CN104409612B - The inorganic encapsulated method of the white light LED part based on quantum dot - Google Patents
The inorganic encapsulated method of the white light LED part based on quantum dot Download PDFInfo
- Publication number
- CN104409612B CN104409612B CN201410604606.6A CN201410604606A CN104409612B CN 104409612 B CN104409612 B CN 104409612B CN 201410604606 A CN201410604606 A CN 201410604606A CN 104409612 B CN104409612 B CN 104409612B
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- Prior art keywords
- quantum dot
- white light
- light led
- led part
- inorganic
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
A kind of inorganic encapsulated method of the white light LED part based on quantum dot of the present invention, it is characterised in that：Comprise the following steps：Prepare inorganic silicon dioxide colloidal sol：Ammoniacal liquor is added to TEOS, H2In O and glycerine mixed solution, the pH of solution is controlled 9.5-10；After a small amount of PVA aqueous solution stirring 1.5h is added after being sufficiently stirred for, granulated silica silicon particle colloidal sol is filtered to obtain by slow filter paper, curing obtains the larger silicon dioxide gel of concentration one week at a temperature of 40 DEG C；Inorganic encapsulated：Including the solidification of die bond, bonding wire, dispensing, lid lens and injecting glue.The inorganic encapsulated method of the white light LED part based on quantum dot of the invention, can facilitate, effectively improve conventional epoxies and silica gel packaging method, be conducive to improving the light transmittance of white light LED part；Manufacture craft of the invention is simple, efficiency high, low cost；So that the white light LED part application based on quantum dot is more extensive.
Description
Technical field
Inorganic encapsulated method the present invention relates to be based on the white light LED part of quantum dot；The method is conducive to improving white light
The light transmittance of LED component, manufacture craft is simple, efficiency high, low cost；So that the white light LED part application based on quantum dot is more
Extensively.
Background technology
White light LEDs as a kind of novel solid cold light source, with low threshold voltage, high brightness, the long-life, compact conformation,
Small volume, it is lightweight, respond it is fast and radiationless the advantages of, be referred to as forth generation lighting source.Before LED manufacturing process is generally divided into
Procedure（Chip manufacturing）And later process（Encapsulation）.Wherein, LED encapsulation can directly influence performance and the life-span of LED.
In order to be able to realize that LED has the advantage of long-life and specular removal, must be drawn from LED chip more this link is encapsulated
Light, and working junction temperature is controlled by good heat dissipation design.
The conventional encapsulating material of current white light LED part encapsulation is epoxy resin and silica gel.Although epoxy resin has good
The advantages of dielectricity, cohesiveness for getting well, but the raising required with encapsulation, epoxy resin gradually shows bad as encapsulating material
Gesture, after such as solidifying internal stress it is big, intolerant to mechanical shock, poor heat resistance.Equally, silica gel is used as encapsulating material, with splendid
The advantages of absorbing, resiliency and good heat resistance, uvioresistant photosensitiveness, but silica gel performance is influenced by environmental temperature, with
Temperature rising, the thermal stress inside silica gel is increased, and causing the refractive index of silica gel reduces, so as to influence LED light to imitate and light intensity point
Cloth.Solidification ~ 2h under the conditions of 150 DEG C is needed during using silica gel packaging, quantum dot is fragile, quantum yield declines a lot.Use
Organic silica gel light transmittance is not very high, it is impossible to light is effectively emitted, and this will receive application of the quantum dot in white light LEDs
Limit.
Under comparing, inorganic silicon dioxide colloidal sol makes simple, and convenient storage, translucency is good.Encapsulation process is simple, with
Water-soluble quantum dot is mixed, and condition of cure is not harsh, and the light efficiency of quantum dot is protected, and this will make quantum dot in white light LEDs
In application it is wider.
The content of the invention
Goal of the invention：In order to overcome the deficiencies in the prior art, when present invention offer one kind can shorten encapsulation
Between, reduce packaging cost, improve white light LED part light transmittance inorganic encapsulated method.
Technical scheme：In order to solve the above technical problems, the white light LED part based on quantum dot of present invention offer is inorganic
Method for packing, after prepared by the inorganic silicon dioxide colloidal sol, mixes to obtain white light LED part with aqueous quantum dot.
Comprise the following steps：
（1）Prepare inorganic silicon dioxide colloidal sol：
（11）By TEOS, H2O and glycerine are added in reaction vessel, are sufficiently mixed；
（12）Add ammoniacal liquor, rate-determining steps（11）The pH of middle solution is 9.5-10；
（13）After adding a small amount of PVA aqueous solution stirring 1.5h, by slow filter paper filter granulated silica silicon particle is molten
Glue, curing obtains the larger silicon dioxide gel of concentration one week at a temperature of 40 DEG C；
（2）Inorganic encapsulated：
（21）Die bond：The place point silver paste of die bond is wanted on support, then chip placement, 2h is toasted at 150 DEG C；
（22）Bonding wire：Chip electrode is connected with support with spun gold；
（23）Dispensing：By aqueous quantum dot and step（1）The inorganic silicon dioxide colloidal sol of preparation is 1 in mass ratio:5 is abundant
Mixing, vacuum degassing 30min, dispensing toasts 30min to white light at 60 DEG C；
（24）Lid lens；
（25）Encapsulating solidifies：By step（1）The inorganic silicon dioxide colloidal sol of preparation loads syringe, and syringe needle is propped up in mould
Surface bottom portion injects glue, 1h encapsulation is toasted at 40 DEG C and is completed.
Wherein described TEOS, H2O and NH3Mol ratio be：5:150.4:0.178.
Wherein described aqueous quantum dot is directly prepared or by oil phase quantum dot by experiment by turning water or in its table
Face coated silica is obtained.
Method for packing of the present invention includes the preparation process of silicon dioxide gel and the encapsulation step of LED, wherein silica
After colloidal sol is obtained using TEOS hydrolysis, and the silicon dioxide gel that will be prepared in the encapsulation of LED mixes with aqueous quantum dot
Form the packing colloid containing quantum dot.Compared with prior art, have the following advantages that：
A small amount of glycerine and PVA are added when the 1, preparing inorganic silicon dioxide colloidal sol to be used to prevent film peeling from improving film
Quality.In the case where its viscosity is ensured, addition organic matter as few as possible, to obtain inorganic encapsulating material, improves out
Light rate and stability.
2nd, pH value is 9.5 ~ 10, can be catalyzed TEOS hydrolysis and prevent from being formed larger particles, and with aqueous quantum dot solution
PH value is identical, and the property of quantum dot is not influenceed.
3rd, polymerisation 24-36h, so that TEOS reactions are complete.
4th, curing makes the increase of colloidal sol stickiness one week, to be encapsulated better use in LED.
5th, process of the present invention is first to prepare silicon dioxide gel, then is mixed with aqueous quantum dot, rather than directly will be aqueous
Quantum dot is added to TEOS reclaimed water solutions and obtains, and it, in order to ensure that quantum dot is uniformly dispersed, is not in that multiple quantum dot bags exist so to be
Agglomeration in silica dioxide granule.
6th, encapsulating material is inorganic material so that application of the aqueous phase quantum point in white light LEDs is unrestricted, expands quantum
The use scope of point.
7th, inorganic silicon dioxide colloidal sol can well mix with aqueous quantum dot, and uniformity ensures that luminescent quality is good.
8th, encapsulation condition is simple, and baking temperature is low, will not destroy the performance of quantum dot, its luminous efficiency is guaranteed,
The light efficiency of LED can be improved.
The present invention in terms of existing technologies, the inorganic encapsulated side of the white light LED part based on quantum dot of the invention
Method, can be very good to prepare the white light LED part of full-inorganic, be effectively improved its light transmittance, be conducive to improving the steady of device
It is qualitative, extend the life-span of nanocrystalline photovoltaic device；Manufacture craft of the invention is simple, efficiency high, low cost；So that being based on
The white light LED part application of quantum dot is more extensive.
Specific embodiment
It is specifically inorganic encapsulated method of the embodiment to white light LED part of the present invention based on quantum dot with reference to one
Elaborate.
The inorganic encapsulated method of white light LED part of the present invention based on quantum dot includes two big steps：
First, the preparation of inorganic silicon dioxide colloidal sol, specific method is：
Take 10.4g TEOS（0.05mol）, it is added to 27g deionized waters（1.5mol）With the mixed solution of 2g glycerine
In, add ammoniacal liquor and control medium pH 9.5-10, by being sufficiently stirred for, hydrolyze TEOS ,-the 36h of polymerisation about 24 is completed.
Solution from it is heterogeneous be changed into the silica particle colloidal sol of homogeneous transparent after, add 2mL 5wt% the PVA aqueous solution stirring
After 1.5h, being filtered by slow filter paper can obtain granulated silica silicon particle colloidal sol, then stir evaporation 1 at a temperature of 40 DEG C again
In week, obtain the larger silicon dioxide gel of concentration.
2nd, the inorganic encapsulated of white light LEDs, specific method is：
（1）Die bond：The place point silver paste of die bond is wanted on support, then chip placement, 2h is toasted at 150 DEG C.
（2）Bonding wire：Chip electrode is connected with support with spun gold.
（3）Dispensing：The inorganic silicon dioxide colloidal sol that will be prepared in aqueous phase quantum point and embodiment one is 1 in mass ratio:5 fill
Mixing, vacuum degassing 30min, dispensing is divided to toast 30min at 60 DEG C to white light.
（4）Lid lens.
（5）Encapsulating solidifies：By step（1）The inorganic silicon dioxide colloidal sol of preparation loads syringe, and syringe needle is propped up in mould
Surface bottom portion injects glue, 1h encapsulation is toasted at 40 DEG C and is completed.
The above quantum dot be water phase, if oil phase quantum dot can by turn water or Surface coating silica come
Implement.It should be understood that：For those skilled in the art, under the premise without departing from the principles of the invention, also
Some improvement can be made, these improvement also should be regarded as protection scope of the present invention.
Claims (3)
1. a kind of inorganic encapsulated method of the white light LED part based on quantum dot, it is characterised in that：Comprise the following steps：
（1）Prepare inorganic silicon dioxide colloidal sol：
（11）10.4g TEOS, 27g deionized water and 2g glycerine are added in reaction vessel, are sufficiently mixed；
（12）Add ammoniacal liquor, rate-determining steps（11）The pH of middle solution is 9.5-10；
（13）After adding a small amount of PVA aqueous solution stirring 1.5h, granulated silica silicon particle colloidal sol, 40 are filtered to obtain by slow filter paper
Curing obtains the larger silicon dioxide gel of concentration one week at a temperature of DEG C；
（2）Inorganic encapsulated：
（21）Die bond：The place point silver paste of die bond is wanted on support, then chip placement, 2h is toasted at 150 DEG C；
（22）Bonding wire：Chip electrode is connected with support with spun gold；
（23）Dispensing：By aqueous quantum dot and step（1）The inorganic silicon dioxide colloidal sol of preparation is 1 in mass ratio:5 is fully mixed
Close, vacuum degassing 30min, dispensing toasts 30min to white light at 60 DEG C；
（24）Lid lens；
（25）Encapsulating solidifies：By step（1）The inorganic silicon dioxide colloidal sol of preparation loads syringe, and syringe needle is propped up into mould inner surface
Glue is injected in bottom, 1h encapsulation is toasted at 40 DEG C and is completed.
2. the inorganic encapsulated method of the white light LED part based on quantum dot according to claim 1, it is characterised in that：
TEOS、H2O and NH3Mol ratio be：5:150.4:0.178.
3. the inorganic encapsulated method of the white light LED part based on quantum dot according to claim 1, it is characterised in that：Institute
The aqueous quantum dot stated by experiment directly prepare, by oil phase quantum dot by turning water or being obtained in its Surface coating silica
.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410604606.6A CN104409612B (en) | 2014-11-03 | 2014-11-03 | The inorganic encapsulated method of the white light LED part based on quantum dot |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410604606.6A CN104409612B (en) | 2014-11-03 | 2014-11-03 | The inorganic encapsulated method of the white light LED part based on quantum dot |
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| Publication Number | Publication Date |
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| CN104409612A CN104409612A (en) | 2015-03-11 |
| CN104409612B true CN104409612B (en) | 2017-06-16 |
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| CN104726030B (en) * | 2015-04-03 | 2016-11-23 | 叶峰 | A kind of high-temperature insulation lamp weldering mud and its preparation method and application |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102983250A (en) * | 2012-12-20 | 2013-03-20 | 杭州纳晶科技有限公司 | Silica gel lens, fabrication method of silica gel lens and LED light emitting device comprising silica gel lens |
| CN103354267A (en) * | 2013-07-11 | 2013-10-16 | 安徽科发信息科技有限公司 | Packaging method for white LED (Light-Emitting Diode) light source |
| WO2013153003A1 (en) * | 2012-04-12 | 2013-10-17 | Osram Opto Semiconductors Gmbh | Radiation-emitting component, transparent material and filler particles, and method for producing same |
| CN103378270A (en) * | 2012-04-25 | 2013-10-30 | 比亚迪股份有限公司 | Manufacturing method of LED assembly and LED assembly |
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2014
- 2014-11-03 CN CN201410604606.6A patent/CN104409612B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013153003A1 (en) * | 2012-04-12 | 2013-10-17 | Osram Opto Semiconductors Gmbh | Radiation-emitting component, transparent material and filler particles, and method for producing same |
| CN103378270A (en) * | 2012-04-25 | 2013-10-30 | 比亚迪股份有限公司 | Manufacturing method of LED assembly and LED assembly |
| CN102983250A (en) * | 2012-12-20 | 2013-03-20 | 杭州纳晶科技有限公司 | Silica gel lens, fabrication method of silica gel lens and LED light emitting device comprising silica gel lens |
| CN103354267A (en) * | 2013-07-11 | 2013-10-16 | 安徽科发信息科技有限公司 | Packaging method for white LED (Light-Emitting Diode) light source |
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Granted publication date: 20170616 Termination date: 20201103 |