JP6123561B2 - 発光素子及びその製造方法、並びに、表示装置 - Google Patents

発光素子及びその製造方法、並びに、表示装置 Download PDF

Info

Publication number
JP6123561B2
JP6123561B2 JP2013164884A JP2013164884A JP6123561B2 JP 6123561 B2 JP6123561 B2 JP 6123561B2 JP 2013164884 A JP2013164884 A JP 2013164884A JP 2013164884 A JP2013164884 A JP 2013164884A JP 6123561 B2 JP6123561 B2 JP 6123561B2
Authority
JP
Japan
Prior art keywords
layer
compound semiconductor
semiconductor layer
light emitting
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013164884A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015035465A (ja
JP2015035465A5 (enExample
Inventor
賢太郎 藤井
賢太郎 藤井
大野　智輝
智輝 大野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2013164884A priority Critical patent/JP6123561B2/ja
Priority to US14/449,785 priority patent/US9293637B2/en
Priority to CN201410379685.5A priority patent/CN104348085B/zh
Publication of JP2015035465A publication Critical patent/JP2015035465A/ja
Publication of JP2015035465A5 publication Critical patent/JP2015035465A5/ja
Application granted granted Critical
Publication of JP6123561B2 publication Critical patent/JP6123561B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/042—Superluminescent diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment

Landscapes

  • Led Devices (AREA)
JP2013164884A 2013-08-08 2013-08-08 発光素子及びその製造方法、並びに、表示装置 Expired - Fee Related JP6123561B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013164884A JP6123561B2 (ja) 2013-08-08 2013-08-08 発光素子及びその製造方法、並びに、表示装置
US14/449,785 US9293637B2 (en) 2013-08-08 2014-08-01 Light emitting element and display device including a light-emitting region having ridge stripe structures
CN201410379685.5A CN104348085B (zh) 2013-08-08 2014-08-04 发光元件、其制造方法和显示设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013164884A JP6123561B2 (ja) 2013-08-08 2013-08-08 発光素子及びその製造方法、並びに、表示装置

Publications (3)

Publication Number Publication Date
JP2015035465A JP2015035465A (ja) 2015-02-19
JP2015035465A5 JP2015035465A5 (enExample) 2016-03-31
JP6123561B2 true JP6123561B2 (ja) 2017-05-10

Family

ID=52447841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013164884A Expired - Fee Related JP6123561B2 (ja) 2013-08-08 2013-08-08 発光素子及びその製造方法、並びに、表示装置

Country Status (3)

Country Link
US (1) US9293637B2 (enExample)
JP (1) JP6123561B2 (enExample)
CN (1) CN104348085B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PT2959005T (pt) 2013-02-22 2021-12-30 Univ Leland Stanford Junior Utilização médica relacionada com extensão de telómero
US10490692B2 (en) 2015-03-03 2019-11-26 Sony Corporation Semiconductor light-emitting device and display apparatus
JP2017037948A (ja) * 2015-08-10 2017-02-16 セイコーエプソン株式会社 発光装置およびプロジェクター
JP6551672B2 (ja) * 2015-08-17 2019-07-31 セイコーエプソン株式会社 発光装置およびプロジェクター
EP3506438B1 (en) * 2016-08-25 2021-01-13 Sony Corporation Semiconductor laser, electronic apparatus, and drive method for semiconductor laser
US11593918B1 (en) * 2017-05-16 2023-02-28 Apple Inc. Gradient-based noise reduction
WO2023223676A1 (ja) * 2022-05-19 2023-11-23 パナソニックホールディングス株式会社 半導体レーザ素子

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2778985B2 (ja) 1989-05-26 1998-07-23 日本電信電話株式会社 スーパールミネツセントダイオード
JP3761240B2 (ja) * 1996-02-28 2006-03-29 浜松ホトニクス株式会社 光検出装置
JPH11112081A (ja) * 1997-10-01 1999-04-23 Mitsubishi Electric Corp 半導体レーザ，及びその製造方法
US6034380A (en) * 1997-10-07 2000-03-07 Sarnoff Corporation Electroluminescent diode with mode expander
US6058124A (en) * 1997-11-25 2000-05-02 Xerox Corporation Monolithic independently addressable Red/IR side by side laser
JP2000022262A (ja) * 1998-06-29 2000-01-21 Rohm Co Ltd 半導体レーザ装置
JP3683416B2 (ja) * 1998-08-21 2005-08-17 アンリツ株式会社 スーパールミネッセントダイオード
JP4589080B2 (ja) * 2004-10-29 2010-12-01 シャープ株式会社 エッチング方法
JP4411540B2 (ja) * 2005-09-15 2010-02-10 ソニー株式会社 半導体レーザ装置
DE102006059612A1 (de) * 2006-12-12 2008-06-19 Forschungsverbund Berlin E.V. Halbleiterbauelement und Verfahren zu dessen Herstellung
JP4999583B2 (ja) 2007-07-18 2012-08-15 キヤノン株式会社 光走査装置及び走査型画像表示装置
JP2009088425A (ja) * 2007-10-03 2009-04-23 Sony Corp 半導体レーザおよびその製造方法
JP5307466B2 (ja) * 2008-07-29 2013-10-02 ソニー株式会社 半導体レーザ及びその駆動方法、並びに、半導体レーザ装置
JP2012204671A (ja) * 2011-03-25 2012-10-22 Panasonic Corp 半導体発光素子

Also Published As

Publication number Publication date
US20150041757A1 (en) 2015-02-12
US9293637B2 (en) 2016-03-22
CN104348085A (zh) 2015-02-11
JP2015035465A (ja) 2015-02-19
CN104348085B (zh) 2019-04-16

Similar Documents

Publication Publication Date Title
JP6123561B2 (ja) 発光素子及びその製造方法、並びに、表示装置
US10608411B2 (en) Light-emitting device, method for manufacturing same, and projector
CN110780523B (zh) 发光装置和投影仪
JP2022003700A (ja) 発光素子
CN106233473B (zh) 半导体光学设备和显示设备
JP2014165327A (ja) 半導体発光素子及びその製造方法、並びに、表示装置
WO2017018017A1 (ja) 発光素子
US20140239251A1 (en) Semiconductor light emitting element and display device
JPWO2019124163A1 (ja) 発光素子
US10691005B2 (en) Optical element and display apparatus
WO2017110017A1 (ja) 発光素子および表示装置
CN114976867A (zh) 发光装置及投影仪
CN114976874B (zh) 发光装置及投影仪
US11803115B2 (en) Light-emitting device and projector
US20230139048A1 (en) Light-emitting device and projector
JPWO2017217101A1 (ja) 光学素子及び表示装置
JP5304540B2 (ja) 発光装置およびプロジェクター
JP5305030B2 (ja) 発光素子、発光装置、およびプロジェクター
JP2021136325A (ja) 発光装置およびプロジェクター

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160210

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160210

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160930

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20161004

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161109

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170307

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170320

R151 Written notification of patent or utility model registration

Ref document number: 6123561

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees