JP5107882B2 - Sheet for optical semiconductor encapsulation - Google Patents

Description

  The present invention relates to an optical semiconductor sealing sheet. More specifically, the present invention relates to a package for sealing a light emitting element such as a light emitting diode or a semiconductor laser, a sheet for optical semiconductor sealing that can be collectively sealed, an optical semiconductor device that is sealed with the sheet, And an optical semiconductor device manufacturing method using the sheet.

  One of visible light sources for display or illumination is a light emitting device using a light emitting diode (LED). Among these types of light-emitting devices, those that emit white light include devices that combine LEDs that emit near-ultraviolet or blue wavelengths and phosphors that emit light when excited by the wavelengths of these light sources.

Examples of the white LED light emitting device include a shell type device and a surface mount type device in which an LED emitting blue light and a phosphor emitting yellow light by the blue wavelength, for example, a YAG phosphor are combined. For sealing the LED in such an apparatus, an epoxy resin or a silicone resin in which the phosphor is dispersed is used (see Patent Documents 1 and 2).
Japanese Patent No. 2927279 Japanese Patent No. 3503139

  Many YAG phosphors have an average particle diameter of about 1 to 10 μm, and easily scatter light over a wide range. On the other hand, most of the light emitted from the blue LED and the yellow phosphor loses energy inside the sealing material due to scattering, and as a result, the white light rays that are transmitted through the sealing material are reduced. This phenomenon has a problem that the luminous efficiency of the white LED device is lowered and the luminance of the white LED is lowered.

  An object of the present invention is to provide an optical semiconductor sealing sheet that can collectively seal an optical semiconductor and maintain high luminance, an optical semiconductor device that is sealed with the sheet, and An object of the present invention is to provide an optical semiconductor device manufacturing method using the sheet.

  As a result of repeated studies to solve the above problems, the present inventors have found that a sealing layer having a two-layer structure of a resin layer A and a resin layer B rather than a sealing material in which a phosphor is dispersed in a sealing resin. In the stopping material, the resin layer A embeds and seals the LED element, whereas the resin layer B further seals from above, but at that time, a plate-like phosphor with high light transmittance It has been found that the loss of white light due to light scattering can be suppressed by containing, and the present invention has been completed.

That is, the present invention
[1] In an optical semiconductor sealing sheet in which a resin layer A is laminated directly or indirectly on a resin layer A in which an optical semiconductor element can be embedded, the resin layer B is filled with a plate of an inorganic phosphor. The optical semiconductor sealing sheet , wherein the inorganic phosphor is at least one phosphor fine particle selected from the group consisting of a YAG phosphor, a SiAlON phosphor, and a SrBaSiO ₄ phosphor Sealing sheet ,
[2] An optical semiconductor device formed by sealing with the optical semiconductor sealing sheet according to [1], and [3] a semiconductor device is sealed using the optical semiconductor sealing sheet according to [1]. The present invention relates to a method for manufacturing an optical semiconductor device.

  The sheet | seat for optical semiconductor sealing of this invention has the outstanding effect that high brightness | luminance can be maintained. In addition, since the sheet shape can be taken together by simply placing and pressing and heating on the element mounting substrate, the efficiency of the sealing work is improved, and an optical semiconductor device such as a package Can be manufactured with high throughput, and as a result, cost reduction can also be achieved.

  The sheet for optical semiconductor encapsulation of the present invention is an optical semiconductor encapsulation sheet in which a resin layer B is directly or indirectly laminated on a resin layer A in which an optical semiconductor element (LED element) can be embedded, The resin layer B has a great feature in that it is filled with an inorganic phosphor plate (hereinafter also referred to as a phosphor plate). In the present specification, the “directly laminated” sheet means a sheet formed by directly laminating the resin layer B on the resin layer A, and the “indirectly laminated” sheet means In addition, it means a sheet formed by laminating a resin layer A and a resin layer B through another known layer such as an epoxy resin according to a conventional method. Further, “being embeddable” means that the LED element and the gold wire wired to the element can be embedded without being damaged.

  By preparing the phosphor in a plate shape, light scattering is suppressed because the haze of the plate is smaller than that of the sealing resin layer in which the phosphor is dispersed. In particular, a plate obtained by firing phosphor fine particles having an average particle diameter of less than 1 μm has a dense structure, and thus the light scattering suppression effect is more prominent. As a result, energy loss due to light scattering of the phosphor particles is suppressed, and a decrease in luminance of LED light emission can be suppressed. Moreover, the light extraction efficiency from an LED element can be made high by installing this plate in the outermost layer of sealing resin.

  Furthermore, in a general white LED light emitting device, a part of the blue light emitted from the blue LED is emitted as blue as it is, and the rest is converted into yellow light by a phosphor having a wavelength conversion function. In this invention, when the phosphor plate is filled in the resin layer B, the amount and thickness of the plate are controlled to control the whiteness. It is possible to adjust the degree of conversion, i.e., bluish white or yellowish white.

  The sheet for optical semiconductor encapsulation of the present invention contains a resin layer A and a resin layer B containing a phosphor plate.

  The resin layer A is a resin having a strength capable of embedding the LED element without causing physical damage to the LED element and the gold wire wired to the element when the LED is sealed. It is constituted by.

  Such a resin is not particularly limited as long as it is a resin conventionally used for optical semiconductor encapsulation, and includes a transparent resin such as a silicone resin, an epoxy resin, a styrene resin, an acrylic resin, a polycarbonate resin, a urethane resin, and a polyolefin resin. However, it is preferable to contain a silicone resin as a main component from a viewpoint of durability. In the present specification, the “main component” means 50% or more of the components constituting the resin layer.

  Resin layer A in the present invention has a flexibility that changes the shape of the layer depending on the pressure at the time of sealing, and has a strength that can withstand impacts when cured, etc. Therefore, as the silicone resin, a silicone resin having two reaction systems and a modified silicone resin are preferable.

  Examples of the silicone resin having two reaction systems include those having two reaction systems of silanol condensation reaction and epoxy reaction, and those having two reaction systems of silanol condensation reaction and hydrosilylation reaction.

  The modified silicone resin is a resin having a heterosiloxane skeleton such as borosiloxane, aluminosiloxane, phosphor siloxane, titaner siloxane, etc., in which Si atoms in the siloxane skeleton are partially substituted with atoms such as B, Al, P, Ti, etc. Is exemplified.

  These resins can be produced by a known production method, and will be described by taking a resin having a heterosiloxane skeleton as an example. For example, after adding 40.2 mol of aluminum isopropoxide to 0.2 mol of both-end silanol-type polysiloxane derivative, the mixture was stirred at room temperature for 24 hours, and the insoluble matter was removed from the resulting mixture by centrifugation, and at 50 ° C. under reduced pressure. Polyaluminosiloxane can be obtained by concentrating for 2 hours.

  Further, the obtained silicone resin may be further cross-linked by a known coupling agent, for example, an epoxy silane coupling agent, from the viewpoint of post-curing. In the present invention, examples of suitable coupling agents include commercially available products such as epoxy type silane coupling agents (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403).

  The crosslinking method is not particularly limited. For example, the crosslinking can be performed by mixing a silicone resin and a coupling agent and stirring at 80 ° C. for 7 minutes under reduced pressure.

  As a usage-amount of a coupling agent, 2-20 weight part is preferable with respect to 100 weight part of silicone resins before bridge | crosslinking, and 5-10 weight part is more preferable.

  The content of the silicone resin in the resin constituting the resin layer A is preferably 70% by weight or more, more preferably 90% by weight or more, and further preferably substantially 100% by weight.

  In addition to the resin, the resin layer A contains additives such as a curing agent, a curing accelerator, an anti-aging agent, a modifier, a surfactant, a dye, a pigment, a discoloration inhibitor, and an ultraviolet absorber as raw materials. May be.

  For the resin layer A, the resin or an organic solvent solution of the resin is appropriately formed by, for example, casting, spin coating, roll coating, or the like on a sheet (for example, biaxially stretched polyester film) whose surface has been release-treated. The film is formed to a thickness, and further dried at a temperature at which the solvent can be removed without allowing the curing reaction to proceed, thereby forming a sheet. The temperature at which the formed resin solution is dried cannot be determined unconditionally because it varies depending on the type of resin or solvent, but is preferably 80 to 150 ° C, more preferably 90 to 150 ° C.

  Moreover, the sheet thickness of the resin layer A after heat drying is preferably 50 to 800 μm, more preferably 100 to 600 μm, and further preferably 200 to 550 μm from the viewpoint of whitening. In addition, the obtained sheet | seat can also be shape | molded as one sheet | seat which has the thickness of the said range by laminating | stacking several sheets and carrying out the hot press.

The storage elastic modulus at 150 ° C. of the resin layer A is preferably 1.0 × 10 ⁵ Pa or less, more preferably 1.0 × 10 ^{2 to} 1.0 × 10 ⁴ Pa, and more preferably 5.0 × 10 ^{2 to} 1.0 × 10 ³ Pa. In addition, from the viewpoint of protecting the LED element and the like from external impact after sheet curing, the storage elastic modulus at 150 ° C. after heat curing at 200 ° C. for 1 hour is preferably 5.0 × 10 ⁵ Pa or more, and 1.0 × 10 ⁶ Pa or more. Is more preferable, and 5.0 × 10 ^{6 to} 2.0 × 10 ⁹ Pa is more preferable.

  In addition, since the resin layer A does not absorb the light emitted from the LED element, it is excellent in transparency. The transmittance is preferably 95% or more, more preferably 97% or more, and further preferably 98 to 100%. In the present specification, the light transmittance is measured by the method described in Examples described later.

  The resin layer B is filled with an inorganic phosphor plate (phosphor plate).

  The resin constituting the resin layer B is the same as the resin constituting the resin layer A, and is not particularly limited, but a silicone resin is preferable from the viewpoint of durability.

  The inorganic phosphor plate is not particularly limited as long as the inorganic phosphor is formed into a plate shape. In the present specification, the “plate” means a shape having a layer having a certain thickness.

As the inorganic phosphor, in order to obtain a desired whiteness (color temperature), various inorganic phosphors can be selected as raw materials depending on the absorption spectrum and emission spectrum of the phosphor. At least one selected from the group consisting of a phosphor, a SiAlON phosphor, a CaAlSiN phosphor, a SrS phosphor, and a SrBaSiO ₄ phosphor can be preferably used.

Specifically, as the YAG phosphor, the following structural formula (I):
A ₃ B ₅ O ₁₂ (I)
(In the formula, A and B each independently represent a trivalent metal)
The garnet represented by is illustrated.

  A and B in formula (I) are not particularly limited as long as they are trivalent metals, but from the viewpoint of fluorescent color, A is preferably selected from the group consisting of Y, Gd, La, and Tb. Those selected from the group consisting of Al and Ga are preferred.

  The garnet preferably contains at least one kind of rare earth metal, and the rare earth metal is preferably selected from the group consisting of Ce, Gd, La, Tb, Pr, and Eu.

As the garnet represented by the formula (I), Y ₃ Al ₅ O ₁₂ : Ce, (Y, Tb) ₃ Al ₅ O ₁₂ : Ce, (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ : Ce Is exemplified.

CaSiAlON: Eu as the SiAlON phosphor, CaAlSiN ₃ : Eu as the CaAlSiN phosphor, SrGa ₂ S ₄ : Eu as the SrS phosphor, and (Sr, Ca, Ba as the SrBaSiO ₄ phosphor) ) ₂ SiO ₄ : Eu is exemplified.

In addition to the above, other inorganic phosphors may be used. Examples of other inorganic phosphors include Ca ₃ Sc ₂ Si ₃ O ₁₂ : Ce, Ba ₃ MgSi ₂ O ₈ : Eu, BaMgAl ₁₀ O _17. : Eu, La ₂ O ₂ S: Eu, Ca ₂ Si ₅ N ₈ : Eu and the like.

  As the inorganic phosphor, one produced according to a known production method may be used, or a commercially available product may be used.

The inorganic phosphor plate may contain an additive in addition to the inorganic phosphor, and the additive is preferably a magnetic material such as SiO ₂ or MgO in addition to the binder from the viewpoint of improving the firing ability. .

  The method of forming the inorganic phosphor into a plate shape is not particularly limited. For example, the raw material of the inorganic phosphor and, if necessary, an additive such as a binder and a solvent, a pestle and a mortar, or a ball mill After mixing with a mixer such as a bead mill, it is molded by mold compression molding, hot isostatic pressing (HIP), cold isostatic pressing (CIP), etc., and less than the melting point of the inorganic phosphor. It is obtained by sintering at a high temperature, preferably 500 to 2000 ° C., if necessary under pressure.

  The average particle diameter of the raw material inorganic phosphor used for preparing the plate is preferably less than 1 μm, more preferably less than 500 nm, and even more preferably less than 200 nm, from the viewpoint of light transmittance of the plate. When the average particle size is less than 1 μm, the components are fused to each other by firing under high temperature and high pressure, so that the resulting plate has a light transmittance of 50% or more, and generation of voids is suppressed. Therefore, it is preferable. Further, the average particle size is preferably 5 nm or more from the viewpoint of aggregation prevention and mixing of raw materials. Therefore, the raw material used for preparing the plate may be used after having previously adjusted the particle size and having a particle size in the above range. In addition, in this specification, the average particle diameter of inorganic fluorescent substance can be measured by the method as described in the below-mentioned Example.

  The method for adjusting the particle size of the raw material is not particularly limited, and a known method such as a wet chemical method (high frequency induction plasma torch method) or a gas phase pyrolysis method is used.

Moreover, the plate composition of the obtained inorganic phosphor and the raw material need not have the same composition. Specifically, for example, for YAG: Ce (cerium addition: yttrium-aluminum-garnet system) plate preparation, YAG: Ce powder, Y-Al-O-Ce-containing amorphous powder, YAlO ₃ : Ce and Al A mixture of ₂ O ₃ powder, a mixture of Y ₂ O ₃ , Al ₂ O ₃ and CeO ₂ powder, or a mixture thereof can be used.

The size of the inorganic phosphor plate (phosphor plate) thus obtained (the size of the plane of the phosphor plate, also referred to as the plate plane area) is the cross section of the LED element (the cross section horizontal to the mounting substrate, the cross section of the LED element). It is preferably the same size or larger than that, and specifically, 0.1 to 50 mm ² is preferable, and 0.5 to ²⁰ mm ² is more preferable. Moreover, it is preferably 1.0 to 2.0 times, more preferably 1.0 to 1.5 times the plane of the LED element.

  The thickness of the phosphor plate is not generally determined because the white light emission varies depending on the impurity content of the inorganic phosphor used as a raw material, but is preferably 20 to 500 μm, more preferably 30 to 300 μm from the viewpoint of light scattering. Preferably, 50 to 200 μm is more preferable.

  Since the phosphor plate in the present invention is obtained by sintering a raw material aggregate having randomly oriented crystals, the refractive index hardly varies depending on the crystal orientation, and exhibits light scattering. .

  The phosphor plate absorbs the light emitted from the LED element and emits light of a different wavelength. From the viewpoint of maintaining the high brightness of the LED element, the wavelength conversion efficiency of the phosphor plate, that is, the internal quantum efficiency is 30% or more is preferable, 60% or more is more preferable, and 80% or more is more preferable. In the present specification, the internal quantum efficiency of the phosphor plate can be measured by the method described in Examples described later.

  In addition, the phosphor plate absorbs the light emitted from the LED element, and at the same time, the light having a wavelength other than the LED emission wavelength band preferably has a high transmittance, for example, incident light having a wavelength of 400 to 500 nm. The transmittance is preferably 40% or more, more preferably 60% or more, and still more preferably 90 to 100%.

  The haze (turbidity) of the phosphor plate is preferably 70% or less, more preferably 50% or less, and still more preferably 0 to 10% from the viewpoint of light transmittance. In addition, in this specification, the haze of a fluorescent substance plate can be measured by the method as described in the below-mentioned Example.

  The phosphor plate having such physical properties is preferably a distance of 100 to 5000 μm, more preferably 200 to 1000 μm, and still more preferably 200 to 500 μm (from the plane of the phosphor plate) from the viewpoint of improving the luminance of white light emission. It is desirable to arrange them via the shortest vertical distance from the plane of the LED element. In addition, in order to provide the said space | interval, what is necessary is just to adjust the thickness of the resin layer A, for example, when a fluorescent substance plate is arrange | positioned in the end of the resin layer B, and it interposes with the resin layer A. Specifically, for example, when it is desired to increase the distance from the LED element so as to be within the above range, the thickness of the resin layer A may be increased. Can be made thinner.

  The method for filling the phosphor layer into the resin layer B is not particularly limited as long as the phosphor plate is embedded in accordance with the position of each element so as to face each LED element. Further, the number of filling is not limited, and one or more may be provided for each element. In the case of a plurality of elements, the plates may be connected to each other or may be filled at intervals. To explain with a specific example, for example, a method of filling a phosphor plate in a hole provided in advance according to the position of the LED element facing the resin layer B, and a position corresponding to the position of the facing LED element And a method of filling the phosphor plate by covering with a resin constituting the resin layer B and forming a sheet.

  As a method of covering the phosphor plate with the resin constituting the resin layer B, for example, the phosphor plate is opposed to each LED element on a sheet (for example, a biaxially stretched polyester film) whose surface has been released. After the arrangement, the resin or an organic solvent solution of the resin is applied thereon by, for example, a method such as casting, spin coating, roll coating, and the like to form a film having an appropriate thickness. It is formed into a sheet by drying at a temperature at which the solvent can be removed without proceeding. The temperature at which the formed resin solution is dried cannot be determined unconditionally because it varies depending on the type of resin or solvent, but is preferably 80 to 150 ° C, more preferably 90 to 150 ° C.

  Further, the sheet thickness after heat drying of the resin layer B including the phosphor plate is preferably 100 to 1000 μm, and more preferably 150 to 500 μm from the viewpoint of whitening. In addition, the obtained sheet | seat can also be shape | molded as one sheet | seat which has the thickness of the said range by laminating | stacking two or more sheets, and in such a case, a fluorescent substance plate is inorganic which has a different wavelength conversion function. It may be a plate made of a phosphor.

  Since the resin layer B includes the above-described phosphor plate, for example, when formed into a sheet having a thickness of 200 to 500 μm, the transmittance for incident light having a wavelength of 400 to 500 nm is preferably 95% or more, More preferably, it is 97% or more, and more preferably 98 to 100%.

  The method for laminating the resin layer A and the resin layer B is not particularly limited, but from the viewpoint of interlayer adhesion, both layers are laminated so that the surface of the resin layer B where the phosphor plate is located and the resin layer A are opposed to each other. And a method of hot pressing at 25 to 200 ° C. for pressure bonding.

  Thus, the sheet for optical semiconductor encapsulation of the present invention including a two-layer structure in which the resin layer A and the resin layer B including an inorganic phosphor plate are laminated is obtained.

  Moreover, this invention provides the optical semiconductor device formed by sealing with the sheet | seat for optical semiconductor sealing of this invention.

  Since the optical semiconductor device of the present invention contains an optical semiconductor encapsulating sheet that has a small chromaticity variation and can maintain high brightness of the LED element as an optical semiconductor element encapsulant, a blue or white LED Even an optical semiconductor device mounted with an element can be taken out with high emission luminance, and can be suitably used.

  The optical semiconductor device of the present invention can be produced without any limitation as long as it is sealed with the optical semiconductor sealing sheet of the present invention. As a preferable manufacturing method of the optical semiconductor device of the present invention, a semiconductor device is sealed using the optical semiconductor sealing sheet of the present invention. Specifically, for example, an LED element is used. Is a method including a step of laminating and laminating the above optical semiconductor sealing sheet on a substrate on which is mounted.

  The optical semiconductor sealing sheet of the present invention and the substrate can be bonded according to a conventional method, for example, by heating at 25 to 200 ° C. for 30 to 300 seconds using a laminator or the like.

  EXAMPLES Hereinafter, although this invention is demonstrated based on an Example, this invention is not limited at all by these Examples.

[Elastic modulus of resin layer]
A sheet with a thickness of about 1 mm is formed by laminating a plurality of resin layers, and with a dynamic viscoelasticity measuring device (DMS-200, manufactured by SII NanoTechnology Co., Ltd.), the viscoelasticity during shearing is measured, From the measurement results, the storage elastic modulus at 150 ° C. is defined as the elastic modulus of the resin layer.

[Light transmittance of resin layer]
Using a spectrophotometer (U-4100, manufactured by Hitachi High-Tech), the transmittance at a wavelength of 380 to 780 nm is measured.

[Average particle size of inorganic phosphor]
The diameter of 100 particles shown in the image is measured by SEM observation, and the average value thereof is defined as the average particle diameter.

[Internal quantum efficiency of phosphor plate]
Using MCPD (instant multi-photometry system MCPD-3000, manufactured by Otsuka Electronics Co., Ltd.), the fluorescence intensity when the phosphor is excited is obtained, and thereby the internal quantum efficiency is calculated.

[Haze of phosphor plate]
A sample (film) coated on a glass plate is measured using a reflectance / transmittance meter (HR-100, manufactured by Murakami Color Research Laboratory).

<Inorganic phosphor synthesis example 1> (YAG: Ce phosphor synthesis example)
Yttrium nitrate hexahydrate 0.14923 mol (14.29 g), aluminum nitrate nonahydrate 0.25 mol (23.45 g), cerium nitrate hexahydrate 0.015 mol (0.081 g) were dissolved in 250 mL of distilled water, and 0.4 M A precursor solution was prepared. This precursor solution was sprayed at a rate of 10 mL / min into an RF induction plasma flame using a two-fluid nozzle and thermally decomposed to obtain inorganic powder particles (raw material particles). The obtained raw material particles were analyzed by an X-ray diffraction method, and showed an amorphous phase and a mixed phase of YAP (YAlO ₃ ) crystals. The average particle size determined by the BET (specific surface area measurement) method was about 75 nm. Next, the obtained raw material particles were put in an alumina crucible and pre-baked in an electric furnace at 1200 ° C. for 2 hours to obtain a YAG: Ce phosphor. The obtained YAG: Ce phosphor showed a single phase with a crystal phase of YAG, and the average particle size determined by the BET method was about 95 nm.

Example 1
<Resin layer A>
In a container equipped with a stirrer, reflux condenser, and nitrogen introduction tube, 0.2 mol of both-end silanol type silicone oil (manufactured by Shin-Etsu Chemical Co., Ltd., trade name “KF-9701”, dimethylsiloxane skeleton derivative), and aluminum isopropoxide 40.2 mol was added and stirred and mixed at room temperature (25 ° C.) for 24 hours. Thereafter, the obtained mixture was centrifuged to remove insoluble matters, and concentrated under reduced pressure (4.0 kPa) at 50 ° C. for 2 hours to obtain polyaluminosiloxane oil. To 100 parts by weight of the resulting polyaluminosiloxane oil, 10 parts by weight of an epoxy type silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-403) was added, and the mixture was added at 80 ° C. under reduced pressure (4.0 kPa). Stirring for a minute gave a silicone resin solution. The obtained silicone resin solution was applied to a thickness of 300 μm on a biaxially stretched polyester film (Mitsubishi Chemical Polyester, 50 μm) and dried at 100 ° C. for 10 minutes to obtain a resin layer A (thickness). 300μm).

<Resin layer B>
(Preparation of inorganic phosphor plate)
YAG: Ce phosphor (average particle size 95 nm) 4 g, poly (vinyl butyl-co-vinyl alcohol-co-vinyl alcohol) (Sigma Aldrich, weight average molecular weight 90000-120000) 0.21 g, silica powder (Cabot Corporation) Manufactured by trade name “CAB-O-SIL HS-5”) and 12 mL of methanol were mixed to obtain a slurry, and the resulting slurry was dried with methanol removed by a dryer. After filling this powder into a 3mm diameter mold, pellets were produced by pressing with a hydraulic press at 4000 pounds, and the resulting pellets were heated in a box electric furnace at 1500 ° C for 5 hours to obtain a flat area of 7.1 A ceramic plate of mm ² and a thickness of 150 μm YAG phosphor was obtained.

(Coating of phosphor plate)
Next, the phosphor ceramic plate obtained above is placed on a biaxially stretched polyester film (Mitsubishi Chemical Polyester Co., Ltd., 50 μm), and a resin component having the same composition as that of the resin layer A is placed on the phosphor plate. Regardless of the presence or absence, the biaxially stretched polyester film was uniformly coated to a thickness of 200 μm and dried at 100 ° C. for 10 minutes to obtain a resin layer B on which a phosphor ceramic plate was arranged. (Thickness 200μm).

<Sheet molding>
The resin layer A and the resin layer B obtained above were laminated and laminated so that the phosphor plate was sandwiched between the resin components, to obtain a semiconductor sealing sheet A (thickness 500 μm).

Comparative Example 1
100 parts by weight of a silicone resin solution prepared in the same manner as in the resin layer A of Example 1 and 7 parts by weight of a YAG phosphor (manufactured by Nemoto Special Chemical Co., Ltd., average particle size 5 μm) are stirred and mixed to obtain a phosphor dispersion. It was. The obtained phosphor dispersion liquid was applied to a thickness of 500 μm on a biaxially stretched polyester film (Mitsubishi Chemical Polyester Co., Ltd., 50 μm) and dried at 100 ° C. for 10 minutes. A stopping sheet B was obtained (thickness: 500 μm).

Next, after removing the biaxially stretched polyester film from the semiconductor sealing sheet obtained above, an example was applied to the surface-mounted blue LED element (LED element cross-sectional area 1 mm ² ) and the substrate. The sheet 1 was laminated with the resin layer A, and the sheet of Comparative Example 1 was laminated so that either side of the sheet was in contact with the substrate, and sealed by heating at 150 ° C. for 5 minutes to produce a semiconductor device. In the semiconductor device using the sheet of Example 1, the vertical distance from the sheet interface of the LED element to the phosphor plate was 250 μm, and the plane area of the phosphor plate was 7.1 times the LED element cross-sectional area.

  About the obtained semiconductor device, according to the following test examples 1-2, the characteristic was evaluated. The results are shown in Table 1.

Test example 1 (illuminance)
The illuminance (lx) at a position 50 cm away from each semiconductor device was measured with an illuminometer while a current of 350 mA was passed through each semiconductor device to light the element. In addition, it shows that a brightness | luminance is so high that illumination intensity is high.

Test example 2 (chromaticity)
During the test of Test Example 1, CIE coordinates were measured based on the CIE chromaticity index.

  As a result, it can be seen that the sheet of the example can maintain the brightness of the apparatus higher than that of the comparative example.

  The optical semiconductor sealing sheet of the present invention is suitably used, for example, when manufacturing semiconductor elements such as a backlight of a liquid crystal screen, a traffic light, an outdoor large display, and an advertising billboard.

FIG. 1 is a view showing an example in which an LED element is encapsulated using the optical semiconductor encapsulating sheet of the present invention.

Explanation of symbols

1 Resin layer A
2 Resin layer B
3 Inorganic phosphor plate 4 LED element 5 Substrate

Claims (5)

An optical semiconductor sealing sheet in which a resin layer B is laminated directly or indirectly on a resin layer A in which an optical semiconductor element can be embedded, and the resin layer B is filled with an inorganic phosphor plate. A semiconductor sealing sheet , wherein the inorganic phosphor is at least one phosphor fine particle selected from the group consisting of a YAG phosphor, a SiAlON phosphor, and a SrBaSiO ₄ phosphor Sheet.   The sheet for sealing an optical semiconductor according to claim 1, wherein the inorganic phosphor plate is obtained by sintering phosphor fine particles having an average particle diameter of less than 1 μm. The sheet | seat for optical semiconductor sealing of Claim 1 or 2 whose thickness of the plate of an inorganic fluorescent substance is 20-500 micrometers. By encapsulating in claim 1-3 for optical-semiconductor encapsulation sheet according to any one, the optical semiconductor device. The manufacturing method of an optical semiconductor device which seals a semiconductor device using the sheet | seat for optical semiconductor sealing in any one of Claims 1-3 .

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