WO2013172965A1 - Recuit perfectionné au laser à excimère pour films minces - Google Patents

Recuit perfectionné au laser à excimère pour films minces Download PDF

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Publication number
WO2013172965A1
WO2013172965A1 PCT/US2013/031732 US2013031732W WO2013172965A1 WO 2013172965 A1 WO2013172965 A1 WO 2013172965A1 US 2013031732 W US2013031732 W US 2013031732W WO 2013172965 A1 WO2013172965 A1 WO 2013172965A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
device formation
region
regions
column
Prior art date
Application number
PCT/US2013/031732
Other languages
English (en)
Inventor
James S. Im
Original Assignee
The Trustees Of Columbia University In The City Of New York
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Trustees Of Columbia University In The City Of New York filed Critical The Trustees Of Columbia University In The City Of New York
Priority to JP2015512645A priority Critical patent/JP2015516694A/ja
Priority to KR1020147034500A priority patent/KR20150013731A/ko
Priority to US14/401,476 priority patent/US9646831B2/en
Priority to CN201380032042.7A priority patent/CN104379820A/zh
Publication of WO2013172965A1 publication Critical patent/WO2013172965A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

Abstract

La présente invention concerne une nouvelle génération d'approches de cristallisation par laser qui permet de cristalliser des films de Si pour de grands affichages à des vitesses de cristallisation efficaces accrues de façon spectaculaire. Le projet particulier présenté dans cet aspect de l'invention est désigné comme procédé de recuit perfectionné au laser à excimère (AELA) et il peut facilement être configuré pour fabriquer des grandes télévisions à diodes électroluminescentes organiques à l'aide de divers composants techniques disponibles et éprouvés. Comme en ELA, c'est principalement une approche de cristallisation à base de régime de fusion partielle/presque complète qui peut cependant atteindre finalement une augmentation supérieure à un ordre de grandeur dans la vitesse efficace de cristallisation par rapport à celle de la technique ELA classique utilisant la même source laser.
PCT/US2013/031732 2009-11-03 2013-03-14 Recuit perfectionné au laser à excimère pour films minces WO2013172965A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015512645A JP2015516694A (ja) 2012-05-14 2013-03-14 薄膜の改良型エキシマレーザアニーリング
KR1020147034500A KR20150013731A (ko) 2012-05-14 2013-03-14 박막들을 위한 개선된 엑시머 레이저 어닐링
US14/401,476 US9646831B2 (en) 2009-11-03 2013-03-14 Advanced excimer laser annealing for thin films
CN201380032042.7A CN104379820A (zh) 2012-05-14 2013-03-14 薄膜的改进型准分子激光退火

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US201261646480P 2012-05-14 2012-05-14
US61/646,480 2012-05-14
US201261659517P 2012-06-14 2012-06-14
US61/659,517 2012-06-14
US201261674017P 2012-07-20 2012-07-20
US61/674,017 2012-07-20
US201261692316P 2012-08-23 2012-08-23
US61/692,316 2012-08-23
US201213505961A 2012-12-06 2012-12-06
US13/505,961 2012-12-06

Publications (1)

Publication Number Publication Date
WO2013172965A1 true WO2013172965A1 (fr) 2013-11-21

Family

ID=49584138

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2013/031732 WO2013172965A1 (fr) 2009-11-03 2013-03-14 Recuit perfectionné au laser à excimère pour films minces

Country Status (5)

Country Link
JP (1) JP2015516694A (fr)
KR (1) KR20150013731A (fr)
CN (1) CN104379820A (fr)
TW (1) TW201346993A (fr)
WO (1) WO2013172965A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9190570B2 (en) 2009-11-06 2015-11-17 Ultratech, Inc. Laser annealing of GaN LEDs with reduced pattern effects
JP2016100537A (ja) * 2014-11-25 2016-05-30 株式会社ブイ・テクノロジー 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置
GB2553162A (en) * 2016-08-22 2018-02-28 M Solv Ltd An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104966981B (zh) 2015-07-14 2018-03-13 京东方科技集团股份有限公司 激光器
DE112015006721T5 (de) 2015-07-22 2018-04-12 Mitsubishi Electric Corporation Aufzugsvorrichtung

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030059990A1 (en) * 2001-08-30 2003-03-27 Shunpei Yamazaki Method for manufacturing semiconductor device
US20030068836A1 (en) * 2001-10-10 2003-04-10 Mikio Hongo Laser annealing apparatus, TFT device and annealing method of the same
US20070010104A1 (en) * 2003-09-16 2007-01-11 Im James S Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US20090001523A1 (en) * 2005-12-05 2009-01-01 Im James S Systems and Methods for Processing a Film, and Thin Films
US20090218577A1 (en) * 2005-08-16 2009-09-03 Im James S High throughput crystallization of thin films
US20110121306A1 (en) * 2009-11-24 2011-05-26 The Trustees Of Columbia University In The City Of New York Systems and Methods for Non-Periodic Pulse Sequential Lateral Solidification
US20110309370A1 (en) * 2008-11-14 2011-12-22 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100459041C (zh) * 2002-08-19 2009-02-04 纽约市哥伦比亚大学托管会 激光结晶处理薄膜样品以最小化边缘区域的方法和系统
KR100490552B1 (ko) * 2003-03-13 2005-05-17 삼성에스디아이 주식회사 박막 트랜지스터를 구비한 평판표시장치
CN1315163C (zh) * 2004-03-08 2007-05-09 友达光电股份有限公司 激光退火装置及其激光退火方法
JP5034360B2 (ja) * 2006-08-08 2012-09-26 ソニー株式会社 表示装置の製造方法
MX2012005204A (es) * 2009-11-03 2012-09-21 Univ Columbia Sistemas y metodos para el procesamiento de peliculas por fusion parcial mediante pulsos no periodicos.

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030059990A1 (en) * 2001-08-30 2003-03-27 Shunpei Yamazaki Method for manufacturing semiconductor device
US20030068836A1 (en) * 2001-10-10 2003-04-10 Mikio Hongo Laser annealing apparatus, TFT device and annealing method of the same
US20070010104A1 (en) * 2003-09-16 2007-01-11 Im James S Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
US20090218577A1 (en) * 2005-08-16 2009-09-03 Im James S High throughput crystallization of thin films
US20090001523A1 (en) * 2005-12-05 2009-01-01 Im James S Systems and Methods for Processing a Film, and Thin Films
US20110309370A1 (en) * 2008-11-14 2011-12-22 The Trustees Of Columbia University In The City Of New York Systems and methods for the crystallization of thin films
US20110121306A1 (en) * 2009-11-24 2011-05-26 The Trustees Of Columbia University In The City Of New York Systems and Methods for Non-Periodic Pulse Sequential Lateral Solidification

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9190570B2 (en) 2009-11-06 2015-11-17 Ultratech, Inc. Laser annealing of GaN LEDs with reduced pattern effects
JP2016100537A (ja) * 2014-11-25 2016-05-30 株式会社ブイ・テクノロジー 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置
CN107004604A (zh) * 2014-11-25 2017-08-01 株式会社V技术 薄膜晶体管、薄膜晶体管的制造方法以及激光退火装置
US10211343B2 (en) 2014-11-25 2019-02-19 V Technology Co., Ltd. Thin film transistor, manufacturing process for thin film transistor, and laser annealing apparatus
US10535778B2 (en) 2014-11-25 2020-01-14 V Technology Co., Ltd. Thin film transistor, manufacturing process for thin film transistor, and laser annealing apparatus
US10622484B2 (en) 2014-11-25 2020-04-14 V Technology Co., Ltd. Thin film transistor, manufacturing process for thin film transistor, and laser annealing apparatus
GB2553162A (en) * 2016-08-22 2018-02-28 M Solv Ltd An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display
GB2553162B (en) * 2016-08-22 2020-09-16 M-Solv Ltd An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display

Also Published As

Publication number Publication date
JP2015516694A (ja) 2015-06-11
CN104379820A (zh) 2015-02-25
KR20150013731A (ko) 2015-02-05
TW201346993A (zh) 2013-11-16

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