CN104379820A - 薄膜的改进型准分子激光退火 - Google Patents
薄膜的改进型准分子激光退火 Download PDFInfo
- Publication number
- CN104379820A CN104379820A CN201380032042.7A CN201380032042A CN104379820A CN 104379820 A CN104379820 A CN 104379820A CN 201380032042 A CN201380032042 A CN 201380032042A CN 104379820 A CN104379820 A CN 104379820A
- Authority
- CN
- China
- Prior art keywords
- film
- pulse
- region
- forming region
- device forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 20
- 238000005224 laser annealing Methods 0.000 title abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 251
- 238000002425 crystallisation Methods 0.000 claims abstract description 163
- 230000008025 crystallization Effects 0.000 claims abstract description 146
- 239000010408 film Substances 0.000 claims description 374
- 238000002844 melting Methods 0.000 claims description 110
- 230000008018 melting Effects 0.000 claims description 110
- 239000013078 crystal Substances 0.000 claims description 61
- 238000013519 translation Methods 0.000 claims description 33
- 230000036961 partial effect Effects 0.000 claims description 27
- 230000001678 irradiating effect Effects 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000012528 membrane Substances 0.000 claims description 19
- 230000008859 change Effects 0.000 claims description 18
- 230000003287 optical effect Effects 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 21
- 230000001965 increasing effect Effects 0.000 abstract description 13
- 238000005499 laser crystallization Methods 0.000 abstract description 9
- 238000013459 approach Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 95
- 239000000758 substrate Substances 0.000 description 37
- 238000005516 engineering process Methods 0.000 description 36
- 239000002245 particle Substances 0.000 description 36
- 238000010586 diagram Methods 0.000 description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 description 28
- 239000000463 material Substances 0.000 description 28
- 238000010899 nucleation Methods 0.000 description 28
- 230000006911 nucleation Effects 0.000 description 28
- 230000007547 defect Effects 0.000 description 23
- 230000012010 growth Effects 0.000 description 19
- 239000011162 core material Substances 0.000 description 15
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 15
- 230000008901 benefit Effects 0.000 description 13
- 230000005855 radiation Effects 0.000 description 13
- 238000012545 processing Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 11
- 239000011521 glass Substances 0.000 description 11
- 230000000875 corresponding effect Effects 0.000 description 9
- 230000004907 flux Effects 0.000 description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 230000002829 reductive effect Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- 230000001276 controlling effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 238000009434 installation Methods 0.000 description 6
- 230000033001 locomotion Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 6
- 238000005457 optimization Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 238000007715 excimer laser crystallization Methods 0.000 description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 5
- 230000035939 shock Effects 0.000 description 5
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 230000004304 visual acuity Effects 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- 239000002178 crystalline material Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 230000008030 elimination Effects 0.000 description 3
- 238000003379 elimination reaction Methods 0.000 description 3
- 239000002360 explosive Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 206010021033 Hypomenorrhoea Diseases 0.000 description 2
- 241001311547 Patina Species 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 241000033695 Sige Species 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 125000002015 acyclic group Chemical group 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004323 axial length Effects 0.000 description 2
- 230000004087 circulation Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000011081 inoculation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000005316 response function Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 244000287680 Garcinia dulcis Species 0.000 description 1
- 241001190494 Notela Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 206010000496 acne Diseases 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000005188 flotation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000010411 postconditioning Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000000306 recurrent effect Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000010956 selective crystallization Methods 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- -1 such as Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261646480P | 2012-05-14 | 2012-05-14 | |
| US61/646,480 | 2012-05-14 | ||
| US201261659517P | 2012-06-14 | 2012-06-14 | |
| US61/659,517 | 2012-06-14 | ||
| US201261674017P | 2012-07-20 | 2012-07-20 | |
| US61/674,017 | 2012-07-20 | ||
| US201261692316P | 2012-08-23 | 2012-08-23 | |
| US61/692,316 | 2012-08-23 | ||
| US201213505961A | 2012-12-06 | 2012-12-06 | |
| US13/505,961 | 2012-12-06 | ||
| PCT/US2013/031732 WO2013172965A1 (fr) | 2012-05-14 | 2013-03-14 | Recuit perfectionné au laser à excimère pour films minces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104379820A true CN104379820A (zh) | 2015-02-25 |
Family
ID=49584138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380032042.7A Pending CN104379820A (zh) | 2012-05-14 | 2013-03-14 | 薄膜的改进型准分子激光退火 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2015516694A (fr) |
| KR (1) | KR20150013731A (fr) |
| CN (1) | CN104379820A (fr) |
| TW (1) | TW201346993A (fr) |
| WO (1) | WO2013172965A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10133061B2 (en) | 2015-07-14 | 2018-11-20 | Boe Technology Group Co., Ltd. | Laser device |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013120936A (ja) | 2011-12-07 | 2013-06-17 | Ultratech Inc | パターン効果を低減したＧａＮＬＥＤのレーザーアニール |
| JP6471379B2 (ja) * | 2014-11-25 | 2019-02-20 | 株式会社ブイ・テクノロジー | 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置 |
| US10858218B2 (en) | 2015-07-22 | 2020-12-08 | Mitsubishi Electric Corporation | Elevator apparatus |
| GB201614342D0 (en) * | 2016-08-22 | 2016-10-05 | M-Solv Ltd | An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030059990A1 (en) * | 2001-08-30 | 2003-03-27 | Shunpei Yamazaki | Method for manufacturing semiconductor device |
| US20030068836A1 (en) * | 2001-10-10 | 2003-04-10 | Mikio Hongo | Laser annealing apparatus, TFT device and annealing method of the same |
| CN1560907A (zh) * | 2004-03-08 | 2005-01-05 | 友达光电股份有限公司 | 激光退火装置及其激光退火方法 |
| US20070010104A1 (en) * | 2003-09-16 | 2007-01-11 | Im James S | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
| US20090001523A1 (en) * | 2005-12-05 | 2009-01-01 | Im James S | Systems and Methods for Processing a Film, and Thin Films |
| US20090218577A1 (en) * | 2005-08-16 | 2009-09-03 | Im James S | High throughput crystallization of thin films |
| US20110121306A1 (en) * | 2009-11-24 | 2011-05-26 | The Trustees Of Columbia University In The City Of New York | Systems and Methods for Non-Periodic Pulse Sequential Lateral Solidification |
| CN102232239A (zh) * | 2008-11-14 | 2011-11-02 | 纽约市哥伦比亚大学理事会 | 用于薄膜结晶的系统和方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI378307B (en) * | 2002-08-19 | 2012-12-01 | Univ Columbia | Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions |
| KR100490552B1 (ko) * | 2003-03-13 | 2005-05-17 | 삼성에스디아이 주식회사 | 박막 트랜지스터를 구비한 평판표시장치 |
| JP5034360B2 (ja) * | 2006-08-08 | 2012-09-26 | ソニー株式会社 | 表示装置の製造方法 |
| CN102770939B (zh) * | 2009-11-03 | 2015-12-02 | 纽约市哥伦比亚大学理事会 | 用于非周期性脉冲部分熔融膜处理的系统和方法 |
-
2013
- 2013-03-14 WO PCT/US2013/031732 patent/WO2013172965A1/fr active Application Filing
- 2013-03-14 JP JP2015512645A patent/JP2015516694A/ja active Pending
- 2013-03-14 CN CN201380032042.7A patent/CN104379820A/zh active Pending
- 2013-03-14 KR KR1020147034500A patent/KR20150013731A/ko not_active Application Discontinuation
- 2013-04-12 TW TW102113093A patent/TW201346993A/zh unknown
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030059990A1 (en) * | 2001-08-30 | 2003-03-27 | Shunpei Yamazaki | Method for manufacturing semiconductor device |
| US20030068836A1 (en) * | 2001-10-10 | 2003-04-10 | Mikio Hongo | Laser annealing apparatus, TFT device and annealing method of the same |
| US20070010104A1 (en) * | 2003-09-16 | 2007-01-11 | Im James S | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
| CN1560907A (zh) * | 2004-03-08 | 2005-01-05 | 友达光电股份有限公司 | 激光退火装置及其激光退火方法 |
| US20090218577A1 (en) * | 2005-08-16 | 2009-09-03 | Im James S | High throughput crystallization of thin films |
| US20090001523A1 (en) * | 2005-12-05 | 2009-01-01 | Im James S | Systems and Methods for Processing a Film, and Thin Films |
| CN102232239A (zh) * | 2008-11-14 | 2011-11-02 | 纽约市哥伦比亚大学理事会 | 用于薄膜结晶的系统和方法 |
| US20110309370A1 (en) * | 2008-11-14 | 2011-12-22 | The Trustees Of Columbia University In The City Of New York | Systems and methods for the crystallization of thin films |
| US20110121306A1 (en) * | 2009-11-24 | 2011-05-26 | The Trustees Of Columbia University In The City Of New York | Systems and Methods for Non-Periodic Pulse Sequential Lateral Solidification |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10133061B2 (en) | 2015-07-14 | 2018-11-20 | Boe Technology Group Co., Ltd. | Laser device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150013731A (ko) | 2015-02-05 |
| TW201346993A (zh) | 2013-11-16 |
| WO2013172965A1 (fr) | 2013-11-21 |
| JP2015516694A (ja) | 2015-06-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9087696B2 (en) | Systems and methods for non-periodic pulse partial melt film processing | |
| CN102770939B (zh) | 用于非周期性脉冲部分熔融膜处理的系统和方法 | |
| US7645337B2 (en) | Systems and methods for creating crystallographic-orientation controlled poly-silicon films | |
| US6635932B2 (en) | Thin film crystal growth by laser annealing | |
| US9646831B2 (en) | Advanced excimer laser annealing for thin films | |
| US8802580B2 (en) | Systems and methods for the crystallization of thin films | |
| JP5068171B2 (ja) | 結晶方位制御ポリシリコン膜を生成するためのシステム及び方法 | |
| US8440581B2 (en) | Systems and methods for non-periodic pulse sequential lateral solidification | |
| CN104379820A (zh) | 薄膜的改进型准分子激光退火 | |
| CN1534725A (zh) | 单晶硅膜的制造方法 | |
| CN101288155A (zh) | 高生产率的薄膜结晶过程 | |
| WO2011065992A1 (fr) | Systèmes et procédés pour solidification latérale séquentielle à impulsions non périodiques | |
| CN101111925A (zh) | 用于产生结晶方向受控的多晶硅膜的系统和方法 | |
| CN101038867B (zh) | 结晶半导体薄膜的方法 | |
| US20070238270A1 (en) | Method for forming polycrystalline film | |
| KR20120082022A (ko) | 비-주기적 펄스 부분 용융 막가공을 위한 시스템 및 방법 | |
| GB2566477A (en) | Method of processing a target material | |
| EP2497105A1 (fr) | Systèmes et procédés de traitement de couche mince partiellement fondue à impulsions non périodiques | |
| TWI376727B (en) | A laser-irradiated thin film having variable thickness on a substrate, a method for processing the same and a device comparsing the same | |
| Fiebig | TFT annealing | |
| JP2000114175A (ja) | 半導体膜結晶化方法及び製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150225 |
|
| WD01 | Invention patent application deemed withdrawn after publication |