CN102237475A - LED wafer level fluorescent powder coating technology based on organic colloid - Google Patents
LED wafer level fluorescent powder coating technology based on organic colloid Download PDFInfo
- Publication number
- CN102237475A CN102237475A CN201010166242XA CN201010166242A CN102237475A CN 102237475 A CN102237475 A CN 102237475A CN 201010166242X A CN201010166242X A CN 201010166242XA CN 201010166242 A CN201010166242 A CN 201010166242A CN 102237475 A CN102237475 A CN 102237475A
- Authority
- CN
- China
- Prior art keywords
- organic colloid
- fluorescent
- led
- wafer
- colloid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Led Device Packages (AREA)
Abstract
The invention discloses a power type LED (Light Emitting Diode) wafer level fluorescent powder coating technology based on an organic colloid, comprising the following steps of: (1) coating a pre-costing: coating the organic colloid on the surface of an LED wafer on which wafer fixing and wire soldering have been finished; (2) preparing a fluorescence glue: uniformly mixing the organic colloid and the fluorescence powder according to a proportion and defoaming an obtained mixture in a vacuum state to obtain the fluorescence glue; (3) gluing: filling the fluorescence glue prepared in the step (2) into an LED bracket bowl cup after the wafer fixing and wire soldering have been finished; (4) depositing: standing in a certain environment so that the fluorescence powder is deposited on the cup bottom and the surface of the wafer; (5) switching on a power supply: enabling a constant current to pass through the LED so that the organic colloid on the surface of the wafer is solidified; (6) washing: keeping the organic colloid on the surface of the wafer in the washing liquid, wherein the fluorescence powder is included in the organic colloid; and (7) carrying out post-treatment: heating and sufficiently curing the fluorescence powder layer obtained in the step (6) so that the property of the powder layer is stable. The power type LED wafer level fluorescent powder coating technology based on the organic colloid, disclosed by the invention, has the characteristics of simplicity in operation, high process yield, cost saving and the like.
Description
Technical field
The present invention relates to field of photoelectric technology, be specifically related to a kind of LED wafer scale fluorescent coating technology based on organic colloid.
Background technology
Adopt the MOCVD method from Ri Ya company, success prepared the InGaN blue light and the green light LED of high brightness, thereafter got back since the white light LEDs, through short 10 years of development, the encapsulation technology of LED blue light wafer fabrication and large power white light LED all reaches the practical stage substantially, fields such as that its range of application expands to from traditional indication field is backlight, demonstration, march to lighting field just energetically at present, be intended to replace incandescent lamp, fluorescent lamp and gaseous discharge lamp, become the 4th generation lighting source, make the research of white light LEDs become focus.In April, 2009, the Ministry of Science and Technology agreed that 21 cities comprising Shanghai, Shenzhen carry out semiconductor lighting application project (being called for short " ten thousand in ten cities ") pilot work, and this will promote the research and development of semiconductor lighting industry core technology effectively.
Advantages such as that the used light-emitting diode (LED) of semiconductor lighting has is pollution-free, low-power consumption, highly reliable, long-life, meet the requirement of environmental protection, energy-conservation green illumination light source, countries in the world government and enterprise are all in the development of the upper, middle and lower reaches of actively pushing forward LEDs.
In the LED industry, wafer combined with fluorescent powder is made device and is had a wide range of applications, and at present, an important channel of making white light LEDs is at the suitable yellow fluorescent powder (YAG:Ce of surface-coated one layer thickness of blue-light LED chip
3+), yellow fluorescent powder changes gold-tinted into after absorbing the part blue light that sends from the blue led chip, gold-tinted that produces and remaining blue light form white light by the stack of colour mixture principle, also can make various color LEDs by the mode of wafer combined with fluorescent powder, to satisfy the color demand of different occasions, what the coating method of fluorescent material adopted at present is gluing process, the phosphor powder layer that obtains is in uneven thickness, fluorescent material around the bowl cup has participated in the light conversion, thereby make the homogeneity of LED bright dipping poor, aperture usually occurs, influence the overall performance of device, and because the restriction of spot gluing equipment precision, the optical characteristics consistency of the luminescent device that obtains is bad.For overcoming above-mentioned deficiency, employing forms phosphor powder layer from (self-aligned) mode with (self-exposed) photoresists that expose certainly of arranging at chip surface among the patent US6756186B2, but the non-published technology details.Patent 200710049612.X has adopted the photoresists mode of polyvinyl alcohol (PVA) and ammonium dichromate (ADC) or diazonium compound preparation to obtain the phosphor powder layer of planar structure on the led chip surface.
Summary of the invention
The purpose of this invention is to provide a kind of LED wafer scale fluorescent coating technology, have simple to operate, characteristics such as process rate is high, saving production cost, raising device performance based on organic colloid.This technology goes up big electric current by being loaded into LED, allow LED generate heat, near the wafer surface organic colloid is subjected to hot curing, can not be dissolved in the cleaning fluid, and be dissolved in the cleaning fluid away from the uncured organic colloid of wafer, then on wafer surface, stay organic colloid, wherein comprised the fluorescent material of being prepared.This technology can be made the LED fluorescent material bisque encapsulating structure that only contains organic colloid, obtain the fluorescent material bisque of LED wafer scale, chip and bisque air outside, moisture etc. there is insulating effect, improve the light extraction efficiency of device, simultaneously, the fluorescent material that washes down all around from wafer can reclaim by certain technical process, utilizes again, save production cost, reduce environmental pollution.
Technical problem proposed by the invention is to solve like this: a kind of LED wafer scale fluorescent coating technology based on organic colloid is provided, it is characterized in that, may further comprise the steps:
1. be coated with precoated shet: after organic colloid is prepared, be coated in right amount in the led support bowl cup of having finished behind the solid brilliant bonding wire, make wafer surface that one deck organic colloid be arranged;
2. prepare fluorescent glue: organic colloid (epoxies or silica type) and fluorescent material are mixed in proportion, obtain fluorescent glue after the vacuum defoamation;
3. put glue: with step 2. in the fluorescent glue of preparation be filled in 1. in the bowl cup or finished in the led support bowl cup behind the solid brilliant bonding wire;
4. precipitation: in certain environment, leave standstill, allow fluorescent material in organic colloid, be precipitated to glass at the bottom of and on the wafer surface;
5. energized: by LED, wafer is during by big electric current with a certain size constant-current supply, and temperature raises rapidly, and certain variation takes place near the physicochemical characteristic of the organic colloid the wafer surface;
6. clean: in cleaning fluid, the organic colloid uncured away from wafer is dissolved in cleaning fluid, the organic colloid of the curing on wafer surface can not be dissolved in cleaning fluid and remain, and comprises fluorescent material in the organic colloid, thereby only stayed the fluorescent material bisque on wafer surface;
7. reprocessing: with the fluorescent material bisque heat treated that step obtains in 6., organic colloid wherein fully solidifies, and obtains the fluorescent material bisque that only contains organic colloid of stable performance.
According to a kind of LED wafer scale fluorescent coating technology of the present invention based on organic colloid, it is characterized in that, step is coated with one deck organic colloid in 1. on wafer surface, the mode that applies can adopt rotation gluing method, drip glue method or print process etc., can make its hot curing or directly use, the hot curing condition is: temperature 40-150 ℃, time is 1min-5hrs, this organic colloid can be that silica gel (comprises silicon rubber, silicones, silicon gel etc.) or the epoxies colloid, and this organic colloid precoated shet can not wanted, described LED wafer is luminous can be ultraviolet, the visible light of random color and infrared, support can be any materials, size and shape;
According to a kind of LED wafer scale fluorescent coating technology of the present invention based on organic colloid, it is characterized in that, the organic colloid that step is selected for use in 2. can be the epoxies colloid, it also can be silica type colloid (comprising silicon rubber, silicones, silicon gel etc.), described fluorescent material can be down-conversion fluorescent powder or up-conversion phosphor, comprise in each fluorescent material such as red fluorescence powder, green emitting phosphor, blue colour fluorescent powder, yellow fluorescent powder one or more, fluorescent material can mix with arbitrary proportion with organic colloid;
According to described a kind of LED wafer scale fluorescent coating technology of the present invention based on organic colloid, it is characterized in that the some glue process of step described in 3. can be manual, semi or fully automatic, what of fluorescent glue loading can change as required;
According to described a kind of LED wafer scale fluorescent coating technology of the present invention based on organic colloid, it is characterized in that, the step 4. precipitation environment of middle fluorescent material is temperature 10-90 ℃, humidity is arbitrary value, sedimentation time is 1min-72hrs, for reducing the fluorescent material sedimentation time, improve the precipitation quality, can use sedimentator;
According to described a kind of LED wafer scale fluorescent coating technology of the present invention based on organic colloid, it is characterized in that the step 5. continuous current size of the middle LED that is loaded into is 300-1250mA, be 1s-60min conduction time;
According to described a kind of LED wafer scale fluorescent coating technology of the present invention based on organic colloid, it is characterized in that, the cleaning fluid that step is selected for use in 6. is the organic solvent liquid such as ethers, ketone or methylsiloxane class that contain ehter bond or carbonyl, uncured organic colloid away from wafer is dissolved in the cleaning fluid, stay the organic colloid that has solidified in wafer surface, comprise fluorescent material in the organic colloid;
According to described a kind of LED wafer scale fluorescent coating technology of the present invention based on organic colloid, it is characterized in that, step 7. in the post processing mode of fluorescent material bisque can be in baking box or hot curing on the heater arbitrarily, post-treatment condition was as 150 degree/1 hour.
The present invention utilizes traditional LED encapsulation procedure, improves on traditional some glue mode basis, and then has overcome the deficiency of conventional point glue mode, and a kind of LED wafer scale fluorescent coating technology based on organic colloid is provided.The present invention goes up big electric current by being loaded into LED, allow LED generate heat, near the wafer surface organic colloid is subjected to hot curing, can not be dissolved in the cleaning fluid, and be dissolved in the cleaning fluid away from the uncured organic colloid of wafer, then on wafer surface, stay organic colloid, wherein comprised the fluorescent material of being prepared.Organic liquids such as the discrepant ethers of dissolution characteristics, ketone or methylsiloxane class before and after the cleaning fluid of selecting for use solidifies organic colloid, this technology can be made the LED fluorescent material bisque encapsulating structure that only contains organic colloid, obtain the fluorescent material bisque of LED wafer scale, have simple to operate, characteristics such as process rate is high, saving production cost, raising device performance.
Description of drawings
Fig. 1 is a kind of LED wafer scale fluorescent coating technology schematic diagram based on organic colloid that arrives involved in the present invention.
Wherein Fig. 1 a is for finishing the led support bowl cup schematic diagram of solid brilliant bonding wire.
Fig. 1 b is the schematic diagram behind the some fluorescent glue.
Fig. 1 c is that fluorescent glue leaves standstill a period of time in certain environment, the fluorescent material precipitation.
Fig. 1 d is that LED connects constant-current supply.
Fig. 1 e obtains the fluorescent material bisque of wafer scale for after cleaning.
Respectively be illustrated as among Fig. 1: 1-support, 2-gold thread, 3-wafer, 4-crystal-bonding adhesive, 5-fluorescent glue, 6-constant-current supply, the phosphor powder layer of 7-wafer scale.
Embodiment
The present invention is described in further detail below in conjunction with embodiment.But this should be interpreted as that the scope of the above-mentioned theme of the present invention only limits to following embodiment, allly all belong to scope of the present invention based on the technology that content of the present invention realized.
The present invention is further illustrated below in conjunction with accompanying drawing and embodiment.
Each figure of Fig. 1 is a kind of LED wafer scale fluorescent coating technology implementation step schematic diagram based on organic colloid that arrives involved in the present invention.Fig. 1 a is for finishing the led support bowl cup diagram of solid brilliant bonding wire, on wafer surface, can be coated with one deck organic colloid, can not want this precoated shet directly as next step yet, described wafer is luminous can be the visible light of ultraviolet, random color and infrared, and described support can be any material, size and shape; Fig. 1 b has finished the diagram of a glue, and some glue process can be manual, semi or fully automatic, and what of the proportioning of fluorescent glue and loading can change as required; Fig. 1 c is the schematic diagram of fluorescent material post precipitation, and fluorescent glue leaves standstill a period of time in certain humiture environment, and fluorescent material also can be to quicken precipitation under the sedimentator effect because action of gravity is deposited on the wafer surface and the bottom of support, improves the precipitation quality; Fig. 1 d is that LED connects constant-current supply, the wafer heating, and near the organic colloid wafer surface is subjected to hot curing, and the organic colloid of curing comprises fluorescent material; Fig. 1 e is after cleaning in cleaning fluid, be dissolved in the cleaning agent away from the uncured organic gel of wafer, be subjected to the organic gel of hot curing to be insoluble to cleaning agent, then on the LED wafer surface, stay the organic gel bisque that contains fluorescent material, by the heating reprocessing, make the physical and chemical performance of this organic gel bisque that contains fluorescent material stable.
Embodiment one
The blue-ray LED wafer of 40mil is finished solid brilliant bonding wire on high-power support.
With electronic scale weighing silica gel 2.000g (each 1.000g of silica gel A and B), stir after the also vacuum defoamation, be coated with one deck silica gel with spin-coating method (rotating speed of glue spreader is 2000r/min) in wafer surface, the about 0.5mm of thickness, baking is 1 hour in 100 ℃ baking box.
Mix with silica gel 10.000g (each 5.000g of silica gel A and B) with electronic scale weighing 2.000g yellow fluorescent powder, stir about 15 minutes is confirmed fluorescent material and silica gel and is evenly mixed, vacuum defoamation in vacuum tank then, the deaeration condition is: the about 200Pa of air pressure, the time is 10 minutes, obtains fluorescent glue.
Above-mentioned fluorescent glue is injected in the injector syringe, by the automatically dropping glue system fluorescent glue is packed in the above-mentioned high-power support bowl cup, will prop up and be placed in the sedimentator, setting its rotating speed is 5000r/min, and the time is 300s, allows the fluorescent material precipitation.
Regulate constant-current supply output 750mA, output voltage is 5V, and power positive cathode links to each other with support pin both positive and negative polarity respectively, the continuous current of 750mA flows through LED, time is 5 seconds, and the LED wafer produces a large amount of heats simultaneously luminous, and near the silica gel wafer solidifies owing to being heated.
Get methylsiloxane cleaning fluid 20ml in beaker, be soaked into above-mentioned LED in the cleaning fluid and stirred about 2 minutes, be dissolved in the cleaning fluid, stayed on the wafer surface by the silica gel of hot curing, comprise fluorescent material in the silica gel away from the uncured silica gel of wafer.
Above-mentioned LED semi-finished product are put into baking box, and 150 degree bakings 1 hour make the physical and chemical performance of this silica gel bisque that contains fluorescent material stable.
Embodiment two
The blue-ray LED wafer of 40mil is finished solid brilliant bonding wire on high-power support.
Mix with silica gel 10.000g (each 5.000g of silica gel A and B) with electronic scale weighing 2.000g yellow fluorescent powder, stir about 15 minutes is confirmed fluorescent material and silica gel and is evenly mixed, vacuum defoamation in vacuum tank then, the deaeration condition is: the about 200Pa of air pressure, the time is 10 minutes, obtains fluorescent glue.
Above-mentioned fluorescent glue being injected in the injector syringe, by semi-automatic pneumatic some colloid system fluorescent glue is packed in the above-mentioned high-power support bowl cup, is to leave standstill fluorescent glue 4 hours under 49% the environment in 24.5 ℃ of temperature, relative humidity, allows the fluorescent material precipitation.
Regulate constant-current supply output 500mA, output voltage is 5V, and power positive cathode links to each other with support pin both positive and negative polarity respectively, the continuous current of 500mA flows through LED, time is 12 seconds, and the LED wafer produces a large amount of heats simultaneously luminous, and near the silica gel wafer solidifies owing to being heated.
Get acetone 20ml in beaker, be soaked into above-mentioned LED in the acetone and stirred about 2 minutes, be dissolved in the cleaning fluid, stayed on the wafer surface by the silica gel of hot curing, comprise fluorescent material in the silica gel away from the uncured silica gel of wafer.
Above-mentioned LED semi-finished product are put into baking box, and 150 degree bakings 1 hour make the physical and chemical performance of this silica gel bisque that contains fluorescent material stable.
Claims (8)
1. the invention discloses a kind of LED wafer scale fluorescent coating technology, it is characterized in that, may further comprise the steps based on organic colloid:
1. be coated with precoated shet: after organic colloid is prepared, be coated in right amount in the led support bowl cup of having finished behind the solid brilliant bonding wire, make wafer surface that one deck organic colloid be arranged;
2. prepare fluorescent glue: organic colloid (epoxies or silica type) and fluorescent material are mixed in proportion, obtain fluorescent glue after the vacuum defoamation;
3. put glue: with step 2. in the fluorescent glue of preparation be filled in 1. in the bowl cup or finished in the led support bowl cup behind the solid brilliant bonding wire;
4. precipitation: in certain environment, leave standstill, allow fluorescent material in organic colloid, be precipitated to glass at the bottom of and on the wafer surface;
5. energized: by LED, wafer is during by big electric current with a certain size constant-current supply, and temperature raises rapidly, and certain variation takes place near the physicochemical characteristic of the organic colloid the wafer surface;
6. clean: in cleaning fluid, the organic colloid uncured away from wafer is dissolved in cleaning fluid, the organic colloid of the curing on wafer surface can not be dissolved in cleaning fluid and remain, and comprises fluorescent material in the organic colloid, thereby only stayed the fluorescent material bisque on wafer surface;
7. reprocessing: with the fluorescent material bisque heat treated that step obtains in 6., organic colloid wherein fully solidifies, and obtains the fluorescent material bisque that only contains organic colloid of stable performance.
2. a kind of LED wafer scale fluorescent coating technology according to claim 1 based on organic colloid, it is characterized in that, step is coated with one deck organic colloid in 1. on wafer surface, the mode that applies can adopt rotation gluing method, drip glue method or print process etc., can make its hot curing or directly use, the hot curing condition is: temperature 40-150 ℃, time is 1min-5hrs, this organic colloid can be that silica gel (comprises silicon rubber, silicones, silicon gel etc.) or the epoxies colloid, and this organic colloid precoated shet can not wanted, described LED wafer is luminous can be ultraviolet, the visible light of random color and infrared, support can be any materials, size and shape.
3. a kind of LED wafer scale fluorescent coating technology according to claim 1 based on organic colloid, it is characterized in that, the organic colloid that step is selected for use in 2. can be the epoxies colloid, it also can be silica type colloid (comprising silicon rubber, silicones, silicon gel etc.), described fluorescent material can be down-conversion fluorescent powder or up-conversion phosphor, comprise in each fluorescent material such as red fluorescence powder, green emitting phosphor, blue colour fluorescent powder, yellow fluorescent powder one or more, fluorescent material can mix with arbitrary proportion with organic colloid.
4. a kind of LED wafer scale fluorescent coating technology based on organic colloid according to claim 1 is characterized in that, the some glue process of step described in 3. can be manual, semi or fully automatic, and what of fluorescent glue loading can change as required.
5. a kind of LED wafer scale fluorescent coating technology according to claim 1 based on organic colloid, it is characterized in that, the step 4. precipitation environment of middle fluorescent material is temperature 10-90 ℃, humidity is arbitrary value, sedimentation time is 1min-72hrs, for reducing the fluorescent material sedimentation time, improve the precipitation quality, can use sedimentator.
6. a kind of LED wafer scale fluorescent coating technology based on organic colloid according to claim 1 is characterized in that, the step 5. continuous current size of the middle LED that is loaded into is 300-1250mA, and be 1s-60min conduction time.
7. a kind of LED wafer scale fluorescent coating technology according to claim 1 based on organic colloid, it is characterized in that, the cleaning fluid that step is selected for use in 6. is the organic solvent liquid such as ethers, ketone or methylsiloxane class that contain ehter bond or carbonyl, uncured organic colloid away from wafer is dissolved in the cleaning fluid, stay the organic colloid that has solidified in wafer surface, comprise fluorescent material in the organic colloid.
8. a kind of LED wafer scale fluorescent coating technology according to claim 1 based on organic colloid, it is characterized in that, step 7. in the post processing mode of fluorescent material bisque can be in baking box or hot curing on the heater arbitrarily, post-treatment condition was as 150 degree/1 hour.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010166242XA CN102237475A (en) | 2010-05-04 | 2010-05-04 | LED wafer level fluorescent powder coating technology based on organic colloid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010166242XA CN102237475A (en) | 2010-05-04 | 2010-05-04 | LED wafer level fluorescent powder coating technology based on organic colloid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102237475A true CN102237475A (en) | 2011-11-09 |
Family
ID=44887909
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010166242XA Pending CN102237475A (en) | 2010-05-04 | 2010-05-04 | LED wafer level fluorescent powder coating technology based on organic colloid |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102237475A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646780A (en) * | 2012-05-10 | 2012-08-22 | 四川恩莱特光电科技有限公司 | Light-emitting diode (LED) based on up-conversion materials and packaging method thereof |
| CN102661541A (en) * | 2012-04-23 | 2012-09-12 | 江阴浩瀚光电科技有限公司 | Light-emitting diode (LED) light engine module |
| CN102983253A (en) * | 2012-12-12 | 2013-03-20 | 南京汉德森科技股份有限公司 | Curing method for LED fluorescent glue |
| CN103000791A (en) * | 2012-12-24 | 2013-03-27 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | Light-emitting diode (LED) packaging structure of dispensing coating long-distance type fluorescent powder and manufacture method |
| CN103178188A (en) * | 2011-12-21 | 2013-06-26 | 四川柏狮光电技术有限公司 | Packaging process of white light light-emitting diode (LED) |
| CN103311406A (en) * | 2013-05-11 | 2013-09-18 | 东莞市中之光电科技有限公司 | Packaging process for white light-emitting diodes (LEDs) |
| CN103441208A (en) * | 2013-09-02 | 2013-12-11 | 厦门华联电子有限公司 | Method for coating quickly-solidified white LED fluorescent glue |
| CN104103737A (en) * | 2013-04-03 | 2014-10-15 | 江苏稳润光电有限公司 | Large-angle and high-cri white light LED and manufacturing method thereof |
| CN104916760A (en) * | 2015-05-08 | 2015-09-16 | 李峰 | Die cavity type adhesive film making method and adhesive film made by same |
| CN108447960A (en) * | 2018-02-09 | 2018-08-24 | 永林电子有限公司 | A kind of the centrifugation production method and its LED lamp bead of LED lamp bead |
| CN109713113A (en) * | 2018-12-10 | 2019-05-03 | 深圳市立洋光电子股份有限公司 | A kind of packaging method and its application in COBLED encapsulation field |
| CN109817789A (en) * | 2018-12-25 | 2019-05-28 | 广州硅能照明有限公司 | A kind of COB encapsulation and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1455960A (en) * | 2001-01-24 | 2003-11-12 | 日亚化学工业株式会社 | Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
| CN1547265A (en) * | 2003-12-10 | 2004-11-17 | 玄基光电半导体股份有限公司 | Packaging structure of LED and packaging method thereof |
| CN101567410A (en) * | 2009-02-05 | 2009-10-28 | 郑榕彬 | Method for encapsulating LED chip |
| CN101582477A (en) * | 2009-06-23 | 2009-11-18 | 中山大学 | Method for actively encapsulating LED chip and encapsulation structure thereof |
-
2010
- 2010-05-04 CN CN201010166242XA patent/CN102237475A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1455960A (en) * | 2001-01-24 | 2003-11-12 | 日亚化学工业株式会社 | Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
| CN1547265A (en) * | 2003-12-10 | 2004-11-17 | 玄基光电半导体股份有限公司 | Packaging structure of LED and packaging method thereof |
| CN101567410A (en) * | 2009-02-05 | 2009-10-28 | 郑榕彬 | Method for encapsulating LED chip |
| CN101582477A (en) * | 2009-06-23 | 2009-11-18 | 中山大学 | Method for actively encapsulating LED chip and encapsulation structure thereof |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178188A (en) * | 2011-12-21 | 2013-06-26 | 四川柏狮光电技术有限公司 | Packaging process of white light light-emitting diode (LED) |
| CN102661541A (en) * | 2012-04-23 | 2012-09-12 | 江阴浩瀚光电科技有限公司 | Light-emitting diode (LED) light engine module |
| CN102661541B (en) * | 2012-04-23 | 2015-09-09 | 江阴浩瀚光电科技有限公司 | LED light engine module |
| CN102646780A (en) * | 2012-05-10 | 2012-08-22 | 四川恩莱特光电科技有限公司 | Light-emitting diode (LED) based on up-conversion materials and packaging method thereof |
| CN102983253A (en) * | 2012-12-12 | 2013-03-20 | 南京汉德森科技股份有限公司 | Curing method for LED fluorescent glue |
| CN103000791B (en) * | 2012-12-24 | 2015-06-24 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | Light-emitting diode (LED) packaging structure of dispensing coating long-distance type fluorescent powder and manufacture method |
| CN103000791A (en) * | 2012-12-24 | 2013-03-27 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | Light-emitting diode (LED) packaging structure of dispensing coating long-distance type fluorescent powder and manufacture method |
| CN104103737A (en) * | 2013-04-03 | 2014-10-15 | 江苏稳润光电有限公司 | Large-angle and high-cri white light LED and manufacturing method thereof |
| CN103311406A (en) * | 2013-05-11 | 2013-09-18 | 东莞市中之光电科技有限公司 | Packaging process for white light-emitting diodes (LEDs) |
| CN103311406B (en) * | 2013-05-11 | 2015-09-30 | 东莞中之光电股份有限公司 | A kind of packaging technology of white light LEDs |
| CN103441208A (en) * | 2013-09-02 | 2013-12-11 | 厦门华联电子有限公司 | Method for coating quickly-solidified white LED fluorescent glue |
| CN103441208B (en) * | 2013-09-02 | 2015-10-14 | 厦门华联电子有限公司 | Quick-setting white-light LED fluorescence glue painting method |
| CN104916760A (en) * | 2015-05-08 | 2015-09-16 | 李峰 | Die cavity type adhesive film making method and adhesive film made by same |
| CN108447960A (en) * | 2018-02-09 | 2018-08-24 | 永林电子有限公司 | A kind of the centrifugation production method and its LED lamp bead of LED lamp bead |
| CN109713113A (en) * | 2018-12-10 | 2019-05-03 | 深圳市立洋光电子股份有限公司 | A kind of packaging method and its application in COBLED encapsulation field |
| CN109817789A (en) * | 2018-12-25 | 2019-05-28 | 广州硅能照明有限公司 | A kind of COB encapsulation and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102237475A (en) | LED wafer level fluorescent powder coating technology based on organic colloid | |
| CN103131190B (en) | Double-component self-molding lens silica gel for light-emitting diode (LED) package and package process of double-component self-molding lens silica gel | |
| CN102723424B (en) | Method for preparing fluorescent wafer for LED (light-emitting diode) | |
| CN101714598A (en) | Method for layering and precipitating fluorescent powder in packaging process of white LED | |
| CN101656290A (en) | Process for encapsulating light-emitting diode | |
| CN101704988A (en) | Method for preparing fluorescent powder colloid | |
| CN101521257B (en) | Prefabricated fluorescent powder film type white light LED packaging structure and preparation method thereof | |
| CN104993037A (en) | Light emitting diode, encapsulation structure thereof, encapsulation method thereof and display device | |
| CN102437255A (en) | Fluorescent chip for white light LED (light-emitting diode) prepared by spinning coating process | |
| CN105633248B (en) | LED lamp and preparation method thereof | |
| CN109742220B (en) | White light LED containing liquid quantum dots and preparation method thereof | |
| CN102709448A (en) | White light LED packaging structure and method | |
| CN101887941A (en) | Preparation method of LED phosphor layer | |
| CN106601897A (en) | Method for manufacturing chip on board (COB) light source with white adhesive surface package | |
| CN103258936B (en) | A kind of LED package substrate and the method for shape-preserving coating | |
| CN103131191B (en) | Single-component self-molding lens silica gel for light-emitting diode (LED) package and package process of single-component self-molding lens silica gel | |
| CN106159060A (en) | A kind of LED packaging technology | |
| CN104600179A (en) | LED fluorescent powder layer with conformal-remote structure and preparation method | |
| CN103500786B (en) | The LED/light source of a kind of full angle luminescence and its preparation method | |
| CN105322071B (en) | A kind of chip-scale white light LEDs and preparation method thereof | |
| CN203205458U (en) | LED package substrate | |
| CN102709412A (en) | Method for manufacturing high-brightness low-attenuation LEDs | |
| CN102005532A (en) | High-efficiency reflective LED package structure and packaging method thereof | |
| CN107763568A (en) | A kind of preparation method on LED remote excitation phosphor powder layers | |
| CN205282499U (en) | Pottery fluorescence base plate and illuminator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111109 |