CN104386733B - 一种纳米硫化铜的合成方法 - Google Patents
一种纳米硫化铜的合成方法 Download PDFInfo
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- CN104386733B CN104386733B CN201410617810.1A CN201410617810A CN104386733B CN 104386733 B CN104386733 B CN 104386733B CN 201410617810 A CN201410617810 A CN 201410617810A CN 104386733 B CN104386733 B CN 104386733B
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- nano
- liquid
- copper sulfide
- solvent
- ionic liquid
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- 238000010189 synthetic method Methods 0.000 title claims abstract description 25
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000007788 liquid Substances 0.000 claims abstract description 40
- 239000002608 ionic liquid Substances 0.000 claims abstract description 32
- 239000002904 solvent Substances 0.000 claims abstract description 31
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 30
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims abstract description 30
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 claims abstract description 30
- 150000002500 ions Chemical class 0.000 claims abstract description 20
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims abstract description 20
- -1 imidazoles hydrogen chlorate Chemical class 0.000 claims abstract description 19
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims abstract description 10
- PYMRIPKOLUQCOG-UHFFFAOYSA-N C(C)OP(OCC)(=O)CC.[I] Chemical compound C(C)OP(OCC)(=O)CC.[I] PYMRIPKOLUQCOG-UHFFFAOYSA-N 0.000 claims abstract description 10
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000005119 centrifugation Methods 0.000 claims abstract description 10
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 10
- 229960004132 diethyl ether Drugs 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 10
- 230000008030 elimination Effects 0.000 claims abstract description 10
- 238000003379 elimination reaction Methods 0.000 claims abstract description 10
- 238000000227 grinding Methods 0.000 claims abstract description 10
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 10
- 239000011630 iodine Substances 0.000 claims abstract description 10
- 239000004570 mortar (masonry) Substances 0.000 claims abstract description 10
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims abstract description 10
- 235000009518 sodium iodide Nutrition 0.000 claims abstract description 10
- 239000007787 solid Substances 0.000 claims abstract description 10
- 238000003756 stirring Methods 0.000 claims abstract description 10
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000001291 vacuum drying Methods 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 abstract description 20
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 9
- 238000003786 synthesis reaction Methods 0.000 abstract description 8
- 239000012752 auxiliary agent Substances 0.000 abstract description 2
- 230000001699 photocatalysis Effects 0.000 abstract description 2
- 238000007146 photocatalysis Methods 0.000 abstract description 2
- BWFPGXWASODCHM-UHFFFAOYSA-N copper monosulfide Chemical class [Cu]=S BWFPGXWASODCHM-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000002086 nanomaterial Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 3
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001027 hydrothermal synthesis Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 238000000593 microemulsion method Methods 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 235000010755 mineral Nutrition 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- 238000010671 solid-state reaction Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000035126 Facies Diseases 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000035572 chemosensitivity Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052955 covellite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G3/00—Compounds of copper
- C01G3/12—Sulfides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/547—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom
- C07F9/645—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom having two nitrogen atoms as the only ring hetero atoms
- C07F9/6503—Five-membered rings
- C07F9/6506—Five-membered rings having the nitrogen atoms in positions 1 and 3
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
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CN201410617810.1A CN104386733B (zh) | 2014-11-05 | 2014-11-05 | 一种纳米硫化铜的合成方法 |
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CN201410617810.1A CN104386733B (zh) | 2014-11-05 | 2014-11-05 | 一种纳米硫化铜的合成方法 |
Publications (2)
Publication Number | Publication Date |
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CN104386733A CN104386733A (zh) | 2015-03-04 |
CN104386733B true CN104386733B (zh) | 2016-03-30 |
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Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112062149A (zh) * | 2020-09-16 | 2020-12-11 | 泉州师范学院 | 一种纳米硫化铜的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1847201A (zh) * | 2005-04-15 | 2006-10-18 | 浙江工业大学 | 含氨基的手性离子液体、制备方法及其应用 |
CN101367541A (zh) * | 2008-09-26 | 2009-02-18 | 沈阳化工学院 | 一种纳米硫化铜的合成方法 |
CN102795655A (zh) * | 2012-07-30 | 2012-11-28 | 黑龙江大学 | 一种分级花状空心结构CuS的制备方法 |
EP2475618B1 (fr) * | 2009-09-10 | 2013-09-04 | Universite Paul Sabatier Toulouse III | Matériau solide à l'état divisé, procédé de fabrication d'un tel matériau et utilisation d'un tel matériau dans une cellule photovoltaïque |
CN103936053A (zh) * | 2014-04-10 | 2014-07-23 | 厦门大学 | 一种硫化铜纳米线的制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5010409B2 (ja) * | 2007-09-14 | 2012-08-29 | トヨタ自動車株式会社 | 硫化物の単結晶微粉末、及びその製造方法 |
-
2014
- 2014-11-05 CN CN201410617810.1A patent/CN104386733B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1847201A (zh) * | 2005-04-15 | 2006-10-18 | 浙江工业大学 | 含氨基的手性离子液体、制备方法及其应用 |
CN101367541A (zh) * | 2008-09-26 | 2009-02-18 | 沈阳化工学院 | 一种纳米硫化铜的合成方法 |
EP2475618B1 (fr) * | 2009-09-10 | 2013-09-04 | Universite Paul Sabatier Toulouse III | Matériau solide à l'état divisé, procédé de fabrication d'un tel matériau et utilisation d'un tel matériau dans une cellule photovoltaïque |
CN102795655A (zh) * | 2012-07-30 | 2012-11-28 | 黑龙江大学 | 一种分级花状空心结构CuS的制备方法 |
CN103936053A (zh) * | 2014-04-10 | 2014-07-23 | 厦门大学 | 一种硫化铜纳米线的制备方法 |
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Publication number | Publication date |
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CN104386733A (zh) | 2015-03-04 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information |
Inventor after: Du Lihong Inventor before: Zhu Zhongliang |
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CB03 | Change of inventor or designer information | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170628 Address after: 102628, room 2, building 2212, center 3, 2 Xinghua street, Daxing District, Beijing Patentee after: BEIJING YONGBO TECHNOLOGY CO.,LTD. Address before: Lake Town, Xishan District People's road 214000 Jiangsu city of Wuxi province and red Ju Wei Village No. 100 Patentee before: Zhu Zhongliang |
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TR01 | Transfer of patent right | ||
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Inventor after: Liu Baocheng Inventor before: Du Lihong |
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Effective date of registration: 20170927 Address after: 065000 room 1, unit 18, building 1402, Peacock Garden, peacock Town, Guan County, Hebei, Langfang Patentee after: Liu Baocheng Address before: 102628, room 2, building 2212, center 3, 2 Xinghua street, Daxing District, Beijing Patentee before: BEIJING YONGBO TECHNOLOGY CO.,LTD. |
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Address after: 225300 Mingzhu Avenue, Yongan Town, Taizhou City, Jiangsu Province, No. 108 Patentee after: Liu Baocheng Address before: 065000 room 1, unit 18, building 1402, Peacock Garden, peacock Town, Guan County, Hebei, Langfang Patentee before: Liu Baocheng |
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Effective date of registration: 20180528 Address after: 102600 Beijing Daxing District Paradise Road four House 2 Building 1 unit 3 level 317 room. Patentee after: BEIJING ZHITOUJIA INTELLECTUAL PROPERTY OPERATION CO.,LTD. Address before: 225300 Pearl River Road, Yongan Town, Taizhou, Jiangsu Province, 108 Patentee before: Liu Baocheng Effective date of registration: 20180528 Address after: 225300 room 105, Pearl Road, Yongan Town, Yongan, Taizhou, Jiangsu Patentee after: Wei Deying Address before: 102600 Beijing Daxing District Paradise Road four House 2 Building 1 unit 3 level 317 room. Patentee before: BEIJING ZHITOUJIA INTELLECTUAL PROPERTY OPERATION CO.,LTD. |
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Address after: 210008 Hankou Road, Drum Tower District, Nanjing, Jiangsu Province, No. 22 Patentee after: Wei Deying Address before: 225300 room 105, Pearl Road, Yongan Town, Yongan, Taizhou, Jiangsu Patentee before: Wei Deying |
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Effective date of registration: 20191121 Address after: No. 23-6, Tianshan Third Road, Daxin Town, Jimo District, Qingdao, Shandong Province Patentee after: Hanergy Zhongke (Qingdao) new materials Co.,Ltd. Address before: 210008 Nanjing, Gulou District, Jiangsu, No. 22 Hankou Road Patentee before: Wei Deying |
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