CN107123725B - Quantum dot film, quantum spot white light LED and its packaging method - Google Patents
Quantum dot film, quantum spot white light LED and its packaging method Download PDFInfo
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- CN107123725B CN107123725B CN201710303505.9A CN201710303505A CN107123725B CN 107123725 B CN107123725 B CN 107123725B CN 201710303505 A CN201710303505 A CN 201710303505A CN 107123725 B CN107123725 B CN 107123725B
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 164
- 238000000034 method Methods 0.000 title claims abstract description 30
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- 239000005297 pyrex Substances 0.000 claims abstract description 54
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims abstract description 53
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
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- 229910002027 silica gel Inorganic materials 0.000 claims description 19
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- 239000013335 mesoporous material Substances 0.000 claims description 17
- 239000008367 deionised water Substances 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 14
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- 239000002071 nanotube Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
A kind of quantum dot film, quantum spot white light LED and its packaging method, it is related to white light LEDs to show and lighting area, the quantum dot film includes concave Pyrex matrix, the top opening edge of Pyrex matrix is covered with ultra-violet curing glue-line, quantum dot gel layer is provided in the groove of Pyrex matrix, glass substrate is collectively covered on ultra-violet curing glue-line and quantum dot gel layer, which can encapsulate quantum dot fluorescence powder wherein, highly reliable；The quantum spot white light LED of the embodiment of the present invention is the opening that quantum dot film is installed on to the lead frame for being built-in with LED chip, can equally be encapsulated quantum dot fluorescence powder wherein, highly reliable, and the encapsulation process is simple, easy industrialized production.
Description
Technical field
It is shown the present invention relates to white light LEDs and lighting area, it is white in particular to a kind of quantum dot film, quantum dot
Light LED and its packaging method.
Background technique
With the continuous progress of science and technology, LED backlight is increasingly becoming mainstream backlight, compared with traditional CCFL backlight,
LED backlight has many advantages, such as high colour gamut, high brightness, long-life, energy conservation and environmental protection, controllable real-time color, especially high colour gamut
LED backlight make that there is more chromatic colour, color using its electronic products screen such as TV, mobile phone, tablet computer
Reduction degree is higher.
The white light LED backlight of traditional commerce generally uses the LED core of blue chip excitation YAG yellow fluorescent powder at present
Piece, because lacking red color light component in backlight, color gamut value can only achieve NTSC65%~72%.In order to further increase color gamut value,
Technical staff has generallyd use blue chip while having excited the mode of red light fluorescent powder, green light fluorescent powder, but due to current fluorescence
The correlated colour temperature of powder is lower, the half-peak breadth that shines is wider, therefore even if in this way, can only also promote the color gamut value of backlight
To NTSC80% or so.Meanwhile the launching efficiency of existing fluorescent powder is low, to realize that high colour gamut white light needs a large amount of fluorescent powders, leads
Cause the concentration (ratio that fluorescent powder accounts for encapsulation glue) of fluorescent powder in LED encapsulation process very high, to substantially increase encapsulation
The difficulty of operation and the fraction defective of product.
In recent years, quanta point material is gradually taken seriously, and especially quantum dot fluorescence powder has spectrum with size adjustable, hair
Light half-peak width, a series of unique optical properties such as Stokes shift is big, launching efficiency is high, by LED backlight industry
Extensive concern.Currently, quantum dot fluorescence powder realizes that the mode of high colour gamut white light mainly has: (1) light is made in quantum dot fluorescence powder
Membrane material is learned, light guide plate is filled in or is affixed in LCD screen, is excited by blue light or ultraviolet light backlight lamp bead, obtains high colour gamut
White light；(2) glass tube is made in quantum dot fluorescence powder, is placed in screen side, excited, obtained by blue light or ultraviolet light backlight lamp bead
Obtain high colour gamut white light.But when optical film material and glass tube is made in quantum dot fluorescence powder at present, it is difficult quantum dot fluorescence powder
Encapsulation wherein, while not influencing the luminescent properties of quantum dot fluorescent powder, and manufactured optical film material and glass tube and LED lamp bead
Between fiting effect it is poor, it is difficult to obtain excellent high colour gamut white light.For this purpose, having researcher's trial, by quantum dot fluorescence
Powder is directly packaged in LED lamp bead to obtain high colour gamut white light, but since quantum dot fluorescence powder is difficult to directly mix with encapsulating silica gel
It closes, and quantum dot is easy to reunite at high temperature, causes device stability of photoluminescence poor.And the poor sealing effect of encapsulation, quantum dot material
The surface chemistry base of material fails vulnerable to extraneous hydrogen-oxygen key effect, leads to device Photochromic Properties high progression.Therefore, quantum dot
The relieved package of fluorescent powder becomes major issue in need of consideration during encapsulation quantum spot white light LED.
Summary of the invention
The purpose of the present invention is to provide a kind of quantum dot films, can encapsulate quantum dot fluorescence powder wherein, reliably
Property is strong.
Another object of the present invention is to provide a kind of quantum spot white light LEDs, can be by quantum dot film and LED chip
Mating reaction is good, obtains excellent high colour gamut white light.
Another object of the present invention is to provide a kind of packaging method of quantum spot white light LED, simple process, reliabilities
By force.
The embodiment of the present invention is achieved in that
A kind of quantum dot film comprising the top opening edge of concave Pyrex matrix, Pyrex matrix is covered with
Ultra-violet curing glue-line is provided with quantum dot gel layer, ultra-violet curing glue-line and quantum dot gel in the groove of Pyrex matrix
Glass substrate has been collectively covered on layer.
In preferred embodiments of the present invention, above-mentioned quantum dot gel layer is to be doped in translucent silica gel material by quantum dot particle
The quantum dot colloidal sol being mixed to form in material, which coats, to be formed, and quantum dot particle is the mesoporous material for being adsorbed with quantum dot.
In preferred embodiments of the present invention, above-mentioned quantum dot is selected from by CdSe/ZnS quantum dot, InP/ZnS quantum
Point, CdSeTe/ZnS quantum dot, CuInS/ZnS quantum dot, CsPbX3In the combination of quantum dot (X=Cl, Br, I) composition extremely
Few one kind.
In preferred embodiments of the present invention, above-mentioned mesoporous material is mesoporous silicon, mesoporous TiO2Or Al2O3Nanotube.
A kind of quantum spot white light LED based on above-mentioned quantum dot film comprising lead frame, in lead frame
LED chip, and positioned at the quantum dot film of lead frame opening, Pyrex matrix is located in lead frame opening, and
The opening direction of the two is identical, and glass substrate is covered in the opening of the lead frame.
A kind of packaging method of quantum spot white light LED, it is ultraviolet in the top opening edge coated of concave Pyrex matrix
Solidification glue injects quantum dot colloidal sol in the groove of Pyrex matrix, baking 1~5 hour under 100~150；
It takes glass substrate to be pressed in uv-curable glue and quantum dot colloidal sol, obtains pre- bonding sample；
Glass substrate towards pre- bonding sample projects ultraviolet light, solidifies 20~60 minutes, obtains quantum dot film, wherein
Uv-curable glue becomes ultra-violet curing glue-line, and quantum dot colloidal sol becomes quantum dot gel layer；
Quantum dot film is installed on to the opening for being built-in with the lead frame of LED chip, Pyrex matrix is located at and draws
In wire frame opening, and the opening direction of the two is identical, and glass substrate is covered in the opening of the lead frame.
In preferred embodiments of the present invention, above-mentioned quantum dot colloidal sol is made according to following preparation method:
Mesoporous material is soaked in the benzole soln containing quantum dot, ultrasonic vibration 20~30 minutes, then clear with deionized water
It washes, translucent silica gel material is added, is stirred at 50~60 DEG C at least 30 minutes, deaeration under vacuum stands, is cooled to room temperature.
In preferred embodiments of the present invention, before the packaging, first Pyrex matrix and glass substrate are carried out
Cleaning treatment is first cleaned by ultrasonic at least 10 minutes, then rinsed with deionized water specifically by Pyrex matrix and glass substrate
It at least 3 minutes, is put into the mixed liquor of hydrogen peroxide and the concentrated sulfuric acid and boils at least 30 minutes, be cooled to room temperature, finally use deionization
Water rinses out the mixed liquor on surface, with being dried with nitrogen.
It further include past after quantum dot film to be installed on to the opening of lead frame in preferred embodiments of the present invention
Between lead frame and quantum dot film the step of encapsulating silica gel.
In preferred embodiments of the present invention, rotated using sol evenning machine at the top opening edge of concave Pyrex matrix
Uv-curable glue is coated, quantum dot colloidal sol is injected in the groove of Pyrex matrix using gluing process.
The beneficial effect of the embodiment of the present invention is: the quantum dot film of the embodiment of the present invention includes concave Pyrex
Matrix, the top opening edge of Pyrex matrix are covered with ultra-violet curing glue-line, are provided with quantum dot in the groove of Pyrex matrix
Glass substrate is collectively covered on gel layer, ultra-violet curing glue-line and quantum dot gel layer, which can be by quantum
Dot fluorescent powder encapsulates wherein, highly reliable；The quantum spot white light LED of the embodiment of the present invention is to be installed on above-mentioned quantum dot film
It is built-in with the opening of the lead frame of LED chip, which equally can encapsulate it for quantum dot fluorescence powder
In, device it is highly reliable, and the encapsulation process is simple, easy industrialized production.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is the structural schematic diagram for the quantum dot film that first embodiment of the invention provides；
Fig. 2 a-2f is structural schematic diagram of the quantum spot white light LED that provides of second embodiment of the invention in encapsulation process.
Icon: 010- quantum dot film；020- quantum dot gel layer；040- glass substrate；001- quantum spot white light LED；
100- quantum dot film；110- Pyrex matrix；111- groove；120- quantum dot gel layer；130- ultra-violet curing glue-line；
140- glass substrate；200- lead frame；300-LED chip；400- layer of silica gel.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings is implemented
The component of example can be arranged and be designed with a variety of different configurations.
Therefore, the detailed description of the embodiment of the present invention provided in the accompanying drawings is not intended to limit below claimed
The scope of the present invention, but be merely representative of selected embodiment of the invention.Based on the embodiments of the present invention, this field is common
Technical staff's every other embodiment obtained without creative efforts belongs to the model that the present invention protects
It encloses.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.
In the description of the present invention, it should be noted that the orientation or position of the instructions such as term " on ", "lower", "inner", "outside"
Set relationship be based on the orientation or positional relationship shown in the drawings or the invention product using when the orientation or position usually put
Relationship is set, is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning are necessary
It with specific orientation, is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.
In the description of the present invention, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " setting ",
" installation ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally connect
It connects；It can be mechanical connection, be also possible to be electrically connected；It can be directly connected, can also indirectly connected through an intermediary, it can
To be the connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood with concrete condition
Concrete meaning in the present invention.
First embodiment
It please refers to shown in Fig. 1, the present embodiment provides a kind of quantum dot films 010 comprising concave Pyrex base
Body 110, the top opening edge of Pyrex matrix 110 are covered with ultra-violet curing glue-line 130, set in the groove of Pyrex matrix 110
It is equipped with quantum dot gel layer 020, has collectively covered glass substrate 040 on ultra-violet curing glue-line 130 and quantum dot gel layer 020,
In the present embodiment, glass substrate 040 is just completely covered by ultra-violet curing glue-line 130 and quantum dot gel layer 020.
Wherein, ultra-violet curing glue-line 130 is that uv-curable glue coats to be formed, and quantum dot gel layer 020 is by quantum dot
Particle is doped in the quantum dot colloidal sol that is mixed to form in translucent silica gel material and coats to be formed, and quantum dot particle is to be adsorbed with quantum
The mesoporous material of point.
More specifically, quantum dot be selected from by CdSe/ZnS quantum dot, InP/ZnS quantum dot, CdSeTe/ZnS quantum dot,
CuInS/ZnS quantum dot, CsPbX3At least one of the combination of quantum dot (X=Cl, Br, I) composition, i.e., containing a certain amount of
The quantum dot of core/shell structure；Mesoporous material is mesoporous silicon (mostly mesoporous SiO2), mesoporous TiO2Or Al2O3Nanotube is based on
Hexagonal mesoporous solid nanoparticles；Silica gel can be selected in translucent silica gel material.That the quantum dot in the present embodiment is selected is CdSe/
ZnS quantum dot, that mesoporous material is selected is mesoporous SiO2, quantum dot gel layer 020 is by being adsorbed with CdSe/ZnS quantum dot
Mesoporous SiO2It is doped in the quantum dot colloidal sol that is mixed to form in silica gel and coats to be formed.
The quantum dot film 010 of the present embodiment uses molecular self-assembling formation mechenism, is carried out with mesoporous material to quantum dot
Chemical modification forms quantum dot particle, moreover, utilizing concave Pyrex matrix 110 and flat glass substrate 040
Quantum dot particle is packaged into independent film by ultra-violet curing Intermediate Layer Bonding technique by the film in being formed equipped with accommodating chamber
Piece, the quantum dot film 010 constitute the light conversion layer in LED encapsulation.
The quantum dot film 010 of the present embodiment is made using following preparation method:
S101 pretreatment: first concave Pyrex matrix 110 and flat glass substrate 040 are carried out at cleaning
Reason, avoids bringing impurity into subsequent encapsulation process, method particularly includes: by Pyrex matrix 110 and glass substrate 040, first surpass
Sound cleans at least 10 minutes, and acetone cleans degreasing, then is rinsed at least 3 minutes with deionized water, is put into hydrogen peroxide and the concentrated sulfuric acid
Mixed liquor in boil at least 30 minutes, be cooled to room temperature, the mixed liquor on surface finally rinsed out with deionized water, is blown with nitrogen
It is dry.The present embodiment is first to be cleaned by ultrasonic Pyrex matrix 110 and glass substrate 040 12 minutes, then rinsed with deionized water
It 5 minutes, is put into the mixed liquor of hydrogen peroxide and the concentrated sulfuric acid and boils 30 minutes, be cooled to room temperature, finally rinsed out with deionized water
The mixed liquor on 040 surface of Pyrex matrix 110 and glass substrate completes Pyrex matrix 110 and glass with being dried with nitrogen
The pretreatment of glass substrate 040.
S102 coating: using sol evenning machine Pyrex matrix 110 top opening edge coated uv-curable glue, using dispensing
Technique injects quantum dot colloidal sol in the groove of Pyrex matrix 110, is subsequently placed in oven, toasts at 100~150 DEG C
1~5 hour, the present embodiment was toasted 3 hours at 180 DEG C.Baking in the present embodiment is enterprising in open heating rack
Capable, quantum dot colloidal sol is solidified by heat transfer by 110 bottom of Pyrex matrix, is room at the top of Pyrex matrix 110
Warm environment, 100~150 DEG C of baking temperature are the temperature of the heating rack of 110 bottom of Pyrex matrix.Also to guarantee simultaneously
The heating temperature of quantum dot colloidal sol is no more than 100 DEG C, this is because the heating temperature of quantum dot colloidal sol once more than 100 DEG C, seals
The device performance of dress can be very poor.
Wherein, quantum dot colloidal sol is made in advance according to following preparation method:
Using the mesoporous material based on hexagonal mesoporous solid nanoparticles as main body, the amount containing a certain amount of core/shell structure
Mesoporous material is soaked in the benzole soln of the quantum dot containing a certain amount of core/shell structure, surpasses as object by the benzole soln of son point
Acoustic shock is swung 20~30 minutes, and ultrasonic time is too long to will lead to material degradation no more than half an hour, then is washed with deionized water
Extra quantum dot outside mesoporous material hole wall is added translucent silica gel material, stirs at 50~60 DEG C at least 30 minutes, under vacuum
Deaeration stands, is cooled to room temperature.The present embodiment is specifically by mesoporous SiO2It is soaked in containing a certain amount of CdSe/ZnS quantum dot
In benzole soln, ultrasonic vibration 20 minutes, then mesoporous SiO is washed with deionized water2Silicon is added in extra quantum dot outside hole wall
Glue, is stirred 30 minutes at 60 DEG C, and deaeration under vacuum stands, is cooled to room temperature to get quantum dot colloidal sol.The present embodiment passes through
The surface chemistry key of quantum dot is modified, the reuniting effect in Colloidal Quantum Dots ageing process is reduced.
S103 is bonded in advance: being taken glass substrate 040 to be pressed in uv-curable glue and quantum dot colloidal sol, is utilized glass substrate 040
Self weight and uv-curable glue surface invade profit effect and complete pre- bonding between glass substrate 040 and Pyrex matrix 110, obtain
To pre- bonding sample.
S104 solidifies: the glass substrate 040 towards pre- bonding sample projects ultraviolet light, solidifies 20~60 minutes, the present embodiment
Solidification 40 minutes, obtains quantum dot film 010, wherein uv-curable glue is solidified into ultra-violet curing glue-line 130, and quantum dot is molten
Adhesive curing becomes quantum dot gel layer 020.
The quantum dot film 010 encapsulates quantum dot wherein, and only in Pyrex matrix 110 and glass substrate 040
Between coat uv-curable glue, avoid uv-curable glue from impacting the package quality of quantum dot.
Second embodiment
Referring to figure 2. shown in d and Fig. 2 f, the present embodiment provides a kind of quantum spot white light LEDs 001 comprising lead frame
200, the LED chip 300 in lead frame 200, and the quantum dot film 100 positioned at 200 opening of lead frame.
Wherein, referring to fig. 2 shown in d, quantum dot film 100 includes concave Pyrex matrix 110, Pyrex base
The top opening edge of body 110 is covered with ultra-violet curing glue-line 130, is provided with quantum dot gel in the groove 111 of Pyrex matrix 110
Layer 120 has collectively covered flat glass substrate 140, this implementation on ultra-violet curing glue-line 130 and quantum dot gel layer 120
In example, glass substrate 140 is extended outside ultra-violet curing glue-line 130.Quantum dot gel layer 120 is doped in by quantum dot particle
The quantum dot colloidal sol that light silica gel material is mixed to form, which coats, to be formed, and quantum dot particle is the mesoporous material for being adsorbed with quantum dot.
In the present embodiment, quantum dot is InP/ZnS quantum dot, mesoporous material Al2O3Nanotube, translucent silica gel material are that methyl system has
Machine silica gel.
Pyrex matrix 110 is located in lead frame 200 is open, and the opening direction of the two is identical, glass substrate 140
It is covered in the opening of the lead frame 200, in the present embodiment, glass substrate 140 is covered in quantum dot gel layer 120, ultraviolet
Solidify on glue-line 130 and lead frame 200.
The packaging method of the quantum spot white light LED 001 of the quantum dot film 100 are as follows:
S201 pretreatment: first concave Pyrex matrix 110 and flat glass substrate 140 are carried out at cleaning
Reason, the structure of Pyrex matrix 110 are as shown in Figure 2 a.Specifically by Pyrex matrix 110 and glass substrate 140, first surpass
Sound cleans 10 minutes, then is rinsed 3 minutes with deionized water, is put into the mixed liquor of hydrogen peroxide and the concentrated sulfuric acid and boils 30 minutes, cold
But to room temperature, the mixed liquor on surface is finally rinsed out with deionized water, with being dried with nitrogen.
S202 coating: using sol evenning machine concave Pyrex matrix 110 top opening edge coated uv-curable glue,
Uv-curable glue can become ultra-violet curing glue-line 130 after subsequent technique is handled, as shown in Figure 2 a；Using gluing process in boron
Quantum dot colloidal sol is injected in the groove 111 of silica glass matrix 110, is toasted 4 hours at 150 DEG C, and quantum dot colloidal sol is by subsequent
Quantum dot gel layer 120 can be become after process, as shown in Figure 2 c.
Wherein, quantum dot colloidal sol is made according to following preparation method:
By mesoporous material Al2O3Nanotube is soaked in the benzole soln of the quantum dot containing InP/ZnS, and ultrasonic vibration 30 minutes, then
It is cleaned with deionized water, silica gel is added, is stirred 40 minutes at 50 DEG C, deaeration under vacuum stands, is cooled to room temperature.
S203 is bonded in advance: being taken glass substrate 140 to be pressed in uv-curable glue and quantum dot colloidal sol, is obtained pre- bonding sample.
S204 solidifies: the glass substrate 140 towards pre- bonding sample projects ultraviolet light, solidifies 60 minutes, it is thin to obtain quantum dot
Film 100, at this point, uv-curable glue becomes ultra-violet curing glue-line 130, quantum dot colloidal sol becomes quantum dot gel layer 120, such as Fig. 2 d
It is shown.
Quantum dot film 100: being installed on the opening for being built-in with the lead frame 200 of LED chip 300 by S205 assembling,
Pyrex matrix 110 is located in lead frame 200 is open, and the opening direction of the two is identical, and glass substrate 140 is covered in this
In the opening of lead frame, as shown in Figure 2 e.
S206 encapsulating: toward injection encapsulating silica gel between lead frame 200 and quantum dot film 100, and it is correspondingly formed silica gel
Layer 400, to fixed LED electrical connection, the light extraction efficiency of raising packaging.Quantum spot white light LED 001 is ultimately formed, such as
Shown in Fig. 2 f.
In conclusion quantum dot film of the invention can encapsulate quantum dot fluorescence powder wherein, by quantum dot film group
Quantum dot fluorescence powder can be encapsulated wherein by filling the quantum spot white light LED formed equally, highly reliable, and the encapsulation process technique
Simply, highly reliable.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of quantum dot film, which is characterized in that it includes concave Pyrex matrix, the Pyrex matrix
Top opening edge is covered with ultra-violet curing glue-line, and quantum dot gel layer is provided in the groove of the Pyrex matrix, described ultraviolet
Glass substrate is collectively covered on solidification glue-line and the quantum dot gel layer, the quantum dot gel layer is by quantum dot particle
It is doped in the quantum dot colloidal sol being mixed to form in translucent silica gel material and coats to be formed, the quantum dot particle is to be adsorbed with quantum
The mesoporous material of point, the quantum dot colloidal sol are made according to following preparation method:
Mesoporous material based on hexagonal mesoporous solid nanoparticles is soaked in the benzole soln containing quantum dot, ultrasonic vibration 20~
30 minutes, then cleaned with deionized water, translucent silica gel material is added, is stirred at 50~60 DEG C at least 30 minutes, is taken off under vacuum
Bubble, stands, is cooled to room temperature.
2. quantum dot film according to claim 1, which is characterized in that the quantum dot is selected from by CdSe/ZnS quantum
Point, InP/ZnS quantum dot, CdSeTe/ZnS quantum dot, CuInS/ZnS quantum dot, CsPbX3Quantum dot, X=Cl, Br, I composition
At least one of combination.
3. quantum dot film according to claim 1, which is characterized in that the mesoporous material is mesoporous silicon, mesoporous TiO2Or
Al2O3Nanotube.
4. a kind of quantum spot white light LED based on quantum dot film described in any one of claims 1 to 3, which is characterized in that
It includes lead frame, the LED chip in the lead frame, and the amount positioned at the lead frame opening
Son point film, the Pyrex matrix is located in the opening of the lead frame, and the opening direction of the two is identical, the glass
Glass substrate is covered in the opening of the lead frame.
5. a kind of packaging method of quantum spot white light LED, which is characterized in that at the top opening edge of concave Pyrex matrix
Uv-curable glue is coated, quantum dot colloidal sol is injected in the groove of the Pyrex matrix, in 100~150 lower bakings 1~5
Hour；The quantum dot colloidal sol is made according to following preparation method:
Mesoporous material based on hexagonal mesoporous solid nanoparticles is soaked in the benzole soln containing quantum dot, ultrasonic vibration 20~
30 minutes, then cleaned with deionized water, translucent silica gel material is added, is stirred at 50~60 DEG C at least 30 minutes, is taken off under vacuum
Bubble, stands, is cooled to room temperature；
It takes glass substrate to be pressed in the uv-curable glue and the quantum dot colloidal sol, obtains pre- bonding sample；
The glass substrate towards the pre- bonding sample projects ultraviolet light, solidifies 20~60 minutes, obtains quantum dot film,
In, the uv-curable glue becomes ultra-violet curing glue-line, and the quantum dot colloidal sol becomes quantum dot gel layer；
The quantum dot film is installed on to the opening for being built-in with the lead frame of LED chip, Pyrex matrix position
In the lead frame is open, and the opening direction of the two is identical, and the glass substrate is covered in opening for the lead frame
On mouth.
6. the packaging method of quantum spot white light LED according to claim 5, which is characterized in that before the packaging, first
Cleaning treatment is carried out to Pyrex matrix and glass substrate, method particularly includes: by the Pyrex matrix and the glass
Substrate is first cleaned by ultrasonic at least 10 minutes, then is rinsed at least 3 minutes with deionized water, is put into the mixing of hydrogen peroxide and the concentrated sulfuric acid
It is boiled in liquid at least 30 minutes, is cooled to room temperature, the mixed liquor on surface is finally rinsed out with deionized water, with being dried with nitrogen.
7. the packaging method of quantum spot white light LED according to claim 5, which is characterized in that by the quantum dot film
It is installed on after the opening of the lead frame, further includes toward encapsulating silicon between the lead frame and the quantum dot film
The step of glue.
8. the packaging method of quantum spot white light LED according to claim 5, which is characterized in that using sol evenning machine in recessed
The top opening edge rotary coating uv-curable glue of the Pyrex matrix of shape, using gluing process in the Pyrex matrix
Quantum dot colloidal sol is injected in groove.
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| CN107833963A (en) * | 2017-09-21 | 2018-03-23 | 华南师范大学 | The secondary airtight packaging method of quantum dot On chip white light LEDs |
| CN108054294A (en) * | 2017-10-26 | 2018-05-18 | 南昌航空大学 | A kind of infusion method prepares transition metal oxide/quantum dot bulk heterojunction method |
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| CN109545945B (en) * | 2018-11-28 | 2021-03-23 | 上海应用技术大学 | Preparation method of sandwich fluorescent glass for white light LED |
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| CN111987206A (en) * | 2019-05-23 | 2020-11-24 | 易美芯光（北京）科技有限公司 | Quantum dot LED packaging device and manufacturing method |
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| CN112635640A (en) * | 2020-12-14 | 2021-04-09 | 深圳信息职业技术学院 | Quantum dot light-emitting device and preparation method and application thereof |
| CN112631019A (en) * | 2020-12-25 | 2021-04-09 | 舟山扑浪实业有限公司 | Preparation method of quantum dot display panel and quantum dot display panel |
| CN113659058B (en) * | 2021-08-20 | 2023-10-20 | 京东方科技集团股份有限公司 | Light-emitting device, preparation method thereof and display device |
| CN114725252A (en) * | 2022-03-04 | 2022-07-08 | 东莞市中麒光电技术有限公司 | Quantum dot solution injection method, light emitting chip and light color conversion structure |
| CN115440869A (en) * | 2022-08-16 | 2022-12-06 | 芜湖聚飞光电科技有限公司 | Quantum dot membrane assembly, manufacturing method thereof and LED packaging body |
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