TWI376727B - A laser-irradiated thin film having variable thickness on a substrate, a method for processing the same and a device comparsing the same - Google Patents

Description

137,6727 v- --.-'^r^ ^ν·Γ^ -V-· ^ , rv 游,:声:明_明: [Technical Field of the Invention] The present invention relates to the treatment of a film The method and system of matter, and more particularly relates to a method and system for forming a crystalline film from an amorphous or polycrystalline film by using laser irradiation. In particular, the present invention relates to systems and methods for making integrated thin film transistors.

[Prior Art] In recent years, different techniques for crystallizing or improving the crystallization of an amorphous or polycrystalline semiconductor film have been studied. This technology is used in the manufacture of many devices such as image sensors and active array liquid crystal display (AMLCD) devices. In the latter example, a rectangular thin film transistor (TFT) is fabricated on a suitable transparent substrate, and each transistor is used as a pixel controller. The semiconductor thin film uses laser laser annealing (ELA) in which a region of the thin film is irradiated with a laser of a molecular laser to partially melt the thin film and then crystallized. This process typically uses a long and narrow beam shape that continuously advances over the surface of the substrate such that it is sufficient to illuminate the entire semiconductor film as a single scan over the surface = A produces homogeneity (h) 〇m〇gene〇us) a small grained polycrystalline film; however, this method typically suffers from microstructural inhomogeneities due to energy density waviness and/or unevenness between pulses and pulses. The result of the hook beam intensity rim. Sequential lateral solidification (SLS) using a laser strike is a method used to form high quality polycrystalline films having large and uniform grains. A polycrystalline film can exhibit enhanced switching characteristics because a reduction in the number of grain boundaries in the electron > tile direction provides higher electron mobility. The S L S system and processing also provides controlled grain boundary locations. The disclosures of the U.S. Patent Nos. 6,322,625 and 6,368,945 to the disclosure of the S.S.S.S.S.S.S.S.S.S. and

In this article, and these patents were transferred to the applicant of the case. In an SLS process, an initial amorphous (or small-grain polycrystalline) tantalum film was subjected to a very narrow laser. Illuminated by a small beam (beamiet). The small beam is formed by passing a laser beam through a grooved mask that is projected onto the surface of the tantalum film. The small beam melts the amorphous film and then recrystallizes to form an Multiple crystals. The crystals grow mainly from the edge of the irradiated area toward the center. At an initial small beam of light has been directed to that position. One of the lateral growth of the front film is less than the lateral growth of the previous small beam

At the position of the most recently irradiated film, the crystal grains grow laterally from the crystal seed of the polymorph material in the step. The result of this is 'the height of the crystal along the direction in which the small beam travels. The elongated crystal grains are parallel to the grain boundaries of the long axis, and the long grain axis is substantially perpendicular to the length of the narrow beam. Figure 6 shows the growth of the crystal according to this method. Crystalline materials are used to make electronic components to sleep. When electricity is used in 7C parts, the carrier resistance is affected by the combination of barriers. A barrier is a load of 1376727.

The obstacle that must be overcome when it is moved by a given potential. Compared with moving in the direction of the long grain axis, when the carrier moves perpendicular to the direction of the long grain axis of the polymorphic substance or when a carrier moves across a large number of small grains, The number of crystalline boundaries across the carrier increases, so the carrier will experience greater resistance. Therefore, the performance of an element such as a TFT fabricated on a polycrystalline film depends on the quality of the crystal and the direction of the crystal of the TFT channel with respect to the long crystal grain axis.

Components utilizing polycrystalline films typically do not require the entire film to have the same system performance and/or direction of movement. For example, the row and column drivers (integration area) of a TFT may have a much larger mobility requirement than a controller area or a pixel area. Processing the entire film surface, such as the integrated area and the pixel area, under conditions necessary to meet the high mobility requirements of the high mobility of the integrated area, would be inefficient and uneconomical because of the expense in the low performance area of the film. Excessive illumination and processing time are not helpful for system performance.

SUMMARY OF THE INVENTION The present invention recognizes that films of different thicknesses have different film properties. In particular, for a film that is treated identically, a thicker film exhibits a higher carrier mobility than a thinner film. This is observed in all directions of curing, such as CW-laser scanning, sequential laser curing, and regional melting refining, and for lasers that have been used, solid-state lasers or continuous-wave lasers are used as lightning. The same is true for the film treated with the source. The present invention provides a crystalline film comprising a first crystallization zone, the seventh

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孓月曰 Revision Replacement Page I 100.10.4^8 A crystalline region has a first film thickness which is in a junction to provide a first crystalline grain structure. The film seeding zone 5 is processed in a film thickness region to provide a second crystal grain structure having a film thickness that is different and selected to provide a crystalline region of the degree and direction. Typically, the crystal is longer in thickness than the growth direction of the cyanine crystal. Has a wider grain. The film is suitably used as a material or a metal as an active conductive material in a thin film transistor (TFT). In one aspect of the invention, a process is to produce a first laser beam pattern from a pulsed laser beam having at least a portion of a first region of strength sufficient to at least partially film; (b) Generating a second laser beam pattern sufficient to at least partially dissolve at least a portion of the thin to be crystallized, wherein the first region of the film comprises a second thickness and Not identical; (c) using the first set of patterned small light, the first region of the film to form a first crystalline region; and (d) using the second set of patterned small beam second regions The small beam used to form a laser beam pattern having a second grain structure comprising a "set" of patterned small beams includes one or more laser beamlets. The crystal treatment is processed in a step comprising a second resolution which is treated in a crystallization process. The first and second thin regions having a selected crystallizing range may be included in a thicker film or an integrated circuit device. The film may be a film method comprising: (a) a beam pattern that melts a crystallized pulsed laser beam pattern having a second region of a strength film comprising a first thickness and First and second thickness beams (beams) illuminate the first portion of a grain structure to illuminate the second crystalline region of the film. The bundle, and the group of patterns 1376727

In one or more embodiments of the invention, the method further repositions the first laser beam pattern on the first region for illuminating the first region of the film after step (c) And illuminating the first region of the film as in step (c), positioning and illuminating at least once; and after step (d), re-positioning the two laser beam patterns on the film for The second portion of the thin second region is illuminated and the thin second region is illuminated as in step (d), the repositioning and illumination steps occurring at least once. In one or more embodiments of the invention, the illumination conditions are selected from the conditions of sequential lateral solidification (SLS), laser exponential annealing (ELA), and uniform crystal crystallization (U G S ). A plurality of laser beams are used to generate a plurality of laser beam patterns. The laser beam sources illuminate the same or different regions of the film. Including the thin portion, the second portion, the weight #ί, the first membrane of the first membrane, the suitable hemispherical structure, the beam source can be used

[Embodiment] A thin film crystallized using a laser induced crystal growth technique is partially related to the thickness of the film to be processed. This observation is performed by laser beams having different energy beam characteristics to crystallize different regions of the film in an energy and time manner and to provide film performance characteristics of the fabricated element. Laser-induced crystals are illuminated by a laser using a wavelength of energy absorbed by the film. The source may be a laser source including, but not limited to, a laser, a laser, a solid laser, and a solid laser. The illumination beam pulse can also be generated by other sources of energy capable of producing short energy pulses of the molten film. These conventional membranes are required for the efficiency of the film to be suitable for any of the thinning waves.

9 1376727 The source may be a pulsed solid-state laser 'a continuous wave of light that has been split', a pulsed electron beam, a pulsed ion beam, and so on.

Although treated similarly, films of different thicknesses will have different film properties. Thick films exhibit electron mobility that is generally greater than that of similarly processed films. As used herein, 'thickness' and, thin, and the like are relative' so that any film that is relatively thicker than a second comparative film will exhibit improved film properties. Positioned on a substrate 1 may have one or more intermediate layers between them. The film may have a thickness of between 100 angstroms (A) and 10,000 angstroms, as long as at least some regions of the film may be partially or It is sufficient to completely melt through only one of its thicknesses. While the present invention is suitable for films of all thicknesses that can accept laser induced crystallization, "thick" films typically range from about 500 angstroms (50 nm) to about 1 0000. Between angstroms (1 micron), more typically from about 500 angstroms (50 nm) to about 5000 angstroms (500 nm); and "thin" films typically range from about 1 angstrom (50 nm) to about Between 2000 angstroms (200 nm), more typically between about 200-500 angstroms (20-50 nm).

In one or more embodiments, the film can be a metal or a half conductor film. Exemplary metals include Ming, Tong, Lu, Qin, Jin and 4 mesh. Exemplary semiconductor films include conventional semiconductor materials such as germanium, germanium, and germanium. It is also possible to use other elements or semiconductor materials as the semiconductor film. An intermediate layer under the semiconductor film is used as a thermal insulating layer to ensure that the substrate is not heated or acts as a barrier layer to prevent impurities from diffusing into the film. The intermediate layer may be made of yttrium oxide. Made of a mixture of 'tantalum nitride and/or oxide' nitride or many other substances. 10 1376727 Although thick films exhibit high electron mobility, the handling of such films is generally more expensive and time consuming. For example, a higher energy density may be required to completely penetrate the thickness of the film. Since higher energy densities are typically achieved by concentrating the laser beams into a smaller beam shape (cross-sectional area), only a smaller surface area of the film can be processed at a time, resulting in a lower sample yield.

Therefore, according to one or more embodiments of the present invention, a semiconductor film to be crystallized having different heights (film thickness) is provided. The semiconductor film layer is "thick" in the region where high electron mobility is required on the film to optimize the function of the device. The lower electron mobility on the film is in the proper region for the performance of the component, and a 'thin' film layer is deposited. Therefore, a thick film is only required to be on the substrate at a high speed or In areas of high electron mobility, the thick film regions are treated with a slower, more intense crystallization process. The remaining surfaces (typically the majority of the surface) are thin. The film layer is processed quickly using a low cost, low energy crystallization process.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view of a film article 1 具有 having a plurality of film thickness regions in accordance with one or more embodiments of the present invention. A film 110 is deposited onto the substrate 120. The film 11 has regions of different film thicknesses. The region 125 of the film has a film thickness of _ u which is greater than the thickness t2 of the region 130. For example, u is in the range of 5〇-2 0〇nm, and t2 is in the range of 20_50nm. Further, the polymorphic grain structure of the regions 1 2 5 and 1 30 is different. The crystal structure may be polymorphic or have a large single crystal sub-domain 11 1376727

(subdomain). Region 125 has fewer crystal boundaries than region 130 or

There are fewer defects per unit area and the region 125 has a higher electron mobility. While the actual electron mobility of these regions will vary with the composition of the film and the lateral crystallization technique used, the thick region 1 25 typically has an electron mobility that is greater than cm2/Vs. Or about 300_4〇〇cm2/Vs and the region 13 has an electron mobility of less than 300 cm2/Vs. In one or more embodiments of the present invention, the 'region 125 is a high electronic moving component, such as a TFT integrated region, the active channel region, and the region 13 is a low electron mobility component such as a pixel control component. aisle. In one or more embodiments, the single crystalline subfield of the crystalline regions is large enough to accommodate an electronic component, such as the active channel of the TFT'.

Improved crystal properties can be observed regardless of the particular crystallization treatment used. The films may be crystallized laterally or laterally, or the film may be crystallized using spontaneous nucleation. As used herein, "lateral crystal growth," or "lateral crystallization", and the like, refers to a growth technique in which a region of a film is melted to the film/substrate interface and crystallization occurs laterally. Across the crystallization front of the entire substrate surface. The term "transverse crystal growth" or "transverse crystal" refers to a growth technique in which a region of a film is partially melted 'if not melted to the entire thickness, and crystallization is a crystal front that occurs across the thickness of the film (crystallization front) Above, that is, in the direction traversing the above-mentioned lateral crystallographic direction. The spontaneous nucleation is a crystal growth system which is dispersed on the melted region and each crystal nucleus grows straight 12 1376727

Until it meets other growing crystals. Exemplary crystallization techniques include laser laser annealing (ELA), sequential lateral solidification (SLS), and uniform grain crusting (UGS) crystallization.

Referring to Figure 2A, the EL A process uses a long and narrow beam of light 150 to illuminate the film. In an ELA, a linear and homogeneous excited molecular laser beam is generated and scanned across the surface of the film. For example, the central portion of the ELA beam has a width 160 of up to 1 cm (typically about 0.4 mm) and a length 170 of up to about 70 cm (typically about 400 mm) so that the beam can illuminate the entire semiconductor film in a single scan. 180. The laser light of the excimer can be absorbed very efficiently into an ultra-thin amorphous crucible surface layer and heated to the underlying substrate. The amorphous germanium layer is rapidly heated and melted during the duration of the laser pulse (about 20-50 ns) and intensity (350-4 00 mJ/cm 2 ); however, the energy dose is controlled so that the film is not Completely melted to the substrate. As the melt cools, it crystallizes into a polycrystalline structure. Linear beam exposure is a multiple shot technique with a 90% to 95% overlap rate. The properties of the sand film are related to the dose stability and uniformity of the applied laser light. Linear beam exposure typically produces electron mobility with 〇〇 to 150 cm2/V-s. Referring to Figure 2B, there is shown an apparatus 200 that can be used for sequential lateral solidification and/or uniform grain structure crystallization. Device 200 has a laser source 220. The laser source 220 can include a laser (not shown) and an optical lens, including a mirror and a lens that shapes a laser beam 240 (shown in phantom) and directs it toward a substrate 260. The material 260 is a building supported by a table 270. The laser beam 240 is passed through a mask 13 held by the mask holder 290. The AMf1fl〇 10, ί-θ-280 is repaired. The laser beam 240 produced by the laser source 220 provides a beam intensity ranging from 10 mJ/cm 2 to 1 mJ/cm 2 , a pulse duration ranging from 2 〇 to 3 〇〇 ns, and a range from 10 Hz to 300 Hz. Pulse repetition rate.

Lasers currently available on the market may have the above output, such as Lambda Steel 1 000, which is available from Lambda Physik, Inc., Ft. Lauderdale, Florida, USA. After passing through the mask 28, the laser beam 240 passes through a projection lens 295 (shown schematically). Projection lens 295 reduces the size of the laser beam and simultaneously increases the optical energy intensity at a desired location 265 on the substrate 260. In terms of image size, demagnification is typically between Reducing between 3 and 7 times the number of stages is best done by a factor of five. For a reduction of 5 times, the image of the mask 280 at the location 265 to the surface is 25 times smaller than the total area of the mask. This correspondingly increases the energy density of the laser beam 240 at location 265. .

Table 270 is a precision x_y table that accurately positions the substrate 260 underneath the laser beam 240. The table 27 can also be moved along z so that it can be moved up and down to facilitate focusing or defocusing the image of the mask 280 that produces the laser beam 240 at location 265. In other embodiments of the method of the invention, the table 270 is preferably also rotatable. In uniform grain structure (UGS) crystallization, a film of uniform crystal structure is obtained by masking a laser beam such that uneven edge regions of the laser beam are not irradiated to the film. . The mask may be relatively large, e.g., it may be 1 cm x 0 5 cm; however, it should be smaller than the size of the laser beam such that the edge irregularities in the laser beam will be 14 1376727 fmi

Blocked. The laser beam provides sufficient energy to partially or completely illuminate the area of the thin mob. The USG crystal provides a semiconductor film having an edge region and a central region of uniform micronized polycrystals of different sizes. In the case where the laser irradiation energy exceeds the threshold value of the complete melting, the edge region exhibits a large laterally grown crystal. In the case where the laser irradiation energy is lower than the threshold value of the complete melting, the grain size is rapidly reduced from the edge of the irradiated region. For a detailed description, refer to the US Patent Application No. "Process and System for Laser Crystallization Processing of Semiconductor film Regions on a Substrate to Minimize Edge Area, and Structure of Such Semiconductor Film Regions" 60/405,084, the contents of which is incorporated herein by reference.

Sequential lateral solidification is a particularly useful lateral crystallization technique because it enables controlled crystallization of grain boundary locations and provides extremely large crystalline grains. Sequential lateral solidification produces a large grained semiconductor structure, such as a tantalum structure, by small-scale conversion between successive pulses struck by a laser of a laser. The invention has been described with particular reference to sequential lateral curing and filming; however, it should be understood that the invention may be conveniently practiced with other lateral crystallization techniques or other materials. Figure 3 shows a mask 310 having a plurality of slits 320 and a slit spacing 340 interposed therebetween. The mask can be made of a quartz material and includes a metal or dielectric coating that is etched using conventional techniques to form a mask having features of any shape or size. The length of the mask features is selected to correspond to the dimensions of the components to be fabricated on the surface of the substrate.

1376727 pages Same as. The width 360 of the mask features can also vary. In some implementations, ^^' was chosen to be small enough to avoid small crystal nuclei in the melting zone while being large enough to allow lateral crystallisation of each excimer pulse to be magnified. For example, the mask feature can have a length of between about 25 and microns and a width of between about 2 and 5 microns. An amorphous tantalum film sample is processed into a single crystal or polycrystalline film 'which is controlled to modulate the energy density of the laser pulses by generating a predetermined energy density of the complex molecular lightning impulses, Modulated laser pulse homogenization 'masks some portions of the homogenized modulated lightning impulse into a patterned small beam, and the small beam of the image is used to illuminate an amorphous tantalum film sample to be The partial melting of the small light, and the controlled transfer of the sample relative to the pattern beam by the processing of the amorphous germanium film sample into a single grain boundary controlled polycrystalline germanium film. . In one or more embodiments of the sequential curing process, elongated crystal grains can be produced which are separated by boundaries parallel to the long grain axis. This method is described with reference to Figs. 4 to 6 to show a region 400 before crystallization. A laser pulse directed into the field 460 causes the crystallized crucible to melt. "Crystal begins at the solid boundary of the region and continues inward toward the centerline 480. The distance the body grows (also referred to as the lateral growth length) is a function of the amorphous 矽 thickness, substrate temperature 'energy east' characteristics, buffer layer material, mask set, and the like. A typical lateral growth of a 5 〇 nm thick film is 1.2 microns long. After each pulse, the substrate (or mask) is moved, and the grain is grown to a maximum of 1000 矽 thin veins that will be crystallized by the crystallized or crystal grains. Shape 460 crystalline film state isocratic approximate position 1 16 1376727 曰Revision replacement page

Not more than the distance of the lateral growth length. In order to improve the quality of the resulting crystal, the nutrient is advanced by a distance that is much less than the lateral crystal growth length, such as not more than half the length of the lateral crystal growth. A subsequent pulse is then directed to the new region. By shifting the image of the slits 460 by a small distance, the crystals produced by the above steps are used as seed crystals for subsequent crystallization of adjacent substances. By repeating the advancement of the slit image and the processing of the short shots, the crystals can be epitaxially grown in the direction of the slit motion.

Figure 5 shows the area 440» after a number of pulses. As shown, the treated area 500 has formed an elongated crystal that grows in a direction generally perpendicular to the length of the slit. Substantially perpendicular means that most of the lines formed by the crystalline boundary 520 are extendable to intersect the centerline 480 indicated by the dashed line.

Figure 6 shows the situation with several additional pulses after Figure 5. The crystals continue to grow from a polymorphic zone in the direction of the slit motion. Preferably, the slits continue to advance at substantially the same distance. Each slit advances until it reaches the edge of a polymorphic region formed by the previous slit. This sequential lateral solidification process requires a lot of micro-transfer and increases the processing time, but these micro-transfers can produce a film having extremely long, low-defective grains. In one or more embodiments, this process is used to process thick regions of the semiconductor film. The polycrystalline grains obtained using this treatment are typically high electron mobility, such as 300-400 cm2/V-s. These very elongated die are well suited to the integrated circuit area on an AMLCD device. According to the above-mentioned sequential lateral curing treatment method, the entire film is made 17 1376727

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Crystallization is carried out using a plurality of pulses. This method is hereinafter referred to as an n-shot process, and η represents the number of laser pulses ("shoots,") required to complete the crystallization. Further details of the n-shot can be The two patents are found in U.S. Patent No. 6,322,625, entitled "Crystallization Processing of Semiconductor Film Regions on a Substrate and Devices Made Therewith", and U.S. Patent No. 6,368,945, entitled "System for Providing a Continuous Motion Sequential Lateral Solidification". The content of the case is hereby incorporated by reference.

In one or more embodiments, the region of the semiconductor film is treated using a sequential side-cure process that produces crystal grains that are more than the aforementioned 'n shots. The crystal grains produced by the method are short. Therefore, the electron mobility of the film regions is low; however, the film is quickly processed and scanned through the film substrate in a minimum number of times, thereby making it a cost-effective process. Techniques. These crystallized regions are well suited for areas where a semiconductor film is used to fabricate pixel control elements on an AMLCD device. This process uses a mask, such as the mask shown in Figure 3, where the mask line 320 Having a width of about 4 microns, and each mask line is separated by a spacing of 3 4 0. The sample is illuminated by a first laser pulse. As shown in Figure 7A, the laser pulse will The areas 71 〇, 711, 7 12 on the sample melt, each of the melted areas being about 4 microns wide by 720 and separated by a spacing of 7 2 1 of about 2 microns. This first laser pulse is induced Illuminated area 710, 711, 712 The crystal growth begins with the melting boundary 730 opening 18 1376727 and proceeds into the melting zone such that polymorphs 74 are formed in the illuminated regions, as shown in Figure 7B.

The sample is then transferred about a half (or more) distance from the sum of the width 360 and the spacing 340, and the film is illuminated by a second laser strike. The second illumination melts the remaining amorphous region 742 between the most recently crystallized region 740 and the most crystalline crystal seed region 745. As shown in Fig. 7C, the crystal structure forming the central portion 745 grows outward when the melted region 742 is solidified, so that a uniform elongated crystal polymorph type 矽 region is formed. According to the sequential lateral solidification method described above, only two laser pulses are used and crystallized. This method is referred to herein as a two shot "processing" which shows the fact that only two laser pulses ("shots") are required to complete the crystallization. Further details of the two shots can be found in the name

The International Application for the Method for Producing Uniform Large-Grained and Grain Boundary Location Manipulated Polycrystalline Thin Film Semiconductors Using Sequential Lateral 3〇1丨£^卜&1丨011 is found in No. 1/18854 The content of the case is hereby incorporated by reference. In accordance with one or more embodiments of the present invention, a method for producing a thick film region having high electron mobility and a thin film region of low electron mobility is provided. An exemplary process is presented in flowchart 800 of Figure 8. In step 810, a film having at least two thicknesses is deposited on a substrate, wherein each base film thickness is to be provided with a different film 19 1376727

Characteristic crystalline region. In one or more embodiments, the film properties of interest are mobility; however, other film properties, such as crystal orientation, crystal size, and grain defects, may also be considered. Of course, the film can have more than two film thickness regions to provide more than two film properties.

The same thin film thickness region β such as 'the pixel control element is located in a thin film region, and the integrated component is a region where the film thickness is thick. The manufacture of thin film thicknesses is well known in the art. For example -*il? Xin XJv 丄 *.k- . > different

It is customary to use π门汗/冲冲叫发发 in this technique. For example, a film can be deposited uniformly throughout the substrate, after which the segments of the film are removed, such as etched or ground away, to form thicker and thinner film thickness regions. In certain exemplary embodiments, the film is etched back to expose the underlying substrate, & a second layer of semiconductor is deposited over the exposed substrate and the existing semiconductor layer to form - different thicknesses Or, the film is engraved to remove some, but not all, of the semiconductor material on the thin H region. In other exemplary embodiments, micro π浐t: is used to pattern the surface of the film 'subsequently' selectively removed by the removal of the patterned substrate in step 820, both as above ^ Degree, optical east uniformity ^ field beam condition (beam shape, beam energy conductor film thickness) and mask design are selected to process the key and the thickness of the thick or velocity μ illumination is not for the present invention deal with. If the lower film area is to be treated first, 4 they can be used in the same book below to generate a laser beam that is illuminated onto the surface generated by the one or more laser beam source beam sources. Figure 帛. A field beam can be split or turned to produce indirect

20 Lens H. A mask and/or laser beam can be used for each indirect laser beam. 'Plastic' is used to provide patterned small light having the desired characteristics. In step 830, 哕, 户,, 丄, ^, a thick semiconductor film region is irradiated for the crystallization region. The root zone "nB /j* b domain" In one or more embodiments of the invention, the zone of crystallography: sequential lateral solidification, and, in the firing process, is illuminated. The first junction to the crucible includes: a thick "film region" such that the film is crystallized to the edge of the film-bonding region of the film. The result of the edge melting is that the interface between the thick and the thin tension is Material flow; however, rapid recrystallization and surface hooding are thought to limit the flow of material. Or the entire thick film area can be separated by the area between the areas of the "thickness", and, Thin, film in step 8 3 5, the original dip = 3⁄4 „ address & no / thick film processing is completed will be determined. If - new 0 "this process will return to step 830 to handle the thick Formation of the film area, day: If the thick film area is crystallized, then the step is completed and the process proceeds to the next step. At step 840, two At* field beam conditions (beam shape, beam energy density: beam uniformity, etc.) and mask design are selected to process the semi-thin regions. The number of stages of illumination is not a critical step for the present invention to be treated in the thick film. For example, in the thick film m & during the process of being implemented by the real source, one or more laser beams are used for you. · 8S JU · X丨,. - Shoot on the surface of the child's film Laser beam pattern. A laser beam from a source can be used to separate the lightning beam for use in the housing, and each indirect laser beam can be used with a mask and/or laser. 21 1376727

The optical lens is shaped to provide a pattern of desired characteristics. In the step 850, the thin, semiconductor film region is illuminated to obtain a second crystalline region. In accordance with one or more embodiments of the present invention, the fields are illuminated in a sequential lateral curing process. ELA crystallization can also be used to provide a crystalline region of uniform grain structure. At step 855, if the thick film processing has been completed, it will be rejected, and the process will return to step 85 to process a new portion of the thick film. If it has been completed, then the process proceeds to step by step. Variations of the method can be accomplished within the scope of the present invention. For example, the first and second crystallization methods of the film may be the same or. In one or more embodiments of the present invention, thick film regions requiring higher electrical properties can be processed using techniques capable of producing elongated, grain boundary controlled grain structures, such as SLS, which are thin and thin. A less expensive technique, such as UGS crystallization, can be used to treat one or more embodiments of the crucible, which, thick, and/or thin, are treated. The remaining untreated regions are maintained in the state of being deposited, such as amorphous or small grained polymorphic states. The size and position of the processed, untreated regions of the thick, thin "area" are selected to correspond to the position at which the component will be positioned on the film. For example, using the same crystallization technique, The masks used for the second illumination may be the same or different. When the same time, the illumination conditions are typically changeable. For example, the above-mentioned "second" step and two-step processing can be used for two films. Thickness area j; cased shot, the area and UGS. For example, % 860 ° of the area, for example, moving the position of the film area with a different sub-portion, a part of the crystal form 'and/or ' can be added first and the mask is, η . At some 22 1376727

In some embodiments, the first and second illuminations use different masks. For example, the orientation of the mask features can be varied such that the growth of the crystals advances in different directions of the film. The mask direction can be changed by rotating the mask or the substrate table on which the sample is placed or by using a different mask.

In some embodiments, laser features, such as the shape and energy density of the laser beam, can be varied such that different regions of the film are characterized by different energy beams, such as beam energy rim (density), beam shape, beam. The laser beam characteristics of the laser beam delivered to the film by the pulse duration, etc., can be transmitted through optical components such as lenses, homogenizers, attenuators, and inverse amplification. Optical lenses and the like, as well as the configuration and orientation of a mask, are controlled and modulated. The energy beam characteristics of the delivered laser beam can thus be adjusted for the particular processing requirements of the portion of the film being illuminated. By modulating the energy beam characteristics of the laser beam in accordance with the specific processing requirements of the portion of the film to be illuminated, the output energy of the laser source can be more efficiently applied to the crystallization manufacturing process, which can result in a pear at the film. Shorten or reduce the energy required for processing. Thus, the laser beam can be controlled and modulated such that different regions of the film having different processing requirements can be illuminated by laser beams having different energy beam characteristics. For example, the "thin" portion of the amorphous film layer can be illuminated by a laser beam having a particular energy beam characteristic, while the "thick" portion of the film can be exposed to a laser beam having a different energy beam characteristic. Laser beams having different energy beam characteristics can be generated and delivered to the 23 1376727 amorphous germanium film by utilizing a system having a single optical path or having multiple optical paths. The term optical path as used herein refers to the orbit of a laser beam as it is moved from a laser beam source to a film sample. Thus, the optical path extends through both the illumination and projection portions of the exemplary system. Each optical path has at least one optical element that is operable to control the energy beam characteristics of a laser beam that is directed along the optical path.

In systems having a single optical path, one or more optical components and masks, if any, can be adjusted, inserted or replaced in the optical path to provide laser beams having different energy beam characteristics. In addition, the orientation of the substrate relative to the incident laser beam can also be adjusted to efficiently produce laser beams having different energy beam characteristics. For example, the system can include a mask that can be rotated through a mask holder. The mask is held in a first position for performing a first portion of the enamel film, and then the mask is rotated to a second position, such as 90 degrees, for performing a film of the ruthenium film The second part of the irradiation process. The system can also include two shrouds having different mask shapes that are held on a mask holder. In order to illuminate a first portion of the enamel film, the first mask is aligned with the laser beam optical path through the mask holder. In order to illuminate a second portion of the enamel film, the second mask passes through the mask holder, such as the hood holder can be a rotatable dish-shaped bracket that is aligned with the optical path of the laser beam . In this way, laser beams having different energy beam characteristics can thus be generated and delivered to the amorphous germanium film on the same optical path. Other front-end systems include an adjustable demagnification optical component. In order to generate a laser beam having different energy beam characteristics, the adjustable inversely amplified optical element is set to a first magnification during illumination of a portion of the amorphous germanium film of 24 1376727, and then irradiated the amorphous The period of the other portion of the ruthenium film is set to a different magnification.

Producing a laser beam having different energy beam characteristics along a single optical path causes the crystallization processing time to become longer because the irradiation of the irradiation energy to the amorphous wafer is interrupted to modulate the energy beam characteristics. In this example, a system with a single optical path may not be advantageous because of changes in optical components, mask configuration or orientation, or substrate orientation, etc. to facilitate adjustment of the energy beam characteristics of the laser beam. The duty cycle of the delivered laser energy is greatly reduced. In one or more embodiments and in order to produce a laser beam having different energy beam characteristics while maintaining an acceptable illumination duty cycle, the system for illuminating the film sample can include a plurality of optical paths. As shown in FIG. 9, in some embodiments, the system can include two optical paths for controlling and modulating the laser light, each optical path including the necessary optical components, such as a beam homogenizer. , an anti-amplifying optical lens, mirror, lens, etc., and (optionally) a mask for modulating the energy beam characteristics of the laser beam and directing the laser beam to portions of the film to enable crystallization Was promoted. Thus, the dual (or multiple) optical path system can be used to generate laser beams having different energy beam characteristics that are used to illuminate (i.e., melt) and crystallize different regions of the film sample. Thus, the first laser beam having the first set of energy beams is generated and delivered through a first optical path. A selected portion of the film is irradiated with the first laser beam using a first crystallization process to obtain a first crystalline region. Then, the second laser beam is re-read by 25 1376727 id?fJ. - - is directed to a second optical path for generating a second laser beam having a second set of energy beams. A selected portion of the film is irradiated with the second laser beam using a second crystallization treatment to obtain a second crystallization region. These crystalline regions correspond to regions of the film having different film thicknesses. The crystalline regions may be polymorphic or have a large single crystal domain (domain) 0

An exemplary apparatus having dual optical paths that can generate and deliver laser beams having different energy beam characteristics is shown in FIG. Referring to Figure 9, system 900 includes a laser source 220, an attenuator 910, a telescope 920, a homogenizer 930', a concentrating lens 940, and a beam steering element 950. The laser beam 240 generated by the laser source 220 is directed to the beam steering element 950 via the attenuator 910, the telescope 920, the homogenizer 930', and the collecting lens 94'. The attenuator 910 (which can be operated with a pulsed time extender) can be a variable attenuator, such as having a dynamic range of 1 〇 to i, which is capable of adjusting the energy of the generated laser beam 24 〇 density.

The telescope 920 can be used to efficiently transform the beam wheel of the laser beam 24 成 to accommodate the uniform n 930 aperture. The homogenizer 93 can be constructed with a two lens array (two lens arrays per beam axis) which produces a laser beam 24 具 with a uniform scoring of 13⁄4 degrees. The concentrating lens 94 聚焦 focuses the laser ^ Dong 240 onto the downstream optical element. At the beam steering element 950, the incoming laser beam 24 is guided on one of the two beam paths & _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The base 26 on the table 270 is operated. The first optical path includes a mirror %. , a zoomable field (fie) 26 1376727

The year's joiua 曰 correction replacement page, the tomb < 8 ~ lens 970a, a mask 280a and a projection lens 295a, and the second optical path includes 'a zoomable field (fle) lens 970b, a mask 280b And a projection lens 295b. The masks 28A and 28B are typically mounted on a shade table (not shown) that accurately positions the mask relative to the incoming laser beam 240. The laser beam 240 traveling along two different optical paths will pass through optical elements having different optical properties. For example, in one embodiment, the mask 202a on the first optical path has a different mask configuration than the mask 280b on the second optical path. Thus, the laser beam 240a directed onto the region 265a of the substrate 260 via the first optical path will have an energy beam characteristic that is different from the laser beam 240b directed onto the region 265b of the substrate 260 via the second optical path. The energy beam characteristics. Region 265a' 265b has a different film thickness. In some embodiments, the beam steering element 950 can have two modes: a transmissive or feedthrough mode and a reflective or redirected mode. When operating in the through mode, the laser entering the beam steering element 950 The beam 240 will pass completely through the beam steering element 950 to a first optical path. When operating in a redirect mode, the laser beam 240 entering the beam steering element 95 0 will be completely reflected. Redirected to a second optical path.

The wafer handling table 270 is capable of accurately positioning the substrate relative to the incoming laser beam 24A, 240b. As mentioned above, the film (e.g., amorphous germanium) is deposited on the surface of the substrate 260 in a controlled manner. By using two separate optical paths, system 900 can have laser beams 240a, 240b having different energy east characteristics in place on the substrate 27 1376727 ΙοΛη曰柯

Different parts of the film on 260. For example, a laser beam 240 can be directed to the first optical path via the beam steering element 950 such that a laser beam 240a having a first energy beam characteristic is generated and directed onto a particular region of the film. The laser beam 240 can then be directed to the second optical path via the beam steering element 905 such that a laser beam 24 Ob having a second energy beam characteristic is generated and directed onto different regions of the film. Thus, by coordinating the generation of the laser beam 240 (via a computer), the operation of the beam steering element 950 and the positioning of the substrate 260, it is possible to assist in the delivery of laser beams 240a and 240b (having different energy beam characteristics) to the film. Different parts.

In other exemplary embodiments, a plurality of laser sources and a plurality of optical paths, as described above, may be used. Each laser source produces a laser beam that is directed along a respective optical path to produce a laser beam having a particular beam characteristic. The laser beam is then directed through the optical path to a region of the film. For example, a laser beam from the laser source can be directed along the first optical path such that a laser beam having a first beam characteristic is generated and delivered to portions of the film, A laser beam from the second source of laser light can be directed along the second optical path such that a laser beam having a second beam characteristic is generated and delivered to the remainder of the film. This is shown schematically in Figure 1, where two laser sources are shown as 1010a and 1010b. As is known in the art, the optical elements of optical paths 1 030a, 1 030b can be arranged differently and can include all of the optical elements mentioned herein, such as beam homogenizers, inverse magnifiers, mirrors, lenses, and the like. Or one. By laser source 28 1376727

The laser beam generated by 1010a moves along optical path 1030a (thus producing a laser beam having certain energy beam characteristics and being delivered to the "thin" region 1020a of the film. Produced by laser source l〇l〇b The laser beam travels along optical path 1030b (thus producing a laser beam having certain energy beam characteristics and being delivered to the "thick" region 1 020b of the film. In some embodiments, it is delivered to" The energy beam characteristics of the laser beam on the thin ''area 1020a' are different from the energy beam characteristics of the laser beam delivered to the "thick" area 1 020b. Some implementations of the system shown in Figure 10. In one example, the treatment of the "thin" region 1020a of the film is performed before or after processing of the "thick" region 1020b of the film. However, in certain embodiments of the system illustrated in Figure 10, The treatment of the "thin" region 1 020a of the film is performed simultaneously with the processing of the "thick" region l 20b of the film.

In some embodiments, a plurality of laser systems, each of which uses a plurality of optical paths, can be used. In these embodiments, different laser systems may be constructed from one or more laser sources. In these embodiments, different laser systems can be used to process different regions of the film. For example, a laser source from a laser source of a first laser system and a laser source from a second laser system can be directed along two different optical paths for processing one of the films "Thick" area. The laser beam produced by the first laser system can be directed to a respective optical path via a beam director or a beam splitter depending on whether the generated laser beam is to be split. The laser beam of the second laser system can be processed and operated in the same manner. The laser beams directed onto the "thin" area may have the same or different energy beam characteristics. Similarly, a laser beam directed onto a "thin" region may have the same or different energy beam characteristics of phase 29 1376727. An exemplary embodiment having two separate laser systems 12i〇a and 1210b and corresponding beam splitters 1230a'1230b is shown in FIG. Laser beams 1220a, 1220b produced by laser systems 1210a, 121 Ob pass through beam splitters 1230a, 1230b, respectively. Beam splitting

The device l230a directs a portion of the laser beam 122A to the optical path 1240a and directs the remainder of the laser beam 1220a onto the optical path 12 40a such that the two energy beams (which may be the same or different) The energy beam characteristics can simultaneously illuminate different portions of the "thin" region of the film 1 250. Similarly, beam splitter Ob 23 Ob directs a portion of laser beam 1220b onto optical path 1260a and directs the remainder of laser beam 1 220b onto optical path 1 260b such that the two energy beams The same or different energy beam characteristics can be used to simultaneously illuminate the "thick" portion of the film, on different portions of the zone 1280.

In other embodiments, the beam splitter can operate as a beam steering element, either in a transmissive or feedthrough mode and in a reflective or redirected mode. When operating in the feedthrough mode, the laser beam entering the beam steering element will completely pass through the beam steering element to a first optical path. And when operating in a redirect mode, the laser beam entering the beam steering element will be completely redirected by a reflective surface to a second optical path. Further details are provided in conjunction with the present case. In the provisional application titled "System And Methods For Inducing Crystallization of Thin Films Using Multiple Optical Paths", and in conjunction with this case, the common name is ''System and 30 1376727'

In the provisional application of Methods For Processing Thin Films, the contents of this application are hereby incorporated by reference. The semiconductor device made by the present invention is not only a component such as a TFT or MOS transistor. It may also be a liquid crystal display device (Tft-LCD), an EL (electroluminescence) display device 'EC (electronic chrome) display device, an active array organic light emitting diode (OLED) 'static random access memory (SRAM) device, = Integral circuit (3-D 1C) 'resonator, printer, and light valve, etc., each of which includes a semiconductor device consisting of an insulated gate transistor, micro-processing, signal processing circuit' High frequency circuits, etc.) Although various embodiments incorporating the teachings of the present invention have been shown and described in detail herein, it will be readily apparent to those skilled in the art BRIEF DESCRIPTION OF THE DRAWINGS [Brief Description of the Drawings] The objective application of the intermediate phase is divided into different purposes for the implementation of the present invention. The features and benefits can be referred to the detailed description of the present invention in conjunction with the accompanying drawings. The same reference numerals are used to refer to the same elements. The following drawings are for illustrative purposes only and are not intended to limit the scope of the invention. The scope of the invention is defined by the scope of the patent. A cross-sectional view of a film having a film thickness region in accordance with one or more embodiments of the present invention. Figure 2A shows a laser ablation process in accordance with one or more embodiments of the present invention; One for implementing one or more 31 1376727 in accordance with the present invention

A schematic of an exemplary system for sequential lateral solidification of a Mg page change. Figure 3 shows a mask used in sequential lateral curing in accordance with one or more embodiments of the present invention. Figure 4 shows a step in a sequential lateral curing process in accordance with one or more embodiments of the present invention. Figure 5 shows a step in a sequential lateral curing process t in accordance with one or more embodiments of the present invention.

Figure 6 shows a step in a sequential lateral curing process in accordance with one or more embodiments of the present invention. Figures 7A through 7C show sequential lateral curing processes in accordance with one or more embodiments of the present invention. Figure 8 is a flow diagram of an exemplary embodiment of a process in accordance with the present invention in which different thickness regions of the film are processed. Figure 9 is a schematic illustration of an apparatus for using two optical paths having a single laser in one or more embodiments of the present invention.

Figure 10 is a schematic illustration of an apparatus having two laser systems and two optical paths using one of the one or more embodiments of the present invention. Figure 11 is a schematic illustration of an apparatus having two laser systems, each having two optical paths, in one or more embodiments of the present invention. [Main component symbol description] 100 film object 110 film 120 substrate 1 25,1 30 area 32 1376727

Positive f-page 150 Beam 160 Width 170 Length 180 Semiconductor film 200 Equipment 220 Laser source 240 Laser beam 260 Substrate 270 Table 280 Mask 290 Mask holder 295 Projection lens 265 Location 3 3 Mask 320 Slit 340 Slit spacing 360 Width 400 Area 460 Rectangular area 480 Center line 500 Processed area 520 Crystal boundary 710, 711, 712 Irradiated area 721 Pitch 730 Melting boundary 740 Polymorph 矽 742 Amorphous area 745 Central section 900 System 910, 910a , 910b attenuator 920, 920a, 920b telescope 930, 930a, 930b homogenizer 940, 940a, 940b concentrating lens 950 beam steering element 960 mirror 970a, 970 variable focus field lens 280a, 280b mask 295a, 295b projection lens 240a, 240b, 1220a, 1220b laser beam 1000 system 1010a, 1010b laser source 1020a, 1250 thin area 1020b, 1 280 thick area 1 030a, 1 030b ' 1240a' 1240b, 1260a, 1260b optical path 1210a, 1210b laser system 1 230a, 1230b Beam splitter

33

Claims (1)

1376727 Mo曰f正, PAGE 丨申范痛 1. A method of processing a film, the method comprising at least the following steps: (a) generating a first laser beam pattern from a pulsed laser beam, the first The intensity of the laser beam pattern is sufficient to at least partially melt at least a portion of a first region of the film to be crystallized; (b) generating a second laser beam pattern from a pulsed laser beam, the second laser beam pattern having an intensity sufficient to at least partially melt at least a portion of a second region of the film to be crystallized The first region of the film includes a first thickness, and the second region of the film includes a second thickness, and the first thickness and the second thickness are different; (c) using the first a set of beam patterns illuminating the first region of the film to form a first crystalline region having a first grain structure; and (d) illuminating the second region of the film with the second set of beam patterns to Forming a two-crystal region with a two-grain structure. 2. The method of claim 1, wherein the film comprises a semiconductor material. 3. The method of claim 1, wherein the film comprises a metal. 4. The method of claim 1, wherein the first laser beam pattern and the second laser beam pattern are generated using a single laser beam source 34 1376727. 5. The method of claim 1, wherein the first laser beam pattern and the second laser beam pattern are generated using a plurality of laser beam sources. 6. The method of claim 1, wherein the first laser beam pattern comprises a set of patterned beamlets. 7. The method of claim 1, wherein the second laser beam pattern comprises a set of patterned small beams. 8. The method of claim 1, wherein the step of illuminating the first region and the second region of the film occurs simultaneously. 9. The method of claim 1, wherein the step of illuminating the first region and the second region of the film occurs sequentially. The method of claim 1, further comprising the step of: repositioning the first laser beam pattern on the film after step (c) to illuminate the film a second portion of the first region, and the first region that illuminates the film as in step (c), the re-35 1376727_I铋ίο日正, 1 positioning and illumination step occurs at least once; and After step (d), repositioning the second laser beam pattern on the film to illuminate a second portion of the second region of the film and illuminating the film as in step (d) The second region, the repositioning and illumination steps occur at least once. 11. The method of claim 10, wherein the repositioning occurs by moving a mask, a film, or both. 1 2. The method of claim 10, wherein the repositioned laser beam illuminates a portion of the film that overlaps a previously illuminated portion. The method of claim 12, wherein the repositioned laser beam is at a distance from the previously positioned laser beam that is less than the lateral crystal growth of the crystalline material. 14. The method of claim 1, wherein the step of irradiating the first region and the second region by the laser comprises a sequential lateral solidification treatment (SLS) ° 36 1 5. The method of claim 1, wherein the film thickness of the first region is greater than the film thickness of the second region. 1 6 · The patented range 1st beam pattern is generated using a laser beam according to a first shape, using a method according to a second mask and a first beam of β $, wherein a laser that is shaped by the first Ray-mask and a first set of laser features and the second laser beam pattern is a set of laser features 1 7. The method of claim i, wherein a single source of laser beam is used, and the laser light is said to be guided through the first set of laser optical sheets. Illuminating the first film region and being guided through the second set of laser optics to illuminate the second film region. 18. The method of claim 16, wherein a plurality of laser beam sources are used, and a first laser beam source is directed through the first set of laser optics to illuminate the first film The area, and - the second laser beam source is guided?丨 passing the second set of laser optics to illuminate the second film area. 19. The method of claim 16, wherein the masks for the first laser beam pattern and the second laser beam pattern are different. 20. The method of claim 16, wherein the shape of the hoist-laser beam pattern and the second laser beam pattern are 37 176 727 月 修 i replacement page iftfl . ίο, 14-β~ is not the same. 21. The method of claim 4, wherein the source of the laser beam is selected from the group consisting of a continuous wave laser, a solid state laser, and an excimer laser. 22. The method of claim 5, wherein the source of the laser beam is selected from the group consisting of a continuous wave laser, a solid state laser, and an excimer laser. The method of claim 1, wherein the irradiation conditions of the first film region and the second film region are suitable for use in sequential laser curing, laser laser annealing, and uniform grain size. The irradiation conditions of at least one of the treatments such as structural crystallization are selected. 24. The method of claim 23, wherein the first illuminating film region condition is suitable for sequential laser curing treatment, and the second film region illuminating condition is suitable for uniform grain structure crystallization treatment. 25. A film on a substrate comprising: - a first crystalline region having a first film thickness and a crystalline grain structure 1 having a first crystal grain An extremely elongated crystalline grain defined by a grain boundary, the first set of grain boundaries being substantially parallel to a major axis of the grains; and a second crystalline zone having a second film thickness 38 1376727 The mass is uniform and the crystal is crystallized to form the g crystal, and the crystal is crystallized and crystallized, and the first crystal is crystallized, and the axis is long. The long grain boundary is equal to the thick side of the film. The grain is flat and the second layer is on the first layer. The first boundary is on the one side. The grain size has a crystal thickness and the film is a thin junction. The elemental energy of the elemental phase is the same as that of the domain area. The domain of the zone is the main zone of the zone. The zone has a zone with a central zone and a crystallographic dimension. The domain of the body crystal is less than the domain area. The second trap is lacking, and there is a lesser interest in the application or the i and 26 domain areas. The crystal is the first knot. The first piece of the structure is included in the structure. The domain area BB Fan J. .1 is the main structure of the -6 其 23 23 23 -6 -6 -6 -6 -6 -6 -6 -6 -6 -6 -6 -6 -6 -6 -6 -6 -6 -6 -6 请 请 请 请 请 请 请 271 271 271 271 271 The film of claim 25, wherein the first crystal region of the film has an electron mobility greater than an electron mobility of the second crystal domain of the film. 29. The film of claim 25, wherein the film y the first crystalline region comprises a primary channel for a highly mobile thin film transistor. 39. The film of claim 29, wherein the second crystalline region of the film comprises an active channel for a low mobility, a thin film transistor. The film of claim 25, wherein at least one of the first crystal grain structure and the second crystal grain structure comprises an elongated grain boundary controlled grain size structure. The film of claim 25, wherein the film comprises a semiconductor material. The film of claim 25, wherein the film comprises a metal. The film of claim 25, wherein the first film thickness is in the range of 50 nm to 500 nm. 35. The film of claim 25, wherein the second film thickness is within a range of from about 20 nm to about 200 nm. 3. The film of claim 25, wherein the first crystalline region and/or the second crystalline region comprises a single crystal sub-region having a large enough diameter to accommodate a film One inch of the active channel of the transistor is 40 1376727 inches. 3. The film of claim 25, wherein the second crystalline region comprises elongated crystalline grains defined by a first set of grain boundaries, the first set of grain boundaries being substantially parallel to The long axis of the grains. 3. The film of claim 25, wherein the second crystalline region comprises elongated crystalline grains defined by a first set of grain boundaries and a second set of grain boundaries, the first A set of grain boundaries are substantially parallel to the major axes of the grains. The second set of grain boundaries are substantially perpendicular to the major axes of the grains to define a column of elongated crystals. The film of claim 25, wherein the second crystal region comprises a homogeneous small crystal grain polycrystalline grain structure. The film of claim 25, wherein the elongated crystal grains of the first crystalline region further comprise a second crystal grain group, the boundary of the second crystal grain group being substantially A column of elongated crystals is defined perpendicular to the major axes of the grains. The film of claim 40, wherein the second crystalline region comprises elongated crystalline grains defined by a first set of grain boundaries, the first set of grain boundaries being substantially parallel On the long axis of the grains. The film of claim 40, wherein the second crystal region comprises a homogeneous (h 〇 m 〇 g e n e 〇 u s ) small crystal polycrystalline grain structure. 43. The film of claim 40, wherein the second crystalline region comprises elongated crystalline grains defined by a first set of grain boundaries and a second set of grain boundaries, the first The set of grain boundaries are substantially parallel to the major axes of the grains, and the boundaries of the second set of grains are substantially perpendicular to the major axes of the grains to define a column of elongated crystals. 44. A device comprising: at least: a plurality of thin film transistors (TFTs) each having a thin film active channel; wherein at least one first TFT active channel has a first thickness and at least one second TFT active channel has a second thickness of the first TFT active channel having an extremely elongated crystal grain defined by a first set of grain boundaries, the first group of grain boundaries being substantially parallel to the crystal a long axis of the particle, the second TFT active channel having a homogeneous small grain polycrystalline grain structure and a crystalline grain structure having a first set of grain boundaries Defining the elongated crystal grains, the first set of grain boundaries are substantially parallel to the long axes of the grains, and the electron mobility of the second active channel is greater than the electron mobility of the first active channel. The apparatus of claim 44, wherein the first TFT active channel includes an active channel for the integrated region TFT. 46. The device of claim 44, wherein the second TFT active channel comprises an active channel for the pixel region TFT. 4. The device of claim 44, wherein the film comprises a semiconductor material. 48. The device of claim 44, wherein the first crystalline region and the second crystalline region comprise a single crystal sub-region having an active channel large enough to accommodate a TFT. One size. 43