JP2015516694A - 薄膜の改良型エキシマレーザアニーリング - Google Patents

薄膜の改良型エキシマレーザアニーリング Download PDF

Info

Publication number
JP2015516694A
JP2015516694A JP2015512645A JP2015512645A JP2015516694A JP 2015516694 A JP2015516694 A JP 2015516694A JP 2015512645 A JP2015512645 A JP 2015512645A JP 2015512645 A JP2015512645 A JP 2015512645A JP 2015516694 A JP2015516694 A JP 2015516694A
Authority
JP
Japan
Prior art keywords
thin film
film
region
pulse
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015512645A
Other languages
English (en)
Japanese (ja)
Inventor
ジェームス エス アイエム
ジェームス エス アイエム
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Columbia University of New York
Original Assignee
Columbia University of New York
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Columbia University of New York filed Critical Columbia University of New York
Publication of JP2015516694A publication Critical patent/JP2015516694A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
JP2015512645A 2012-05-14 2013-03-14 薄膜の改良型エキシマレーザアニーリング Pending JP2015516694A (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US201261646480P 2012-05-14 2012-05-14
US61/646,480 2012-05-14
US201261659517P 2012-06-14 2012-06-14
US61/659,517 2012-06-14
US201261674017P 2012-07-20 2012-07-20
US61/674,017 2012-07-20
US201261692316P 2012-08-23 2012-08-23
US61/692,316 2012-08-23
US201213505961A 2012-12-06 2012-12-06
US13/505,961 2012-12-06
PCT/US2013/031732 WO2013172965A1 (fr) 2012-05-14 2013-03-14 Recuit perfectionné au laser à excimère pour films minces

Publications (1)

Publication Number Publication Date
JP2015516694A true JP2015516694A (ja) 2015-06-11

Family

ID=49584138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015512645A Pending JP2015516694A (ja) 2012-05-14 2013-03-14 薄膜の改良型エキシマレーザアニーリング

Country Status (5)

Country Link
JP (1) JP2015516694A (fr)
KR (1) KR20150013731A (fr)
CN (1) CN104379820A (fr)
TW (1) TW201346993A (fr)
WO (1) WO2013172965A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013120936A (ja) 2011-12-07 2013-06-17 Ultratech Inc パターン効果を低減したＧａＮＬＥＤのレーザーアニール
JP6471379B2 (ja) * 2014-11-25 2019-02-20 株式会社ブイ・テクノロジー 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置
CN104966981B (zh) 2015-07-14 2018-03-13 京东方科技集团股份有限公司 激光器
US10858218B2 (en) 2015-07-22 2020-12-08 Mitsubishi Electric Corporation Elevator apparatus
GB201614342D0 (en) * 2016-08-22 2016-10-05 M-Solv Ltd An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004280054A (ja) * 2003-03-13 2004-10-07 Samsung Sdi Co Ltd 薄膜トランジスタを備えた平板表示装置
JP2006516356A (ja) * 2002-08-19 2006-06-29 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク エッジ領域を最小にするために基板のフィルム領域のレーザ結晶化処理方法及び装置並びにそのようなフィルム領域の構造
US20070010104A1 (en) * 2003-09-16 2007-01-11 Im James S Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
JP2008040192A (ja) * 2006-08-08 2008-02-21 Sony Corp 表示装置および表示装置の製造方法
WO2011056787A1 (fr) * 2009-11-03 2011-05-12 The Trustees Of Columbia University In The City Of New York Systèmes et procédés de traitement de couche mince partiellement fondue à impulsions non périodiques
JP2012508985A (ja) * 2008-11-14 2012-04-12 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄膜の結晶化のためのシステムおよび方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI282126B (en) * 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
CN1315163C (zh) * 2004-03-08 2007-05-09 友达光电股份有限公司 激光退火装置及其激光退火方法
JP2009505432A (ja) * 2005-08-16 2009-02-05 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄膜のハイ・スループット結晶化
US8598588B2 (en) * 2005-12-05 2013-12-03 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
US8440581B2 (en) * 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006516356A (ja) * 2002-08-19 2006-06-29 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク エッジ領域を最小にするために基板のフィルム領域のレーザ結晶化処理方法及び装置並びにそのようなフィルム領域の構造
JP2004280054A (ja) * 2003-03-13 2004-10-07 Samsung Sdi Co Ltd 薄膜トランジスタを備えた平板表示装置
US20070010104A1 (en) * 2003-09-16 2007-01-11 Im James S Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
JP2008040192A (ja) * 2006-08-08 2008-02-21 Sony Corp 表示装置および表示装置の製造方法
JP2012508985A (ja) * 2008-11-14 2012-04-12 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄膜の結晶化のためのシステムおよび方法
WO2011056787A1 (fr) * 2009-11-03 2011-05-12 The Trustees Of Columbia University In The City Of New York Systèmes et procédés de traitement de couche mince partiellement fondue à impulsions non périodiques

Also Published As

Publication number Publication date
CN104379820A (zh) 2015-02-25
KR20150013731A (ko) 2015-02-05
TW201346993A (zh) 2013-11-16
WO2013172965A1 (fr) 2013-11-21

Similar Documents

Publication Publication Date Title
US9646831B2 (en) Advanced excimer laser annealing for thin films
US9087696B2 (en) Systems and methods for non-periodic pulse partial melt film processing
US6635932B2 (en) Thin film crystal growth by laser annealing
US7645337B2 (en) Systems and methods for creating crystallographic-orientation controlled poly-silicon films
TWI575571B (zh) 部分熔融膜之非週期性脈衝處理系統及方法
US8598588B2 (en) Systems and methods for processing a film, and thin films
US8802580B2 (en) Systems and methods for the crystallization of thin films
JP5068171B2 (ja) 結晶方位制御ポリシリコン膜を生成するためのシステム及び方法
US8440581B2 (en) Systems and methods for non-periodic pulse sequential lateral solidification
JP2004311935A (ja) 単結晶シリコン膜の製造方法
TWI352392B (en) Systems and methods for optimizing the crystalliza
JP2015516694A (ja) 薄膜の改良型エキシマレーザアニーリング
EP2504059A1 (fr) Systèmes et procédés pour solidification latérale séquentielle à impulsions non périodiques
JP2007281421A (ja) 半導体薄膜の結晶化方法
JP2007281420A (ja) 半導体薄膜の結晶化方法
JP2007281465A (ja) 多結晶膜の形成方法
KR20120082022A (ko) 비-주기적 펄스 부분 용융 막가공을 위한 시스템 및 방법
EP2497105A1 (fr) Systèmes et procédés de traitement de couche mince partiellement fondue à impulsions non périodiques
TWI556284B (zh) 非週期性脈衝連續橫向結晶之系統及方法
Paetzel et al. Laser annealing of LTPS

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160225

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170208

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170221

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20170919