marginal area of pipeline supply to electrostatic chuck.In cooling reacting gas now
The content of helium can be higher than the content of original first process gas 40, or the content of other noble gases is higher.This
Invention can more effectively realize the cooling of wafer through the cooling reacting gas composition of optimization.
The feeder of the present invention will have in first gas circuit in another embodiment as shown in Figure 7 by diverter 7
There is the reacting gas of first pressure, be reduced to the process base that the first process gas 40 of second pressure is conveyed to vacuum processing chamber 1
This is identical.And in the reacting gas all the way that will be separated by the second gas circuit, further it is mixed into what is formed after a small amount of diluent gas
Used as the second process gas 80 ', the first pressure that second process gas 80 ' has is higher than the first process gas 40 to mixed gas
Second pressure.Because the content shared by diluent gas is minimum, the second process gas 80 ' is remained and the first 40 one-tenth of process gas
Divide gas closely.
Described diluent gas can be noble gases, for example：Helium, neon, argon, Krypton, xenon, nitrogen or its
Its suitable noble gas, can pass through the concentration of appropriate the first process gas 40 for changing the edge of substrate 3, so as to flexible
（Accelerate or slow down）The speed etched on substrate 3.Or, described diluent gas can also be active gasess, e.g. oxygen
Or other suitable active gasess, compensate such that it is able to erode due to the substrate 3 caused by other reasons it is non-
Even sex differernce.
Coordinate referring to the embodiment shown in Fig. 2, Fig. 3, the first process gas 40 with second pressure is imported to from top
In vacuum processing chamber 1, process reaction is carried out to substrate 3.The some groups of gas passages 50 opened up in electrostatic chuck 2, are all used for
Second process gas 80 or 80 of the conveying with first pressure ', it is used to cool down with replacing whole helium.Every group of gas passage
50 are arranged separately on the annulus with the center of electrostatic chuck 2 as the center of circle, the annulus concentric arrangement that each group gas passage 50 is located.
After being transported to the top surface of electrostatic chuck 2, second process gas 80 or 80 ' just at the opening of each gas passage 50 to
Surrounding is divergently blowed, and heat transfer cooling is realized in each position in order to rapid contact substrate 3 back side.
Coordinate referring to another embodiment shown in Fig. 4, Fig. 5, the first process gas 40 with second pressure is from top
Import in vacuum processing chamber 1, process reaction is carried out to substrate 3.The gas passage opened up in electrostatic chuck 2 is divided into for defeated
Send the first passage 51 of helium, and for conveying the second process gas 80 or 80 of first pressure ' second channel 52, some groups
First passage 51 is arranged separately in the central area 91 of electrostatic chuck 2, on some annulus with the center of electrostatic chuck 2 as the center of circle；
Some groups of second channels 52 are arranged separately on and are in the marginal area 92 of central area 91, with the center of electrostatic chuck 2
On the other annulus in the center of circle（The situation of only one group of second channel 52 is illustrated that in Fig. 5）；The institute of each group second channel 52
The annulus concentric arrangement that is located of annulus and each group first passage 52.
Wherein, helium 60 sends backward surrounding diverging in order to rapid contact substrate 3 back side from the opening of first passage 51
Most of position.Meanwhile, second channel 52 can be designed to make the second process gas 80 or 80 ' major part flows to base
The structure of the marginal position of piece 3（For example slightly change opening direction of second channel 52 etc.）.Furthermore it is also possible to make by second
Passage 52 convey the second process gas 80 or 80 ' when first pressure more than by first passage 51 convey helium when pressure,
To adapt to improve the second process gas 80 or 80 ' effect for cooling down that the edge of substrate 3 is conducted heat, and effectively by helium and the first work
Skill gas 40 separates.
In sum, the structure and air supply method shown in each embodiment of the invention, used in large scale electrostatic chuck
Process gas replaces or part replaces helium as cooling gas to avoid substrate edge gas mixing from causing reaction condition to occur
In the embodiment of change, process gas heat conduction effect is made up to pressure during substrate edge conveying process gas by increase
Rate guarantees the cooling effect to substrate less than the deficiency of helium.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
Various modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (13)
1. a kind of feeder for cooling down electrostatic chuck, the electrostatic chuck（2）Positioned at vacuum processing chamber（1）Interior bottom
Portion, to being placed on the electrostatic chuck（2）On substrate（3）It is fixed support；Characterized in that, the feeder includes
First gas circuit and the second gas circuit；
First gas circuit is by the first process gas with second pressure（40）It is transported to vacuum processing chamber（1）It is interior, to base
Piece（3）Surface carries out reaction treatment；
The electrostatic chuck（2）In offer some gas passages；Second gas circuit is by the second technique with first pressure
Gas（80,80 '）As cooling gas, at least it is transported to positioned at electrostatic chuck（2）In the corresponding gas passage at edge so that institute
State the second process gas（80,80 '）Substrate can be flowed into（3）The back side and electrostatic chuck（2）Space between top surface, in order to right
Substrate（3）Carry out heat transfer cooling；
Wherein, second process gas（80,80 '）It is only to include first process gas（40）The reacting gas of composition or
Person is the mixed gas of the reacting gas and diluent gas；Second process gas（80,80 '）The first pressure having is high
In first process gas（40）The second pressure having.
2. feeder as claimed in claim 1, it is characterised in that
First gas circuit is provided with leading portion pipeline, and the reacting gas with first pressure is transported to into diverter（7）, by diverter
（7）Conversion forms first process gas with second pressure all the way（40）；First gas circuit is additionally provided with back segment pipeline,
By first process gas（40）It is transported to the vacuum processing chamber（1）It is interior；
Second gas circuit is connected to the leading portion pipeline of first gas circuit, in order to separate all the way from the reacting gas
Gas with first pressure is used as second process gas（80）, and electrostatic chuck is transported to by second gas circuit
（2）.
3. feeder as claimed in claim 2, it is characterised in that
Second gas circuit is connected to by collateral branch's gas circuit, in the reacting gas all the way conveyed via second gas circuit
The gas after diluent gas is mixed into as second process gas（80’）.
4. feeder as claimed in claim 3, it is characterised in that
The diluent gas is noble gases or active gasess.
5. feeder as claimed in claim 4, it is characterised in that
The noble gases are any one in helium, neon, argon, Krypton, xenon or nitrogen or its combination in any.
6. feeder as claimed in claim 4, it is characterised in that
The active gasess are oxygen-containing gas.
7. feeder as claimed in claim 3, it is characterised in that
It is provided with second gas circuit to second process gas（80、80’）Pressure or flow during conveying further enters
The device of row control and regulation.
8. feeder as claimed in claim 3, it is characterised in that
The electrostatic chuck（2）Diameter is equal to or more than substrate（3）Diameter；
The electrostatic chuck（2）It is provided with central area（91）, and around the central area（91）Marginal area（92）；
The electrostatic chuck（2）Gas passage in, comprising positioned at central area（91）Some groups of first passages（51）, and positioned at side
Edge region（92）Some groups of second channels（52）；
The second channel（52）By second process gas（80、80’）It is delivered to substrate（3）The marginal position at the back side, and
And the first passage（51）Helium is delivered to into substrate（3）The center at the back side is carrying out heat transfer cooling；Or, described
One passage（51）And second channel（52）All convey second process gas（80、80’）, in order to substrate（3）It is whole
The back side carries out heat transfer cooling.
9. feeder as claimed in claim 8, it is characterised in that
By second channel（52）Convey second process gas（80、80’）When gas pressure, more than by first passage
（51）Gas pressure during conveying helium.
10. a kind of feeder for cooling down electrostatic chuck, the electrostatic chuck（2）Positioned at vacuum processing chamber（1）Interior bottom
Portion, to being placed on the electrostatic chuck（2）On substrate（3）It is fixed support；Characterized in that, the feeder includes
First gas circuit and the second gas circuit；
First gas circuit is provided with leading portion pipeline, and the reacting gas with first pressure is transported to into diverter（7）, by diverter
（7）Conversion forms the first process gas with second pressure（40）；First gas circuit is additionally provided with back segment pipeline, by described
One process gas（40）It is transported to vacuum processing chamber（1）It is interior, to substrate（3）Surface carries out reaction treatment；
By the second gas circuit by the second process gas with first pressure（80）As cooling gas, electrostatic chuck is transported to
（2）In the corresponding gas passage for inside opening up so that second process gas（80）Substrate can be flowed into（3）Inhale with electrostatic at the back side
Disk（2）Space between top surface, in order to substrate（3）Carry out heat transfer cooling；
Second gas circuit is connected to the leading portion pipeline of first gas circuit, to obtain from the reaction gas described all the way for wherein separating
Body；One collateral branch's gas circuit of control accesses second gas circuit and conveys diluent gas, makes second process gas（80’）It is institute
State the mixed gas of reacting gas and diluent gas；Or, control collateral branch's gas circuit and do not access second gas circuit, make described
Second process gas（80）It is only to include the first process gas（40）The reacting gas of composition；
Wherein, second process gas（80,80 '）The first pressure having is higher than first process gas（40）Have
Second pressure.
A kind of 11. air supply methods for cooling down electrostatic chuck, it is characterised in that
Reacting gas with first pressure is converted to the first process gas with second pressure in the first gas circuit（40）,
While using the gas all the way separated from the reacting gas with first pressure as the second process gas in the second gas circuit
Body（80）, or the mixed gas of the gas that this is separated all the way and diluent gas are used as the second process gas（80’）；Described
Two process gas（80,80 '）The first pressure having is higher than first process gas（40）The second pressure having；
By first process gas（40）It is transported to vacuum processing chamber（1）It is interior, to being positioned over electrostatic chuck（2）On substrate
（3）Carry out reaction treatment；By second process gas（80,80 '）As cooling gas, by the electrostatic chuck（2）In
Positioned at marginal area（92）Gas passage, to substrate（3）The marginal position conveying at the back side；Also pass through the electrostatic chuck（2）In
Positioned at central area（91）Gas passage, to substrate（3）The center conveying helium at the back side conveys second technique
Gas（80,80 '）, to substrate（3）Carry out heat transfer cooling.
12. air supply methods as claimed in claim 11, it is characterised in that
Described is formed by being mixed into noble gases or active gasess in the reacting gas all the way that conveys to second gas circuit
Two process gas（80’）.
13. air supply methods as described in claim 11 or 12, it is characterised in that
Convey second process gas（80、80’）Carry out conduct heat cooling when gas pressure, more than by conveying helium carry out
Gas pressure during heat transfer cooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310431420.0A CN104465450B (en) | 2013-09-22 | 2013-09-22 | Gas supply device and method for cooling static sucker |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310431420.0A CN104465450B (en) | 2013-09-22 | 2013-09-22 | Gas supply device and method for cooling static sucker |
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| Publication Number | Publication Date |
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| CN104465450A CN104465450A (en) | 2015-03-25 |
| CN104465450B true CN104465450B (en) | 2017-05-10 |
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| CN110459493B (en) * | 2019-08-21 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Evacuation chamber and evacuation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5883778A (en) * | 1994-02-28 | 1999-03-16 | Applied Materials, Inc. | Electrostatic chuck with fluid flow regulator |
| CN101276734A (en) * | 2007-03-30 | 2008-10-01 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN101477945A (en) * | 2008-12-30 | 2009-07-08 | 中微半导体设备(上海)有限公司 | Method and apparatus for preventing/reducing substrate back polymer deposition |
| CN102741998A (en) * | 2010-01-29 | 2012-10-17 | 住友大阪水泥股份有限公司 | Electrostatic chuck apparatus |
| CN103107119A (en) * | 2011-11-09 | 2013-05-15 | 东京毅力科创株式会社 | Substrate cooling system, substrate processing apparatus, electrostatic chuck and substrate cooling method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP5222442B2 (en) * | 2008-02-06 | 2013-06-26 | 東京エレクトロン株式会社 | Substrate mounting table, substrate processing apparatus, and temperature control method for substrate to be processed |
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| US5883778A (en) * | 1994-02-28 | 1999-03-16 | Applied Materials, Inc. | Electrostatic chuck with fluid flow regulator |
| CN101276734A (en) * | 2007-03-30 | 2008-10-01 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN101477945A (en) * | 2008-12-30 | 2009-07-08 | 中微半导体设备(上海)有限公司 | Method and apparatus for preventing/reducing substrate back polymer deposition |
| CN102741998A (en) * | 2010-01-29 | 2012-10-17 | 住友大阪水泥股份有限公司 | Electrostatic chuck apparatus |
| CN103107119A (en) * | 2011-11-09 | 2013-05-15 | 东京毅力科创株式会社 | Substrate cooling system, substrate processing apparatus, electrostatic chuck and substrate cooling method |
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| CN104465450A (en) | 2015-03-25 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |