CN104425690B - 发光器件封装 - Google Patents

发光器件封装 Download PDF

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Publication number
CN104425690B
CN104425690B CN201410448543.XA CN201410448543A CN104425690B CN 104425690 B CN104425690 B CN 104425690B CN 201410448543 A CN201410448543 A CN 201410448543A CN 104425690 B CN104425690 B CN 104425690B
Authority
CN
China
Prior art keywords
lead frame
light emitting
emitting device
device package
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410448543.XA
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English (en)
Chinese (zh)
Other versions
CN104425690A (zh
Inventor
闵凤杰
金元中
李兴柱
任仓满
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN104425690A publication Critical patent/CN104425690A/zh
Application granted granted Critical
Publication of CN104425690B publication Critical patent/CN104425690B/zh
Active legal-status Critical Current
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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/852Encapsulations
    • H10H20/853Encapsulations characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Planar Illumination Modules (AREA)
CN201410448543.XA 2013-09-04 2014-09-04 发光器件封装 Active CN104425690B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2013-0105865 2013-09-04
KR1020130105865A KR102076243B1 (ko) 2013-09-04 2013-09-04 발광 소자 패키지

Publications (2)

Publication Number Publication Date
CN104425690A CN104425690A (zh) 2015-03-18
CN104425690B true CN104425690B (zh) 2019-03-15

Family

ID=51429137

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410448543.XA Active CN104425690B (zh) 2013-09-04 2014-09-04 发光器件封装

Country Status (5)

Country Link
US (1) US9929329B2 (enExample)
EP (1) EP2846368B1 (enExample)
JP (1) JP6442199B2 (enExample)
KR (1) KR102076243B1 (enExample)
CN (1) CN104425690B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9437793B2 (en) * 2014-02-21 2016-09-06 Xiamen Sanan Optoelectronics Technology Co., Ltd. Package support, fabrication method and LED package
USD778848S1 (en) * 2015-04-07 2017-02-14 Cree, Inc. Solid state light emitter component
JP6118437B1 (ja) * 2015-12-21 2017-04-19 ルーメンス カンパニー リミテッド Ledモジュール
JP1566953S (enExample) * 2016-04-28 2017-01-16
CN108533981A (zh) * 2017-03-02 2018-09-14 展晶科技(深圳)有限公司 发光元件
US10020426B1 (en) 2017-04-10 2018-07-10 Advanced Optoelectronic Technology, Inc Light emitting device
JP7257247B2 (ja) * 2019-05-16 2023-04-13 スタンレー電気株式会社 発光装置
JP7300089B2 (ja) * 2019-10-08 2023-06-29 日本電気硝子株式会社 保護キャップ、発光装置および保護キャップの製造方法
US11119862B2 (en) 2019-10-11 2021-09-14 Seagate Technology Llc Delta information volumes to enable chained replication of data by uploading snapshots of data to cloud
CN113302757B (zh) * 2021-03-03 2023-12-05 泉州三安半导体科技有限公司 Led封装器件及其制备方法
JP2025152239A (ja) 2024-03-28 2025-10-09 日亜化学工業株式会社 発光装置、および面状光源

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2632462A1 (de) * 1976-07-19 1978-01-26 Siemens Ag Leuchtdiode
CN1937268A (zh) * 2005-09-22 2007-03-28 三星电机株式会社 发光二极管封装及其制造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3789747B2 (ja) * 2000-11-15 2006-06-28 三洋電機株式会社 発光装置の製造方法
JP4100155B2 (ja) 2002-12-05 2008-06-11 オムロン株式会社 発光光源、発光光源アレイ及び当該発光光源を用いた機器
JP2005277139A (ja) 2004-03-25 2005-10-06 Matsushita Electric Ind Co Ltd 半導体発光装置
JP2006012918A (ja) * 2004-06-22 2006-01-12 Harison Toshiba Lighting Corp 発光装置
TWI277223B (en) * 2004-11-03 2007-03-21 Chen-Lun Hsingchen A low thermal resistance LED package
JP2007042749A (ja) * 2005-08-01 2007-02-15 Matsushita Electric Ind Co Ltd 発光装置とこれを用いた表示装置及び照明装置、並びに発光装置の製造方法
JP4965858B2 (ja) * 2005-12-26 2012-07-04 株式会社東芝 レンズ付発光ダイオード装置
KR100819883B1 (ko) 2006-02-17 2008-04-07 삼성전자주식회사 발광소자 패키지 및 그 제조방법
KR100820529B1 (ko) * 2006-05-11 2008-04-08 엘지이노텍 주식회사 발광 장치 및 그 제조방법, 면 발광 장치
EP2843716A3 (en) * 2006-11-15 2015-04-29 The Regents of The University of California Textured phosphor conversion layer light emitting diode
DE102009018088A1 (de) * 2008-04-30 2009-12-24 Ledon Lighting Jennersdorf Gmbh Modul zur Homogenisierung von Licht, das von einer Festkörper-Lichtquelle (z.B. einer LED) emittiert wird
JP2010171379A (ja) * 2008-12-25 2010-08-05 Seiko Instruments Inc 発光デバイス
JP2010182809A (ja) * 2009-02-04 2010-08-19 Stanley Electric Co Ltd 半導体発光装置
JP2011009143A (ja) 2009-06-29 2011-01-13 Sony Corp 照明装置およびバックライト
EP2450613B1 (en) * 2010-11-08 2015-01-28 LG Innotek Co., Ltd. Lighting device
KR20120084526A (ko) 2011-01-20 2012-07-30 삼성엘이디 주식회사 발광소자 패키지
JP5814947B2 (ja) * 2011-01-20 2015-11-17 シャープ株式会社 発光装置、照明装置、表示装置及び発光装置の製造方法
US8513693B2 (en) 2011-08-08 2013-08-20 Intellectual Discovery Co., Ltd. Miniature leadless surface mount lamp with dome and reflector cup

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2632462A1 (de) * 1976-07-19 1978-01-26 Siemens Ag Leuchtdiode
CN1937268A (zh) * 2005-09-22 2007-03-28 三星电机株式会社 发光二极管封装及其制造方法

Also Published As

Publication number Publication date
KR20150027480A (ko) 2015-03-12
JP2015050468A (ja) 2015-03-16
US20150060897A1 (en) 2015-03-05
US9929329B2 (en) 2018-03-27
EP2846368A1 (en) 2015-03-11
JP6442199B2 (ja) 2018-12-19
CN104425690A (zh) 2015-03-18
EP2846368B1 (en) 2019-04-24
KR102076243B1 (ko) 2020-02-12

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GR01 Patent grant
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TR01 Transfer of patent right

Effective date of registration: 20210813

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China