CN104329855B - Semiconductor freezer and its manufacture method - Google Patents
Semiconductor freezer and its manufacture method Download PDFInfo
- Publication number
- CN104329855B CN104329855B CN201410441361.XA CN201410441361A CN104329855B CN 104329855 B CN104329855 B CN 104329855B CN 201410441361 A CN201410441361 A CN 201410441361A CN 104329855 B CN104329855 B CN 104329855B
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- shell
- side heat
- hot side
- condensation segment
- hot
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 121
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 103
- 238000009833 condensation Methods 0.000 claims abstract description 98
- 230000005494 condensation Effects 0.000 claims abstract description 98
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 69
- 239000010439 graphite Substances 0.000 claims abstract description 69
- 238000012546 transfer Methods 0.000 claims description 38
- 238000009413 insulation Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 11
- 238000003466 welding Methods 0.000 claims description 11
- 229920000297 Rayon Polymers 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 239000007767 bonding agent Substances 0.000 claims description 3
- 239000003973 paint Substances 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 238000005057 refrigeration Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
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- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
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- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
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- 239000008367 deionised water Substances 0.000 description 1
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- 239000012530 fluid Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
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Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D11/00—Self-contained movable devices, e.g. domestic refrigerators
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D19/00—Arrangement or mounting of refrigeration units with respect to devices or objects to be refrigerated, e.g. infrared detectors
- F25D19/003—Arrangement or mounting of refrigeration units with respect to devices or objects to be refrigerated, e.g. infrared detectors with respect to movable containers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D23/00—General constructional features
- F25D23/06—Walls
- F25D23/061—Walls with conduit means
Abstract
The present invention relates to a kind of semiconductor freezer and its manufacture method.The invention provides a kind of semiconductor freezer, at least one hot side heat of shell is reached including shell and semiconductor module and by the heat of semiconductor module, especially, the shell of semiconductor freezer includes graphite film layer, which is arranged at least part of inner surface of the substrate layer of shell, and the heat of at least part of condensation segment of every hot side heat is disseminated to the inner surface of the substrate layer of shell.Additionally, a kind of present invention also offers manufacture method of semiconductor freezer.Because having graphite film layer at least part of inner surface of the substrate layer of shell in the semiconductor freezer and its manufacture method of the present invention, even heat of at least part of condensation segment of every hot side heat can be disseminated to the inner surface of the substrate layer of shell for which, so as to make full use of shell as radiating surface, refrigerating efficiency, radiating efficiency and the effect of semiconductor freezer are significantly improved.
Description
Technical field
The present invention relates to refrigerator, more particularly to a kind of semiconductor freezer and its manufacture method.
Background technology
Conventional refrigerator uses freon as cold-producing medium, and using compressor as the power of refrigerator inside working medium circulation, deposits
To pollution problems such as depletions of the ozone layer, the environmental requirement of country is not met.Semiconductor refrigerating, be also called thermoelectric cooling,
Thermoelectric cooling.Compared with traditional steam compression type refrigeration mode, semiconductor refrigerating is without the need for compressor, cold-producing medium, cooling activation
Rapidly, the advantages of simple structure, noiselessness, therefore be considered as a kind of environmental-protection refrigeration side for contributing to solving the problems, such as ozone layer destroying
Formula.Meanwhile, semiconductor refrigerating also has refrigerator small volume, and the advantages of mobile, easy for installation, its refrigerating capacity can be in milliwatt extremely
Change between multikilowatt, the refrigeration temperature difference can be adjusted in the range of 20～150 DEG C, therefore is cooled down in electronic devices and components, small-sized refrigerating
There are many applications in the fields such as equipment, military, Medical Devices, scientific research, and what is more important semiconductor refrigerating opens refrigeration skill
One Ge Xin branches of art, solve a refrigeration difficult problem for many occasions.Particularly carrying recently as our people's living standard
Height, semiconductor refrigerating are promoted in the application of the domestic environments such as small refrigerator, water dispenser, dehumidifier rapidly.
At present, on market, most of semiconductor freezers adopt radiation aluminium groove or heat pipe to cover fin as radiating module, this
Radiating mode, although ensure that the requirement of the temperature and refrigeration indoor air temperature in semiconductor cooling hot junction, but there is also one
A little problems, such as realize that the aerofoil fan of forced convertion needs to consume extra electric energy, while the time run with aerofoil fan
Increase, its noise for producing and fault rate are also increasing, affect the comfortableness of user.Present inventor in order to solve on
State problem the condensation segment of the heat pipe that radiates is bearing directly against on inner surface of outer cover, using by the use of case surface as radiating surface, meanwhile,
Inventors herein have recognized that refrigerator refrigerating efficiency, radiating efficiency and the effect freezed using this kind of mode well below
Using the refrigerator of forced convertion cold scattering.
The content of the invention
One purpose of first aspect present invention aims to provide a kind of semiconductor freezer of novelty, can make full use of
Shell significantly improves its refrigerating efficiency and radiating efficiency as radiating surface.
One of first aspect present invention further objective is that will make hot side heat be firmly fixed at shell as far as possible.
Another of first aspect present invention further objective is that and will improve changing between hot side heat and shell as far as possible
The thermal efficiency.
One purpose of second aspect present invention is to provide for a kind of system for any of the above-described kind of semiconductor freezer
Make method.
According to the first aspect of the invention, the invention provides a kind of semiconductor freezer, including shell and semiconductor
Module and the heat of the semiconductor module is reached at least one hot side heat of the shell, especially, the shell
Including：Graphite film layer, which is arranged at least part of inner surface of the substrate layer of the shell, will be per hot side heat described in root
At least part of condensation segment heat be disseminated to the shell substrate layer inner surface.
Alternatively, include per the condensation segment of hot side heat described in root positioned at the first cold of the evaporator section both sides of the hot side heat
Solidifying section and the second condensation segment.
Alternatively, at least part of pipeline section of the first condensation segment and the second condensation segment per hot side heat described in root is respectively along water
Flat longitudinal direction is posted by the inner surface of two opposing sidewalls of the shell.
Alternatively, the quantity of an at least hot side heat is at least two, every in a part of hot side heat
At least part of pipeline section of first condensation segment and the second condensation segment of root hot side heat is posted by described respectively along horizontal longitudinal direction
The inner surface of two opposing sidewalls of shell, the first condensation segment of every hot side heat in hot side heat described in remainder and
At least part of pipeline section of the second condensation segment is posted by the inner surface of the roof of the shell along horizontal longitudinal direction；Or
The quantity of an at least hot side heat is at least three, every hot junction heat in a part of hot side heat
At least part of pipeline section of first condensation segment and the second condensation segment of pipe is posted by the two of the shell respectively along horizontal longitudinal direction
The inner surface of individual opposing sidewalls, the first condensation segment of every hot side heat in hot side heat described in another part and the second condensation
At least part of pipeline section of section is posted by the inner surface of the roof of the shell, hot junction described in remainder along horizontal longitudinal direction
At least part of pipeline section of first condensation segment and the second condensation segment of every hot side heat in heat pipe is pasted along horizontal longitudinal direction
It is against the inner surface of the diapire of the shell.
Alternatively, at least part of condensation segment per hot side heat described in root is welded in the interior table of the substrate layer of the shell
Face；The removing that the substrate layer of the shell wall of at least part of condensation segment of the hot side heat is welded with the shell is used for welding per root
The graphite film layer is provided with remaining inner surface after the inner surface of at least part of condensation segment of the hot side heat.
Alternatively, the semiconductor freezer is further included：At least one hot junction fixation clip, each described hot junction
At least part of condensation segment per hot side heat described in root is fixed on fixation clip the inner surface of the shell；It is solid on the shell
Surely have the shell wall of at least part of condensation segment of the hot side heat substrate layer inner surface on be provided with the graphite film layer.
Alternatively, the semiconductor module includes：Semiconductor chilling plate；With hot junction heat transfer substrate, which is installed into makes which
Front surface is contacted against with the hot junction of the semiconductor chilling plate, is formed with least one receiving on the hot junction heat transfer substrate
Groove, each described holding tank are configured at least part of evaporator section for accommodating a corresponding hot side heat.
Alternatively, the graphite film layer is provided with the inner surface of the substrate layer of the rear wall of the shell, the hot junction passes
The rear surface of hot substrate is contacted against with the inner surface of the graphite film layer of the rear wall of the shell.
Alternatively, the semiconductor module is further included：Cool guiding block, surface is cold with the semiconductor chilling plate thereafter
End in contact against；With the cold and hot end thermal insulation layer with central opening, the semiconductor chilling plate and the cool guiding block are arranged on institute
State in central opening, the hot junction of the semiconductor chilling plate protrudes from or flushes in the trailing flank of the cold and hot end thermal insulation layer, institute
The front surface for stating cool guiding block is protruded from or flushes in the leading flank of the cold and hot end thermal insulation layer.
Alternatively, front surface of the opening of each holding tank in the hot junction heat transfer substrate, so that per described in root
The outer wall of at least part of evaporator section of hot side heat is contacted against with the hot junction of the semiconductor chilling plate.
Alternatively, at least part of condensation segment per hot side heat described in root is flat tube.
According to the second aspect of the invention, the invention provides a kind of manufacturer of any of the above-described kind of semiconductor freezer
Method, including：Graphite spraying coating or stickup graphite film at least part of inner surface of the substrate layer of the shell, to be formed
State the graphite film layer of shell.
Alternatively, at least part of inner surface of the substrate layer of the shell, graphite spraying coating includes：By spray gun
The graphite paint of the emulsus with bonding agent is equably sprayed on device at least part of interior of the substrate layer of the shell
On surface.
Alternatively, pasting graphite film at least part of inner surface of the substrate layer of the shell includes：In the graphite
One surface of film applies last layer viscose glue；The graphite film is wrapped at least part of inner surface of the substrate layer of the shell
On, so that the surface for scribbling viscose glue of the graphite film is contacted against with least part of inner surface of the substrate layer of the shell.
Alternatively, in the base for welding the shell wall of at least part of condensation segment of the corresponding hot side heat of the shell
On the inner surface of flaggy graphite spraying coating or paste graphite film when, on the inner surface of the substrate layer of the shell wall in advance remain for weldering
Connect the block of at least part of condensation segment of the corresponding hot side heat.
Because at least part of inner surface of the substrate layer of shell in the semiconductor freezer and its manufacture method of the present invention
Upper to have graphite film layer, even heat of at least part of condensation segment of every hot side heat can be disseminated to the base of shell for which
The inner surface of flaggy, so as to make full use of shell as radiating surface, significantly improves the refrigerating efficiency of semiconductor freezer, dissipates
The thermal efficiency and effect.
Further, due to the special knot of hot side heat in the semiconductor freezer and its manufacture method of the present invention
Structure, substantially increases the efficiency of radiating efficiency and refrigerator.
Further, due to the present invention semiconductor freezer and its manufacture method in, the special peace of hot side heat
Dress mode, not only makes hot side heat be firmly fixed at shell, and significantly improves the effect of the heat exchange between hot side heat and shell
Rate.
Further, due to the present invention semiconductor freezer and its manufacture method in hot junction heat transfer substrate connect with shell
Touch against significantly increasing cooling area.
Further, as the middle inside the shell of semiconductor freezer of the invention and preparation method thereof does not have radiator fan,
The probability that moving component breaks down situations such as abrasion, collision can be avoided, semiconductor freezer operation is improve
Reliability and life-span.
Further, semiconductor freezer of the invention can make full use of case surface as radiating surface, then be not required to
Radiator fan is wanted, so that the semiconductor freezer noise is low, energy-conserving and environment-protective, reliability are high, and simple structure, installation side
Just, strong adaptability.
According to the detailed description below in conjunction with accompanying drawing to the specific embodiment of the invention, those skilled in the art will be brighter
The above-mentioned and other purposes of the present invention, advantages and features.
Description of the drawings
Describe some specific embodiments of the present invention hereinafter with reference to the accompanying drawings by way of example, and not by way of limitation in detail.
In accompanying drawing, identical reference denotes same or similar part or part.It should be appreciated by those skilled in the art that these
What accompanying drawing was not necessarily drawn to scale.In accompanying drawing：
Fig. 1 is the schematic explosive view of semiconductor freezer according to an embodiment of the invention；
Fig. 2 is the schematic local structural graph of semiconductor freezer according to an embodiment of the invention；
Fig. 3 is the schematic local structural graph of semiconductor freezer according to an embodiment of the invention；
Fig. 4 is the schematic diagram of hot junction fixation clip in semiconductor freezer according to an embodiment of the invention
Fig. 5 is the schematic cross sectional views of semiconductor freezer according to an embodiment of the invention；
Fig. 6 is the schematic partial enlarged view in Fig. 5 at A；
Fig. 7 is the schematic local structural graph of the inner bag of the semiconductor freezer with one embodiment of the invention；
Fig. 8 is the schematic local structural graph of the inner bag of the semiconductor freezer with one embodiment of the invention.
Specific embodiment
Fig. 1 is the schematic explosive view of semiconductor freezer according to an embodiment of the invention.The embodiment of the present invention
There is provided a kind of semiconductor freezer, which includes shell 50 and semiconductor module 20 and passes the heat of semiconductor module 20
To at least one hot side heat 60 of shell 50.Especially, the shell 50 of the semiconductor freezer in the embodiment of the present invention is wrapped
Graphite film layer 51 is included, which is arranged at least part of inner surface of the substrate layer of shell 50, by every hot side heat 60 extremely
The heat of small part condensation segment is disseminated to the inner surface of the substrate layer of shell 50.Specifically, reclining on shell 50 has hot side heat
Graphite film layer 51 is provided with least part of inner surface of the substrate layer of the shell wall of 60 at least part of condensation segments, with quick, uniform
Ground distributes cold to inner surface of outer cover.For example, can set on the inner surface of the substrate layer of the two of shell 50 relatively vertical shell walls
Put graphite film layer.In the other embodiment of the present invention, the outermost layer of the substrate layer of all shell walls of shell 50 can be
Graphite film layer 51.The semiconductor freezer of the embodiment of the present invention makes full use of the horizontal high thermal conductivity of graphite film layer 51 (also may be used
Referred to as uniform temperature), the even heat that hot side heat 60 spreads out of is dissipated into into the substrate layer surface of the shell wall with graphite film layer, with
The substrate layer of the shell wall with graphite film layer is made equably to distribute heat into extraneous air.
Those skilled in the art is generally, it is considered that metal substrate layer can be transferred heat to outward just with thermal conduction characteristic
In air outside shell, and samming is not needed, but it was found by the inventors of the present invention that directly by the condensation segment of every hot side heat
When heat reaches inner surface of outer cover, the temperature in the region of the condensation segment of the close hot side heat on shell will be significantly larger than away from heat
The region of the condensation segment of end heat pipe, makes the heat that various pieces on the surface of shell are distributed inconsistent, reduces semiconductor refrigerating
The radiating of refrigerator.The graphite film layer that graphite spraying coating or stickup graphite film are formed at least part of inner surface of substrate layer
Each place radiating of shell can be made than more uniform.
In view of the particularity of the structure of outcase of refrigerator, every hot side heat is designed as into " similar U in the embodiment of the present invention
The structure of type ".Specifically, the condensation segment of every hot side heat 60 is included positioned at the first cold of the evaporator section both sides of the hot side heat
Solidifying section and the second condensation segment, at least part of pipeline section of first condensation segment and the second condensation segment of every hot side heat 60 are respectively perpendicular
In at least part of evaporator section of corresponding hot side heat 60.In embodiments of the present invention, the evaporator section of every hot side heat 60 is phase
The middle pipeline section part of hot side heat is answered, is mainly used in absorbing the heat that semiconductor module 20 is produced, for example, every hot side heat
60 evaporator section can at least including the portion in the hot junction heat transfer substrate 25 being embedded in semiconductor module 20 of corresponding hot side heat
It is in charge of section.
Fig. 2 is the schematic local structural graph of semiconductor freezer according to an embodiment of the invention.At least one
The quantity of hot side heat 60 can be at least three, the first condensation segment of the every hot side heat 60 in a part of hot side heat and
At least part of pipeline section of two condensation segments is posted by the inner surface of two opposing sidewalls of shell respectively along horizontal longitudinal direction, another
At least part of pipeline section of first condensation segment and the second condensation segment of the every hot side heat 60 in the hot side heat of part is along level
Longitudinal direction is posted by the inner surface of the roof of shell 50, and first of the every hot side heat 60 in remainder hot side heat is cold
At least part of pipeline section of solidifying section and the second condensation segment is posted by the inner surface of the diapire of shell 50 along horizontal longitudinal direction.
In this embodiment, at least part of condensation segment of every hot side heat 60 is welded in the inner surface of shell 50, i.e., often
At least part of pipeline section of first condensation segment and the second condensation segment of root hot side heat 60 is welded in outer respectively along horizontal longitudinal direction
The inner surface of the substrate layer of the corresponding shell wall of shell.In order to further improve heat exchange efficiency, every hot side heat 60 it is at least part of
Condensation segment is flat tube, that is, the cross section for abutting in the part hot side heat pipeline section on shell 50 is that squarish or square are circular.Often
At least part of condensation segment of root hot side heat 60 can be by soldering in the inner surface of shell 50, to reduce thermal contact resistance.
The removing that the substrate layer of the shell wall of 60 at least part of condensation segment of hot side heat is welded with shell 50 is used to weld every
Graphite film layer 51 is provided with remaining inner surface after the inner surface of at least part of condensation segment of root hot side heat.That is,
In this embodiment, remove for welding on the inner surface of the substrate layer of two of shell 50 relative shell walls and roof and diapire
Remainder behind the part of heat pipe is graphite film layer 51, and the heat of the condensation segment of hot side heat 60 can be quickly and uniformly
The inner surface of the substrate layer of two relative shell walls and roof and diapire of shell is passed to, and then is delivered to the appearance of shell
Face.
Fig. 3 is the schematic local structural graph of semiconductor freezer according to an embodiment of the invention.It is of the invention real
Applying the semiconductor freezer in example also includes at least one hot junction fixation clip 70.Each hot junction fixation clip 70 will be warm per root
At least part of condensation segment of end heat pipe 60 is fixed on the inner surface of shell 50, so that at least part of condensation of every hot side heat 60
Section is posted by the inner surface of shell 50.Corresponding hot side heat 60 can be fixed on shell by each hot junction fixation clip 70 securely
On 50, at least part of condensation segment of every hot side heat 60 with shell 50 directly against leaning on, to reduce thermal contact resistance.
In some embodiments of the invention, as shown in figure 4, each hot junction fixation clip 70 may also be employed special knot
Structure, which can have protrusion 71 and two fixed flanks 72.The fixing groove for extending along its length is formed with protrusion 71,
To accommodate at least part of condensation segment of corresponding hot side heat 60.Two fixed flanks 72 are respectively from two length sides of protrusion 71
Edge extends laterally, for the inner surface of shell 50 is fixedly connected and abutted in shell 50, by corresponding hot side heat
60 at least part of condensation segment passes to the inner surface that the heat of hot junction fixation clip 70 reaches shell 50.Each fixes flank 72
It is upper that there is spaced multiple screw holes along its length, so that each of each hot junction fixation clip 70 fixes flank 72
Shell is fixed on by screw.
The quantity of an at least hot side heat 60 of the present invention can (refrigerating capacity etc.) appropriate design according to the actual needs, often
The position of first condensation segment and the second condensation segment of root hot side heat 60 is reset also dependent on being actually needed.For example in radiating
When amount is within 100W, by arranging, the heat of semiconductor module is conducted to the both sides of shell 50 by 4 " U-shaped like " heat pipes
Face, roof and diapire.When heat dissipation capacity is 100～125W, by 5 " U-shaped like " heat pipes of arranging by the heat of semiconductor module
Amount is conducted to the two sides of shell 50, roof and diapire.When heat dissipation capacity is 125～150W, by 6 " U-shaped like " of arranging
The heat of semiconductor module is conducted to the two sides of shell 50, roof and diapire by heat pipe.In general, hot junction heat often increases
25W, then need to increase a hot side heat 60.
In some alternate embodiments of the present invention, first condensation segment and the second condensation segment of every hot side heat 60
At least partly pipeline section is posted by the inner surface and the inner surface of roof of a respective side walls of shell respectively along horizontal longitudinal direction.
For example, at least the quantity of a hot side heat 60 can be 2, at least part of pipeline section of the first condensation segment of a hot side heat 60
The inner surface of a respective side walls of shell 50 is posted by along horizontal longitudinal direction, at least part of pipeline section of the second condensation segment is along water
Flat longitudinal direction is posted by the inner surface of the roof of shell 50；First condensation segment of an other hot side heat 60 it is at least part of
Pipeline section is posted by the inner surface of a respective side walls of shell 50, at least part of pipeline section of the second condensation segment along horizontal longitudinal direction
The inner surface of the roof of shell 50 is posted by along horizontal longitudinal direction.
In other alternate embodiments of the present invention, at least the quantity of a hot side heat 60 is alternatively at least two
Root, at least part of pipeline section difference of first condensation segment and the second condensation segment of the every hot side heat 60 in a part of hot side heat
The inner surface of two opposing sidewalls of shell 50 is posted by along horizontal longitudinal direction, every hot junction in remainder hot side heat
At least part of pipeline section of first condensation segment and the second condensation segment of heat pipe 60 is posted by the top of shell 50 along horizontal longitudinal direction
The inner surface of wall.In the other alternate embodiment of the present invention, the first condensation segment of every hot side heat 60 and second cold
At least part of pipeline section of solidifying section is posted by the inner surface of two opposing sidewalls of shell respectively along horizontal longitudinal direction.
Fig. 5 is the schematic cross sectional views of semiconductor freezer according to an embodiment of the invention.As shown in figure 5, and
With reference to Fig. 6, semiconductor module 20 may include semiconductor chilling plate 21, cold end heat transfer substrate 22, hot junction heat transfer substrate 25 and conduction cooling
Block 23 and the cold and hot end thermal insulation layer 24 with central opening.The quantity of semiconductor chilling plate 21 can be one or more.At this
In inventive embodiments, the quantity of semiconductor chilling plate 21 is one piece.The rear surface of cool guiding block 23 is cold with semiconductor chilling plate 21
End in contact is against the front surface of cool guiding block 23 is contacted against with the rear surface of cold end heat transfer substrate 22, by semiconductor chilling plate
21 cold reaches cold end heat transfer substrate 22.Semiconductor chilling plate 21 and cool guiding block 23 are arranged on the central authorities of cold and hot end thermal insulation layer 24
In opening, the hot junction of semiconductor chilling plate 21 protrudes from or flushes in the trailing flank of cold and hot end thermal insulation layer 24, before cool guiding block 23
Surface protrudes from or flushes in the leading flank of cold and hot end thermal insulation layer 24, to prevent cold end heat transfer substrate 22 and hot junction heat transfer substrate 25
Between carry out cold and hot exchange.Hot junction heat transfer substrate 25 be installed into make its front surface contact with the hot junction of semiconductor chilling plate 21 to
Lean on, by the heat transfer of semiconductor chilling plate 21 to shell 50, radiated.It is formed with least on hot junction heat transfer substrate 25
One holding tank, each holding tank are configured at least part of evaporator section for accommodating a corresponding hot side heat 60.Semiconductor refrigerating
Piece 21, cold end heat transfer substrate 22, hot junction heat transfer substrate 25 and cool guiding block 23 contact surface each other will all smear heat-conducting silicone grease,
To reduce contact surface thermal resistance.
In a preferred embodiment of the invention, graphite is provided with the inner surface of the substrate layer of the rear wall of shell 50
Film layer 51, the rear surface of hot junction heat transfer substrate 25 are contacted against with the inner surface of the graphite film layer 51 of the rear wall of shell 50, so that
Hot junction heat transfer substrate 25 is contacted with graphite film layer 51, significantly increases area of dissipation.Each holding tank of hot junction heat transfer substrate 25
Opening in hot junction heat transfer substrate 25 front surface so that the outer wall of at least part of evaporator section of every hot side heat 60
Contact against with the hot junction of semiconductor chilling plate so that the inner surface of the evaporator section of every hot side heat 60 and 50 rear wall of shell it
Between have certain spacing, can prevent every hot side heat 60 evaporator section absorb 50 inner surface of shell on heat, reduce dissipate
Thermal effect.
Fig. 7 is the schematic local structural graph of the inner bag of the semiconductor freezer with one embodiment of the invention.This
The semiconductor freezer of inventive embodiments may also include and the cold of semiconductor module 20 be reached in semiconductor freezer
At least one cool side heat pipes 30 of courage 10 and at least one cold end fixation clip 40.Especially, partly leading in the embodiment of the present invention
The inner bag 10 of system cold refrigerator includes graphite film layer 12, and which is arranged at least part of outer surface of the substrate layer 11 of inner bag 10,
So that the cold of at least part of evaporator section of every cool side heat pipes 30 to be disseminated to the outer surface of the substrate layer 11 of inner bag 10.Specifically
Ground, sets at least part of outer surface of the substrate layer 11 of the courage wall of 30 at least part of evaporator section of the cool side heat pipes that recline on inner bag 10
Graphite film layer 12 is equipped with, rapidly and uniformly heat is distributed to outer surface of liner.For example, can be erected the two of inner bag 10 relatively
Graphite film layer is set on the outer surface of the substrate layer of courage wall.In the other embodiment of the present invention, inner bag 10 it is all
The outermost layer of the substrate layer 11 of courage wall can be graphite film layer 12.The semiconductor freezer of the embodiment of the present invention makes full use of stone
The horizontal high thermal conductivity (alternatively referred to as uniform temperature) of ink film layer 12, the cold that cool side heat pipes 30 are spread out of uniformly is dissipated into stone
11 surface of substrate layer of the courage wall of ink film layer, so that the substrate layer 11 of the courage wall with graphite film layer equably distributes cold to interior
Storing compartment in courage 10.
At least part of evaporator section of every cool side heat pipes 30 can be fixed on the outer of inner bag 10 by each cold end fixation clip 40
Surface, so that at least part of evaporator section of every cool side heat pipes 30 is posted by the outer surface of inner bag 10.Each cold end fixation clip
40 is consistent with the structure of the hot junction fixation clip 70 for fixing hot side heat 60.In some alternate embodiments of the present invention
In, as shown in figure 8, at least part of evaporator section of every cool side heat pipes 30 is welded in the outer surface of inner bag 10, and adopt for tin
The welding manner of weldering, i.e. cool side heat pipes 30 can carry out soldering with the substrate layer 11 of the inner bag 10 processed through plating nickel on surface and be connected,
To reduce thermal contact resistance.
At least part of pipeline section of first evaporator section and the second evaporator section of every cool side heat pipes 30 is respectively along level longitudinal direction side
To the outer surface of two opposing sidewalls for being posted by inner bag 10.Or, the quantity of an at least cool side heat pipes 30 is at least three, with
Two parts or three parts can be divided into.Every cool side heat pipes 30 when two parts are separated into, in a part of cool side heat pipes
The first evaporator section and at least part of pipeline section of the second evaporator section be posted by two phases of inner bag 10 respectively along horizontal longitudinal direction
The outer surface of offside wall, first evaporator section and the second evaporator section of the every cool side heat pipes 30 in remainder cool side heat pipes are extremely
Small part pipeline section is posted by the outer surface of the roof of inner bag 10 along horizontal longitudinal direction.When three parts is separated into, one
At least part of pipeline section of first evaporator section and the second evaporator section of the every cool side heat pipes 30 divided in cool side heat pipes is respectively along level
Longitudinal direction is posted by the outer surface of two opposing sidewalls of inner bag 10, the every cool side heat pipes 30 in another part cool side heat pipes
The first evaporator section and the second evaporator section at least part of pipeline section be posted by along horizontal longitudinal direction inner bag 10 roof it is outer
Surface, at least part of pipeline section of first evaporator section and the second evaporator section of the every cool side heat pipes 30 in remainder cool side heat pipes
The outer surface of the diapire of inner bag 10 is posted by along horizontal longitudinal direction.
At least one holding tank is also formed with cold end heat transfer substrate 22, it is corresponding cold that each holding tank is configured to receiving one
At least part of condensation segment of end heat pipe 30.Rear surface of the opening of each holding tank in cold end heat transfer substrate 22, so that per root
The outer wall of at least part of condensation segment of cool side heat pipes 30 is contacted against with the front surface of cool guiding block 23.Cold end heat transfer substrate 22
Front surface contact against with the outer surface of the rear wall of inner bag 10.At least part of evaporator section of every cool side heat pipes 30 is flat tube.
In one embodiment of the invention, the substrate layer of inner bag 10, cold end heat transfer substrate 22 and hot junction heat transfer substrate 25
And the substrate layer of shell 50 is integrally formed all using aluminium alloy 6061 and using aluminium section bar cold extruding formation process, and which is entered
The process of row plating nickel on surface, carries out argon arc welding to its gap, is drilled in relevant position using drilling machine.Additionally, 50 outer surface of shell can
Cover ABS hard materials.The copper product that the material of cool guiding block 23 can adopt heat transfer efficiency higher.The substrate layer of inner bag 10, cold end
The substrate layer of heat transfer substrate 22, cool guiding block 23 and hot junction heat transfer substrate 25 and shell 50 may also be employed other metal materials.
Cool side heat pipes 30 and hot side heat 60 mainly use copper product, the working medium in cool side heat pipes 30 can be ethanol or
Methyl alcohol, the working medium in hot side heat 60 can be deionized water.In order to ensure the temperature and temperature at the cold and hot end of semiconductor chilling plate 21
Difference, single cool side heat pipes 30 and hot side heat 60 its temperature difference under the conditions of the power test of 25W are necessarily less than 5 DEG C.Cool side heat pipes
30 and hot side heat 60 through sintering, fluid injection, vacuumize, be initially formed round directly-heated pipe after technique after degasification and sealing, then utilize
Circle directly-heated pipe is struck out required form by punch press and pressing mold, and such as flat tube shape also needs to carry out finishing processing to its surface after flattening,
To ensure flatness.It is larger in use environment humidity, also need to carry out chemical nickel plating to cool side heat pipes 30 and 60 surface of hot side heat,
And Salt frog test is carried out, to avoid cool side heat pipes from being corroded.
The cold and hot end thermal insulation layer 24 of semiconductor module 20 adopts polyurethane foam material, foaming-formed by mould,
Then its relevant position is drilled, and 23 interference fit of semiconductor chilling plate 21 and cool guiding block is positioned in central opening.
The embodiment of the present invention additionally provides a kind of manufacture method of any of the above-described kind of semiconductor freezer of manufacture, its bag
Include：Graphite spraying coating or stickup graphite film at least part of inner surface of the substrate layer of shell, to form the graphite of shell
Film layer.Specifically, at least part of inner surface of the substrate layer of shell, graphite spraying coating includes：To have by spray gun device
The graphite paint for having the emulsus of bonding agent is equably sprayed at least part of inner surface of the substrate layer of shell.In the base of shell
Graphite film is pasted at least part of inner surface of flaggy to be included：Last layer viscose glue is applied on a surface of graphite film；By graphite film
On at least part of inner surface of the substrate layer for being wrapped in shell, so that the substrate layer of the surface for scribbling viscose glue of graphite film and shell
At least part of inner surface contact against.It should be noted that according to welding mode by least part of cold of hot side heat
When solidifying section is fixed on shell, in shell for welding the substrate layer of the shell wall of at least part of condensation segment of corresponding hot side heat
Graphite spraying coating or when pasting graphite film on inner surface, remains for welding corresponding on the inner surface of the substrate layer of the shell wall in advance
The block of at least part of condensation segment of hot side heat, for welding at least part of condensation segment of hot side heat.
In step：Graphite spraying coating or stickup graphite film at least part of inner surface of the substrate layer of shell, with shape
Into the graphite film layer of shell, also include afterwards：
At least part of condensation segment of every cool side heat pipes is embedded in by pressure-riveting process for the semiconductor of semiconductor freezer
In the corresponding holding tank of the cold end heat transfer substrate of module；By at least part of evaporation of every cool side heat pipes of semiconductor freezer
Section is fixed on the inner bag of semiconductor freezer, to form the first pre- arrangement.
At least part of evaporator section of every hot side heat is embedded in by pressure-riveting process for the semiconductor of semiconductor freezer
In the corresponding holding tank of the hot junction heat transfer substrate of module；By at least part of condensation of every hot side heat of semiconductor freezer
Section be fixed on semiconductor freezer shell removing rear wall inner surface after remaining inner surface on, to form the second prepackage
Component.
The 3rd prepackage group formed after the semiconductor chilling plate of semiconductor module, cool guiding block are installed on cold and hot end thermal insulation layer
The front surface of part is resisted against the rear surface of cold end heat transfer substrate.
The front surface of the hot junction heat transfer substrate of semiconductor module is resisted against into the hot junction of semiconductor chilling plate, that is, by
Two pre- arrangements are arranged on the first pre- arrangement.
Multiple screws are sequentially passed through accordingly leading on the respective through hole on the heat transfer substrate of hot junction, cold and hot end thermal insulation layer respectively
Screw in after respective through hole on hole and cold end heat transfer substrate in the screw hole on inner bag rear wall.
Together with the rear wall of the shell of semiconductor freezer is fixed by screws in the remainder of shell, in shell and interior
Filled polyurethane foaming layer between courage, is revealed with completely cutting off cold indoor between storing.
The Qianmen of semiconductor freezer and shell contact position install magnetic sealing strip, by Qianmen by hinge with it is outer
Shell is hinged.
It should be noted that above-mentioned steps have been able to be operated semiconductor freezer, but in order to it is attractive in appearance or its
It requires, in addition it is also necessary to install part of some ornamental members, protectiveness etc..
So far, although those skilled in the art will appreciate that detailed herein illustrate and describe multiple showing for the present invention
Example property embodiment, but, without departing from the spirit and scope of the present invention, still can be direct according to present disclosure
It is determined that or deriving many other variations or modifications for meeting the principle of the invention.Therefore, the scope of the present invention is understood that and recognizes
It is set to and covers all these other variations or modifications.
Claims (13)
1. a kind of semiconductor freezer, including shell and semiconductor module and the heat of the semiconductor module is reached into institute
State at least one hot side heat of the inner surface of shell, it is characterised in that the shell includes：
Graphite film layer, which is arranged at least part of inner surface of the substrate layer of the shell, will be per hot side heat described in root
At least part of condensation segment heat be disseminated to the shell substrate layer inner surface；And
The semiconductor module includes：
Semiconductor chilling plate；With
Hot junction heat transfer substrate, which is installed into contacts against its front surface and the hot junction of the semiconductor chilling plate, the heat
At least one holding tank is formed with the heat transfer substrate of end, each described holding tank is configured to accommodate a corresponding hot side heat
At least part of evaporator section；
Front surface of the opening of each holding tank in the hot junction heat transfer substrate, so that per hot side heat described in root extremely
The outer wall of small part evaporator section is contacted against with the hot junction of the semiconductor chilling plate.
2. semiconductor freezer according to claim 1, it is characterised in that
Include the first condensation segment and second positioned at the evaporator section both sides of the hot side heat per the condensation segment of hot side heat described in root
Condensation segment.
3. semiconductor freezer according to claim 2, it is characterised in that
At least part of pipeline section of the first condensation segment and the second condensation segment per hot side heat described in root is respectively along horizontal longitudinal direction
It is posted by the inner surface of two opposing sidewalls of the shell.
4. semiconductor freezer according to claim 2, it is characterised in that
The quantity of an at least hot side heat is at least two, every hot side heat in a part of hot side heat
At least part of pipeline section of the first condensation segment and the second condensation segment is posted by two phases of the shell respectively along horizontal longitudinal direction
The inner surface of offside wall, first condensation segment and the second condensation segment of every hot side heat in hot side heat described in remainder
At least partly pipeline section is posted by the inner surface of the roof of the shell along horizontal longitudinal direction；Or
The quantity of an at least hot side heat is at least three, every hot side heat in a part of hot side heat
At least part of pipeline section of the first condensation segment and the second condensation segment is posted by two phases of the shell respectively along horizontal longitudinal direction
The inner surface of offside wall, first condensation segment and the second condensation segment of every hot side heat in hot side heat described in another part
At least partly pipeline section is posted by the inner surface of the roof of the shell, hot side heat described in remainder along horizontal longitudinal direction
In the first condensation segment of every hot side heat and at least part of pipeline section of the second condensation segment be posted by along horizontal longitudinal direction
The inner surface of the diapire of the shell.
5. semiconductor freezer according to claim 1, it is characterised in that
At least part of condensation segment per hot side heat described in root is welded in the inner surface of the substrate layer of the shell；
The removing that the substrate layer of the shell wall of at least part of condensation segment of the hot side heat is welded with the shell is used to weld every
The graphite film layer is provided with remaining inner surface after the inner surface of at least part of condensation segment of hot side heat described in root.
6. semiconductor freezer according to claim 1, it is characterised in that further include：
At least one hot junction fixation clip, each described hot junction fixation clip is by least part of condensation per hot side heat described in root
Section is fixed on the inner surface of the shell；
It is provided with the inner surface of the substrate layer that the shell wall of at least part of condensation segment of the hot side heat is fixed with the shell
The graphite film layer.
7. semiconductor freezer according to claim 1, it is characterised in that
The graphite film layer, the rear table of the hot junction heat transfer substrate are provided with the inner surface of the substrate layer of the rear wall of the shell
Face is contacted against with the inner surface of the graphite film layer of the rear wall of the shell.
8. semiconductor freezer according to claim 1, it is characterised in that the semiconductor module is further included：
Cool guiding block, thereafter surface contact against with the cold end of the semiconductor chilling plate；With
Cold and hot end thermal insulation layer with central opening, the semiconductor chilling plate and the cool guiding block are arranged on the central opening
In, the hot junction of the semiconductor chilling plate protrudes from or flushes in the trailing flank of the cold and hot end thermal insulation layer, the cool guiding block
Front surface is protruded from or flushes in the leading flank of the cold and hot end thermal insulation layer.
9. semiconductor freezer according to claim 1, it is characterised in that
At least part of condensation segment per hot side heat described in root is flat tube.
10. the manufacture method of semiconductor freezer any one of a kind of claim 1 to 9, it is characterised in that include：
Graphite spraying coating or stickup graphite film at least part of inner surface of the substrate layer of the shell, it is described outer to be formed
The graphite film layer of shell.
11. manufacture methods according to claim 10, it is characterised in that
On at least part of inner surface of the substrate layer of the shell, graphite spraying coating includes：
The graphite paint of the emulsus with bonding agent is equably sprayed on by spray gun device for the substrate layer of the shell
At least part of inner surface on.
12. manufacture methods according to claim 10, it is characterised in that
Graphite film is pasted at least part of inner surface of the substrate layer of the shell to be included：
Last layer viscose glue is applied on a surface of the graphite film；
On at least part of inner surface of the substrate layer that the graphite film is wrapped in the shell, so that the graphite film is scribbled
The surface of viscose glue is contacted against with least part of inner surface of the substrate layer of the shell.
13. manufacture methods according to claim 10, it is characterised in that
In the interior table for welding the substrate layer of the shell wall of at least part of condensation segment of the corresponding hot side heat of the shell
Graphite spraying coating or when pasting graphite film on face, remains for welding corresponding described on the inner surface of the substrate layer of the shell wall in advance
The block of at least part of condensation segment of hot side heat.
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| CN201410441361.XA CN104329855B (en) | 2014-08-29 | 2014-08-29 | Semiconductor freezer and its manufacture method |
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|---|---|---|---|
| CN201410441361.XA CN104329855B (en) | 2014-08-29 | 2014-08-29 | Semiconductor freezer and its manufacture method |
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| CN104329855B true CN104329855B (en) | 2017-04-05 |
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| CN1945169A (en) * | 2005-10-08 | 2007-04-11 | 深圳市益酷科技有限公司 | Semiconductor circulation heat pipe refrigerator |
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| CN103066037A (en) * | 2012-12-02 | 2013-04-24 | 合肥工业大学 | Thermoelectricity refrigeration heat pipe radiator for electric car insulated gate bipolar translator (IGBT) |
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| GB1156204A (en) * | 1965-07-06 | 1969-06-25 | G V Planar Ltd | Improvements in and relating to Semiconductor Devices |
| CN2745005Y (en) * | 2004-12-11 | 2005-12-07 | 佛山市顺德区凯琴电器有限公司 | Totally mute semiconductor refrigerator |
| KR20110059477A (en) * | 2009-11-27 | 2011-06-02 | 주성대학산학협력단 | The medical cold/heat machine |
| US9003820B2 (en) * | 2010-04-20 | 2015-04-14 | Prince Castle LLC | Point-of-use holding cabinet |
| CN202941078U (en) * | 2012-11-14 | 2013-05-15 | 苏州苏旺电子科技有限公司 | Graphite aluminum foil composite diaphragm material |
| CN103465539A (en) * | 2013-08-23 | 2013-12-25 | 苏州艾特斯环保材料有限公司 | Heat dissipation plate with graphene coating |
| CN103906416A (en) * | 2014-04-11 | 2014-07-02 | 江苏悦达新材料科技有限公司 | Method for manufacturing artificial graphite radiating film with catalytic graphitization technology |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1945169A (en) * | 2005-10-08 | 2007-04-11 | 深圳市益酷科技有限公司 | Semiconductor circulation heat pipe refrigerator |
| CN201111626Y (en) * | 2007-05-17 | 2008-09-10 | 黄钟 | Hot pipe heat conduction heat radiator |
| CN103066037A (en) * | 2012-12-02 | 2013-04-24 | 合肥工业大学 | Thermoelectricity refrigeration heat pipe radiator for electric car insulated gate bipolar translator (IGBT) |
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