CN104409612A - Inorganic packaging method of quantum-point-based white-light LED device - Google Patents
Inorganic packaging method of quantum-point-based white-light LED device Download PDFInfo
- Publication number
- CN104409612A CN104409612A CN201410604606.6A CN201410604606A CN104409612A CN 104409612 A CN104409612 A CN 104409612A CN 201410604606 A CN201410604606 A CN 201410604606A CN 104409612 A CN104409612 A CN 104409612A
- Authority
- CN
- China
- Prior art keywords
- quantum dot
- inorganic
- light led
- silicon dioxide
- white light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 title abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims abstract description 15
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000003292 glue Substances 0.000 claims abstract description 10
- 238000003756 stirring Methods 0.000 claims abstract description 7
- 239000000243 solution Substances 0.000 claims abstract description 6
- 238000007711 solidification Methods 0.000 claims abstract description 5
- 230000008023 solidification Effects 0.000 claims abstract description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 4
- 238000001914 filtration Methods 0.000 claims abstract description 4
- 239000002096 quantum dot Substances 0.000 claims description 36
- 235000012239 silicon dioxide Nutrition 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000003921 oil Substances 0.000 claims description 3
- 239000011856 silicon-based particle Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000009849 vacuum degassing Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000009790 rate-determining step (RDS) Methods 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 abstract description 8
- 229910002027 silica gel Inorganic materials 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000002834 transmittance Methods 0.000 abstract description 5
- 239000003822 epoxy resin Substances 0.000 abstract description 4
- 229920000647 polyepoxide Polymers 0.000 abstract description 4
- 239000011259 mixed solution Substances 0.000 abstract description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000693 micelle Substances 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 7
- 239000000499 gel Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000008346 aqueous phase Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 208000007578 phototoxic dermatitis Diseases 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Silicon Compounds (AREA)
Abstract
The invention relates to an inorganic packaging method of a quantum-point-based white-light LED device. The inorganic packaging method is characterized in that the method comprises the following steps: step one, preparing inorganic silica sol; to be specific, adding ammoniacal liquor into a mixed solution with TEOS, H2O and glycerol, controlling the pH value of the solution to be between 9.5 to 10; after carrying out stirring fully, adding a few PVA water solution, and then carrying out stirring for 1.5 hours, carrying out filtering by using a piece of low-speed filter paper to obtain a granular silica micelle sol, and carrying out curing for one week at the temperature of 40 DEG C to obtain silica sol with high concentration; step two, carrying out inorganic packaging including die bonding, wire welding, dispensing, lens covering, and glue injection and solidification. According to the invention, with the method, the traditional epoxy resin and silica gel packaging methods can be improved conveniently and effectively; and the light transmittance of the white-light LED device can be improved beneficially. The manufacturing process is simple; the efficiency is high; the cost is low; and the quantum-point-based white-light LED device can be applied widely.
Description
Technical field
The present invention relates to the inorganic encapsulated method of the white light LED part based on quantum dot; The method is conducive to the light transmittance improving white light LED part, and manufacture craft is simple, efficiency is high, cost is low; Make the white light LED part application based on quantum dot more extensive.
Background technology
White light LEDs as a kind of novel solid cold light source, have low threshold voltage, high brightness, long-life, compact conformation, volume little, lightweight, respond the advantages such as fast and radiationless, be called as forth generation lighting source.LED manufacturing process is generally divided into preceding working procedure (chip manufacturing) and later process (encapsulation).Wherein, LED directly can have influence on serviceability and the life-span of LED.There is to realize LED the advantage of long-life and specular removal, more light must be drawn from LED chip in this link of encapsulation, and the heat dissipation design passed through controls working junction temperature.
The encapsulating material that current white light LED part encapsulation is commonly used is epoxy resin and silica gel.Although epoxy resin has the advantages such as good dielectricity, cohesiveness, the raising required along with encapsulation, epoxy resin presents inferior position gradually as encapsulating material, as solidify rear internal stress greatly, not mechanical resistant impact, poor heat resistance etc.Equally, silica gel is as encapsulating material, there is splendid absorbing, resiliency and the advantage such as good thermal endurance, uvioresistant photosensitiveness, but silica gel performance is influenced by environmental temperature, along with temperature raises, the thermal stress of silica gel inside strengthens, and causes the refractive index of silica gel to reduce, thus affects LED light effect and light distribution.Use during silica gel packaging and need solidification ~ 2h under 150 DEG C of conditions, quantum dot is fragile, and quantum yield declines a lot.Use organic silica gel light transmittance not to be very high, light can not be made effectively to emit, and this is by limited for the application making quantum dot in white light LEDs.
Under comparing, inorganic silicon dioxide colloidal sol makes simple, and convenient storage, light transmission is good.Encapsulation process is simple, and mix with water-soluble quantum dot, condition of cure is not harsh, and the light efficiency of quantum dot is protected, and this is by wider for the application making quantum dot in white light LEDs.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of inorganic encapsulated method that can shorten packaging time, reduce packaging cost, improve the light transmittance of white light LED part.
Technical scheme: for solving the problems of the technologies described above, the inorganic encapsulated method of the white light LED part based on quantum dot provided by the invention, after described inorganic silicon dioxide colloidal sol preparation, mixes with water-based quantum dot and obtains white light LED part.
Comprise the steps:
(1) inorganic silicon dioxide colloidal sol is prepared:
(11) by TEOS, H
2o and glycerol are added in reaction vessel, fully mix;
(12) add ammoniacal liquor, in rate-determining steps (11), the pH of solution is at 9.5 – 10;
(13) add a small amount of PVA aqueous solution to stir after 1.5h, obtain granulated silica silicon particle colloidal sol by Filter paper filtering at a slow speed, at 40 DEG C of temperature, one week of slaking obtains the larger silicon dioxide gel of concentration;
(2) inorganic encapsulated:
(21) die bond: the place point silver slurry wanting die bond on support, then chip placement, toasts 2h at 150 DEG C;
(22) bonding wire: chip electrode is connected with support with spun gold;
(23) put glue: fully mixed for 1:5 in mass ratio by inorganic silicon dioxide colloidal sol prepared by water-based quantum dot and step (1), vacuum degassing 30min, some glue, to white light, toasts 30min at 60 DEG C;
(24) lid lens;
(25) encapsulating solidification: inorganic silicon dioxide colloidal sol step (1) prepared loads syringe, props up syringe needle bottom mould inner surface and is injected by glue, toast 1h and encapsulated at 40 DEG C.
Wherein said TEOS, H
2o and NH
3mol ratio be: 5:150.4:0.178.
Wherein said water-based quantum dot by test directly prepare or by oil phase quantum dot by turning water or obtaining at its Surface coating silicon dioxide.
Method for packing of the present invention comprises the preparation process of silicon dioxide gel and the encapsulation step of LED, wherein silicon dioxide gel adopts TEOS hydrolysis to obtain, and forms the packing colloid containing quantum dot after being mixed with water-based quantum dot by the silicon dioxide gel prepared when the encapsulation of LED.Compared with prior art, tool has the following advantages:
Add a small amount of glycerol and PVA when 1, preparing inorganic silicon dioxide colloidal sol and improve film quality for preventing film peeling.The least possiblely when ensureing its viscosity adding organic substance, to obtain inorganic encapsulating material, improving light emission rate and stability.
2, pH value is 9.5 ~ 10, can catalysis TEOS hydrolysis prevent from again forming larger particles, and identical with water-based quantum dot solution pH value, does not affect the character of quantum dot.
3, polymerization reaction 24-36h, reacts completely to make TEOS.
4, one week of slaking makes colloidal sol stickiness increase, to be better used in LED.
5, process of the present invention first prepares silicon dioxide gel, mix with water-based quantum dot again, instead of directly water-based quantum dot is added to hydrolysis in TEOS and obtains, being to ensure that quantum dot is uniformly dispersed like this, there will not be multiple quantum dot to wrap in agglomeration in silica dioxide granule.
6, encapsulating material is inorganic material, makes the application of aqueous phase quantum point in white light LEDs unrestricted, expands the scope of application of quantum dot.
7, inorganic silicon dioxide colloidal sol well can mix with water-based quantum dot, and uniformity ensures that luminescent quality is good.
8, encapsulate condition simple, baking temperature is low, can not destroy the performance of quantum dot, its luminous efficiency is guaranteed, can improves the light efficiency of LED.
The present invention in terms of existing technologies, the inorganic encapsulated method of the white light LED part based on quantum dot of the present invention, can well prepare the white light LED part of full-inorganic, effectively improve its light transmittance, be conducive to the stability improving device, extend the life-span of nanocrystalline photovoltaic device; Manufacture craft of the present invention is simple, efficiency is high, cost is low; Make the white light LED part application based on quantum dot more extensive.
Embodiment
Below in conjunction with one specifically the inorganic encapsulated method of embodiment to the white light LED part that the present invention is based on quantum dot elaborate.
The inorganic encapsulated method that the present invention is based on the white light LED part of quantum dot comprises two large steps:
One, the preparation of inorganic silicon dioxide colloidal sol, concrete grammar is:
Get 10.4g TEOS(0.05mol), join in the mixed solution of 27g deionized water (1.5mol) and 2g glycerol, add ammoniacal liquor and control medium pH at 9.5 – 10, by abundant stirring, TEOS is hydrolyzed, polymerization reaction about 24 – 36h completes.Solution from heterogeneous become the silica particle colloidal sol of homogeneous transparent after, after adding the PVA aqueous solution stirring 1.5h of 2mL 5wt% again, granulated silica silicon particle colloidal sol can be obtained by Filter paper filtering at a slow speed, and then at 40 DEG C of temperature, stir 1 week of evaporation, obtain the silicon dioxide gel that concentration is larger.
Two, the inorganic encapsulated of white light LEDs, concrete grammar is:
(1) die bond: the place point silver slurry wanting die bond on support, then chip placement, toasts 2h at 150 DEG C.
(2) bonding wire: chip electrode is connected with support with spun gold.
(3) put glue: fully mixed for 1:5 in mass ratio with the inorganic silicon dioxide colloidal sol prepared in embodiment one by aqueous phase quantum point, vacuum degassing 30min, some glue, to white light, toasts 30min at 60 DEG C.
(4) lid lens.
(5) encapsulating solidification: inorganic silicon dioxide colloidal sol step (1) prepared loads syringe, props up syringe needle bottom mould inner surface and is injected by glue, toast 1h and encapsulated at 40 DEG C.
The above quantum dot is aqueous phase, if oil phase quantum dot is by turning water or implementing at Surface coating silicon dioxide.Be noted that for those skilled in the art, under the premise without departing from the principles of the invention, can also make some improvement, these improvement also should be considered as protection scope of the present invention.
Claims (3)
1., based on an inorganic encapsulated method for the white light LED part of quantum dot, it is characterized in that: comprise the steps:
(1) inorganic silicon dioxide colloidal sol is prepared:
(11) by TEOS, H
2o and glycerol are added in reaction vessel, fully mix;
(12) add ammoniacal liquor, in rate-determining steps (11), the pH of solution is at 9.5 – 10;
(13) add a small amount of PVA aqueous solution to stir after 1.5h, obtain granulated silica silicon particle colloidal sol by Filter paper filtering at a slow speed, at 40 DEG C of temperature, one week of slaking obtains the larger silicon dioxide gel of concentration;
(2) inorganic encapsulated:
(21) die bond: the place point silver slurry wanting die bond on support, then chip placement, toasts 2h at 150 DEG C;
(22) bonding wire: chip electrode is connected with support with spun gold;
(23) put glue: fully mixed for 1:5 in mass ratio by inorganic silicon dioxide colloidal sol prepared by water-based quantum dot and step (1), vacuum degassing 30min, some glue, to white light, toasts 30min at 60 DEG C;
(24) lid lens;
(25) encapsulating solidification: inorganic silicon dioxide colloidal sol step (1) prepared loads syringe, props up syringe needle bottom mould inner surface and is injected by glue, toast 1h and encapsulated at 40 DEG C.
2. the inorganic encapsulated method of the white light LED part based on quantum dot according to claim 1, is characterized in that: TEOS, H
2o and NH
3mol ratio be: 5:150.4:0.178.
3. the inorganic encapsulated method of the white light LED part based on quantum dot according to claim 1, is characterized in that: described water-based quantum dot directly prepares by testing, by oil phase quantum dot by turning water or obtaining at its Surface coating silicon dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410604606.6A CN104409612B (en) | 2014-11-03 | 2014-11-03 | The inorganic encapsulated method of the white light LED part based on quantum dot |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410604606.6A CN104409612B (en) | 2014-11-03 | 2014-11-03 | The inorganic encapsulated method of the white light LED part based on quantum dot |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104409612A true CN104409612A (en) | 2015-03-11 |
| CN104409612B CN104409612B (en) | 2017-06-16 |
Family
ID=52647224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410604606.6A Expired - Fee Related CN104409612B (en) | 2014-11-03 | 2014-11-03 | The inorganic encapsulated method of the white light LED part based on quantum dot |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104409612B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104726030A (en) * | 2015-04-03 | 2015-06-24 | 叶峰 | Welding mud for novel high temperature resistant insulation lamp as well as preparation method and application of welding mud |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012103159A1 (en) * | 2012-04-12 | 2013-10-17 | Osram Opto Semiconductors Gmbh | Radiation emitting device, transparent material and filler particles and their production process |
| CN103378270B (en) * | 2012-04-25 | 2016-03-02 | 比亚迪股份有限公司 | A kind of preparation method of LED component and LED component |
| CN102983250B (en) * | 2012-12-20 | 2016-01-20 | 纳晶科技股份有限公司 | Silica-gel lens and preparation method thereof, containing its LED |
| CN103354267A (en) * | 2013-07-11 | 2013-10-16 | 安徽科发信息科技有限公司 | Packaging method for white LED (Light-Emitting Diode) light source |
-
2014
- 2014-11-03 CN CN201410604606.6A patent/CN104409612B/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104726030A (en) * | 2015-04-03 | 2015-06-24 | 叶峰 | Welding mud for novel high temperature resistant insulation lamp as well as preparation method and application of welding mud |
| CN104726030B (en) * | 2015-04-03 | 2016-11-23 | 叶峰 | A kind of high-temperature insulation lamp weldering mud and its preparation method and application |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104409612B (en) | 2017-06-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107123725B (en) | Quantum dot film, quantum spot white light LED and its packaging method | |
| CN101714598A (en) | Method for layering and precipitating fluorescent powder in packaging process of white LED | |
| CN103560202B (en) | A kind of white LED lamp and preparation method thereof | |
| CN100565000C (en) | Utilize the YAG crystalline ceramics to prepare the method for white light LEDs | |
| CN102237475A (en) | LED wafer level fluorescent powder coating technology based on organic colloid | |
| CN105070816B (en) | A kind of LED fluorescent powder film slurries | |
| CN102079978B (en) | Preparation method of quantum dot nano material and method for coating silicon dioxide on surface of quantum dot nano material | |
| CN108091752A (en) | A kind of white light LEDs and preparation method thereof | |
| CN102709448A (en) | White light LED packaging structure and method | |
| CN101521257A (en) | White-light LED package structure with prefabricated fluorescent powder film | |
| CN104409612A (en) | Inorganic packaging method of quantum-point-based white-light LED device | |
| CN105006509B (en) | Quantum dot LED encapsulation method and encapsulating structure | |
| CN201336318Y (en) | High-power LED encapsulating structure with high efficiency heat radiation and luminescence | |
| CN101436628A (en) | Technological process for coating fluorescent powder of high-power chip | |
| CN206116449U (en) | White light LED wrapper spare | |
| CN202549918U (en) | Fluorescent powder coating and packaging structure | |
| CN104253199A (en) | A LED package structure and a manufacture method thereof | |
| CN104263304B (en) | A kind of photocuring potting compound and application process | |
| CN106505138A (en) | A kind of LED encapsulation structure and preparation method thereof | |
| CN106356437A (en) | White LED (light emitting diode) packaging device and preparation method thereof | |
| CN102738372A (en) | Novel LED (light emitting diode) integrated light source module and preparation method thereof | |
| CN205231108U (en) | White light LED wafer packaging structure | |
| CN104465965A (en) | Preparation method for fluorescent powder film used for white-light LED wafer level packaging | |
| CN103633230B (en) | A kind of fluorescent material of eliminating white light LED color temperature deviation | |
| CN201812850U (en) | LED (light-emitting diode) packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170616 Termination date: 20201103 |