CN102709412A - Method for manufacturing high-brightness low-attenuation LEDs - Google Patents
Method for manufacturing high-brightness low-attenuation LEDs Download PDFInfo
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- CN102709412A CN102709412A CN2012101834849A CN201210183484A CN102709412A CN 102709412 A CN102709412 A CN 102709412A CN 2012101834849 A CN2012101834849 A CN 2012101834849A CN 201210183484 A CN201210183484 A CN 201210183484A CN 102709412 A CN102709412 A CN 102709412A
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Abstract
The invention discloses a method for manufacturing high-brightness low-attenuation LEDs. The method comprises the following steps: (1) taking a silicon carbide substrate and manufacturing a gallium nitride LED crystal epitaxial wafer on the silicon carbide substrate; (2) detecting the surface and the thickness of the gallium nitride LED crystal epitaxial wafer; (3) dividing the gallium nitride LED crystal epitaxial wafer into a plurality of repeated units through a wafer expansion machine; (4) dispensing low-attenuation insulating gel and welding wires; (5) dispensing light decay resistant original gum on the gallium nitride LED crystal epitaxial wafer; (6) pouring a packaging adhesive; (7) detecting light splitting after demoulding; and (8) packaging and warehousing. The manufacturing method provided by the invention is convenient to operate, and is practical; and LEDs manufactured by adopting the method are high in light efficiency, light output brightness and reliability, long in service life and low in attenuation.
Description
Technical field
The present invention relates to technical field of electronic components, particularly relate to the LED manufacturing method for LED of a kind of high brightness and low decay.
Background technology
The Light-Emitting Diode crystal is made up of p-n junction, has unilateral conduction, directly electric energy is transformed into luminous energy.Light-Emitting Diode is divided into ruddiness, blue light and white light etc. again by the body color.Light-emitting diode is as a kind of novel light source; Rely on its volume little; Operating voltage is low, operating current is little, power consumption is little, luminous uniform and stable, advantages such as response speed fast, environmental protection, is used in markets such as display backlight source module, communication, computer and illumination by wide sending out.
Traditional light-emitting diode uses sapphire as substrate.Because sapphire is transparent material, make light-emitting diode the light emission that scatters occur, can't focus utilization and form consume, simultaneously, the light that scatters can be by inner each semiconductor layer absorption and accumulation of heat, and its heat conductivility is relatively poor, and brightness is low.
In addition, traditional light-emitting diode makes after being employed in and putting glue, dot fluorescent powder and encapsulating encapsulation on the wafer.But the manufacture craft of traditional light-emitting diode comes with some shortcomings; As transfer the powder poor selectivity, and baking temperature and selection of time are incorrect, and mixing color is incorrect; There are shortcomings such as brightness is low, decay is fast, poor reliability Deng the light-emitting diode that causes working it out; Particularly the light decay of white light is the most serious, and is not enough in the brightness of when illumination, and useful life is short.
Summary of the invention
Based on this, be necessary problem to the shortcoming of prior art, the LED manufacturing method for LED of a kind of high brightness and low decay is provided; Its manufacturing approach is simple, and the LED lumination of light emitting diode efficient that makes is high, and light output brightness is big; Reliability is high, and the life-span is long, low decay.
The LED manufacturing method for LED of a kind of high brightness and low decay, said manufacturing approach may further comprise the steps:
1., at first get silicon carbide substrates, insert silicon carbide substrates in the metal organic chemical vapor deposition wafer stove, and on said silicon carbide substrates, make gallium nitride based LED crystal epitaxial wafer;
2., after said gallium nitride based LED crystal epitaxial wafer completes, begin to detect the surface and the thickness of gallium nitride based LED crystal epitaxial wafer, and select surfacing and the uniform gallium nitride based LED crystal of thickness epitaxial wafer;
3., attach to selected gallium nitride based LED crystal epitaxial wafer and turn on the epitaxial, and adopt and expand the unit that brilliant machine is divided into gallium nitride based LED crystal epitaxial wafer a plurality of repetitions;
4., get a support, point has the insulating cement of low decay on the said support, adopts the gallium nitride based LED crystal epitaxial wafer after solid brilliant machine will be cut apart to be placed on the said support then, and toasts, and treats that gallium nitride based LED crystal epitaxial wafer carries out bonding wire after fixing;
5., treat that bonding wire finishes after; The anti-light decay virgin rubber of point on gallium nitride based LED crystal epitaxial wafer; After accomplishing, some glue adopt temperature control method to dry: at first to have the gallium nitride based LED crystal epitaxial wafer of anti-light decay virgin rubber under 80 ~ 100 ℃ condition, to toast 30 ~ 50 min point, and then go to 120 ~ 145 ℃ of baking 70 ~ 90 min down; Said anti-light decay virgin rubber is made up of silicone resin A glue, silicones B glue, fluorescent material and anti-heavy powder;
6., there is some the gallium nitride based LED crystal epitaxial wafer of anti-light decay virgin rubber to put into the mould bar; Get packaging plastic and vacuumize the packaging plastic injection mould bar after vacuumizing again, the outer surface encapsulation of structure LED light-emitting diode; Insert the pin support in the mould bar then; And in 120 ~ 130 ℃, toast, baking is moments later carried out the demoulding;
7., after the demoulding, toast 8 h once more, the unnecessary leg of back excision is accomplished in baking, and the detection beam split;
8., the warehouse-in of the LED light emitting diode package after will detecting.
Therein among embodiment, the welding operation method of said step in 4. is: at first choose gold thread, weld gold thread with the anode and the negative electrode of gallium nitride based LED crystal epitaxial wafer respectively.
Therein among embodiment, the manufacture method of the anti-light decay virgin rubber of said step in 5. may further comprise the steps:
5.-1, choose silicone resin A glue, in silicone resin A glue, add fluorescent material and anti-heavy powder, and adopt the ultrasonic wave mode to vibrate 10 ~ 15 min;
5.-2, treat that said silicone resin A glue, fluorescent material and anti-heavy powder mix after, add silicones B glue again, stir, adopt ultrasonic vibration 10 ~ 15 min again, make said anti-light decay virgin rubber;
5.-3, said anti-light decay virgin rubber is carried out vacuum treatment.
Among embodiment, the main component of said packaging plastic is an epoxy resin therein, and the surface micro of the packaging plastic that is poured in the said mould bar is lower than the die orifice of said mould bar.
Among embodiment, the main component of said silicone resin A glue is a silicones therein, and the main component of said silicones B glue is a curing agent.
Therein among embodiment; Metal organic chemical vapor deposition wafer stove is to utilize the organic metal of vapor-phase reactant, III family and the NH3 of V family to react on the silicon carbide substrates surface; Gallium nitride is deposited on the silicon carbide substrates surface; Through control temperature, pressure, reactant concentration and ratio, thereby control quality such as its composition and crystalline phase.
Among embodiment, the brilliant machine of said expansion adopts two cylinders to control up and down therein, will arrange closely gallium nitride based LED crystal epitaxial wafer to around evenly separately, make it to insert better on the welding work pieces, reach automatic moulding after the satisfied wafer gap.
The LED manufacturing method for LED of above-mentioned high brightness and low decay, easy to operate, practical.The making that said metal organic chemical vapor deposition wafer stove is a gallium nitride based LED crystal epitaxial wafer provides peace and quiet environment, has guaranteed that the composition and the thickness of gallium nitride based LED crystal epitaxial wafer is even.
The substrate that the present invention selects for use is a carborundum, the good heat conductivity of carborundum, and the useful life of prolongation LED light-emitting diode, the low decay, and increased the light-emitting area of LED light-emitting diode, thus improved the light extraction efficiency of LED light-emitting diode.
In expanding brilliant, solid crystalline substance and gluing process, all adopted full-automatic equipment.In a glue process, can better control what of glue amount, and the glue amount is even; Gallium nitride based LED crystal epitaxial wafer is heated evenly, thereby can effectively controls the temperature of PN junction, improve its heat conductivility; Improve the useful life and the brightness of LED light-emitting diode greatly, reduced attenuation rate.
The anti-light decay virgin rubber process of point has adopted secondary to join glue and secondary vibration mode, and it is more abundant to make each component mix, and anti-light decay virgin rubber dimpling; Overcome flat cup hot spot defect of insufficient, made hot spot more even, significantly improved the brightness of LED light-emitting diode; Strengthened luminous efficiency, attenuation rate is lower.
Packaging plastic surperficial recessed in the plane of mould bar, its material is mainly epoxy resin.Epoxy resin can form difform lens; Thereby the angle of departure of control light; Make the cirtical angle of total reflection of chip internal of LED light-emitting diode less, the light that its luminescent layer produced has only fraction to be removed, most of at chip internal through repeatedly reflecting and being absorbed; Therefore select for use the high epoxy resin of refractive index as transition, can improve the light extraction efficiency of chip.
Embodiment
The LED manufacturing method for LED of a kind of high brightness and low decay, said manufacturing approach may further comprise the steps:
1., at first get silicon carbide substrates, insert silicon carbide substrates in the metal organic chemical vapor deposition wafer stove, and on said silicon carbide substrates, make gallium nitride based LED crystal epitaxial wafer.
Said metal organic chemical vapor deposition wafer stove is to utilize the organic metal of vapor-phase reactant, III family and the NH3 of V family to react on the silicon carbide substrates surface; Gallium nitride is deposited on the silicon carbide substrates surface; Through control temperature, pressure, reactant concentration and ratio, thereby control quality such as its composition and crystalline phase, and then make good in integrity; Conductance is high, the gallium nitride based LED crystal epitaxial wafer of heat conduction better function.
2., after said gallium nitride based LED crystal epitaxial wafer completes, begin to detect the surface and the thickness of gallium nitride based LED crystal epitaxial wafer, and select surfacing and the uniform gallium nitride based LED crystal of thickness epitaxial wafer.
3., attach to selected gallium nitride based LED crystal epitaxial wafer and turn on the epitaxial, and adopt and expand the unit that brilliant machine is divided into gallium nitride based LED crystal epitaxial wafer a plurality of repetitions.The brilliant machine of said expansion adopts two cylinders to control up and down, and will arranging closely, gallium nitride based LED crystal epitaxial wafer makes it to insert on the welding work pieces better to all around evenly separately.
4., get a support, point has the insulating cement of low decay on the said support, adopts the gallium nitride based LED crystal epitaxial wafer after solid brilliant machine will be cut apart to be placed on the said support then, and toasts, and treats that gallium nitride based LED crystal epitaxial wafer carries out bonding wire after fixing.
Said solid brilliant machine is a fully-automatic equipment, the glue amount what can better be controlled, and the glue amount is even; Gallium nitride based LED crystal epitaxial wafer is heated evenly; Thereby can effectively control the temperature of PN junction, improve its heat conductivility, improve useful life and the brightness of LED greatly.Said insulating cement not only works the effect of connecing of being stained with, and can also dispel the heat, thereby plays the antidamping effect.
When bonding wire, at first choose gold thread, weld gold thread with the anode and the negative electrode of gallium nitride based LED crystal epitaxial wafer respectively again.
5., treat that bonding wire finishes after, on gallium nitride based LED crystal epitaxial wafer the point anti-light decay virgin rubber.After accomplishing, some glue adopt temperature control method to dry: at first to have the gallium nitride based LED crystal epitaxial wafer of anti-light decay virgin rubber under 80 ~ 100 ℃ condition, to toast 30 ~ 50 min point, and then go to 120 ~ 145 ℃ of baking 70 ~ 90 min down.
Said anti-light decay virgin rubber is made up of silicone resin A glue, silicones B glue, fluorescent material and anti-heavy powder.The main component of said silicone resin A glue is a silicones, and the main component of said silicones B glue is a curing agent.The manufacture method of said anti-light decay virgin rubber may further comprise the steps: at first choose silicone resin A glue, in silicone resin A glue, add fluorescent material and anti-heavy powder, and adopt the ultrasonic wave mode to vibrate 10 ~ 15 min; After treating that said silicone resin A glue, fluorescent material and anti-heavy powder mix, add silicones B glue again, stir, adopt ultrasonic vibration 10 ~ 15 min again, make said anti-light decay virgin rubber; Said anti-light decay virgin rubber is carried out vacuum treatment.
Said anti-heavy powder delays the deposition of fluorescent material, adopts ultrasonic vibration, and fluorescent material is fully mixed with anti-heavy powder, fluorescent material is evenly distributed, and then highlight.
6., there is some the gallium nitride based LED crystal epitaxial wafer of anti-light decay virgin rubber to put into the mould bar; Get packaging plastic and vacuumize the packaging plastic injection mould bar after vacuumizing again, the outer surface encapsulation of structure LED light-emitting diode; Insert the pin support in the mould bar then; And in 120 ~ 130 ℃, toast, baking is moments later carried out the demoulding.
Said pin support mainly plays conduction and supporting role.The main component of said packaging plastic is an epoxy resin, and the surface micro of the packaging plastic that is poured in the said mould bar is lower than the die orifice of said mould bar.Packaging plastic forms difform lens; Thereby the angle of departure of control light; Make the cirtical angle of total reflection of chip internal of LED light-emitting diode less, the light that its luminescent layer produced has only fraction to be removed, most of at chip internal through repeatedly reflecting and being absorbed; Therefore select for use the high epoxy resin of refractive index as transition, can improve the light extraction efficiency of chip.
7., after the demoulding, toast 8 h once more, the unnecessary leg of back excision is accomplished in baking, and the detection beam split.Baking is mainly in order fully to solidify packaging plastic once more.
8., the warehouse-in of the LED light emitting diode package after will detecting.
In sum, the present invention is easy to operate, practical, and the LED lumination of light emitting diode efficient that makes is high, and light output brightness is big, and reliability is high, and the life-span is long, low decay.The present invention selects silicon carbide substrates for use, good heat conductivity, and the useful life of prolongation LED light-emitting diode, the low decay, and increased the light-emitting area of LED light-emitting diode, thus improved the light extraction efficiency of LED light-emitting diode.
The anti-light decay virgin rubber process of point has adopted secondary to join glue and secondary vibration mode, and it is more abundant to make each component mix, and anti-light decay virgin rubber dimpling; Overcome flat cup hot spot defect of insufficient, made hot spot more even, significantly improved the brightness of LED light-emitting diode; Strengthened luminous efficiency, attenuation rate is lower.
The above embodiment has only expressed one or several execution modes of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the present invention's design, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with accompanying claims.
Claims (5)
1. a high brightness reaches the low LED manufacturing method for LED that decays, and it is characterized in that: said manufacturing approach may further comprise the steps:
1., at first get silicon carbide substrates, insert silicon carbide substrates in the metal organic chemical vapor deposition wafer stove, and on said silicon carbide substrates, make gallium nitride based LED crystal epitaxial wafer;
2., after said gallium nitride based LED crystal epitaxial wafer completes, begin to detect the surface and the thickness of gallium nitride based LED crystal epitaxial wafer, and select surfacing and the uniform gallium nitride based LED crystal of thickness epitaxial wafer;
3., attach to selected gallium nitride based LED crystal epitaxial wafer and turn on the epitaxial, and adopt and expand the unit that brilliant machine is divided into gallium nitride based LED crystal epitaxial wafer a plurality of repetitions;
4., get a support, point has the insulating cement of low decay on the said support, adopts the gallium nitride based LED crystal epitaxial wafer after solid brilliant machine will be cut apart to be placed on the said support then, and toasts, and treats that gallium nitride based LED crystal epitaxial wafer carries out bonding wire after fixing;
5., treat that bonding wire finishes after; The anti-light decay virgin rubber of point on gallium nitride based LED crystal epitaxial wafer; After accomplishing, some glue adopt temperature control method to dry: at first to have the gallium nitride based LED crystal epitaxial wafer of anti-light decay virgin rubber under 80 ~ 100 ℃ condition, to toast 30 ~ 50 min point, and then go to 120 ~ 145 ℃ of baking 70 ~ 90 min down; Said anti-light decay virgin rubber is made up of silicone resin A glue, silicones B glue, fluorescent material and anti-heavy powder;
6., there is some the gallium nitride based LED crystal epitaxial wafer of anti-light decay virgin rubber to put into the mould bar; Get packaging plastic and vacuumize the packaging plastic injection mould bar after vacuumizing again, the outer surface encapsulation of structure LED light-emitting diode; Insert the pin support in the mould bar then; And in 120 ~ 130 ℃, toast, baking is moments later carried out the demoulding;
7., after the demoulding, toast 8 h once more, the unnecessary leg of back excision is accomplished in baking, and the detection beam split;
8., the warehouse-in of the LED light emitting diode package after will detecting.
2. the LED manufacturing method for LED of high brightness according to claim 1 and low decay; It is characterized in that: the welding operation method of said step in 4. is: at first choose gold thread, weld gold thread with the anode and the negative electrode of gallium nitride based LED crystal epitaxial wafer respectively.
3. the LED manufacturing method for LED of high brightness according to claim 1 and low decay is characterized in that: the manufacture method of the anti-light decay virgin rubber of said step in 5. may further comprise the steps:
5.-1, choose silicone resin A glue, in silicone resin A glue, add fluorescent material and anti-heavy powder, and adopt the ultrasonic wave mode to vibrate 10 ~ 15 min;
5.-2, treat that said silicone resin A glue, fluorescent material and anti-heavy powder mix after, add silicones B glue again, stir, adopt ultrasonic vibration 10 ~ 15 min again, make said anti-light decay virgin rubber;
5.-3, said anti-light decay virgin rubber is carried out vacuum treatment.
4. the LED manufacturing method for LED of high brightness according to claim 1 and low decay, it is characterized in that: the main component of said packaging plastic is an epoxy resin, the surface micro of the packaging plastic that is poured in the said mould bar is lower than the die orifice of said mould bar.
5. the LED manufacturing method for LED of high brightness according to claim 1 and low decay, it is characterized in that: the main component of said silicone resin A glue is a silicones, the main component of said silicones B glue is a curing agent.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210183484.9A CN102709412B (en) | 2012-06-06 | 2012-06-06 | Method for manufacturing high-brightness low-attenuation LEDs |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210183484.9A CN102709412B (en) | 2012-06-06 | 2012-06-06 | Method for manufacturing high-brightness low-attenuation LEDs |
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| CN102709412A true CN102709412A (en) | 2012-10-03 |
| CN102709412B CN102709412B (en) | 2015-05-13 |
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| CN201210183484.9A Expired - Fee Related CN102709412B (en) | 2012-06-06 | 2012-06-06 | Method for manufacturing high-brightness low-attenuation LEDs |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014173239A1 (en) * | 2013-04-22 | 2014-10-30 | 贵州光浦森光电有限公司 | Led light bulb manufacturing method |
| CN105226165A (en) * | 2015-09-21 | 2016-01-06 | 安徽科发信息科技有限公司 | A kind of LED technique |
| CN106711311A (en) * | 2017-01-05 | 2017-05-24 | 永林电子有限公司 | Method for reducing fluorescent powder sedimentation rate of surface mount device |
| CN107394031A (en) * | 2017-07-21 | 2017-11-24 | 东莞中之光电股份有限公司 | A kind of LED flip-chip packageds method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005032803A (en) * | 2003-07-08 | 2005-02-03 | Hitachi Cable Ltd | Semiconductor manufacturing method and semiconductor wafer |
| CN101471412A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Method for making high brightness LED chip |
| US8107507B2 (en) * | 2008-04-07 | 2012-01-31 | Sumitomo Electric Industries, Ltd. | Group III nitride semiconductor element and epitaxial wafer |
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2012
- 2012-06-06 CN CN201210183484.9A patent/CN102709412B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005032803A (en) * | 2003-07-08 | 2005-02-03 | Hitachi Cable Ltd | Semiconductor manufacturing method and semiconductor wafer |
| CN101471412A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Method for making high brightness LED chip |
| US8107507B2 (en) * | 2008-04-07 | 2012-01-31 | Sumitomo Electric Industries, Ltd. | Group III nitride semiconductor element and epitaxial wafer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014173239A1 (en) * | 2013-04-22 | 2014-10-30 | 贵州光浦森光电有限公司 | Led light bulb manufacturing method |
| CN105226165A (en) * | 2015-09-21 | 2016-01-06 | 安徽科发信息科技有限公司 | A kind of LED technique |
| CN106711311A (en) * | 2017-01-05 | 2017-05-24 | 永林电子有限公司 | Method for reducing fluorescent powder sedimentation rate of surface mount device |
| CN107394031A (en) * | 2017-07-21 | 2017-11-24 | 东莞中之光电股份有限公司 | A kind of LED flip-chip packageds method |
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| CN102709412B (en) | 2015-05-13 |
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