CN104348085B - 发光元件、其制造方法和显示设备 - Google Patents

发光元件、其制造方法和显示设备 Download PDF

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Publication number
CN104348085B
CN104348085B CN201410379685.5A CN201410379685A CN104348085B CN 104348085 B CN104348085 B CN 104348085B CN 201410379685 A CN201410379685 A CN 201410379685A CN 104348085 B CN104348085 B CN 104348085B
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China
Prior art keywords
light
layer
compound semiconductor
semiconductor layer
region
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Expired - Fee Related
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CN201410379685.5A
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English (en)
Chinese (zh)
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CN104348085A (zh
Inventor
藤井贤太郎
大野智辉
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/042—Superluminescent diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment

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  • Led Devices (AREA)
CN201410379685.5A 2013-08-08 2014-08-04 发光元件、其制造方法和显示设备 Expired - Fee Related CN104348085B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013164884A JP6123561B2 (ja) 2013-08-08 2013-08-08 発光素子及びその製造方法、並びに、表示装置
JP2013-164884 2013-08-08

Publications (2)

Publication Number Publication Date
CN104348085A CN104348085A (zh) 2015-02-11
CN104348085B true CN104348085B (zh) 2019-04-16

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ID=52447841

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CN201410379685.5A Expired - Fee Related CN104348085B (zh) 2013-08-08 2014-08-04 发光元件、其制造方法和显示设备

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US (1) US9293637B2 (enExample)
JP (1) JP6123561B2 (enExample)
CN (1) CN104348085B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PT2959005T (pt) 2013-02-22 2021-12-30 Univ Leland Stanford Junior Utilização médica relacionada com extensão de telómero
US10490692B2 (en) 2015-03-03 2019-11-26 Sony Corporation Semiconductor light-emitting device and display apparatus
JP2017037948A (ja) * 2015-08-10 2017-02-16 セイコーエプソン株式会社 発光装置およびプロジェクター
JP6551672B2 (ja) * 2015-08-17 2019-07-31 セイコーエプソン株式会社 発光装置およびプロジェクター
EP3506438B1 (en) * 2016-08-25 2021-01-13 Sony Corporation Semiconductor laser, electronic apparatus, and drive method for semiconductor laser
US11593918B1 (en) * 2017-05-16 2023-02-28 Apple Inc. Gradient-based noise reduction
WO2023223676A1 (ja) * 2022-05-19 2023-11-23 パナソニックホールディングス株式会社 半導体レーザ素子

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6018539A (en) * 1997-01-10 2000-01-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser and method of fabricating semiconductor laser
US6167074A (en) * 1997-11-25 2000-12-26 Xerox Corporation Monolithic independently addressable Red/IR side by side laser
US6426967B1 (en) * 1998-06-29 2002-07-30 Rohm Co., Ltd. Semiconductor laser device
CN1767286A (zh) * 2004-10-29 2006-05-03 夏普株式会社 半导体激光元件的制造方法
CN101814698A (zh) * 2005-09-15 2010-08-25 索尼株式会社 激光二极管器件
CN102420387A (zh) * 2008-07-29 2012-04-18 索尼株式会社 驱动激光二极管的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2778985B2 (ja) 1989-05-26 1998-07-23 日本電信電話株式会社 スーパールミネツセントダイオード
JP3761240B2 (ja) * 1996-02-28 2006-03-29 浜松ホトニクス株式会社 光検出装置
US6034380A (en) * 1997-10-07 2000-03-07 Sarnoff Corporation Electroluminescent diode with mode expander
JP3683416B2 (ja) * 1998-08-21 2005-08-17 アンリツ株式会社 スーパールミネッセントダイオード
DE102006059612A1 (de) * 2006-12-12 2008-06-19 Forschungsverbund Berlin E.V. Halbleiterbauelement und Verfahren zu dessen Herstellung
JP4999583B2 (ja) 2007-07-18 2012-08-15 キヤノン株式会社 光走査装置及び走査型画像表示装置
JP2009088425A (ja) * 2007-10-03 2009-04-23 Sony Corp 半導体レーザおよびその製造方法
JP2012204671A (ja) * 2011-03-25 2012-10-22 Panasonic Corp 半導体発光素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6018539A (en) * 1997-01-10 2000-01-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser and method of fabricating semiconductor laser
US6167074A (en) * 1997-11-25 2000-12-26 Xerox Corporation Monolithic independently addressable Red/IR side by side laser
US6426967B1 (en) * 1998-06-29 2002-07-30 Rohm Co., Ltd. Semiconductor laser device
CN1767286A (zh) * 2004-10-29 2006-05-03 夏普株式会社 半导体激光元件的制造方法
CN101814698A (zh) * 2005-09-15 2010-08-25 索尼株式会社 激光二极管器件
CN102420387A (zh) * 2008-07-29 2012-04-18 索尼株式会社 驱动激光二极管的方法

Also Published As

Publication number Publication date
US20150041757A1 (en) 2015-02-12
US9293637B2 (en) 2016-03-22
CN104348085A (zh) 2015-02-11
JP6123561B2 (ja) 2017-05-10
JP2015035465A (ja) 2015-02-19

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