CN1547265A - Packaging structure of LED and packaging method thereof - Google Patents
Packaging structure of LED and packaging method thereof Download PDFInfo
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- CN1547265A CN1547265A CNA2003101202727A CN200310120272A CN1547265A CN 1547265 A CN1547265 A CN 1547265A CN A2003101202727 A CNA2003101202727 A CN A2003101202727A CN 200310120272 A CN200310120272 A CN 200310120272A CN 1547265 A CN1547265 A CN 1547265A
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Abstract
The invention provides a packaging structure and the method for a kind of illuminant diode, it uses the liquid phosphorus light agent glue as material, and uses the model-casting and forming method to carry on package, in the packaging process, the glue solvent is saturate and the solid phosphorus light agent is deposited, thus, a phosphorus light media layer covers the illuminant diode, the phosphorus media layer contains a packaging glue and a phosphorus light agent layer, the phosphorus light agent are coated on the illuminant diode. The invention can realize the low color leakage rate effect, at the same time, the size is standardized, the white light spectrum is stable, and it can save the materials.
Description
Technical field
The present invention is relevant a kind of light-emitting diode packaging technology, is meant a kind of encapsulating structure and method for packing thereof of white light emitting diode especially.
Background technology
The encapsulation of general light-emitting diode (LED) is to use transfer casting (transfermolding) or aqueous some glue envelope mode only to carry out.The transfer casting is to use the most general processing procedure at present, it is with glutinous printed circuit board (PCB) (the printed circuitboard that is provided with LED wafer and lead, PCB) or sheet metal (metal frame) be placed in earlier the transfer shaping mould blowhole (cavity) in, utilize again and extrude bar (ram) the solid-state granular epoxy resin pressure injection of pre-thermal softening is gone into to transfer in the blowhole of mould, make the epoxy resin raw material produce sclerous reaction through heating, promptly finish mould envelope program, then cutting singly becomes a plurality of LED potted elements again.Yet, for small size LED product,, make wastage of material a lot of in this groove, and have the shortcoming that wastes raw material because the feedstock delivery groove of transfer casting processing procedure is very long; Moreover, in the process of filling the mold raw material, must accurately control pressure and the raw material flowing velocity that extrudes bar, then easily overwhelm lead or cause short circuit if control is improper, have the processing procedure complexity and uppity shortcoming.
And aqueous glue envelope only is to use normal temperature to be aqueous envelope to end (encapsulation) material, utilize point gum machine drop epoxy resin on the LED substrate, through the baking of heating a gelling is consolidated and moulding again, though ending processing, aqueous some glue envelope do not need mould, has the simple and easy and cheap advantage of processing, but, therefore more do not popularize because the colloid solidified surface is wayward and output efficiency seals processing procedure far away from mould.
On the other hand, when making the white light LEDs potted element, the raw material that transfer casting method and some glue envelope are ended method is to use respectively solid-stately to contain phosphor epoxy resin and liquid state contains phosphor epoxy resin, no matter but be to adopt which kind of method to encapsulate, last encapsulating structure all is that a substrate 10 is provided with a LED crystal grain 12, and the mixed layer 14 of a topped phosphor and epoxy resin on LED crystal grain 12, as shown in Figure 1, because phosphorescent particle 16 is to be dispersed in the epoxy resin 18 but not to be coated on thick and fast on the LED crystal grain 12, so the photochromic leak rate of LED crystal grain 12 is higher.
Therefore, The present invention be directed to above-mentioned variety of problems, propose a kind of package structure for LED and method for packing thereof, effectively to overcome these known shortcomings.
Summary of the invention
Main purpose of the present invention, be that a kind of package structure for LED and method are being provided, contain the use of phosphor colloid by liquid state, in internal mold, allow hall, phosphor Shen topped on LED crystal grain, with the photochromic leak rate of effective reduction LED, and then improve known phosphorescent particle to be dispersed in the packing colloid and have the high shortcoming of light leak rate.
Another object of the present invention, be that a kind of light emitter diode seal method is being provided, it is to use injection molding mould envelope LED, to mould the LED element of fixed size, and then provide spectral region stable white light LEDs, to solve the wayward and spectral shift problem of deriving of known package dimension, so have the luminous photochromic effect accurately of the white light LEDs of making.
Another purpose of the present invention is that a kind of light emitter diode seal method is being provided, and has the advantage that size block is formatted, yield high and be applicable to making large scale external mold product.
A further object of the present invention, the method for packing that provides a kind of fully practicality encapsulation raw material be reached the effect of conservation, and then can effectively reduce packaging cost.
For reaching above-mentioned purpose, a kind of package structure for LED of the present invention is characterized in that, comprising:
One substrate;
One light emitting diode, it is arranged on this substrate; And
One phosphorescence dielectric layer, it is arranged on this substrate and clads this light emitting diode, wherein this phosphorescence dielectric layer comprises a packing colloid, and in this packing colloid bottom precipitation the one phosphor beds of precipitation is arranged, and makes these phosphor beds of precipitation closely topped on this light emitting diode.
Wherein, this packing colloid is to be epoxy resin.
It is for sending white light.
Wherein, outside this phosphorescence dielectric layer also cladding one outer enclosure colloid arranged.
A kind of LED encapsulation method of the present invention is characterized in that, comprises the following steps:
One substrate and a mold are provided, and are that plural light emitting diode is installed on this substrate, and this mold inside is to be concaved with corresponding these light emitting diodes of a plurality of forming units;
This substrate is inserted this mold inside, make corresponding these forming units of these light emitting diodes, and this mold that locks;
One liquid state is contained the phosphor colloid to be inserted in this mold and fills up these forming units; And
Make this phosphor in this colloid be deposited in supreme and this liquid state of hardening of these light-emitting diode lists and contain the phosphor colloid, and then obtain a die casting substrate.
Wherein, before this contains the step of phosphor colloid behind this mold of locking and in filling, also comprising a step, is with this mold preheating.
Wherein, the step that precipitates this phosphor is that to make this contain the phosphor colloid saturated and make this phosphor precipitation.
Wherein, the mode that this liquid state of hardening contains the phosphor colloid is after this phosphor precipitation, heats this liquid state and contains the phosphor colloid, makes liquid colloid partly produce curing reaction.
Wherein, this mold is made up of two molds, and a mould is to be concaved with these forming units with respect to the inner surface of another mould therein.
Wherein, after making obtains this die casting substrate, also can utilize die casting to contain and form an outer enclosure colloid outside the phosphor colloid at this that hardens.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with embodiment and accompanying drawing describe in detail the present invention as after, wherein:
Fig. 1 is the structure cutaway view of known white light LEDs potted element.
Fig. 2 is the cutaway view of package structure for LED of the present invention.
Fig. 3 is the local amplification view of Fig. 2.
Fig. 4 is an encapsulation flow chart of the present invention.
Fig. 5 installs schematic diagram in the LED substrate what mold for the present invention.
Fig. 6 A and Fig. 6 B are that the present invention is in the structure cutaway view that carries out saturated coagulation step.
Embodiment
Light-emitting diode of the present invention (LED) mould encapsulation technique is that to contain phosphor (Phosphor) colloid with liquid be mould envelope raw material, utilizes injection molding and solidifies principle based on the solid Shen Dian of hold-up, produces the LED encapsulating structure.
Please join shown in Figure 2, cutaway view for package structure for LED of the present invention, one LED potted element 20 is to comprise a substrate 22, this substrate 22 is generally printed circuit board (PCB) (printedcircuit board, PCB) or metal frame (metal frame), one light-emitting diode (LED) unit is installed on substrate 22, it is to be a LED crystal grain 24, and have a phosphorescence dielectric layer 26 to be coated on the substrate 22 to clad this LED crystal grain 24, other has an outer enclosure colloid 32 claddings outside phosphorescence dielectric layer 26; Wherein this phosphorescence dielectric layer 26 as shown in Figure 3, be to comprise a packing colloid 28, and the one phosphor beds of precipitation 30 are arranged in packing colloid 28 bottom precipitations, it is closely topped on LED unit 24 making the phosphor beds of precipitation 30, the material dust head of this packing colloid 28 and outer enclosure colloid 32 is epoxy resin (epoxy), the phosphor beds of precipitation then are made up of the phosphorus particulate, send white light to utilize phosphorus particulate and fixed frequency luminous element issued light to reflect mutually.
Be different from known technology phosphorescent particle is dispersed in the structure and the practice in the packing colloid, the present invention is by phosphor being deposited in the packing colloid bottom, make phosphorescent particle closely arrange and be coated on thick and fast on the LED unit 12 with this, and then can effectively reduce the photochromic leak rate of LED unit 12, improve the high problem of the photochromic leak rate of known structure.
After understanding encapsulating structure of the present invention, continue and use die casting and hold-up to solidify the method that principle is made this encapsulating structure describing the present invention in detail, see also shown in Figure 4ly, be to be encapsulation flow chart of the present invention.Above-mentioned light emitter diode seal method is to comprise the following steps: at first, and a LED substrate, a mold and mould envelope raw material is provided shown in step S10, and wherein this LED substrate is for plural LED crystal grain is installed, and these LED crystal grain are to be electrically connected on the substrate; And this mold as shown in Figure 5, form by two upper and lower moulds 34,34 ' institute, and is to be concaved with forming units 36 such as a plurality of at bed die 34 ' with respect to the inner surface of mold 34, each waits forming unit 36 is each LED product grain on the corresponding LED substrate: it then is one to contain the phosphor colloid that mould seals raw material, it is evenly mixed and is formed by phosphor and packing colloid, this packing colloid normally is an epoxy resin, and phosphor normally is the phosphorus particulate.
After being ready for LED substrate, mold and mould envelope raw material, then shown in step S12, please cooperate Fig. 5 simultaneously, earlier spray mould oil respectively at upper and lower mould 34,34 ' two relative inner surfaces, the surface that again LED substrate 38 is had LED crystal grain is placed in the groove 49 of bed die 34 ' down and with it, make these forming units 36 of the corresponding bed die 34 ' of these LED crystal grain, then soon locking locks together upper and lower mould 34,34 '.
After this mold of locking, promptly shown in step S14, earlier mold is preheated to a proper temperature, next, just carry out step S16, to fill in mold via the filling runner 42 of mold inner and fill up these forming units 36 with the phosphor colloid that contains of a liquid state, afterwards and as the step S18, eliminate the step of colloid bubble, this froth breaking step is normally carried out in one automatic vacuum/air pressure baking box, use required tentation data and set different vacuum, air pressure, temperature and in time ask condition, utilize vacuum suction to eliminate bubble in the colloid.
After finishing the froth breaking step, promptly enter step S20, cooperate simultaneously shown in Fig. 6 A and Fig. 6 B, modern this contains phosphor colloid 44 to be become saturation condition and makes phosphor 46 precipitations, and then makes phosphor 46 precipitations that originally are scattered in the colloid and topped on these LED crystal grain 24.Wherein, make and contain phosphor colloid 44 and be saturated method and be to use certain temperature and make the phosphorus particulate that contains in the phosphor colloid 44 descend, and then utilize force of gravity to allow under the phosphorus particulate Shen in glue stocking sole portion and topped on LED crystal grain 24, and temperature and time is to determine according to containing the colloid concentration of phosphor colloid 44 and phosphorus density of particle, and the size dimension that must consider the mobile groove of mold in the lump decides.
Then, shown in step S22, heat this liquid state and contain the phosphor colloid, make liquid colloid partly produce curing reaction (curing) and harden, finish solidify the colloid step after, can open mold, shown in step S24, internal mold encapsulated LED substrate is finished in taking-up, and cleans the mould oil on the LED substrate, can obtain mould envelope LED substrate.
After making obtains this mould envelope LED substrate, also can be shown in step S26, carry out the external mold packaging operation, it is to utilize aforementioned die casting to form an outer enclosure colloid outside the phosphor colloid again in containing of having hardened, its method for packing is to be similar to above-mentioned steps S10 to S24, not existing together is the settling step that province removes step S20, and the outer enclosure colloid is a single-phase liquid, and the dust head is an epoxy resin.
At last, after the internal mold of finishing the LED substrate and external mold encapsulation, promptly shown in step S28, with each LED crystal grain is that single job is cut by unit, the LED substrate cut of envelope mould is divided into a plurality of LED potted elements, so complete encapsulation flow process, and then obtain a LED potted element with phosphorescent layer.
In method for packing of the present invention, because mold is to have certain dimensions, so can mould the LED product of fixed size, and white light LEDs needs the white light that a specific size could produce a special spectrum, therefore the present invention can effectively solve the uppity problem of known package size, and improve the product yield, and be more suitable for making the product of large scale external mold simultaneously, have that size block is formatted and luminous photochromic advantage accurately.On the other hand, because the present invention gives up known transfer casting method, expect 99% degree so fully practicality is former, change Tool and Die Technology than known use and have more raw material utility ratio more than 30% approximately, effect with conservation, and then can effectively reduce packaging cost.
The above is by embodiment characteristics of the present invention to be described, its purpose is had the knack of this operator and can be understood content of the present invention and implement according to this making, and non-limiting claim of the present invention, so, all other do not break away from equivalence modification or the modification that disclosed spirit is finished, and must be included in the claim of the following stated.
Claims (10)
1. a package structure for LED is characterized in that, comprising:
One substrate;
One light emitting diode, it is arranged on this substrate; And
One phosphorescence dielectric layer, it is arranged on this substrate and clads this light emitting diode, wherein this phosphorescence dielectric layer comprises a packing colloid, and in this packing colloid bottom precipitation the one phosphor beds of precipitation is arranged, and makes these phosphor beds of precipitation closely topped on this light emitting diode.
2. package structure for LED as claimed in claim 1 is characterized in that, wherein, this packing colloid is to be epoxy resin.
3. package structure for LED as claimed in claim 1 is characterized in that, it is for sending white light.
4. package structure for LED as claimed in claim 1 is characterized in that, wherein, also cladding has an outer enclosure colloid outside this phosphorescence dielectric layer.
5. a LED encapsulation method is characterized in that, comprises the following steps:
One substrate and a mold are provided, and are that plural light emitting diode is installed on this substrate, and this mold inside is to be concaved with corresponding these light emitting diodes of a plurality of forming units;
This substrate is inserted this mold inside, make corresponding these forming units of these light emitting diodes, and this mold that locks;
One liquid state is contained the phosphor colloid to be inserted in this mold and fills up these forming units; And
Make this phosphor in this colloid be deposited in supreme and this liquid state of hardening of these light-emitting diode lists and contain the phosphor colloid, and then obtain a die casting substrate.
6. LED encapsulation method as claimed in claim 5 is characterized in that, wherein, before this contains the step of phosphor colloid behind this mold of locking and in filling, also comprises a step, is with this mold preheating.
7. LED encapsulation method as claimed in claim 5 is characterized in that, wherein, the step that precipitates this phosphor is that to make this contain the phosphor colloid saturated and make this phosphor precipitation.
8. LED encapsulation method as claimed in claim 5 is characterized in that, wherein, the mode that this liquid state of hardening contains the phosphor colloid is after this phosphor precipitation, heats this liquid state and contains the phosphor colloid, makes liquid colloid partly produce curing reaction.
9. LED encapsulation method as claimed in claim 5 is characterized in that, wherein, this mold is made up of two molds, and a mould is to be concaved with these forming units with respect to the inner surface of another mould therein.
10. LED encapsulation method as claimed in claim 5 is characterized in that, wherein, after making obtains this die casting substrate, also can utilize die casting to contain at this that hardens and form an outer enclosure colloid outside the phosphor colloid.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101202727A CN1317775C (en) | 2003-12-10 | 2003-12-10 | Packaging structure of LED and packaging method thereof |
| HK05101285A HK1069014A1 (en) | 2003-12-10 | 2005-02-16 | Package structure of a led and its package method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101202727A CN1317775C (en) | 2003-12-10 | 2003-12-10 | Packaging structure of LED and packaging method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1547265A true CN1547265A (en) | 2004-11-17 |
| CN1317775C CN1317775C (en) | 2007-05-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101202727A Expired - Fee Related CN1317775C (en) | 2003-12-10 | 2003-12-10 | Packaging structure of LED and packaging method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN1317775C (en) |
| HK (1) | HK1069014A1 (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097425A (en) * | 2009-12-09 | 2011-06-15 | 三星Led株式会社 | Light emitting diode, method for fabricating phosphor layer, and lighting apparatus |
| CN102237475A (en) * | 2010-05-04 | 2011-11-09 | 李长会 | LED wafer level fluorescent powder coating technology based on organic colloid |
| CN102456681A (en) * | 2010-10-27 | 2012-05-16 | Lg伊诺特有限公司 | Light emitting module |
| CN101232065B (en) * | 2006-09-01 | 2012-07-04 | 克里公司 | Phosphor position in light emitting diodes |
| US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| US9093616B2 (en) | 2003-09-18 | 2015-07-28 | Cree, Inc. | Molded chip fabrication method and apparatus |
| US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9748449B2 (en) | 2003-07-04 | 2017-08-29 | Epistar Corporation | Optoelectronic system |
| CN110429168A (en) * | 2010-06-21 | 2019-11-08 | 美光科技公司 | Encapsulating light emitting diode and relevant system and method with phosphor film |
| US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6642652B2 (en) * | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
| TW563261B (en) * | 2002-06-07 | 2003-11-21 | Solidlite Corp | A method and of manufacture for tri-color white LED |
-
2003
- 2003-12-10 CN CNB2003101202727A patent/CN1317775C/en not_active Expired - Fee Related
-
2005
- 2005-02-16 HK HK05101285A patent/HK1069014A1/en not_active IP Right Cessation
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9748449B2 (en) | 2003-07-04 | 2017-08-29 | Epistar Corporation | Optoelectronic system |
| US10164158B2 (en) | 2003-09-18 | 2018-12-25 | Cree, Inc. | Molded chip fabrication method and apparatus |
| US9093616B2 (en) | 2003-09-18 | 2015-07-28 | Cree, Inc. | Molded chip fabrication method and apparatus |
| US9105817B2 (en) | 2003-09-18 | 2015-08-11 | Cree, Inc. | Molded chip fabrication method and apparatus |
| US10546978B2 (en) | 2003-09-18 | 2020-01-28 | Cree, Inc. | Molded chip fabrication method and apparatus |
| CN101232065B (en) * | 2006-09-01 | 2012-07-04 | 克里公司 | Phosphor position in light emitting diodes |
| CN102683560A (en) * | 2006-09-01 | 2012-09-19 | 克里公司 | Phosphor position in light emitting diodes |
| CN102683560B (en) * | 2006-09-01 | 2016-01-20 | 克里公司 | Phosphor position in light-emitting diode |
| US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| CN102097425A (en) * | 2009-12-09 | 2011-06-15 | 三星Led株式会社 | Light emitting diode, method for fabricating phosphor layer, and lighting apparatus |
| US8558246B2 (en) | 2009-12-09 | 2013-10-15 | Samsung Electronics Co., Ltd. | Light emitting diode, method for fabricating phosphor layer, and lighting apparatus |
| CN102237475A (en) * | 2010-05-04 | 2011-11-09 | 李长会 | LED wafer level fluorescent powder coating technology based on organic colloid |
| US11901494B2 (en) | 2010-06-21 | 2024-02-13 | Micron Technology, Inc. | Packaged LEDs with phosphor films, and associated systems and methods |
| CN110429168A (en) * | 2010-06-21 | 2019-11-08 | 美光科技公司 | Encapsulating light emitting diode and relevant system and method with phosphor film |
| CN110429168B (en) * | 2010-06-21 | 2022-11-04 | 美光科技公司 | Packaged light emitting diodes with phosphor films and related systems and methods |
| US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
| CN102456681B (en) * | 2010-10-27 | 2016-11-16 | Lg伊诺特有限公司 | Light emitting module |
| CN102456681A (en) * | 2010-10-27 | 2012-05-16 | Lg伊诺特有限公司 | Light emitting module |
Also Published As
| Publication number | Publication date |
|---|---|
| HK1069014A1 (en) | 2005-05-06 |
| CN1317775C (en) | 2007-05-23 |
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