CN102709412B - Method for manufacturing high-brightness low-attenuation LEDs - Google Patents
Method for manufacturing high-brightness low-attenuation LEDs Download PDFInfo
- Publication number
- CN102709412B CN102709412B CN201210183484.9A CN201210183484A CN102709412B CN 102709412 B CN102709412 B CN 102709412B CN 201210183484 A CN201210183484 A CN 201210183484A CN 102709412 B CN102709412 B CN 102709412B
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- light
- nitride based
- glue
- crystalline epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The invention discloses a method for manufacturing high-brightness low-attenuation LEDs. The method comprises the following steps: (1) taking a silicon carbide substrate and manufacturing a gallium nitride LED crystal epitaxial wafer on the silicon carbide substrate; (2) detecting the surface and the thickness of the gallium nitride LED crystal epitaxial wafer; (3) dividing the gallium nitride LED crystal epitaxial wafer into a plurality of repeated units through a wafer expansion machine; (4) dispensing low-attenuation insulating gel and welding wires; (5) dispensing light decay resistant original gum on the gallium nitride LED crystal epitaxial wafer; (6) pouring a packaging adhesive; (7) detecting light splitting after demoulding; and (8) packaging and warehousing. The manufacturing method provided by the invention is convenient to operate, and is practical; and LEDs manufactured by adopting the method are high in light efficiency, light output brightness and reliability, long in service life and low in attenuation.
Description
Technical field
The present invention relates to technical field of electronic components, particularly relate to the manufacture method of the LED light-emitting diode of a kind of high brightness and low decay.
Background technology
Light-Emitting Diode crystal is made up of p-n junction, has unilateral conduction, directly converting electric energy is become luminous energy.Light-Emitting Diode is divided into again ruddiness, blue light and white light etc. by body color.Light-emitting diode is as a kind of novel light source, little by means of its volume, the advantages such as operating voltage is low, operating current is little, power consumption is little, luminescence is uniform and stable, fast response time, environmental protection, are used in the markets such as display backlight source module, communication, computer and illumination by wide sending out.
Traditional light-emitting diode uses sapphire as substrate.Because sapphire is transparent material, light-emitting diode is occurred, and light four distributes penetrates, cannot focus utilization and form consume, and meanwhile, four loose light can be absorbed and accumulation of heat by each semiconductor layer inner, and its heat conductivility is poor, and brightness is low.
In addition, traditional light-emitting diode is obtained after adopting and put the encapsulation of glue, dot fluorescent powder and encapsulating on wafer.But the manufacture craft of conventional light emitting diodes comes with some shortcomings, as adjusted powder poor selectivity, baking temperature and selection of time incorrect, mixing color is incorrect, there is the shortcomings such as brightness is low, decay is fast, poor reliability etc. the light-emitting diode causing working it out, particularly the light decay of white light is the most serious, and when throwing light on, brightness is inadequate, and useful life is short.
Summary of the invention
Based on this, be necessary the problem of the shortcoming for prior art, the manufacture method of the LED light-emitting diode of a kind of high brightness and low decay is provided, its manufacture method is simple, and obtained LED light-emitting diode luminous efficiency is high, and light output brightness is large, reliability is high, and the life-span is long, low decay.
A manufacture method for the LED light-emitting diode of high brightness and low decay, described manufacture method comprises the following steps:
1., first get silicon carbide substrates, silicon carbide substrates is inserted in metal organic chemical vapor deposition wafer stove, and in described silicon carbide substrates, make gallium nitride based LED crystalline epitaxial sheet;
2., after described gallium nitride based LED crystalline epitaxial sheet completes, start the surface and the thickness that detect gallium nitride based LED crystalline epitaxial sheet, and select surfacing and thickness uniform gallium nitride based LED crystalline epitaxial sheet;
3., selected gallium nitride based LED crystalline epitaxial sheet attach to and turn on epitaxial, and adopt expansion brilliant machine gallium nitride based LED crystalline epitaxial sheet to be divided into the unit of multiple repetition;
4., get a support, on described support, point has the insulating cement of low decay, then adopts bonder to be placed on the bracket by the gallium nitride based LED crystalline epitaxial sheet after segmentation, and toasts, after gallium nitride based LED crystalline epitaxial sheet is fixing, carries out bonding wire;
5., treat after bonding wire, gallium nitride based LED crystalline epitaxial sheet puts the anti-light virgin rubber that declines, after some glue completes, employing temperature control method is dried: first have the gallium nitride based LED crystalline epitaxial sheet of the anti-light virgin rubber that declines under the condition of 80 ~ 100 DEG C, toast 30 ~ 50 min point, and then toast 70 ~ 90 min at going to 120 ~ 145 DEG C; The described anti-light virgin rubber that declines is made up of silicone resin A glue, silicones B glue, fluorescent material and anti-heavy powder;
6., the gallium nitride based LED crystalline epitaxial sheet of the anti-light virgin rubber that declines there is is to put into mould bar point, get packaging plastic and vacuumize, again the packaging plastic after vacuumizing is injected mould bar, build the outer surface encapsulation of LED light-emitting diode, then in pin support insert molding bar, and toast in 120 ~ 130 DEG C, baking in a moment, carries out the demoulding;
7., after the demoulding, again toast 8 h, toasted the leg that rear excision is unnecessary, and detected light splitting;
8., by the LED light emitting diode package warehouse-in after detection.
Wherein in an embodiment, described step 4. in welding operation method be: first choose gold thread, then gold thread welded with the anode of gallium nitride based LED crystalline epitaxial sheet and negative electrode respectively.
Wherein in an embodiment, described step 5. in the manufacture method of the anti-light virgin rubber that declines comprise the following steps:
-1 5., choose silicone resin A glue, in silicone resin A glue, add fluorescent material and anti-heavy powder, and adopt ultrasonic wave mode to vibrate 10 ~ 15 min;
-2 5., after described silicone resin A glue, fluorescent material and anti-heavy powder mixing, then add silicones B glue, stir, then adopt ultrasonic vibration 10 ~ 15 min, the obtained described anti-light virgin rubber that declines;
5.-3, the described anti-light virgin rubber that declines is carried out vacuum treatment.
Wherein in an embodiment, the main component of described packaging plastic is epoxy resin, the micro-die orifice lower than described mould bar in surface of the packaging plastic poured in described mould bar.
Wherein in an embodiment, the main component of described silicone resin A glue is silicones, and the main component of described silicones B glue is curing agent.
Wherein in an embodiment, metal organic chemical vapor deposition wafer stove utilizes the NH3 of the organic metal of vapor-phase reactant, III and V race to react in silicon carbide substrate surface, by gallium nitride deposition in silicon carbide substrate surface, by control temperature, pressure, reactant concentration and ratio, thus control its composition and brilliant equal mass.
Wherein in an embodiment, the brilliant machine of described expansion adopts two cylinder to control up and down, will arrange gallium nitride based LED crystalline epitaxial sheet closely and evenly separate to surrounding, and make it to insert on welding work pieces better, reaches automatic moulding after satisfied wafer gap.
The manufacture method of the LED light-emitting diode of above-mentioned high brightness and low decay, easy to operate, practical.Described metal organic chemical vapor deposition wafer stove is that the making of gallium nitride based LED crystalline epitaxial sheet provides peace and quiet environment, ensure that the composition of gallium nitride based LED crystalline epitaxial sheet and thickness even.
The substrate that the present invention selects is the good heat conductivity of carborundum, carborundum, extends the useful life of LED light-emitting diode, low decay, and the light-emitting area increasing LED light-emitting diode, thus improves the light extraction efficiency of LED light-emitting diode.
All automatic equipment is have employed in expansion crystalline substance, die bond and gluing process.In a glue process, can better the number of control rubber quality, and glue amount is even, gallium nitride based LED crystalline epitaxial sheet is heated evenly, thus effectively can controls the temperature of PN junction, improve its heat conductivility, substantially increase useful life and the brightness of LED light-emitting diode, reduce attenuation rate.
The anti-light virgin rubber process that declines of point have employed secondary and joins glue and secondary vibration mode, each component is mixed more abundant, and the anti-light virgin rubber dimpling that declines, overcome the defect of flat cup hot spot deficiency, make hot spot evenly, significantly improve the brightness of LED light-emitting diode, enhance luminous efficiency, attenuation rate is lower.
The surface of packaging plastic is recessed in the plane of mould bar, and its material is mainly epoxy resin.Epoxy resin can form difform lens, thus control the angle of departure of light, make the cirtical angle of total reflection of the chip internal of LED light-emitting diode less, the light that its luminescent layer produces only has fraction to be removed, major part is absorbed through multiple reflections at chip internal, therefore select epoxy resin that refractive index is high as transition, the light extraction efficiency of chip can be improved.
Embodiment
A manufacture method for the LED light-emitting diode of high brightness and low decay, described manufacture method comprises the following steps:
1., first get silicon carbide substrates, silicon carbide substrates is inserted in metal organic chemical vapor deposition wafer stove, and in described silicon carbide substrates, make gallium nitride based LED crystalline epitaxial sheet.
Described metal organic chemical vapor deposition wafer stove utilizes the NH3 of the organic metal of vapor-phase reactant, III and V race to react in silicon carbide substrate surface, by gallium nitride deposition in silicon carbide substrate surface, by control temperature, pressure, reactant concentration and ratio, thus control its composition and brilliant equal mass, and then obtained integrality is good, conductance is high, the gallium nitride based LED crystalline epitaxial sheet of heat conduction better function.
2., after described gallium nitride based LED crystalline epitaxial sheet completes, start the surface and the thickness that detect gallium nitride based LED crystalline epitaxial sheet, and select surfacing and thickness uniform gallium nitride based LED crystalline epitaxial sheet.
3., selected gallium nitride based LED crystalline epitaxial sheet attach to and turn on epitaxial, and adopt expansion brilliant machine gallium nitride based LED crystalline epitaxial sheet to be divided into the unit of multiple repetition.The brilliant machine of described expansion adopts two cylinder to control up and down, will arrange gallium nitride based LED crystalline epitaxial sheet closely and evenly separate to surrounding, and make it to insert on welding work pieces better.
4., get a support, on described support, point has the insulating cement of low decay, then adopts bonder to be placed on the bracket by the gallium nitride based LED crystalline epitaxial sheet after segmentation, and toasts, after gallium nitride based LED crystalline epitaxial sheet is fixing, carries out bonding wire.
Described bonder is fully-automatic equipment, can better the number of control rubber quality, and glue amount is even, gallium nitride based LED crystalline epitaxial sheet is heated evenly, thus effectively can control the temperature of PN junction, improve its heat conductivility, substantially increase useful life and the brightness of LED.Described insulating cement not only plays is stained with the effect of connecing, and can also dispel the heat, thus plays antidamping effect.
When bonding wire, first choose gold thread, then gold thread is welded with the anode of gallium nitride based LED crystalline epitaxial sheet and negative electrode respectively.
5., treat bonding wire after, gallium nitride based LED crystalline epitaxial sheet puts the anti-light virgin rubber that declines.After some glue completes, employing temperature control method is dried: first have the gallium nitride based LED crystalline epitaxial sheet of the anti-light virgin rubber that declines under the condition of 80 ~ 100 DEG C, toast 30 ~ 50 min point, and then toast 70 ~ 90 min at going to 120 ~ 145 DEG C.
The described anti-light virgin rubber that declines is made up of silicone resin A glue, silicones B glue, fluorescent material and anti-heavy powder.The main component of described silicone resin A glue is silicones, and the main component of described silicones B glue is curing agent.The manufacture method of the described anti-light virgin rubber that declines comprises the following steps: first choose silicone resin A glue, adds fluorescent material and anti-heavy powder, and adopt ultrasonic wave mode to vibrate 10 ~ 15 min in silicone resin A glue; After described silicone resin A glue, fluorescent material and anti-heavy powder mixing, then add silicones B glue, stir, then adopt ultrasonic vibration 10 ~ 15 min, the obtained described anti-light virgin rubber that declines; The described anti-light virgin rubber that declines is carried out vacuum treatment.
Described anti-heavy powder delays the precipitation of fluorescent material, adopts ultrasonic vibration, and fluorescent material is fully mixed with anti-heavy powder, fluorescent material is uniformly distributed, and then highlights.
6., the gallium nitride based LED crystalline epitaxial sheet of the anti-light virgin rubber that declines there is is to put into mould bar point, get packaging plastic and vacuumize, again the packaging plastic after vacuumizing is injected mould bar, build the outer surface encapsulation of LED light-emitting diode, then in pin support insert molding bar, and toast in 120 ~ 130 DEG C, baking in a moment, carries out the demoulding.
Described pin support mainly plays conduction and supporting role.The main component of described packaging plastic is epoxy resin, the micro-die orifice lower than described mould bar in surface of the packaging plastic poured in described mould bar.Packaging plastic forms difform lens, thus control the angle of departure of light, make the cirtical angle of total reflection of the chip internal of LED light-emitting diode less, the light that its luminescent layer produces only has fraction to be removed, major part is absorbed through multiple reflections at chip internal, therefore select epoxy resin that refractive index is high as transition, the light extraction efficiency of chip can be improved.
7., after the demoulding, again toast 8 h, toasted the leg that rear excision is unnecessary, and detected light splitting.Again toast mainly for making packaging plastic fully solidify.
8., by the LED light emitting diode package warehouse-in after detection.
In sum, the present invention is easy to operate, practical, and obtained LED light-emitting diode luminous efficiency is high, and light output brightness is large, and reliability is high, and the life-span is long, low decay.The present invention selects silicon carbide substrates, good heat conductivity, extends the useful life of LED light-emitting diode, low decay, and the light-emitting area increasing LED light-emitting diode, thus improves the light extraction efficiency of LED light-emitting diode.
The anti-light virgin rubber process that declines of point have employed secondary and joins glue and secondary vibration mode, each component is mixed more abundant, and the anti-light virgin rubber dimpling that declines, overcome the defect of flat cup hot spot deficiency, make hot spot evenly, significantly improve the brightness of LED light-emitting diode, enhance luminous efficiency, attenuation rate is lower.
The above embodiment only have expressed one or several execution modes of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (5)
1. a manufacture method for the LED light-emitting diode of high brightness and low decay, is characterized in that: described manufacture method comprises the following steps:
1., first get silicon carbide substrates, silicon carbide substrates is inserted in metal organic chemical vapor deposition wafer stove, and in described silicon carbide substrates, make gallium nitride based LED crystalline epitaxial sheet;
2., after described gallium nitride based LED crystalline epitaxial sheet completes, start the surface and the thickness that detect gallium nitride based LED crystalline epitaxial sheet, and select surfacing and thickness uniform gallium nitride based LED crystalline epitaxial sheet;
3., selected gallium nitride based LED crystalline epitaxial sheet attach to and turn on epitaxial, and adopt expansion brilliant machine gallium nitride based LED crystalline epitaxial sheet to be divided into the unit of multiple repetition;
4., get a support, on described support, point has the insulating cement of low decay, then adopts bonder to be placed on the bracket by the gallium nitride based LED crystalline epitaxial sheet after segmentation, and toasts, after gallium nitride based LED crystalline epitaxial sheet is fixing, carries out bonding wire;
5., treat after bonding wire, gallium nitride based LED crystalline epitaxial sheet puts the anti-light virgin rubber that declines, after some glue completes, employing temperature control method is dried: first have the gallium nitride based LED crystalline epitaxial sheet of the anti-light virgin rubber that declines under the condition of 80 ~ 100 DEG C, toast 30 ~ 50min point, and then toast 70 ~ 90min at going to 120 ~ 145 DEG C; The described anti-light virgin rubber that declines is made up of silicone resin A glue, silicones B glue, fluorescent material and anti-heavy powder;
6., the gallium nitride based LED crystalline epitaxial sheet of the anti-light virgin rubber that declines there is is to put into mould bar point, get packaging plastic and vacuumize, again the packaging plastic after vacuumizing is injected mould bar, build the outer surface encapsulation of LED light-emitting diode, then in pin support insert molding bar, and toast in 120 ~ 130 DEG C, baking in a moment, carries out the demoulding;
7., after the demoulding, again toast 8h, toasted the leg that rear excision is unnecessary, and detected light splitting;
8., by the LED light emitting diode package warehouse-in after detection.
2. the manufacture method of the LED light-emitting diode of high brightness according to claim 1 and low decay, it is characterized in that: step 4. in welding operation method be: first choose gold thread, then gold thread welded with the anode of gallium nitride based LED crystalline epitaxial sheet and negative electrode respectively.
3. the manufacture method of the LED light-emitting diode of high brightness according to claim 1 and low decay, is characterized in that: step 5. in the manufacture method of the anti-light virgin rubber that declines comprise the following steps:
-1 5., choose silicone resin A glue, in silicone resin A glue, add fluorescent material and anti-heavy powder, and adopt ultrasonic wave mode to vibrate 10 ~ 15min;
-2 5., after described silicone resin A glue, fluorescent material and anti-heavy powder mixing, then add silicones B glue, stir, then adopt ultrasonic vibration 10 ~ 15min, the obtained described anti-light virgin rubber that declines;
5.-3, the described anti-light virgin rubber that declines is carried out vacuum treatment.
4. the manufacture method of the LED light-emitting diode of high brightness according to claim 1 and low decay, is characterized in that: the main component of described packaging plastic is epoxy resin, the micro-die orifice lower than described mould bar in surface of the packaging plastic poured in described mould bar.
5. the manufacture method of the LED light-emitting diode of high brightness according to claim 1 and low decay, is characterized in that: the main component of described silicone resin A glue is silicones, and the main component of described silicones B glue is curing agent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210183484.9A CN102709412B (en) | 2012-06-06 | 2012-06-06 | Method for manufacturing high-brightness low-attenuation LEDs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210183484.9A CN102709412B (en) | 2012-06-06 | 2012-06-06 | Method for manufacturing high-brightness low-attenuation LEDs |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102709412A CN102709412A (en) | 2012-10-03 |
| CN102709412B true CN102709412B (en) | 2015-05-13 |
Family
ID=46902056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210183484.9A Expired - Fee Related CN102709412B (en) | 2012-06-06 | 2012-06-06 | Method for manufacturing high-brightness low-attenuation LEDs |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102709412B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014173239A1 (en) * | 2013-04-22 | 2014-10-30 | 贵州光浦森光电有限公司 | Led light bulb manufacturing method |
| CN105226165A (en) * | 2015-09-21 | 2016-01-06 | 安徽科发信息科技有限公司 | A kind of LED technique |
| CN106711311A (en) * | 2017-01-05 | 2017-05-24 | 永林电子有限公司 | Method for reducing fluorescent powder sedimentation rate of surface mount device |
| CN107394031A (en) * | 2017-07-21 | 2017-11-24 | 东莞中之光电股份有限公司 | A kind of LED flip-chip packageds method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005032803A (en) * | 2003-07-08 | 2005-02-03 | Hitachi Cable Ltd | Semiconductor manufacturing method and semiconductor wafer |
| CN101471412A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Method for making high brightness LED chip |
| US8107507B2 (en) * | 2008-04-07 | 2012-01-31 | Sumitomo Electric Industries, Ltd. | Group III nitride semiconductor element and epitaxial wafer |
-
2012
- 2012-06-06 CN CN201210183484.9A patent/CN102709412B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005032803A (en) * | 2003-07-08 | 2005-02-03 | Hitachi Cable Ltd | Semiconductor manufacturing method and semiconductor wafer |
| CN101471412A (en) * | 2007-12-27 | 2009-07-01 | 深圳市方大国科光电技术有限公司 | Method for making high brightness LED chip |
| US8107507B2 (en) * | 2008-04-07 | 2012-01-31 | Sumitomo Electric Industries, Ltd. | Group III nitride semiconductor element and epitaxial wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102709412A (en) | 2012-10-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104393154A (en) | Wafer level packaging method for LED (Light-Emitting Diode) chip level white light source | |
| CN102723424B (en) | Method for preparing fluorescent wafer for LED (light-emitting diode) | |
| CN102709412B (en) | Method for manufacturing high-brightness low-attenuation LEDs | |
| CN105720164B (en) | A kind of preparation method of white light LEDs | |
| CN103199183A (en) | Packaging structure enhancing brightness of vertical light-emitting diode (LED) chip | |
| CN101123286A (en) | LED encapsulation structure and method | |
| CN102254907B (en) | LED (light-emitting diode) and packaging method thereof | |
| TW201214786A (en) | Light emitting diode package structure and manufacturing method thereof | |
| CN103258940B (en) | A kind of method for packing of all solid state white light emitting diode | |
| CN102856478A (en) | Power type light-emitting diode, light-emitting diode bracket and preparation method thereof | |
| CN101515620A (en) | Method for manufacturing LED | |
| CN202888243U (en) | Power-type light emitting diode and light emitting diode support | |
| CN105810794A (en) | LED packaging structure | |
| CN203150541U (en) | LED light source based on COB packaging | |
| CN202094167U (en) | Illumination-level LED (light emitting diode) | |
| CN103117352B (en) | A kind of LED encapsulation structure and realize the method for fluorescent material shape-preserving coating based on it | |
| CN104022193B (en) | The method for packing and device of Rimless LED | |
| CN102214746B (en) | Method for manufacturing gallium nitride-based power LED (Light-Emitting Diode) chip | |
| CN201887075U (en) | Led | |
| CN102064249B (en) | Manufacturing method of novel gallium nitride LED (light emitting diode) chip electrode structure | |
| CN201228951Y (en) | Low absorption and high light effect LED illuminating apparatus | |
| WO2014086080A1 (en) | Led wafer modularized packaging process | |
| CN204651345U (en) | Package structure for LED | |
| CN103199184B (en) | A kind of encapsulating structure improving vertical LED chip brightness | |
| CN102610600B (en) | High-power white light emitting diode (LED) module encapsulated by nano silver solder paste and encapsulation method of high-power white light emitting diode module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150513 |