CN106972092A - A kind of quantum spot white light LED of high-luminous-efficiency and preparation method thereof - Google Patents
A kind of quantum spot white light LED of high-luminous-efficiency and preparation method thereof Download PDFInfo
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- CN106972092A CN106972092A CN201710338296.1A CN201710338296A CN106972092A CN 106972092 A CN106972092 A CN 106972092A CN 201710338296 A CN201710338296 A CN 201710338296A CN 106972092 A CN106972092 A CN 106972092A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The invention belongs to quantum dot LED encapsulation fields, specifically related to a kind of quantum spot white light LED of high-luminous-efficiency, wherein, LED chip is fixedly installed on substrate surface, quantum dot silicon nanosphere is attached to LED chip surface, phosphor gel is fully wrapped around firmly by quantum dot silicon nanosphere and LED chip, institute's light-permeable shell is directly installed on substrate or is fixed on surface by a moulding compound, and in being sealed in phosphor gel, LED chip and quantum dot silicon nanosphere, the gap in light-permeable shell is filled with packaging plastic.The invention also discloses a kind of preparation method of the quantum spot white light LED of high-luminous-efficiency.The quantum dot LED of the present invention can significantly improve the luminous efficiency of white light LEDs, quantum dot and the respective luminescent spectrum of fluorescent material can be quickly and conveniently controlled in production, so as to which the ideal type needed for obtaining lights, and the consumption of quantum dot can be substantially reduced, save production cost.
Description
Technical field
The invention belongs to quantum dot LED encapsulation fields, more particularly, to a kind of quantum spot white light of high-luminous-efficiency
LED and preparation method thereof.
Background technology
Semiconductor lighting be it is a kind of based on efficient white light light emitting diode (White Light Emitting Diode,
WLED novel illumination technology).Compared to conventional illumination sources, with luminous efficiency is high, power consumption is few, reliability is high and long lifespan
The advantages of, it is acknowledged as one of 21 century high-tech sector most with prospects.Meanwhile, the flat board based on white light LEDs backlight
Display Technique develops rapidly in recent years, it has also become new growth engines.Expecting the related output value of the year two thousand twenty China white light LEDs has
Prestige reaches trillion yuan.
In the market it is most widely used be fluorescent material conversion white light LEDs, it has higher luminous efficiency.But
Due to lacking red color light component in spectrum, the color of fluorescent material conversion white light LEDs is unsaturated, and colour rendering index is very low.Quantum dot conduct
A kind of new nanoscale light conversion material, its emission spectrum can be regulated and controled by changing size and composition, and the face sent
Excitation is high.Therefore, the quantum spot white light LED of blue LED excited yellow fluorescent material and red quantum dot composition can be simultaneously
Obtain high-luminous-efficiency and high color rendering index (CRI).
In the prior art, when carrying out quantum spot white light LED encapsulation, the member such as nitrogen, sulphur, phosphorus for being carried due to quantum dot surface
Element can make the platinum catalyst in fluorescent powder colloid fail, and cause silica gel not solidify, it is therefore necessary to which quantum dot and fluorescent material are entered
Row is effectively isolated.Effective quarantine measures are to adhere to one layer of fine and close silica nanometer layer in quantum dot outer surface at present, are prepared
Go out quantum dot silicon nanosphere.It is blended although preferably can be realized using quantum dot silicon nanosphere with phosphor gel, but altogether
In mixing encapsulating structure, due to quantum dot and the mutual light energy reabsorption of fluorescent material, cause light energy losses serious, and then
Cause quantum spot white light LED luminous efficiency to be lost, also increase accordingly the consumption of quantum dot and phosphor material powder, cause device
Cost increase.
Due to there is drawbacks described above and deficiency, this area is needed badly to make and further improved, and designs a kind of quantum
Point white light LEDs, can overcome drawbacks described above and deficiency.
The content of the invention
For the disadvantages described above or Improvement requirement of prior art, the invention provides a kind of quantum dot of high-luminous-efficiency is white
Light LED and preparation method thereof, quantum dot silicon nanosphere is coated on above LED chip by it, then spot printing phosphor gel separate type
Structure, compared to traditional quantum dot-fluorescent material hybrid combination, can efficiently reduce quantum dot and absorb phosphor emission again
Light, so as to reduce reabsorption loss, significantly improves the luminous efficiency of white light LEDs, due to being carried out respectively to quantum dot and fluorescent material
Encapsulation, can quickly and conveniently control quantum dot and the respective luminescent spectrum of fluorescent material in production, so as to obtain required reason
Think that type lights, and the consumption of quantum dot can be substantially reduced, saved production cost.
To achieve the above object, according to one aspect of the present invention, there is provided a kind of quantum spot white light of high-luminous-efficiency
LED, it is characterised in that it includes substrate, light-permeable shell and the LED chip being arranged on substrate and quantum dot silicon nanosphere,
Wherein, the LED chip is fixedly installed on substrate surface, and the quantum dot silicon nanosphere is attached to the LED core
Piece surface, phosphor gel is fully wrapped around firmly by the quantum dot silicon nanosphere and LED chip, and the light-permeable shell is directly installed on
Surface is fixed on substrate or by a moulding compound, and the phosphor gel, LED chip and quantum dot silicon nanosphere is close
In being enclosed in, the gap in the light-permeable shell is filled with packaging plastic.
Specifically, first quantum dot silicon nanosphere is coated on above LED chip, then spot printing phosphor gel separate type knot
Structure, compared to traditional quantum dot-fluorescent material hybrid combination, can efficiently reduce quantum dot and absorb phosphor emission again
Light, so as to reduce reabsorption loss, the white light LEDs thus prepared have high-luminous-efficiency；And be close to quantum dot silicon nanosphere
LED chip, compared to traditional quantum dot-fluorescent material hybrid combination, when producing the quantum dot emission spectrum of same intensity, can show
The consumption for reducing quantum dot is write, production cost has been saved；And due to being packaged respectively to quantum dot and fluorescent material, in production
Quantum dot and the respective luminescent spectrum of fluorescent material can be quickly and conveniently controlled, so that the ideal type needed for obtaining lights.
It is further preferred that by setting lead frame on the moulding compound, the LED chip passes through gold thread and lead
Framework realizes electrical connection；Or by will set copper post in the middle of the substrate, the LED chip, which is fixed in the copper post, realizes electricity
Connection.By the setting of lead frame and copper post, electrical connection can be realized in various use environments, different use need are met
Ask.
Preferably, the material of the light-permeable shell is polymethyl methacrylate, makrolon or glass, and its light transmittance is big
In 90%；The light-permeable shell is shaped as hemispherical or spherical, a diameter of 1mm~20mm of its inner surface, inner surface
Highly it is 1mm~20mm.More comparative test shows, using polymethyl methacrylate, and makrolon or glass are as saturating
Bare hull body, can have preferable light transmittance, and the light transmittance of transparent shell is more than 90%, then can make final obtained
LED has preferable luminous intensity.By the shapes and sizes specifications control of light-permeable shell within the above range, hyaline test can be excited
The phosphor gel and quantum dot nano ball in internal portion, so that obtain suitable spectrum uses needs to meet.
Preferably, the particle size range of the quantum dot silicon nanosphere is 20nm~50nm, the quantum dot silicon nanosphere
Emission wavelength is 600nm~700nm.More comparative test shows that the size and purity of quantum dot silicon nanosphere can influence
Its emission spectrum, by the particle diameter of quantum dot silicon nanosphere and emission wavelength control within the above range, with high-luminous-efficiency with
High color rendering index (CRI) is to meet use requirement.
Preferably, the quantum dot silicon nanosphere is core-shell structure particles, and the stratum nucleare of the core-shell structure particles is selenizing
One or more in cadmium, cadmium sulfoselenide, indium phosphide, indium sulphur or perovskite, the shell of the core-shell structure particles is without fixed
Type silica.
Preferably, the fluorescent material in the phosphor gel be YAG or TAG, the glue material that the phosphor gel is used be silica gel,
Epoxy resin or liquid glass, the packaging plastic are silica gel, epoxy resin or liquid glass.
Preferably, the LED chip is vertical electrode chip or horizontal electrode chip, and its substrate is sapphire or silicon.
It is another aspect of this invention to provide that there is provided a kind of preparation method of the quantum spot white light LED of high-luminous-efficiency, its
It is characterised by, specifically includes following steps：
S1. LED chip is fixed on substrate and completes circuit connection, then by quantum dot silicon nanosphere aqueous solution spot printing
Above LED chip, heating makes the solvent in the aqueous solution volatilize completely, and quantum dot silicon nanosphere is formed on LED chip surface；
S2. phosphor gel point is coated in above quantum dot silicon nanosphere, and heating solidifies phosphor gel, it is glimmering after solidification
Light arogel by quantum dot silicon nanosphere and LED chip it is fully wrapped around including；
S3. by the opening down placement of light-permeable shell, it is fixedly mounted on substrate or is fixedly mounted on the molding of surface
In material；
S4. packaging plastic is filled in the gap of the light-permeable shell, the quantum is prepared after adhesive curing to be packaged
Point white light LEDs.
Preferably, in step sl, the coating thickness of the quantum dot silicon nanosphere aqueous solution is 20nm~150mm, plus
Hot temperature is 80~120 degree.
Preferably, in step s 2, the spot printing volume of the phosphor gel be 2ul~20ul, heating-up temperature be 100 DEG C~
150℃.More comparative test shows, by the fixing fabric structure of phosphor gel in above range, and the ratio of each component is limited
It in above range, ensure that fluorescent material can be effectively utilized, and can effectively coordinate with quantum dot silicon nanosphere, obtain
To appropriate brightness and the spectrum of color.And the heating and temperature control of the solidification temperature of phosphor gel and quantum dot silicon nanosphere exists
In the range of said temperature, it can effectively solidify or dry, while not interfering with the final performance of the element of each in LED again, it is ensured that
Its quality meets final use requirement.
In general, by the contemplated above technical scheme of the present invention compared with prior art, with advantages below and
Beneficial effect：
1st, quantum dot silicon nanosphere is first coated on above LED chip by quantum spot white light LED of the invention, then spot printing fluorescence
The separate structure of arogel, compared to traditional quantum dot-fluorescent material hybrid combination, can efficiently reduce quantum dot and inhale again
Phosphor emission light is received, so as to reduce reabsorption loss, the luminous efficiency of white light LEDs is significantly improved；And due to right respectively
Quantum dot and fluorescent material are packaged, therefore compared to traditional quantum dot-fluorescent material hybrid combination, in production can be more
Easily control quantum dot and the respective luminescent spectrum of fluorescent material, light so as to obtain required ideal type.
2nd, due to quantum dot silicon nanosphere is close into LED chip, compared to traditional quantum dot-fluorescent material hybrid combination,
When producing the quantum dot emission spectrum of same intensity, the consumption of quantum dot can be substantially reduced, production cost has been saved.
3rd, by the setting of lead frame and copper post, electrical connection can be realized in various use environments, meets different
Use demand.And phosphor gel, quantum dot silicon nanosphere, transparent shell are selected into suitable specification and material, can be effectively
LED luminous efficiency is improved, preferable luminescent spectrum is obtained, and disclosure satisfy that the use demand of varying environment.
4th, quantum dot LED of the invention preparation method is only with four steps, you can with prepare luminous efficiency it is high and
The good quantum dot LED of colour developing degree, and it is simple to operate, with low cost, it is adapted to large-scale production quantum spot white light LED.
Brief description of the drawings
Fig. 1 is the preparation method flow chart of the quantum spot white light LED of high-luminous-efficiency of the present invention；
Fig. 2 is the structural representation of the embodiment of the present invention 1；
Fig. 3 is the structural representation of the embodiment of the present invention 2；
Fig. 4 is the structural representation of the embodiment of the present invention 3；
Fig. 5 is the structural representation of the embodiment of the present invention 4；
Fig. 6 (a) and 6 (b) are the structural representation of the embodiment of the present invention 5；
Fig. 7 (a) and 7 (b) are the structural representation of the embodiment of the present invention 6；
Fig. 8 (a) and 8 (b) are the quantum spot white light LED and conventional hybrid formula white light LEDs prepared using described method
Performance comparison result.
In all of the figs, identical reference is used for representing identical element or structure, wherein：101- substrates,
102- moulding compounds, 103- lead frames, 104- gold threads, 105-LED chips, 106- quantum dot silicon nanosphere, 107- phosphor gels,
108- packaging plastics, 109- light-permeable shells, 110- copper posts, 111- spot gluing equipments, 112- heating plates.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below
Not constituting conflict each other can just be mutually combined.
As shown in Fig. 2 being a kind of quantum spot white light LED of high-luminous-efficiency of the present invention, it includes substrate 101, printing opacity
Housing 109 and LED chip 105 on the substrate 101 and quantum dot silicon nanosphere 106 are set,
Wherein, the LED chip 105 is fixedly installed on the surface of substrate 101, and the quantum dot silicon nanosphere 106 is attached to
The surface of LED chip 105, phosphor gel 107 is fully wrapped around firmly by the quantum dot silicon nanosphere 106 and LED chip 105,
The light-permeable shell 109 is mounted directly on the substrate 101 or is fixed on the top of substrate 101 by a moulding compound 102, and will be described
In phosphor gel 107, LED chip 105 and quantum dot silicon nanosphere 106 are sealed in, the gap in the light-permeable shell 109 is filled out
Filled with packaging plastic 108.
In a preferred embodiment of the invention, it is described by setting lead frame 103 on the moulding compound 102
LED chip 105 is realized by gold thread 104 and lead frame 103 and electrically connected；Or by the way that copper will be set in the middle of the substrate 101
Post 110, the LED chip 105, which is fixed in the copper post 110, realizes electrical connection.
In another preferred embodiment of the invention, the material of the light-permeable shell 109 is polymethyl methacrylate,
Makrolon or glass, its light transmittance are more than 90%；The light-permeable shell 109 is shaped as hemispherical or spherical, its interior table
A diameter of 1mm~20mm in face, the height of inner surface is 1mm~20mm.
In another preferred embodiment of the invention, the particle size range of the quantum dot silicon nanosphere 106 be 20nm~
50nm, the emission wavelength of the quantum dot silicon nanosphere 106 is 600nm~700nm.
In another preferred embodiment of the invention, the quantum dot silicon nanosphere 106 is core-shell structure particles, described
The stratum nucleare of core-shell structure particles is the one or more in cadmium selenide, cadmium sulfoselenide, indium phosphide, indium sulphur or perovskite, described
The shell of core-shell structure particles is unformed silica.
In another preferred embodiment of the invention, the fluorescent material in the phosphor gel 107 is YAG or TAG, described
The glue material that phosphor gel 107 is used be silica gel, epoxy resin or liquid glass, the packaging plastic 108 be silica gel, epoxy resin or
Liquid glass.
In another preferred embodiment of the invention, the LED chip 105 is vertical electrode chip or horizontal electrode core
Piece, its substrate is sapphire or silicon.
As shown in figure 1, present invention also offers a kind of preparation method of the quantum spot white light LED of high-luminous-efficiency, specifically
Comprise the following steps：
S1. LED chip 105 is fixed on the substrate 101 and completes circuit connection, it is then that quantum dot silicon nanosphere is water-soluble
Liquid point is coated in the top of LED chip 105, and heating makes the solvent in the aqueous solution volatilize completely, and quantum is formed on the surface of LED chip 105
Point silicon nanosphere 106；
S2. 107 points of phosphor gel is coated in above quantum dot silicon nanosphere, and heating solidifies phosphor gel 107, solidifies
Phosphor gel 107 afterwards by quantum dot silicon nanosphere and LED chip 105 it is fully wrapped around including；
S3. by the opening down placement of light-permeable shell 109, it is fixedly mounted on the substrate 101 or is fixedly mounted on the substrate 101
In the moulding compound 102 of side；
S4. packaging plastic 108 is filled in the gap of the light-permeable shell 109, glue 108 to be packaged is prepared after solidifying
The quantum spot white light LED.
In another preferred embodiment of the invention, in step sl, the painting of the quantum dot silicon nanosphere aqueous solution
Thickness is covered for 20nm~150mm, and heating-up temperature is 80~120 degree.
In another preferred embodiment of the invention, in step s 2, the spot printing volume of the phosphor gel (107) is
2ul~20ul, heating-up temperature is 100 DEG C~150 DEG C.
Preferably to explain the present invention, several specific embodiments given below：
Embodiment 1
Referring to Fig. 1 and Fig. 2, the present embodiment uses gallium nitride horizontal electrode LED chip, and substrate is sapphire.Quantum dot is micro-
The particle diameter of ball is 30nm, and emission wavelength is 630nm, during quantum dot core layer material is cadmium selenide, the quantum dot silicon nanosphere aqueous solution
The mass concentration of quantum dot silicon nanosphere is 5mg/ml.
S1. LED chip 105 is fixed on the substrate 101 and completes circuit connection, it is then that quantum dot silicon nanosphere is water-soluble
Liquid point is coated in the top of LED chip 105, and coating height is 30nm, and module is put into 100 degrees Centigrade 10 minutes on hot plate,
The solvent in the aqueous solution is volatilized completely, quantum dot silicon nanosphere 106 is formed on the surface of LED chip 105；
S2. phosphor gel is coated in above quantum dot silicon nanosphere for 107 points using spot gluing equipment 111, it is glimmering in phosphor gel
Light powder uses YAG, and colloid uses silica gel, and mass fraction of the fluorescent material in colloid is 10%, and spot printing volume is 15ul, is then adopted
With heating plate 112 in 150 degrees Centigrade 1 hour, solidify phosphor gel 107, the phosphor gel 107 after solidification is by quantum dot
Including silicon nanosphere and LED chip 105 are fully wrapped around；
S3. by the opening down placement of light-permeable shell 109, it is fixedly mounted on the substrate 101 or is fixedly mounted on the substrate 101
In the moulding compound 102 of side；Light-permeable shell material is makrolon, and its light transmittance is 95%；Light-permeable shell is shaped as hemispherical,
A diameter of 3mm of its inner surface, the height of inner surface is 1.5mm；
S4. packaging plastic 108 is filled in the gap of the lead frame 103 and light-permeable shell 109, glue 108 to be packaged is consolidated
The quantum spot white light LED is prepared after change.
Embodiment 2
Referring to Fig. 3, the present embodiment uses gallium nitride horizontal electrode LED chip, and substrate is sapphire.The grain of quantum dot microsphere
Footpath is 40nm, and emission wavelength is 630nm, and quantum dot core layer material is quantum dot in cadmium selenide, the quantum dot silicon nanosphere aqueous solution
The mass concentration of silicon nanosphere is 5mg/ml.
S1. LED chip 105 is fixed on the substrate 101 and completes circuit connection, it is then that quantum dot silicon nanosphere is water-soluble
Liquid point is coated in the top of LED chip 105, and coating height is 60nm, and module is put into 100 degrees Centigrade 10 minutes on hot plate,
The solvent in the aqueous solution is volatilized completely, quantum dot silicon nanosphere 106 is formed on the surface of LED chip 105；
S2. phosphor gel is coated in above quantum dot silicon nanosphere for 107 points using spot gluing equipment 111, it is glimmering in phosphor gel
Light powder uses YAG, and colloid uses silica gel, and mass fraction of the fluorescent material in colloid is 20%, and spot printing volume is 10ul, is then adopted
With heating plate 112 in 150 degrees Centigrade 1 hour, solidify phosphor gel 107, the phosphor gel 107 after solidification is by quantum dot
Including silicon nanosphere and LED chip 105 are fully wrapped around；
S3. by the opening down placement of light-permeable shell 109, it is fixedly mounted on the substrate 101 or is fixedly mounted on the substrate 101
In the moulding compound 102 of side；Light-permeable shell material is makrolon, and its light transmittance is 90%；Light-permeable shell is shaped as hemispherical,
A diameter of 6mm of its inner surface, the height of inner surface is 3mm；
S4. packaging plastic 108 is filled in the gap of the lead frame 103 and light-permeable shell 109, glue 108 to be packaged is consolidated
The quantum spot white light LED is prepared after change.
Embodiment 3
Referring to Fig. 4, the present embodiment uses gallium nitride horizontal electrode LED chip, and substrate is sapphire.The grain of quantum dot microsphere
Footpath is 20nm, and emission wavelength is 700nm, and quantum dot core layer material is quantum in cadmium sulfoselenide, the quantum dot silicon nanosphere aqueous solution
The mass concentration of point silicon nanosphere is 6mg/ml.
S1. LED chip 105 is fixed on the substrate 101 and completes circuit connection, it is then that quantum dot silicon nanosphere is water-soluble
Liquid point is coated in the top of LED chip 105, and coating height is 150nm, and module is put into 80 degrees Centigrade 10 minutes on hot plate,
The solvent in the aqueous solution is volatilized completely, quantum dot silicon nanosphere 106 is formed on the surface of LED chip 105；
S2. phosphor gel is coated in above quantum dot silicon nanosphere for 107 points using spot gluing equipment 111, in phosphor gel
Fluorescent material is TAG types, and colloid is silica gel, and fluorescent material mass fraction is 1%；Spot printing volume is 20ul, then uses heating plate 112
In 135 degrees Centigrade 1 hour, solidify phosphor gel 107, the phosphor gel 107 after solidification by quantum dot silicon nanosphere and
Including LED chip 105 is fully wrapped around；
S3. by the opening down placement of light-permeable shell 109, it is fixedly mounted on the substrate 101 or is fixedly mounted on the substrate 101
In the moulding compound 102 of side；Light-permeable shell material is makrolon, and its light transmittance is 95%, and being shaped as light-permeable shell is spherical,
A diameter of 20mm of its inner surface, the height of inner surface is 20mm；
S4. packaging plastic 108 is filled in the gap of the lead frame 103 and light-permeable shell 109, packaging plastic is asphalt mixtures modified by epoxy resin
Fat, glue 108 to be packaged prepares the quantum spot white light LED after solidifying.
Embodiment 4
Referring to Fig. 5, the present embodiment uses gallium nitride horizontal electrode LED chip, and substrate is silicon, and substrate is silicon substrate, substrate
Upper surface be not plane, with reflecting cup structure.The particle diameter of quantum dot microsphere is 50nm, and emission wavelength is 600nm, quantum dot
Core layer material is that the mass concentration of quantum dot silicon nanosphere in indium sulphur, the quantum dot silicon nanosphere aqueous solution is 6mg/ml.
S1. LED chip 105 is fixed on the substrate 101 and completes circuit connection, it is then that quantum dot silicon nanosphere is water-soluble
Liquid point is coated in the top of LED chip 105, and coating height is 80nm, and module is put into 120 degrees Centigrade 10 minutes on hot plate,
The solvent in the aqueous solution is volatilized completely, quantum dot silicon nanosphere 106 is formed on the surface of LED chip 105；
S2. phosphor gel is coated in above quantum dot silicon nanosphere for 107 points using spot gluing equipment 111, in phosphor gel
Fluorescent material is YAG types, and colloid is silica gel, and fluorescent material mass fraction is 99%；Spot printing volume is 20ul, then using heating plate
112, in 130 degrees Centigrade 1 hour, solidify phosphor gel 107, and the phosphor gel 107 after solidification is by quantum dot silicon nanosphere
With LED chip 105 it is fully wrapped around including；
S3. by the opening down placement of light-permeable shell 109, it is fixedly mounted on the substrate 101 or is fixedly mounted on the substrate 101
In the moulding compound 102 of side；Light-permeable shell material is glass, and its light transmittance is 92%, and light-permeable shell is shaped as hemispherical, its portion
A diameter of 10mm, the height of inner surface is 10mm.
S4. packaging plastic 108 is filled in the gap of the lead frame 103 and light-permeable shell 109, packaging plastic is liquid glass
Glass, glue 108 to be packaged prepares the quantum spot white light LED after solidifying.
Embodiment 5
Referring to Fig. 6 (a) and 6 (b), LED silicon based packages are referred in the present embodiment.Single or array LED chip are fixed
On a silicon substrate, complete after being electrically interconnected, quantum dot silicon nanosphere aqueous solution point is coated in above LED chip, treats that solution is waved completely
Fluorescent powder colloid point is coated in above quantum dot silicon nanosphere again after hair, being subsequently heated solidifies phosphor gel；In the substrate
Packaging plastic is filled with the gap of the light-permeable shell, the white light LEDs are prepared after solidification.
The present embodiment uses gallium nitride horizontal electrode LED chip, and substrate is sapphire.The particle diameter of quantum dot microsphere is
20nm, emission wavelength is 660nm, and quantum dot core layer material is that quantum dot silicon is received in cadmium selenide, the quantum dot silicon nanosphere aqueous solution
The mass concentration of rice ball is 6.5mg/ml.
S1. LED chip 105 is fixed on the substrate 101 and completes circuit connection, it is then that quantum dot silicon nanosphere is water-soluble
Liquid point is coated in the top of LED chip 105, and coating height is 20nm, and module is put into 100 degrees Centigrade 10 minutes on hot plate,
The solvent in the aqueous solution is volatilized completely, quantum dot silicon nanosphere 106 is formed on the surface of LED chip 105；
S2. phosphor gel is coated in above quantum dot silicon nanosphere for 107 points using spot gluing equipment 111, in phosphor gel
Fluorescent material is YAG types, and colloid is epoxy resin, and fluorescent material mass fraction is 30%；Spot printing volume is 2ul, then using heating
Plate 112 solidified phosphor gel 107 in 100 degrees Centigrade 1 hour, and the phosphor gel 107 after solidification is by quantum dot silicon nanometer
Including ball and LED chip 105 are fully wrapped around；
S3. by the opening down placement of light-permeable shell 109, it is fixedly mounted on the substrate 101 or is fixedly mounted on the substrate 101
In the moulding compound 102 of side；Light-permeable shell material is polymethyl methacrylate, and its light transmittance is 92%, the shape of light-permeable shell
For hemispherical, its inside diameter is 1mm, and the height of inner surface is 1mm；
S4. packaging plastic 108 is filled in the gap of the lead frame 103 and light-permeable shell 109, packaging plastic is asphalt mixtures modified by epoxy resin
Fat, glue 108 to be packaged prepares the quantum spot white light LED after solidifying.
Embodiment 6
Referring to Fig. 7 (a) and 7 (b), LED PCB (PCB) encapsulation is referred in the present embodiment.Printed circuit board (PCB)
It is upper that there is the copper post or other metal structures that high thermal conductivity coefficient is filled with through-hole structure, through hole.Single or array LED chip are solid
In the fixed copper post filled in the printed circuit boards, the size of copper post is consistent with the size of LED chip.Complete after being electrically interconnected, will measure
Son point silicon nanosphere aqueous solution point is coated in above LED chip, and fluorescent powder colloid point is coated in into quantum again after solution volatilizees completely
Above point silicon nanosphere, being subsequently heated solidifies phosphor gel；Fill and seal in the gap of the substrate and the light-permeable shell
Glue is filled, the white light LEDs are prepared after solidification.The other specification of the quantum spot white light LED and the phase in embodiment 5
Together.
Fig. 8 (a) and 8 (b) are a stent-type quantum spot white light LEDs prepared by described method, and a are passed
The quantum dot of system-fluorescent material blending formula quantum spot white light LED, both the performance test results.It is described that both can be seen that for contrast
The quantum spot white light LED for preparing of method under equal colour temperature and spatial distribution, higher luminous efficiency can be obtained.For example,
Under the driving of 20mA electric currents, light of the quantum spot white light LED than traditional blending formula quantum spot white light LED prepared by described method
Effect improves 15.7%.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, it is not used to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the invention etc., it all should include
Within protection scope of the present invention.
Claims (10)
1. a kind of quantum spot white light LED of high-luminous-efficiency, it is characterised in that it include substrate (101), light-permeable shell (109),
And it is arranged on LED chip (105) and quantum dot silicon nanosphere (106) on substrate (101),
Wherein, the LED chip (105) is fixedly installed on substrate (101) surface, quantum dot silicon nanosphere (106) attachment
On the LED chip (105) surface, phosphor gel (107) is complete by the quantum dot silicon nanosphere (106) and LED chip (105)
Wrap entirely, the light-permeable shell (109) is directly installed on substrate (101) or is fixed on substrate by a moulding compound (102)
(101) top, and the phosphor gel (107), LED chip (105) and quantum dot silicon nanosphere (106) are sealed in interior, institute
The gap stated in light-permeable shell (109) is filled with packaging plastic (108).
2. quantum spot white light LED as claimed in claim 1, it is characterised in that drawn by being set on the moulding compound (102)
Wire frame (103), the LED chip (105) is realized by gold thread (104) and lead frame (103) and electrically connected；Or by inciting somebody to action
Copper post (110) is set in the middle of the substrate (101), and the LED chip (105), which is fixed in the copper post (110), realizes electrical connection.
3. quantum spot white light LED as claimed in claim 1 or 2, it is characterised in that the material of the light-permeable shell (109) is
Polymethyl methacrylate, makrolon or glass, its light transmittance are more than 90%；The light-permeable shell (109) is shaped as half
It is spherical or spherical, a diameter of 1mm~20mm of its inner surface, the height of inner surface is 1mm~20mm.
4. quantum spot white light LED as claimed in claim 3, it is characterised in that the particle diameter of the quantum dot silicon nanosphere (106)
Scope is 20nm~50nm, and the emission wavelength of the quantum dot silicon nanosphere (106) is 600nm~700nm.
5. quantum spot white light LED as claimed in claim 4, it is characterised in that the quantum dot silicon nanosphere (106) is nucleocapsid
Structure particles, the stratum nucleare of the core-shell structure particles is one in cadmium selenide, cadmium sulfoselenide, indium phosphide, indium sulphur or perovskite
Plant or a variety of, the shell of the core-shell structure particles is unformed silica.
6. quantum spot white light LED as claimed in claim 5, it is characterised in that the fluorescent material in the phosphor gel (107) is
YAG or TAG, the glue material that the phosphor gel (107) uses is silica gel, epoxy resin or liquid glass, the packaging plastic (108)
For silica gel, epoxy resin or liquid glass.
7. quantum spot white light LED as claimed in claim 6, it is characterised in that the LED chip (105) is vertical electrode core
Piece or horizontal electrode chip, its substrate are sapphire or silicon.
8. a kind of preparation method of the quantum spot white light LED of high-luminous-efficiency, it is characterised in that specifically include following steps：
S1. LED chip (105) is fixed on substrate (101) and completes circuit connection, it is then that quantum dot silicon nanosphere is water-soluble
Liquid point is coated in above LED chip (105), and heating makes the solvent in the aqueous solution volatilize completely, is formed on LED chip (105) surface
Quantum dot silicon nanosphere (106)；
S2. phosphor gel (107) point is coated in above quantum dot silicon nanosphere (106), and heating makes phosphor gel (107) solid
Change, phosphor gel (107) after solidification by quantum dot silicon nanosphere (106) and LED chip (105) it is fully wrapped around including；
S3. by the opening down placement of light-permeable shell (109), it is fixedly mounted on substrate (101) or is fixedly mounted on substrate (101)
In the moulding compound (102) of top；
S4. in the gap filling packaging plastic (108) of the light-permeable shell (109), it is prepared into after glue (108) solidification to be packaged
To the quantum spot white light LED.
9. preparation method as claimed in claim 8, it is characterised in that in step sl, the quantum dot silicon nanosphere is water-soluble
The coating thickness of liquid is 20nm~150mm, and heating-up temperature is 80~120 degree.
10. preparation method as claimed in claim 8 or 9, it is characterised in that in step s 2, the phosphor gel (107)
Spot printing volume is 2ul~20ul, and heating-up temperature is 100 DEG C~150 DEG C.
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